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REGULAR ARTICLES

Application and calibration of a quartz needle sensor for high resolution scanning force microscopy

W. Clauss; J. Zhang; D. J. Bergeron; A. T. Johnson

J. Vac. Sci. Technol. B 17, 1309–1312 (1999) https://doi.org/10.1116/1.590751

Abstract

View articletitled, Application and calibration of a quartz needle sensor for high resolution scanning force microscopy

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Surface structure characterization of DNA oligomer on Cu(111) surface using low temperature scanning tunneling microscopy

Chiho Hamai; Hiroyuki Tanaka; Tomoji Kawai

J. Vac. Sci. Technol. B 17, 1313–1316 (1999) https://doi.org/10.1116/1.590752

Abstract

View articletitled, Surface structure characterization of DNA oligomer on Cu(111) surface using low temperature scanning tunneling microscopy

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Microstructure and electrical properties of Sb nanocrystals formed in thin, thermally grown ${SiO}_{2}$ layers by low-energy ion implantation

Anri Nakajima; Hiroshi Nakao; Hiroaki Ueno; Toshiro Futatsugi; Naoki Yokoyama

J. Vac. Sci. Technol. B 17, 1317–1322 (1999) https://doi.org/10.1116/1.590753

Abstract

View articletitled, Microstructure and electrical properties of Sb nanocrystals formed in thin, thermally grown <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> layers by low-energy ion implantation

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Fabrication of a metal nanostructure on the Si(111) surface

D. Rogers; H. Nejoh

J. Vac. Sci. Technol. B 17, 1323–1328 (1999) https://doi.org/10.1116/1.590754

Abstract

View articletitled, Fabrication of a metal nanostructure on the Si(111) surface

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Mechanical properties, stress evolution and high-temperature thermal stability of nanolayered Mo–Si–N/SiC thin films

P. Torri; J.-P. Hirvonen; H. Kung; Y.-C. Lu; M. Nastasi; P. N. Gibson

J. Vac. Sci. Technol. B 17, 1329–1335 (1999) https://doi.org/10.1116/1.590755

Abstract

View articletitled, Mechanical properties, stress evolution and high-temperature thermal stability of nanolayered Mo–Si–N/SiC thin films

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Characterization of bending in single crystal Si beams and resonators

J. W. Weigold; W. H. Juan; S. W. Pang; J. T. Borenstein

J. Vac. Sci. Technol. B 17, 1336–1340 (1999) https://doi.org/10.1116/1.590756

Abstract

View articletitled, Characterization of bending in single crystal Si beams and resonators

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In situ ellipsometric study of the formation process of metalorganic vapor-phase epitaxy-grown quantum dots

Jeong-Sik Lee; Shigeo Sugou; Hong-Wen Ren; Yasuaki Masumoto

J. Vac. Sci. Technol. B 17, 1341–1345 (1999) https://doi.org/10.1116/1.590757

Abstract

View articletitled, In situ ellipsometric study of the formation process of metalorganic vapor-phase epitaxy-grown quantum dots

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High temperature reaction of nitric oxide with Si surfaces: Formation of Si nanopillars through nitride masking and oxygen etching

K. Prabhakaran; T. Ogino

J. Vac. Sci. Technol. B 17, 1346–1349 (1999) https://doi.org/10.1116/1.590758

Abstract

View articletitled, High temperature reaction of nitric oxide with Si surfaces: Formation of Si nanopillars through nitride masking and oxygen etching

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Low energy electron beam decomposition of metalorganic precursors with a scanning tunneling microscope at ambient atmosphere

H. Brückl; J. Kretz; H. W. Koops; G. Reiss

J. Vac. Sci. Technol. B 17, 1350–1353 (1999) https://doi.org/10.1116/1.590759

Abstract

View articletitled, Low energy electron beam decomposition of metalorganic precursors with a scanning tunneling microscope at ambient atmosphere

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Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases

M. W. Nelson; P. G. Schroeder; R. Schlaf; B. A. Parkinson

J. Vac. Sci. Technol. B 17, 1354–1360 (1999) https://doi.org/10.1116/1.590760

Abstract

View articletitled, Two-dimensional dopant profiling of patterned Si wafers using phase imaging tapping mode atomic force microscopy with applied biases

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Fabrication of a microcavity structure with a polyimide thin film prepared by vacuum deposition polymerization

Y. Sakakibara; T. Tani

J. Vac. Sci. Technol. B 17, 1361–1365 (1999) https://doi.org/10.1116/1.590761

Abstract

View articletitled, Fabrication of a microcavity structure with a polyimide thin film prepared by vacuum deposition polymerization

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Low voltage electron beam lithography in PMMA

A. Olkhovets; H. G. Craighead

J. Vac. Sci. Technol. B 17, 1366–1370 (1999) https://doi.org/10.1116/1.590762

Abstract

View articletitled, Low voltage electron beam lithography in PMMA

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Surface roughness development during photoresist dissolution

Lewis W. Flanagin; Vivek K. Singh; C. Grant Willson

J. Vac. Sci. Technol. B 17, 1371–1379 (1999) https://doi.org/10.1116/1.590763

Abstract

View articletitled, Surface roughness development during photoresist dissolution

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Relations between the solubility speed and the electrical conductivity of phenol novolak polymer solutions

T. Takeda; M. Saka

J. Vac. Sci. Technol. B 17, 1380–1384 (1999) https://doi.org/10.1116/1.590764

Abstract

View articletitled, Relations between the solubility speed and the electrical conductivity of phenol novolak polymer solutions

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Low-stress W/Cr films for SCALPEL^® mask scattering layers

David L. Windt

J. Vac. Sci. Technol. B 17, 1385–1389 (1999) https://doi.org/10.1116/1.590841

Abstract

View articletitled, Low-stress W/Cr films for SCALPEL® mask scattering layers

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Microelectron gun integrating a point-source cathode

Zoubida Hammadi; Michel Gauch; Roger Morin

J. Vac. Sci. Technol. B 17, 1390–1394 (1999) https://doi.org/10.1116/1.590765

Abstract

View articletitled, Microelectron gun integrating a point-source cathode

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Low brightness and high emittance electron gun for a reducing image projection system

Mamoru Nakasuji; Hiroyasu Shimizu

J. Vac. Sci. Technol. B 17, 1395–1399 (1999) https://doi.org/10.1116/1.590766

Abstract

View articletitled, Low brightness and high emittance electron gun for a reducing image projection system

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Generalization of electrostatic lens characteristics using the Picht ray trajectories

Yoshimi Kawanami; Tohru Ishitani

J. Vac. Sci. Technol. B 17, 1400–1405 (1999) https://doi.org/10.1116/1.590767

Abstract

View articletitled, Generalization of electrostatic lens characteristics using the Picht ray trajectories

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X-ray photoelectron spectroscopy analyses of oxide-masked organic polymers etched in high density plasmas using ${SO}_{2} {/O}_{2}$ gas mixtures

C. Monget; O. Joubert

J. Vac. Sci. Technol. B 17, 1406–1412 (1999) https://doi.org/10.1116/1.590768

Abstract

View articletitled, X-ray photoelectron spectroscopy analyses of oxide-masked organic polymers etched in high density plasmas using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> gas mixtures

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Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

Yu. A. Pashkin; J. P. Pekola; L. S. Kuzmin

J. Vac. Sci. Technol. B 17, 1413–1416 (1999) https://doi.org/10.1116/1.590769

Abstract

View articletitled, Fabrication and characterization of chromium based single-electron transistors with evaporated chromium oxide barrier tunnel junctions

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Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from ${SiH}_{4}$ and $N_{2} O$

Guangquan Lu; Laura L. Tedder; Gary W. Rubloff

J. Vac. Sci. Technol. B 17, 1417–1423 (1999) https://doi.org/10.1116/1.590770

Abstract

View articletitled, Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiH</mi><mrow><mn>4</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math>

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Relaxation of strained Si layers grown on SiGe buffers

S. B. Samavedam; W. J. Taylor; J. M. Grant; J. A. Smith; P. J. Tobin; A. Dip; A. M. Phillips; R. Liu

J. Vac. Sci. Technol. B 17, 1424–1429 (1999) https://doi.org/10.1116/1.590771

Abstract

View articletitled, Relaxation of strained Si layers grown on SiGe buffers

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High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties

M. C. Hugon; F. Delmotte; B. Agius; E. A. Irene

J. Vac. Sci. Technol. B 17, 1430–1434 (1999) https://doi.org/10.1116/1.591100

Abstract

View articletitled, High density plasma deposition of device quality silicon nitride. II. Effects of thickness on the electrical properties

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Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch

P. J. Matsuo; T. E. F. M. Standaert; S. D. Allen; G. S. Oehrlein; T. J. Dalton

J. Vac. Sci. Technol. B 17, 1435–1447 (1999) https://doi.org/10.1116/1.590772

Abstract

View articletitled, Characterization of Al, Cu, and TiN surface cleaning following a low-K dielectric etch

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Reaction and thermal stability of cobalt disilicide on polysilicon resulting from a Si/Ti/Co multilayer system

A. Alberti; F. La Via; F. Rimini

J. Vac. Sci. Technol. B 17, 1448–1455 (1999) https://doi.org/10.1116/1.590773

Abstract

View articletitled, Reaction and thermal stability of cobalt disilicide on polysilicon resulting from a Si/Ti/Co multilayer system

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Impact of plasma-enhanced chemical vapor deposited oxide characteristics on interconnect via resistance and device performance of four-transistor static random access memory with polysilicon load resistors

C.-F. Lin; W. T. Tseng; M. S. Feng; Y. L. Wang

J. Vac. Sci. Technol. B 17, 1456–1463 (1999) https://doi.org/10.1116/1.590774

Abstract

View articletitled, Impact of plasma-enhanced chemical vapor deposited oxide characteristics on interconnect via resistance and device performance of four-transistor static random access memory with polysilicon load resistors

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Study of crystal orientation in Cu film on TiN layered structures

Kazuhide Abe; Yusuke Harada; Hiroshi Onoda

J. Vac. Sci. Technol. B 17, 1464–1469 (1999) https://doi.org/10.1116/1.590775

Abstract

View articletitled, Study of crystal orientation in Cu film on TiN layered structures

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Barrier properties of ${Ta–RuO}_{2}$ diffusion barrier for dynamic random access memory capacitor bottom electrodes

Dong-Soo Yoon; Hong Koo Baik; Sung-Man Lee; Sang-In Lee

J. Vac. Sci. Technol. B 17, 1470–1476 (1999) https://doi.org/10.1116/1.590776

Abstract

View articletitled, Barrier properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ta–RuO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> diffusion barrier for dynamic random access memory capacitor bottom electrodes

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Superlatticed negative differential-resistance heterojunction bipolar transistor

Shiou-Ying Cheng; Jung-Hui Tsai; Po-Hung Lin; Wen-Chau Liu

J. Vac. Sci. Technol. B 17, 1477–1481 (1999) https://doi.org/10.1116/1.590777

Abstract

View articletitled, Superlatticed negative differential-resistance heterojunction bipolar transistor

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High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy

Takahiro Kitada; Keisuke Nii; Tetsuya Hiraoka; Satoshi Shimomura; Satoshi Hiyamizu

J. Vac. Sci. Technol. B 17, 1482–1484 (1999) https://doi.org/10.1116/1.590778

Abstract

View articletitled, High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxy

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Evolution of microstructure and dislocation dynamics in ${In}_{x} {Ga}_{1−x} P$ graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials

Andrew Y. Kim; Wendy S. McCullough; Eugene A. Fitzgerald

J. Vac. Sci. Technol. B 17, 1485–1501 (1999) https://doi.org/10.1116/1.590779

Abstract

View articletitled, Evolution of microstructure and dislocation dynamics in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">P</mi></math> graded buffers grown on GaP by metalorganic vapor phase epitaxy: Engineering device-quality substrate materials

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Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction

M. F. Wu; Shude Yao; A. Vantomme; S. M. Hogg; G. Langouche; J. Li; G. Y. Zhang

J. Vac. Sci. Technol. B 17, 1502–1506 (1999) https://doi.org/10.1116/1.590780

Abstract

View articletitled, Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction

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Blueshift of ${In}_{0.2} {Ga}_{0.8} N$ /GaN single quantum well band gap energy by rapid thermal annealing

G. Li; S. J. Chua; J. H. Teng; W. Wang; Z. C. Feng; Y. H. Huang; T. Osipowicz

J. Vac. Sci. Technol. B 17, 1507–1509 (1999) https://doi.org/10.1116/1.590781

Abstract

View articletitled, Blueshift of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.8</mi></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math>/GaN single quantum well band gap energy by rapid thermal annealing

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New self-aligned processes for III–V electronic high speed devices

J. Etrillard; C. Besombes; L. Bricard; A. M. Duchenois

J. Vac. Sci. Technol. B 17, 1510–1515 (1999) https://doi.org/10.1116/1.590782

Abstract

View articletitled, New self-aligned processes for III–V electronic high speed devices

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Effect of short-time helicon-wave excited $N_{2} –Ar$ plasma treatment on the interface characteristic of GaAs

Satoshi Wada; Keisuke Kanazawa; Nariaki Okamoto; Hideaki Ikoma

J. Vac. Sci. Technol. B 17, 1516–1524 (1999) https://doi.org/10.1116/1.590783

Abstract

View articletitled, Effect of short-time helicon-wave excited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">–Ar</mi></math> plasma treatment on the interface characteristic of GaAs

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Nitridation of GaAs(001) surface: Auger electron spectroscopy and reflection high-energy electron diffraction

Igor Aksenov; Hidekazu Iwai; Yoshinobu Nakada; Hajime Okumura

J. Vac. Sci. Technol. B 17, 1525–1539 (1999) https://doi.org/10.1116/1.590784

Abstract

View articletitled, Nitridation of GaAs(001) surface: Auger electron spectroscopy and reflection high-energy electron diffraction

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Inductively coupled plasma damage in GaN Schottky diodes

X. A. Cao; A. P. Zhang; G. T. Dang; H. Cho; F. Ren; S. J. Pearton; R. J. Shul; L. Zhang; R. Hickman; J. M. Van Hove

J. Vac. Sci. Technol. B 17, 1540–1544 (1999) https://doi.org/10.1116/1.590785

Abstract

View articletitled, Inductively coupled plasma damage in GaN Schottky diodes

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Effect of rapid thermal annealing on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes

Ching-Wu Wang; Jin-Yuan Liao; Chih-Liang Chen; Wen-Kuan Lin; Yan-Kuin Su; Meiso Yokoyama

J. Vac. Sci. Technol. B 17, 1545–1548 (1999) https://doi.org/10.1116/1.590786

Abstract

View articletitled, Effect of rapid thermal annealing on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes

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Plasma assisted two stage selenization process for the preparation of low resistivity ZnSe films

R. Jeyakumar; G. K. Chadda; S. T. Lakshmikumar; A. C. Rastogi

J. Vac. Sci. Technol. B 17, 1549–1552 (1999) https://doi.org/10.1116/1.590787

Abstract

View articletitled, Plasma assisted two stage selenization process for the preparation of low resistivity ZnSe films

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Arrays of ungated GaAs field emitters fabricated by wet or dry etching

F. Ducroquet; P. Kropfeld; O. Yaradou; A. Vanoverschelde

J. Vac. Sci. Technol. B 17, 1553–1560 (1999) https://doi.org/10.1116/1.590788

Abstract

View articletitled, Arrays of ungated GaAs field emitters fabricated by wet or dry etching

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Novel lateral field emission device fabricated on silicon-on-insulator material

Minhee Yun; Anthony Turner; Ronald J. Roedel; Michael N. Kozicki

J. Vac. Sci. Technol. B 17, 1561–1566 (1999) https://doi.org/10.1116/1.590789

Abstract

View articletitled, Novel lateral field emission device fabricated on silicon-on-insulator material

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Field emission properties of diamondlike carbon films deposited by ion beam assisted deposition

Jing Wang; Wen-Zhi Li; Heng-De Li

J. Vac. Sci. Technol. B 17, 1567–1569 (1999) https://doi.org/10.1116/1.590790

Abstract

View articletitled, Field emission properties of diamondlike carbon films deposited by ion beam assisted deposition

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High aspect ratio all diamond tips formed by focused ion beam for conducting atomic force microscopy

A. Olbrich; B. Ebersberger; C. Boit; Ph. Niedermann; W. Hänni; J. Vancea; H. Hoffmann

J. Vac. Sci. Technol. B 17, 1570–1574 (1999) https://doi.org/10.1116/1.590842

Abstract

View articletitled, High aspect ratio all diamond tips formed by focused ion beam for conducting atomic force microscopy

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Sensitivity analysis of the field emitter

Lei Wei; Wang Baoping; Yin Hanchun; Guohui Li

J. Vac. Sci. Technol. B 17, 1575–1579 (1999) https://doi.org/10.1116/1.590791

Abstract

View articletitled, Sensitivity analysis of the field emitter

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High field characteristics of dielectric spacers in thin-film electrode vacuum gaps

Xianyun Ma; T. S. Sudarshan

J. Vac. Sci. Technol. B 17, 1580–1584 (1999) https://doi.org/10.1116/1.590792

Abstract

View articletitled, High field characteristics of dielectric spacers in thin-film electrode vacuum gaps

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BRIEF REPORTS AND COMMENTS

Mechanism of highly preferred (002) texture of Ti films sputter deposited on water-absorbed borophosphosilicate glass films

Tomoyuki Yoshida; Koyu Aoki; Yasuichi Mitsushima

J. Vac. Sci. Technol. B 17, 1585–1588 (1999) https://doi.org/10.1116/1.590793

Abstract

View articletitled, Mechanism of highly preferred (002) texture of Ti films sputter deposited on water-absorbed borophosphosilicate glass films

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Microfabrication and testing of suspended structures compatible with silicon-on-insulator technology

A. A. Ayón; K. Ishihara; R. A. Braff; H. H. Sawin; M. A. Schmidt

J. Vac. Sci. Technol. B 17, 1589–1593 (1999) https://doi.org/10.1116/1.590794

Abstract

View articletitled, Microfabrication and testing of suspended structures compatible with silicon-on-insulator technology

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RAPID COMMUNICATIONS

Low-energy electron-beam lithography using calixarene

A. Tilke; M. Vogel; F. Simmel; A. Kriele; R. H. Blick; H. Lorenz; D. A. Wharam; J. P. Kotthaus

J. Vac. Sci. Technol. B 17, 1594–1597 (1999) https://doi.org/10.1116/1.590795

Abstract

View articletitled, Low-energy electron-beam lithography using calixarene

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New method to prepare ${W–B}^{+} –N$ ternary barrier to Cu diffusion by implanting ${BF}_{2}^{+}$ ions into W–N thin film

Dong Joon Kim; Yong Tae Kim; Jong-Wan Park

J. Vac. Sci. Technol. B 17, 1598–1601 (1999) https://doi.org/10.1116/1.590796

Abstract

View articletitled, New method to prepare <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">W–B</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup><mi mathvariant="normal" xmlns="">–N</mi></math> ternary barrier to Cu diffusion by implanting <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">BF</mi><mrow><mi mathvariant="normal">2</mi></mrow><mrow><mi mathvariant="normal">+</mi></mrow></msubsup></math> ions into W–N thin film

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Growth of a near-atomic protrusion on molybdenum field emitter tips under argon ion bombardment

F. Okuyama; H. Sugie; M. Sato

J. Vac. Sci. Technol. B 17, 1602–1604 (1999) https://doi.org/10.1116/1.590797

Abstract

View articletitled, Growth of a near-atomic protrusion on molybdenum field emitter tips under argon ion bombardment

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SHOP NOTES

Multilayer resist films applicable to nanopatterning of insulating substrates based on current-injecting scanning probe lithography

Hiroyuki Sugimura; Osamu Takai; Nobuyuki Nakagiri

J. Vac. Sci. Technol. B 17, 1605–1608 (1999) https://doi.org/10.1116/1.590798

Abstract

View articletitled, Multilayer resist films applicable to nanopatterning of insulating substrates based on current-injecting scanning probe lithography

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PAPERS FROM THE 26TH CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES

DIELECTRICS, QUANTUM DOTS, AND OPTOELECTRONIC INTERFACES

Deliberately designed interfaces for monolithic integration in optoelectronics

Tairan Wang; N. Moll; Kyeongjae Cho; J. D. Joannopoulos

J. Vac. Sci. Technol. B 17, 1612–1616 (1999) https://doi.org/10.1116/1.590799

Abstract

View articletitled, Deliberately designed interfaces for monolithic integration in optoelectronics

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Pyroelectronics: Novel device concepts based on nitride interfaces

G. Zandler; J. A. Majewski; P. Vogl

J. Vac. Sci. Technol. B 17, 1617–1621 (1999) https://doi.org/10.1116/1.590800

Abstract

View articletitled, Pyroelectronics: Novel device concepts based on nitride interfaces

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Selective area chemical vapor deposition of titanium oxide films: Characterization of $Ti ({OC}_{3} H_{7})_{4}$ as an electron beam resist

William J. Mitchell; Evelyn L. Hu

J. Vac. Sci. Technol. B 17, 1622–1626 (1999) https://doi.org/10.1116/1.590801

Abstract

View articletitled, Selective area chemical vapor deposition of titanium oxide films: Characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Ti</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">OC</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>7</mn></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mn>4</mn></mrow></msub></math> as an electron beam resist

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Reduction and creation of paramagnetic centers on surfaces of three different polytypes of SiC

P. J. Macfarlane; M. E. Zvanut

J. Vac. Sci. Technol. B 17, 1627–1631 (1999) https://doi.org/10.1116/1.590802

Abstract

View articletitled, Reduction and creation of paramagnetic centers on surfaces of three different polytypes of SiC

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Finite linewidth observed in photoluminescence spectra of individual ${In}_{0.4} {Ga}_{0.6} As$ quantum dots

J. L. Spithoven; J. Lorbacher; I. Manke; F. Heinrichsdorff; A. Krost; D. Bimberg; M. Dähne-Prietsch

J. Vac. Sci. Technol. B 17, 1632–1638 (1999) https://doi.org/10.1116/1.590924

Abstract

View articletitled, Finite linewidth observed in photoluminescence spectra of individual <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.6</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> quantum dots

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Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition

O. Flebbe; H. Eisele; T. Kalka; F. Heinrichsdorff; A. Krost; D. Bimberg; M. Dähne-Prietsch

J. Vac. Sci. Technol. B 17, 1639–1648 (1999) https://doi.org/10.1116/1.590803

Abstract

View articletitled, Atomic structure of stacked InAs quantum dots grown by metal-organic chemical vapor deposition

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Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy

H. P. Xin; K. L. Kavanagh; Z. Q. Zhu; C. W. Tu

J. Vac. Sci. Technol. B 17, 1649–1653 (1999) https://doi.org/10.1116/1.590804

Abstract

View articletitled, Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy

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NITRIDE EPITAXY, PHOTONIC PROBES, AND BAND OFFSETS

Influence of active nitrogen species on high temperature limitations for $(0001_)$ GaN growth by rf plasma-assisted molecular beam epitaxy

T. H. Myers; M. R. Millecchia; A. J. Ptak; K. S. Ziemer; C. D. Stinespring

J. Vac. Sci. Technol. B 17, 1654–1658 (1999) https://doi.org/10.1116/1.590805

Abstract

View articletitled, Influence of active nitrogen species on high temperature limitations for <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(0001_)</mtext></math> GaN growth by rf plasma-assisted molecular beam epitaxy

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Nitridation of the GaAs(001) surface: Thermal behavior of the (3×3) reconstruction and its evolution

J. Lu; L. Haworth; P. Hill; D. I. Westwood; J. E. Macdonald

J. Vac. Sci. Technol. B 17, 1659–1665 (1999) https://doi.org/10.1116/1.590806

Abstract

View articletitled, Nitridation of the GaAs(001) surface: Thermal behavior of the (3×3) reconstruction and its evolution

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Use of ultrathin ZnSe dipole layers for band offset engineering at Ge and Si homo/heterojunctions

S. P. Wilks; R. H. Williams; M. Pan; P. R. Dunstan; B. C. C. Cowie

J. Vac. Sci. Technol. B 17, 1666–1673 (1999) https://doi.org/10.1116/1.590807

Abstract

View articletitled, Use of ultrathin ZnSe dipole layers for band offset engineering at Ge and Si homo/heterojunctions

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AlN and GaN epitaxial heterojunctions on 6H–SiC(0001): Valence band offsets and polarization fields

Angela Rizzi; Roberta Lantier; Fulvia Monti; Hans Lüth; Fabio Della Sala; Aldo Di Carlo; Paolo Lugli

J. Vac. Sci. Technol. B 17, 1674–1681 (1999) https://doi.org/10.1116/1.590808

Abstract

View articletitled, AlN and GaN epitaxial heterojunctions on 6H–SiC(0001): Valence band offsets and polarization fields

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Epitaxial growth and electronic structure of lanthanide silicides on n-type Si(111)

S. Vandré; T. Kalka; C. Preinesberger; M. Dähne-Prietsch

J. Vac. Sci. Technol. B 17, 1682–1690 (1999) https://doi.org/10.1116/1.590809

Abstract

View articletitled, Epitaxial growth and electronic structure of lanthanide silicides on n-type Si(111)

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GaP(001) and InP(001): Reflectance anisotropy and surface geometry

N. Esser; W. G. Schmidt; J. Bernholc; A. M. Frisch; P. Vogt; M. Zorn; M. Pristovsek; W. Richter; F. Bechstedt; Th. Hannappel; S. Visbeck

J. Vac. Sci. Technol. B 17, 1691–1696 (1999) https://doi.org/10.1116/1.590810

Abstract

View articletitled, GaP(001) and InP(001): Reflectance anisotropy and surface geometry

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In situ reflectance difference spectroscopy of II–VI compounds: A real time study of N plasma doping during molecular beam epitaxy

D. Stifter; M. Schmid; K. Hingerl; A. Bonanni; M. Garcia-Rocha; H. Sitter

J. Vac. Sci. Technol. B 17, 1697–1701 (1999) https://doi.org/10.1116/1.590811

Abstract

View articletitled, In situ reflectance difference spectroscopy of II–VI compounds: A real time study of N plasma doping during molecular beam epitaxy

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MAGNETIC INTERFACES AND PHOTON SCATTERING

Specular electron scattering in metallic thin films

W. F. Egelhoff, Jr.; P. J. Chen; C. J. Powell; D. Parks; G. Serpa; R. D. McMichael; D. Martien; A. E. Berkowitz

J. Vac. Sci. Technol. B 17, 1702–1707 (1999) https://doi.org/10.1116/1.590812

Abstract

View articletitled, Specular electron scattering in metallic thin films

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Spin relaxation of conduction electrons

J. Fabian; S. Das Sarma

J. Vac. Sci. Technol. B 17, 1708–1715 (1999) https://doi.org/10.1116/1.590813

Abstract

View articletitled, Spin relaxation of conduction electrons

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Kinetics of MnAs growth on GaAs(001) and interface structure

F. Schippan; A. Trampert; L. Däweritz; K. H. Ploog

J. Vac. Sci. Technol. B 17, 1716–1721 (1999) https://doi.org/10.1116/1.590814

Abstract

View articletitled, Kinetics of MnAs growth on GaAs(001) and interface structure

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Reflectance difference spectroscopy and magneto-optical analysis of digital magnetic heterostructures

A. Bonanni; G. Prechtl; W. Heiss; F. Schinagl; S. Holl; H. Krenn; H. Sitter; D. Stifter; K. Hingerl

J. Vac. Sci. Technol. B 17, 1722–1727 (1999) https://doi.org/10.1116/1.590815

Abstract

View articletitled, Reflectance difference spectroscopy and magneto-optical analysis of digital magnetic heterostructures

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Coherent soft x-ray scattering from InP islands on a semiconductor substrate

M. Adamcyk; C. Nicoll; T. Pinnington; T. Tiedje; S. Eisebitt; A. Karl; R. Scherer; W. Eberhardt

J. Vac. Sci. Technol. B 17, 1728–1732 (1999) https://doi.org/10.1116/1.590816

Abstract

View articletitled, Coherent soft x-ray scattering from InP islands on a semiconductor substrate

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Infrared study of Si surfaces and buried interfaces

A. Milekhin; M. Friedrich; K. Hiller; M. Wiemer; T. Gessner; D. R. T. Zahn

J. Vac. Sci. Technol. B 17, 1733–1737 (1999) https://doi.org/10.1116/1.590843

Abstract

View articletitled, Infrared study of Si surfaces and buried interfaces

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Infrared and Raman studies of confined and interface optical phonons in short-period GaAs/AlAs superlattices with a grating coupler

A. Milekhin; M. Rösch; E. Batke; D. R. T. Zahn; K. Köhler; P. Ganser; V. Preobrazhenskii; B. Semyagin

J. Vac. Sci. Technol. B 17, 1738–1741 (1999) https://doi.org/10.1116/1.590817

Abstract

View articletitled, Infrared and Raman studies of confined and interface optical phonons in short-period GaAs/AlAs superlattices with a grating coupler

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PIEZOELECTRIC EFFECTS, MINIGAPS, DEFECT CENTERS, AND DEVICES

Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures

E. T. Yu; X. Z. Dang; P. M. Asbeck; S. S. Lau; G. J. Sullivan

J. Vac. Sci. Technol. B 17, 1742–1749 (1999) https://doi.org/10.1116/1.590818

Abstract

View articletitled, Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures

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Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain

P. M. Bridger; Z. Z. Bandić; E. C. Piquette; T. C. McGill

J. Vac. Sci. Technol. B 17, 1750–1752 (1999) https://doi.org/10.1116/1.590819

Abstract

View articletitled, Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain

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Piezoelectric fields in nitride devices

R. A. Beach; T. C. McGill

J. Vac. Sci. Technol. B 17, 1753–1756 (1999) https://doi.org/10.1116/1.590820

Abstract

View articletitled, Piezoelectric fields in nitride devices

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Minigaps in strained silicon quantum wells on tilted substrates

T. J. Thornton; F. Ge; A. Andresen; D. Pivin; J. Bird; D. K. Ferry

J. Vac. Sci. Technol. B 17, 1757–1760 (1999) https://doi.org/10.1116/1.590821

Abstract

View articletitled, Minigaps in strained silicon quantum wells on tilted substrates

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DX centers in ${Al}_{0.37} {Ga}_{0.63} As/GaAs$ and ${In}_{0.34} {Al}_{0.66} {As/In}_{0.36} {Ga}_{0.64} As$ heterostructures

H. H. Wieder; Huseyin Sari

J. Vac. Sci. Technol. B 17, 1761–1766 (1999) https://doi.org/10.1116/1.590822

Abstract

View articletitled, DX centers in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">0.37</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.63</mi></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.34</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">0.66</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">As/In</mi><mrow><mi mathvariant="normal">0.36</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.64</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> heterostructures

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Behavior of a new ordered structural dopant source in InAs/(001) GaP heterostructures

V. Gopal; E.-H. Chen; E. P. Kvam; J. M. Woodall

J. Vac. Sci. Technol. B 17, 1767–1772 (1999) https://doi.org/10.1116/1.590823

Abstract

View articletitled, Behavior of a new ordered structural dopant source in InAs/(001) GaP heterostructures

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Nanoelectronic device applications of a chemically stable GaAs structure

D. B. Janes; V. R. Kolagunta; M. Batistuta; B. L. Walsh; R. P. Andres; Jia Liu; J. Dicke; J. Lauterbach; T. Pletcher; E. H. Chen; M. R. Melloch; E. L. Peckham; H. J. Ueng; J. M. Woodall; Takhee Lee; R. Reifenberger; C. P. Kubiak; B. Kasibhatla

J. Vac. Sci. Technol. B 17, 1773–1777 (1999) https://doi.org/10.1116/1.590824

Abstract

View articletitled, Nanoelectronic device applications of a chemically stable GaAs structure

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SUPERLATTICES, III-V GROWTH, AND CHARACTERIZATION

Role of ${As}_{4}$ in Ga diffusion on the GaAs(001)-(2×4) surface: A molecular beam epitaxy-scanning tunneling microscopy study

H. Yang; V. P. LaBella; D. W. Bullock; P. M. Thibado

J. Vac. Sci. Technol. B 17, 1778–1780 (1999) https://doi.org/10.1116/1.590825

Abstract

View articletitled, Role of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> in Ga diffusion on the GaAs(001)-(2×4) surface: A molecular beam epitaxy-scanning tunneling microscopy study

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Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices

S. L. Zuo; E. T. Yu; A. A. Allerman; R. M. Biefeld

J. Vac. Sci. Technol. B 17, 1781–1785 (1999) https://doi.org/10.1116/1.590826

Abstract

View articletitled, Cross-sectional scanning tunneling microscopy of InAsSb/InAsP superlattices

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Characterization of AlSb/InAs surfaces and resonant tunneling devices

B. Z. Nosho; W. H. Weinberg; W. Barvosa-Carter; A. S. Bracker; R. Magno; B. R. Bennett; J. C. Culbertson; B. V. Shanabrook; L. J. Whitman

J. Vac. Sci. Technol. B 17, 1786–1790 (1999) https://doi.org/10.1116/1.590827

Abstract

View articletitled, Characterization of AlSb/InAs surfaces and resonant tunneling devices

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Analysis of buried (Al,Ga)As interfaces after molecular-beam epitaxy overgrowth

M. Wassermeier; R. Hey; M. Höricke; E. Wiebicke; H. Kostial

J. Vac. Sci. Technol. B 17, 1791–1794 (1999) https://doi.org/10.1116/1.590828

Abstract

View articletitled, Analysis of buried (Al,Ga)As interfaces after molecular-beam epitaxy overgrowth

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SI/SO(2) AND SI-SI(3)N(4) INTERFACES: DEFECT PROPERTIES AND NOVEL STRUCTURES

Mechanistic studies of silicon oxidation

M. K. Weldon; K. T. Queeney; Y. J. Chabal; B. B. Stefanov; K. Raghavachari

J. Vac. Sci. Technol. B 17, 1795–1802 (1999) https://doi.org/10.1116/1.590829

Abstract

View articletitled, Mechanistic studies of silicon oxidation

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Constraint theory and defect densities at (nanometer ${SiO}_{2}$ -based dielectric)/Si interfaces

J. C. Phillips

J. Vac. Sci. Technol. B 17, 1803–1805 (1999) https://doi.org/10.1116/1.590830

Abstract

View articletitled, Constraint theory and defect densities at (nanometer <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>-based dielectric)/Si interfaces

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Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

G. Lucovsky; Y. Wu; H. Niimi; V. Misra; J. C. Phillips

J. Vac. Sci. Technol. B 17, 1806–1812 (1999) https://doi.org/10.1116/1.590831

Abstract

View articletitled, Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

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Suppression of boron transport out of $p^{+}$ polycrystalline silicon at polycrystalline silicon dielectric interfaces

Y. Wu; H. Niimi; H. Yang; G. Lucovsky; R. B. Fair

J. Vac. Sci. Technol. B 17, 1813–1822 (1999) https://doi.org/10.1116/1.590832

Abstract

View articletitled, Suppression of boron transport out of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>p</mi><mrow><mi>+</mi></mrow></msup></math> polycrystalline silicon at polycrystalline silicon dielectric interfaces

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Energy-dependent conduction band mass of ${SiO}_{2}$ determined by ballistic electron emission microscopy

R. Ludeke; Andreas Schenk

J. Vac. Sci. Technol. B 17, 1823–1830 (1999) https://doi.org/10.1116/1.590833

Abstract

View articletitled, Energy-dependent conduction band mass of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> determined by ballistic electron emission microscopy

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Band offsets for ultrathin ${SiO}_{2}$ and ${Si}_{3} N_{4}$ films on Si(111) and Si(100) from photoemission spectroscopy

J. W. Keister; J. E. Rowe; J. J. Kolodziej; H. Niimi; T. E. Madey; G. Lucovsky

J. Vac. Sci. Technol. B 17, 1831–1835 (1999) https://doi.org/10.1116/1.590834

Abstract

View articletitled, Band offsets for ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>4</mn></mrow></msub></math> films on Si(111) and Si(100) from photoemission spectroscopy

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Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

V. Misra; H. Lazar; Z. Wang; Y. Wu; H. Niimi; G. Lucovsky; J. J. Wortman; J. R. Hauser

J. Vac. Sci. Technol. B 17, 1836–1839 (1999) https://doi.org/10.1116/1.590835

Abstract

View articletitled, Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

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Remote plasma enhanced chemical vapor deposition ${SiO}_{2}$ in silicon based nanostructures

M. J. Rack; L. L. Hilt; D. Vasileska; D. K. Ferry

J. Vac. Sci. Technol. B 17, 1840–1847 (1999) https://doi.org/10.1116/1.590836

Abstract

View articletitled, Remote plasma enhanced chemical vapor deposition <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> in silicon based nanostructures

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Self-organization in ${Si/CoSi}_{2} (111)$ heteroepitaxy

T. Meyer; M. Klemenc; T. Graf; H. von Känel

J. Vac. Sci. Technol. B 17, 1848–1851 (1999) https://doi.org/10.1116/1.590837

Abstract

View articletitled, Self-organization in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/CoSi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mtext xmlns="">(111)</mtext></math> heteroepitaxy

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NOVEL GROWTH, NANO-MACHINING, AND CHARACTERIZATION

Comparison of nanomachined III–V semiconductor substrates

L. Grazulis; D. L. Kelly; D. E. Walker, Jr.; D. H. Tomich; K. G. Eyink; W. V. Lampert

J. Vac. Sci. Technol. B 17, 1852–1855 (1999) https://doi.org/10.1116/1.590844

Abstract

View articletitled, Comparison of nanomachined III–V semiconductor substrates

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Properties of nanometer-sized metal–semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process

Hideki Hasegawa; Taketomo Sato; Chinami Kaneshiro

J. Vac. Sci. Technol. B 17, 1856–1866 (1999) https://doi.org/10.1116/1.590838

Abstract

View articletitled, Properties of nanometer-sized metal–semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process

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Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities

Winfried Mönch

J. Vac. Sci. Technol. B 17, 1867–1876 (1999) https://doi.org/10.1116/1.590839

Abstract

View articletitled, Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities

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In situ electrical determination of reaction kinetics and interface properties at molecular beam epitaxy grown metal/semiconductor interfaces

L. C. Chen; C. J. Palmstro/m

J. Vac. Sci. Technol. B 17, 1877–1883 (1999) https://doi.org/10.1116/1.590845

Abstract

View articletitled, In situ electrical determination of reaction kinetics and interface properties at molecular beam epitaxy grown metal/semiconductor interfaces

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Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces

Y. Yang; S. Mishra; F. Cerrina; S. H. Xu; H. Cruguel; G. J. Lapeyre; J. F. Schetzina

J. Vac. Sci. Technol. B 17, 1884–1890 (1999) https://doi.org/10.1116/1.590840

Abstract

View articletitled, Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces

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PAPERS FROM THE 26TH CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES

DIELECTRICS, QUANTUM DOTS, AND OPTOELECTRONIC INTERFACES

NITRIDE EPITAXY, PHOTONIC PROBES, AND BAND OFFSETS

MAGNETIC INTERFACES AND PHOTON SCATTERING

PIEZOELECTRIC EFFECTS, MINIGAPS, DEFECT CENTERS, AND DEVICES

SUPERLATTICES, III-V GROWTH, AND CHARACTERIZATION

SI/SO(2) AND SI-SI(3)N(4) INTERFACES: DEFECT PROPERTIES AND NOVEL STRUCTURES

NOVEL GROWTH, NANO-MACHINING, AND CHARACTERIZATION

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