Skip Nav Destination

Issues

Select Year

Issue

REGULAR ARTICLES

Enhanced diffusion as a mechanism for ion-induced damage propagation in GaN

E. D. Haberer; C. H. Chen; M. Hansen; S. Keller; S. P. DenBaars; U. K. Mishra; E. L. Hu

J. Vac. Sci. Technol. B 19, 603–608 (2001) https://doi.org/10.1116/1.1362684

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electrical properties of Pd-based ohmic contact to p-GaN

Dae-Woo Kim; Jun Cheol Bae; Woo Jin Kim; Hong Koo Baik; Sung-Man Lee

J. Vac. Sci. Technol. B 19, 609–614 (2001) https://doi.org/10.1116/1.1372922

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Surface states on n-type ${Al}_{0.24} {Ga}_{0.76} As$ characterized by deep-level transient spectroscopy

K. J. Choi; J.-L. Lee

J. Vac. Sci. Technol. B 19, 615–621 (2001) https://doi.org/10.1116/1.1368679

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Raman study of luminescent spark processed porous GaAs

M. Rojas-López; J. M. Gracia-Jiménez; M. A. Vidal; H. Navarro-Contreras; R. Silva-González; E. Gómez

J. Vac. Sci. Technol. B 19, 622–627 (2001) https://doi.org/10.1116/1.1366709

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Technique employing gold nanospheres to study defect evolution in thin films

P. B. Mirkarimi; S. L. Baker; D. G. Stearns

J. Vac. Sci. Technol. B 19, 628–633 (2001) https://doi.org/10.1116/1.1364702

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Molecular dynamics study of the interactions of small thermal and energetic silicon clusters with crystalline and amorphous silicon surfaces

Shyam Ramalingam; Eray S. Aydil; Dimitrios Maroudas

J. Vac. Sci. Technol. B 19, 634–644 (2001) https://doi.org/10.1116/1.1362682

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Study on dark specific resistance of ${Au–TiO}_{2}$ nanogranular films

Huiyao Wang; Pei Xu; Tianmin Wang

J. Vac. Sci. Technol. B 19, 645–648 (2001) https://doi.org/10.1116/1.1366710

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Formation of Si–Si bonds and precipitation of Si nanocrystals in vacuum-ultraviolet-irradiated $a- {SiO}_{2}$ films

Housei Akazawa

J. Vac. Sci. Technol. B 19, 649–658 (2001) https://doi.org/10.1116/1.1368674

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Field-based scanning tunneling microscope manipulation of antimony dimers on Si(001)

S. Rogge; R. H. Timmerman; P. M. L. O. Scholte; L. J. Geerligs; H. W. M. Salemink

J. Vac. Sci. Technol. B 19, 659–665 (2001) https://doi.org/10.1116/1.1372925

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Nanowearing property of a fatigued polycarbonate surface studied by atomic force microscopy

Futoshi Iwata; Yuichiro Suzuki; Yoshitaka Moriki; Syunsuke Koike; Akira Sasaki

J. Vac. Sci. Technol. B 19, 666–670 (2001) https://doi.org/10.1116/1.1370173

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Growth and structure of aligned B–C–N nanotubes

J. Yu; Q. Zhang; J. Ahn; S. F. Yoon; Rusli; B. Gan; K. Chew; K. H. Tan; X. D. Bai; E. G. Wang

J. Vac. Sci. Technol. B 19, 671–674 (2001) https://doi.org/10.1116/1.1371316

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Scanning field-emission force microscopy and spectroscopy of chemical-vapor-deposited carbon field-emission cathodes

Takahito Inoue; D. Frank Ogletree; Miquel Salmeron

J. Vac. Sci. Technol. B 19, 675–682 (2001) https://doi.org/10.1116/1.1370172

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Triple-junction issues in field emission displays

Xianyun Ma; T. S. Sudarshan

J. Vac. Sci. Technol. B 19, 683–686 (2001) https://doi.org/10.1116/1.1375823

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effects of post-treatment of MgO on the discharge characteristics of an alternating current plasma display panel

Joong-Kyun Kim; Kyung-Sup Moon; Ki-Woong Whang; Ji-Hwa Lee

J. Vac. Sci. Technol. B 19, 687–691 (2001) https://doi.org/10.1116/1.1372921

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Selective ultrahigh vacuum dry etching process for ZnSe-based II–VI semiconductors

M. Legge; G. Bacher; S. Bader; T. Kümmell; A. Forchel; J. Nürnberger; C. Schumacher; W. Faschinger; G. Landwehr

J. Vac. Sci. Technol. B 19, 692–694 (2001) https://doi.org/10.1116/1.1372923

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Time-dependent Si etch behavior and its effect on oxide/Si selectivity in ${CF}_{4} + D_{2}$ electron cyclotron resonance plasma etching

Kyungjin Min; H. Henry Lamb; John R. Hauser

J. Vac. Sci. Technol. B 19, 695–700 (2001) https://doi.org/10.1116/1.1371318

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Level set approach to simulation of feature profile evolution in a high-density plasma-etching system

Y. H. Im; Y. B. Hahn; S. J. Pearton

J. Vac. Sci. Technol. B 19, 701–710 (2001) https://doi.org/10.1116/1.1370174

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Plasma etch profiles of passivated open-area trenches

Barbara Abraham-Shrauner

J. Vac. Sci. Technol. B 19, 711–721 (2001) https://doi.org/10.1116/1.1371319

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Formation of metallic surface structures by ion etching using a S-layer template

M. Panhorst; H. Brückl; B. Kiefer; G. Reiss; U. Santarius; R. Guckenberger

J. Vac. Sci. Technol. B 19, 722–724 (2001) https://doi.org/10.1116/1.1364699

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effects of gas pressure and substrate temperature on the etching of parylene-N using a remote microwave oxygen plasma

Russell R. A. Callahan; Gregory B. Raupp; Stephen P. Beaudoin

J. Vac. Sci. Technol. B 19, 725–731 (2001) https://doi.org/10.1116/1.1366707

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Exposure characteristics and three-dimensional profiling of SU8C resist using electron beam lithography

W. H. Wong; E. Y. B. Pun

J. Vac. Sci. Technol. B 19, 732–735 (2001) https://doi.org/10.1116/1.1368678

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Photoinduced outgassing from the resist for extreme ultraviolet lithography by the analysis of mass spectroscopy

Takeo Watanabe; Hiroo Kinoshita; Hajime Nii; Kazuhiro Hamamoto; Harushige Tsubakino; Hideo Hada; Hiroshi Komano; Shigeo Irie

J. Vac. Sci. Technol. B 19, 736–742 (2001) https://doi.org/10.1116/1.1368671

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Resist hardening by fluorocarbon plasma for electron-beam and optical mix-and-match lithography

Victor W. C. Chan; C. H. Hai; Philip C. H. Chan

J. Vac. Sci. Technol. B 19, 743–748 (2001) https://doi.org/10.1116/1.1364700

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Ion channeling effects on the focused ion beam milling of Cu

B. W. Kempshall; S. M. Schwarz; B. I. Prenitzer; L. A. Giannuzzi; R. B. Irwin; F. A. Stevie

J. Vac. Sci. Technol. B 19, 749–754 (2001) https://doi.org/10.1116/1.1368670

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Preparation of site specific transmission electron microscopy plan-view specimens using a focused ion beam system

R. M. Langford; Y. Z. Huang; S. Lozano-Perez; J. M. Titchmarsh; A. K. Petford-Long

J. Vac. Sci. Technol. B 19, 755–758 (2001) https://doi.org/10.1116/1.1371317

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Selective chemical vapor deposition of copper on AZ 5214™-patterned silicon substrates

D. Davazoglou; S. Vidal; A. Gleizes

J. Vac. Sci. Technol. B 19, 759–761 (2001) https://doi.org/10.1116/1.1362680

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Recrystallization effects in Cu electrodeposits used in fine line damascene structures

Qing-Tang Jiang; Michael E. Thomas

J. Vac. Sci. Technol. B 19, 762–766 (2001) https://doi.org/10.1116/1.1366708

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper

Shih-Chieh Chang; Jia-Min Shieh; Kun-Cheng Lin; Bau-Tong Dai; Ting-Chun Wang; Chia-Fu Chen; Ming-Shiann Feng; Ying-Hao Li; Chih-Peng Lu

J. Vac. Sci. Technol. B 19, 767–773 (2001) https://doi.org/10.1116/1.1368673

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Integration and electrical characterization of photosensitive polyimide

T. L. Alford; Y. L. Zou; Kaustubh S. Gadre; C. King; W. Chen; N. David Theodore

J. Vac. Sci. Technol. B 19, 774–779 (2001) https://doi.org/10.1116/1.1364703

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Characteristics of fluorinated amorphous carbon films and implementation of 0.15 μm $Cu /a- C:F$ damascene interconnection

Jia-Min Shieh; Shich-Chang Suen; Kou-Chiang Tsai; Bau-Tong Dai; Yew-Chung Wu; Yu-Hen Wu

J. Vac. Sci. Technol. B 19, 780–787 (2001) https://doi.org/10.1116/1.1362683

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effect of thinning a ${WSiN/WSi}_{x}$ barrier layer on its barrier capability

Akihiko Hirata; Tomohiko Maeda; Katsuyuki Machida; Masahiko Maeda; Kanji Yasui; Hakaru Kyuragi

J. Vac. Sci. Technol. B 19, 788–793 (2001) https://doi.org/10.1116/1.1368681

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electric property improvement and boron penetration suppression in metal–oxide–Si capacitors by amorphous-Si gate electrode and two-step nitridation

Jung Hsiang Lee; Wu Shiung Feng; Tzann-Cherng Juang; Kuei-Shu Chang-Liao

J. Vac. Sci. Technol. B 19, 794–799 (2001) https://doi.org/10.1116/1.1366706

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Nitrided thermal ${SiO}_{2}$ for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal–oxide–semiconductor field effect transistor

Shibly S. Ahmed; John P. Denton; Gerold W. Neudeck

J. Vac. Sci. Technol. B 19, 800–806 (2001) https://doi.org/10.1116/1.1364698

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Mechanically controllable break junctions with quasi-planar electrodes

O. Y. Kolesnychenko; E. Jurdik; O. I. Shklyarevskii; H. van Kempen

J. Vac. Sci. Technol. B 19, 807–811 (2001) https://doi.org/10.1116/1.1373637

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Integration of piezoelectric ${(Pb, La)TiO}_{3}$ on (100)InP by using a ${CeO}_{2}$ buffer layer

E. Vasco; L. Vázquez; C. Zaldo; C. Coya; A. Kling; J. C. Soares

J. Vac. Sci. Technol. B 19, 812–817 (2001) https://doi.org/10.1116/1.1370177

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy

Jungwon Woo; Seungbum Hong; Nava Setter; Hyunjung Shin; Jong-Up Jeon; Y. Eugene Pak; Kwangsoo No

J. Vac. Sci. Technol. B 19, 818–824 (2001) https://doi.org/10.1116/1.1364697

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Gas sensing properties of copper gate metal–oxide–semiconductor capacitors

D. Filippini; R. Aragón; U. Weimar

J. Vac. Sci. Technol. B 19, 825–828 (2001) https://doi.org/10.1116/1.1372924

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effects of oxygen flooding on crater bottom composition and roughness in ultrashallow secondary ion mass spectrometry depth profiling

C. M. Ng; A. T. S. Wee; C. H. A. Huan; A. See

J. Vac. Sci. Technol. B 19, 829–835 (2001) https://doi.org/10.1116/1.1368680

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Secondary-ion-mass spectrometry and high-resolution x-ray diffraction analyses of GaSb–AlGaSb heterostructures grown by molecular beam epitaxy

C. Gerardi; C. Giannini; L. De Caro; L. Tapfer; Y. Rouillard; B. Jenichen; L. Däweritz; K. H. Ploog

J. Vac. Sci. Technol. B 19, 836–842 (2001) https://doi.org/10.1116/1.1372926

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Influence of the microchannel plate and anode gap parameters on the spatial resolution of an image intensifier

T. H. Hoenderken; C. W. Hagen; J. E. Barth; P. Kruit; G. O. Nützel

J. Vac. Sci. Technol. B 19, 843–850 (2001) https://doi.org/10.1116/1.1364701

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

BRIEF REPORTS AND COMMENTS

Incorporation of polyhedral oligosilsesquioxane in chemically amplified resists to improve their reactive ion etching resistance

Hengpeng Wu; Yongqi Hu; Kenneth E. Gonsalves; Miguel Jose Yacaman

J. Vac. Sci. Technol. B 19, 851–855 (2001) https://doi.org/10.1116/1.1368672

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

RAPID COMMUNICATIONS

Effect of the Ti-underlayer microstructure on the texture of Al thin films

Sehoon Yoo; Young-Ho Kim; Chong Seung Yoon

J. Vac. Sci. Technol. B 19, 856–858 (2001) https://doi.org/10.1116/1.1362681

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

PAPERS FROM THE 13TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE

APPLICATIONS

Use of microfabricated cold field emitters in sub-100 nm maskless lithography

G. X. Guo; K. Tokunaga; E. Yin; F. C. Tsai; A. D. Brodie; N. W. Parker

J. Vac. Sci. Technol. B 19, 862–865 (2001) https://doi.org/10.1116/1.1360178

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Secondary electron emission characteristics for sol–gel based ${SiO}_{2}$ thin films

Taewon Jeong; Jeonghee Lee; SeGi Yu; Sunghwan Jin; Jungna Heo; Whikun Yi; D. Jeon; J. M. Kim

J. Vac. Sci. Technol. B 19, 866–869 (2001) https://doi.org/10.1116/1.1373640

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Improved performance of nonevaporable getter activated by a continuous wave infrared laser

S. N. Cha; J. Y. Choung; B. G. Song; J. M. Choi; I. T. Han; N. S. Park; J. E. Jung; N. S. Lee; J. M. Kim; J. K. Chee; J. P. Hong

J. Vac. Sci. Technol. B 19, 870–873 (2001) https://doi.org/10.1116/1.1371016

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Pressure change characteristics of a field emission display panel in operation

J. Y. Oh; K. J. Woo; K. S. Kim; D. Y. Lee; J. O. Choi

J. Vac. Sci. Technol. B 19, 874–876 (2001) https://doi.org/10.1116/1.1370176

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

FE CHARACTERIZATION

Review of synthesis of low-work function Cu–Li alloy coatings and characterization of the field emission properties for application to field emission devices

O. Auciello; J. C. Tucek; A. R. Krauss; D. M. Gruen; N. Moldovan; D. C. Mancini

J. Vac. Sci. Technol. B 19, 877–883 (2001) https://doi.org/10.1116/1.1375825

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electron field emission characteristics of textured silicon surface

Y. M. Fung; W. Y. Cheung; I. H. Wilson; Dihu Chen; J. B. Xu; S. P. Wong; R. W. M. Kwok

J. Vac. Sci. Technol. B 19, 884–887 (2001) https://doi.org/10.1116/1.1361040

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effects of color phosphors on the lifetime of field emission carbon thin films

L. H. Thuesen

J. Vac. Sci. Technol. B 19, 888–891 (2001) https://doi.org/10.1116/1.1375819

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Focusing properties of dual-gate field emitters

Dan Nicolaescu; Valeriu Filip; Junji Itoh

J. Vac. Sci. Technol. B 19, 892–896 (2001) https://doi.org/10.1116/1.1356063

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

MICROFABRICATION AND TIP ARRAYS

Mold-type field-emission array fabrication by the use of fast silicon etching

Jan Dziuban; Anna Górecka-Drzazga

J. Vac. Sci. Technol. B 19, 897–899 (2001) https://doi.org/10.1116/1.1373639

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

100 nm gate hole openings for low voltage driving field emission display applications

J. O. Choi; A. I. Akinwande; H. I. Smith

J. Vac. Sci. Technol. B 19, 900–903 (2001) https://doi.org/10.1116/1.1375821

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Wedge emitter fabrication using focused ion beam

C. Ochiai; A. Sawada; H. Noriyasu; M. Takai; A. Hosono; S. Okuda

J. Vac. Sci. Technol. B 19, 904–906 (2001) https://doi.org/10.1116/1.1349734

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Performance improvement of gated silicon field emitters with a thin layer of boron nitride

H. Busta; D. Furst; R. Pryor; Lihua Li

J. Vac. Sci. Technol. B 19, 907–911 (2001) https://doi.org/10.1116/1.1370179

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Emission characteristics of Spindt-type platinum field emitters improved by operation in carbon monoxide ambient

Y. Gotoh; D. Nozaki; H. Tsuji; J. Ishikawa; T. Nakatani; T. Sakashita; K. Betsui

J. Vac. Sci. Technol. B 19, 912–915 (2001) https://doi.org/10.1116/1.1376392

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Fabrication and electrical characterization of high aspect ratio silicon field emitter arrays

I. W. Rangelow; St. Biehl

J. Vac. Sci. Technol. B 19, 916–919 (2001) https://doi.org/10.1116/1.1371018

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Damageless vacuum sealing of Si field emitters with ${CHF}_{3}$ plasma treatment

M. Nagao; T. Matsukawa; S. Kanemaru; J. Itoh; H. Tanabe

J. Vac. Sci. Technol. B 19, 920–924 (2001) https://doi.org/10.1116/1.1364696

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Novel method for the formation of an aluminum parting layer in the fabrication of field emitter arrays

Seung-Youl Kang; Moon Youn Jung; Chi-Sun Hwang; Young-Rae Cho; Yoon-Ho Song; Sang-Kyun Lee; Jin Ho Lee; Kyoung-Ik Cho

J. Vac. Sci. Technol. B 19, 925–928 (2001) https://doi.org/10.1116/1.1350837

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Novel resistive layer structure using via holes of an insulating interdielectric as a current path

J. K. Ha; B. H. Chung; S. Y. Han; J. O. Choi; H. G. Kim

J. Vac. Sci. Technol. B 19, 929–932 (2001) https://doi.org/10.1116/1.1372920

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Fabrication process of field emitter arrays using focused ion and electron beam induced reaction

C. Ochiai; O. Yavas; M. Takai; A. Hosono; S. Okuda

J. Vac. Sci. Technol. B 19, 933–935 (2001) https://doi.org/10.1116/1.1349205

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

DIAMOND I

Recent development of diamond microtip field emitter cathodes and devices

W. P. Kang; J. L. Davidson; A. Wisitsora-at; D. V. Kerns; S. Kerns

J. Vac. Sci. Technol. B 19, 936–941 (2001) https://doi.org/10.1116/1.1368667

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Microscopic field emission investigation of nanodiamond and AlN coated Si tips

B. Günther; A. Göhl; G. Müller; E. Givargizov; L. Zadorozhnaya; A. Stepanova; B. Spitsyn; A. N. Blaut-Bachev; B. Seleznev; N. Suetin

J. Vac. Sci. Technol. B 19, 942–945 (2001) https://doi.org/10.1116/1.1370178

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Field electron emission from patterned nanostructured carbon films on sodalime glass substrates

Kyung Ho Park; Kyung Moon Lee; Seungho Choi; Soonil Lee; Ken Ha Koh

J. Vac. Sci. Technol. B 19, 946–949 (2001) https://doi.org/10.1116/1.1373641

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Field emission from heat-treated cobalt-containing amorphous carbon composite films on glass substrate

Y. J. Li; S. P. Lau; B. K. Tay; Z. Sun; G. Y. Chen; J. S. Chen; X. Z. Ding

J. Vac. Sci. Technol. B 19, 950–953 (2001) https://doi.org/10.1116/1.1372918

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Fabrication of triode diamond field emitter arrays on glass substrate by anisotropic conductive film bonding

Jong Duk Lee; Euo Sik Cho; Sang Jik Kwon

J. Vac. Sci. Technol. B 19, 954–957 (2001) https://doi.org/10.1116/1.1361039

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Stable and uniform electron emission from nanostructured carbon films

Kyung Ho Park; Seungho Choi; Kyung Moon Lee; Soonil Lee; Ken Ha Koh

J. Vac. Sci. Technol. B 19, 958–961 (2001) https://doi.org/10.1116/1.1360177

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

DIAMOND II

Electron emission from nanocrystalline diamond films

Changzhi Gu; Xin Jiang; Zengsun Jin; Weibiao Wang

J. Vac. Sci. Technol. B 19, 962–964 (2001) https://doi.org/10.1116/1.1372919

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Low-field electron emission of diamond/pyrocarbon composites

A. V. Karabutov; V. D. Frolov; V. I. Konov; V. G. Ralchenko; S. K. Gordeev; P. I. Belobrov

J. Vac. Sci. Technol. B 19, 965–970 (2001) https://doi.org/10.1116/1.1368669

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

DIAMOND

Diamond emitter arrays with uniform self-aligned gate built from silicon-on-insulator wafer

A. Wisitsora-at; W. P. Kang; J. L. Davidson; D. V. Kerns; S. E. Kerns

J. Vac. Sci. Technol. B 19, 971–974 (2001) https://doi.org/10.1116/1.1370175

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electron field emission properties of nanodiamonds synthesized by the chemical vapor deposition process

Yu-Che Yu; Jin-Hua Huang; I-Nan Lin

J. Vac. Sci. Technol. B 19, 975–979 (2001) https://doi.org/10.1116/1.1349207

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

FE FUNDAMENTALS

Field emission current cleaning and annealing of microfabricated cold cathodes

P. R. Schwoebel; C. A. Spindt; C. E. Holland; J. A. Panitz

J. Vac. Sci. Technol. B 19, 980–987 (2001) https://doi.org/10.1116/1.1349206

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Field emitters for space application

S. E. Huq; B. J. Kent; R. Stevens; R. A. Lawes; N. S. Xu; J. C. She

J. Vac. Sci. Technol. B 19, 988–991 (2001) https://doi.org/10.1116/1.1366705

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Relationship between work function and current fluctuation of field emitters: Use of SK chart for evaluation of work function

Y. Gotoh; H. Tsuji; J. Ishikawa

J. Vac. Sci. Technol. B 19, 992–994 (2001) https://doi.org/10.1116/1.1350836

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Analytic expression of the average energy of the field electrons from the n-type semiconductors

Moon S. Chung; Byung-G. Yoon; Hyun S. Seo; Paul H. Cutler; Nicholas M. Miskovsky

J. Vac. Sci. Technol. B 19, 995–998 (2001) https://doi.org/10.1116/1.1360179

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

PHOSPHORS

Effects of the field emission display panel sealing process on the cathodoluminescence properties of phosphor screen

Z. M. Park; D. Y. Jeon; Y. W. Jin; S. N. Cha; J. M. Kim

J. Vac. Sci. Technol. B 19, 999–1003 (2001) https://doi.org/10.1116/1.1354981

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

ZnO:Zn phosphor thin films prepared by filtered arc deposition

Wei Li; Dongsheng Mao; Fumin Zhang; Xi Wang; Xianghuai Liu; Shichang Zou; Yukun Zhu; Qiong Li; Jingfang Xu

J. Vac. Sci. Technol. B 19, 1004–1007 (2001) https://doi.org/10.1116/1.1371019

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Luminescence characteristics of green phosphors with dwell times for field emission display design

J. E. Jang; J. W. Kim; S. J. Lee; N. H. Kwon; Y. W. Jin; S. H. Park; J. E. Jung; N. S. Lee; J. M. Kim

J. Vac. Sci. Technol. B 19, 1008–1011 (2001) https://doi.org/10.1116/1.1371015

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

CARBON NANOTUBES

Patterning technology of carbon nanotubes for field emission displays

Young-Rae Cho; Jin Ho Lee; Yoon-Ho Song; Seung-Youl Kang; Moon-Youn Jung; Chi-Sun Hwang; Kyoung Ik Cho

J. Vac. Sci. Technol. B 19, 1012–1015 (2001) https://doi.org/10.1116/1.1373638

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Modeling of the electron field emission from carbon nanotubes

V. Filip; D. Nicolaescu; F. Okuyama

J. Vac. Sci. Technol. B 19, 1016–1022 (2001) https://doi.org/10.1116/1.1349202

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Numerical indicator field emission display using carbon nanotubes as emitters

Jon-Lian Kwo; Meiso Yokoyama; Cheng-Chung Lee; Feng-Yu Chuang; I-Nan Lin

J. Vac. Sci. Technol. B 19, 1023–1025 (2001) https://doi.org/10.1116/1.1375822

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Effect of catalyst on growth behavior of carbon nanotube synthesizing by microwave heating thermal chemical vapor deposition process

Shi-Cheng Chen; Liang-Yuan Shih; Yu-Chen Chang; George-C Tu; I-Nan Lin

J. Vac. Sci. Technol. B 19, 1026–1029 (2001) https://doi.org/10.1116/1.1375818

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Microwave-assisted chemical vapor deposition process for synthesizing carbon nanotubes

Teng-Fan Kuo; Zhen-Yu Juang; Chuen-Horng Tsai; You-Ming Tsau; Hsiu-Fung Cheng; I-Nan Lin

J. Vac. Sci. Technol. B 19, 1030–1033 (2001) https://doi.org/10.1116/1.1352722

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electron field emission properties of pulsed laser deposited carbon films containing carbon nanotubes

Ming-Ray Chiang; Kuo-Shung Liu; Tzai-Shin Lai; Chun-Horng Tsai; Hsiu-Fung Cheng; I-Nan Lin

J. Vac. Sci. Technol. B 19, 1034–1039 (2001) https://doi.org/10.1116/1.1349204

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Characteristics of carbon nanowires synthesized by local arc-discharging technique

Jon-Lian Kwo; Meiso Yokoyama; I-Nan Lin

J. Vac. Sci. Technol. B 19, 1040–1043 (2001) https://doi.org/10.1116/1.1375824

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

NOVEL DEVICES AND MATERIALS

Recent progress in the characterization of electron emission from solid-state field-controlled emitters

Vu Thien Binh; V. Semet; J. P. Dupin; D. Guillot

J. Vac. Sci. Technol. B 19, 1044–1050 (2001) https://doi.org/10.1116/1.1375820

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Field emission characteristics of boron nitride films deposited on Si substrates with cubic boron nitride crystal grains

Chiharu Kimura; Tomohide Yamamoto; Takashi Sugino

J. Vac. Sci. Technol. B 19, 1051–1054 (2001) https://doi.org/10.1116/1.1361042

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage

Jae-Hoon Lee; Myoung-Bok Lee; Sung-Ho Hahm; Hyun-Chul Choi; Jong-Hyun Lee; Jung-Hee Lee; Jin-Sup Kim; Kyu-Man Choi; Chang-Auck Choi

J. Vac. Sci. Technol. B 19, 1055–1058 (2001) https://doi.org/10.1116/1.1371017

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Theoretical study of the threshold field for field electron emission from amorphous diamond thin films

N. S. Xu; J. C. She; S. E. Huq; S. Z. Deng; J. Chen

J. Vac. Sci. Technol. B 19, 1059–1063 (2001) https://doi.org/10.1116/1.1352721

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Robust high current field emitter tips and arrays for vacuum microelectronics devices

F. M. Charbonnier; W. A. Mackie; R. L. Hartman; Tianbao Xie

J. Vac. Sci. Technol. B 19, 1064–1072 (2001) https://doi.org/10.1116/1.1349203

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Electron emission from silicon tips coated with sol-gel $({Ba}_{0.67} {Sr}_{0.33}) Ti O_{3}$ ferroelectric thin film

W. P. Kang; A. Wisitsora-at; J. L. Davidson; O. K. Tan; W. G. Zhu; Q. Li; J. F. Xu

J. Vac. Sci. Technol. B 19, 1073–1076 (2001) https://doi.org/10.1116/1.1343095

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Simulation of planar deflection systems for field emission devices

Zheng Cui

J. Vac. Sci. Technol. B 19, 1077–1081 (2001) https://doi.org/10.1116/1.1361041

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Pulsed laser deposition of zinc oxide luminescent thin films

Jue Wei; Binglin Zhang; Ning Yao; Xiaoping Wang; Huizhong Ma; Shiming Wang

J. Vac. Sci. Technol. B 19, 1082–1084 (2001) https://doi.org/10.1116/1.1368668

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Heterojunction based on polyacetylene and its photocurrent density

Liu Pengyi; Ye Hai

J. Vac. Sci. Technol. B 19, 1085–1086 (2001) https://doi.org/10.1116/1.1373642

Abstract

View articletitled, SCM.SharedControls.Infrastructure.TitleDisplayModel?.Text

Open the PDF for in another window

Issues

REGULAR ARTICLES

BRIEF REPORTS AND COMMENTS

RAPID COMMUNICATIONS

PAPERS FROM THE 13TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE

APPLICATIONS

FE CHARACTERIZATION

MICROFABRICATION AND TIP ARRAYS

DIAMOND I

DIAMOND II

DIAMOND

FE FUNDAMENTALS

PHOSPHORS

CARBON NANOTUBES

NOVEL DEVICES AND MATERIALS

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only