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Issues
April 1984
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
ISSN 0734-211X
EISSN 2327-9877
A high resolution EELS study of free‐carrier variations in H+2/H+ bombarded (100)GaAs
J. Vac. Sci. Technol. B 2, 101–106 (1984)
https://doi.org/10.1116/1.582926
Screening energy variations in silicon, silicon dioxide, and silicides
J. Vac. Sci. Technol. B 2, 107–112 (1984)
https://doi.org/10.1116/1.582927
Charge control model of inverted GaAs–AlGaAs modulation doped FET’s (IMODFET’s)
J. Vac. Sci. Technol. B 2, 113–116 (1984)
https://doi.org/10.1116/1.582928
Enhanced luminescence from AlGaAs/GaAs single quantum well structures through improved interfaces
J. Vac. Sci. Technol. B 2, 117–122 (1984)
https://doi.org/10.1116/1.582929
Insulated gate depletion mode and accumulation mode field effect transistors on InP fabricated by electron beam lithography
J. Vac. Sci. Technol. B 2, 123–129 (1984)
https://doi.org/10.1116/1.582930
The influence of input power on the performance of rf sputtered ITO/InP solar cells
J. Vac. Sci. Technol. B 2, 140–144 (1984)
https://doi.org/10.1116/1.582933
Reduction of arsenic oxide contamination in molecular beam epitaxy vacuum chambers
J. Vac. Sci. Technol. B 2, 148–150 (1984)
https://doi.org/10.1116/1.582935
Structural and optical properties of GaAs–AlxGa1−xAs quantum wells
J. Vac. Sci. Technol. B 2, 163–166 (1984)
https://doi.org/10.1116/1.582768
Persistent photoconductivity in AlGaAs–GaAs heterostructures
J. Vac. Sci. Technol. B 2, 167–169 (1984)
https://doi.org/10.1116/1.582769
Improvement of the inverted GaAs/AlGaAs heterointerface
R. Fischer; W. T. Masselink; Y. L. Sun; T. J. Drummond; Y. C. Chang; M. V. Klein; H. Morkoç; E. Anderson
J. Vac. Sci. Technol. B 2, 170–174 (1984)
https://doi.org/10.1116/1.582770
Summary Abstract: Electron overflow and interface state effect in MBE‐grown AlGaAs/GaAs MISS‐FET’s
J. Vac. Sci. Technol. B 2, 175 (1984)
https://doi.org/10.1116/1.582771
Summary Abstract: High quality p–n junctions in InGaAs/GaAs strained‐layer superlattices
L. R. Dawson; G. C. Osbourn; T. E. Zipperian; J. J. Wiczer; C. E. Barnes; I. J. Fritz; R. M. Biefeld
J. Vac. Sci. Technol. B 2, 179–180 (1984)
https://doi.org/10.1116/1.582773
Effects of strain and layer thickness on the growth of InxGa1−xAs–GaAs strained‐layer superlattices
J. Vac. Sci. Technol. B 2, 181–185 (1984)
https://doi.org/10.1116/1.582774
Summary Abstract: The influence of growth conditions on sulfur and selenium incorporation in Ga1−xAlxAs grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 2, 186–187 (1984)
https://doi.org/10.1116/1.582775
The use of substrate annealing as a gettering technique prior to molecular beam epitaxial growth
J. Vac. Sci. Technol. B 2, 188–193 (1984)
https://doi.org/10.1116/1.582776
Dependence of electrical characteristics of MBE Ga0.47In0.53As planar doped barriers on InP substrates
J. Vac. Sci. Technol. B 2, 194–196 (1984)
https://doi.org/10.1116/1.582777
The effect of aluminum composition on silicon donor behavior in AlxGa1−xAs
J. Vac. Sci. Technol. B 2, 197–200 (1984)
https://doi.org/10.1116/1.582778
Summary Abstract: Inelastic tunneling characteristics of AlAs/GaAs heterojunction barriers
J. Vac. Sci. Technol. B 2, 201–202 (1984)
https://doi.org/10.1116/1.582779
Summary Abstract: Single crystal SrF2 on GaAs(001)—an electron beam resist and dielectric for insulator/semiconductor structures
J. Vac. Sci. Technol. B 2, 203–204 (1984)
https://doi.org/10.1116/1.582780
Summary Abstract: Epitaxial regrowth of highly doped amorphous silicon films grown by MBE
J. Vac. Sci. Technol. B 2, 205 (1984)
https://doi.org/10.1116/1.582781
Summary Abstract: Molecular beam epitaxial growth of CdTe films on InSb
J. Vac. Sci. Technol. B 2, 211 (1984)
https://doi.org/10.1116/1.582784
Electron densities in InAs–AlSb quantum wells
J. Vac. Sci. Technol. B 2, 214–216 (1984)
https://doi.org/10.1116/1.582786
The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 2, 219–223 (1984)
https://doi.org/10.1116/1.582788
Molecular beam epitaxial growth of CdTe, HgTe, and Hg1−xCdxTe alloys
J. Vac. Sci. Technol. B 2, 224–228 (1984)
https://doi.org/10.1116/1.582789
Influence of growth conditions and alloy composition on deep electron traps of n‐AlxGa1−xAs grown by MBE
J. Vac. Sci. Technol. B 2, 229–232 (1984)
https://doi.org/10.1116/1.582790
Photoemission studies of the band bending on MBE‐grown GaAs(001)
J. Vac. Sci. Technol. B 2, 235–239 (1984)
https://doi.org/10.1116/1.582792
Summary Abstract: The MBE growth of GaAs free of oval defects
J. Vac. Sci. Technol. B 2, 241–242 (1984)
https://doi.org/10.1116/1.582794
Extrinsic effects in reflection high‐energy electron diffraction patterns from MBE GaAs
J. Vac. Sci. Technol. B 2, 243–248 (1984)
https://doi.org/10.1116/1.582795
The effect of infrared flash lamp annealing on the electrical properties of modulation‐doped GaAs/N–AlGaAs structures
J. Vac. Sci. Technol. B 2, 249–251 (1984)
https://doi.org/10.1116/1.582796
Modulation‐doped FET threshold voltage uniformity of a high throughput 3 inch MBE system
J. Vac. Sci. Technol. B 2, 252–255 (1984)
https://doi.org/10.1116/1.582797
Very low threshold current GaAs–AlGaAs GRIN‐SCH lasers grown by MBE for OEIC applications
J. Vac. Sci. Technol. B 2, 259–261 (1984)
https://doi.org/10.1116/1.582799
Modulation‐doped Al0.48In0.52As/Ga0.47In0.53As photodetector prepared by molecular beam epitaxy
J. Vac. Sci. Technol. B 2, 262–264 (1984)
https://doi.org/10.1116/1.582800
Superlattice buffers for GaAs power MESFET’s grown by MBE
J. Vac. Sci. Technol. B 2, 265–268 (1984)
https://doi.org/10.1116/1.582801
Growth of millimeter‐wave distributed GaAs IMPATT structures by molecular beam epitaxy
J. Vac. Sci. Technol. B 2, 269–271 (1984)
https://doi.org/10.1116/1.582802
Molecular beam epitaxial growth of GaAs millimeter‐wave IMPATT diode material
J. Vac. Sci. Technol. B 2, 272–275 (1984)
https://doi.org/10.1116/1.582803
Role of arsenic (As2, As) in controlling the quality of GaAs grown by MBE: Theoretical studies
J. Vac. Sci. Technol. B 2, 276–279 (1984)
https://doi.org/10.1116/1.582804
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning
Yasser Pordeli, Céline Steenge, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.