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REVIEW ARTICLE

Fluorinated amorphous carbon films for low permittivity interlevel dielectrics

Jeremy A. Theil

J. Vac. Sci. Technol. B 17, 2397–2410 (1999) https://doi.org/10.1116/1.591102

Abstract

View articletitled, Fluorinated amorphous carbon films for low permittivity interlevel dielectrics

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REGULAR ARTICLES

Scanning tunneling microscopy of passivated Au nanocrystals immobilized on Au(111) surfaces

L. E. Harrell; T. P. Bigioni; W. G. Cullen; R. L. Whetten; P.N. First

J. Vac. Sci. Technol. B 17, 2411–2416 (1999) https://doi.org/10.1116/1.591103

Abstract

View articletitled, Scanning tunneling microscopy of passivated Au nanocrystals immobilized on Au(111) surfaces

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Field induced local oxidation of Ti and Ti/Au structures by an atomic force microscope with diamond coated tips

R. J. M. Vullers; M. Ahlskog; M. Cannaerts; C. Van Haesendonck

J. Vac. Sci. Technol. B 17, 2417–2422 (1999) https://doi.org/10.1116/1.591104

Abstract

View articletitled, Field induced local oxidation of Ti and Ti/Au structures by an atomic force microscope with diamond coated tips

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In situ electrochemical atomic force microscopy study on Au(100)/Cd interface in sulfuric acid solution

Ruxandra Vidu; Shigeta Hara

J. Vac. Sci. Technol. B 17, 2423–2430 (1999) https://doi.org/10.1116/1.591105

Abstract

View articletitled, In situ electrochemical atomic force microscopy study on Au(100)/Cd interface in sulfuric acid solution

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Vapor-deposited gold film formation on highly oriented pyrolitic graphite. A transition from pseudo-two-dimensional branched island growth to continuous film formation

B. Blum; R. C. Salvarezza; A. J. Arvia

J. Vac. Sci. Technol. B 17, 2431–2438 (1999) https://doi.org/10.1116/1.591106

Abstract

View articletitled, Vapor-deposited gold film formation on highly oriented pyrolitic graphite. A transition from pseudo-two-dimensional branched island growth to continuous film formation

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Surface superstructure of ${Ar}^{+}$ -bombarded highly oriented pyrolytic graphite during recrystallization

B. An; S. Fukuyama; K. Yokogawa; M. Yoshimura

J. Vac. Sci. Technol. B 17, 2439–2442 (1999) https://doi.org/10.1116/1.591107

Abstract

View articletitled, Surface superstructure of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ar</mi><mrow><mi>+</mi></mrow></msup></math>-bombarded highly oriented pyrolytic graphite during recrystallization

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Minimizing damage during focused-ion-beam induced desorption of hydrogen

H. Fuhrmann; A. Candel; M. Döbeli; R. Mühle

J. Vac. Sci. Technol. B 17, 2443–2446 (1999) https://doi.org/10.1116/1.591108

Abstract

View articletitled, Minimizing damage during focused-ion-beam induced desorption of hydrogen

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Atomic force microscopy of the topochemical photopolymerization of diolefin crystals

Qingdao Zeng; Chen Wang; Chunli Bai; Yan Li; Xinjian Yan

J. Vac. Sci. Technol. B 17, 2447–2451 (1999) https://doi.org/10.1116/1.591109

Abstract

View articletitled, Atomic force microscopy of the topochemical photopolymerization of diolefin crystals

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Scratching on polystyrene thin film without bumps using atomic force microscopy

Futoshi Iwata; Tarou Matsumoto; Ryuhei Ogawa; Akira Sasaki

J. Vac. Sci. Technol. B 17, 2452–2456 (1999) https://doi.org/10.1116/1.591110

Abstract

View articletitled, Scratching on polystyrene thin film without bumps using atomic force microscopy

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Near-field polarization states and optical images in transmission mode through different surface structures

S. Wang

J. Vac. Sci. Technol. B 17, 2457–2461 (1999) https://doi.org/10.1116/1.591111

Abstract

View articletitled, Near-field polarization states and optical images in transmission mode through different surface structures

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Nanometric aperture arrays fabricated by wet and dry etching of silicon for near-field optical storage application

M. B. Lee; N. Atoda; K. Tsutsui; M. Ohtsu

J. Vac. Sci. Technol. B 17, 2462–2466 (1999) https://doi.org/10.1116/1.591112

Abstract

View articletitled, Nanometric aperture arrays fabricated by wet and dry etching of silicon for near-field optical storage application

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Ultrahigh density data storage in an organic film with a scanning tunneling microscope

S. M. Hou; X. Y. Zhao; C. Yang; Z. Q. Xue; W. J. Yang; H. Y. Chen

J. Vac. Sci. Technol. B 17, 2467–2470 (1999) https://doi.org/10.1116/1.591113

Abstract

View articletitled, Ultrahigh density data storage in an organic film with a scanning tunneling microscope

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Fabrication and magneto-transport and SQUID measurements of submicron spin-valve structures

Y. D. Park; D. Temple; K. B. Jung; D. Kumar; P. H. Holloway; S. J. Pearton

J. Vac. Sci. Technol. B 17, 2471–2475 (1999) https://doi.org/10.1116/1.591114

Abstract

View articletitled, Fabrication and magneto-transport and SQUID measurements of submicron spin-valve structures

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Nanoscale elemental imaging of semiconductor materials using focused ion beam secondary ion mass spectrometry

F. A. Stevie; S. W. Downey; S. R. Brown; T. L. Shofner; M. A. Decker; T. Dingle; L. Christman

J. Vac. Sci. Technol. B 17, 2476–2482 (1999) https://doi.org/10.1116/1.591115

Abstract

View articletitled, Nanoscale elemental imaging of semiconductor materials using focused ion beam secondary ion mass spectrometry

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Direct current and pulsed operation of contaminated liquid metal ion sources

R. T. Olson; J. A. Panitz

J. Vac. Sci. Technol. B 17, 2483–2487 (1999) https://doi.org/10.1116/1.591116

Abstract

View articletitled, Direct current and pulsed operation of contaminated liquid metal ion sources

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Comparison of metrology methods for quantifying the line edge roughness of patterned features

C. Nelson; S. C. Palmateer; A. R. Forte; T. M. Lyszczarz

J. Vac. Sci. Technol. B 17, 2488–2498 (1999) https://doi.org/10.1116/1.591117

Abstract

View articletitled, Comparison of metrology methods for quantifying the line edge roughness of patterned features

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Focus drilling and attenuated phase shift mask for subwavelength contact window printing using positive and negative resists

S. Pau; L. E. Trimble; J. W. Blatchford; G. P. Watson; J. Frackoviak; R. Cirelli; O. Nalamasu

J. Vac. Sci. Technol. B 17, 2499–2506 (1999) https://doi.org/10.1116/1.591118

Abstract

View articletitled, Focus drilling and attenuated phase shift mask for subwavelength contact window printing using positive and negative resists

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Electron beam lithography process for T- and $Γ$ -shaped gate fabrication using chemically amplified DUV resists and PMMA

Y. Chen; D. Macintyre; S. Thoms

J. Vac. Sci. Technol. B 17, 2507–2511 (1999) https://doi.org/10.1116/1.591119

Abstract

View articletitled, Electron beam lithography process for T- and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">Γ</mi></math>-shaped gate fabrication using chemically amplified DUV resists and PMMA

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Low-energy electron-beam effects on poly(methyl methacrylate) resist films

V. M. Bermudez

J. Vac. Sci. Technol. B 17, 2512–2518 (1999) https://doi.org/10.1116/1.591134

Abstract

View articletitled, Low-energy electron-beam effects on poly(methyl methacrylate) resist films

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Application of a thin-resist process for KrF imaging to 130 nm device fabrication

Tsukasa Azuma; Kenji Chiba; Daisuke Kawamura; Seiro Miyoshi; Tohru Ozaki; Hiroyoshi Kageyama

J. Vac. Sci. Technol. B 17, 2519–2523 (1999) https://doi.org/10.1116/1.591120

Abstract

View articletitled, Application of a thin-resist process for KrF imaging to 130 nm device fabrication

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Improvement of InGaP/GaAs heterointerface quality by controlling ${AsH}_{3}$ flow conditions

Yoshino K. Fukai; Fumiaki Hyuga; Takumi Nittono; Kazuo Watanabe; Hirohiko Sugahara

J. Vac. Sci. Technol. B 17, 2524–2529 (1999) https://doi.org/10.1116/1.591121

Abstract

View articletitled, Improvement of InGaP/GaAs heterointerface quality by controlling <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">AsH</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> flow conditions

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Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition

Chong-Yi Lee; Hung-Pin Shiao; Meng-Chyi Wu; Chyuan-Wei Chen

J. Vac. Sci. Technol. B 17, 2530–2535 (1999) https://doi.org/10.1116/1.591122

Abstract

View articletitled, Influence of growth temperature of InAsP/InP strained multiple quantum wells grown by metalorganic chemical vapor deposition

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Quantum mechanical tunneling through a biased double-cascaded barrier

J. M. Mohaidat; Riyad N. Bitar

J. Vac. Sci. Technol. B 17, 2536–2539 (1999) https://doi.org/10.1116/1.591123

Abstract

View articletitled, Quantum mechanical tunneling through a biased double-cascaded barrier

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Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures

J. Arbiol; F. Peiró; A. Cornet; K. Michelakis; A. Georgakilas

J. Vac. Sci. Technol. B 17, 2540–2544 (1999) https://doi.org/10.1116/1.591124

Abstract

View articletitled, Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures

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Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells

T. M. Levin; G. H. Jessen; F. A. Ponce; L. J. Brillson

J. Vac. Sci. Technol. B 17, 2545–2552 (1999) https://doi.org/10.1116/1.591125

Abstract

View articletitled, Depth-resolved electron-excited nanoscale-luminescence spectroscopy studies of defects near GaN/InGaN/GaN quantum wells

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Correlation between agglomeration of a thin film and reflow filling in a contact hole for sputtered Al films

S. Shingubara; H. Kotani; H. Sakaue; F. Nishiyama; T. Takahagi

J. Vac. Sci. Technol. B 17, 2553–2558 (1999) https://doi.org/10.1116/1.591126

Abstract

View articletitled, Correlation between agglomeration of a thin film and reflow filling in a contact hole for sputtered Al films

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Low resistance small metal contact for high temperature application

J. S. Kim; W. T. Kang; W. S. Lee; B. Y. Yoo; Y. C. Shin; T. H. Kim; K. Y. Lee; Y. J. Park; J. W. Park

J. Vac. Sci. Technol. B 17, 2559–2564 (1999) https://doi.org/10.1116/1.591127

Abstract

View articletitled, Low resistance small metal contact for high temperature application

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Microstructure of concentric ring patterns on Ta/Si(100)

H. Y. Sheng; D. Fujita; Z. C. Dong; H. Okamoto; T. Ohgi; H. Nejoh

J. Vac. Sci. Technol. B 17, 2565–2569 (1999) https://doi.org/10.1116/1.591128

Abstract

View articletitled, Microstructure of concentric ring patterns on Ta/Si(100)

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Characterization of ${CoSi}_{2}$ formation by x-ray photoelectron spectroscopy

Jin Zhao; Clive M. Jones; Derrick M. Poirier

J. Vac. Sci. Technol. B 17, 2570–2574 (1999) https://doi.org/10.1116/1.591129

Abstract

View articletitled, Characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CoSi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> formation by x-ray photoelectron spectroscopy

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Tribological behavior of TiC/DLC multilayers prepared on Ti–6Al–4V alloy by plasma-based ion implantation

Hongbing Ji; Lifang Xia; Xinxin Ma; Yue Sun; Mingren Sun

J. Vac. Sci. Technol. B 17, 2575–2580 (1999) https://doi.org/10.1116/1.591130

Abstract

View articletitled, Tribological behavior of TiC/DLC multilayers prepared on Ti–6Al–4V alloy by plasma-based ion implantation

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Novel process integration for reduction of subquarter-micron contact resistance

Victor Ku

J. Vac. Sci. Technol. B 17, 2581–2583 (1999) https://doi.org/10.1116/1.591131

Abstract

View articletitled, Novel process integration for reduction of subquarter-micron contact resistance

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Experimental and analytical study of seed layer resistance for copper damascene electroplating

E. K. Broadbent; E. J. McInerney; L. A. Gochberg; R. L. Jackson

J. Vac. Sci. Technol. B 17, 2584–2595 (1999) https://doi.org/10.1116/1.591132

Abstract

View articletitled, Experimental and analytical study of seed layer resistance for copper damascene electroplating

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Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications

T. Hussain; P. Chu; C. P. Wen; M. Circle; A. Gomez; T. Midford; T. Cisco

J. Vac. Sci. Technol. B 17, 2596–2599 (1999) https://doi.org/10.1116/1.591133

Abstract

View articletitled, Effect of material variations on performance of double-recessed gate power pseudomorphic high electron mobility transistors in monolithic microwave and millimeter wave integrated circuit applications

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Direct epitaxial growth of submicron-patterned SiC structures on Si(001)

Gyu-Chul Yi; G. Eres; D. H. Lowndes

J. Vac. Sci. Technol. B 17, 2600–2602 (1999) https://doi.org/10.1116/1.591029

Abstract

View articletitled, Direct epitaxial growth of submicron-patterned SiC structures on Si(001)

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Finite-element calculations of mechanical stresses induced by water adsorption/desorption in silicate glasses

Thomas Hoffmann; Philippe LeDuc; Vincent Senez

J. Vac. Sci. Technol. B 17, 2603–2609 (1999) https://doi.org/10.1116/1.591033

Abstract

View articletitled, Finite-element calculations of mechanical stresses induced by water adsorption/desorption in silicate glasses

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Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked “ $N–O–N$ ” gate dielectrics

H. Niimi; G. Lucovsky

J. Vac. Sci. Technol. B 17, 2610–2621 (1999) https://doi.org/10.1116/1.591034

Abstract

View articletitled, Monolayer-level controlled incorporation of nitrogen in ultrathin gate dielectrics using remote plasma processing: Formation of stacked “<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">N–O–N</mi></math>” gate dielectrics

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Buried heterostructure complex-coupled distributed feedback 1.55 μm lasers fabricated using dry etching processes and quaternary layer overgrowth

D. Söderström; S. Lourdudoss; C.-F. Carlström; S. Anand; M. Kahn; M. Kamp

J. Vac. Sci. Technol. B 17, 2622–2625 (1999) https://doi.org/10.1116/1.591035

Abstract

View articletitled, Buried heterostructure complex-coupled distributed feedback 1.55 μm lasers fabricated using dry etching processes and quaternary layer overgrowth

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Control of wet-etching thickness in the vertical cavity surface emitting laser structure by in situ laser reflectometry

H. K. Cho; J. Y. Lee; B. Lee; J. H. Baek; W. S. Han

J. Vac. Sci. Technol. B 17, 2626–2629 (1999) https://doi.org/10.1116/1.591036

Abstract

View articletitled, Control of wet-etching thickness in the vertical cavity surface emitting laser structure by in situ laser reflectometry

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Interferometry for end point prediction during plasma etching of various structures in complementary metal–oxide–semiconductor device fabrication

N. Layadi; S. J. Molloy; T. C. Esry; T. Lill; J. Trevor; M. N. Grimbergen; J. Chinn

J. Vac. Sci. Technol. B 17, 2630–2637 (1999) https://doi.org/10.1116/1.591037

Abstract

View articletitled, Interferometry for end point prediction during plasma etching of various structures in complementary metal–oxide–semiconductor device fabrication

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Abatement of perfluorocarbons with an inductively coupled plasma reactor

M. Y. Liao; K. Wong; J. P. McVittie; K. C. Saraswat

J. Vac. Sci. Technol. B 17, 2638–2643 (1999) https://doi.org/10.1116/1.591038

Abstract

View articletitled, Abatement of perfluorocarbons with an inductively coupled plasma reactor

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Selective plasma etching for contact holes using a fluorine-based chemistry with addition of $N_{2}$

Peter M. Meijer; Michel E. F. Roelofs; Bart S. Manders

J. Vac. Sci. Technol. B 17, 2644–2647 (1999) https://doi.org/10.1116/1.591039

Abstract

View articletitled, Selective plasma etching for contact holes using a fluorine-based chemistry with addition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>

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Sheath expansion in a drifting, nonuniform plasma

M. Keidar; I. G. Brown

J. Vac. Sci. Technol. B 17, 2648–2650 (1999) https://doi.org/10.1116/1.591040

Abstract

View articletitled, Sheath expansion in a drifting, nonuniform plasma

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BRIEF REPORTS AND COMMENTS

Anomalous scanning tunneling microscopy images of GaAs(110) surfaces due to tip-induced band bending

S. Aloni; G. Haase

J. Vac. Sci. Technol. B 17, 2651–2652 (1999) https://doi.org/10.1116/1.591041

Abstract

View articletitled, Anomalous scanning tunneling microscopy images of GaAs(110) surfaces due to tip-induced band bending

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Polycarbonate surface modified by argon cluster ion beams

J. Zemek; I. Yamada; G. Takaoka; J. Matsuo

J. Vac. Sci. Technol. B 17, 2653–2655 (1999) https://doi.org/10.1116/1.591139

Abstract

View articletitled, Polycarbonate surface modified by argon cluster ion beams

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RAPID COMMUNICATIONS

Quantitative surface area evaluation of rugged polycrystalline Si plate for dynamic random access memory capacitor by xenon adsorption

Hiroshi Yanazawa; Takuya Futase; Isao Suzuki

J. Vac. Sci. Technol. B 17, 2656–2659 (1999) https://doi.org/10.1116/1.591042

Abstract

View articletitled, Quantitative surface area evaluation of rugged polycrystalline Si plate for dynamic random access memory capacitor by xenon adsorption

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Trimethylamine: Novel source for low damage reactive ion beam etching of InP

C. F. Carlström; S. Anand; G. Landgren

J. Vac. Sci. Technol. B 17, 2660–2663 (1999) https://doi.org/10.1116/1.591043

Abstract

View articletitled, Trimethylamine: Novel source for low damage reactive ion beam etching of InP

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Destructive abatement of ${CF}_{4}$ and $C_{2} F_{6}$ via a plasma induced reaction with CaO

James L. Delattre; Todd L. Friedman; Angelica M. Stacy

J. Vac. Sci. Technol. B 17, 2664–2666 (1999) https://doi.org/10.1116/1.591044

Abstract

View articletitled, Destructive abatement of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mi mathvariant="normal">6</mi></mrow></msub></math> via a plasma induced reaction with CaO

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Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment

Ja-Soon Jang; Seong-Ju Park; Tae-Yeon Seong

J. Vac. Sci. Technol. B 17, 2667–2670 (1999) https://doi.org/10.1116/1.591045

Abstract

View articletitled, Formation of low resistance Pt ohmic contacts to p-type GaN using two-step surface treatment

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Fabrication of submicrometer regular arrays of pillars and helices

M. Malac; R. F. Egerton; M. J. Brett; B. Dick

J. Vac. Sci. Technol. B 17, 2671–2674 (1999) https://doi.org/10.1116/1.591046

Abstract

View articletitled, Fabrication of submicrometer regular arrays of pillars and helices

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Effect of Au overlayer on Ni contacts to p-type GaN

Jong Kyu Kim; Jong-Lam Lee; Jae Won Lee; Yong Jo Park; Taeil Kim

J. Vac. Sci. Technol. B 17, 2675–2678 (1999) https://doi.org/10.1116/1.591135

Abstract

View articletitled, Effect of Au overlayer on Ni contacts to p-type GaN

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PAPERS FROM THE 43RD INTERNATIONAL CONFERENCE ON ELECTRON, ION, AND PHOTON BEAM TECHNOLOGY AND NANOFABRICATION

ALIGNMENT, METROLOGY, AND TESTING

Sub-100 nm metrology using interferometrically produced fiducials

M. L. Schattenburg; C. Chen; P. N. Everett; J. Ferrera; P. Konkola; Henry I. Smith

J. Vac. Sci. Technol. B 17, 2692–2697 (1999) https://doi.org/10.1116/1.591047

Abstract

View articletitled, Sub-100 nm metrology using interferometrically produced fiducials

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Novel mask-wafer gap measurement scheme with nanometer-level detectivity

Euclid E. Moon; Patrick N. Everett; Mitchell W. Meinhold; Mark K. Mondol; Henry I. Smith

J. Vac. Sci. Technol. B 17, 2698–2702 (1999) https://doi.org/10.1116/1.591048

Abstract

View articletitled, Novel mask-wafer gap measurement scheme with nanometer-level detectivity

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A holographic phase-shifting interferometer technique to measure in-plane distortion

Michael H. Lim; Juan Ferrera; K. P. Pipe; Henry I. Smith

J. Vac. Sci. Technol. B 17, 2703–2706 (1999) https://doi.org/10.1116/1.591049

Abstract

View articletitled, A holographic phase-shifting interferometer technique to measure in-plane distortion

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High-throughput, high-spatial-frequency measurement of critical dimension variations using memory circuits as electrical test structures

X. Ouyang; Timothy L. Deeter; C. N. Berglund; Mark A. McCord; R. F. W. Pease

J. Vac. Sci. Technol. B 17, 2707–2713 (1999) https://doi.org/10.1116/1.591050

Abstract

View articletitled, High-throughput, high-spatial-frequency measurement of critical dimension variations using memory circuits as electrical test structures

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Thin film stress mapping using an integrated sensor

M. P. Schlax; A. F. Jachim; R. L. Engelstad; E. G. Lovell; J. A. Liddle; A. E. Novembre

J. Vac. Sci. Technol. B 17, 2714–2718 (1999) https://doi.org/10.1116/1.591051

Abstract

View articletitled, Thin film stress mapping using an integrated sensor

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Mechanical characterization of electron-beam resist using micromachined structures

L. Que; Y. B. Gianchandani; F. Cerrina

J. Vac. Sci. Technol. B 17, 2719–2722 (1999) https://doi.org/10.1116/1.591052

Abstract

View articletitled, Mechanical characterization of electron-beam resist using micromachined structures

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Correlation of atomic force microscopy sidewall roughness measurements with scanning electron microscopy line-edge roughness measurements on chemically amplified resists exposed by x-ray lithography

Geoffrey W. Reynolds; James W. Taylor

J. Vac. Sci. Technol. B 17, 2723–2729 (1999) https://doi.org/10.1116/1.591053

Abstract

View articletitled, Correlation of atomic force microscopy sidewall roughness measurements with scanning electron microscopy line-edge roughness measurements on chemically amplified resists exposed by x-ray lithography

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Control of localized access to circuitry through the backside using focused ion beam technology

Nicholas Antoniou; Mark Thompson; Jesse Salen; David Casey; Rama R. Goruganthu; Rose Ring; Jeff Birdsley; Glen Gilfeather

J. Vac. Sci. Technol. B 17, 2730–2733 (1999) https://doi.org/10.1116/1.590926

Abstract

View articletitled, Control of localized access to circuitry through the backside using focused ion beam technology

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ETCHING AND DEPOSITION

Fabrication of two-dimensional photonic crystal waveguides for 1.5 μm in silicon by deep anisotropic dry etching

T. Zijlstra; E. van der Drift; M. J. A. de Dood; E. Snoeks; A. Polman

J. Vac. Sci. Technol. B 17, 2734–2739 (1999) https://doi.org/10.1116/1.591054

Abstract

View articletitled, Fabrication of two-dimensional photonic crystal waveguides for 1.5 μm in silicon by deep anisotropic dry etching

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High-aspect-ratio nanophotonic components fabricated by ${Cl}_{2}$ reactive ion beam etching

W. J. Zubrzycki; G. A. Vawter; J. R. Wendt

J. Vac. Sci. Technol. B 17, 2740–2744 (1999) https://doi.org/10.1116/1.591055

Abstract

View articletitled, High-aspect-ratio nanophotonic components fabricated by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> reactive ion beam etching

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${Cl}_{2}$ plasma passivation of etch induced damage in GaAs and InGaAs with an inductively coupled plasma source

E. W. Berg; S. W. Pang

J. Vac. Sci. Technol. B 17, 2745–2749 (1999) https://doi.org/10.1116/1.591056

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> plasma passivation of etch induced damage in GaAs and InGaAs with an inductively coupled plasma source

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Inductively coupled plasma reactive ion etching of ${Al}_{x} {Ga}_{1−x} N$ for application in laser facet formation

F. A. Khan; L. Zhou; A. T. Ping; I. Adesida

J. Vac. Sci. Technol. B 17, 2750–2754 (1999) https://doi.org/10.1116/1.591057

Abstract

View articletitled, Inductively coupled plasma reactive ion etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> for application in laser facet formation

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${Cl}_{2}$ reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors

Ching-Hui Chen; Stacia Keller; Elaine D. Haberer; Lidong Zhang; Steven P. DenBaars; Evelyn L. Hu; Umesh K. Mishra; Yifeng Wu

J. Vac. Sci. Technol. B 17, 2755–2758 (1999) https://doi.org/10.1116/1.591058

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors

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High resolution reactive ion etching of GaN and etch-induced effects

R. Cheung; R. J. Reeves; B. Rong; S. A. Brown; E. J. M. Fakkeldij; E. van der Drift; M. Kamp

J. Vac. Sci. Technol. B 17, 2759–2763 (1999) https://doi.org/10.1116/1.591059

Abstract

View articletitled, High resolution reactive ion etching of GaN and etch-induced effects

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NANOJET: Nanostructuring via a downstream plasmajet

J. Voigt; B. Reinker; I. W. Rangelow; G. Mariotto; I. Shvets; P. Guethner; H. Löschner

J. Vac. Sci. Technol. B 17, 2764–2767 (1999) https://doi.org/10.1116/1.591060

Abstract

View articletitled, NANOJET: Nanostructuring via a downstream plasmajet

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Dry etching with gas chopping without rippled sidewalls

B. Volland; F. Shi; P. Hudek; H. Heerlein; Ivo. W. Rangelow

J. Vac. Sci. Technol. B 17, 2768–2771 (1999) https://doi.org/10.1116/1.591061

Abstract

View articletitled, Dry etching with gas chopping without rippled sidewalls

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Multilayer hexamethyldisiloxane film as bottom antireflective coating for ArF lithography

L. A. Wang; H. L. Chen

J. Vac. Sci. Technol. B 17, 2772–2775 (1999) https://doi.org/10.1116/1.591062

Abstract

View articletitled, Multilayer hexamethyldisiloxane film as bottom antireflective coating for ArF lithography

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ELECTRON AND ION BEAM SOURCES AND OPTICS

Plasma sources for electrons and ion beams

Ka-Ngo Leung

J. Vac. Sci. Technol. B 17, 2776–2778 (1999) https://doi.org/10.1116/1.591063

Abstract

View articletitled, Plasma sources for electrons and ion beams

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Characteristics of ion beams from a Penning source for focused ion beam applications

S. K. Guharay; E. Sokolovsky; J. Orloff

J. Vac. Sci. Technol. B 17, 2779–2782 (1999) https://doi.org/10.1116/1.591064

Abstract

View articletitled, Characteristics of ion beams from a Penning source for focused ion beam applications

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Maskless micro-ion-beam reduction lithography

V. V. Ngo; W. Barletta; R. Gough; Y. Lee; K. N. Leung; N. Zahir; D. Patterson

J. Vac. Sci. Technol. B 17, 2783–2790 (1999) https://doi.org/10.1116/1.591065

Abstract

View articletitled, Maskless micro-ion-beam reduction lithography

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Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources

L. C. Chao; B. K. Lee; C. J. Chi; J. Cheng; I. Chyr; A. J. Steckl

J. Vac. Sci. Technol. B 17, 2791–2794 (1999) https://doi.org/10.1116/1.591067

Abstract

View articletitled, Rare earth focused ion beam implantation utilizing Er and Pr liquid alloy ion sources

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Variable axis lens of mixed electrostatic and magnetic fields and its application in electron-beam lithography systems

Yan Zhao; Anjam Khursheed

J. Vac. Sci. Technol. B 17, 2795–2798 (1999) https://doi.org/10.1116/1.591068

Abstract

View articletitled, Variable axis lens of mixed electrostatic and magnetic fields and its application in electron-beam lithography systems

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Development of a projection imaging electron microscope with electrostatic lenses

M. Miyoshi; Y. Yamazaki; T. Nagai; I. Nagahama; K. Okumura

J. Vac. Sci. Technol. B 17, 2799–2802 (1999) https://doi.org/10.1116/1.591069

Abstract

View articletitled, Development of a projection imaging electron microscope with electrostatic lenses

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Space-charge-induced aberrations

G. I. Winograd; W. D. Meisburger; R. F. W. Pease

J. Vac. Sci. Technol. B 17, 2803–2807 (1999) https://doi.org/10.1116/1.591070

Abstract

View articletitled, Space-charge-induced aberrations

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Theory of Coulomb scattering in particle beams using Markov’s method

T. R. Groves

J. Vac. Sci. Technol. B 17, 2808–2813 (1999) https://doi.org/10.1116/1.591071

Abstract

View articletitled, Theory of Coulomb scattering in particle beams using Markov’s method

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Thin-film gated photocathodes for electron-beam lithography

Z. Pei; J. McCarthy; C. N. Berglund; T. P. H. Chang; M. Mankos; K. Y. Lee; M. L. Yu

J. Vac. Sci. Technol. B 17, 2814–2818 (1999) https://doi.org/10.1116/1.591072

Abstract

View articletitled, Thin-film gated photocathodes for electron-beam lithography

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Prototype negative electron affinity-based multibeam electron gun for lithography and microscopy

A. Baum; P. Arcuni; V. Aebi; S. Presley; M. Elder

J. Vac. Sci. Technol. B 17, 2819–2822 (1999) https://doi.org/10.1116/1.591073

Abstract

View articletitled, Prototype negative electron affinity-based multibeam electron gun for lithography and microscopy

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Measuring electron-beam landing angle in real time

M. A. Sturans; J. G. Hartley; R. A. Kendall

J. Vac. Sci. Technol. B 17, 2823–2826 (1999) https://doi.org/10.1116/1.591074

Abstract

View articletitled, Measuring electron-beam landing angle in real time

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Design and implementation of a detector for on-axis electrons for enabling enhanced imaging of topographical structures

Harry Munack; Walter Kögler; Holger Baumgarten; Christian Rübekohl; Pavel Adamec; Ralf Degenhardt; Hans-Peter Feuerbaum; Dieter Winkler

J. Vac. Sci. Technol. B 17, 2827–2829 (1999) https://doi.org/10.1116/1.591075

Abstract

View articletitled, Design and implementation of a detector for on-axis electrons for enabling enhanced imaging of topographical structures

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Field size versus column shortness in high throughput electron beam lithography

L. Han; R. F. W. Pease; W. D. Meisburger; G. I. Winograd; M. A. McCord

J. Vac. Sci. Technol. B 17, 2830–2835 (1999) https://doi.org/10.1116/1.591076

Abstract

View articletitled, Field size versus column shortness in high throughput electron beam lithography

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Lateral pn-junctions as a novel electron detector for microcolumn systems

G. S. Fritz; H. S. Fresser; F. E. Prins; D. P. Kern

J. Vac. Sci. Technol. B 17, 2836–2839 (1999) https://doi.org/10.1116/1.591078

Abstract

View articletitled, Lateral pn-junctions as a novel electron detector for microcolumn systems

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ELECTRON BEAM LITHOGRAPHY

Projection reduction exposure with variable axis immersion lenses: Next generation lithography

J. Vac. Sci. Technol. B 17, 2840–2846 (1999) https://doi.org/10.1116/1.591080

Abstract

View articletitled, Projection reduction exposure with variable axis immersion lenses: Next generation lithography

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PREVAIL: Theory of the proof of concept column electron optics

W. Stickel; G. O. Langner

J. Vac. Sci. Technol. B 17, 2847–2850 (1999) https://doi.org/10.1116/1.591081

Abstract

View articletitled, PREVAIL: Theory of the proof of concept column electron optics

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PREVAIL: Operation of the electron optics proof-of-concept system

M. S. Gordon; J. E. Lieberman; P. F. Petric; C. F. Robinson; W. Stickel

J. Vac. Sci. Technol. B 17, 2851–2855 (1999) https://doi.org/10.1116/1.591082

Abstract

View articletitled, PREVAIL: Operation of the electron optics proof-of-concept system

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High emittance source for the PREVAIL projection lithography system

S. D. Golladay; R. A. Kendall; S. K. Doran

J. Vac. Sci. Technol. B 17, 2856–2859 (1999) https://doi.org/10.1116/1.591083

Abstract

View articletitled, High emittance source for the PREVAIL projection lithography system

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Proximity effect correction by the GHOST method using a scattering stencil mask

Hiroshi Yamashita; Eiichi Nomura; Shoko Manako; Hideo Kobinata; Ken Nakajima; Hiroshi Nozue

J. Vac. Sci. Technol. B 17, 2860–2863 (1999) https://doi.org/10.1116/1.591084

Abstract

View articletitled, Proximity effect correction by the GHOST method using a scattering stencil mask

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Stencil reticle development for electron beam projection system

S. Kawata; N. Katakura; S. Takahashi; K. Uchikawa

J. Vac. Sci. Technol. B 17, 2864–2867 (1999) https://doi.org/10.1116/1.591085

Abstract

View articletitled, Stencil reticle development for electron beam projection system

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Pattern displacement measurements for Si stencil reticles

K. Uchikawa; S. Takahashi; N. Katakura; T. Oshino; S. Kawata; T. Yamaguchi

J. Vac. Sci. Technol. B 17, 2868–2872 (1999) https://doi.org/10.1116/1.591086

Abstract

View articletitled, Pattern displacement measurements for Si stencil reticles

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Characteristics for negative and positive tone resists with direct write electron beam and SCALPEL exposure systems

Mitsuru Sato; L. E. Ocala; A. E. Novembre; Katsumi Ohmori; Kiyoshi Ishikawa; Katsuhiko Katsumata; Toshimasa Nakayama

J. Vac. Sci. Technol. B 17, 2873–2877 (1999) https://doi.org/10.1116/1.591087

Abstract

View articletitled, Characteristics for negative and positive tone resists with direct write electron beam and SCALPEL exposure systems

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Mechanical and thermal modeling of the SCALPEL mask

C. J. Martin; W. H. Semke; G. A. Dicks; R. L. Engelstad; E. G. Lovell; J. A. Liddle; A. E. Novembre

J. Vac. Sci. Technol. B 17, 2878–2882 (1999) https://doi.org/10.1116/1.591088

Abstract

View articletitled, Mechanical and thermal modeling of the SCALPEL mask

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Finite element analysis of SCALPEL wafer heating

Byungkyu Kim; Roxann L. Engelstad; Edward G. Lovell; Stuart T. Stanton; J. Alexander Liddle; Gregg M. Gallatin

J. Vac. Sci. Technol. B 17, 2883–2887 (1999) https://doi.org/10.1116/1.591089

Abstract

View articletitled, Finite element analysis of SCALPEL wafer heating

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Determination of the possible magnitude of the charging effect in a SCALPEL mask membrane

M. M. Mkrtchyan; A. S. Gasparyan; K. A. Mkhoyan; J. A. Liddle; A. E. Novembre

J. Vac. Sci. Technol. B 17, 2888–2892 (1999) https://doi.org/10.1116/1.591090

Abstract

View articletitled, Determination of the possible magnitude of the charging effect in a SCALPEL mask membrane

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Charging and discharging of electron beam resist films

M. Bai; R. F. W. Pease; C. Tanasa; M. A. McCord; D. S. Pickard; D. Meisburger

J. Vac. Sci. Technol. B 17, 2893–2896 (1999) https://doi.org/10.1116/1.591091

Abstract

View articletitled, Charging and discharging of electron beam resist films

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Low energy electron-beam proximity projection lithography: Discovery of a missing link

Takao Utsumi

J. Vac. Sci. Technol. B 17, 2897–2902 (1999) https://doi.org/10.1116/1.591092

Abstract

View articletitled, Low energy electron-beam proximity projection lithography: Discovery of a missing link

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New three dimensional simulator for low energy (∼1 keV) electron beam systems

Yongjae Lee; Woojin Lee; Kukjin Chun; Hoseob Kim

J. Vac. Sci. Technol. B 17, 2903–2906 (1999) https://doi.org/10.1116/1.591093

Abstract

View articletitled, New three dimensional simulator for low energy (∼1 keV) electron beam systems

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EB-X3: New electron-beam x-ray mask writer

Tetsuo Morosawa; Kenichi Saito; Yuji Takeda; Tatsuya Kunioka; Akira Shimizu; Junichi Kato; Tadahito Matsuda; Youichi Kuriyama; Yoshinori Nakayama; Yasuji Matsui

J. Vac. Sci. Technol. B 17, 2907–2911 (1999) https://doi.org/10.1116/1.591094

Abstract

View articletitled, EB-X3: New electron-beam x-ray mask writer

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Electron optical system for the x-ray mask writer EB-X3

Kenichi Saito; Junichi Kato; Akira Shimizu; Hirofumi Morita; Tadahito Matsuda; Yoshinori Nakayama

J. Vac. Sci. Technol. B 17, 2912–2916 (1999) https://doi.org/10.1116/1.591095

Abstract

View articletitled, Electron optical system for the x-ray mask writer EB-X3

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XY stage driven by ultrasonic linear motors for the electron-beam x-ray mask writer EB-X3

T. Kunioka; Y. Takeda; T. Matsuda; N. Shimazu; Y. Nakayama

J. Vac. Sci. Technol. B 17, 2917–2920 (1999) https://doi.org/10.1116/1.591096

Abstract

View articletitled, XY stage driven by ultrasonic linear motors for the electron-beam x-ray mask writer EB-X3

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Influence of the mask-scattered electrons in the cell-projection lithography

M. Kotera; K. Yamaguchi; T. Okagawa; K. Matsuoka; Y. Kojima; M. Yamabe

J. Vac. Sci. Technol. B 17, 2921–2926 (1999) https://doi.org/10.1116/1.591097

Abstract

View articletitled, Influence of the mask-scattered electrons in the cell-projection lithography

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Raster shaped beam pattern generation

S. A. Rishton; J. K. Varner; L. H. Veneklasen; V. Boegli; A. L. Sagle; U. Hofmann,; H. Kao; W. Wang

J. Vac. Sci. Technol. B 17, 2927–2931 (1999) https://doi.org/10.1116/1.591098

Abstract

View articletitled, Raster shaped beam pattern generation

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Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system

J. G. Hartley; T. R. Groves

J. Vac. Sci. Technol. B 17, 2932–2935 (1999) https://doi.org/10.1116/1.590928

Abstract

View articletitled, Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system

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Reduction of long range fogging effect in a high acceleration voltage electron beam mask writing system

Munehiro Ogasawara; Naoharu Shimomura; Jun Takamatsu; Shusuke Yoshitake; Kenji Ooki; Noriaki Nakayamada; Humiyuki Okabe; Toru Tojo; Tadahiro Takigawa

J. Vac. Sci. Technol. B 17, 2936–2939 (1999) https://doi.org/10.1116/1.590927

Abstract

View articletitled, Reduction of long range fogging effect in a high acceleration voltage electron beam mask writing system

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Fundamental performance of state-of-the-art proximity effect correction methods

Uli Hofmann; Richard Crandall; Leslie Johnson

J. Vac. Sci. Technol. B 17, 2940–2944 (1999) https://doi.org/10.1116/1.590929

Abstract

View articletitled, Fundamental performance of state-of-the-art proximity effect correction methods

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Contrast limitations in electron-beam lithography

Richard Crandall; Uli Hofmann; Richard L. Lozes

J. Vac. Sci. Technol. B 17, 2945–2947 (1999) https://doi.org/10.1116/1.590930

Abstract

View articletitled, Contrast limitations in electron-beam lithography

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EMERGING TECHNOLOGIES

New miniaturized tunneling-based gyro for inertial measurement applications

R. L. Kubena; D. J. Vickers-Kirby; R. J. Joyce; F. P. Stratton

J. Vac. Sci. Technol. B 17, 2948–2952 (1999) https://doi.org/10.1116/1.590931

Abstract

View articletitled, New miniaturized tunneling-based gyro for inertial measurement applications

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Electric-field modified atomic beam holography

Jun-ichi Fujita; Tetsuo Kishimoto; Satosi Mitake; Fujio Shimizu

J. Vac. Sci. Technol. B 17, 2953–2956 (1999) https://doi.org/10.1116/1.590932

Abstract

View articletitled, Electric-field modified atomic beam holography

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Fabrication of a new broadband waveguide polarizer with a double-layer 190 nm period metal-gratings using nanoimprint lithography

Jian Wang; Steven Schablitsky; Zhaoning Yu; Wei Wu; Stephen Y. Chou

J. Vac. Sci. Technol. B 17, 2957–2960 (1999) https://doi.org/10.1116/1.590933

Abstract

View articletitled, Fabrication of a new broadband waveguide polarizer with a double-layer 190 nm period metal-gratings using nanoimprint lithography

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Large scale nanolithography using nanoimprint lithography

Babak Heidari; Ivan Maximov; Eva-Lena Sarwe; Lars Montelius

J. Vac. Sci. Technol. B 17, 2961–2964 (1999) https://doi.org/10.1116/1.590934

Abstract

View articletitled, Large scale nanolithography using nanoimprint lithography

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Patterning curved surfaces: Template generation by ion beam proximity lithography and relief transfer by step and flash imprint lithography

P. Ruchhoeft; M. Colburn; B. Choi; H. Nounu; S. Johnson; T. Bailey; S. Damle; M. Stewart; J. Ekerdt; S. V. Sreenivasan; J. C. Wolfe; C. G. Willson

J. Vac. Sci. Technol. B 17, 2965–2969 (1999) https://doi.org/10.1116/1.590935

Abstract

View articletitled, Patterning curved surfaces: Template generation by ion beam proximity lithography and relief transfer by step and flash imprint lithography

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EUV LITHOGRAPHY

Demonstration of pattern transfer into sub-100 nm polysilicon line/space features patterned with extreme ultraviolet lithography

G. F. Cardinale; C. C. Henderson; J. E. M. Goldsmith; P. J. S. Mangat; J. Cobb; S. D. Hector

J. Vac. Sci. Technol. B 17, 2970–2974 (1999) https://doi.org/10.1116/1.590936

Abstract

View articletitled, Demonstration of pattern transfer into sub-100 nm polysilicon line/space features patterned with extreme ultraviolet lithography

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Extreme ultraviolet lithography at Carl Zeiss: Manufacturing and metrology of aspheric surfaces with angstrom accuracy

H. Handschuh; J. Fröschke; M. Jülich; M. Mayer; M. Weiser; G. Seitz

J. Vac. Sci. Technol. B 17, 2975–2977 (1999) https://doi.org/10.1116/1.590937

Abstract

View articletitled, Extreme ultraviolet lithography at Carl Zeiss: Manufacturing and metrology of aspheric surfaces with angstrom accuracy

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EUCLIDES: European EUVL Program

Jos P. H. Benschop; Anton J. J. van Dijsseldonk; Winfried M. Kaiser; David C. Ockwell

J. Vac. Sci. Technol. B 17, 2978–2981 (1999) https://doi.org/10.1116/1.590938

Abstract

View articletitled, EUCLIDES: European EUVL Program

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Extreme ultraviolet interferometric measurements of diffraction-limited optics

Kenneth A. Goldberg; Patrick Naulleau; Jeffrey Bokor

J. Vac. Sci. Technol. B 17, 2982–2986 (1999) https://doi.org/10.1116/1.590939

Abstract

View articletitled, Extreme ultraviolet interferometric measurements of diffraction-limited optics

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Interferometric at-wavelength flare characterization of extreme ultraviolet optical systems

Patrick Naulleau; Kenneth A. Goldberg; Eric M. Gullikson; Jeffrey Bokor

J. Vac. Sci. Technol. B 17, 2987–2991 (1999) https://doi.org/10.1116/1.590940

Abstract

View articletitled, Interferometric at-wavelength flare characterization of extreme ultraviolet optical systems

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Image formation in extreme ultraviolet lithography and numerical aperture effects

Srinivas B. Bollepalli; M. Khan; Franco Cerrina

J. Vac. Sci. Technol. B 17, 2992–2997 (1999) https://doi.org/10.1116/1.590941

Abstract

View articletitled, Image formation in extreme ultraviolet lithography and numerical aperture effects

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Peak and integrated reflectivity, wavelength and gamma optimization of Mo/Si, and Mo/Be multilayer, multielement optics for extreme ultraviolet lithography

R. Stuik; E. Louis; A. E. Yakshin; P. C. Görts; E. L. G. Maas; F. Bijkerk; D. Schmitz; F. Scholze; G. Ulm; M. Haidl

J. Vac. Sci. Technol. B 17, 2998–3002 (1999) https://doi.org/10.1116/1.590942

Abstract

View articletitled, Peak and integrated reflectivity, wavelength and gamma optimization of Mo/Si, and Mo/Be multilayer, multielement optics for extreme ultraviolet lithography

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Technique for rapid at-wavelength inspection of extreme ultraviolet mask blanks

S. J. Spector; D. L. White; D. M. Tennant; L. E. Ocola; A. E. Novembre; M. L. Peabody; O. R. Wood, II

J. Vac. Sci. Technol. B 17, 3003–3008 (1999) https://doi.org/10.1116/1.590943

Abstract

View articletitled, Technique for rapid at-wavelength inspection of extreme ultraviolet mask blanks

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Actinic detection of sub-100 nm defects on extreme ultraviolet lithography mask blanks

Seongtae Jeong; Lewis Johnson; Seno Rekawa; Chris C. Walton; Shon T. Prisbrey; Edita Tejnil; James H. Underwood; Jeffrey Bokor

J. Vac. Sci. Technol. B 17, 3009–3013 (1999) https://doi.org/10.1116/1.590944

Abstract

View articletitled, Actinic detection of sub-100 nm defects on extreme ultraviolet lithography mask blanks

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Nondestructive picosecond-ultrasonic characterization of Mo/Si extreme ultraviolet multilayer reflection coatings

Nen-Wen Pu; Jeffrey Bokor; Seongtae Jeong; Ri-An Zhao

J. Vac. Sci. Technol. B 17, 3014–3018 (1999) https://doi.org/10.1116/1.590945

Abstract

View articletitled, Nondestructive picosecond-ultrasonic characterization of Mo/Si extreme ultraviolet multilayer reflection coatings

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Extreme ultraviolet mask defect simulation

Tom Pistor; Andrew Neureuther

J. Vac. Sci. Technol. B 17, 3019–3023 (1999) https://doi.org/10.1116/1.590946

Abstract

View articletitled, Extreme ultraviolet mask defect simulation

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Method for compensation of extreme-ultraviolet multilayer defects

A. K. Ray-Chaudhuri; G. Cardinale; A. Fisher; P.-Y. Yan; D. W. Sweeney

J. Vac. Sci. Technol. B 17, 3024–3028 (1999) https://doi.org/10.1116/1.590947

Abstract

View articletitled, Method for compensation of extreme-ultraviolet multilayer defects

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Extreme ultraviolet lithography mask patterning and printability studies with a Ta-based absorber

P. J. S. Mangat; S. D. Hector; M. A. Thompson; W. J. Dauksher; J. Cobb; K. D. Cummings; D. P. Mancini; D. J. Resnick; G. Cardinale; C. Henderson; P. Kearney; M. Wedowski

J. Vac. Sci. Technol. B 17, 3029–3033 (1999) https://doi.org/10.1116/1.590948

Abstract

View articletitled, Extreme ultraviolet lithography mask patterning and printability studies with a Ta-based absorber

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System performance modeling of extreme ultraviolet lithographic thermal issues

P. A. Spence; S. E. Gianoulakis; C. D. Moen; M. P. Kanouff; A. Fisher; A. K. Ray-Chaudhuri

J. Vac. Sci. Technol. B 17, 3034–3038 (1999) https://doi.org/10.1116/1.590949

Abstract

View articletitled, System performance modeling of extreme ultraviolet lithographic thermal issues

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Characterization of the manufacturability of ultrathin resist

Khanh B. Nguyen; Chris Lyons; Jeff Schefske; Chris Pike; Khoi Phan; Paul King; Harry Levinson; Scott Bell; Uzodinma Okoroanyanwu

J. Vac. Sci. Technol. B 17, 3039–3042 (1999) https://doi.org/10.1116/1.590950

Abstract

View articletitled, Characterization of the manufacturability of ultrathin resist

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Synchrotron light as a source for extreme ultraviolet lithography

D. C. Ockwell; N. C. E. Crosland; V. C. Kempson

J. Vac. Sci. Technol. B 17, 3043–3046 (1999) https://doi.org/10.1116/1.590951

Abstract

View articletitled, Synchrotron light as a source for extreme ultraviolet lithography

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Maskless extreme ultraviolet lithography

Neha Choksi; D. S. Pickard; Mark McCord; R. F. W. Pease; Yashesh Shroff; Yijian Chen; William Oldham; David Markle

J. Vac. Sci. Technol. B 17, 3047–3051 (1999) https://doi.org/10.1116/1.590952

Abstract

View articletitled, Maskless extreme ultraviolet lithography

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Nanolithography using extreme ultraviolet lithography interferometry: 19 nm lines and spaces

H. H. Solak; D. He; W. Li; F. Cerrina

J. Vac. Sci. Technol. B 17, 3052–3057 (1999) https://doi.org/10.1116/1.590953

Abstract

View articletitled, Nanolithography using extreme ultraviolet lithography interferometry: 19 nm lines and spaces

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FOCUSED ION BEAM TECHNOLOGY

Gas assisted etching of copper with focused ion beams

K. Edinger

J. Vac. Sci. Technol. B 17, 3058–3062 (1999) https://doi.org/10.1116/1.590954

Abstract

View articletitled, Gas assisted etching of copper with focused ion beams

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Damage generation and removal in the ${Ga}^{+}$ focused ion beam micromachining of GaN for photonic applications

Irving Chyr; Boon Lee; L. C. Chao; A. J. Steckl

J. Vac. Sci. Technol. B 17, 3063–3067 (1999) https://doi.org/10.1116/1.590955

Abstract

View articletitled, Damage generation and removal in the <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup></math> focused ion beam micromachining of GaN for photonic applications

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Thin oxides on passivated silicon irradiated by focused ion beams

H. Fuhrmann; M. Döbeli; R. Kötz; R. Mühle; B. Schnyder

J. Vac. Sci. Technol. B 17, 3068–3071 (1999) https://doi.org/10.1116/1.590956

Abstract

View articletitled, Thin oxides on passivated silicon irradiated by focused ion beams

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Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system

Junichi Yanagisawa; Takayuki Goto; Takuo Hada; Masaya Nakai; Fujio Wakaya; Yoshihiko Yuba; Kenji Gamo

J. Vac. Sci. Technol. B 17, 3072–3074 (1999) https://doi.org/10.1116/1.590985

Abstract

View articletitled, Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system

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Combined focused ion beam deposition system and scanning probe microscope for metal nanostructure fabrication and characterization

R. G. Woodham; H. Ahmed

J. Vac. Sci. Technol. B 17, 3075–3079 (1999) https://doi.org/10.1116/1.590957

Abstract

View articletitled, Combined focused ion beam deposition system and scanning probe microscope for metal nanostructure fabrication and characterization

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Surface diagnostics of dry etched III–V semiconductor samples using focused ion beam and secondary ion mass spectrometry

Siyuan Yu; Peter Heard; Bulent Cakmak; R. V. Penty; I. H. White

J. Vac. Sci. Technol. B 17, 3080–3084 (1999) https://doi.org/10.1116/1.590958

Abstract

View articletitled, Surface diagnostics of dry etched III–V semiconductor samples using focused ion beam and secondary ion mass spectrometry

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Depth control of focused ion-beam milling from a numerical model of the sputter process

Michael J. Vasile; Jushan Xie; Raja Nassar

J. Vac. Sci. Technol. B 17, 3085–3090 (1999) https://doi.org/10.1116/1.590959

Abstract

View articletitled, Depth control of focused ion-beam milling from a numerical model of the sputter process

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ION BEAM LITHOGRAPHY

Ion projection lithography: International development program

Rainer Kaesmaier; Hans Löschner; Gerhard Stengl; John C. Wolfe; Paul Ruchhoeft

J. Vac. Sci. Technol. B 17, 3091–3097 (1999) https://doi.org/10.1116/1.590960

Abstract

View articletitled, Ion projection lithography: International development program

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Experimental results of the stochastic Coulomb interaction in ion projection lithography

P. W. H. de Jager; G. Derksen; B. Mertens; E. Cekan; G. Lammer; H. Vonach; H. Buschbeck; M. Zeininger; C. Horner; H. Löschner; G. Stengl; A. J. Bleeker; J. Benschop; F. Shi; B. Volland; P. Hudek; H. Heerlein; I. W. Rangelow; R. Kaesmaier

J. Vac. Sci. Technol. B 17, 3098–3106 (1999) https://doi.org/10.1116/1.590961

Abstract

View articletitled, Experimental results of the stochastic Coulomb interaction in ion projection lithography

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Comparison of silicon stencil mask distortion measurements with finite element analysis

A. Ehrmann; T. Struck; A. Chalupka; E. Haugeneder; H. Löschner; J. Butschke; M. Irmscher; F. Letzkus; R. Springer; A. Degen; I. W. Rangelow; F. Shi; E. Sossna; B. Volland; R. Engelstad; E. Lovell; R. Tejeda

J. Vac. Sci. Technol. B 17, 3107–3111 (1999) https://doi.org/10.1116/1.590962

Abstract

View articletitled, Comparison of silicon stencil mask distortion measurements with finite element analysis

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Modeling of edge roughness in ion projection lithography

Wolfgang Henke; Michael Torkler

J. Vac. Sci. Technol. B 17, 3112–3118 (1999) https://doi.org/10.1116/1.590963

Abstract

View articletitled, Modeling of edge roughness in ion projection lithography

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Minimum ion-beam exposure-dose determination for chemically amplified resist from printed dot matrices

W. H. Bruenger; M. Torkler; M. Weiss; H. Löschner; K. Leung; Y. Lee; P. Hudek; I. W. Rangelow; G. Stangl; W. Fallmann

J. Vac. Sci. Technol. B 17, 3119–3121 (1999) https://doi.org/10.1116/1.590964

Abstract

View articletitled, Minimum ion-beam exposure-dose determination for chemically amplified resist from printed dot matrices

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Comparative evaluation of electron-beam sensitive single layer top surface imaging and bilayer chemical amplification of resist lines process for stencil mask making

K. Elian; M. Irmscher; J. Butschke; F. Letzkus; C. Reuter; R. Springer

J. Vac. Sci. Technol. B 17, 3122–3126 (1999) https://doi.org/10.1116/1.590965

Abstract

View articletitled, Comparative evaluation of electron-beam sensitive single layer top surface imaging and bilayer chemical amplification of resist lines process for stencil mask making

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Directly sputtered stress-compensated carbon protective layer for silicon stencil masks

J. Vac. Sci. Technol. B 17, 3127–3131 (1999) https://doi.org/10.1116/1.590966

Abstract

View articletitled, Directly sputtered stress-compensated carbon protective layer for silicon stencil masks

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Very high-resolution focused ion beam nanolithography improvement: A new three-dimensional patterning capability

J. Gierak; E. Cambril; M. Schneider; C. David; D. Mailly; J. Flicstein; G. Schmid

J. Vac. Sci. Technol. B 17, 3132–3136 (1999) https://doi.org/10.1116/1.590967

Abstract

View articletitled, Very high-resolution focused ion beam nanolithography improvement: A new three-dimensional patterning capability

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MASKS

MARS: Femtosecond laser mask advanced repair system in manufacturing

Richard Haight; Dennis Hayden; Peter Longo; Timothy Neary; Alfred Wagner

J. Vac. Sci. Technol. B 17, 3137–3143 (1999) https://doi.org/10.1116/1.590968

Abstract

View articletitled, MARS: Femtosecond laser mask advanced repair system in manufacturing

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Characteristics of chemical vapor deposition diamond films for x-ray mask substrates

Cameron J. Brooks; Lynn A. Powers; R. E. Acosta; Darius Moily; Firooz Faili; John A. Herb

J. Vac. Sci. Technol. B 17, 3144–3148 (1999) https://doi.org/10.1116/1.590969

Abstract

View articletitled, Characteristics of chemical vapor deposition diamond films for x-ray mask substrates

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Highly accurate cell projection mask for applications to sub-130 nm patterning

Cheol-Kyun Kim; Cheol Hur; Young-Sik Kim; Ki-Ho Baik; Il-Hyun Choi

J. Vac. Sci. Technol. B 17, 3149–3153 (1999) https://doi.org/10.1116/1.590970

Abstract

View articletitled, Highly accurate cell projection mask for applications to sub-130 nm patterning

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Lateral growth of focused ion beam deposited platinum for stencil mask repair

Anthony J. DeMarco; John Melngailis

J. Vac. Sci. Technol. B 17, 3154–3157 (1999) https://doi.org/10.1116/1.590971

Abstract

View articletitled, Lateral growth of focused ion beam deposited platinum for stencil mask repair

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NANOTECHNOLOGY: DEVICES AND FABRICATION

Progress toward a 30 nm silicon metal–oxide–semiconductor gate technology

D. M. Tennant; G. L. Timp; L. E. Ocola; M. Green; T. Sorsch; A. Kornblit; F. Klemens; R. Kleiman; Y. Kim; W. Timp

J. Vac. Sci. Technol. B 17, 3158–3163 (1999) https://doi.org/10.1116/1.590972

Abstract

View articletitled, Progress toward a 30 nm silicon metal–oxide–semiconductor gate technology

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Lithography for sub-60 nm resist nanostructures

L. E. Ocola; D. Tennant; G. Timp; A. Novembre

J. Vac. Sci. Technol. B 17, 3164–3167 (1999) https://doi.org/10.1116/1.590973

Abstract

View articletitled, Lithography for sub-60 nm resist nanostructures

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Fabrication of patterned media for high density magnetic storage

C. A. Ross; Henry I. Smith; T. Savas; M. Schattenburg; M. Farhoud; M. Hwang; M. Walsh; M. C. Abraham; R. J. Ram

J. Vac. Sci. Technol. B 17, 3168–3176 (1999) https://doi.org/10.1116/1.590974

Abstract

View articletitled, Fabrication of patterned media for high density magnetic storage

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Patterning of planar magnetic nanostructures by ion irradiation

T. Devolder; C. Chappert; Y. Chen; E. Cambril; H. Launois; H. Bernas; J. Ferré; J. P. Jamet

J. Vac. Sci. Technol. B 17, 3177–3181 (1999) https://doi.org/10.1116/1.590975

Abstract

View articletitled, Patterning of planar magnetic nanostructures by ion irradiation

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Fabrication of 200 nm period nanomagnet arrays using interference lithography and a negative resist

Maya Farhoud; Juan Ferrera; Anthony J. Lochtefeld; T. E. Murphy; Mark L. Schattenburg; J. Carter; C. A. Ross; Henry I. Smith

J. Vac. Sci. Technol. B 17, 3182–3185 (1999) https://doi.org/10.1116/1.590976

Abstract

View articletitled, Fabrication of 200 nm period nanomagnet arrays using interference lithography and a negative resist

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Development of chemically assisted dry etching methods for magnetic device structures

K. B. Jung; H. Cho; K. P. Lee; J. Marburger; F. Sharifi; R. K. Singh; D. Kumar; K. H. Dahmen; S. J. Pearton

J. Vac. Sci. Technol. B 17, 3186–3189 (1999) https://doi.org/10.1116/1.590977

Abstract

View articletitled, Development of chemically assisted dry etching methods for magnetic device structures

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Perpendicular patterned media in an ${(Al}_{0.9} {Ga}_{0.1})_{2} O_{3} /GaAs$ substrate for magnetic storage

Joyce Wong; Axel Scherer; Mladen Barbic; Sheldon Schultz

J. Vac. Sci. Technol. B 17, 3190–3196 (1999) https://doi.org/10.1116/1.590978

Abstract

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Lithographically induced self-assembly of periodic polymer micropillar arrays

Stephen Y. Chou; Lei Zhuang

J. Vac. Sci. Technol. B 17, 3197–3202 (1999) https://doi.org/10.1116/1.590979

Abstract

View articletitled, Lithographically induced self-assembly of periodic polymer micropillar arrays

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Patterning of self-assembled monolayers with lateral dimensions of 0.15 μm using advanced lithography

Xiao M. Yang; Richard D. Peters; Tae K. Kim; Paul F. Nealey

J. Vac. Sci. Technol. B 17, 3203–3207 (1999) https://doi.org/10.1116/1.590980

Abstract

View articletitled, Patterning of self-assembled monolayers with lateral dimensions of 0.15 μm using advanced lithography

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Fabrication techniques for grating-based optical devices

Michael H. Lim; T. E. Murphy; J. Ferrera; J. N. Damask; Henry I. Smith

J. Vac. Sci. Technol. B 17, 3208–3211 (1999) https://doi.org/10.1116/1.590981

Abstract

View articletitled, Fabrication techniques for grating-based optical devices

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High aperture diffractive x-ray and extreme ultraviolet optical elements for microscopy and lithography applications

D. Hambach; G. Schneider

J. Vac. Sci. Technol. B 17, 3212–3216 (1999) https://doi.org/10.1116/1.590982

Abstract

View articletitled, High aperture diffractive x-ray and extreme ultraviolet optical elements for microscopy and lithography applications

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High perfection chirped grating phase masks by electron-beam definition

C. Rogers; D. Goodchild; R. Baulcomb; M. Butler; P. Hoyle; S. Kanellopoulos; S. Clements; B. Pugh

J. Vac. Sci. Technol. B 17, 3217–3221 (1999) https://doi.org/10.1116/1.590983

Abstract

View articletitled, High perfection chirped grating phase masks by electron-beam definition

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Vertical cavity surface emitting lasers incorporating structured mirrors patterned by electron-beam lithography

C.-A. Berseth; B. Dwir; I. Utke; H. Pier; A. Rudra; V. P. Iakovlev; E. Kapon; M. Moser

J. Vac. Sci. Technol. B 17, 3222–3225 (1999) https://doi.org/10.1116/1.590984

Abstract

View articletitled, Vertical cavity surface emitting lasers incorporating structured mirrors patterned by electron-beam lithography

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Independently contacted electron–hole gas heterostructures fabricated with focused ion beam doping during molecular beam epitaxial growth

S. Vijendran; P. J. A. Sazio; H. E. Beere; G. A. C. Jones; D. A. Ritchie; C. E. Norman

J. Vac. Sci. Technol. B 17, 3226–3230 (1999) https://doi.org/10.1116/1.590986

Abstract

View articletitled, Independently contacted electron–hole gas heterostructures fabricated with focused ion beam doping during molecular beam epitaxial growth

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Fabrication of tunable antidot structures with submicron airbridges

Y. Feng; A. S. Sachrajda; P. Zawadzki; S. Kolind; M. Buchanan; J. H. Smet; J. Lapointe; P. A. Marshall

J. Vac. Sci. Technol. B 17, 3231–3234 (1999) https://doi.org/10.1116/1.590987

Abstract

View articletitled, Fabrication of tunable antidot structures with submicron airbridges

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Fabrication and electron transport in multilayer silicon-insulator-silicon nanopillars

David M. Pooley; Haroon Ahmed; Neil S. Lloyd

J. Vac. Sci. Technol. B 17, 3235–3238 (1999) https://doi.org/10.1116/1.591136

Abstract

View articletitled, Fabrication and electron transport in multilayer silicon-insulator-silicon nanopillars

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Patterning of silicon nanopillars formed with a colloidal gold etch mask

P. A. Lewis; H. Ahmed

J. Vac. Sci. Technol. B 17, 3239–3243 (1999) https://doi.org/10.1116/1.590988

Abstract

View articletitled, Patterning of silicon nanopillars formed with a colloidal gold etch mask

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Novel method for silicon quantum wire transistor fabrication

Jakub Kedzierski; Jeffrey Bokor; Erik Anderson

J. Vac. Sci. Technol. B 17, 3244–3247 (1999) https://doi.org/10.1116/1.590989

Abstract

View articletitled, Novel method for silicon quantum wire transistor fabrication

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Characteristics of a free-standing superconducting nanobridge with an integrated heater fabricated using a self-aligned technique

S.-B. Lee; D. G. Hasko; H. Ahmed

J. Vac. Sci. Technol. B 17, 3248–3251 (1999) https://doi.org/10.1116/1.590990

Abstract

View articletitled, Characteristics of a free-standing superconducting nanobridge with an integrated heater fabricated using a self-aligned technique

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Fabrication of high performance microlenses for an integrated capillary channel electrochromatograph with fluorescence detection

J. R. Wendt; M. E. Warren; W. C. Sweatt; C. G. Bailey; C. M. Matzke; D. W. Arnold; A. A. Allerman; T. R. Carter; R. E. Asbill; S. Samora

J. Vac. Sci. Technol. B 17, 3252–3255 (1999) https://doi.org/10.1116/1.590991

Abstract

View articletitled, Fabrication of high performance microlenses for an integrated capillary channel electrochromatograph with fluorescence detection

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Scanning probe lithography using a cantilever with integrated transistor for on-chip control of the exposing current

Kathryn Wilder; Calvin F. Quate

J. Vac. Sci. Technol. B 17, 3256–3261 (1999) https://doi.org/10.1116/1.590992

Abstract

View articletitled, Scanning probe lithography using a cantilever with integrated transistor for on-chip control of the exposing current

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OPTICAL LITHOGRAPHY

157 nm: Deepest deep-ultraviolet yet

M. Rothschild; T. M. Bloomstein; J. E. Curtin; D. K. Downs; T. H. Fedynyshyn; D. E. Hardy; R. R. Kunz; V. Liberman; J. H. C. Sedlacek; R. S. Uttaro; A. K. Bates; C. Van Peski

J. Vac. Sci. Technol. B 17, 3262–3266 (1999) https://doi.org/10.1116/1.591137

Abstract

View articletitled, 157 nm: Deepest deep-ultraviolet yet

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Outlook for 157 nm resist design

R. R. Kunz; T. M. Bloomstein; D. E. Hardy; R. B. Goodman; D. K. Downs; J. E. Curtin

J. Vac. Sci. Technol. B 17, 3267–3272 (1999) https://doi.org/10.1116/1.590993

Abstract

View articletitled, Outlook for 157 nm resist design

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Materials issues for optical components and photomasks in 157 nm lithography

V. Liberman; T. M. Bloomstein; M. Rothschild; J. H. C. Sedlacek; R. S. Uttaro; A. K. Bates; C. Van Peski; K. Orvek

J. Vac. Sci. Technol. B 17, 3273–3279 (1999) https://doi.org/10.1116/1.590994

Abstract

View articletitled, Materials issues for optical components and photomasks in 157 nm lithography

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F-doped and $H_{2}$ -impregnated synthetic ${SiO}_{2}$ glasses for 157 nm optics

Masafumi Mizuguchi; Linards Skuja; Hideo Hosono; Tohru Ogawa

J. Vac. Sci. Technol. B 17, 3280–3284 (1999) https://doi.org/10.1116/1.590995

Abstract

View articletitled, F-doped and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>-impregnated synthetic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> glasses for 157 nm optics

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Technique for optical characterization of exposure tool imaging performance down to 100 nm

I. Grodnensky; K. Suwa; N. Farrar; E. Johnson; J. Pan

J. Vac. Sci. Technol. B 17, 3285–3290 (1999) https://doi.org/10.1116/1.590996

Abstract

View articletitled, Technique for optical characterization of exposure tool imaging performance down to 100 nm

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Node-connection/quantum phase-shifting mask: Path to below 0.3 μm pitch, proximity effect free, random interconnects and memory patterning

Hiroshi Fukuda

J. Vac. Sci. Technol. B 17, 3291–3295 (1999) https://doi.org/10.1116/1.590997

Abstract

View articletitled, Node-connection/quantum phase-shifting mask: Path to below 0.3 μm pitch, proximity effect free, random interconnects and memory patterning

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Extension of deep-ultraviolet lithography for patterning logic gates using alternating phase shifting masks

Chen-Cheng Kuo; Chia-Hui Lin; Hua-Tai Lin; Anthony Yen

J. Vac. Sci. Technol. B 17, 3296–3300 (1999) https://doi.org/10.1116/1.590998

Abstract

View articletitled, Extension of deep-ultraviolet lithography for patterning logic gates using alternating phase shifting masks

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Lithographic projectors with dark-field illumination

D. L. White; R. A. Cirelli; S. J. Spector; O. R. Wood, II

J. Vac. Sci. Technol. B 17, 3301–3305 (1999) https://doi.org/10.1116/1.590999

Abstract

View articletitled, Lithographic projectors with dark-field illumination

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Liquid immersion deep-ultraviolet interferometric lithography

J. A. Hoffnagle; W. D. Hinsberg; M. Sanchez; F. A. Houle

J. Vac. Sci. Technol. B 17, 3306–3309 (1999) https://doi.org/10.1116/1.591000

Abstract

View articletitled, Liquid immersion deep-ultraviolet interferometric lithography

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Nanofabrication with deep-ultraviolet lithography and resolution enhancements

M. Fritze; S. Palmateer; P. Maki; J. Knecht; C. K. Chen; D. Astolfi; S. Cann; S. Denault; K. Krohn; P.W. Wyatt

J. Vac. Sci. Technol. B 17, 3310–3313 (1999) https://doi.org/10.1116/1.591001

Abstract

View articletitled, Nanofabrication with deep-ultraviolet lithography and resolution enhancements

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Near-field distribution in light-coupling masks for contact lithography

Michael Paulus; Bruno Michel; Olivier J. F. Martin

J. Vac. Sci. Technol. B 17, 3314–3317 (1999) https://doi.org/10.1116/1.591002

Abstract

View articletitled, Near-field distribution in light-coupling masks for contact lithography

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Determination of high-order lens aberration using phase/amplitude linear algebra

Hiroshi Fukuda; Katsuya Hayano; Seiichiro Shirai

J. Vac. Sci. Technol. B 17, 3318–3321 (1999) https://doi.org/10.1116/1.591003

Abstract

View articletitled, Determination of high-order lens aberration using phase/amplitude linear algebra

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RESIST TECHNOLOGY

High contrast chemically amplified 193 nm resist for gigabit dynamic random access memory generation

Toshiro Itani; Hiroshi Yoshino; Mitsuharu Yamana; Michiya Takimoto; Hiroyoshi Tanabe

J. Vac. Sci. Technol. B 17, 3322–3325 (1999) https://doi.org/10.1116/1.591004

Abstract

View articletitled, High contrast chemically amplified 193 nm resist for gigabit dynamic random access memory generation

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Study of bilayer silylation process for 193 nm lithography using chemically amplified resist

I. Satou; K. Kuhara; M. Endo; H. Morimoto

J. Vac. Sci. Technol. B 17, 3326–3329 (1999) https://doi.org/10.1116/1.591005

Abstract

View articletitled, Study of bilayer silylation process for 193 nm lithography using chemically amplified resist

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Outgassing of organic vapors from 193 nm photoresists: Impact on atmospheric purity near the lens optics

R. R. Kunz; D. K. Downs

J. Vac. Sci. Technol. B 17, 3330–3334 (1999) https://doi.org/10.1116/1.591006

Abstract

View articletitled, Outgassing of organic vapors from 193 nm photoresists: Impact on atmospheric purity near the lens optics

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Study of resolution limits due to intrinsic bias in chemically amplified photoresists

Sergei V. Postnikov; Michael D. Stewart; Hoang Vi Tran; Mark A. Nierode; David R. Medeiros; T. Cao; Jeffrey Byers; Stephen E. Webber; C. Grant Wilson

J. Vac. Sci. Technol. B 17, 3335–3338 (1999) https://doi.org/10.1116/1.591007

Abstract

View articletitled, Study of resolution limits due to intrinsic bias in chemically amplified photoresists

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Moving boundary transport model for acid diffusion in chemically amplified resists

Ebo Croffie; Mosong Cheng; Andrew Neureuther

J. Vac. Sci. Technol. B 17, 3339–3344 (1999) https://doi.org/10.1116/1.591008

Abstract

View articletitled, Moving boundary transport model for acid diffusion in chemically amplified resists

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Study of acid diffusion in a positive tone chemically amplified resist using an on-wafer imaging technique

Bing Lu; James W. Taylor; Franco Cerrina; Choi Pheng Soo; Antony J. Bourdillon

J. Vac. Sci. Technol. B 17, 3345–3350 (1999) https://doi.org/10.1116/1.591009

Abstract

View articletitled, Study of acid diffusion in a positive tone chemically amplified resist using an on-wafer imaging technique

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Study of acid diffusion in resist near the glass transition temperature

David S. Fryer; Srinivas Bollepali; Juan J. de Pablo; Paul F. Nealey

J. Vac. Sci. Technol. B 17, 3351–3355 (1999) https://doi.org/10.1116/1.591010

Abstract

View articletitled, Study of acid diffusion in resist near the glass transition temperature

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Measuring acid generation efficiency in chemically amplified resists with all three beams

Charles R. Szmanda; Robert L. Brainard; Joseph F. Mackevich; Akira Awaji; Tsutomu Tanaka; Yutaka Yamada; John Bohland; Serge Tedesco; Bernard Dal’Zotto; Wilhelm Bruenger; Michael Torkler; Wolfgang Fallmann; Hans Loeschner; Rainer Kaesmaier; Paul M. Nealey; Adam R. Pawloski

J. Vac. Sci. Technol. B 17, 3356–3361 (1999) https://doi.org/10.1116/1.591011

Abstract

View articletitled, Measuring acid generation efficiency in chemically amplified resists with all three beams

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Relationship between the slope of the HD curve and the fundamental resist process contrast

Timothy A. Brunner

J. Vac. Sci. Technol. B 17, 3362–3366 (1999) https://doi.org/10.1116/1.591138

Abstract

View articletitled, Relationship between the slope of the HD curve and the fundamental resist process contrast

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Simulation of roughness in chemically amplified resists using percolation theory

G. P. Patsis; N. Glezos; I. Raptis; E. S. Valamontes

J. Vac. Sci. Technol. B 17, 3367–3370 (1999) https://doi.org/10.1116/1.591012

Abstract

View articletitled, Simulation of roughness in chemically amplified resists using percolation theory

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Applications of molecular modeling in nanolithography

A. R. Pawloski; J. A. Torres; P. F. Nealey; J. J. de Pablo

J. Vac. Sci. Technol. B 17, 3371–3378 (1999) https://doi.org/10.1116/1.591013

Abstract

View articletitled, Applications of molecular modeling in nanolithography

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Extreme ultraviolet and x-ray resist: Comparison study

D. He; H. Solak; W. Li; F. Cerrina

J. Vac. Sci. Technol. B 17, 3379–3383 (1999) https://doi.org/10.1116/1.591014

Abstract

View articletitled, Extreme ultraviolet and x-ray resist: Comparison study

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Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation

Robert L. Brainard; Craig Henderson; Jonathan Cobb; Veena Rao; Joseph F. Mackevich; Uzodinma Okoroanyanwu; Scott Gunn; Janet Chambers; Susan Connolly

J. Vac. Sci. Technol. B 17, 3384–3389 (1999) https://doi.org/10.1116/1.591015

Abstract

View articletitled, Comparison of the lithographic properties of positive resists upon exposure to deep- and extreme-ultraviolet radiation

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Comparison of sensitivity and exposure latitude for polymethylmethacrylate, UVIII, and calixarene using conventional dip and ultrasonically assisted development

Shazia Yasin; D. G. Hasko; H. Ahmed

J. Vac. Sci. Technol. B 17, 3390–3393 (1999) https://doi.org/10.1116/1.591016

Abstract

View articletitled, Comparison of sensitivity and exposure latitude for polymethylmethacrylate, UVIII, and calixarene using conventional dip and ultrasonically assisted development

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Application of 4-methyl-1-acetoxycalix[6]arene resist to complementary metal–oxide–semiconductor gate processing

Michael J. Rooks; Ari Aviram

J. Vac. Sci. Technol. B 17, 3394–3397 (1999) https://doi.org/10.1116/1.591017

Abstract

View articletitled, Application of 4-methyl-1-acetoxycalix[6]arene resist to complementary metal–oxide–semiconductor gate processing

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Novel antireflective layer using polysilane for deep ultraviolet lithography

Y. Sato; E. Shiobara; S. Miyoshi; M. Asano; H. Matsuyama; Y. Onishi; Y. Nakano; S. Hayase

J. Vac. Sci. Technol. B 17, 3398–3401 (1999) https://doi.org/10.1116/1.591018

Abstract

View articletitled, Novel antireflective layer using polysilane for deep ultraviolet lithography

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X-RAY LITHOGRAPHY

Progress in x-ray mask technology at NTT

Masatoshi Oda; Masaru Shimada; Tai Tsuchizawa; Shingo Uchiyama; Ikuo Okada; Hideo Yoshihara

J. Vac. Sci. Technol. B 17, 3402–3406 (1999) https://doi.org/10.1116/1.591019

Abstract

View articletitled, Progress in x-ray mask technology at NTT

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Thermal compensation of x-ray mask distortions

M. Feldman

J. Vac. Sci. Technol. B 17, 3407–3410 (1999) https://doi.org/10.1116/1.591020

Abstract

View articletitled, Thermal compensation of x-ray mask distortions

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Magnification correction by changing wafer temperature in proximity x-ray lithography

H. Aoyama; S. Mitsui; T. Taguchi; Y. Tanaka; Y. Matsui; M. Fukuda; M. Suzuki; T. Haga; H. Morita

J. Vac. Sci. Technol. B 17, 3411–3414 (1999) https://doi.org/10.1116/1.591021

Abstract

View articletitled, Magnification correction by changing wafer temperature in proximity x-ray lithography

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Critical-dimension control for 100 nm patterns in x-ray lithography

Y. Tanaka; T. Iwamoto; K. Fujii; Y. Kikuchi; Y. Matsui; M. Fukuda; H. Morita

J. Vac. Sci. Technol. B 17, 3415–3419 (1999) https://doi.org/10.1116/1.591022

Abstract

View articletitled, Critical-dimension control for 100 nm patterns in x-ray lithography

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Direct measurement of x-ray mask sidewall roughness and its contribution to the overall sidewall roughness of chemically amplified resist features

Geoffrey W. Reynolds; James W. Taylor; Cameron J. Brooks

J. Vac. Sci. Technol. B 17, 3420–3425 (1999) https://doi.org/10.1116/1.591023

Abstract

View articletitled, Direct measurement of x-ray mask sidewall roughness and its contribution to the overall sidewall roughness of chemically amplified resist features

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Extension of x-ray lithography to 50 nm with a harder spectrum

Mumit Khan; Geng Han; Srinivas B. Bollepalli; Franco Cerrina; Juan Maldonado

J. Vac. Sci. Technol. B 17, 3426–3432 (1999) https://doi.org/10.1116/1.591024

Abstract

View articletitled, Extension of x-ray lithography to 50 nm with a harder spectrum

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Pattern resolution of an x-ray beamline with a wide exposure field

Mumit Khan; Franco Cerrina; Eijiro Toyota

J. Vac. Sci. Technol. B 17, 3433–3438 (1999) https://doi.org/10.1116/1.591025

Abstract

View articletitled, Pattern resolution of an x-ray beamline with a wide exposure field

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X-ray multilevel zone plate fabrication by means of electron-beam lithography: Toward high-efficiency performances

Enzo Di Fabrizio; Massimo Gentili

J. Vac. Sci. Technol. B 17, 3439–3443 (1999) https://doi.org/10.1116/1.591026

Abstract

View articletitled, X-ray multilevel zone plate fabrication by means of electron-beam lithography: Toward high-efficiency performances

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Fabrication of three-dimensional microstructures by high resolution x-ray lithography

C. Cuisin; Y. Chen; D. Decanini; A. Chelnokov; F. Carcenac; A. Madouri; J. M. Lourtioz; H. Launois

J. Vac. Sci. Technol. B 17, 3444–3448 (1999) https://doi.org/10.1116/1.591027

Abstract

View articletitled, Fabrication of three-dimensional microstructures by high resolution x-ray lithography

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Maskless, parallel patterning with zone-plate array lithography

D. J. D. Carter; Dario Gil; Rajesh Menon; Mark. K. Mondol; Henry I. Smith; Erik H. Anderson

J. Vac. Sci. Technol. B 17, 3449–3452 (1999) https://doi.org/10.1116/1.591028

Abstract

View articletitled, Maskless, parallel patterning with zone-plate array lithography

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