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March 1998

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Investigation of particle formation during the plasma enhanced chemical vapor deposition of amorphous silicon, oxide, and nitride films

N. P. Rao; Z. Wu; S. Nijhawan; P. Ziemann; S. Campbell; D. B. Kittelson; P. McMurry

J. Vac. Sci. Technol. B 16, 483–489 (1998) https://doi.org/10.1116/1.589851

Abstract

View articletitled, Investigation of particle formation during the plasma enhanced chemical vapor deposition of amorphous silicon, oxide, and nitride films

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Effects of gas distribution on polysilicon etch rate uniformity for a low pressure, high density plasma

Marwan H. Khater; Lawrence J. Overzet; Blake E. Cherrington

J. Vac. Sci. Technol. B 16, 490–495 (1998) https://doi.org/10.1116/1.589852

Abstract

View articletitled, Effects of gas distribution on polysilicon etch rate uniformity for a low pressure, high density plasma

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Oxide loss at the gate periphery during high density plasma etching

R. Kraft; I. Gupta; T. Kinoshita

J. Vac. Sci. Technol. B 16, 496–499 (1998) https://doi.org/10.1116/1.589850

Abstract

View articletitled, Oxide loss at the gate periphery during high density plasma etching

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Selective ${SiO}_{2} {/Si}_{3} N_{4}$ etching in magnetized inductively coupled $C_{4} F_{8}$ plasma

Ho-Jun Lee; Joong Kyun Kim; Jung Hun Kim; Ki-Woong Whang; Jeong Ho Kim; Jung Hoon Joo

J. Vac. Sci. Technol. B 16, 500–506 (1998) https://doi.org/10.1116/1.589853

Abstract

View articletitled, Selective <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">/Si</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>4</mn></mrow></msub></math> etching in magnetized inductively coupled <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mn>8</mn></mrow></msub></math> plasma

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${Si}_{3} N_{4}$ on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

D. M. Diatezua; Z. Wang; D. Park; Z. Chen; A. Rockett; H. Morkoc

J. Vac. Sci. Technol. B 16, 507–510 (1998) https://doi.org/10.1116/1.590300

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure

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High-density inductively coupled plasma etching of GaAs/AlGaAs in ${BCl}_{3} / {Cl}_{2} / Ar :$ A study using a mixture design experiment

Sambhu Agarwala; Scott C. Horst; Oliver King; Rick Wilson; Dennis Stone; Mario Dagenais; Y. J. Chen

J. Vac. Sci. Technol. B 16, 511–514 (1998) https://doi.org/10.1116/1.590216

Abstract

View articletitled, High-density inductively coupled plasma etching of GaAs/AlGaAs in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BCl</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Cl</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Ar</mi><mi xmlns="">:</mi></math> A study using a mixture design experiment

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Dry etching of InP using a ${CH}_{3} {Cl/Ar/H}_{2}$ gas mixture with electron-cyclotron-resonance excitation

Hiroshi Nozawa; Tomohiro Shibata; Toshiaki Tamamura

J. Vac. Sci. Technol. B 16, 515–518 (1998) https://doi.org/10.1116/1.589854

Abstract

View articletitled, Dry etching of InP using a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cl/Ar/H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> gas mixture with electron-cyclotron-resonance excitation

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Visualization of plasma uniformity in dry etching using the imaging plate

Kiyoshi Arita; Masahiro Etoh; Tanemasa Asano

J. Vac. Sci. Technol. B 16, 519–522 (1998) https://doi.org/10.1116/1.589855

Abstract

View articletitled, Visualization of plasma uniformity in dry etching using the imaging plate

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Radial uniformity of an external-coil ionized physical vapor deposition source

M. Dickson; G. Zhong; J. Hopwood

J. Vac. Sci. Technol. B 16, 523–531 (1998) https://doi.org/10.1116/1.589856

Abstract

View articletitled, Radial uniformity of an external-coil ionized physical vapor deposition source

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Antenna sputtering in an internal inductively coupled plasma for ionized physical vapor deposition

J. E. Foster; W. Wang; A. E. Wendt; J. Booske

J. Vac. Sci. Technol. B 16, 532–535 (1998) https://doi.org/10.1116/1.589857

Abstract

View articletitled, Antenna sputtering in an internal inductively coupled plasma for ionized physical vapor deposition

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Etching of 3C-SiC using CHF₃/O₂ and CHF₃/O₂/He plasmas at 1.75 Torr

Aaron J. Fleischman; Christian A. Zorman; Mehran Mehregany

J. Vac. Sci. Technol. B 16, 536–539 (1998) https://doi.org/10.1116/1.589858

Abstract

View articletitled, Etching of 3C-SiC using CHF3/O2 and CHF3/O2/He plasmas at 1.75 Torr

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Maskless sub- $μ$ m patterning of silicon carbide using a focused ion beam in combination with wet chemical etching

R. Menzel; T. Bachmann; W. Wesch; H. Hobert

J. Vac. Sci. Technol. B 16, 540–543 (1998) https://doi.org/10.1116/1.589859

Abstract

View articletitled, Maskless sub-<math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">μ</mi></math>m patterning of silicon carbide using a focused ion beam in combination with wet chemical etching

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Lithography with a mask of block copolymer microstructures

Christopher Harrison; Miri Park; Paul M. Chaikin; Richard A. Register; Douglas H. Adamson

J. Vac. Sci. Technol. B 16, 544–552 (1998) https://doi.org/10.1116/1.589860

Abstract

View articletitled, Lithography with a mask of block copolymer microstructures

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Study of the influence of gas chemistry on notching in metal etching

Suguru Tabara; Yoshihiko Kitayama; Tadao Hatakeyama; Ken Katsuragi; Masafumi Tanabe

J. Vac. Sci. Technol. B 16, 553–557 (1998) https://doi.org/10.1116/1.589861

Abstract

View articletitled, Study of the influence of gas chemistry on notching in metal etching

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Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/ $H_{2} O_{2}$ and de-ionized $H_{2} O$ /buffered oxide etch

Jong-Hee Kim; Dae Ho Lim; Gye Mo Yang

J. Vac. Sci. Technol. B 16, 558–560 (1998) https://doi.org/10.1116/1.589862

Abstract

View articletitled, Selective etching of AlGaAs/GaAs structures using the solutions of citric acid/<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> and de-ionized <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math>/buffered oxide etch

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Bromine/methanol wet chemical etching of via holes for InP microwave devices

S. Trassaert; B. Boudart; S. Piotrowicz; Y. Crosnier

J. Vac. Sci. Technol. B 16, 561–564 (1998) https://doi.org/10.1116/1.589863

Abstract

View articletitled, Bromine/methanol wet chemical etching of via holes for InP microwave devices

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Features of InGaAlAs/InP heterostructures

A. Ramam; S. J. Chua

J. Vac. Sci. Technol. B 16, 565–569 (1998) https://doi.org/10.1116/1.589864

Abstract

View articletitled, Features of InGaAlAs/InP heterostructures

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Investigation of GaAs/AlGaAs multiple quantum well waveguides involving unconfined energy states

Y. H. Chen; C. H. Chan; G. J. Jan

J. Vac. Sci. Technol. B 16, 570–574 (1998) https://doi.org/10.1116/1.589865

Abstract

View articletitled, Investigation of GaAs/AlGaAs multiple quantum well waveguides involving unconfined energy states

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Photoluminescence study on twenty ${GaAs/Al}_{0.3} {Ga}_{0.7} As$ tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy

N. Tomita; K. Takekawa; K. Ohta; S. Shimomura; S. Hiyamizu; K. Fujita; N. Egami; Y. Okamoto

J. Vac. Sci. Technol. B 16, 575–577 (1998) https://doi.org/10.1116/1.589866

Abstract

View articletitled, Photoluminescence study on twenty <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs/Al</mi><mrow><mtext>0.3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.7</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy

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Temperature independent lifetime in InAlAs quantum dots

J. Arlett; F. Yang; K. Hinzer; S. Fafard; Y. Feng; S. Charbonneau; R. Leon

J. Vac. Sci. Technol. B 16, 578–581 (1998) https://doi.org/10.1116/1.589932

Abstract

View articletitled, Temperature independent lifetime in InAlAs quantum dots

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Fabrication and photoluminescence investigation of silicon nanowires on silicon-on-insulator material

M. Gotza; M. Dutoit; M. Ilegems

J. Vac. Sci. Technol. B 16, 582–588 (1998) https://doi.org/10.1116/1.589867

Abstract

View articletitled, Fabrication and photoluminescence investigation of silicon nanowires on silicon-on-insulator material

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Electrical properties of ion beam sputtered and ion assisted ${SiO}_{2},$ ${SiO}_{X} N_{Y},$ and ${SiN}_{X}$ films on silicon

M. F. Lambrinos; R. Valizadeh; J. S. Colligon

J. Vac. Sci. Technol. B 16, 589–598 (1998) https://doi.org/10.1116/1.589868

Abstract

View articletitled, Electrical properties of ion beam sputtered and ion assisted <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi xmlns="">,</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi>X</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi>Y</mi></mrow></msub><mi xmlns="">,</mi></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiN</mi><mrow><mi>X</mi></mrow></msub></math> films on silicon

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Epitaxy of ${Si/Si}_{1−x} {Ge}_{x}$ heterostructures with very small roughness using a production-compatible ultrahigh vacuum-chemical vapor deposition reactor

H. Lafontaine; B. F. Mason; S. J. Rolfe; D. D. Perovic; B. Bahierathan

J. Vac. Sci. Technol. B 16, 599–604 (1998) https://doi.org/10.1116/1.589869

Abstract

View articletitled, Epitaxy of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> heterostructures with very small roughness using a production-compatible ultrahigh vacuum-chemical vapor deposition reactor

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Fourier transform infrared spectroscopy of corona-processed silicon dioxide films

D. Landheer; S. M. Sayedi; L. M. Landsberger; M. Kahrizi

J. Vac. Sci. Technol. B 16, 605–608 (1998) https://doi.org/10.1116/1.589870

Abstract

View articletitled, Fourier transform infrared spectroscopy of corona-processed silicon dioxide films

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Optical reflectance thermometry for rapid thermal processing

Daniel Guidotti

J. Vac. Sci. Technol. B 16, 609–612 (1998) https://doi.org/10.1116/1.589871

Abstract

View articletitled, Optical reflectance thermometry for rapid thermal processing

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Comparative study of back surface field contact formation using different lamp configurations in rapid thermal processing

R. Singh; V. Vedagarbha; S. V. Nimmagadda; S. Narayanan

J. Vac. Sci. Technol. B 16, 613–618 (1998) https://doi.org/10.1116/1.589872

Abstract

View articletitled, Comparative study of back surface field contact formation using different lamp configurations in rapid thermal processing

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Roughness of thermal oxide layers grown on ion implanted silicon wafers

Fabio Iacona; Vito Raineri; Francesco La Via; Emanuele Rimini

J. Vac. Sci. Technol. B 16, 619–627 (1998) https://doi.org/10.1116/1.590298

Abstract

View articletitled, Roughness of thermal oxide layers grown on ion implanted silicon wafers

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Hot-carrier effects on the scattering parameters of lightly doped drain $n$ -type metal–oxide–semiconductor field effect transistors

W. S. Kwan; M. J. Deen

J. Vac. Sci. Technol. B 16, 628–632 (1998) https://doi.org/10.1116/1.589873

Abstract

View articletitled, Hot-carrier effects on the scattering parameters of lightly doped drain <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type metal–oxide–semiconductor field effect transistors

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Influence of data analysis and other factors on the short-term stability of vertical scanning-probe microscope calibration measurements

Hal Edwards; Jan Friis Jo/rgensen; John Dagata; Yale Strausser; Jason Schneir

J. Vac. Sci. Technol. B 16, 633–644 (1998) https://doi.org/10.1116/1.589933

Abstract

View articletitled, Influence of data analysis and other factors on the short-term stability of vertical scanning-probe microscope calibration measurements

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Scanning tunneling microscopy study of reconstruction of 0.8 monolayers Ga on an Si (001) surface

Yoshinobu Nakada; Hajime Okumura

J. Vac. Sci. Technol. B 16, 645–650 (1998) https://doi.org/10.1116/1.589874

Abstract

View articletitled, Scanning tunneling microscopy study of reconstruction of 0.8 monolayers Ga on an Si (001) surface

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Gated Si field emitter array prepared by using anodization

Katsuya Higa; Kiyoaki Nishii; Tanemasa Asano

J. Vac. Sci. Technol. B 16, 651–653 (1998) https://doi.org/10.1116/1.589875

Abstract

View articletitled, Gated Si field emitter array prepared by using anodization

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Experimental and theoretical characterization of integrated field emission nanotips

N. García; M. I. Marqués; A. Asenjo; A. Correia

J. Vac. Sci. Technol. B 16, 654–664 (1998) https://doi.org/10.1116/1.589876

Abstract

View articletitled, Experimental and theoretical characterization of integrated field emission nanotips

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Fabrication of a silicon-vacuum field-emission microdiode with a moving anode

P. Bruschi; A. Diligenti; F. Iani; A. Nannini; M. Piotto

J. Vac. Sci. Technol. B 16, 665–669 (1998) https://doi.org/10.1116/1.589877

Abstract

View articletitled, Fabrication of a silicon-vacuum field-emission microdiode with a moving anode

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Enhanced degradation of gate oxide in negative-gas plasma during reactive ion etching

Kiyoshi Arita; Hirotaka Takihara; Tanemasa Asano

J. Vac. Sci. Technol. B 16, 670–673 (1998) https://doi.org/10.1116/1.589878

Abstract

View articletitled, Enhanced degradation of gate oxide in negative-gas plasma during reactive ion etching

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Preparation of ultrasharp diamond tip emitters by ion-beam etching

A. N. Stepanova; E. I. Givargizov; L. V. Bormatova; V. V. Zhirnov; E. S. Mashkova; A. V. Molchanov

J. Vac. Sci. Technol. B 16, 678–680 (1998) https://doi.org/10.1116/1.589879

Abstract

View articletitled, Preparation of ultrasharp diamond tip emitters by ion-beam etching

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Fabrication of thin-film cold cathodes by a modified chemical vapor deposition diamond process

B. L. Weiss; A. Badzian; L. Pilione; T. Badzian; W. Drawl

J. Vac. Sci. Technol. B 16, 681–683 (1998) https://doi.org/10.1116/1.589880

Abstract

View articletitled, Fabrication of thin-film cold cathodes by a modified chemical vapor deposition diamond process

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Effect of ${sp}^{2}$ content and tip treatment on the field emission of micropatterned pyramidal diamond tips

W. P. Kang; A. Wisitsora-at; J. L. Davidson; D. V. Kerns; Q. Li; J. F. Xu; C. K. Kim

J. Vac. Sci. Technol. B 16, 684–688 (1998) https://doi.org/10.1116/1.589881

Abstract

View articletitled, Effect of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>sp</mi><mrow><mn>2</mn></mrow></msup></math> content and tip treatment on the field emission of micropatterned pyramidal diamond tips

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Field emission energy distribution analysis of wide-band-gap field emitters

R. Schlesser; B. L. McCarson; M. T. McClure; Z. Sitar

J. Vac. Sci. Technol. B 16, 689–692 (1998) https://doi.org/10.1116/1.589882

Abstract

View articletitled, Field emission energy distribution analysis of wide-band-gap field emitters

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Modifying chemical vapor deposited diamond films for field emission displays

T. Habermann; A. Göhl; D. Nau; M. Wedel; G. Müller; M. Christ; M. Schreck; B. Stritzker

J. Vac. Sci. Technol. B 16, 693–696 (1998) https://doi.org/10.1116/1.589883

Abstract

View articletitled, Modifying chemical vapor deposited diamond films for field emission displays

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Study of field electron emission phenomenon associated with N-doped amorphous diamond thin films

J. Chen; A. X. Wei; S. Z. Deng; Y. Lu; X. G. Zheng; D. H. Chen; D. Mo; S. Q. Peng; N. S. Xu

J. Vac. Sci. Technol. B 16, 697–699 (1998) https://doi.org/10.1116/1.589884

Abstract

View articletitled, Study of field electron emission phenomenon associated with N-doped amorphous diamond thin films

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Fabrication and simulation of a gated thin film emitter

Tae-Young Ko; Bokeon Chung; J. Y. Lee; D. Jeon

J. Vac. Sci. Technol. B 16, 700–704 (1998) https://doi.org/10.1116/1.589885

Abstract

View articletitled, Fabrication and simulation of a gated thin film emitter

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Effect of N doping on the electron emission properties of diamondlike carbon film on a 2-in. Mo field emitter array panel

Jae Hoon Jung; Byeong Kwon Ju; Hoon Kim; Myung Hwan Oh; Suk Jae Chung; Jin Jang

J. Vac. Sci. Technol. B 16, 705–709 (1998) https://doi.org/10.1116/1.589886

Abstract

View articletitled, Effect of N doping on the electron emission properties of diamondlike carbon film on a 2-in. Mo field emitter array panel

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Influence of silicon tip arrays on effective work function of diamond

G. Yuan; C. C. Jin; B. L. Zhang; H. Jiang; T. M. Zhou; Y. Q. Ning; Y. Z. Wang; W. B. Wang; Y. X. Jin; H. Ji; C. Z. Gu

J. Vac. Sci. Technol. B 16, 710–711 (1998) https://doi.org/10.1116/1.589887

Abstract

View articletitled, Influence of silicon tip arrays on effective work function of diamond

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Field emission properties of the polycrystalline diamond film prepared by microwave-assisted plasma chemical vapor deposition

Sang Jik Kwon; Young Hwa Shin; Dean M. Aslam; Jong Duk Lee

J. Vac. Sci. Technol. B 16, 712–715 (1998) https://doi.org/10.1116/1.589888

Abstract

View articletitled, Field emission properties of the polycrystalline diamond film prepared by microwave-assisted plasma chemical vapor deposition

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Electron energy distribution of diamond-coated field emitters

W. B. Choi; R. Schlesser; G. Wojak; J. J. Cuomo; Z. Sitar; J. J. Hren

J. Vac. Sci. Technol. B 16, 716–719 (1998) https://doi.org/10.1116/1.589889

Abstract

View articletitled, Electron energy distribution of diamond-coated field emitters

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Electron emission characteristics of polycrystalline diamond films

Takashi Sugino; Seiji Kawasaki; Yuuko Yokota; Yukio Iwasaki; Junji Shirafuji

J. Vac. Sci. Technol. B 16, 720–723 (1998) https://doi.org/10.1116/1.589890

Abstract

View articletitled, Electron emission characteristics of polycrystalline diamond films

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Field emission characteristics of defective diamond films

Kyung Ho Park; Soonil Lee; Kug-Hyun Song; Jung Il Park; Kwang Ja Park; Seok-Yoon Han; Seong Jun Na; Nam-Yang Lee; Ken Ha Koh

J. Vac. Sci. Technol. B 16, 724–728 (1998) https://doi.org/10.1116/1.589891

Abstract

View articletitled, Field emission characteristics of defective diamond films

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Field electron emission of diamondlike carbon films deposited by a laser ablation method

Young Kyu Hong; Ju-Jin Kim; Chan Park; Jin Seung Kim; Jae Ki Kim

J. Vac. Sci. Technol. B 16, 729–731 (1998) https://doi.org/10.1116/1.589892

Abstract

View articletitled, Field electron emission of diamondlike carbon films deposited by a laser ablation method

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Micropattern-gated diamond field emitter array

W. P. Kang; A. Wisitsora-at; J. L. Davidson; M. Howell; D. V. Kerns; Q. Li; J. F. Xu; C. K. Kim

J. Vac. Sci. Technol. B 16, 732–735 (1998) https://doi.org/10.1116/1.589893

Abstract

View articletitled, Micropattern-gated diamond field emitter array

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Parameters for improving reliability of full color field emission display devices

J. M. Kim; J. P. Hong; J. H. Choi; Y. S. Ryu; S. S. Hong

J. Vac. Sci. Technol. B 16, 736–740 (1998) https://doi.org/10.1116/1.589894

Abstract

View articletitled, Parameters for improving reliability of full color field emission display devices

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Vacuum analysis inside a field emission display panel: Experimental and Monte Carlo simulation results

A. Zoulkarneev; N. S. Park; J. E. Jung; J. W. Kim; J. P. Hong; J. M. Kim

J. Vac. Sci. Technol. B 16, 741–744 (1998) https://doi.org/10.1116/1.589895

Abstract

View articletitled, Vacuum analysis inside a field emission display panel: Experimental and Monte Carlo simulation results

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High field breakdown characteristics of micrometric gaps in vacuum

Xianyun Ma; T. S. Sudarshan

J. Vac. Sci. Technol. B 16, 745–748 (1998) https://doi.org/10.1116/1.589896

Abstract

View articletitled, High field breakdown characteristics of micrometric gaps in vacuum

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Field emitter array development for high frequency applications

K. L. Jensen; R. H. Abrams; R. K. Parker

J. Vac. Sci. Technol. B 16, 749–753 (1998) https://doi.org/10.1116/1.590217

Abstract

View articletitled, Field emitter array development for high frequency applications

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Propagation characteristics of a premodulated electron beam

Jeong-Gu Jin; Gun-Sik Park

J. Vac. Sci. Technol. B 16, 754–757 (1998) https://doi.org/10.1116/1.589897

Abstract

View articletitled, Propagation characteristics of a premodulated electron beam

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Field emitter array development for microwave applications. II

C. A. Spindt; C. E. Holland; P. R. Schwoebel; I. Brodie

J. Vac. Sci. Technol. B 16, 758–761 (1998) https://doi.org/10.1116/1.589898

Abstract

View articletitled, Field emitter array development for microwave applications. II

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Nanometer-scale gap control for low voltage and high current operation of field emission array

Hyung-Il Lee; Soon-Soo Park; Dong-Il Park; Sung-Ho Hahm; Jong-Hyun Lee; Jung-Hee Lee

J. Vac. Sci. Technol. B 16, 762–764 (1998) https://doi.org/10.1116/1.589899

Abstract

View articletitled, Nanometer-scale gap control for low voltage and high current operation of field emission array

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Fabrication of self-aligned silicon field emission devices and effects of surface passivation on emission current

M. R. Rakhshandehroo; S. W. Pang

J. Vac. Sci. Technol. B 16, 765–769 (1998) https://doi.org/10.1116/1.589900

Abstract

View articletitled, Fabrication of self-aligned silicon field emission devices and effects of surface passivation on emission current

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Self-aligned Si gate field emitter arrays using the transfer mold technique

Tadashi Sakai; Tomio Ono; Masayuki Nakamoto; Naoshi Sakuma

J. Vac. Sci. Technol. B 16, 770–772 (1998) https://doi.org/10.1116/1.589901

Abstract

View articletitled, Self-aligned Si gate field emitter arrays using the transfer mold technique

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Polycrystalline silicon field emitter arrays by silicidation-sharpening technique at low temperature

Jin Ho Lee; Yoon-Ho Song; Seung-Youl Kang; Kyoung Ik Cho; Sang Yun Lee; Hyung Joun Yoo

J. Vac. Sci. Technol. B 16, 773–776 (1998) https://doi.org/10.1116/1.589902

Abstract

View articletitled, Polycrystalline silicon field emitter arrays by silicidation-sharpening technique at low temperature

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Fabrication and characterization of gated porous silicon cathode field emission arrays

J. R. Jessing; H. R. Kim; D. L. Parker; M. H. Weichold

J. Vac. Sci. Technol. B 16, 777–779 (1998) https://doi.org/10.1116/1.589903

Abstract

View articletitled, Fabrication and characterization of gated porous silicon cathode field emission arrays

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Effect of laser irradiation on electron emission from Si field emitter arrays

M. Takai; N. Suzuki; H. Morimoto; A. Hosono; S. Kawabuchi

J. Vac. Sci. Technol. B 16, 780–782 (1998) https://doi.org/10.1116/1.589904

Abstract

View articletitled, Effect of laser irradiation on electron emission from Si field emitter arrays

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Effects of thermal annealing on emission characteristics and emitter surface properties of a Spindt-type field emission cathode

Fuminori Ito; Kazuo Konuma; Akihiko Okamoto; Akihiro Yano

J. Vac. Sci. Technol. B 16, 783–786 (1998) https://doi.org/10.1116/1.590218

Abstract

View articletitled, Effects of thermal annealing on emission characteristics and emitter surface properties of a Spindt-type field emission cathode

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Fabrication and emission characteristics of GaAs tip and wedge-shaped field emitter arrays by wet etching

F. Ducroquet; P. Kropfeld; O. Yaradou; A. Vanoverschelde

J. Vac. Sci. Technol. B 16, 787–789 (1998) https://doi.org/10.1116/1.589905

Abstract

View articletitled, Fabrication and emission characteristics of GaAs tip and wedge-shaped field emitter arrays by wet etching

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Electron emission from gated silicide field emitter arrays

M. Takai; T. Iriguchi; H. Morimoto; A. Hosono; S. Kawabuchi

J. Vac. Sci. Technol. B 16, 790–792 (1998) https://doi.org/10.1116/1.589906

Abstract

View articletitled, Electron emission from gated silicide field emitter arrays

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Efficient surface-emitting cold cathodes based on electroluminescent porous silicon diodes

Xia Sheng; Hideki Koyama; Nobuyoshi Koshida

J. Vac. Sci. Technol. B 16, 793–795 (1998) https://doi.org/10.1116/1.589907

Abstract

View articletitled, Efficient surface-emitting cold cathodes based on electroluminescent porous silicon diodes

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Microfabrication and characterization of gridded polycrystalline silicon field emitter devices

S. E. Huq; M. Huang; P. R. Wilshaw; P. D. Prewett

J. Vac. Sci. Technol. B 16, 796–798 (1998) https://doi.org/10.1116/1.590219

Abstract

View articletitled, Microfabrication and characterization of gridded polycrystalline silicon field emitter devices

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Effect of gas ambient on improvement in emission behavior of Si field emitter arrays

Mikio Takai; Hiroji Morimoto; Akihiko Hosono; Shinji Kawabuchi

J. Vac. Sci. Technol. B 16, 799–802 (1998) https://doi.org/10.1116/1.589908

Abstract

View articletitled, Effect of gas ambient on improvement in emission behavior of Si field emitter arrays

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Resonant Fowler–Nordheim tunneling emission from metal-oxide-semiconductor cathodes

H. Mimura; Y. Abe; J. Ikeda; K. Tahara; Y. Neo; H. Shimawaki; K. Yokoo

J. Vac. Sci. Technol. B 16, 803–806 (1998) https://doi.org/10.1116/1.589909

Abstract

View articletitled, Resonant Fowler–Nordheim tunneling emission from metal-oxide-semiconductor cathodes

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Fabrication of metal field emitter arrays for low voltage and high current operation

Chang Woo Oh; Chun Gyoo Lee; Byung Gook Park; Jong Duk Lee; Jong Ho Lee

J. Vac. Sci. Technol. B 16, 807–810 (1998) https://doi.org/10.1116/1.589910

Abstract

View articletitled, Fabrication of metal field emitter arrays for low voltage and high current operation

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Fabrication and characterization of silicon field emitter arrays with focusing electrode by the chemical mechanical polishing process

Jin Ho Lee; Yoon-Ho Song; Seung-Youl Kang; Sang Gi Kim; Kyoung Ik Cho; Hyung Joun Yoo

J. Vac. Sci. Technol. B 16, 811–814 (1998) https://doi.org/10.1116/1.589911

Abstract

View articletitled, Fabrication and characterization of silicon field emitter arrays with focusing electrode by the chemical mechanical polishing process

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Analysis of electron emission degradation in silicon field emitter arrays

Yoon-Ho Song; Jin Ho Lee; Seung-Youl Kang; Yong-Il Lee; Kyoung Ik Cho; Hyung Joun Yoo

J. Vac. Sci. Technol. B 16, 815–817 (1998) https://doi.org/10.1116/1.589912

Abstract

View articletitled, Analysis of electron emission degradation in silicon field emitter arrays

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Tunneling emission from valence band of Si-metal–oxide–semiconductor electron tunneling cathode

Junji Ikeda; Atsushi Yamada; Kazuya Okamoto; Yoshiaki Abe; Kaoru Tahara; Hidenori Mimura; Kuniyoshi Yokoo

J. Vac. Sci. Technol. B 16, 818–821 (1998) https://doi.org/10.1116/1.589913

Abstract

View articletitled, Tunneling emission from valence band of Si-metal–oxide–semiconductor electron tunneling cathode

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GaN field emitter array diode with integrated anode

Robert D. Underwood; S. Keller; U. K. Mishra; D. Kapolnek; B. P. Keller; S. P. DenBaars

J. Vac. Sci. Technol. B 16, 822–825 (1998) https://doi.org/10.1116/1.589914

Abstract

View articletitled, GaN field emitter array diode with integrated anode

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Characterization of two by two electron-beam microcolumn array aligned with field emission array

Jeong-Young Park; Jared D. Lera; H. J. Choi; G. H. Buh; C. J. Kang; J. H. Jung; S. S. Choi; D. Jeon; Young Kuk

J. Vac. Sci. Technol. B 16, 826–828 (1998) https://doi.org/10.1116/1.589915

Abstract

View articletitled, Characterization of two by two electron-beam microcolumn array aligned with field emission array

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Emission characteristics of ZrN thin film field emitter array fabricated by ion beam assisted deposition technique

M. Nagao; Y. Fujimori; Y. Gotoh; H. Tsuji; J. Ishikawa

J. Vac. Sci. Technol. B 16, 829–832 (1998) https://doi.org/10.1116/1.589916

Abstract

View articletitled, Emission characteristics of ZrN thin film field emitter array fabricated by ion beam assisted deposition technique

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Fabrication of GaN field emitter arrays by selective area growth technique

T. Kozawa; M. Suzuki; Y. Taga; Y. Gotoh; J. Ishikawa

J. Vac. Sci. Technol. B 16, 833–835 (1998) https://doi.org/10.1116/1.590220

Abstract

View articletitled, Fabrication of GaN field emitter arrays by selective area growth technique

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Atomic investigation of individual apexes of diamond emitters by a scanning atom probe

Osamu Nishikawa; Takahiro Sekine; Yoshikatsu Ohtani; Kiyoshi Maeda; Yoshihiro Numada; Masafumi Watanabe

J. Vac. Sci. Technol. B 16, 836–840 (1998) https://doi.org/10.1116/1.589917

Abstract

View articletitled, Atomic investigation of individual apexes of diamond emitters by a scanning atom probe

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Emission observation of a microtip cathode array with an electrostatic-lens projector: Statistical approach

C. Constancias; R. Baptist

J. Vac. Sci. Technol. B 16, 841–850 (1998) https://doi.org/10.1116/1.590221

Abstract

View articletitled, Emission observation of a microtip cathode array with an electrostatic-lens projector: Statistical approach

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Metal–insulator–semiconductor emitter with an epitaxial ${CaF}_{2}$ layer as the insulator

Y. Miyamoto; A. Yamaguchi; K. Oshima; W. Saitoh; M. Asada

J. Vac. Sci. Technol. B 16, 851–854 (1998) https://doi.org/10.1116/1.589918

Abstract

View articletitled, Metal–insulator–semiconductor emitter with an epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CaF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> layer as the insulator

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Investigation of Ce-doped silicates for low voltage field emission displays

R. Y. Lee; F. L. Zhang; J. Penczek; B. K. Wagner; P. N. Yocom; C. J. Summers

J. Vac. Sci. Technol. B 16, 855–857 (1998) https://doi.org/10.1116/1.589919

Abstract

View articletitled, Investigation of Ce-doped silicates for low voltage field emission displays

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Compositional dependence of luminescence of lithium zinc gallate phosphor

Kyung-Soo Suh; Soon-Ju Jang; Kyoung-Ik Cho; Sahn Nahm; Jae-Dong Byun

J. Vac. Sci. Technol. B 16, 858–861 (1998) https://doi.org/10.1116/1.589920

Abstract

View articletitled, Compositional dependence of luminescence of lithium zinc gallate phosphor

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Nanostructured integrated electron source

C. Schoessler; H. W. P. Koops

J. Vac. Sci. Technol. B 16, 862–865 (1998) https://doi.org/10.1116/1.589921

Abstract

View articletitled, Nanostructured integrated electron source

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Surface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission performance

Hyung Soo Uh; Byung Gook Park; Jong Duk Lee

J. Vac. Sci. Technol. B 16, 866–870 (1998) https://doi.org/10.1116/1.589922

Abstract

View articletitled, Surface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission performance

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Emission characteristics of TiN-coated silicon field emitter arrays

Seung-Youl Kang; Jin Ho Lee; Yoon-Ho Song; Yuon Tae Kim; Kyoung Ik Cho; Hyung Joun Yoo

J. Vac. Sci. Technol. B 16, 871–874 (1998) https://doi.org/10.1116/1.590222

Abstract

View articletitled, Emission characteristics of TiN-coated silicon field emitter arrays

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Reduction of work function on a W(100) field emitter due to co-adsorption of Si and Ti

Hiroshi Adachi; Kazuto Ashihara; Yasushi Saito; Hideaki Nakane

J. Vac. Sci. Technol. B 16, 875–879 (1998) https://doi.org/10.1116/1.589923

Abstract

View articletitled, Reduction of work function on a W(100) field emitter due to co-adsorption of Si and Ti

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Arcing and voltage breakdown in vacuum microelectronics microwave devices using field emitter arrays: Causes, possible solutions, and recent progress

Francis Charbonnier

J. Vac. Sci. Technol. B 16, 880–887 (1998) https://doi.org/10.1116/1.589924

Abstract

View articletitled, Arcing and voltage breakdown in vacuum microelectronics microwave devices using field emitter arrays: Causes, possible solutions, and recent progress

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Transient and stationary field emission currents from semiconductors computed by a simple semi-classical method

V. Filip; D. Nicolaescu; C. N. Plavitu; F. Okuyama

J. Vac. Sci. Technol. B 16, 888–894 (1998) https://doi.org/10.1116/1.589925

Abstract

View articletitled, Transient and stationary field emission currents from semiconductors computed by a simple semi-classical method

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Emission stability analysis of cone-shaped metal-insulator-semiconductor cathode by Monte Carlo simulation

J. Ishikawa; Y. Gotoh; S. Sadakane; K. Inoue; M. Nagao; H. Tsuji

J. Vac. Sci. Technol. B 16, 895–899 (1998) https://doi.org/10.1116/1.589926

Abstract

View articletitled, Emission stability analysis of cone-shaped metal-insulator-semiconductor cathode by Monte Carlo simulation

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Model calculations of internal field emission and $J–V$ characteristics of a composite $n$ -Si and N–diamond cold cathode source

Peter Lerner; N. M. Miskovsky; P. H. Cutler

J. Vac. Sci. Technol. B 16, 900–905 (1998) https://doi.org/10.1116/1.589927

Abstract

View articletitled, Model calculations of internal field emission and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">J–V</mi></math> characteristics of a composite <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-Si and N–diamond cold cathode source

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Calculation of bulk states contributions to field emission from GaN

M. S. Chung; B.-G. Yoon; J. M. Park; P. H. Cutler; N. M. Miskovsky

J. Vac. Sci. Technol. B 16, 906–909 (1998) https://doi.org/10.1116/1.589928

Abstract

View articletitled, Calculation of bulk states contributions to field emission from GaN

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Deviations from the Fowler–Nordheim theory and peculiarities of field electron emission from small-scale objects

G. N. Fursey; D. V. Glazanov

J. Vac. Sci. Technol. B 16, 910–915 (1998) https://doi.org/10.1116/1.589929

Abstract

View articletitled, Deviations from the Fowler–Nordheim theory and peculiarities of field electron emission from small-scale objects

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Characteristics and circuit model of a field emission triode

Jung Hyun Nam; Hyung Soo Uh; Jong Duk Lee; Jeong Don Ihm; Yeo Hwan Kim; Kyu Man Choi

J. Vac. Sci. Technol. B 16, 916–919 (1998) https://doi.org/10.1116/1.589930

Abstract

View articletitled, Characteristics and circuit model of a field emission triode

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Effective three-dimensional simulation of field emitter array and its optimal design methodology using an evolution strategy

Jaehoon Jung; Byoungho Lee; Jong Duk Lee

J. Vac. Sci. Technol. B 16, 920–922 (1998) https://doi.org/10.1116/1.589931

Abstract

View articletitled, Effective three-dimensional simulation of field emitter array and its optimal design methodology using an evolution strategy

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