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January 1998
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Electroluminescence from ZnSTe:Al alloy and investigation of local current distributions by conducting atomic force microscopy
J. Vac. Sci. Technol. B 16, 14–18 (1998)
https://doi.org/10.1116/1.589771
Microstructure of novel superhard nanocrystalline-amorphous composites as analyzed by high resolution transmission electron microscopy
J. Vac. Sci. Technol. B 16, 19–22 (1998)
https://doi.org/10.1116/1.589778
Nanoscale imaging of the electronic tunneling barrier at a metal surface
J. Vac. Sci. Technol. B 16, 23–29 (1998)
https://doi.org/10.1116/1.589787
Scanning tunneling microscopy atomic resolution images of sulfur overlayers on Fe(111)
J. Vac. Sci. Technol. B 16, 30–37 (1998)
https://doi.org/10.1116/1.589801
Effect of lubricant coating on tips in atomic force microscopy
Shigeru Umemura; Masaru Igarashi; Yasuko Andoh; Reizo Kaneko; Shin-ichi Aizawa; Kazumi Noguchi; Takateru Dekura; Akitoshi Toda
J. Vac. Sci. Technol. B 16, 38–42 (1998)
https://doi.org/10.1116/1.589819
Analysis and optimization of force sensitivity in atomic force microscopy using optical and electrical detection
J. Vac. Sci. Technol. B 16, 43–50 (1998)
https://doi.org/10.1116/1.589827
Removing drift from scanning probe microscope images of periodic samples
J. Vac. Sci. Technol. B 16, 51–53 (1998)
https://doi.org/10.1116/1.589834
Generic scanned-probe microscope sensors by combined micromachining and electron-beam lithography
J. Vac. Sci. Technol. B 16, 54–58 (1998)
https://doi.org/10.1116/1.589835
Generating ∼90 nanometer features using near-field contact-mode photolithography with an elastomeric phase mask
J. Vac. Sci. Technol. B 16, 59–68 (1998)
https://doi.org/10.1116/1.589836
Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations
J. Vac. Sci. Technol. B 16, 69–76 (1998)
https://doi.org/10.1116/1.589837
Electron-beam lithography with metal colloids: Direct writing of metallic nanostructures
J. Vac. Sci. Technol. B 16, 77–79 (1998)
https://doi.org/10.1116/1.589838
Scatterometry measurement of sub-0.1 μm linewidth gratings
J. Vac. Sci. Technol. B 16, 80–87 (1998)
https://doi.org/10.1116/1.589840
Photolithography with transparent reflective photomasks
J. Vac. Sci. Technol. B 16, 98–103 (1998)
https://doi.org/10.1116/1.589842
Electrostatic accel–decel lens with the advantage of reduced chromatic aberration
J. Vac. Sci. Technol. B 16, 104–108 (1998)
https://doi.org/10.1116/1.589762
Selected two-dimensional effects in gas immersion laser doping of unpatterned silicon
J. Vac. Sci. Technol. B 16, 116–120 (1998)
https://doi.org/10.1116/1.589764
Surface characterizations on newly developed copolyester thin films for microelectronics devices
J. Vac. Sci. Technol. B 16, 125–130 (1998)
https://doi.org/10.1116/1.589766
Preliminary empirical results suggesting the mapping of dynamic in situ process signals to real-time wafer attributes in a plasma etch process
J. Vac. Sci. Technol. B 16, 131–136 (1998)
https://doi.org/10.1116/1.589767
Evidence of Ge island formation during thermal annealing of SiGe alloys: Combined atomic force microscopy and Auger electron spectroscopy study
J. Vac. Sci. Technol. B 16, 137–141 (1998)
https://doi.org/10.1116/1.589768
Temperature dependence of conductivity and Hall carrier concentration of polycrystalline SiC deposited on fused silica by laser ablation
J. Vac. Sci. Technol. B 16, 142–146 (1998)
https://doi.org/10.1116/1.589769
X-ray photoelectron spectroscopy analyses of metal stacks etched in high density plasmas
J. Vac. Sci. Technol. B 16, 147–158 (1998)
https://doi.org/10.1116/1.589770
Numerical analysis of the pressure dependence of the etch rate in an Al etching reactor equipped with a helicon source
J. Vac. Sci. Technol. B 16, 159–163 (1998)
https://doi.org/10.1116/1.589772
Surface processes occurring on and in fluorine-based plasmas: Afterglow of a plasma
J. Vac. Sci. Technol. B 16, 164–172 (1998)
https://doi.org/10.1116/1.589773
Electrical optimization of plasma-enhanced chemical vapor deposition chamber cleaning plasmas
J. Vac. Sci. Technol. B 16, 173–182 (1998)
https://doi.org/10.1116/1.589774
Nitridation of GaAs using helicon-wave excited and inductively coupled nitrogen plasma
J. Vac. Sci. Technol. B 16, 183–191 (1998)
https://doi.org/10.1116/1.589775
Synchrotron radiation photoemission spectroscopy studies of the thermal nitridation of GaAs(100) with ammonia
J. Vac. Sci. Technol. B 16, 192–196 (1998)
https://doi.org/10.1116/1.589776
Characterization of III nitride materials and devices by secondary ion mass spectrometry
J. Vac. Sci. Technol. B 16, 197–203 (1998)
https://doi.org/10.1116/1.589777
Temperature effect on surface flatness of molecular beam epitaxy homoepitaxial layers grown on nominal and vicinal GaAs substrates
J. Vac. Sci. Technol. B 16, 204–209 (1998)
https://doi.org/10.1116/1.589780
Selective infill metalorganic molecular beam epitaxy of InP:Si layers for buried collector double heterostructure bipolar transistors
J. Vac. Sci. Technol. B 16, 210–215 (1998)
https://doi.org/10.1116/1.589781
Characterization of an -GaAs layer grown on a GaAs substrate cleaned by an electron cyclotron resonance hydrogen plasma
J. Vac. Sci. Technol. B 16, 216–222 (1998)
https://doi.org/10.1116/1.589782
Nonselective wet chemical etching of GaAs and AlGaInP for device applications
J. Vac. Sci. Technol. B 16, 223–226 (1998)
https://doi.org/10.1116/1.589783
Thermal stability of Pd/Zn and Pt based contacts to with various barrier layers
J. Vac. Sci. Technol. B 16, 227–231 (1998)
https://doi.org/10.1116/1.589784
Specific features of field emission from submicron cathode surface areas at high current densities
J. Vac. Sci. Technol. B 16, 232–237 (1998)
https://doi.org/10.1116/1.589785
Fabrication and characterization of silicon field emitter arrays by spin-on-glass etch-back process
J. Vac. Sci. Technol. B 16, 238–241 (1998)
https://doi.org/10.1116/1.589786
Novel structure of a silicon field emission cathode with a sputtered TiW gate electrode
J. Vac. Sci. Technol. B 16, 242–246 (1998)
https://doi.org/10.1116/1.589788
Existence of optimal nitridation temperature and time for hot-electron hardness enhancement in metal-oxide-Si capacitors
J. Vac. Sci. Technol. B 16, 250–252 (1998)
https://doi.org/10.1116/1.589790
Reactive ion etching of for ternary and ( 0.3, 0.52) compounds using various In contents
J. Vac. Sci. Technol. B 16, 253–254 (1998)
https://doi.org/10.1116/1.589791
Characterization of low-energy (100 eV–10 keV) boron ion implantation
J. Vac. Sci. Technol. B 16, 280–285 (1998)
https://doi.org/10.1116/1.589795
Techniques and applications of secondary ion mass spectrometry and spreading resistance profiling to measure ultrashallow junction implants down to 0.5 keV B and
William L. Harrington; Charles W. Magee; Marek Pawlik; Daniel F. Downey; Carlton M. Osburn; Susan B. Felch
J. Vac. Sci. Technol. B 16, 286–291 (1998)
https://doi.org/10.1116/1.589796
Ultrashallow secondary ion mass spectroscopy depth profiling of doping spikes and Si/SiGe/Si heterostructures using different primary species
J. Vac. Sci. Technol. B 16, 292–297 (1998)
https://doi.org/10.1116/1.589797
Ultralow energy secondary ion mass spectrometry and transient yields at the silicon surface
J. Vac. Sci. Technol. B 16, 302–305 (1998)
https://doi.org/10.1116/1.589799
Metal–oxide–semiconductor field-effect transistor junction requirements
J. Vac. Sci. Technol. B 16, 306–311 (1998)
https://doi.org/10.1116/1.589800
Optical determination of shallow carrier profiles using Fourier transform infrared ellipsometry
J. Vac. Sci. Technol. B 16, 312–315 (1998)
https://doi.org/10.1116/1.589802
High-resolution damage depth profiles of unannealed sub-100 nm implants in (100) silicon
J. Vac. Sci. Technol. B 16, 316–319 (1998)
https://doi.org/10.1116/1.589803
200 eV–10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study
J. Vac. Sci. Technol. B 16, 327–333 (1998)
https://doi.org/10.1116/1.589805
Shallow junctions diffused from single- and coimplanted films and integrated 0.2 μm complementary metal–oxide–semiconductor transistors
J. Vac. Sci. Technol. B 16, 334–338 (1998)
https://doi.org/10.1116/1.589806
Scanning capacitance microscopy measurement of two-dimensional dopant profiles across junctions
J. Vac. Sci. Technol. B 16, 339–343 (1998)
https://doi.org/10.1116/1.589807
Direct comparison of two-dimensional dopant profiles by scanning capacitance microscopy with TSUPREM4 process simulation
J. Vac. Sci. Technol. B 16, 344–348 (1998)
https://doi.org/10.1116/1.589808
Two-dimensional profiling in silicon using conventional and electrochemical selective etching
J. Vac. Sci. Technol. B 16, 349–354 (1998)
https://doi.org/10.1116/1.589809
Cross-sectional nano-spreading resistance profiling
J. Vac. Sci. Technol. B 16, 355–361 (1998)
https://doi.org/10.1116/1.589810
Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update
J. Vac. Sci. Technol. B 16, 362–366 (1998)
https://doi.org/10.1116/1.589811
Nanopotentiometry: Local potential measurements in complementary metal–oxide–semiconductor transistors using atomic force microscopy
J. Vac. Sci. Technol. B 16, 367–372 (1998)
https://doi.org/10.1116/1.589812
Ultrahigh depth resolution secondary ion mass spectrometry with sub-keV grazing beams
J. Vac. Sci. Technol. B 16, 373–376 (1998)
https://doi.org/10.1116/1.589813
Quantification of secondary-ion-mass spectroscopy depth profiles using maximum entropy deconvolution with a sample independent response function
J. Vac. Sci. Technol. B 16, 377–381 (1998)
https://doi.org/10.1116/1.589814
Comparison of secondary ion mass spectrometry profiling of sub-100 nm ultrashallow junctions using and sputtering
J. Vac. Sci. Technol. B 16, 382–385 (1998)
https://doi.org/10.1116/1.589815
Verification of “lateral secondary ion mass spectrometry” as a method for measuring lateral dopant dose distributions in microelectronics test structures
Rolf von Criegern; Franz Jahnel; Rosa Lange-Gieseler; Peter Pearson; Gerhard Hobler; Alexander Simionescu
J. Vac. Sci. Technol. B 16, 386–393 (1998)
https://doi.org/10.1116/1.589816
Epitaxial staircase structure for the calibration of electrical characterization techniques
T. Clarysse; M. Caymax; P. De Wolf; T. Trenkler; W. Vandervorst; J. S. McMurray; J. Kim; C. C. Williams; J. G. Clark; G. Neubauer
J. Vac. Sci. Technol. B 16, 394–400 (1998)
https://doi.org/10.1116/1.589820
Low weight spreading resistance profiling of ultrashallow dopant profiles
J. Vac. Sci. Technol. B 16, 401–405 (1998)
https://doi.org/10.1116/1.589817
Electrical characterization of shallow junctions
J. Vac. Sci. Technol. B 16, 406–410 (1998)
https://doi.org/10.1116/1.589821
Evaluation of diamond-ground beveled surfaces with Hg gate capacitance–voltage and current–voltage
J. Vac. Sci. Technol. B 16, 411–414 (1998)
https://doi.org/10.1116/1.589822
Recoil implantation of boron into silicon for ultrashallow junction formation: Modeling, fabrication, and characterization
J. Vac. Sci. Technol. B 16, 415–419 (1998)
https://doi.org/10.1116/1.589823
Auger voltage contrast imaging for the delineation of two-dimensional junctions in cross-sectioned metal–oxide–semiconductor devices
J. Vac. Sci. Technol. B 16, 420–425 (1998)
https://doi.org/10.1116/1.589824
Diffusion from polymer spin-on films: Measurements and simulations
B. Ya. Ber; E. G. Guk; A. V. Kamanin; Yu. A. Kudryavtsev; L. A. Mokina; N. M. Shmidt; V. B. Shuman; L. A. Busygina; T. A. Yurre
J. Vac. Sci. Technol. B 16, 426–429 (1998)
https://doi.org/10.1116/1.589825
Process effects in shallow junction formation by plasma doping
J. Vac. Sci. Technol. B 16, 435–439 (1998)
https://doi.org/10.1116/1.589826
Physically based modeling of two-dimensional and three-dimensional implantation profiles: Influence of damage accumulation
J. Vac. Sci. Technol. B 16, 440–446 (1998)
https://doi.org/10.1116/1.589828
Consideration of in-line qualification for ultrashallow junction implantation
Wendell Boyd, Jr.; Mark Lee; Dennis Wagner; Terry Romig; Joe Bennett; Lawrence Larson; Walt Johnson; Li Zhou
J. Vac. Sci. Technol. B 16, 447–452 (1998)
https://doi.org/10.1116/1.589818
Two-dimensional -junction delineation and individual dopant identification using scanning tunneling microscopy/spectroscopy
J. Vac. Sci. Technol. B 16, 453–456 (1998)
https://doi.org/10.1116/1.589829
Two-dimensional imaging of charge carrier profiles using local metal–semiconductor capacitance–voltage measurement
J. Vac. Sci. Technol. B 16, 457–462 (1998)
https://doi.org/10.1116/1.589830
Model database for determining dopant profiles from scanning capacitance microscope measurements
J. Vac. Sci. Technol. B 16, 463–470 (1998)
https://doi.org/10.1116/1.589831
Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched junctions in Si
J. Vac. Sci. Technol. B 16, 471–475 (1998)
https://doi.org/10.1116/1.589832
Strong effect of dopant concentration gradient on etching rate
J. Vac. Sci. Technol. B 16, 476–480 (1998)
https://doi.org/10.1116/1.589833
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Machine learning driven measurement of high-aspect-ratio nanostructures using Mueller matrix spectroscopic ellipsometry
Shiva Mudide, Nick Keller, et al.