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Volume 2, Issue 1
January 1984
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena Cover Image for Volume 2, Issue 1
All Issues
ISSN 0734-211X
EISSN 2327-9877
Tunability of bipolar conductivity in GaAs doping superlattices
H. Künzel; A. Fischer; K. Ploog
J. Vac. Sci. Technol. B 2, 1–9 (1984) https://doi.org/10.1116/1.582907
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Electronic transport properties of TiSi2 thin films
V. Malhotra; T. L. Martin; J. E. Mahan
J. Vac. Sci. Technol. B 2, 10–15 (1984) https://doi.org/10.1116/1.582905
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Hydrogenic impurity states in a quantum well wire
Johnson Lee; Harold N. Spector
J. Vac. Sci. Technol. B 2, 16–20 (1984) https://doi.org/10.1116/1.582906
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Atom‐probe study of silicide formation at Ni/Si interfaces
Osamu Nishikawa; Mezame Shibata; Toshihiko Yoshimura; Eiichi Nomura
J. Vac. Sci. Technol. B 2, 21–23 (1984) https://doi.org/10.1116/1.582908
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Lattice‐matched single‐crystalline dielectric films (BaxSr1−xF2) on InP(001) grown by molecular‐beam epitaxy
C. W. Tu; T. T. Sheng; A. T. Macrander; J. M. Phillips; H. J. Guggenheim
J. Vac. Sci. Technol. B 2, 24–26 (1984) https://doi.org/10.1116/1.582909
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CF4/silicon surface reactions: Evidence for parallel etching mechanisms from modulated ion beam studies
S. C. McNevin; G. E. Becker
J. Vac. Sci. Technol. B 2, 27–33 (1984) https://doi.org/10.1116/1.582910
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Oxygen ion beam etching for pattern transfer
H. Gokan; M. Itoh; S. Esho
J. Vac. Sci. Technol. B 2, 34–37 (1984) https://doi.org/10.1116/1.582911
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Reactive ion beam etching: Dissociation of molecular ions upon impact
Ch. Steinbrüchel
J. Vac. Sci. Technol. B 2, 38–44 (1984) https://doi.org/10.1116/1.582912
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Direct transfer of resist grating patterns onto InP by reactive‐ion etching using CCl4/O2
Kazuo Hirata; Osamu Mikami; Tadashi Saitoh
J. Vac. Sci. Technol. B 2, 45–48 (1984) https://doi.org/10.1116/1.582913
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Silicon nitride film deposition by hot‐wall plasma‐enhanced CVD for GaAs LSI
Yasunobu Ishii; Tatsuo Aoki; Shintaro Miyazawa
J. Vac. Sci. Technol. B 2, 49–53 (1984) https://doi.org/10.1116/1.582914
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Contact resistance monitor for silicon integrated circuits
T. J. Faith; R. S. Irven; L. H. Reed; J. J. O’Neill, Jr.; M. C. Jones; B. B. Levin
J. Vac. Sci. Technol. B 2, 54–57 (1984) https://doi.org/10.1116/1.582915
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Dose control with high power ion beams on photoresist masked targets
K. Steeples
J. Vac. Sci. Technol. B 2, 58–62 (1984) https://doi.org/10.1116/1.582916
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Submicron pattern replication using a high contrast mask and two‐layer resist in x‐ray lithography
Yasunao Saitoh; Hideo Yoshihara; Iwao Watanabe; Satoshi Nakayama
J. Vac. Sci. Technol. B 2, 63–67 (1984) https://doi.org/10.1116/1.582917
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High contrast x‐ray mask preparation
Toshiro Ono; Akira Ozawa
J. Vac. Sci. Technol. B 2, 68–72 (1984) https://doi.org/10.1116/1.582918
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Promising cathode materials for high brightness electron beams
Shigeaki Zaima; Hiroshi Adachi; Yukio Shibata
J. Vac. Sci. Technol. B 2, 73–78 (1984) https://doi.org/10.1116/1.582919
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The common anion rule: An electrochemical contribution
Jacques Gautron; Jean‐Lou Sculfort
J. Vac. Sci. Technol. B 2, 79–81 (1984) https://doi.org/10.1116/1.582920
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A method for eliminating hillocks in integrated‐circuit metallizations
K. C. Cadien; D. L. Losee
J. Vac. Sci. Technol. B 2, 82–83 (1984) https://doi.org/10.1116/1.582921
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Sputtering of silicon nitride with hydrogen ions
P. C. Zalm; L. J. Beckers
J. Vac. Sci. Technol. B 2, 84–85 (1984) https://doi.org/10.1116/1.582922
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Reactive ion etching of GaAs in a chlorine plasma
E. L. Hu; R. E. Howard
J. Vac. Sci. Technol. B 2, 85–88 (1984) https://doi.org/10.1116/1.582923
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Erratum: Focused ion beam microlithography using an etch‐stop process in gallium‐doped silicon [J. Vac. Sci. Technol. B 1, 1056 (1983)]
P. H. La Marche; R. Levi‐Setti; Y. L. Wang
J. Vac. Sci. Technol. B 2, 89 (1984) https://doi.org/10.1116/1.582924
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Book Review: Laser annealing of semiconductors
David Biegelsen
J. Vac. Sci. Technol. B 2, 90 (1984) https://doi.org/10.1116/1.582925
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