Skip Nav Destination
Issues
July 2001
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
In this Issue
REVIEW ARTICLE
Structure shape and stability of nanometric sized particles
J. Vac. Sci. Technol. B 19, 1091–1103 (2001)
https://doi.org/10.1116/1.1387089
REGULAR ARTICLES
Growth of germanium quantum dots on different dielectric substrates by chemical-vapor deposition
Dong-Won Kim; Young-Hee Kim; Xiangdong Chen; Choong-Ho Lee; Seoung-Chel Song; Freek E. Prins; Dim-Lee Kwong; Sanjay Banerjee
J. Vac. Sci. Technol. B 19, 1104–1108 (2001)
https://doi.org/10.1116/1.1387453
Preparation of highly ordered nanoporous Co membranes assembled by small quantum-sized Co particles
J. Vac. Sci. Technol. B 19, 1109–1114 (2001)
https://doi.org/10.1116/1.1378011
Synthesis and microstructure of gallium phosphide nanowires
J. Vac. Sci. Technol. B 19, 1115–1118 (2001)
https://doi.org/10.1116/1.1382871
Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal–oxide–semiconductor devices
Kangguo Cheng; Jinju Lee; Zhi Chen; Samir A. Shah; Karl Hess; Jean-Pierre Leburton; Joseph W. Lyding
J. Vac. Sci. Technol. B 19, 1119–1123 (2001)
https://doi.org/10.1116/1.1385687
Low-energy carbon and nitrogen ion implantation in silicon
J. Vac. Sci. Technol. B 19, 1124–1132 (2001)
https://doi.org/10.1116/1.1381068
Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry
Z. X. Jiang; S. Backer; J. J. Lee; L. Y. Wu; T. Guenther; D. Sieloff; P. Choi; M. Foisy; P. F. A. Alkemade
J. Vac. Sci. Technol. B 19, 1133–1137 (2001)
https://doi.org/10.1116/1.1384555
Characterization of atomic-layer-deposited silicon stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors
Anri Nakajima; Takashi Yoshimoto; Toshirou Kidera; Katsunori Obata; Shin Yokoyama; Hideo Sunami; Masataka Hirose
J. Vac. Sci. Technol. B 19, 1138–1143 (2001)
https://doi.org/10.1116/1.1387450
Comparison of the effective oxide thickness determined by ellipsometry with the result by medium energy ion scattering spectroscopy and high-resolution transmission electron microscopy
Hyun Mo Cho; Yun Woo Lee; In Won Lee; Dae Won Moon; Hwack Joo Lee; Byoung Yoon Kim; Hyun Jong Kim; Sang Youl Kim; Yong Jai Cho
J. Vac. Sci. Technol. B 19, 1144–1149 (2001)
https://doi.org/10.1116/1.1379799
Spatially resolved measurements of the capacitance by scanning tunneling microscope combined with a capacitance bridge
J. Vac. Sci. Technol. B 19, 1150–1153 (2001)
https://doi.org/10.1116/1.1379796
Applications of atomic force microscopy/scanning capacitance microscopy in imaging implant structures of semiconductor devices
J. Vac. Sci. Technol. B 19, 1154–1157 (2001)
https://doi.org/10.1116/1.1384556
Focusing of low energy electrons by submicrometer patterned structures in low energy electron microscopy
J. Vac. Sci. Technol. B 19, 1158–1163 (2001)
https://doi.org/10.1116/1.1385688
AlN-based film bulk acoustic resonator devices with multilayers reflector for rf bandpass filter application
J. Vac. Sci. Technol. B 19, 1164–1168 (2001)
https://doi.org/10.1116/1.1385685
Silicon V grooves fabricated using etch mask prepared by room-temperature magnetron sputtering
J. Vac. Sci. Technol. B 19, 1169–1172 (2001)
https://doi.org/10.1116/1.1381067
Chemical detection based on adsorption-induced and photoinduced stresses in microelectromechanical systems devices
J. Vac. Sci. Technol. B 19, 1173–1179 (2001)
https://doi.org/10.1116/1.1387082
Structural and electronic properties of metal-silicide/silicon interfaces: A first-principles study
J. Vac. Sci. Technol. B 19, 1180–1185 (2001)
https://doi.org/10.1116/1.1381063
Effect of annealing ambient on sidewall deformation and contact resistance in dichlorosilane-based W-polycide gate
Sang-Wook Park; Dong-Jin Kim; Cha-Deok Dong; Noh-Yeal Kwak; Young-Taek Kong; Chan-Ho Lee; Seung-Cheol Lee; Se-Ho Park
J. Vac. Sci. Technol. B 19, 1186–1194 (2001)
https://doi.org/10.1116/1.1385917
Effects of titanium sputtering schemes and preamorphization on the junction characteristics of Ti salicide
J. Vac. Sci. Technol. B 19, 1195–1200 (2001)
https://doi.org/10.1116/1.1385686
Characterization of Cu surface cleaning by hydrogen plasma
J. Vac. Sci. Technol. B 19, 1201–1211 (2001)
https://doi.org/10.1116/1.1387084
Highly reliable chemical–mechanical polishing process for organic low-k methylsilsesquioxane
J. Vac. Sci. Technol. B 19, 1212–1218 (2001)
https://doi.org/10.1116/1.1385684
Calculational study on membrane mask distortion and correction
J. Vac. Sci. Technol. B 19, 1229–1234 (2001)
https://doi.org/10.1116/1.1387463
Plasma and X-UV source characteristics for Al targets heated by 40 ns Nd-laser pulses
J. Vac. Sci. Technol. B 19, 1241–1252 (2001)
https://doi.org/10.1116/1.1382870
Characterization of thin photosensitive polyimide films for future metallization schemes
J. Vac. Sci. Technol. B 19, 1253–1258 (2001)
https://doi.org/10.1116/1.1379797
Experimental study of microcylindrical lenses fabricated using focused-ion-beam technology
J. Vac. Sci. Technol. B 19, 1259–1263 (2001)
https://doi.org/10.1116/1.1379795
Critical dimension guarantee for the next generation photomasks with critical dimension scanning electron microscope
J. Vac. Sci. Technol. B 19, 1264–1268 (2001)
https://doi.org/10.1116/1.1381064
Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation
Simon Karecki; Ritwik Chatterjee; Laura Pruette; Rafael Reif; Victor Vartanian; Terry Sparks; Laurie Beu; Konstantin Novoselov
J. Vac. Sci. Technol. B 19, 1269–1292 (2001)
https://doi.org/10.1116/1.1387088
Characterization of iodoheptafluoropropane as a dielectric etchant. II. Wafer surface analysis
Simon Karecki; Ritwik Chatterjee; Laura Pruette; Rafael Reif; Victor Vartanian; Terry Sparks; J. J. Lee; Laurie Beu; Charles Miller
J. Vac. Sci. Technol. B 19, 1293–1305 (2001)
https://doi.org/10.1116/1.1387086
Characterization of iodoheptafluoropropane as a dielectric etchant. III. Effluent analysis
Simon Karecki; Ritwik Chatterjee; Laura Pruette; Rafael Reif; Victor Vartanian; Terry Sparks; Laurie Beu
J. Vac. Sci. Technol. B 19, 1306–1318 (2001)
https://doi.org/10.1116/1.1387080
Molecular-beam study of the plasma-surface kinetics of silicon dioxide and photoresist etching with chlorine
J. Vac. Sci. Technol. B 19, 1319–1327 (2001)
https://doi.org/10.1116/1.1387452
Highly selective photoelectrochemical etching of nitride materials for defect investigation and device fabrication
P. Visconti; M. A. Reshchikov; K. M. Jones; D. F. Wang; R. Cingolani; H. Morkoç̌; R. J. Molnar; D. J. Smith
J. Vac. Sci. Technol. B 19, 1328–1333 (2001)
https://doi.org/10.1116/1.1378009
Fabrication of photonic quantum ring laser using chemically assisted ion beam etching
J. Vac. Sci. Technol. B 19, 1334–1338 (2001)
https://doi.org/10.1116/1.1382872
Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms
J. Vac. Sci. Technol. B 19, 1339–1345 (2001)
https://doi.org/10.1116/1.1387459
Ion energy distributions and optical emission spectra in -based process chamber cleaning plasmas
J. Vac. Sci. Technol. B 19, 1346–1357 (2001)
https://doi.org/10.1116/1.1379794
Choice of boron–carbon–nitrogen coating material for electron emission based on photoelectric yield measurements during x-ray absorption studies
J. Vac. Sci. Technol. B 19, 1358–1365 (2001)
https://doi.org/10.1116/1.1378010
Secondary electron emission of MgO thin layers prepared by the spin coating method
J. Vac. Sci. Technol. B 19, 1366–1369 (2001)
https://doi.org/10.1116/1.1383079
High-voltage triode flat-panel display using field-emission nanotube-based thin films
J. Vac. Sci. Technol. B 19, 1370–1372 (2001)
https://doi.org/10.1116/1.1387451
Fabrication of gated niobium nitride field emitter array
J. Vac. Sci. Technol. B 19, 1373–1376 (2001)
https://doi.org/10.1116/1.1385913
Application of dichroic mirror for improvement of luminance and luminous efficacy in an alternating current plasma display cell
J. Vac. Sci. Technol. B 19, 1377–1380 (2001)
https://doi.org/10.1116/1.1379798
New plasma display panel packaging technology using electrostatic bonding method
Duck-Jung Lee; Jin-Wook Jeong; Young-Cho Kim; Yun-Hi Lee; Byeong-Kwon Ju; Tae-Seung Cho; Eun-Ha Choi; Jin Jang
J. Vac. Sci. Technol. B 19, 1381–1384 (2001)
https://doi.org/10.1116/1.1387461
BRIEF REPORTS AND COMMENTS
Conical etching and electrochemical metal replication of heavy-ion tracks in polymer foils
J. Vac. Sci. Technol. B 19, 1385–1387 (2001)
https://doi.org/10.1116/1.1381066
RAPID COMMUNICATIONS
GaN ablation etching by simultaneous irradiation with laser and KrF excimer laser
Toshimitsu Akane; Koji Sugioka; Kiyotaka Hammura; Yoshinobu Aoyagi; Katsumi Midorikawa; Kotaro Obata; Koichi Toyoda; Shintaro Nomura
J. Vac. Sci. Technol. B 19, 1388–1391 (2001)
https://doi.org/10.1116/1.1385683
PAPERS FROM THE 19TH NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY
NITRIDES
Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for photodiodes
David Gotthold; Sridhar Govindaraju; Jason Reifsnider; Geoff Kinsey; Joe Campbell; Archie Holmes, Jr.
J. Vac. Sci. Technol. B 19, 1400–1403 (2001)
https://doi.org/10.1116/1.1379792
Radio-frequency molecular-beam-epitaxy growth of III nitrides for microsensor applications
J. Vac. Sci. Technol. B 19, 1404–1408 (2001)
https://doi.org/10.1116/1.1386382
Gas source molecular beam epitaxy of high quality on Si(111)
S. Nikishin; G. Kipshidze; V. Kuryatkov; K. Choi; Ìu. Gherasoiu; L. Grave de Peralta; A. Zubrilov; V. Tretyakov; K. Copeland; T. Prokofyeva; M. Holtz; R. Asomoza; Yu. Kudryavtsev; H. Temkin
J. Vac. Sci. Technol. B 19, 1409–1412 (2001)
https://doi.org/10.1116/1.1377590
Gas-source molecular beam expitaxy of GaInNP/GaAs and a study of its band lineup
J. Vac. Sci. Technol. B 19, 1413–1416 (2001)
https://doi.org/10.1116/1.1381069
Faceting transition in epitaxial growth of dilute GaNAs films on GaAs
M. Adamcyk; S. Tixier; B. J. Ruck; J. H. Schmid; T. Tiedje; V. Fink; M. Jeffries; D. Karaiskaj; K. L. Kavanagh; M. Thewalt
J. Vac. Sci. Technol. B 19, 1417–1421 (2001)
https://doi.org/10.1116/1.1386379
Growth and characterization of GaInNAs/GaAs multiquantum wells
J. Vac. Sci. Technol. B 19, 1422–1425 (2001)
https://doi.org/10.1116/1.1374620
GaN grown by molecular beam epitaxy with antimony as surfactant
J. Vac. Sci. Technol. B 19, 1426–1428 (2001)
https://doi.org/10.1116/1.1374627
NOVEL MATERIALS
ZnO epilayers on GaN templates: Polarity control and valence-band offset
Soon-Ku Hong; Takashi Hanada; Hisao Makino; Hang-Ju Ko; Yefan Chen; Takafumi Yao; Akinori Tanaka; Hiroyuki Sasaki; Shigeru Sato; Daisuke Imai; Kiyaoki Araki; Makoto Shinohara
J. Vac. Sci. Technol. B 19, 1429–1433 (2001)
https://doi.org/10.1116/1.1374630
New phase formation of films on GaAs(100)
A. R. Kortan; M. Hong; J. Kwo; J. P. Mannaerts; J. J. Krajewski; N. Kopylov; C. Steiner; B. Bolliger; M. Erbudak
J. Vac. Sci. Technol. B 19, 1434–1438 (2001)
https://doi.org/10.1116/1.1387456
Growth and characterization of MnAs/ZnSe ferromagnet/semiconductor hybrid heterostructures
J. Vac. Sci. Technol. B 19, 1439–1442 (2001)
https://doi.org/10.1116/1.1376383
Molecular-beam-epitaxy growth and luminescence properties of thin films
J. Vac. Sci. Technol. B 19, 1443–1446 (2001)
https://doi.org/10.1116/1.1386378
Molecular beam epitaxial growth of IV–VI multiple quantum well structures on Si(111) and and optical studies of epilayer heating
H. Z. Wu; P. J. McCann; O. Alkhouli; X. M. Fang; D. McAlister; K. Namjou; N. Dai; S. J. Chung; P. H. O. Rappl
J. Vac. Sci. Technol. B 19, 1447–1454 (2001)
https://doi.org/10.1116/1.1385915
NANOSTRUCTURES
Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots
J. Vac. Sci. Technol. B 19, 1455–1458 (2001)
https://doi.org/10.1116/1.1374623
Formation and photoluminescence of stacked CdSe quantum dots grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 19, 1459–1462 (2001)
https://doi.org/10.1116/1.1388604
Self-assembled quantum dot transformations via anion exchange
J. Vac. Sci. Technol. B 19, 1463–1466 (2001)
https://doi.org/10.1116/1.1385916
Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots
J. Vac. Sci. Technol. B 19, 1467–1470 (2001)
https://doi.org/10.1116/1.1376381
Lateral correlation of InAs/AlInAs nanowire superlattices on InP(001)
J. Vac. Sci. Technol. B 19, 1471–1474 (2001)
https://doi.org/10.1116/1.1386383
Photoluminescence properties of self-assembled InAs quantum dots grown on InP substrates by solid source molecular beam epitaxy
J. Vac. Sci. Technol. B 19, 1475–1478 (2001)
https://doi.org/10.1116/1.1374626
II-VI
High reflectivity symmetrically strained -based distributed Bragg reflectors for current injection devices
J. Vac. Sci. Technol. B 19, 1479–1482 (2001)
https://doi.org/10.1116/1.1374625
Molecular beam epitaxy growth and characterization of layers on GaAs(100)
J. Vac. Sci. Technol. B 19, 1483–1487 (2001)
https://doi.org/10.1116/1.1383075
Electrical properties of in situ As doped epilayers grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 19, 1488–1491 (2001)
https://doi.org/10.1116/1.1374628
Photoluminescence from ZnTe:Yb films grown on (100) GaAs by molecular beam epitaxy
J. Vac. Sci. Technol. B 19, 1492–1496 (2001)
https://doi.org/10.1116/1.1377589
Determination of the indices of refraction of molecular-beam-epitaxy-grown ZnSe/ZnCdSe multiple-quantum-well structures
J. Vac. Sci. Technol. B 19, 1497–1500 (2001)
https://doi.org/10.1116/1.1386381
ANTIMONIDES
GaAs-substrate-based long-wave active materials with type-II band alignments
S. R. Johnson; S. Chaparro; J. Wang; N. Samal; Y. Cao; Z. B. Chen; C. Navarro; J. Xu; S. Q. Yu; David J. Smith; C.-Z. Guo; P. Dowd; W. Braun; Y.-H. Zhang
J. Vac. Sci. Technol. B 19, 1501–1504 (2001)
https://doi.org/10.1116/1.1386380
DEVICES
Metamorphic heterojunction bipolar transistors and photodiodes on GaAs substrates prepared by molecular beam epitaxy
W. E. Hoke; P. J. Lemonias; T. D. Kennedy; A. Torabi; E. K. Tong; R. J. Bourque; J.-H. Jang; G. Cueva; D. C. Dumka; I. Adesida; K. L. Chang; K. C. Hsieh
J. Vac. Sci. Technol. B 19, 1505–1509 (2001)
https://doi.org/10.1116/1.1374624
Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates
D. Lubyshev; W. K. Liu; T. R. Stewart; A. B. Cornfeld; X. M. Fang; X. Xu; P. Specht; C. Kisielowski; M. Naidenkova; M. S. Goorsky; C. S. Whelan; W. E. Hoke; P. F. Marsh; J. Mirecki Millunchick; S. P. Svensson
J. Vac. Sci. Technol. B 19, 1510–1514 (2001)
https://doi.org/10.1116/1.1376384
Electrical properties of molecular beam epitaxially grown and its application in InP-based high electron mobility transistors
J. Vac. Sci. Technol. B 19, 1529–1535 (2001)
https://doi.org/10.1116/1.1376382
Very-low-temperature molecular beam epitaxial growth of GaP/AlAs heterostructures for distributed Bragg reflector applications
J. Vac. Sci. Technol. B 19, 1536–1540 (2001)
https://doi.org/10.1116/1.1376385
GROWTH ISSUES
Combined silicon, beryllium, and carbon tetrabromide single-port dopant source for molecular-beam epitaxy
J. Vac. Sci. Technol. B 19, 1541–1545 (2001)
https://doi.org/10.1116/1.1378008
Improved interface abruptness in pseudomorphic InGaAs/AlGaAs quantum wells with superflat interfaces grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 19, 1546–1549 (2001)
https://doi.org/10.1116/1.1388602
Effect of growth rate on surface morphology of heavily carbon-doped InGaAs
J. Vac. Sci. Technol. B 19, 1550–1553 (2001)
https://doi.org/10.1116/1.1374622
Role of molecular beam epitaxy parameters on InGaAs surface roughness
J. Vac. Sci. Technol. B 19, 1558–1561 (2001)
https://doi.org/10.1116/1.1376386
Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 19, 1562–1566 (2001)
https://doi.org/10.1116/1.1377588
Effects of the substrate tilting angle on the molecular beam epitaxial growth of GaAs on Si(110)
J. Vac. Sci. Technol. B 19, 1567–1571 (2001)
https://doi.org/10.1116/1.1376387
IN SITU MONITORING
Metastability of InGaAs/GaAs probed by in situ optical stress sensor
J. Vac. Sci. Technol. B 19, 1572–1575 (2001)
https://doi.org/10.1116/1.1383077
In situ monitoring of molecular-beam-epitaxy grown by Fourier transform infrared spectroscopy
J. Vac. Sci. Technol. B 19, 1576–1579 (2001)
https://doi.org/10.1116/1.1387455
Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements
J. Vac. Sci. Technol. B 19, 1580–1584 (2001)
https://doi.org/10.1116/1.1374621
PAPERS FROM THE 28TH CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES
INTERFACE DEFECTS AND OXIDE FILMS
Surface passivation of GaAs using an ultrathin cubic GaN interface control layer
J. Vac. Sci. Technol. B 19, 1589–1596 (2001)
https://doi.org/10.1116/1.1388605
surface reconstruction
J. Vac. Sci. Technol. B 19, 1597–1605 (2001)
https://doi.org/10.1116/1.1387460
Electron traps at interfaces between Si(100) and noncrystalline and alloys
J. Vac. Sci. Technol. B 19, 1606–1610 (2001)
https://doi.org/10.1116/1.1388606
Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy
J. Vac. Sci. Technol. B 19, 1611–1618 (2001)
https://doi.org/10.1116/1.1387464
Silicon on GaN(0001) and surfaces
J. Vac. Sci. Technol. B 19, 1619–1625 (2001)
https://doi.org/10.1116/1.1383074
COMPOUND SEMICONDUCTOR INTERFACES: NITRIDES AND ANTIMONIDES
Effects of versus on InAs/GaSb heterostructures: As-for-Sb exchange and film stability
J. Vac. Sci. Technol. B 19, 1626–1630 (2001)
https://doi.org/10.1116/1.1386377
Transition to insulating behavior in the metal-semiconductor digital composite ErAs:InGaAs
J. Vac. Sci. Technol. B 19, 1631–1634 (2001)
https://doi.org/10.1116/1.1388211
Effects of Be on the II–VI/GaAs interface and on CdSe quantum dot formation
S. P. Guo; X. Zhou; O. Maksimov; M. C. Tamargo; C. Chi; A. Couzis; C. Maldarelli; Igor L. Kuskovsky; G. F. Neumark
J. Vac. Sci. Technol. B 19, 1635–1639 (2001)
https://doi.org/10.1116/1.1388209
Microscopic structure of spontaneously formed islands on the reconstructed surface
J. Vac. Sci. Technol. B 19, 1640–1643 (2001)
https://doi.org/10.1116/1.1386376
Distribution of nitrogen atoms in dilute GaAsN and InGaAsN alloys studied by scanning tunneling microscopy
J. Vac. Sci. Technol. B 19, 1644–1649 (2001)
https://doi.org/10.1116/1.1379967
NOVEL INTERFACE CHARACTERIZATION TECHNIQUES
Influence of anisotropic in-plane strain on critical point resonances in reflectance difference data
J. Vac. Sci. Technol. B 19, 1650–1657 (2001)
https://doi.org/10.1116/1.1388607
Optical anisotropy of organic layers on GaAs(001)
J. Vac. Sci. Technol. B 19, 1658–1661 (2001)
https://doi.org/10.1116/1.1387462
Calibrated scanning spreading resistance microscopy profiling of carriers in III–V structures
R. P. Lu; K. L. Kavanagh; St. J. Dixon-Warren; A. Kuhl; A. J. SpringThorpe; E. Griswold; G. Hillier; I. Calder; R. Arés; R. Streater
J. Vac. Sci. Technol. B 19, 1662–1670 (2001)
https://doi.org/10.1116/1.1387458
Quantitative analysis of nanoscale electronic properties in an heterostructure field-effect transistor structure
J. Vac. Sci. Technol. B 19, 1671–1674 (2001)
https://doi.org/10.1116/1.1385914
Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures
J. Vac. Sci. Technol. B 19, 1675–1681 (2001)
https://doi.org/10.1116/1.1383078
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry
Shiva Mudide, Nick Keller, et al.