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Investigation of molecular beam epitaxial ${NdF}_{3} /Si(111)$ heterostructures by atomic force microscopy and x-ray diffractometry

J. M. Ko; S. D. Durbin; T. Fukuda; K. Inaba

J. Vac. Sci. Technol. B 19, 2007–2012 (2001) https://doi.org/10.1116/1.1409388

View articletitled, Investigation of molecular beam epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NdF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si(111)</mi></math> heterostructures by atomic force microscopy and x-ray diffractometry

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Polymer pattern formation on ${SiO}_{2}$ surfaces using surface monolayer initiated polymerization

Xiaohua Chen; Laren M. Tolbert; Clifford L. Henderson; Dennis W. Hess; Jurgen Ruhe

J. Vac. Sci. Technol. B 19, 2013–2019 (2001) https://doi.org/10.1116/1.1409391

Abstract

View articletitled, Polymer pattern formation on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> surfaces using surface monolayer initiated polymerization

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Deep plasma etching of piezoelectric PZT with ${SF}_{6}$

M. Bale; R. E. Palmer

J. Vac. Sci. Technol. B 19, 2020–2025 (2001) https://doi.org/10.1116/1.1409392

Abstract

View articletitled, Deep plasma etching of piezoelectric PZT with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SF</mi><mrow><mn>6</mn></mrow></msub></math>

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Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies

Anne Lauwers; An Steegen; Muriel de Potter; Richard Lindsay; Alessandra Satta; Hugo Bender; K. Maex

J. Vac. Sci. Technol. B 19, 2026–2037 (2001) https://doi.org/10.1116/1.1409389

Abstract

View articletitled, Materials aspects, electrical performance, and scalability of Ni silicide towards sub-0.13 μm technologies

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Reduced brightness of the ZrO/W Schottky electron emitter

A. H. V. van Veen; C. W. Hagen; J. E. Barth; P. Kruit

J. Vac. Sci. Technol. B 19, 2038–2044 (2001) https://doi.org/10.1116/1.1409390

Abstract

View articletitled, Reduced brightness of the ZrO/W Schottky electron emitter

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Experimental conditions for a highly ordered monolayer of gold nanoparticles fabricated by the Langmuir–Blodgett method

Shujuan Huang; Gen Tsutsui; Hiroyuki Sakaue; Shoso Shingubara; Takayuki Takahagi

J. Vac. Sci. Technol. B 19, 2045–2049 (2001) https://doi.org/10.1116/1.1410943

Abstract

View articletitled, Experimental conditions for a highly ordered monolayer of gold nanoparticles fabricated by the Langmuir–Blodgett method

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Modification of polycarbonate and polypropylene surfaces by argon ion cluster beams

H. Biederman; D. Slavinska; H. Boldyreva; H. Lehmberg; G. Takaoka; J. Matsuo; H. Kinpara; J. Zemek

J. Vac. Sci. Technol. B 19, 2050–2056 (2001) https://doi.org/10.1116/1.1410944

Abstract

View articletitled, Modification of polycarbonate and polypropylene surfaces by argon ion cluster beams

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Valence band alignment and work function of heteroepitaxial nanocrystals on GaAs(001)

S. Heun; Y. Watanabe; B. Ressel; Th. Schmidt; K. C. Prince

J. Vac. Sci. Technol. B 19, 2057–2062 (2001) https://doi.org/10.1116/1.1410942

Abstract

View articletitled, Valence band alignment and work function of heteroepitaxial nanocrystals on GaAs(001)

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Chemical composition, morphology, and deep level electronic states of GaN (0001) (1×1) surfaces prepared by indium decapping

A. P. Young; L. J. Brillson; Y. Naoi; C. W. Tu

J. Vac. Sci. Technol. B 19, 2063–2066 (2001) https://doi.org/10.1116/1.1412656

Abstract

View articletitled, Chemical composition, morphology, and deep level electronic states of GaN (0001) (1×1) surfaces prepared by indium decapping

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Improvement of the ${SiO}_{2} / Si$ interface characteristics by two-step deposition with intermediate plasma treatment using $O_{2} / He$ gas

Chung Yi; Hyo Uk Kim; Shi Woo Rhee; Sang Ho Oh; Chan-Gyung Park

J. Vac. Sci. Technol. B 19, 2067–2072 (2001) https://doi.org/10.1116/1.1412657

Abstract

View articletitled, Improvement of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> interface characteristics by two-step deposition with intermediate plasma treatment using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">He</mi></math> gas

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In situ submicron patterning with silicon nitride evaporation masks

U. Purbach; A. de Lozanne

J. Vac. Sci. Technol. B 19, 2073–2076 (2001) https://doi.org/10.1116/1.1412658

Abstract

View articletitled, In situ submicron patterning with silicon nitride evaporation masks

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Parameter extraction for 193 nm chemically amplified resist from refractive index change

Young-Soo Sohn; Hye-Keun Oh; Ilsin An

J. Vac. Sci. Technol. B 19, 2077–2081 (2001) https://doi.org/10.1116/1.1414016

Abstract

View articletitled, Parameter extraction for 193 nm chemically amplified resist from refractive index change

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Characterization of reactive ion etch lag scaling

D. Keil; E. Anderson

J. Vac. Sci. Technol. B 19, 2082–2088 (2001) https://doi.org/10.1116/1.1414116

Abstract

View articletitled, Characterization of reactive ion etch lag scaling

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Initial surface reactions between ${Cl}_{2}$ molecules and the GaAs (001) $2×4$ surface

Yu Tanaka; Masashi Ozeki

J. Vac. Sci. Technol. B 19, 2089–2094 (2001) https://doi.org/10.1116/1.1414118

Abstract

View articletitled, Initial surface reactions between <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mn>2</mn></mrow></msub></math> molecules and the GaAs (001) <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">2×4</mtext></math> surface

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Study of the surface reactivity of optical fibers under aging conditions by flexural resonance

Johann Mertens; Eric Finot; Eric Bourillot; Arnaud Fabre; Jean Pierre Goudonnet

J. Vac. Sci. Technol. B 19, 2095–2103 (2001) https://doi.org/10.1116/1.1414113

Abstract

View articletitled, Study of the surface reactivity of optical fibers under aging conditions by flexural resonance

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Global pattern density effects on aluminum alloy etching for sub-0.25 μm technology logic devices

Kye Hyun Baek; Kil Ho Kim; Chung Ho Hwang; Dae Hoon Lee

J. Vac. Sci. Technol. B 19, 2104–2107 (2001) https://doi.org/10.1116/1.1414114

Abstract

View articletitled, Global pattern density effects on aluminum alloy etching for sub-0.25 μm technology logic devices

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Investigation of fluorine in dry ultrathin silicon oxides

G. Vereecke; E. Röhr; R. J. Carter; T. Conard; H. De Witte; M. M. Heyns

J. Vac. Sci. Technol. B 19, 2108–2113 (2001) https://doi.org/10.1116/1.1414050

Abstract

View articletitled, Investigation of fluorine in dry ultrathin silicon oxides

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Investigation of the bonding strength and interface current of $p- Si /n- GaAs$ wafers bonded by surface activated bonding at room temperature

M. M. R. Howlader; T. Watanabe; T. Suga

J. Vac. Sci. Technol. B 19, 2114–2118 (2001) https://doi.org/10.1116/1.1414115

Abstract

View articletitled, Investigation of the bonding strength and interface current of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-</mi><mi mathvariant="normal" xmlns="">Si</mi><mi xmlns="">/n-</mi><mi mathvariant="normal" xmlns="">GaAs</mi></math> wafers bonded by surface activated bonding at room temperature

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Metamorphic ${In}_{0.52} {Al}_{0.48} {As/In}_{0.53} {Ga}_{0.47} As$ high electron mobility transistors on GaAs with ${In}_{x} {Ga}_{1−x} P$ graded buffer

K. Yuan; K. Radhakrishnan; H. Q. Zheng; G. I. Ng

J. Vac. Sci. Technol. B 19, 2119–2122 (2001) https://doi.org/10.1116/1.1415516

Abstract

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In situ measurement of aspect ratio dependent etch rates of polysilicon in an inductively coupled fluorine plasma

Th. Lill; M. Grimbergen; D. Mui

J. Vac. Sci. Technol. B 19, 2123–2128 (2001) https://doi.org/10.1116/1.1415514

Abstract

View articletitled, In situ measurement of aspect ratio dependent etch rates of polysilicon in an inductively coupled fluorine plasma

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Ion-assisted etching of W film by an ${Ar}^{+}$ beam in ${XeF}_{2}$ with the addition of $H_{2},$ $N_{2},$ or $O_{2}$

Hideo Ichinose

J. Vac. Sci. Technol. B 19, 2129–2132 (2001) https://doi.org/10.1116/1.1415518

Abstract

View articletitled, Ion-assisted etching of W film by an <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ar</mi><mrow><mi>+</mi></mrow></msup></math> beam in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">XeF</mi><mrow><mn>2</mn></mrow></msub></math> with the addition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">,</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">,</mi></math> or <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub></math>

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Etching technique for ruthenium with a high etch rate and high selectivity using ozone gas

M. Nakahara; S. Tsunekawa; K. Watanabe; T. Arai; T. Yunogami; K. Kuroki

J. Vac. Sci. Technol. B 19, 2133–2136 (2001) https://doi.org/10.1116/1.1415517

Abstract

View articletitled, Etching technique for ruthenium with a high etch rate and high selectivity using ozone gas

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Ultrathin zirconium oxide films as alternative gate dielectrics

J. P. Chang; Y-S. Lin; S. Berger; A. Kepten; R. Bloom; S. Levy

J. Vac. Sci. Technol. B 19, 2137–2143 (2001) https://doi.org/10.1116/1.1415513

Abstract

View articletitled, Ultrathin zirconium oxide films as alternative gate dielectrics

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Ion-implanted photoresist removal using water/carbon dioxide mixtures at elevated temperature and pressure

K. L. Chavez; G. L. Bakker; D. W. Hess

J. Vac. Sci. Technol. B 19, 2144–2148 (2001) https://doi.org/10.1116/1.1415519

Abstract

View articletitled, Ion-implanted photoresist removal using water/carbon dioxide mixtures at elevated temperature and pressure

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Interplay of current crowding and current self-quenching effects in planar cold cathodes

Y. Modukuru; M. Cahay

J. Vac. Sci. Technol. B 19, 2149–2154 (2001) https://doi.org/10.1116/1.1415515

Abstract

View articletitled, Interplay of current crowding and current self-quenching effects in planar cold cathodes

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Processing and characterization of ultralow-dielectric constant organosilicate

Shu Yang; Janice C.-H. Pai; Chien-Shing Pai; Gary Dabbagh; Omkaram Nalamasu; Elsa Reichmanis; Joko Seputro; Yaw S. Obeng

J. Vac. Sci. Technol. B 19, 2155–2161 (2001) https://doi.org/10.1116/1.1417542

Abstract

View articletitled, Processing and characterization of ultralow-dielectric constant organosilicate

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Patterning nonflat substrates with a low pressure, room temperature, imprint lithography process

Matthew Colburn; Annette Grot; Byung Jin Choi; Marie Amistoso; Todd Bailey; S. V. Sreenivasan; John G. Ekerdt; C. Grant Willson

J. Vac. Sci. Technol. B 19, 2162–2172 (2001) https://doi.org/10.1116/1.1417543

Abstract

View articletitled, Patterning nonflat substrates with a low pressure, room temperature, imprint lithography process

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Deep reactive ion etching of silicon carbide

S. Tanaka; K. Rajanna; T. Abe; M. Esashi

J. Vac. Sci. Technol. B 19, 2173–2176 (2001) https://doi.org/10.1116/1.1418401

Abstract

View articletitled, Deep reactive ion etching of silicon carbide

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Optical and structural studies in InGaN quantum well structure laser diodes

Shigefusa F. Chichibu; Takashi Azuhata; Mutsumi Sugiyama; Toshio Kitamura; Yuuki Ishida; Hajime Okumura; Hisayuki Nakanishi; Takayuki Sota; Takashi Mukai

J. Vac. Sci. Technol. B 19, 2177–2183 (2001) https://doi.org/10.1116/1.1418404

Abstract

View articletitled, Optical and structural studies in InGaN quantum well structure laser diodes

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Organic polymeric coatings deposited by plasma enhanced chemical vapor deposition

Ram W. Sabnis; Mario Cazeca; William L. DiMenna; Mary J. Spencer; Douglas J. Guerrero; Min-Shyan Sheu

J. Vac. Sci. Technol. B 19, 2184–2189 (2001) https://doi.org/10.1116/1.1418402

Abstract

View articletitled, Organic polymeric coatings deposited by plasma enhanced chemical vapor deposition

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Electromigration performance of AlCu/Ti and AlCu/Ti/TiN/Ti metallization

Kazuyoshi Kamoshida

J. Vac. Sci. Technol. B 19, 2190–2194 (2001) https://doi.org/10.1116/1.1418400

Abstract

View articletitled, Electromigration performance of AlCu/Ti and AlCu/Ti/TiN/Ti metallization

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Focus latitude enhancement of symmetrical phase mask design for deep submicron contact hole patterning

Shuo-Yen Chou; Jen-Chung Lou; Li-Jui Chen; Lin-Hung Shiu; Ru-Gun Liu; Chien-Ming Wang; Tsai-Sheng Gau

J. Vac. Sci. Technol. B 19, 2195–2205 (2001) https://doi.org/10.1116/1.1418398

Abstract

View articletitled, Focus latitude enhancement of symmetrical phase mask design for deep submicron contact hole patterning

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Optical, electrical, and structural characteristics of yttrium oxide films deposited on plasma etched silicon substrates

J. J. Araiza; M. A. Aguilar-Frutis; C. Falcony

J. Vac. Sci. Technol. B 19, 2206–2211 (2001) https://doi.org/10.1116/1.1418399

Abstract

View articletitled, Optical, electrical, and structural characteristics of yttrium oxide films deposited on plasma etched silicon substrates

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Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics

Seiichi Miyazaki

J. Vac. Sci. Technol. B 19, 2212–2216 (2001) https://doi.org/10.1116/1.1418405

Abstract

View articletitled, Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics

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Photoluminescence characterization of Si-based nanostructured films produced by pulsed laser ablation

A. V. Kabashin; M. Meunier; R. Leonelli

J. Vac. Sci. Technol. B 19, 2217–2222 (2001) https://doi.org/10.1116/1.1420494

Abstract

View articletitled, Photoluminescence characterization of Si-based nanostructured films produced by pulsed laser ablation

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Etch mechanisms of low dielectric constant polymers in high density plasmas: Impact of charging effects on profile distortion during the etching process

D. Fuard; O. Joubert; L. Vallier; M. Assous; P. Berruyer; R. Blanc

J. Vac. Sci. Technol. B 19, 2223–2230 (2001) https://doi.org/10.1116/1.1420492

Abstract

View articletitled, Etch mechanisms of low dielectric constant polymers in high density plasmas: Impact of charging effects on profile distortion during the etching process

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Etching characteristics and plasma-induced damage of high-k ${Ba}_{0.5} {Sr}_{0.5} {TiO}_{3}$ thin-film capacitors

D. S. Wuu; C. C. Lin; R. H. Horng; F. C. Liao; Y. H. Liu

J. Vac. Sci. Technol. B 19, 2231–2236 (2001) https://doi.org/10.1116/1.1420205

Abstract

View articletitled, Etching characteristics and plasma-induced damage of high-k <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>3</mn></mrow></msub></math> thin-film capacitors

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Structural and optical properties of ternary Cs–Pb–Cl nanoaggregates in thin films

F. Somma; P. Aloe; S. Lo Mastro; S. Santucci; C. Giampaolo; M. Nikl; K. Nitsch; P. Fabeni; G. P. Pazzi

J. Vac. Sci. Technol. B 19, 2237–2239 (2001) https://doi.org/10.1116/1.1421542

Abstract

View articletitled, Structural and optical properties of ternary Cs–Pb–Cl nanoaggregates in thin films

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Scaling considerations for high performance 25 nm metal–oxide–semiconductor field effect transistors

Samar Saha

J. Vac. Sci. Technol. B 19, 2240–2246 (2001) https://doi.org/10.1116/1.1420207

Abstract

View articletitled, Scaling considerations for high performance 25 nm metal–oxide–semiconductor field effect transistors

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Characteristic features of new electron-multiplying channels in a field emission display

Whikun Yi; Taewon Jeong; Sunghwan Jin; SeGi Yu; Jeonghee Lee; Jungna Heo; Jibeom Yoo; J. M. Kim

J. Vac. Sci. Technol. B 19, 2247–2251 (2001) https://doi.org/10.1116/1.1420206

Abstract

View articletitled, Characteristic features of new electron-multiplying channels in a field emission display

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X-ray photoemission spectroscopy study of silicidation of Ti on ${BF}_{2}^{+}$ -implanted polysilicon

H. N. Chua; K. L. Pey; W. H. Lai; J. W. Chai; J. S. Pan; D. H. C. Chua; S. Y. Siah

J. Vac. Sci. Technol. B 19, 2252–2257 (2001) https://doi.org/10.1116/1.1421565

Abstract

View articletitled, X-ray photoemission spectroscopy study of silicidation of Ti on <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">BF</mi><mrow><mn>2</mn></mrow><mrow><mi>+</mi></mrow></msubsup></math>-implanted polysilicon

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Scanning probe microscopy of domains and domain walls in sol–gel ${PbTiO}_{3}$ thin films

Xiaofeng Chen; Weiguang Zhu; Weiguo Liu; Zhihong Wang

J. Vac. Sci. Technol. B 19, 2258–2261 (2001) https://doi.org/10.1116/1.1421569

Abstract

View articletitled, Scanning probe microscopy of domains and domain walls in sol–gel <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mn>3</mn></mrow></msub></math> thin films

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Automated Xe adsorption technique to measure small Brunauer–Emmett–Teller surface area of several square centimeters

Hiroshi Yanazawa; Ryoichi Furukawa; Satoshi Yamamoto; Isao Suzuki; Kazuhisa Miura

J. Vac. Sci. Technol. B 19, 2262–2267 (2001) https://doi.org/10.1116/1.1421564

Abstract

View articletitled, Automated Xe adsorption technique to measure small Brunauer–Emmett–Teller surface area of several square centimeters

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Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

M. T. Currie; C. W. Leitz; T. A. Langdo; G. Taraschi; E. A. Fitzgerald; D. A. Antoniadis

J. Vac. Sci. Technol. B 19, 2268–2279 (2001) https://doi.org/10.1116/1.1421554

Abstract

View articletitled, Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates

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Growth and characterization of Fe(100)/InAs(100) hybrid structures

Hiroshi Ohno; Kanji Yoh; Toshihiro Doi; Agus Subagyo; Kazuhisa Sueoka; Koichi Mukasa

J. Vac. Sci. Technol. B 19, 2280–2283 (2001) https://doi.org/10.1116/1.1421563

Abstract

View articletitled, Growth and characterization of Fe(100)/InAs(100) hybrid structures

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Structure analysis of ${Ba}_{2} {In}_{2} O_{5}$ and related compounds by electron microscopy

M. Mitome; M. Okamoto; Y. Bando; H. Yamamura

J. Vac. Sci. Technol. B 19, 2284–2288 (2001) https://doi.org/10.1116/1.1421566

Abstract

View articletitled, Structure analysis of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub></math> and related compounds by electron microscopy

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Characteristics of sputtered ${Ti}_{1−x} {Al}_{x} N$ films for storage node electrode barriers

Dae-Gyu Park; Tae-Ho Cha; Sang-Hyeob Lee; In-Seok Yeo; Jin Won Park; Sam-Dong Kim

J. Vac. Sci. Technol. B 19, 2289–2294 (2001) https://doi.org/10.1116/1.1421567

Abstract

View articletitled, Characteristics of sputtered <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> films for storage node electrode barriers

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Three-dimensional carrier concentration profiles and ionization energy plots for low-temperature GaAs

N. C. Halder; V. Krishnan; Bradley Baker

J. Vac. Sci. Technol. B 19, 2295–2298 (2001) https://doi.org/10.1116/1.1421568

Abstract

View articletitled, Three-dimensional carrier concentration profiles and ionization energy plots for low-temperature GaAs

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BRIEF REPORTS AND COMMENTS

Nanostructure patterns written in polycarbonate by a bent optical fiber probe

Sy-Hann Chen; Yung-Fu Chen

J. Vac. Sci. Technol. B 19, 2299–2300 (2001) https://doi.org/10.1116/1.1421555

Abstract

View articletitled, Nanostructure patterns written in polycarbonate by a bent optical fiber probe

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RAPID COMMUNICATIONS

Electron-beam CARL resist development for 70 nm direct write

O. Kirch; K. Elian; G. Falk

J. Vac. Sci. Technol. B 19, 2301–2303 (2001) https://doi.org/10.1116/1.1418403

Abstract

View articletitled, Electron-beam CARL resist development for 70 nm direct write

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Reduction in surface roughness during secondary ion mass spectrometry depth profiling with an ion-milling method

Z. X. Jiang; S. Backer; S. Chen; J. Lerma; T. Guenther; J. J. Lee; D. Sieloff

J. Vac. Sci. Technol. B 19, 2304–2306 (2001) https://doi.org/10.1116/1.1421553

Abstract

View articletitled, Reduction in surface roughness during secondary ion mass spectrometry depth profiling with an ion-milling method

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PAPERS FROM THE 45TH INTERNATIONAL CONFERENCE ON ELECTRON, ION, AND PHOTON BEAM TECHNOLOGY AND NANOFABRICATION

PLENARY SESSION

From nanometers to gigaparsecs: The role of nanostructures in unraveling the mysteries of the cosmos

Mark L. Schattenburg

J. Vac. Sci. Technol. B 19, 2319–2328 (2001) https://doi.org/10.1116/1.1418410

Abstract

View articletitled, From nanometers to gigaparsecs: The role of nanostructures in unraveling the mysteries of the cosmos

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OPTICAL LITHOGRAPHY

$Low {-k}_{1}$ optical lithography for 100 nm logic technology and beyond

Anthony Yen; Shinn-Sheng Yu; Jeng-Horng Chen; Chun-Kuang Chen; Tsai-Sheng Gau; Burn Jeng Lin

J. Vac. Sci. Technol. B 19, 2329–2334 (2001) https://doi.org/10.1116/1.1412894

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Low</mi><msub xmlns=""><mi>-k</mi><mrow><mn>1</mn></mrow></msub></math> optical lithography for 100 nm logic technology and beyond

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Image metrology and system controls for scanning beam interference lithography

Carl G. Chen; Paul T. Konkola; Ralf K. Heilmann; G. S. Pati; Mark L. Schattenburg

J. Vac. Sci. Technol. B 19, 2335–2341 (2001) https://doi.org/10.1116/1.1409379

Abstract

View articletitled, Image metrology and system controls for scanning beam interference lithography

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Digital heterodyne interference fringe control system

Ralf K. Heilmann; Paul T. Konkola; Carl G. Chen; G. S. Pati; Mark L. Schattenburg

J. Vac. Sci. Technol. B 19, 2342–2346 (2001) https://doi.org/10.1116/1.1410096

Abstract

View articletitled, Digital heterodyne interference fringe control system

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Method for reducing hyperbolic phase in interference lithography

Michael E. Walsh; Henry I. Smith

J. Vac. Sci. Technol. B 19, 2347–2352 (2001) https://doi.org/10.1116/1.1421558

Abstract

View articletitled, Method for reducing hyperbolic phase in interference lithography

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Immersion lithography at 157 nm

M. Switkes; M. Rothschild

J. Vac. Sci. Technol. B 19, 2353–2356 (2001) https://doi.org/10.1116/1.1412895

Abstract

View articletitled, Immersion lithography at 157 nm

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Feasibility of utilizing hexamethyldisiloxane film as a bottom antireflective coating for 157 nm lithography

C. H. Lin; L. A. Wang

J. Vac. Sci. Technol. B 19, 2357–2361 (2001) https://doi.org/10.1116/1.1417549

Abstract

View articletitled, Feasibility of utilizing hexamethyldisiloxane film as a bottom antireflective coating for 157 nm lithography

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Demonstration of two-photon lithography

Ch. J. Schwarz; A. V. V. Nampoothiri; J. C. Jasapara; W. Rudolph; S. R. J. Brueck

J. Vac. Sci. Technol. B 19, 2362–2365 (2001) https://doi.org/10.1116/1.1418409

Abstract

View articletitled, Demonstration of two-photon lithography

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Gratings of regular arrays and trim exposures for ultralarge scale integrated circuit phase-shift lithography

M. Fritze; B. Tyrrell; D. Astolfi; D. Yost; P. Davis; B. Wheeler; R. Mallen; J. Jarmolowicz; S. Cann; D. Chan; P. Rhyins; C. Carney; J. Ferri; B. A. Blachowicz

J. Vac. Sci. Technol. B 19, 2366–2370 (2001) https://doi.org/10.1116/1.1408950

Abstract

View articletitled, Gratings of regular arrays and trim exposures for ultralarge scale integrated circuit phase-shift lithography

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Optimization method of the double exposure technique with alt-PSMs for below a 0.13 μm node

Koji Kikuchi; Hidetoshi Ohnuma; Hiroichi Kawahira

J. Vac. Sci. Technol. B 19, 2371–2380 (2001) https://doi.org/10.1116/1.1421547

Abstract

View articletitled, Optimization method of the double exposure technique with alt-PSMs for below a 0.13 μm node

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Low-dielectric constant bisbenzo(cyclobutene) and fluorinated poly(arylene)ether films as bottom anti-reflective coating layers for ArF lithography

H. L. Chen; T. C. Chu; M. Y. Li; F. H. Ko; H. C. Cheng; T. Y. Huang

J. Vac. Sci. Technol. B 19, 2381–2384 (2001) https://doi.org/10.1116/1.1421552

Abstract

View articletitled, Low-dielectric constant bisbenzo(cyclobutene) and fluorinated poly(arylene)ether films as bottom anti-reflective coating layers for ArF lithography

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Spun-on carbon antireflective layer with etch resistance for deep and vacuum ultraviolet lithography processes

Yasuhiko Sato; Yasunobu Onishi; Yoshihiko Nakano; Shuzi Hayase

J. Vac. Sci. Technol. B 19, 2385–2388 (2001) https://doi.org/10.1116/1.1412900

Abstract

View articletitled, Spun-on carbon antireflective layer with etch resistance for deep and vacuum ultraviolet lithography processes

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EUV LITHOGRAPHY

First lithographic results from the extreme ultraviolet Engineering Test Stand

J. Vac. Sci. Technol. B 19, 2389–2395 (2001) https://doi.org/10.1116/1.1414017

Abstract

View articletitled, First lithographic results from the extreme ultraviolet Engineering Test Stand

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At-wavelength characterization of the extreme ultraviolet Engineering Test Stand Set-2 optic

Patrick Naulleau; Kenneth A. Goldberg; Erik H. Anderson; Phillip Batson; Paul E. Denham; Keith H. Jackson; Eric M. Gullikson; Senajith Rekawa; Jeffrey Bokor

J. Vac. Sci. Technol. B 19, 2396–2400 (2001) https://doi.org/10.1116/1.1421545

Abstract

View articletitled, At-wavelength characterization of the extreme ultraviolet Engineering Test Stand Set-2 optic

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High sensitivity actinic detection of native defects on extreme ultraviolet lithography mask blanks

Moonsuk Yi; Tsuneyuki Haga; Chris Walton; Jeffrey Bokor

J. Vac. Sci. Technol. B 19, 2401–2405 (2001) https://doi.org/10.1116/1.1410088

Abstract

View articletitled, High sensitivity actinic detection of native defects on extreme ultraviolet lithography mask blanks

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Observation of speckle patterns in extreme ultraviolet imaging

H. H. Solak; Y. Yang; F. Cerrina

J. Vac. Sci. Technol. B 19, 2406–2411 (2001) https://doi.org/10.1116/1.1421550

Abstract

View articletitled, Observation of speckle patterns in extreme ultraviolet imaging

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Fabrication of parallel-plate nanomirror arrays for extreme ultraviolet maskless lithography

Yashesh Shroff; Yijian Chen; William Oldham

J. Vac. Sci. Technol. B 19, 2412–2415 (2001) https://doi.org/10.1116/1.1417544

Abstract

View articletitled, Fabrication of parallel-plate nanomirror arrays for extreme ultraviolet maskless lithography

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X-RAY LITHOGRAPHY

Recent progress in $1× x-ray$ mask technology: Feasibility study using ASET-NIST format TaXN x-ray masks with 100 nm rule 4 Gbit dynamic random access memory test patterns

Shinji Tsuboi; Yuusuke Tanaka; Toshiyuki Iwamoto; Hiroaki Sumitani; Yoshinori Nakayama

J. Vac. Sci. Technol. B 19, 2416–2422 (2001) https://doi.org/10.1116/1.1408952

Abstract

View articletitled, Recent progress in <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1×</mtext><mi mathvariant="normal" xmlns="">x-ray</mi></math> mask technology: Feasibility study using ASET-NIST format TaXN x-ray masks with 100 nm rule 4 Gbit dynamic random access memory test patterns

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Can proximity x-ray lithography print 35 nm features? Yes

Mumit Khan; Geng Han; Gene Tsvid; Toyoki Kitayama; Juan Maldonado; Franco Cerrina

J. Vac. Sci. Technol. B 19, 2423–2427 (2001) https://doi.org/10.1116/1.1418407

Abstract

View articletitled, Can proximity x-ray lithography print 35 nm features? Yes

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Technique for 25 nm x-ray nanolithography

Eijiro Toyota; Toshitada Hori; Mumit Khan; Franco Cerrina

J. Vac. Sci. Technol. B 19, 2428–2433 (2001) https://doi.org/10.1116/1.1415503

Abstract

View articletitled, Technique for 25 nm x-ray nanolithography

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Focusing x-ray masks for printing very narrow features

M. Feldman; M. Khan; F. Cerrina

J. Vac. Sci. Technol. B 19, 2434–2438 (2001) https://doi.org/10.1116/1.1410093

Abstract

View articletitled, Focusing x-ray masks for printing very narrow features

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Effect of secondary electron from the substrate in x-ray lithography using harder radiation spectra

K. Itoga; K. Marumoto; T. Kitayama; H. Sumitani; M. Amemiya; Y. Watanabe

J. Vac. Sci. Technol. B 19, 2439–2443 (2001) https://doi.org/10.1116/1.1420534

Abstract

View articletitled, Effect of secondary electron from the substrate in x-ray lithography using harder radiation spectra

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Compact synchrotron radiation lithography system for 70 nm device manufacturing

Tsutomu Miyatake; Xuan Li; Sayumi Hirose; Toshio Monzen; Kiyoshi Fujii; Katsumi Suzuki

J. Vac. Sci. Technol. B 19, 2444–2447 (2001) https://doi.org/10.1116/1.1409382

Abstract

View articletitled, Compact synchrotron radiation lithography system for 70 nm device manufacturing

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Evaluation of new x-ray stepper, the XRA

Hiroaki Sumitani; Muneyoshi Suita; Soichiro Mitsui; Hajime Aoyama; Kiyoshi Fujii; Hiroshi Watanabe; Takao Taguchi; Yasuji Matsui

J. Vac. Sci. Technol. B 19, 2448–2454 (2001) https://doi.org/10.1116/1.1410091

Abstract

View articletitled, Evaluation of new x-ray stepper, the XRA

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ELECTRON BEAM LITHOGRAPHY

High-throughput electron-beam lithography with a raster-scanned, variably shaped beam

L. H. Veneklasen; H. M. Kao; S. A. Rishton; S. Winter; V. Boegli; T. Newman; G. Bertuccelli; G. Howard; P. Le; Z. Tan; R. Lozes

J. Vac. Sci. Technol. B 19, 2455–2458 (2001) https://doi.org/10.1116/1.1414117

Abstract

View articletitled, High-throughput electron-beam lithography with a raster-scanned, variably shaped beam

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PREVAIL-EPL alpha tool: Early results

J. Vac. Sci. Technol. B 19, 2459–2467 (2001) https://doi.org/10.1116/1.1415501

Abstract

View articletitled, PREVAIL-EPL alpha tool: Early results

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Direct measurement of Coulomb effects in electron beam projection lithography

Takehisa Yahiro; Shohei Suzuki; Takeshi Irita; Noriyuki Hirayanagi; Hiroyasu Shimizu; Shinichi Kojima; Kenji Morita; Shintaro Kawata; Teruaki Okino; Kazuaki Suzuki

J. Vac. Sci. Technol. B 19, 2468–2473 (2001) https://doi.org/10.1116/1.1410089

Abstract

View articletitled, Direct measurement of Coulomb effects in electron beam projection lithography

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Experimental study of electron beam projection lithography mask defect printability

Yoshinori Kojima; Norihiro Katakura; Yoichi Tomo; Hiroshi Takenaka; Akira Yoshida; Isao Shimizu; Masaki Yamabe

J. Vac. Sci. Technol. B 19, 2474–2477 (2001) https://doi.org/10.1116/1.1412896

Abstract

View articletitled, Experimental study of electron beam projection lithography mask defect printability

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Mask split algorithm for stencil mask in electron projection lithography

Hiroshi Yamashita; Kunio Takeuchi; Hideki Masaoka

J. Vac. Sci. Technol. B 19, 2478–2482 (2001) https://doi.org/10.1116/1.1412897

Abstract

View articletitled, Mask split algorithm for stencil mask in electron projection lithography

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Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography

Morimi Osawa; Kimitoshi Takahashi; Masami Sato; Hiroshi Arimoto; Kozo Ogino; Hiromi Hoshino; Yasuhide Machida

J. Vac. Sci. Technol. B 19, 2483–2487 (2001) https://doi.org/10.1116/1.1410090

Abstract

View articletitled, Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography

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Comparative study of resolution limiting factors in electron beam lithography using the edge roughness evaluation method

Masaki Yoshizawa; Shigeru Moriya

J. Vac. Sci. Technol. B 19, 2488–2493 (2001) https://doi.org/10.1116/1.1410087

Abstract

View articletitled, Comparative study of resolution limiting factors in electron beam lithography using the edge roughness evaluation method

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Effect of resist sensitivity ratio on T-gate fabrication

Y. Chen; D. S. Macintyre; S. Thoms

J. Vac. Sci. Technol. B 19, 2494–2498 (2001) https://doi.org/10.1116/1.1420577

Abstract

View articletitled, Effect of resist sensitivity ratio on T-gate fabrication

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Performance of the Raith 150 electron-beam lithography system

James G. Goodberlet; J. Todd Hastings; Henry I. Smith

J. Vac. Sci. Technol. B 19, 2499–2503 (2001) https://doi.org/10.1116/1.1414018

Abstract

View articletitled, Performance of the Raith 150 electron-beam lithography system

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Influence of sub-100 nm scattering on high-energy electron beam lithography

Erik H. Anderson; Deirdre L. Olynick; Weilun Chao; Bruce Harteneck; Eugene Veklerov

J. Vac. Sci. Technol. B 19, 2504–2507 (2001) https://doi.org/10.1116/1.1415506

Abstract

View articletitled, Influence of sub-100 nm scattering on high-energy electron beam lithography

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Energy deposition and transfer in electron-beam lithography

Bo Wu; Andrew R. Neureuther

J. Vac. Sci. Technol. B 19, 2508–2511 (2001) https://doi.org/10.1116/1.1421548

Abstract

View articletitled, Energy deposition and transfer in electron-beam lithography

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Mark detection in low-energy electron-beam lithography

G. S. Fritz; D. P. Kern

J. Vac. Sci. Technol. B 19, 2512–2515 (2001) https://doi.org/10.1116/1.1421546

Abstract

View articletitled, Mark detection in low-energy electron-beam lithography

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Simulation of time-dependent charging of resist on Si under electron-beam irradiation

Masatoshi Kotera

J. Vac. Sci. Technol. B 19, 2516–2519 (2001) https://doi.org/10.1116/1.1421570

Abstract

View articletitled, Simulation of time-dependent charging of resist on Si under electron-beam irradiation

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ION BEAM TECHNOLOGY

Characterization of a process development tool for ion projection lithography

Hans Loeschner; Gerhard Stengl; Rainer Kaesmaier; Andreas Wolter

J. Vac. Sci. Technol. B 19, 2520–2524 (2001) https://doi.org/10.1116/1.1421562

Abstract

View articletitled, Characterization of a process development tool for ion projection lithography

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Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

M. M. Mitan; D. P. Pivin; T. L. Alford; J. W. Mayer

J. Vac. Sci. Technol. B 19, 2525–2528 (2001) https://doi.org/10.1116/1.1408953

Abstract

View articletitled, Direct patterning of nanometer-scale silicide structures by focused ion-beam implantation through a thin barrier layer

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Ion beam aperture-array lithography

Paul Ruchhoeft; J. C. Wolfe; Robert Bass

J. Vac. Sci. Technol. B 19, 2529–2532 (2001) https://doi.org/10.1116/1.1420578

Abstract

View articletitled, Ion beam aperture-array lithography

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Limitations of focused ion beam nanomachining

C. Lehrer; L. Frey; S. Petersen; H. Ryssel

J. Vac. Sci. Technol. B 19, 2533–2538 (2001) https://doi.org/10.1116/1.1417553

Abstract

View articletitled, Limitations of focused ion beam nanomachining

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Chemically enhanced focused ion beam micromachining of copper

J. C. Gonzalez; D. P. Griffis; T. T. Miau; P. E. Russell

J. Vac. Sci. Technol. B 19, 2539–2542 (2001) https://doi.org/10.1116/1.1418406

Abstract

View articletitled, Chemically enhanced focused ion beam micromachining of copper

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Contact resistance of focused ion beam deposited platinum and tungsten films to silicon

Anthony J. DeMarco; John Melngailis

J. Vac. Sci. Technol. B 19, 2543–2546 (2001) https://doi.org/10.1116/1.1410094

Abstract

View articletitled, Contact resistance of focused ion beam deposited platinum and tungsten films to silicon

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GaN focused ion beam micromachining with gas-assisted etching

I. Chyr; A. J. Steckl

J. Vac. Sci. Technol. B 19, 2547–2550 (2001) https://doi.org/10.1116/1.1417550

Abstract

View articletitled, GaN focused ion beam micromachining with gas-assisted etching

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Mg–Ga liquid metal ion source for implantation doping of GaN

J. Cheng; A. J. Steckl

J. Vac. Sci. Technol. B 19, 2551–2554 (2001) https://doi.org/10.1116/1.1410095

Abstract

View articletitled, Mg–Ga liquid metal ion source for implantation doping of GaN

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SOURCES AND OPTICS

Outline of a variable-axis lens with arbitrary shift of the axis in one direction

Peter Schmid; Harald Rose

J. Vac. Sci. Technol. B 19, 2555–2565 (2001) https://doi.org/10.1116/1.1418408

Abstract

View articletitled, Outline of a variable-axis lens with arbitrary shift of the axis in one direction

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Electron–electron interactions in multibeam lithography columns

M. Mankos; A. Sagle; S. T. Coyle; A. Fernandez

J. Vac. Sci. Technol. B 19, 2566–2571 (2001) https://doi.org/10.1116/1.1420200

Abstract

View articletitled, Electron–electron interactions in multibeam lithography columns

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Stochastic Coulomb interaction effect in ion-neutralized electron-beam projection optics

Kimitoshi Takahashi; Liqun Han; R. Fabian Pease; W. Dan Meisburger

J. Vac. Sci. Technol. B 19, 2572–2580 (2001) https://doi.org/10.1116/1.1410092

Abstract

View articletitled, Stochastic Coulomb interaction effect in ion-neutralized electron-beam projection optics

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Progress toward a high-brightness photoemission source for multiple-electron beam lithography

S. T. Coyle; A. Fernandez; G. Janaway; A. Sagle; M. Mankos

J. Vac. Sci. Technol. B 19, 2581–2584 (2001) https://doi.org/10.1116/1.1420202

Abstract

View articletitled, Progress toward a high-brightness photoemission source for multiple-electron beam lithography

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Recent tests of negative electron affinity photocathodes as source for electron lithography and microscopy

P. Arcuni; S. Presley; V. Aebi; W. E. Spicer

J. Vac. Sci. Technol. B 19, 2585–2590 (2001) https://doi.org/10.1116/1.1418416

Abstract

View articletitled, Recent tests of negative electron affinity photocathodes as source for electron lithography and microscopy

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Stability improvement at high emission densities for gold thin film photocathodes used in advanced electron beam lithography

Suresh Gosavi; J. M. McCarthy; J. L. House; Bart G. Scholte van Mast; G. Janaway; C. N. Berglund

J. Vac. Sci. Technol. B 19, 2591–2597 (2001) https://doi.org/10.1116/1.1418414

Abstract

View articletitled, Stability improvement at high emission densities for gold thin film photocathodes used in advanced electron beam lithography

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Microfabricated field emission devices using carbon nanofibers as cathode elements

M. A. Guillorn; A. V. Melechko; V. I. Merkulov; E. D. Ellis; M. L. Simpson; D. H. Lowndes; L. R. Baylor; G. J. Bordonaro

J. Vac. Sci. Technol. B 19, 2598–2601 (2001) https://doi.org/10.1116/1.1420201

Abstract

View articletitled, Microfabricated field emission devices using carbon nanofibers as cathode elements

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Characterization of multicusp-plasma ion source brightness using micron-scale apertures

K. L. Scott; T.-J. King; K.-N. Leung; R. F. Pease

J. Vac. Sci. Technol. B 19, 2602–2606 (2001) https://doi.org/10.1116/1.1414019

Abstract

View articletitled, Characterization of multicusp-plasma ion source brightness using micron-scale apertures

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Wave optical calculations of electron probes

B. Rafferty; T. R. Groves

J. Vac. Sci. Technol. B 19, 2607–2611 (2001) https://doi.org/10.1116/1.1418412

Abstract

View articletitled, Wave optical calculations of electron probes

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MASK TECHNOLOGY

Review of progress in extreme ultraviolet lithography masks

Scott Hector; Pawitter Mangat

J. Vac. Sci. Technol. B 19, 2612–2616 (2001) https://doi.org/10.1116/1.1408957

Abstract

View articletitled, Review of progress in extreme ultraviolet lithography masks

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Optical-constant tunable $({ZrO}_{2})_{x} /({Cr}_{2} O_{3})_{y} /({Al}_{2} O_{3})_{1−x−y}$ optical superlattices for attenuated phase shift mask in ArF lithography

F. D. Lai; L. A. Wang

J. Vac. Sci. Technol. B 19, 2617–2620 (2001) https://doi.org/10.1116/1.1408951

Abstract

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Prediction of placement error of extreme ultraviolet lithography mask by simulation model with equivalent layout pattern

Akira Chiba; Eiichi Hoshino; Masashi Takahashi; Hiromasa Yamanashi; Hiromasa Hoko; Byoung Taek Lee; Takashi Yoneda; Masaaki Ito; Taro Ogawa; Shinji Okazaki

J. Vac. Sci. Technol. B 19, 2621–2625 (2001) https://doi.org/10.1116/1.1414020

Abstract

View articletitled, Prediction of placement error of extreme ultraviolet lithography mask by simulation model with equivalent layout pattern

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Predicting pattern-specific distortions induced during optical mask patterning

J. Sohn; R. L. Engelstad; E. G. Lovell

J. Vac. Sci. Technol. B 19, 2626–2630 (2001) https://doi.org/10.1116/1.1408956

Abstract

View articletitled, Predicting pattern-specific distortions induced during optical mask patterning

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Distortion correction in adaptive membrane masks

X. Zhuang; M. Feldman

J. Vac. Sci. Technol. B 19, 2631–2634 (2001) https://doi.org/10.1116/1.1408955

Abstract

View articletitled, Distortion correction in adaptive membrane masks

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Writing, repairing, and inspecting of extreme ultraviolet lithography reticles considering the impact of the materials

J. R. Wasson; B. Lu; P. J. S. Mangat; K. Nordquist; D. J. Resnick

J. Vac. Sci. Technol. B 19, 2635–2640 (2001) https://doi.org/10.1116/1.1408958

Abstract

View articletitled, Writing, repairing, and inspecting of extreme ultraviolet lithography reticles considering the impact of the materials

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Thermomechanical distortions of the PREVAIL mask system during exposure

P.-T. Lee; C. Martin; R. Engelstad; E. G. Lovell; C. Robinson; A. Flamholz

J. Vac. Sci. Technol. B 19, 2641–2645 (2001) https://doi.org/10.1116/1.1409385

Abstract

View articletitled, Thermomechanical distortions of the PREVAIL mask system during exposure

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Simulating the response of electron-beam projection lithography masks under standardized mounting techniques

C.-f. Chen; R. L. Engelstad; E. G. Lovell; A. E. Novembre

J. Vac. Sci. Technol. B 19, 2646–2651 (2001) https://doi.org/10.1116/1.1409386

Abstract

View articletitled, Simulating the response of electron-beam projection lithography masks under standardized mounting techniques

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Simulating the effects of pattern density gradients on electron-beam projection lithography pattern transfer distortions

P. L. Reu; R. L. Engelstad; E. G. Lovell; C. K. Magg; M. J. Lercel; R. S. Mackay

J. Vac. Sci. Technol. B 19, 2652–2658 (2001) https://doi.org/10.1116/1.1409387

Abstract

View articletitled, Simulating the effects of pattern density gradients on electron-beam projection lithography pattern transfer distortions

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Pattern placement correction methodology for 200 mm SCALPEL masks

J. Vac. Sci. Technol. B 19, 2659–2664 (2001) https://doi.org/10.1116/1.1412891

Abstract

View articletitled, Pattern placement correction methodology for 200 mm SCALPEL masks

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Mechanical, geometrical, and electrical characterization of silicon membranes for open stencil masks

E. Sossna; A. Degen; I. W. Rangelow; M. Drzik; P. Hudek; T. E. Tiwald; J. A. Woollam

J. Vac. Sci. Technol. B 19, 2665–2670 (2001) https://doi.org/10.1116/1.1417548

Abstract

View articletitled, Mechanical, geometrical, and electrical characterization of silicon membranes for open stencil masks

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Patterning-induced image placement distortions on electron beam projection lithography membrane masks

Michael Lercel; Christopher Magg; Mark Lawliss; Carey Williams; Neal Caldwell; Robin Ackel; Louis Kindt; Kenneth Racette; Phillip Reu; Roxann Engelstad; R. Scott Mackay

J. Vac. Sci. Technol. B 19, 2671–2677 (2001) https://doi.org/10.1116/1.1409381

Abstract

View articletitled, Patterning-induced image placement distortions on electron beam projection lithography membrane masks

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RESIST TECHNOLOGY

Development of 157 nm positive resists

H. Ito; G. M. Wallraff; N. Fender; P. J. Brock; W. D. Hinsberg; A. Mahorowala; C. E. Larson; H. D. Truong; G. Breyta; R. D. Allen

J. Vac. Sci. Technol. B 19, 2678–2684 (2001) https://doi.org/10.1116/1.1415512

Abstract

View articletitled, Development of 157 nm positive resists

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Characterization and modeling of volumetric and mechanical properties for step and flash imprint lithography photopolymers

Matthew Colburn; Itai Suez; Byung Jin Choi; Mario Meissl; Todd Bailey; S. V. Sreenivasan; John G. Ekerdt; C. Grant Willson

J. Vac. Sci. Technol. B 19, 2685–2689 (2001) https://doi.org/10.1116/1.1420199

Abstract

View articletitled, Characterization and modeling of volumetric and mechanical properties for step and flash imprint lithography photopolymers

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Thin film confinement effects on the thermal properties of model photoresist polymers

Christopher L. Soles; Eric K. Lin; Joseph L. Lenhart; Ronald L. Jones; Wen-li Wu; Darı́o L. Goldfarb; Marie Angelopoulos

J. Vac. Sci. Technol. B 19, 2690–2693 (2001) https://doi.org/10.1116/1.1415502

Abstract

View articletitled, Thin film confinement effects on the thermal properties of model photoresist polymers

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Characterization and simulation of surface and line-edge roughness in photoresists

V. Constantoudis; E. Gogolides; G. P. Patsis; A. Tserepi; E. S. Valamontes

J. Vac. Sci. Technol. B 19, 2694–2698 (2001) https://doi.org/10.1116/1.1420582

Abstract

View articletitled, Characterization and simulation of surface and line-edge roughness in photoresists

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Confinement effects on the spatial extent of the reaction front in ultrathin chemically amplified photoresists

Darı́o L. Goldfarb; Marie Angelopoulos; Eric K. Lin; Ronald L. Jones; Christopher L. Soles; Joseph L. Lenhart; Wen-li Wu

J. Vac. Sci. Technol. B 19, 2699–2704 (2001) https://doi.org/10.1116/1.1421559

Abstract

View articletitled, Confinement effects on the spatial extent of the reaction front in ultrathin chemically amplified photoresists

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Characterization of fluoropolymers for 157 nm chemically amplified resist

Toshiro Itani; Minoru Toriumi; Takuya Naito; Seiichi Ishikawa; Seiro Miyoshi; Tamio Yamazaki; Manabu Watanabe

J. Vac. Sci. Technol. B 19, 2705–2708 (2001) https://doi.org/10.1116/1.1412889

Abstract

View articletitled, Characterization of fluoropolymers for 157 nm chemically amplified resist

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Supercritical resist drying for isolated nanoline formation

Hideo Namatsu

J. Vac. Sci. Technol. B 19, 2709–2712 (2001) https://doi.org/10.1116/1.1418411

Abstract

View articletitled, Supercritical resist drying for isolated nanoline formation

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Linewidth reduction using liquid ashing for sub-100 nm critical dimensions with 248 nm lithography

A. G. Timko; J. Frackoviak; L. C. Hopkins; F. P. Klemens; L. E. Trimble; O. Nalamasu; G. P. Watson; W. M. Mansfield; D. Barr; J. Li

J. Vac. Sci. Technol. B 19, 2713–2716 (2001) https://doi.org/10.1116/1.1412892

Abstract

View articletitled, Linewidth reduction using liquid ashing for sub-100 nm critical dimensions with 248 nm lithography

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NANOFABRICATION AND NANODEVICES

Hands-on tools for nanotechnology

A. Seeger; S. Paulson; M. Falvo; A. Helser; R. M. Taylor, II; R. Superfine; S. Washburn

J. Vac. Sci. Technol. B 19, 2717–2722 (2001) https://doi.org/10.1116/1.1412890

Abstract

View articletitled, Hands-on tools for nanotechnology

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“NANOJET”: Tool for the nanofabrication

I. W. Rangelow; J. Voigt; K. Edinger

J. Vac. Sci. Technol. B 19, 2723–2726 (2001) https://doi.org/10.1116/1.1415504

Abstract

View articletitled, “NANOJET”: Tool for the nanofabrication

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Investigation of radical–surface reactions

J. Voigt; I. W. Rangelow

J. Vac. Sci. Technol. B 19, 2727–2731 (2001) https://doi.org/10.1116/1.1414014

Abstract

View articletitled, Investigation of radical–surface reactions

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Electron induced chemical nanolithography with self-assembled monolayers

W. Geyer; V. Stadler; W. Eck; A. Gölzhäuser; M. Grunze; M. Sauer; T. Weimann; P. Hinze

J. Vac. Sci. Technol. B 19, 2732–2735 (2001) https://doi.org/10.1116/1.1421560

Abstract

View articletitled, Electron induced chemical nanolithography with self-assembled monolayers

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Electrostatic self assembly of nanocomposite polymers in grating structures

Xing Cheng; L. Jay Guo

J. Vac. Sci. Technol. B 19, 2736–2740 (2001) https://doi.org/10.1116/1.1420530

Abstract

View articletitled, Electrostatic self assembly of nanocomposite polymers in grating structures

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Lithographically induced self-assembly of microstructures with a liquid-filled gap between the mask and polymer surface

Paru Deshpande; Stephen Y. Chou

J. Vac. Sci. Technol. B 19, 2741–2744 (2001) https://doi.org/10.1116/1.1414015

Abstract

View articletitled, Lithographically induced self-assembly of microstructures with a liquid-filled gap between the mask and polymer surface

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Nanoscale modification of electronic states of graphite by highly charged Ar-ion irradiation

T. Meguro; A. Hida; M. Suzuki; Y. Koguchi; H. Takai; Y. Yamamoto; K. Maeda; Y. Aoyagi

J. Vac. Sci. Technol. B 19, 2745–2748 (2001) https://doi.org/10.1116/1.1421549

Abstract

View articletitled, Nanoscale modification of electronic states of graphite by highly charged Ar-ion irradiation

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High- $Q$ photonic crystal microcavities fabricated in a thin GaAs membrane

C. Reese; B. Gayral; B. D. Gerardot; A. Imamoǧlu; P. M. Petroff; E. Hu

J. Vac. Sci. Technol. B 19, 2749–2752 (2001) https://doi.org/10.1116/1.1412893

Abstract

View articletitled, High-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Q</mi></math> photonic crystal microcavities fabricated in a thin GaAs membrane

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Patterning processes for fabricating sub-100 nm pseudo-spin valve structures

Bernhard Vögeli; Henry I. Smith; Fernando J. Castaño; Susumu Haratani; Yaowu Hao; C. A. Ross

J. Vac. Sci. Technol. B 19, 2753–2756 (2001) https://doi.org/10.1116/1.1415507

Abstract

View articletitled, Patterning processes for fabricating sub-100 nm pseudo-spin valve structures

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Infrared frequency selective surfaces fabricated using optical lithography and phase-shift masks

S. J. Spector; D. K. Astolfi; S. P. Doran; T. M. Lyszczarz; J. E. Raynolds

J. Vac. Sci. Technol. B 19, 2757–2760 (2001) https://doi.org/10.1116/1.1420198

Abstract

View articletitled, Infrared frequency selective surfaces fabricated using optical lithography and phase-shift masks

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Focused ion beam patterned Hall bars and Ohmic columns embedded in molecular-beam-epitaxial-grown GaAs/AlGaAs

S. Vijendran; P. See; A. Ahmed; H. E. Beere; G. A. C. Jones; C. E. Norman

J. Vac. Sci. Technol. B 19, 2761–2765 (2001) https://doi.org/10.1116/1.1421556

Abstract

View articletitled, Focused ion beam patterned Hall bars and Ohmic columns embedded in molecular-beam-epitaxial-grown GaAs/AlGaAs

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New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect

Seema Somani; Steven Kasapi; Kenneth Wilsher; William Lo; Roman Sobolewski; Gregory Gol’tsman

J. Vac. Sci. Technol. B 19, 2766–2769 (2001) https://doi.org/10.1116/1.1412899

Abstract

View articletitled, New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect

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Fabrication of single and coupled quantum dots in single-wall carbon nanotubes

Masaki Suzuki; Koji Ishibashi; Tetsuya Ida; Daiju Tsuya; Kenichirou Toratani; Yoshinobu Aoyagi

J. Vac. Sci. Technol. B 19, 2770–2774 (2001) https://doi.org/10.1116/1.1415505

Abstract

View articletitled, Fabrication of single and coupled quantum dots in single-wall carbon nanotubes

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Nanofabrication of two-dimensional photonic crystal mirrors for 1.5 μm short cavity lasers

T. D. Happ; A. Markard; M. Kamp; A. Forchel; S. Anand; J.-L. Gentner; N. Bouadma

J. Vac. Sci. Technol. B 19, 2775–2778 (2001) https://doi.org/10.1116/1.1412898

Abstract

View articletitled, Nanofabrication of two-dimensional photonic crystal mirrors for 1.5 μm short cavity lasers

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Nanoimprint lithography of high-density cobalt dot patterns for fine tuning of dipole interactions

M. Natali; A. Lebib; E. Cambril; Y. Chen; I. L. Prejbeanu; K. Ounadjela

J. Vac. Sci. Technol. B 19, 2779–2783 (2001) https://doi.org/10.1116/1.1421573

Abstract

View articletitled, Nanoimprint lithography of high-density cobalt dot patterns for fine tuning of dipole interactions

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Nanoscale patterning using self-assembled polymers for semiconductor applications

K. W. Guarini; C. T. Black; K. R. Milkove; R. L. Sandstrom

J. Vac. Sci. Technol. B 19, 2784–2788 (2001) https://doi.org/10.1116/1.1421551

Abstract

View articletitled, Nanoscale patterning using self-assembled polymers for semiconductor applications

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Field emission emitter array with a self-aligned volcano-type gate: Fabrication and characterization

Tz. Ivanov; I. W. Rangelow; St. Biehl; I. R. Chakarov

J. Vac. Sci. Technol. B 19, 2789–2792 (2001) https://doi.org/10.1116/1.1417551

Abstract

View articletitled, Field emission emitter array with a self-aligned volcano-type gate: Fabrication and characterization

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Induced crystallization as a nonlithographic pattern transfer technique for nanofabrication

M. J. Cabral; W. K. Lye; J. C. Bean; M. L. Reed; T. Chraska; S. Dj. Mesarovic; R. Hull; A. B. Phillips

J. Vac. Sci. Technol. B 19, 2793–2796 (2001) https://doi.org/10.1116/1.1420532

Abstract

View articletitled, Induced crystallization as a nonlithographic pattern transfer technique for nanofabrication

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IMPRINT LITHOGRAPHY

Fabrication of T gate structures by nanoimprint lithography

D. S. Macintyre; Y. Chen; D. Lim; S. Thoms

J. Vac. Sci. Technol. B 19, 2797–2800 (2001) https://doi.org/10.1116/1.1417552

Abstract

View articletitled, Fabrication of T gate structures by nanoimprint lithography

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Room temperature replication in spin on glass by nanoimprint technology

S. Matsui; Y. Igaku; H. Ishigaki; J. Fujita; M. Ishida; Y. Ochiai; M. Komuro; H. Hiroshima

J. Vac. Sci. Technol. B 19, 2801–2805 (2001) https://doi.org/10.1116/1.1417547

Abstract

View articletitled, Room temperature replication in spin on glass by nanoimprint technology

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Step and flash imprint lithography: Defect analysis

T. Bailey; B. Smith; B. J. Choi; M. Colburn; M. Meissl; S. V. Sreenivasan; J. G. Ekerdt; C. G. Willson

J. Vac. Sci. Technol. B 19, 2806–2810 (2001) https://doi.org/10.1116/1.1420203

Abstract

View articletitled, Step and flash imprint lithography: Defect analysis

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Study of the resist deformation in nanoimprint lithography

Yoshihiko Hirai; Masaki Fujiwara; Takahiro Okuno; Yoshio Tanaka; Masataka Endo; Sigeo Irie; Kazuo Nakagawa; Masaru Sasago

J. Vac. Sci. Technol. B 19, 2811–2815 (2001) https://doi.org/10.1116/1.1415510

Abstract

View articletitled, Study of the resist deformation in nanoimprint lithography

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Fabrication of large area 100 nm pitch grating by spatial frequency doubling and nanoimprint lithography for subwavelength optical applications

Zhaoning Yu; Wei Wu; Lei Chen; Stephen Y. Chou

J. Vac. Sci. Technol. B 19, 2816–2819 (2001) https://doi.org/10.1116/1.1409384

Abstract

View articletitled, Fabrication of large area 100 nm pitch grating by spatial frequency doubling and nanoimprint lithography for subwavelength optical applications

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MEMS AND BIOLOGICAL APPLICATIONS

Photolithographic patterning of proteins with photoresists processable under biocompatible conditions

Antonios Douvas; Panagiotis Argitis; Constantinos D. Diakoumakos; Konstantinos Misiakos; Dimitra Dimotikali; Sotirios E. Kakabakos

J. Vac. Sci. Technol. B 19, 2820–2824 (2001) https://doi.org/10.1116/1.1408954

Abstract

View articletitled, Photolithographic patterning of proteins with photoresists processable under biocompatible conditions

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Single cell detection with micromechanical oscillators

B. Ilic; D. Czaplewski; M. Zalalutdinov; H. G. Craighead; P. Neuzil; C. Campagnolo; C. Batt

J. Vac. Sci. Technol. B 19, 2825–2828 (2001) https://doi.org/10.1116/1.1421572

Abstract

View articletitled, Single cell detection with micromechanical oscillators

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Dual exposure glass layer suspended structures: A simplified fabrication process for suspended nanostructures on planar substrates

D. M. Tanenbaum; A. Olkhovets; L. Sekaric

J. Vac. Sci. Technol. B 19, 2829–2833 (2001) https://doi.org/10.1116/1.1417546

Abstract

View articletitled, Dual exposure glass layer suspended structures: A simplified fabrication process for suspended nanostructures on planar substrates

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Observation and characteristics of mechanical vibration in three-dimensional nanostructures and pillars grown by focused ion beam chemical vapor deposition

J. Fujita; M. Ishida; T. Sakamoto; Y. Ochiai; T. Kaito; S. Matsui

J. Vac. Sci. Technol. B 19, 2834–2837 (2001) https://doi.org/10.1116/1.1417545

Abstract

View articletitled, Observation and characteristics of mechanical vibration in three-dimensional nanostructures and pillars grown by focused ion beam chemical vapor deposition

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Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems

A. R. Stonas; N. C. MacDonald; K. L. Turner; S. P. DenBaars; E. L. Hu

J. Vac. Sci. Technol. B 19, 2838–2841 (2001) https://doi.org/10.1116/1.1415508

Abstract

View articletitled, Photoelectrochemical undercut etching for fabrication of GaN microelectromechanical systems

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Heat-depolymerizable polycarbonates as electron beam patternable sacrificial layers for nanofluidics

C. K. Harnett; G. W. Coates; H. G. Craighead

J. Vac. Sci. Technol. B 19, 2842–2845 (2001) https://doi.org/10.1116/1.1409383

Abstract

View articletitled, Heat-depolymerizable polycarbonates as electron beam patternable sacrificial layers for nanofluidics

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Fabrication of microfluidic devices in silicon and plastic using plasma etching

D. F. Weston; T. Smekal; D. B. Rhine; J. Blackwell

J. Vac. Sci. Technol. B 19, 2846–2851 (2001) https://doi.org/10.1116/1.1421571

Abstract

View articletitled, Fabrication of microfluidic devices in silicon and plastic using plasma etching

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ALIGNMENT AND METROLOGY

Electron beam inspection system based on the projection imaging electron microscope

Motosuke Miyoshi; Yuichiro Yamazaki; Ichirota Nagahama; Atsushi Onishi; Katsuya Okumura

J. Vac. Sci. Technol. B 19, 2852–2855 (2001) https://doi.org/10.1116/1.1421561

Abstract

View articletitled, Electron beam inspection system based on the projection imaging electron microscope

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Novel high resolution scanning thermal probe

K. Edinger; T. Gotszalk; I. W. Rangelow

J. Vac. Sci. Technol. B 19, 2856–2860 (2001) https://doi.org/10.1116/1.1420580

Abstract

View articletitled, Novel high resolution scanning thermal probe

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Optical mask metrology for next generation lithography

Wolfgang Vollrath; Gerhard Schlüter; Gerd Scheuring

J. Vac. Sci. Technol. B 19, 2861–2863 (2001) https://doi.org/10.1116/1.1420204

Abstract

View articletitled, Optical mask metrology for next generation lithography

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Contactless testing of wiring networks by an electron beam system utilizing induced current detection

S. D. Golladay

J. Vac. Sci. Technol. B 19, 2864–2868 (2001) https://doi.org/10.1116/1.1415509

Abstract

View articletitled, Contactless testing of wiring networks by an electron beam system utilizing induced current detection

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Alignment system using voltage contrast images for low-energy electron-beam lithography

Tetsuro Nakasugi; Atsushi Ando; Kazuyoshi Sugihara; Yuichiro Yamazaki; Motosuke Miyoshi; Katsuya Okumura

J. Vac. Sci. Technol. B 19, 2869–2873 (2001) https://doi.org/10.1116/1.1421544

Abstract

View articletitled, Alignment system using voltage contrast images for low-energy electron-beam lithography

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Thermal conductivity measurements of thin-film resist

Dachen Chu; Maxat Touzelbaev; Kenneth E. Goodson; Sergey Babin; R. Fabian Pease

J. Vac. Sci. Technol. B 19, 2874–2877 (2001) https://doi.org/10.1116/1.1421557

Abstract

View articletitled, Thermal conductivity measurements of thin-film resist

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Subresolution placement using infrared image alignment to the computer-aided design database for backside probing and editing

M. Sengupta; M. Sinha; G. Dajee; C. C. Tsao

J. Vac. Sci. Technol. B 19, 2878–2883 (2001) https://doi.org/10.1116/1.1421574