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Issues

Volume 18, Issue 6
November 2000
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Cover Image for Volume 18, Issue 6
All Issues
ISSN 1071-1023
EISSN 1520-8567

REGULAR ARTICLES

Growth of low-defect density In0.25Ga0.75As on GaAs by molecular beam epitaxy
G. W. Pickrell; K. L. Chang; J. H. Epple; K. Y. Cheng; K. C. Hsieh
J. Vac. Sci. Technol. B 18, 2611–2614 (2000) https://doi.org/10.1116/1.1322040
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Investigation of mesa-sidewall effects on direct current and radio frequency characteristics of Ga0.51In0.49P/In0.15Ga0.85As/Ga0.51In0.49P pseudomorphic high electron mobility transistors
Chih-Hung Yen; Kuan-Po Lin; Kuo-Hui Yu; Wen-Lung Chang; Kun-Wei Lin; Wen-Chau Liu
J. Vac. Sci. Technol. B 18, 2615–2619 (2000) https://doi.org/10.1116/1.1322047
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Diode structures based on p-GaN for optoelectronic applications in the near-ultraviolet range of the spectrum
D. Starikov; I. Berishev; J.-W. Um; N. Badi; N. Medelci; A. Tempez; A. Bensaoula
J. Vac. Sci. Technol. B 18, 2620–2623 (2000) https://doi.org/10.1116/1.1326943
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Study of current leakage in InAs p–i–n photodetectors
Ray-Ming Lin; Shiang-Feng Tang; C. H. Kuan
J. Vac. Sci. Technol. B 18, 2624–2626 (2000) https://doi.org/10.1116/1.1319693
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Low temperature deposition for high performance photodetector
Lili He
J. Vac. Sci. Technol. B 18, 2627–2630 (2000) https://doi.org/10.1116/1.1320802
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Effect of growth interruption and the introduction of H2 on the growth of InGaN/GaN multiple quantum wells
Yong-Tae Moon; Dong-Joon Kim; Keun-Man Song; Dong-Wan Kim; Min-Su Yi; Do-Young Noh; Seong-Ju Park
J. Vac. Sci. Technol. B 18, 2631–2634 (2000) https://doi.org/10.1116/1.1327298
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Site control of InAs quantum dots on GaAs surfaces patterned by in situ electron-beam lithography
T. Ishikawa; S. Kohmoto; S. Nishikawa; T. Nishimura; K. Asakawa
J. Vac. Sci. Technol. B 18, 2635–2639 (2000) https://doi.org/10.1116/1.1322039
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Fabrication technology of a Si nanowire memory transistor using an inorganic electron beam resist process
Toshiyuki Tsutsumi; Kenichi Ishii; Hiroshi Hiroshima; Sukti Hazra; Mitsuyuki Yamanaka; Isao Sakata; Hirohisa Taguchi; Eiichi Suzuki; Kazutaka Tomizawa
J. Vac. Sci. Technol. B 18, 2640–2645 (2000) https://doi.org/10.1116/1.1314373
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Deposition of Fe clusters on Si surfaces
M. D. Upward; B. N. Cotier; P. Moriarty; P. H. Beton; S. H. Baker; C. Binns; K. Edmonds
J. Vac. Sci. Technol. B 18, 2646–2649 (2000) https://doi.org/10.1116/1.1320808
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Initial growth analysis of Si overlayers on cerium oxide layers
Chong Geol Kim
J. Vac. Sci. Technol. B 18, 2650–2652 (2000) https://doi.org/10.1116/1.1319697
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Electrical properties of self-organized nanostructures of alkanethiol-encapsulated gold particles
Shujuan Huang; Gen Tsutsui; Hiroyuki Sakaue; Shoso Shingubara; Takayuki Takahagi
J. Vac. Sci. Technol. B 18, 2653–2657 (2000) https://doi.org/10.1116/1.1318190
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Atomic force microscopy of reaction of ammonia gas with crystalline substituted benzoic acid
Qingdao Zeng; Chen Wang; Chunli Bai; Yan Li; Xinjian Yan
J. Vac. Sci. Technol. B 18, 2658–2663 (2000) https://doi.org/10.1116/1.1314372
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Effect of photoenhanced minority carriers in metal-oxide-semiconductor capacitor studied by scanning capacitance microscopy
S. Shin; J.-I. Kye; U. H. Pi; Z. G. Khim; J. W. Hong; Sang-il Park; S. Yoon
J. Vac. Sci. Technol. B 18, 2664–2668 (2000) https://doi.org/10.1116/1.1326947
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Integrated atomic force microscopy array probe with metal–oxide–semiconductor field effect transistor stress sensor, thermal bimorph actuator, and on-chip complementary metal–oxide–semiconductor electronics
T. Akiyama; U. Staufer; N. F. de Rooij; D. Lange; C. Hagleitner; O. Brand; H. Baltes; A. Tonin; H. R. Hidber
J. Vac. Sci. Technol. B 18, 2669–2675 (2000) https://doi.org/10.1116/1.1327299
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X-ray source combined ultrahigh-vacuum scanning tunneling microscopy for elemental analysis
Y. Hasegawa; K. Tsuji; K. Nakayama; K. Wagatsuma; T. Sakurai
J. Vac. Sci. Technol. B 18, 2676–2680 (2000) https://doi.org/10.1116/1.1318189
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New method for imaging atoms
Juying Dou; Ergang Chen; Changchun Zhu; Deqing Yang
J. Vac. Sci. Technol. B 18, 2681–2683 (2000) https://doi.org/10.1116/1.1318191
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Dual tunneling-unit scanning tunneling microscope for practical length measurement based on reference scales
Haijun Zhang; Lan Wu; Feng Huang; Shuwen Cheng
J. Vac. Sci. Technol. B 18, 2684–2687 (2000) https://doi.org/10.1116/1.1319696
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Effect of metal–insulator–semiconductor structure derived space charge field on the tip vibration signal in electrostatic force microscopy
Seungbum Hong; Jungwon Woo; Hyunjung Shin; Eunah Kim; Keun-Ho Kim; Jong Up Jeon; Y. Eugene Pak; Kwangsoo No
J. Vac. Sci. Technol. B 18, 2688–2691 (2000) https://doi.org/10.1116/1.1323968
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Wide dynamic range silicon diaphragm vacuum sensor by electrostatic servo system
Haruzo Miyashita; Masayoshi Esashi
J. Vac. Sci. Technol. B 18, 2692–2697 (2000) https://doi.org/10.1116/1.1320807
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Field emission properties of nanocomposite carbon nitride films
I. Alexandrou; M. Baxendale; N. L. Rupesinghe; G. A. J. Amaratunga; C. J. Kiely
J. Vac. Sci. Technol. B 18, 2698–2703 (2000) https://doi.org/10.1116/1.1322043
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Study of the emission performance of carbon nanotubes
Lei Wei; Wang Baoping; Tong Linsu; Yin Hanchun; Tu Yan; Zhu Changchun
J. Vac. Sci. Technol. B 18, 2704–2709 (2000) https://doi.org/10.1116/1.1319692
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Influence of diamond film thickness on field emission characteristics
H. Ji; Z. S. Jin; C. Z. Gu; J. Y. Wang; X. Y. Lu; B. B. Liu; C. X. Gao; G. Yuan; W. B. Wang
J. Vac. Sci. Technol. B 18, 2710–2713 (2000) https://doi.org/10.1116/1.1326945
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Characterization of the surface morphology and electronic properties of microwave enhanced chemical vapor deposited diamond films
A. G. Fitzgerald; Y. Fan; P. John; C. E. Troupe; J. I. R. Wilson
J. Vac. Sci. Technol. B 18, 2714–2721 (2000) https://doi.org/10.1116/1.1326946
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Enhancement in field emission of silicon microtips by bias-assisted carburization
P. D. Kichambare; F. G. Tarntair; L. C. Chen; K. H. Chen; H. C. Cheng
J. Vac. Sci. Technol. B 18, 2722–2729 (2000) https://doi.org/10.1116/1.1320809
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Polysubstituted derivatives of triphenylene as high resolution electron beam resists for nanolithography
A. P. G. Robinson; R. E. Palmer; T. Tada; T. Kanayama; M. T. Allen; J. A. Preece; K. D. M. Harris
J. Vac. Sci. Technol. B 18, 2730–2736 (2000) https://doi.org/10.1116/1.1322045
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Comparative study of sputtered and spin-coatable aluminum oxide electron beam resists
M. S. M. Saifullah; K. Kurihara; C. J. Humphreys
J. Vac. Sci. Technol. B 18, 2737–2744 (2000) https://doi.org/10.1116/1.1323970
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How to make polyvinylphenol inhibitable by diazonaphthoquinone sulfonates
Zhenglin Yan; Tung-Feng Yeh; Xiaohua He; Arnost Reiser; Frank L. Schadt, III; Curtis R. Fincher
J. Vac. Sci. Technol. B 18, 2745–2749 (2000) https://doi.org/10.1116/1.1322041
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High performance micropane electron beam window
Roger A. Dougal; Shengyi Liu
J. Vac. Sci. Technol. B 18, 2750–2756 (2000) https://doi.org/10.1116/1.1319694
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Design and development of plasma enhanced chemical vapor deposition universal antireflective layer films for deep subquarter micron deep ultraviolet applications
Ying Wang; Ken MacWilliams; Zia Karim; Wendy Fan; Michael Reilly; James M. Holden
J. Vac. Sci. Technol. B 18, 2757–2762 (2000) https://doi.org/10.1116/1.1319695
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Effects of fluorocarbon polymer deposition on the selective etching of SiO2/photoresist in high density plasma
Changwoong Chu; Taehyuk Ahn; Jisoo Kim; Sangsup Jeong; Jootae Moon
J. Vac. Sci. Technol. B 18, 2763–2768 (2000) https://doi.org/10.1116/1.1322046
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Direct pattern etching for micromachining applications without the use of a resist mask
Byeong-Ok Cho; Jung-Hyun Ryu; Sung-Wook Hwang; Gyeo-Re Lee; Sang Heup Moon
J. Vac. Sci. Technol. B 18, 2769–2773 (2000) https://doi.org/10.1116/1.1322044
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Electron population above 13.5 eV in ultrahigh frequency and inductively coupled plasmas through C2F4/CF3I and C4F8/Ar gas mixtures
Toshiki Nakano; Seiji Samukawa
J. Vac. Sci. Technol. B 18, 2774–2779 (2000) https://doi.org/10.1116/1.1316104
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Study of grass formation in GaAs backside via etching using inductively coupled plasma system
P. S. Nam; L. M. Ferreira; T. Y. Lee; K. N. Tu
J. Vac. Sci. Technol. B 18, 2780–2784 (2000) https://doi.org/10.1116/1.1320803
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Two-channel spectroscopic reflectometry for in situ monitoring of blanket and patterned structures during reactive ion etching
Brooke S. Stutzman; Hsu-Ting Huang; Fred L. Terry, Jr.
J. Vac. Sci. Technol. B 18, 2785–2793 (2000) https://doi.org/10.1116/1.1327301
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Development and qualification of a vacuum pumping system for metalorganic vapor phase epitaxy copper precursors
R. P. Davis; R. A. Abreu
J. Vac. Sci. Technol. B 18, 2794–2798 (2000) https://doi.org/10.1116/1.1320805
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Oxygen plasma induced degradation in InGaAs/InP heterostructures
R. Driad; W. R. McKinnon; S. P. McAlister
J. Vac. Sci. Technol. B 18, 2799–2802 (2000) https://doi.org/10.1116/1.1320801
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CH4/H2 reactive ion etching induced damage of InP
H. C. Neitzert; R. Fang; M. Kunst; N. Layadi
J. Vac. Sci. Technol. B 18, 2803–2807 (2000) https://doi.org/10.1116/1.1326944
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Characterization of showerhead performance at low pressure
D. B. Hash; T. Mihopoulos; T. R. Govindan; M. Meyyappan
J. Vac. Sci. Technol. B 18, 2808–2813 (2000) https://doi.org/10.1116/1.1322048
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Thermal stability and adhesion improvement of Ag deposited on Pa-n by oxygen plasma treatment
Kaustubh S. Gadre; T. L. Alford
J. Vac. Sci. Technol. B 18, 2814–2819 (2000) https://doi.org/10.1116/1.1327300
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Thermal modeling of a polysilicon-metal test structure used for thermally induced voltage alteration characterization
Paiboon Tangyunyong; David Benson; Edward I. Cole, Jr.
J. Vac. Sci. Technol. B 18, 2820–2825 (2000) https://doi.org/10.1116/1.1327297
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Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects
Fen Chen; Baozhen Li; Timothy D. Sullivan; Clara L. Gonzalez; Christopher D. Muzzy; H. K. Lee; Mark D. Levy; Michael W. Dashiell; James Kolodzey
J. Vac. Sci. Technol. B 18, 2826–2834 (2000) https://doi.org/10.1116/1.1319691
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Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor
Shao-Yu Chiu; Jia-Min Shieh; Shih-Chieh Chang; Kun-Cheng Lin; Bau-Tong Dai; Chia-Fu Chen; Ming-Shiann Feng
J. Vac. Sci. Technol. B 18, 2835–2841 (2000) https://doi.org/10.1116/1.1322042
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Effect of various sputtering parameters on Ta phase formation using an I-Optimal experimental design
Charles S. Whitman
J. Vac. Sci. Technol. B 18, 2842–2847 (2000) https://doi.org/10.1116/1.1319701
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Electrical characteristics of metal–ferroelectric (PbZrxTi1−xO3)–insulator(Ta2O5)–silicon structure for nonvolatile memory applications
Chi-yuan Sze; Joseph Ya-min Lee
J. Vac. Sci. Technol. B 18, 2848–2850 (2000) https://doi.org/10.1116/1.1319698
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Electronic structure and mechanical properties of hard coatings from the chromium–tungsten nitride system
P. Hones; M. Diserens; R. Sanjinés; F. Lévy
J. Vac. Sci. Technol. B 18, 2851–2856 (2000) https://doi.org/10.1116/1.1320806
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BRIEF REPORTS AND COMMENTS

Electron-beam direct writing using RD2000N for fabrication of nanodevices
A. Dutta; S. P. Lee; Y. Hayafune; S. Oda
J. Vac. Sci. Technol. B 18, 2857–2861 (2000) https://doi.org/10.1116/1.1323969
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RAPID COMMUNICATIONS

Thin SiO2 layers on Si(111) with ultralow atomic step density
Antonio C. Oliver; Jack M. Blakely
J. Vac. Sci. Technol. B 18, 2862–2864 (2000) https://doi.org/10.1116/1.1320804
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PAPERS FROM THE 44TH INTERNATIONAL CONFERENCE ON ELECTRON, ION, AND PHOTON BEAM TECHNOLOGY AND NANOFABRICATION

OPTICAL LITHOGRAPHY
Implementing advanced lithography technology: A 100 MHz, 1 V digital signal processor fabricated with phase shifted gates
G. P. Watson; I. C. Kizilyalli; O. Nalamasu; R. A. Cirelli; M. Miller; Y. Wang; B. Pati; J. Radosevich; R. Kohler; R. Freyman; F. Klemens; W. Mansfield; H. Vaidya; A. Timko; L. Trimble; J. Frackoviak
J. Vac. Sci. Technol. B 18, 2877–2880 (2000) https://doi.org/10.1116/1.1328056
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Lithographic patterning and confocal imaging with zone plates
Darı́o Gil; Rajesh Menon; D. J. D. Carter; Henry I. Smith
J. Vac. Sci. Technol. B 18, 2881–2885 (2000) https://doi.org/10.1116/1.1321293
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Sub-100 nm silicon on insulator complimentary metal–oxide semiconductor transistors by deep ultraviolet optical lithography
M. Fritze; J. Burns; P. W. Wyatt; C. K. Chen; P. Gouker; C. L. Chen; C. Keast; D. Astolfi; D. Yost; D. Preble; A. Curtis; P. Davis; S. Cann; S. Deneault; H. Y. Liu
J. Vac. Sci. Technol. B 18, 2886–2890 (2000) https://doi.org/10.1116/1.1314387
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Defect formation and structural alternation in modified SiO2 glasses by irradiation with F2 laser or ArF excimer laser
Yoshiaki Ikuta; Shinya Kikugawa; Masahiro Hirano; Hideo Hosono
J. Vac. Sci. Technol. B 18, 2891–2895 (2000) https://doi.org/10.1116/1.1328055
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Shape engineering: A novel optical proximity correction technique for attenuated phase-shift mask
S. Pau; K. Bolan; M. Blakey; O. Nalamasu
J. Vac. Sci. Technol. B 18, 2896–2899 (2000) https://doi.org/10.1116/1.1313570
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Analytic study of gratings patterned by evanescent near field optical lithography
S. J. McNab; R. J. Blaikie; M. M. Alkaisi
J. Vac. Sci. Technol. B 18, 2900–2904 (2000) https://doi.org/10.1116/1.1319837
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EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY

Development of the large field extreme ultraviolet lithography camera
T. Watanabe; H. Kinoshita; H. Nii; Y. Li; K. Hamamoto; T. Oshino; K. Sugisaki; K. Murakami; S. Irie; S. Shirayone; Y. Gomei; S. Okazaki
J. Vac. Sci. Technol. B 18, 2905–2910 (2000) https://doi.org/10.1116/1.1319712
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Extreme ultraviolet alignment and testing of a four-mirror ring field extreme ultraviolet optical system
Kenneth A. Goldberg; Patrick Naulleau; Phillip Batson; Paul Denham; Erik H. Anderson; Henry Chapman; Jeffrey Bokor
J. Vac. Sci. Technol. B 18, 2911–2915 (2000) https://doi.org/10.1116/1.1319703
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At-wavelength extreme ultraviolet lithography mask inspection using a Mirau interferometric microscope
Tsuneyuki Haga; Hisataka Takenaka; Makoto Fukuda
J. Vac. Sci. Technol. B 18, 2916–2920 (2000) https://doi.org/10.1116/1.1319702
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Reticle’s contribution to critical dimension control and overlay in extreme-ultraviolet lithography
H. Meiling; J. P. H. Benschop; E. Loopstra; J. E. van der Werf; M. H. A. Leenders
J. Vac. Sci. Technol. B 18, 2921–2925 (2000) https://doi.org/10.1116/1.1321276
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Extreme ultraviolet mask defect simulation: Low-profile defects
Tom Pistor; Yunfei Deng; Andrew Neureuther
J. Vac. Sci. Technol. B 18, 2926–2929 (2000) https://doi.org/10.1116/1.1324616
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Characterization of extreme ultraviolet lithography mask defects from extreme ultraviolet far-field scattering patterns
Moonsuk Yi; Seongtae Jeong; Seno Rekawa; Jeffrey Bokor
J. Vac. Sci. Technol. B 18, 2930–2934 (2000) https://doi.org/10.1116/1.1319843
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Extreme ultraviolet holographic microscopy and its application to extreme ultraviolet mask-blank defect characterization
Sang Hun Lee; Jeffrey Bokor; Patrick Naulleau; Seong Tae Jeong; Kenneth A. Goldberg
J. Vac. Sci. Technol. B 18, 2935–2938 (2000) https://doi.org/10.1116/1.1314382
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Extreme ultraviolet carrier-frequency shearing interferometry of a lithographic four-mirror optical system
Patrick P. Naulleau; Kenneth A. Goldberg; Jeffrey Bokor
J. Vac. Sci. Technol. B 18, 2939–2943 (2000) https://doi.org/10.1116/1.1321290
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Effects of smoothing on defect printability at extreme ultraviolet wavelengths
G. F. Cardinale; A. K. Ray-Chaudhuri; A. Fisher; P. S. J. Mangat; J. Wasson; P. B. Mirkarimi; E. Gullikson
J. Vac. Sci. Technol. B 18, 2944–2949 (2000) https://doi.org/10.1116/1.1324637
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X-RAY LITHOGRAPHY AND MICROSCOPY

Proposal for a 50 nm proximity x-ray lithography system and extension to 35 nm by resist material selection
Toyoki Kitayama; Kenji Itoga; Yutaka Watanabe; Shunichi Uzawa
J. Vac. Sci. Technol. B 18, 2950–2954 (2000) https://doi.org/10.1116/1.1324644
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Technology and performance of the Canon XRA-1000 production x-ray stepper
Nobutoshi Mizusawa; Kouji Uda; Yutaka Tanaka; Hirohisa Ohta; Yutaka Watanabe
J. Vac. Sci. Technol. B 18, 2955–2960 (2000) https://doi.org/10.1116/1.1324619
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Overlay evaluation of proximity x-ray lithography in 100 nm device fabrication
H. Aoyama; T. Taguchi; Y. Matsui; M. Fukuda; K. Deguchi; H. Morita; M. Oda; T. Matsuda; F. Kumasaka; Y. Iba; K. Horiuchi
J. Vac. Sci. Technol. B 18, 2961–2965 (2000) https://doi.org/10.1116/1.1319686
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Membrane-mask distortion correction: Analytical and experimental results
Ken-ichi Murooka; Michael H. Lim; Henry I. Smith
J. Vac. Sci. Technol. B 18, 2966–2969 (2000) https://doi.org/10.1116/1.1314368
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Nanofabrication and diffractive optics for high-resolution x-ray applications
Erik H. Anderson; Deirdre L. Olynick; Bruce Harteneck; Eugene Veklerov; Gregory Denbeaux; Weilun Chao; Angelic Lucero; Lewis Johnson; David Attwood
J. Vac. Sci. Technol. B 18, 2970–2975 (2000) https://doi.org/10.1116/1.1321282
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Generation of arbitrary three dimensional surfaces by x-ray lithography
M. Feldman; G. S. Lee; D. Noel; C. Khan Malek; R. Bass
J. Vac. Sci. Technol. B 18, 2976–2980 (2000) https://doi.org/10.1116/1.1321272
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Zone-plate-array lithography using synchrotron radiation
A. Pépin; D. Decanini; Y. Chen
J. Vac. Sci. Technol. B 18, 2981–2985 (2000) https://doi.org/10.1116/1.1321275
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Performance of a compact beamline with high brightness for x-ray lithography
Sayumi Hirose; Tsutomu Miyatake; Xuan Li; Eijiro Toyota; Masaoki Hirose; Kiyoshi Fujii; Katsumi Suzuki
J. Vac. Sci. Technol. B 18, 2986–2989 (2000) https://doi.org/10.1116/1.1319832
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Highly accurate x-ray masks with 100-nm-class high-density device patterns
Shingo Uchiyama; Masaru Shimada; Tai Tsuchizawa; Takashi Ohkubo; Masatoshi Oda; Hideo Yoshihara
J. Vac. Sci. Technol. B 18, 2990–2994 (2000) https://doi.org/10.1116/1.1321763
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Overlay compatibility between two synchroton radiation steppers
Makoto Fukuda; Masanori Suzuki; Tsuneyuki Haga; Hirofumi Morita; Hajime Aoyama; Souichirou Mitsui; Takao Taguchi; Yasuji Matsui
J. Vac. Sci. Technol. B 18, 2995–2998 (2000) https://doi.org/10.1116/1.1319831
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CHARGED PARTICLE AND PHOTON OPTICS

Scaled measurements of global space-charge induced image blur in electron beam projection system
Liqun Han; R. Fabian Pease; W. Dan Meisburger; Gil I. Winograd; Kimitoshi Takahashi
J. Vac. Sci. Technol. B 18, 2999–3003 (2000) https://doi.org/10.1116/1.1314367
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Structure of stochastic Coulomb interactions in electron beam columns
Bo Wu; Andrew R. Neureuther
J. Vac. Sci. Technol. B 18, 3004–3009 (2000) https://doi.org/10.1116/1.1324645
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Multisource optimization of a column for electron lithography
M. Mankos; S. Coyle; A. Fernandez; A. Sagle; P. Allen; W. Owens; J. Sullivan; T. H. P. Chang
J. Vac. Sci. Technol. B 18, 3010–3016 (2000) https://doi.org/10.1116/1.1321752
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Electron optical image correction subsystem in electron beam projection lithography
S. Kojima; W. Stickel; J. D. Rockrohr; M. Gordon
J. Vac. Sci. Technol. B 18, 3017–3022 (2000) https://doi.org/10.1116/1.1324641
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Analytic evaluation of the intensity point spread function
Gregg M. Gallatin
J. Vac. Sci. Technol. B 18, 3023–3028 (2000) https://doi.org/10.1116/1.1324617
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Application of the generalized curvilinear variable axis lens to electron projection
W. Stickel; G. O. Langner
J. Vac. Sci. Technol. B 18, 3029–3033 (2000) https://doi.org/10.1116/1.1313579
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Computer aided design and analysis of imaging energy filters with inhomogeneous bending magnets
Eric Munro; John Rouse
J. Vac. Sci. Technol. B 18, 3034–3041 (2000) https://doi.org/10.1116/1.1319841
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Prospect for high brightness III–nitride electron emitter
Francisco Machuca; Y. Sun; Z. Liu; K. Ioakeimidi; P. Pianetta; R. F. W. Pease
J. Vac. Sci. Technol. B 18, 3042–3046 (2000) https://doi.org/10.1116/1.1321270
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Depth of field at high magnifications of scanning electron microscopes
Mitsugu Sato; Fumio Mizuno
J. Vac. Sci. Technol. B 18, 3047–3051 (2000) https://doi.org/10.1116/1.1319840
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Demonstration of multiblanker electron-beam technology
G. Winograd; V. Krishnamurthi; R. Garcia; L. H. Veneklasen; M. Mankos; F. Pease
J. Vac. Sci. Technol. B 18, 3052–3056 (2000) https://doi.org/10.1116/1.1321757
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Optimization of microcolumn electron optics for high-current applications
M. Mankos; K. Y. Lee; L. Muray; J. Spallas; Y. Hsu; C. Stebler; W. DeVore; E. Bullock; T. H. P. Chang
J. Vac. Sci. Technol. B 18, 3057–3060 (2000) https://doi.org/10.1116/1.1321756
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New concept for high-throughput multielectron beam direct write system
Masato Muraki; Susumu Gotoh
J. Vac. Sci. Technol. B 18, 3061–3066 (2000) https://doi.org/10.1116/1.1320798
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Correction of the field curvature in SCALPEL projection systems
K. Xiu; J. M. Gibson
J. Vac. Sci. Technol. B 18, 3067–3071 (2000) https://doi.org/10.1116/1.1321287
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ELECTRON BEAM LITHOGRAPHY

PREVAIL Alpha system: Status and design considerations
S. D. Golladay; H. C. Pfeiffer; J. D. Rockrohr; W. Stickel
J. Vac. Sci. Technol. B 18, 3072–3078 (2000) https://doi.org/10.1116/1.1314381
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PREVAIL: Dynamic correction of aberrations
M. S. Gordon; W. A. Enichen; S. D. Golladay; H. C. Pfeiffer; C. F. Robinson; W. Stickel
J. Vac. Sci. Technol. B 18, 3079–3083 (2000) https://doi.org/10.1116/1.1319710
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Patterning performance of EB-X3 x-ray mask writer
Shigehisa Ohki; Toshifumi Watanabe; Yuji Takeda; Tetsuo Morosawa; Kenichi Saito; Tatsuya Kunioka; Junichi Kato; Akira Shimizu; Tadahito Matsuda; Shinji Tsuboi; Hajime Aoyama; Hiroshi Watanabe; Yoshinori Nakayama
J. Vac. Sci. Technol. B 18, 3084–3088 (2000) https://doi.org/10.1116/1.1319708
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Evaluation of a 100 kV thermal field emission electron-beam nanolithography system
D. M. Tennant; R. Fullowan; H. Takemura; M. Isobe; Y. Nakagawa
J. Vac. Sci. Technol. B 18, 3089–3094 (2000) https://doi.org/10.1116/1.1319707
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Calculation of surface potential and beam deflection due to charging effects in electron beam lithography
Yongjae Lee; Woojin Lee; Kukjin Chun
J. Vac. Sci. Technol. B 18, 3095–3098 (2000) https://doi.org/10.1116/1.1319822
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Advances in arrayed microcolumn lithography
L. P. Muray; J. P. Spallas; C. Stebler; K. Lee; M. Mankos; Y. Hsu; M. Gmur; T. H. P. Chang
J. Vac. Sci. Technol. B 18, 3099–3104 (2000) https://doi.org/10.1116/1.1321760
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Quantitative factor analysis of resolution limit in electron beam lithography using the edge roughness evaluation method
Masaki Yoshizawa; Shigeru Moriya
J. Vac. Sci. Technol. B 18, 3105–3110 (2000) https://doi.org/10.1116/1.1319844
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Grid lens approach for high effective emittance in SCALPEL®
D. Moonen; S. van Kranen; P. Kruit; V. Katsap; W. K. Waskiewicz
J. Vac. Sci. Technol. B 18, 3111–3114 (2000) https://doi.org/10.1116/1.1324643
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Analytical-based solutions for SCALPEL wafer heating
N. Fares; S. Stanton; J. Liddle; G. Gallatin
J. Vac. Sci. Technol. B 18, 3115–3121 (2000) https://doi.org/10.1116/1.1319839
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Charge induced pattern distortion in low energy electron beam lithography
K. M. Satyalakshmi; A. Olkhovets; M. G. Metzler; C. K. Harnett; D. M. Tanenbaum; H. G. Craighead
J. Vac. Sci. Technol. B 18, 3122–3125 (2000) https://doi.org/10.1116/1.1321755
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Electron optical column for a multicolumn, multibeam direct-write electron beam lithography system
E. Yin; A. D. Brodie; F. C. Tsai; G. X. Guo; N. W. Parker
J. Vac. Sci. Technol. B 18, 3126–3131 (2000) https://doi.org/10.1116/1.1318187
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Demagnifying immersion magnetic lenses used for projection electron beam lithography without crossovers
Min Cheng; Tiantong Tang
J. Vac. Sci. Technol. B 18, 3132–3137 (2000) https://doi.org/10.1116/1.1320796
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Implementation of real-time proximity effect correction in a raster shaped beam tool
V. Boegli; L. Johnson; H. Kao; L. Veneklasen; U. Hofmann; I. Finkelstein; S. Stovall; S. Rishton
J. Vac. Sci. Technol. B 18, 3138–3142 (2000) https://doi.org/10.1116/1.1324614
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Sub-0.1 μ electron-beam lithography for nanostructure development
Martin Peckerar; Robert Bass; Kee Woo Rhee
J. Vac. Sci. Technol. B 18, 3143–3149 (2000) https://doi.org/10.1116/1.1321278
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Proximity effect correction using pattern shape modification and area density map
Kimitoshi Takahashi; Morimi Osawa; Masami Sato; Hiroshi Arimoto; Kozo Ogino; Hiromi Hoshino; Yasuhide Machida
J. Vac. Sci. Technol. B 18, 3150–3157 (2000) https://doi.org/10.1116/1.1313576
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ION BEAMS, LITHOGRAPHY, AND BEAM INDUCED PROCESSING

Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion beam implantation and successive overlayer growth
Takuo Hada; Takayuki Goto; Junichi Yanagisawa; Fujio Wakaya; Yoshihiko Yuba; Kenji Gamo
J. Vac. Sci. Technol. B 18, 3158–3161 (2000) https://doi.org/10.1116/1.1319683
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Focused ion beam patterning of III–V crystals at low temperature: A method for improving the ion-induced defect localization
M. Schneider; J. Gierak; J. Y. Marzin; B. Gayral; J. M. Gérard
J. Vac. Sci. Technol. B 18, 3162–3167 (2000) https://doi.org/10.1116/1.1328054
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Focused electron beam induced deposition of gold
I. Utke; P. Hoffmann; B. Dwir; K. Leifer; E. Kapon; P. Doppelt
J. Vac. Sci. Technol. B 18, 3168–3171 (2000) https://doi.org/10.1116/1.1319690
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Pattern generators and microcolumns for ion beam lithography
K. L. Scott; T.-J. King; M. A. Lieberman; K.-N. Leung
J. Vac. Sci. Technol. B 18, 3172–3176 (2000) https://doi.org/10.1116/1.1314384
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Determination of resist exposure parameters in helium ion beam lithography: Absorbed energy gradient, contrast, and critical dose
P. Ruchhoeft; J. C. Wolfe
J. Vac. Sci. Technol. B 18, 3177–3180 (2000) https://doi.org/10.1116/1.1319830
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Three-dimensional nanostructure fabrication by focused-ion-beam chemical vapor deposition
Shinji Matsui; Takashi Kaito; Jun-ichi Fujita; Masanori Komuro; Kazuhiro Kanda; Yuichi Haruyama
J. Vac. Sci. Technol. B 18, 3181–3184 (2000) https://doi.org/10.1116/1.1319689
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Optimal strategy for controlling linewidth on spherical focal surface arrays
P. Ruchhoeft; J. C. Wolfe
J. Vac. Sci. Technol. B 18, 3185–3189 (2000) https://doi.org/10.1116/1.1319842
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Modeling of focused ion beam induced surface chemistry
Klaus Edinger; Thomas Kraus
J. Vac. Sci. Technol. B 18, 3190–3193 (2000) https://doi.org/10.1116/1.1321761
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Performance of multicusp plasma ion source for focused ion beam applications
L. Scipioni; D. Stewart; D. Ferranti; A. Saxonis
J. Vac. Sci. Technol. B 18, 3194–3197 (2000) https://doi.org/10.1116/1.1320797
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Maskless deposition of gold patterns on silicon
Lynden E. Erickson; Patrik Schmuki; Garth Champion
J. Vac. Sci. Technol. B 18, 3198–3201 (2000) https://doi.org/10.1116/1.1321753
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MASKS

Fabrication of open stencil masks with asymmetric void ratio for the ion projection lithography space charge experiment
B. Volland; F. Shi; H. Heerlein; I. W. Rangelow; P. Hudek; I. Kostic; E. Cekan; H. Vonach; H. Loeschner; C. Horner; G. Stengl; H. Buschbeck; M. Zeininger; A. Bleeker; J. Benschop
J. Vac. Sci. Technol. B 18, 3202–3206 (2000) https://doi.org/10.1116/1.1319688
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Experimental evaluation of an optimized radiation cooling geometry for ion projection lithography masks
J. L. Torres; H. N. Nounu; J. R. Wasson; J. C. Wolfe; J. Lutz; E. Haugeneder; H. Löschner; G. Stengl; R. Kaesmaier
J. Vac. Sci. Technol. B 18, 3207–3209 (2000) https://doi.org/10.1116/1.1314380
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Fabrication of masks for electron-beam projection lithography
Michael Lercel; Chris Magg; Monica Barrett; Kevin Collins; Michael Trybendis; Neal Caldwell; Ray Jeffer; Lucien Bouchard
J. Vac. Sci. Technol. B 18, 3210–3215 (2000) https://doi.org/10.1116/1.1314370
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Progress in extreme ultraviolet mask repair using a focused ion beam
Ted Liang; Alan Stivers; Richard Livengood; Pei-Yang Yan; Guojing Zhang; Fu-Chang Lo
J. Vac. Sci. Technol. B 18, 3216–3220 (2000) https://doi.org/10.1116/1.1319687
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Mechanical analysis of the PLASMAX particle removal process for optical and next-generation lithography masks
W. H. Semke; E. J. Weisbrod; R. L. Engelstad; E. G. Lovell; J. J. Festa; J. B. Bailey
J. Vac. Sci. Technol. B 18, 3221–3226 (2000) https://doi.org/10.1116/1.1314369
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Characterization of phase defects in phase shift masks
Konstantinos Adam; Shoji Hotta; Andrew R. Neureuther
J. Vac. Sci. Technol. B 18, 3227–3231 (2000) https://doi.org/10.1116/1.1321284
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TaSiN thin-film pattern transfer optimization for 200 mm SCALPEL and extreme ultraviolet lithography masks
W. J. Dauksher; D. J. Resnick; S. B. Clemens; D. L. Standfast; Z. S. Masnyj; J. R. Wasson; N. M. Bergmann; S.-I. Han; P. J. S. Mangat
J. Vac. Sci. Technol. B 18, 3232–3236 (2000) https://doi.org/10.1116/1.1313575
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High-performance membrane mask for electron projection lithography
Hiroshi Yamashita; Isao Amemiya; Eiichi Nomura; Ken Nakajima; Hiroshi Nozue
J. Vac. Sci. Technol. B 18, 3237–3241 (2000) https://doi.org/10.1116/1.1319829
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Inter- and intramembrane resist critical dimension uniformity across a SCALPEL mask
K. Nordquist; E. Ainley; D. J. Resnick; E. Weisbrod; C. Martin; R. Engelstad; Z. Masnyj; P. Mangat
J. Vac. Sci. Technol. B 18, 3242–3247 (2000) https://doi.org/10.1116/1.1324642
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Simulating the mechanical response of electron-beam projection lithography masks
A. F. Jachim; C.-F. Chen; R. L. Engelstad; E. G. Lovell; P. J. S. Mangat; W. J. Dauksher
J. Vac. Sci. Technol. B 18, 3248–3253 (2000) https://doi.org/10.1116/1.1313574
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Stencil reticle repair for electron beam projection lithography
Masashi Okada; Sumito Shimizu; Shintaro Kawata; Takashi Kaito
J. Vac. Sci. Technol. B 18, 3254–3258 (2000) https://doi.org/10.1116/1.1319828
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Thickness analysis of silicon membranes for stencil masks
E. Sossna; R. Kassing; I. W. Rangelow; C. M. Herzinger; T. E. Tiwald; J. A. Woollam; Th. Wagner
J. Vac. Sci. Technol. B 18, 3259–3263 (2000) https://doi.org/10.1116/1.1319827
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METROLOGY

Scanning probe metrology in the presence of surface charge
J. E. Griffith; E. M. Kneedler; S. Ningen; A. Berghaus; C. E. Bryson, III; S. Pau; E. Houge; T. Shofner
J. Vac. Sci. Technol. B 18, 3264–3267 (2000) https://doi.org/10.1116/1.1313586
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Two-dimensional spatial-phase-locked electron-beam lithography via sparse sampling
J. T. Hastings; Feng Zhang; M. A. Finlayson; J. G. Goodberlet; Henry I. Smith
J. Vac. Sci. Technol. B 18, 3268–3271 (2000) https://doi.org/10.1116/1.1314371
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Microcomb design and fabrication for high accuracy optical assembly
Carl G. Chen; Ralf K. Heilmann; Paul T. Konkola; Olivier Mongrard; Glen P. Monnelly; Mark L. Schattenburg
J. Vac. Sci. Technol. B 18, 3272–3276 (2000) https://doi.org/10.1116/1.1313585
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Relativistic corrections in displacement measuring interferometry
Ralf K. Heilmann; Paul T. Konkola; Carl G. Chen; Mark L. Schattenburg
J. Vac. Sci. Technol. B 18, 3277–3281 (2000) https://doi.org/10.1116/1.1313584
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Beam steering system and spatial filtering applied to interference lithography
Paul T. Konkola; Carl G. Chen; Ralf K. Heilmann; Mark L. Schattenburg
J. Vac. Sci. Technol. B 18, 3282–3286 (2000) https://doi.org/10.1116/1.1314385
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Characterization of field stitching in electron-beam lithography using moiré metrology
T. E. Murphy; Mark K. Mondol; Henry I. Smith
J. Vac. Sci. Technol. B 18, 3287–3291 (2000) https://doi.org/10.1116/1.1313573
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RESISTS

Surface and line-edge roughness in solution and plasma developed negative tone resists: Experiment and simulation
G. P. Patsis; A. Tserepi; I. Raptis; N. Glezos; E. Gogolides; E. S. Valamontes
J. Vac. Sci. Technol. B 18, 3292–3296 (2000) https://doi.org/10.1116/1.1321281
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Energy transfer between electrons and photoresist: Its relation to resolution
Geng Han; Franco Cerrina
J. Vac. Sci. Technol. B 18, 3297–3302 (2000) https://doi.org/10.1116/1.1318188
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Comparison of resist collapse properties for deep ultraviolet and 193 nm resist platforms
Heidi B. Cao; Paul F. Nealey; Wolf-Dieter Domke
J. Vac. Sci. Technol. B 18, 3303–3307 (2000) https://doi.org/10.1116/1.1321280
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Supercritical drying for water-rinsed resist systems
Hideo Namatsu
J. Vac. Sci. Technol. B 18, 3308–3312 (2000) https://doi.org/10.1116/1.1313583
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Aqueous-based photoresist drying using supercritical carbon dioxide to prevent pattern collapse
Darı́o L. Goldfarb; Juan J. de Pablo; Paul F. Nealey; John P. Simons; Wayne M. Moreau; Marie Angelopoulos
J. Vac. Sci. Technol. B 18, 3313–3317 (2000) https://doi.org/10.1116/1.1313582
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Enhancement of resist resolution and sensitivity via applied electric field
Mosong Cheng; Ebo Croffie; Lei Yuan; Andrew Neureuther
J. Vac. Sci. Technol. B 18, 3318–3322 (2000) https://doi.org/10.1116/1.1324646
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Optimized bilayer hexamethyldisiloxane film as bottom antireflective coating for both KrF and ArF lithographies
C. H. Lin; L. A. Wang; H. L. Chen
J. Vac. Sci. Technol. B 18, 3323–3327 (2000) https://doi.org/10.1116/1.1321273
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Vacuum ultraviolet spectra of fluorocompounds for 157 nm lithography
Minoru Toriumi; Isao Satou; Toshiro Itani
J. Vac. Sci. Technol. B 18, 3328–3331 (2000) https://doi.org/10.1116/1.1319836
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Polymer photochemistry at advanced optical wavelengths
Theodore H. Fedynyshyn; Roderick R. Kunz; Roger F. Sinta; Russell B. Goodman; Scott P. Doran
J. Vac. Sci. Technol. B 18, 3332–3339 (2000) https://doi.org/10.1116/1.1318186
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Modeling influence of structural changes in photoacid generators on 193 nm single layer resist imaging
Ebo Croffie; Lei Yuan; Mosong Cheng; Andrew Neureuther; Frank Houlihan; Ray Cirelli; Pat Watson; Om Nalamasu; Allen Gabor
J. Vac. Sci. Technol. B 18, 3340–3344 (2000) https://doi.org/10.1116/1.1324636
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Lithographic performance of thin dendritic polymer resists
Mike Williamson; Andy Neureuther
J. Vac. Sci. Technol. B 18, 3345–3348 (2000) https://doi.org/10.1116/1.1324638
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Resist profile characteristics caused by photoelectron and Auger electron blur at the resist–tungsten substrate interface in 100 nm proximity x-ray lithography
Younghun Seo; Changhwan Lee; Yongduk Seo; Ohyun Kim; Hyunpil Noh; Heesang Kim
J. Vac. Sci. Technol. B 18, 3349–3353 (2000) https://doi.org/10.1116/1.1321292
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Evaluation of alternative development process for high-aspect-ratio poly(methylmethacrylate) microstructures in deep x-ray lithography
Chantal Khan Malek; Sasi Yajamanyam
J. Vac. Sci. Technol. B 18, 3354–3359 (2000) https://doi.org/10.1116/1.1321759
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Lithography using ultrathin resist films
Christopher Pike; Scott Bell; Chris Lyons; Marina Plat; Harry Levinson; Uzodinma Okoroanyanwu
J. Vac. Sci. Technol. B 18, 3360–3363 (2000) https://doi.org/10.1116/1.1324640
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Outgassing of photoresist materials at extreme ultraviolet wavelengths
Paul M. Dentinger
J. Vac. Sci. Technol. B 18, 3364–3370 (2000) https://doi.org/10.1116/1.1314383
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Correlation between the chemical compositions and optical properties of AlSixNy embedded layer for attenuated phase-shifting mask in 193 nm and the modification of the R–T method for measuring n and k
Cheng-ming Lin; Wen-an Loong
J. Vac. Sci. Technol. B 18, 3371–3375 (2000) https://doi.org/10.1116/1.1319835
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Scaling of Tg and reaction rate with film thickness in photoresist: A thermal probe study
David S. Fryer; Paul F. Nealey; Juan J. de Pablo
J. Vac. Sci. Technol. B 18, 3376–3380 (2000) https://doi.org/10.1116/1.1324621
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Thin film instabilities and implications for ultrathin resist processes
Uzodinma Okoroanyanwu
J. Vac. Sci. Technol. B 18, 3381–3387 (2000) https://doi.org/10.1116/1.1321291
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Resolution limit of negative tone chemically amplified resist used for hybrid lithography: Influence of the molecular weight
L. Pain; C. Higgins; B. Scarfoglière; S. Tedesco; B. Dal’Zotto; C. Gourgon; M. Ribeiro; T. Kusumoto; M. Suetsugu; R. Hanawa
J. Vac. Sci. Technol. B 18, 3388–3395 (2000) https://doi.org/10.1116/1.1321288
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157 nm resist materials: Progress report
Colin Brodsky; Jeff Byers; Will Conley; Raymond Hung; Shintaro Yamada; Kyle Patterson; Mark Somervell; Brian Trinque; H. V. Tran; Sungseo Cho; Takashi Chiba; Shang-Ho Lin; Andrew Jamieson; Heather Johnson; Tony Vander Heyden; C. Grant Willson
J. Vac. Sci. Technol. B 18, 3396–3401 (2000) https://doi.org/10.1116/1.1321762
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Outgassing of photoresists in extreme ultraviolet lithography
Maharshi M. Chauhan; Paul F. Nealey
J. Vac. Sci. Technol. B 18, 3402–3407 (2000) https://doi.org/10.1116/1.1321754
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1 kV resist technology for microcolumn-based electron-beam lithography
K. Y. Lee; Y. Hsu; P. Le; Z. C. H. Tan; T. H. P. Chang; K. Elian
J. Vac. Sci. Technol. B 18, 3408–3413 (2000) https://doi.org/10.1116/1.1321758
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Nanoscale patterning of self-assembled monolayers with electrons
A. Gölzhäuser; W. Geyer; V. Stadler; W. Eck; M. Grunze; K. Edinger; Th. Weimann; P. Hinze
J. Vac. Sci. Technol. B 18, 3414–3418 (2000) https://doi.org/10.1116/1.1319711
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Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography
Falco C. M. J. M. van Delft; Jos P. Weterings; Anja K. van Langen-Suurling; Hans Romijn
J. Vac. Sci. Technol. B 18, 3419–3423 (2000) https://doi.org/10.1116/1.1319682
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High-purity, ultrahigh-resolution calixarene electron-beam negative resist
Shoko Manako; Yukinori Ochiai; Hiromasa Yamamoto; Takahiro Teshima; Jun-ichi Fujita; Eiichi Nomura
J. Vac. Sci. Technol. B 18, 3424–3427 (2000) https://doi.org/10.1116/1.1321274
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Calixarene G-line double resist process with 15 nm resolution and large area exposure capability
Jakub Kedzierski; Erik Anderson; Jeffrey Bokor
J. Vac. Sci. Technol. B 18, 3428–3430 (2000) https://doi.org/10.1116/1.1314386
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Aqueous base development and acid diffusion length optimization in negative epoxy resist for electron beam lithography
N. Glezos; P. Argitis; D. Velessiotis; I. Raptis; M. Hatzakis; P. Hudek; I. Kostic
J. Vac. Sci. Technol. B 18, 3431–3434 (2000) https://doi.org/10.1116/1.1324615
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Roughness study of a positive tone high performance SCALPEL resist
L. E. Ocola; P. A. Orphanos; W.-Y. Li; W. Waskiewicz; A. E. Novembre; M. Sato
J. Vac. Sci. Technol. B 18, 3435–3440 (2000) https://doi.org/10.1116/1.1321289
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Influence of developer and development conditions on the behavior of high molecular weight electron beam resists
D. G. Hasko; Shazia Yasin; A. Mumtaz
J. Vac. Sci. Technol. B 18, 3441–3444 (2000) https://doi.org/10.1116/1.1319834
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Evolutionary optimization of the electron-beam lithography process for gate fabrication of high electron mobility transistors
Franck Robin; Andrea Orzati; Otte J. Homan; Werner Bächtold
J. Vac. Sci. Technol. B 18, 3445–3449 (2000) https://doi.org/10.1116/1.1321277
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Mechanical properties and pattern collapse of chemically amplified photoresists
Long Que; Yogesh B. Gianchandani
J. Vac. Sci. Technol. B 18, 3450–3452 (2000) https://doi.org/10.1116/1.1319833
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DRY ETCHING

Kinetics and crystal orientation dependence in high aspect ratio silicon dry etching
M. A. Blauw; T. Zijlstra; R. A. Bakker; E. van der Drift
J. Vac. Sci. Technol. B 18, 3453–3461 (2000) https://doi.org/10.1116/1.1313578
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High speed anisotropic dry etching of CoNbZr for next generation magnetic recording
M. S. P. Andriesse; T. Zijlstra; E. van der Drift
J. Vac. Sci. Technol. B 18, 3462–3466 (2000) https://doi.org/10.1116/1.1313577
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Effects of reactive ion etching on the electrical characteristics of GaN
B. Rong; R. Cheung; W. Gao; M. M. Alkaisi; R. J. Reeves
J. Vac. Sci. Technol. B 18, 3467–3470 (2000) https://doi.org/10.1116/1.1320799
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High resolution inductively coupled plasma etching of 30 nm lines and spaces in tungsten and silicon
Andrew L. Goodyear; Sinclair Mackenzie; Deirdre L. Olynick; Erik H. Anderson
J. Vac. Sci. Technol. B 18, 3471–3475 (2000) https://doi.org/10.1116/1.1326922
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Micromask-induced surface defects inside Si trench isolation
Kyeonglan Rho
J. Vac. Sci. Technol. B 18, 3476–3480 (2000) https://doi.org/10.1116/1.1320800
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NANOFABRICATION AND NANODEVICES

Quantum interference in a vacuum nanotriode
A. A. G. Driskill-Smith; D. G. Hasko; H. Ahmed
J. Vac. Sci. Technol. B 18, 3481–3487 (2000) https://doi.org/10.1116/1.1314388
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Comparative study of self-aligned and nonself-aligned SiGe p-metal–oxide–semiconductor modulation-doped field effect transistors with nanometer gate lengths
Wu Lu; Steven J. Koester; Xie-Wen Wang; Jack O. Chu; Tso-Ping Ma; Ilesanmi Adesida
J. Vac. Sci. Technol. B 18, 3488–3492 (2000) https://doi.org/10.1116/1.1321286
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Fabrication technique for nanometer-scale InAs quantum devices: Observation of quantum interference in Aharonov–Bohm rings and Coulomb blockade in quantum dots
T. H. Chang; K. A. Chen; C. H. Yang; M. J. Yang; D. Park
J. Vac. Sci. Technol. B 18, 3493–3496 (2000) https://doi.org/10.1116/1.1321285
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Nanofabrication using structure controlled hydrogenated Si clusters deposited on Si surfaces
Toshihiko Kanayama; Miyoko O. Watanabe; Leonid Bolotov; Noriyuki Uchida
J. Vac. Sci. Technol. B 18, 3497–3500 (2000) https://doi.org/10.1116/1.1324620
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Nanofabrication techniques for lasers with two-dimensional photonic crystal mirrors
J. Moosburger; Th. Happ; M. Kamp; A. Forchel
J. Vac. Sci. Technol. B 18, 3501–3504 (2000) https://doi.org/10.1116/1.1319826
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Fabrication of three-dimensional photonic structures with submicrometer resolution by x-ray lithography
C. Cuisin; A. Chelnokov; J.-M. Lourtioz; D. Decanini; Y. Chen
J. Vac. Sci. Technol. B 18, 3505–3509 (2000) https://doi.org/10.1116/1.1319825
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Drilled alternating-layer structure for three-dimensional photonic crystals with a full band gap
Eiichi Kuramochi; Masaya Notomi; Toshiaki Tamamura; Takayuki Kawashima; Shojiro Kawakami; Jun-ichi Takahashi; Chiharu Takahashi
J. Vac. Sci. Technol. B 18, 3510–3513 (2000) https://doi.org/10.1116/1.1319824
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Nanoheteroepitaxy: Nanofabrication route to improved epitaxial growth
D. Zubia; S. H. Zaidi; S. D. Hersee; S. R. J. Brueck
J. Vac. Sci. Technol. B 18, 3514–3520 (2000) https://doi.org/10.1116/1.1321283
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Fabrication of 30 nm T gates using SiNx as a supporting and definition layer
Y. Chen; D. Edgar; X. Li; D. Macintyre; S. Thoms
J. Vac. Sci. Technol. B 18, 3521–3524 (2000) https://doi.org/10.1116/1.1321279
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Progress on nanostructuring with Nanojet
J. Voigt; F. Shi; P. Hudek; I. W. Rangelow; K. Edinger
J. Vac. Sci. Technol. B 18, 3525–3529 (2000) https://doi.org/10.1116/1.1319823
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Combining advanced lithographic techniques and self-assembly of thin films of diblock copolymers to produce templates for nanofabrication
Richard D. Peters; Xiao M. Yang; Qiang Wang; Juan J. de Pablo; Paul F. Nealey
J. Vac. Sci. Technol. B 18, 3530–3534 (2000) https://doi.org/10.1116/1.1313572
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Oxide nanodots and ultrathin layers fabricated on silicon using nonfocused multicharged ion beams
G. Borsoni; M. Gros-Jean; M. L. Korwin-Pawlowski; R. Laffitte; V. Le Roux; L. Vallier
J. Vac. Sci. Technol. B 18, 3535–3538 (2000) https://doi.org/10.1116/1.1324647
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Optimization of a lithographic and ion beam etching process for nanostructuring magnetoresistive thin film stacks
Michael E. Walsh; Yaowu Hao; C. A. Ross; Henry I. Smith
J. Vac. Sci. Technol. B 18, 3539–3543 (2000) https://doi.org/10.1116/1.1324639
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Field emission cathode array with self-aligned gate electrode fabricated by silicon micromachining
W. Barth; T. Debski; F. Shi; P. Hudek; I. Kostic; I. W. Rangelow; S. Biehl; T. Iwert; P. Grabiec; K. Studzinska; S. Mitura; I. I. Bekh; A. E. Lushkin4; L. G. Il’chenko; V. V. Il’chenko; G. Haindl
J. Vac. Sci. Technol. B 18, 3544–3548 (2000) https://doi.org/10.1116/1.1324648
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Actuation and internal friction of torsional nanomechanical silicon resonators
A. Olkhovets; S. Evoy; D. W. Carr; J. M. Parpia; H. G. Craighead
J. Vac. Sci. Technol. B 18, 3549–3551 (2000) https://doi.org/10.1116/1.1313571
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NANOIMPRINT

Novel alignment system for imprint lithography
D. L. White; O. R. Wood, II
J. Vac. Sci. Technol. B 18, 3552–3556 (2000) https://doi.org/10.1116/1.1319706
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Nanoimprint lithography at the 6 in. wafer scale
Babak Heidari; Ivan Maximov; Lars Montelius
J. Vac. Sci. Technol. B 18, 3557–3560 (2000) https://doi.org/10.1116/1.1326923
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Fabrication of quantum point contacts by imprint lithography and transport studies
Ingo Martini; Silke Kuhn; Martin Kamp; Lukas Worschech; Alfred Forchel; Dominik Eisert; Johannes Koeth; Rint Sijbesma
J. Vac. Sci. Technol. B 18, 3561–3563 (2000) https://doi.org/10.1116/1.1319705
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Quantitative analysis of the molding of nanostructures
H. Schift; C. David; J. Gobrecht; A. D’ Amore; D. Simoneta; W. Kaiser; M. Gabriel
J. Vac. Sci. Technol. B 18, 3564–3568 (2000) https://doi.org/10.1116/1.1324622
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Electron-beam fabrication of nonplanar templates for contact printing
K. W. Rhee; L. M. Shirey; P. I. Isaacson; C. F. Kornegay; W. J. Dressick; M.-S. Chen; S. L. Brandow
J. Vac. Sci. Technol. B 18, 3569–3571 (2000) https://doi.org/10.1116/1.1319704
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Step and flash imprint lithography: Template surface treatment and defect analysis
T. Bailey; B. J. Choi; M. Colburn; M. Meissl; S. Shaya; J. G. Ekerdt; S. V. Sreenivasan; C. G. Willson
J. Vac. Sci. Technol. B 18, 3572–3577 (2000) https://doi.org/10.1116/1.1324618
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Comparison of infrared frequency selective surfaces fabricated by direct-write electron-beam and bilayer nanoimprint lithographies
Irina Puscasu; G. Boreman; R. C. Tiberio; D. Spencer; R. R. Krchnavek
J. Vac. Sci. Technol. B 18, 3578–3581 (2000) https://doi.org/10.1116/1.1319838
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Master replication into thermosetting polymers for nanoimprinting
H. Schulz; D. Lyebyedyev; H.-C. Scheer; K. Pfeiffer; G. Bleidiessel; G. Grützner; J. Ahopelto
J. Vac. Sci. Technol. B 18, 3582–3585 (2000) https://doi.org/10.1116/1.1319821
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NANO-MEMS, BIO-NANO, MOLECULAR ELECTRONIC AND ATOMIC BEAM

Directed assembly of carbon nanotube electronic circuits by selective area chemical vapor deposition on prepatterned catalyst electrode structures
Y. Y. Wei; X. Fan; Gyula Eres
J. Vac. Sci. Technol. B 18, 3586–3589 (2000) https://doi.org/10.1116/1.1319709
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Real time pattern changing in atomic beam holography using phase shift by Stark effect
J. Fujita; S. Mitake; F. Shimizu
J. Vac. Sci. Technol. B 18, 3590–3593 (2000) https://doi.org/10.1116/1.1319685
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Lithographically defined nano and micro sensors using “float coating” of resist and electron beam lithography
H. Zhou; B. K. Chong; P. Stopford; G. Mills; A. Midha; L. Donaldson; J. M. R. Weaver
J. Vac. Sci. Technol. B 18, 3594–3599 (2000) https://doi.org/10.1116/1.1321271
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Microcalorimetry applications of a surface micromachined bolometer-type thermal probe
Mo-Huang Li; Yogesh B. Gianchandani
J. Vac. Sci. Technol. B 18, 3600–3603 (2000) https://doi.org/10.1116/1.1313581
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Novel multibridge-structured piezoelectric microdevice for scanning force microscopy
J. Chu; Z. Wang; R. Maeda; K. Kataoka; T. Itoh; T. Suga
J. Vac. Sci. Technol. B 18, 3604–3607 (2000) https://doi.org/10.1116/1.1319684
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Fabrication of diffractive optical elements for an integrated compact optical microelectromechanical system laser scanner
J. R. Wendt; T. W. Krygowski; G. A. Vawter; O. Blum; W. C. Sweatt; M. E. Warren; D. Reyes
J. Vac. Sci. Technol. B 18, 3608–3611 (2000) https://doi.org/10.1116/1.1313580
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Future of plasma etching for microelectronics: Challenges and opportunities
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