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November 1998
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Electrical transport and far-infrared transmission in a quantum wire array
J. Vac. Sci. Technol. B 16, 2915–2927 (1998)
https://doi.org/10.1116/1.590368
Luminescence from erbium implanted silicon–germanium quantum wells
J. Vac. Sci. Technol. B 16, 2928–2933 (1998)
https://doi.org/10.1116/1.590320
Optical absorption of Ag nanoclusters in -implanted
J. Vac. Sci. Technol. B 16, 2934–2937 (1998)
https://doi.org/10.1116/1.590321
Silicon nanopillars formed with gold colloidal particle masking
J. Vac. Sci. Technol. B 16, 2938–2941 (1998)
https://doi.org/10.1116/1.590322
Detection and control of ferroelectric domains by an electrostatic force microscope
J. Vac. Sci. Technol. B 16, 2942–2946 (1998)
https://doi.org/10.1116/1.590323
Atomistic study of nickel silicide structures on Si(100) by tunneling microscopy
J. Vac. Sci. Technol. B 16, 2947–2951 (1998)
https://doi.org/10.1116/1.590324
Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope
J. Vac. Sci. Technol. B 16, 2952–2956 (1998)
https://doi.org/10.1116/1.590325
Plasma polymer films for 532 nm laser micromachining
J. Vac. Sci. Technol. B 16, 2957–2967 (1998)
https://doi.org/10.1116/1.590326
Nonstatistical degradation and development characteristics of poly(methylmethacrylate) based resists during electron beam exposure
J. Vac. Sci. Technol. B 16, 2968–2973 (1998)
https://doi.org/10.1116/1.590327
Electrical conductivity measurement for quantitative evaluation of development speed of a photoresist
J. Vac. Sci. Technol. B 16, 2974–2976 (1998)
https://doi.org/10.1116/1.590328
Fabrication of submicron suspended structures by laser and atomic force microscopy lithography on aluminum combined with reactive ion etching
J. Vac. Sci. Technol. B 16, 2977–2981 (1998)
https://doi.org/10.1116/1.590329
Submicrometer transmission mask fabricated by low-temperature reactive ion etching and focused ion beam
J. Vac. Sci. Technol. B 16, 2982–2985 (1998)
https://doi.org/10.1116/1.590330
Cleaning of plasma-etched via structures using a hydrogen plasma, an oxygen plasma, and hexafluoroacetylacetone vapors
J. Vac. Sci. Technol. B 16, 2986–2995 (1998)
https://doi.org/10.1116/1.590331
Endpoint uniformity sensing and analysis in silicon dioxide plasma etching using in situ mass spectrometry
J. Vac. Sci. Technol. B 16, 2996–3002 (1998)
https://doi.org/10.1116/1.590332
reactive ion etching for gate recessing of GaInP/InGaAs/GaAs pseudomorphic high electron mobility transistors
J. Vac. Sci. Technol. B 16, 3003–3007 (1998)
https://doi.org/10.1116/1.590369
Interaction between gas rarefaction and metal ionization in ionized physical vapor deposition
J. Vac. Sci. Technol. B 16, 3008–3012 (1998)
https://doi.org/10.1116/1.590333
Atomically flat gold film surfaces deposited on Si (111) surfaces at room temperature
J. Vac. Sci. Technol. B 16, 3013–3014 (1998)
https://doi.org/10.1116/1.590334
Correlation between the early stage of copper metal organic chemical vapor deposition and the material properties of thin film
J. Vac. Sci. Technol. B 16, 3015–3020 (1998)
https://doi.org/10.1116/1.590335
Properties of sputtered Cr–O and reactively sputtered Cr–N–O as passivation layers against copper oxidation
J. Vac. Sci. Technol. B 16, 3021–3026 (1998)
https://doi.org/10.1116/1.590336
Role of V-shaped stacking faults in -type ZnMgSSe:Cl Schottky diodes
J. Vac. Sci. Technol. B 16, 3027–3031 (1998)
https://doi.org/10.1116/1.590337
Interface characterization of heterostructures after high temperature annealing
J. Vac. Sci. Technol. B 16, 3032–3040 (1998)
https://doi.org/10.1116/1.590338
Reduction of oxygen contamination in InGaP and AlGaInP films grown by solid source molecular beam epitaxy
J. Vac. Sci. Technol. B 16, 3041–3047 (1998)
https://doi.org/10.1116/1.590339
Surface chemistry of II–VI semiconductor ZnSe studied by time of flight secondary ion mass spectrometry and x-ray photoelectron spectroscopy
J. Vac. Sci. Technol. B 16, 3048–3054 (1998)
https://doi.org/10.1116/1.590340
Evaluation of development speed of a photoresist by means of electrical conductivity measurement
J. Vac. Sci. Technol. B 16, 3055–3058 (1998)
https://doi.org/10.1116/1.590341
Investigation of diffusion barrier for high density memory capacitor applications
J. Vac. Sci. Technol. B 16, 3059–3064 (1998)
https://doi.org/10.1116/1.590342
Vacuum properties of a new panel structure for field emission displays
J. Vac. Sci. Technol. B 16, 3069–3072 (1998)
https://doi.org/10.1116/1.590344
Effect of on the electron emission characteristics of active molybdenum field emitter arrays
J. Vac. Sci. Technol. B 16, 3073–3076 (1998)
https://doi.org/10.1116/1.590444
Experimental demonstration of the validity of accelerated radiation damage testing of x-ray mask materials
J. Vac. Sci. Technol. B 16, 3097–3098 (1998)
https://doi.org/10.1116/1.590447
Sputtering rate change and surface roughening during oblique and normal incidence bombardment of silicon, with and without oxygen flooding
J. Vac. Sci. Technol. B 16, 3099–3104 (1998)
https://doi.org/10.1116/1.590370
Ohmic contacts to p-type GaN using a Ni/Pt/Au metallization scheme
J. Vac. Sci. Technol. B 16, 3105–3107 (1998)
https://doi.org/10.1116/1.590448
Thermally induced interface degradation in (100) and (111) analyzed by electron spin resonance
J. Vac. Sci. Technol. B 16, 3108–3111 (1998)
https://doi.org/10.1116/1.590449
Enabling in situ atomic-scale characterization of epitaxial surfaces and interfaces
J. Vac. Sci. Technol. B 16, 3112–3114 (1998)
https://doi.org/10.1116/1.590496
Atom technology project: Recent activities
J. Vac. Sci. Technol. B 16, 3127–3131 (1998)
https://doi.org/10.1116/1.590450
Nanofabrication in cellular engineering
J. Vac. Sci. Technol. B 16, 3132–3136 (1998)
https://doi.org/10.1116/1.590451
Extreme ultraviolet lithography
J. Vac. Sci. Technol. B 16, 3142–3149 (1998)
https://doi.org/10.1116/1.590453
Ion projection lithography: Status of the MEDEA project and United States/European cooperation
J. Vac. Sci. Technol. B 16, 3150–3153 (1998)
https://doi.org/10.1116/1.590454
Critical issues in 157 nm lithography
J. Vac. Sci. Technol. B 16, 3154–3157 (1998)
https://doi.org/10.1116/1.590455
Electron beam lithography process for advanced optical masks
J. Vac. Sci. Technol. B 16, 3158–3163 (1998)
https://doi.org/10.1116/1.590456
EL5: One tool for advanced x-ray and chrome on glass mask making
M. A. Sturans; J. G. Hartley; H. C. Pfeiffer; R. S. Dhaliwal; T. R. Groves; J. W. Pavick; R. J. Quickle; C. S. Clement; G. J. Dick; W. A. Enichen; M. S. Gordon; R. A. Kendall; C. A. Kostek; D. J. Pinckney; C. F. Robinson; J. D. Rockrohr; J. M. Safran; J. J. Senesi; E. V. Tressler
J. Vac. Sci. Technol. B 16, 3164–3167 (1998)
https://doi.org/10.1116/1.590457
Distributed, multiple variable shaped electron beam column for high throughput maskless lithography
J. Vac. Sci. Technol. B 16, 3168–3173 (1998)
https://doi.org/10.1116/1.590458
Multiplexed blanker array for parallel electron beam lithography
J. Vac. Sci. Technol. B 16, 3174–3176 (1998)
https://doi.org/10.1116/1.590345
High throughput electron lithography with the multiple aperture pixel by pixel enhancement of resolution concept
J. Vac. Sci. Technol. B 16, 3177–3180 (1998)
https://doi.org/10.1116/1.590346
Experimental evaluation of a miniature electrostatic thin-foil electron optical column for high current and low-voltage operation
J. Vac. Sci. Technol. B 16, 3181–3184 (1998)
https://doi.org/10.1116/1.590347
Micromachined ultrasharp silicon and diamond-coated silicon tip as a stable field-emission electron source and a scanning probe microscopy sensor with atomic sharpness
I. W. Rangelow; F. Shi; P. Hudek; P. Grabiec; B. Volland; E. I. Givargizov; A. N. Stepanova; L. N. Obolenskaya; E. S. Mashkova; V. A. Molchanov
J. Vac. Sci. Technol. B 16, 3185–3191 (1998)
https://doi.org/10.1116/1.590348
Patterned negative electron affinity photocathodes for maskless electron beam lithography
J. E. Schneider; P. Sen; D. S. Pickard; G. I. Winograd; M. A. McCord; R. F. W. Pease; W. E. Spicer; A. W. Baum; K. A. Costello; G. A. Davis
J. Vac. Sci. Technol. B 16, 3192–3196 (1998)
https://doi.org/10.1116/1.590349
Critical dimension control at stitched subfield boundaries in a high-throughput system
J. Vac. Sci. Technol. B 16, 3197–3201 (1998)
https://doi.org/10.1116/1.590350
Pattern dependent alignment technique for mix-and-match electron-beam lithography with optical lithography
Yasuko Gotoh; Yasunari Sohda; Norio Saitou; Tsutomu Tawa; Takashi Matsuzaka; Naoko Asai; Katsuya Hayano; Norio Hasegawa
J. Vac. Sci. Technol. B 16, 3202–3205 (1998)
https://doi.org/10.1116/1.590351
Electron-optical optimization for Gaussian, high-current, high-dose columns
J. Vac. Sci. Technol. B 16, 3206–3210 (1998)
https://doi.org/10.1116/1.590352
Simulation of Coulomb interactions in electron beam lithography systems—A comparison of theoretical models
J. Vac. Sci. Technol. B 16, 3211–3214 (1998)
https://doi.org/10.1116/1.590353
Performance investigation of Coulomb interaction-limited high throughput electron beam lithography based on empirical modeling
J. Vac. Sci. Technol. B 16, 3215–3220 (1998)
https://doi.org/10.1116/1.590354
Rigorous simulation of statistical electron–electron interactions with fast multipole acceleration and a network of workstations
J. Vac. Sci. Technol. B 16, 3221–3226 (1998)
https://doi.org/10.1116/1.590355
Mask electron modeling for Coulomb interaction by mask-scattered electrons in electron-beam projection lithography
J. Vac. Sci. Technol. B 16, 3227–3231 (1998)
https://doi.org/10.1116/1.590356
Fabrication of electron beam generated, chirped, phase mask (1070.11–1070.66 nm) for fiber Bragg grating dispersion compensator
R. C. Tiberio; D. W. Carr; M. J. Rooks; S. J. Mihailov; F. Bilodeau; J. Albert; D. Stryckman; D. C. Johnson; K. O. Hill; A. W. McClelland; B. J. Hughes
J. Vac. Sci. Technol. B 16, 3237–3240 (1998)
https://doi.org/10.1116/1.590358
Experimental verification of the TEMPTATION (temperature simulation) software tool
J. Vac. Sci. Technol. B 16, 3241–3247 (1998)
https://doi.org/10.1116/1.590359
Lie algebraic aberration theory and calculation method for combined electron beam focusing-deflection systems
J. Vac. Sci. Technol. B 16, 3248–3255 (1998)
https://doi.org/10.1116/1.590371
Characterizing GHOST proximity effect correction effectiveness by determining the worst-case error
J. Vac. Sci. Technol. B 16, 3256–3261 (1998)
https://doi.org/10.1116/1.590360
Accuracy and efficiency in electron beam proximity effect correction
J. Vac. Sci. Technol. B 16, 3262–3268 (1998)
https://doi.org/10.1116/1.590361
Adaptive selection of control points for improving accuracy and speed of proximity effect correction
J. Vac. Sci. Technol. B 16, 3269–3274 (1998)
https://doi.org/10.1116/1.590362
Parallel and hierarchical postprocessing for variable spot electron beam lithography
J. Vac. Sci. Technol. B 16, 3275–3278 (1998)
https://doi.org/10.1116/1.590363
Mask bias requirement for 0.13 μm e-beam block exposure lithography
J. Vac. Sci. Technol. B 16, 3279–3283 (1998)
https://doi.org/10.1116/1.590364
Comparative study of AZPN114 and SAL601 chemically amplified resists for electron beam nanolithography
J. Vac. Sci. Technol. B 16, 3284–3288 (1998)
https://doi.org/10.1116/1.590365
Comparison of negative resists for 100 nm electron-beam direct write and mask making applications
J. Vac. Sci. Technol. B 16, 3289–3293 (1998)
https://doi.org/10.1116/1.590366
Electronic desorption of alkyl monolayers from silicon by very highly charged ions
T. Schenkel; M. Schneider; M. Hattass; M. W. Newman; A. V. Barnes; A. V. Hamza; D. H. Schneider; R. L. Cicero; C. E. D. Chidsey
J. Vac. Sci. Technol. B 16, 3298–3300 (1998)
https://doi.org/10.1116/1.590372
Red luminescence from a focused ion beam modified silicon surface
J. Vac. Sci. Technol. B 16, 3301–3304 (1998)
https://doi.org/10.1116/1.590373
In situ focused ion beam definition of high current density resonant tunneling diodes
J. Vac. Sci. Technol. B 16, 3305–3310 (1998)
https://doi.org/10.1116/1.590374
Study of precursor gases for focused ion beam insulator deposition
J. Vac. Sci. Technol. B 16, 3311–3314 (1998)
https://doi.org/10.1116/1.590497
Influence of edge roughness in resist patterns on etched patterns
J. Vac. Sci. Technol. B 16, 3315–3321 (1998)
https://doi.org/10.1116/1.590375
Dry development in an plasma for sub-0.18 μm top layer imaging processes
J. Vac. Sci. Technol. B 16, 3322–3333 (1998)
https://doi.org/10.1116/1.590376
Can dry-etching systems be designed for low damage ab initio?
J. Vac. Sci. Technol. B 16, 3334–3338 (1998)
https://doi.org/10.1116/1.590377
Observation of the trajectories of particles in process equipment by an in situ monitoring system using a laser light scattering method
J. Vac. Sci. Technol. B 16, 3339–3343 (1998)
https://doi.org/10.1116/1.590378
Fabrication of Cu interconnects of 50 nm linewidth by electron-beam lithography and high-density plasma etching
Y. Hsu; T. E. F. M. Standaert; G. S. Oehrlein; T. S. Kuan; E. Sayre; K. Rose; K. Y. Lee; S. M. Rossnagel
J. Vac. Sci. Technol. B 16, 3344–3348 (1998)
https://doi.org/10.1116/1.590379
Patterning of thin film NiMnSb using inductively coupled plasma etching
J. Vac. Sci. Technol. B 16, 3349–3353 (1998)
https://doi.org/10.1116/1.590380
Metallization-induced damage in III–V semiconductors
J. Vac. Sci. Technol. B 16, 3354–3358 (1998)
https://doi.org/10.1116/1.590381
Electrical and optical characteristics of etch induced damage in InGaAs
J. Vac. Sci. Technol. B 16, 3359–3363 (1998)
https://doi.org/10.1116/1.590459
Kinetics of Si growth by an electron-beam-irradiation technique using a source
J. Vac. Sci. Technol. B 16, 3364–3366 (1998)
https://doi.org/10.1116/1.590304
Plasma source for ion and electron beam lithography
Y. Lee; R. A. Gough; K. N. Leung; J. Vujic; M. D. Williams; N. Zahir; W. Fallman; M. Tockler; W. Bruenger
J. Vac. Sci. Technol. B 16, 3367–3369 (1998)
https://doi.org/10.1116/1.590460
Characteristics of focused beam spots using negative ion beams from a compact surface plasma source and merits for new applications
J. Vac. Sci. Technol. B 16, 3370–3373 (1998)
https://doi.org/10.1116/1.590461
OS3: Photoemission from gold thin films for application in multiphotocathode arrays for electron beam lithography
J. Vac. Sci. Technol. B 16, 3374–3379 (1998)
https://doi.org/10.1116/1.590462
Lifetime and reliability results for a negative electron affinity photocathode in a demountable vacuum system
J. Vac. Sci. Technol. B 16, 3380–3384 (1998)
https://doi.org/10.1116/1.590463
Electron scattering and transmission through SCALPEL masks
M. M. Mkrtchyan; J. A. Liddle; A. E. Novembre; W. K. Waskiewicz; G. P. Watson; L. R. Harriott; D. A. Muller
J. Vac. Sci. Technol. B 16, 3385–3391 (1998)
https://doi.org/10.1116/1.590464
Imaging interferometric lithography: A wavelength division multiplex approach to extending optical lithography
J. Vac. Sci. Technol. B 16, 3392–3397 (1998)
https://doi.org/10.1116/1.590465
0.18 μm KrF lithography using optical proximity correction based on empirical behavior modeling
J. Vac. Sci. Technol. B 16, 3398–3404 (1998)
https://doi.org/10.1116/1.590466
Influences of off-axis illumination on optical lens aberration
J. Vac. Sci. Technol. B 16, 3405–3410 (1998)
https://doi.org/10.1116/1.590467
Investigation of new overlay measurement marks for optical lithography
J. Vac. Sci. Technol. B 16, 3415–3418 (1998)
https://doi.org/10.1116/1.590469
Thermal annealing of deep ultraviolet (193 nm) induced compaction in fused silica
J. Vac. Sci. Technol. B 16, 3419–3421 (1998)
https://doi.org/10.1116/1.590470
Light-coupling masks: An alternative, lensless approach to high-resolution optical contact lithography
J. Vac. Sci. Technol. B 16, 3422–3425 (1998)
https://doi.org/10.1116/1.590471
At-wavelength detection of extreme ultraviolet lithography mask blank defects
Seongtae Jeong; Mourad Idir; Yun Lin; Lewis Johnson; Seno Rekawa; Michael Jones; Paul Denham; Phil Batson; Rick Levesque; Patrick Kearney; Pei-Yang Yan; Eric Gullikson; James H. Underwood; Jeffrey Bokor
J. Vac. Sci. Technol. B 16, 3430–3434 (1998)
https://doi.org/10.1116/1.590473
High-accuracy interferometry of extreme ultraviolet lithographic optical systems
Kenneth A. Goldberg; Patrick Naulleau; Sang Lee; Cynthia Bresloff; Craig Henderson; David Attwood; Jeffrey Bokor
J. Vac. Sci. Technol. B 16, 3435–3439 (1998)
https://doi.org/10.1116/1.590498
Thermal–mechanical performance of extreme ultraviolet lithographic reticles
J. Vac. Sci. Technol. B 16, 3440–3443 (1998)
https://doi.org/10.1116/1.590474
Rigorous simulation of mask corner effects in extreme ultraviolet lithography
J. Vac. Sci. Technol. B 16, 3449–3455 (1998)
https://doi.org/10.1116/1.590476
Aspheric collimator for a point source x-ray lithography system
J. Vac. Sci. Technol. B 16, 3456–3461 (1998)
https://doi.org/10.1116/1.590477
Advanced synchrotron radiation stepper alignment system performance
J. Vac. Sci. Technol. B 16, 3466–3470 (1998)
https://doi.org/10.1116/1.590478
Nanometer scattered-light alignment system using SiC x-ray masks with low optical transparency
J. Vac. Sci. Technol. B 16, 3471–3475 (1998)
https://doi.org/10.1116/1.590479
Mask membrane deflection caused by mask tilt during the wafer stepping motion in x-ray steppers
J. Vac. Sci. Technol. B 16, 3480–3484 (1998)
https://doi.org/10.1116/1.590481
Properties of sputtered TaReGe used as an x-ray mask absorber material
J. Vac. Sci. Technol. B 16, 3491–3494 (1998)
https://doi.org/10.1116/1.590483
Characteristics of Ta-based amorphous alloy film for x-ray mask absorbers
J. Vac. Sci. Technol. B 16, 3495–3499 (1998)
https://doi.org/10.1116/1.590484
Temperature gradients during absorber etching and their effect on x-ray mask patterning
S. V. Pendharkar; D. J. Resnick; M. F. Laudon; W. J. Dauksher; P. J. S. Mangat; P. A. Seese; K. D. Cummings
J. Vac. Sci. Technol. B 16, 3500–3503 (1998)
https://doi.org/10.1116/1.590485
Low-dose exposure technique for 100-nm-diam hole replication in x-ray lithography
J. Vac. Sci. Technol. B 16, 3504–3508 (1998)
https://doi.org/10.1116/1.590486
130 nm and 150 nm line-and-space critical-dimension control evaluation using XS-1 x-ray stepper
Y. Tanaka; T. Taguchi; K. Fujii; S. Tsuboi; M. Yamabe; K. Suzuki; Y. Gomei; T. Hisatsugu; M. Fukuda; H. Morita
J. Vac. Sci. Technol. B 16, 3509–3514 (1998)
https://doi.org/10.1116/1.590487
Characterization of pattern geometrical effect on line end shortening in x-ray lithography
J. Vac. Sci. Technol. B 16, 3515–3520 (1998)
https://doi.org/10.1116/1.590488
Edge diffraction enhanced printability in x-ray nanolithography
J. Vac. Sci. Technol. B 16, 3521–3525 (1998)
https://doi.org/10.1116/1.590489
Surface photochemistry induced by x-ray irradiation
J. Vac. Sci. Technol. B 16, 3535–3538 (1998)
https://doi.org/10.1116/1.590491
Enhanced adhesion buffer layer for deep x-ray lithography using hard x rays
J. Vac. Sci. Technol. B 16, 3539–3542 (1998)
https://doi.org/10.1116/1.590492
Adhesion promotion between poly(methylmethacrylate) and metallic surfaces for LiGA evaluated by shear stress measurements
J. Vac. Sci. Technol. B 16, 3543–3546 (1998)
https://doi.org/10.1116/1.590493
Influence of developer temperature and resist material on the structure quality in deep x-ray lithography
J. Vac. Sci. Technol. B 16, 3547–3551 (1998)
https://doi.org/10.1116/1.590494
Assessment of thermal loading-induced distortions in optical photomasks due to e-beam multipass patterning
J. Vac. Sci. Technol. B 16, 3558–3562 (1998)
https://doi.org/10.1116/1.590306
Aerial image slope and proximity effects on critical dimensions in mask lithography
J. Vac. Sci. Technol. B 16, 3563–3566 (1998)
https://doi.org/10.1116/1.590307
Improving pattern placement using through-the-membrane signal monitoring
J. Vac. Sci. Technol. B 16, 3567–3571 (1998)
https://doi.org/10.1116/1.590499
Pattern transfer on mask membranes
J. Vac. Sci. Technol. B 16, 3572–3576 (1998)
https://doi.org/10.1116/1.590308
Etching processes and characteristics for the fabrication of refractory x-ray masks
J. Vac. Sci. Technol. B 16, 3577–3581 (1998)
https://doi.org/10.1116/1.590309
Commercialization of SCALPEL masks
R. C. Farrow; A. E. Novembre; M. Peabody; R. Kasica; M. Blakey; J. A. Liddle; K. Werder; R. DeMarco; L. Ocola; L. Rutberg; T. Saunders; J. Unruh; F. Qian; M. Smith
J. Vac. Sci. Technol. B 16, 3582–3586 (1998)
https://doi.org/10.1116/1.590310
Dynamic analysis of a SCALPEL mask during electron-beam exposure
J. Vac. Sci. Technol. B 16, 3587–3591 (1998)
https://doi.org/10.1116/1.590311
p-n junction-based wafer flow process for stencil mask fabrication
I. W. Rangelow; F. Shi; B. Volland; E. Sossna; A. Petrashenko; P. Hudek; R. Sunyk; I. Kostic; J. Butschke; F. Letzkus; R. Springer; A. Ehrmann; G. Gross; R. Kaesmaier; A. Oelmann; T. Struck; G. Unger; A. Chalupka; E. Haugeneder; G. Lammer; H. Löschner; R. Tejeda; E. Lovell; R. Engelstad
J. Vac. Sci. Technol. B 16, 3592–3598 (1998)
https://doi.org/10.1116/1.590500
Fabrication of silicon stencil masks with vitreous carbon ion-absorbing coatings
P. Ruchhoeft; J. C. Wolfe; J. Wasson; J. Torres; H. Wu; H. Nounu; N. Liu; M. Herbordt; M. D. Morgan; R. C. Tiberio
J. Vac. Sci. Technol. B 16, 3599–3601 (1998)
https://doi.org/10.1116/1.590385
Optimization of the temperature distribution across stencil mask membranes under ion beam exposure
B. Kim; R. Engelstad; E. Lovell; A. Chalupka; E. Haugeneder; G. Lammer; H. Löschner; J. Lutz; G. Stengl
J. Vac. Sci. Technol. B 16, 3602–3605 (1998)
https://doi.org/10.1116/1.590312
Optically induced mask critical dimension error magnification in 248 nm lithography
J. Vac. Sci. Technol. B 16, 3606–3611 (1998)
https://doi.org/10.1116/1.590313
Characteristics of plasma enhanced chemical vapor deposition-grown films prepared for deep ultraviolet attenuated phase-shifting masks
J. Vac. Sci. Technol. B 16, 3612–3617 (1998)
https://doi.org/10.1116/1.590314
Graphite-based x-ray masks for deep and ultradeep x-ray lithography
J. Vac. Sci. Technol. B 16, 3618–3624 (1998)
https://doi.org/10.1116/1.590315
Application of interferometric broadband imaging alignment on an experimental x-ray stepper
J. Vac. Sci. Technol. B 16, 3631–3636 (1998)
https://doi.org/10.1116/1.590317
Performance of adaptive alignment method on asymmetric signals
J. Vac. Sci. Technol. B 16, 3637–3641 (1998)
https://doi.org/10.1116/1.590318
Exploiting structure of wafer distortion in global alignment
J. Vac. Sci. Technol. B 16, 3642–3646 (1998)
https://doi.org/10.1116/1.590319
Phase shift microscopes
J. Vac. Sci. Technol. B 16, 3647–3650 (1998)
https://doi.org/10.1116/1.590383
Quantitation of latent resist images using photon tunneling microscopy
J. Vac. Sci. Technol. B 16, 3651–3654 (1998)
https://doi.org/10.1116/1.590384
Economical sampling algorithm using Fourier analysis for mapping wafer critical dimension variations
J. Vac. Sci. Technol. B 16, 3655–3660 (1998)
https://doi.org/10.1116/1.590386
Evaluation of total uncertainty in the dimension measurements using critical-dimension measurement scanning electron microscopes
J. Vac. Sci. Technol. B 16, 3661–3667 (1998)
https://doi.org/10.1116/1.590387
Whole film inspection using an extended source
J. Vac. Sci. Technol. B 16, 3668–3671 (1998)
https://doi.org/10.1116/1.590388
Scintillating global-fiducial grid for electron-beam lithography
J. Vac. Sci. Technol. B 16, 3672–3675 (1998)
https://doi.org/10.1116/1.590389
Resist processes for hybrid (electron-beam/deep ultraviolet) lithography
S. Tedesco; T. Mourier; B. Dal’zotto; A. McDougall; S. Blanc-Coquant; Y. Quéré; P. J. Paniez; B. Mortini
J. Vac. Sci. Technol. B 16, 3676–3683 (1998)
https://doi.org/10.1116/1.590390
Deep-ultraviolet interferometric lithography as a tool for assessment of chemically amplified photoresist performance
J. Vac. Sci. Technol. B 16, 3689–3694 (1998)
https://doi.org/10.1116/1.590392
Nanolithography in polymethylmethacrylate: An atomic force microscope study
J. Vac. Sci. Technol. B 16, 3695–3700 (1998)
https://doi.org/10.1116/1.590501
Copolymer approach to charge-dissipating electron-beam resists
J. Vac. Sci. Technol. B 16, 3701–3704 (1998)
https://doi.org/10.1116/1.590393
Negative chemically amplified resist characterization for direct write and SCALPEL nanolithography
J. Vac. Sci. Technol. B 16, 3705–3708 (1998)
https://doi.org/10.1116/1.590394
Chemically amplified resist processing with top coats for deep-ultraviolet and e-beam applications
J. Vac. Sci. Technol. B 16, 3709–3715 (1998)
https://doi.org/10.1116/1.590395
193 nm single layer resist strategies, concepts, and recent results
O. Nalamasu; F. M. Houlihan; R. A. Cirelli; A. G. Timko; G. P. Watson; R. S. Hutton; J. M. Kometani; E. Reichmanis; A. Gabor; A. Medina; S. Slater
J. Vac. Sci. Technol. B 16, 3716–3721 (1998)
https://doi.org/10.1116/1.590396
Top surface imaging process and materials development for 193 nm and extreme ultraviolet lithography
Veena Rao; John Hutchinson; Susan Holl; Joseph Langston; Craig Henderson; David R. Wheeler; Greg Cardinale; Donna O’Connell; John Goldsmith; John Bohland; Gary Taylor; Roger Sinta
J. Vac. Sci. Technol. B 16, 3722–3725 (1998)
https://doi.org/10.1116/1.590397
Dissolution characteristics of chemically amplified 193 nm resists
Toshiro Itani; Hiroshi Yoshino; Shuichi Hashimoto; Mitsuharu Yamana; Mami Miyasaka; Hiroyoshi Tanabe
J. Vac. Sci. Technol. B 16, 3726–3729 (1998)
https://doi.org/10.1116/1.590502
Single layer chemical vapor deposition photoresist for 193 nm deep ultraviolet photolithography
J. Vac. Sci. Technol. B 16, 3730–3733 (1998)
https://doi.org/10.1116/1.590398
Resist design for resolution limit of KrF imaging towards 130 nm lithography
J. Vac. Sci. Technol. B 16, 3734–3738 (1998)
https://doi.org/10.1116/1.590399
Reduction of line edge roughness in the top surface imaging process
Shigeyasu Mori; Taku Morisawa; Nobuyuki Matsuzawa; Yuko Kaimoto; Masayuki Endo; Takahiro Matsuo; Koichi Kuhara; Masaru Sasago
J. Vac. Sci. Technol. B 16, 3739–3743 (1998)
https://doi.org/10.1116/1.590409
Pattern collapse in the top surface imaging process after dry development
Shigeyasu Mori; Taku Morisawa; Nobuyuki Matsuzawa; Yuko Kaimoto; Masayuki Endo; Takahiro Matsuo; Koichi Kuhara; Masaru Sasago
J. Vac. Sci. Technol. B 16, 3744–3747 (1998)
https://doi.org/10.1116/1.590400
Process dependence of roughness in a positive-tone chemically amplified resist
J. Vac. Sci. Technol. B 16, 3748–3751 (1998)
https://doi.org/10.1116/1.590401
Novel methodology for postexposure bake calibration and optimization based on electrical linewidth measurement and process metamodeling
Luigi Capodieci; Ramkumar Subramanian; Bharath Rangarajan; William D. Heavlin; Jiangwei Li; Doug A. Bernard; Victor V. Boksha
J. Vac. Sci. Technol. B 16, 3752–3758 (1998)
https://doi.org/10.1116/1.590402
On-wafer photoacid determination and imaging technique for chemically amplified photoresists
Paul M. Dentinger; Bing Lu; James W. Taylor; Scott J. Bukofsky; Gilbert D. Feke; Dan Hessman; Robert D. Grober
J. Vac. Sci. Technol. B 16, 3767–3772 (1998)
https://doi.org/10.1116/1.590404
Electron-beam nanolithography, acid diffusion, and chemical kinetics in SAL-601
J. Vac. Sci. Technol. B 16, 3773–3778 (1998)
https://doi.org/10.1116/1.590405
Modeling solvent diffusion in photoresist
J. Vac. Sci. Technol. B 16, 3779–3783 (1998)
https://doi.org/10.1116/1.590406
Shot-noise and edge roughness effects in resists patterned at 10 nm exposure
Nicholas Rau; Fred Stratton; Charles Fields; Taro Ogawa; Andrew Neureuther; Randy Kubena; Grant Willson
J. Vac. Sci. Technol. B 16, 3784–3788 (1998)
https://doi.org/10.1116/1.590407
Coulomb blockade devices fabricated by liquid metal ion source droplet deposition
J. Vac. Sci. Technol. B 16, 3789–3794 (1998)
https://doi.org/10.1116/1.590408
Demonstration of a functional quantum-dot cellular automata cell
J. Vac. Sci. Technol. B 16, 3795–3799 (1998)
https://doi.org/10.1116/1.590410
Fabrication of self-aligned metallic Coulomb blockade devices on Si nanowires
J. Vac. Sci. Technol. B 16, 3800–3803 (1998)
https://doi.org/10.1116/1.590411
Direct patterning of single electron tunneling transistors by high resolution electron beam lithography on highly doped molecular beam epitaxy grown silicon films
T. Koester; F. Goldschmidtboeing; B. Hadam; J. Stein; S. Altmeyer; B. Spangenberg; H. Kurz; R. Neumann; K. Brunner; G. Abstreiter
J. Vac. Sci. Technol. B 16, 3804–3807 (1998)
https://doi.org/10.1116/1.590412