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November 1997

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Electrostatic tip-surface interaction in scanning force microscopy: A convenient expression useful for arbitrary tip and sample geometries

Fredy R. Zypman; Steven J. Eppell

J. Vac. Sci. Technol. B 15, 1853–1860 (1997) https://doi.org/10.1116/1.589567

Abstract

View articletitled, Electrostatic tip-surface interaction in scanning force microscopy: A convenient expression useful for arbitrary tip and sample geometries

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Local work function for Cu(111)–Au surface studied by scanning tunneling microscopy

J. F. Jia; K. Inoue; Y. Hasegawa; W. S. Yang; T. Sakurai

J. Vac. Sci. Technol. B 15, 1861–1864 (1997) https://doi.org/10.1116/1.589568

Abstract

View articletitled, Local work function for Cu(111)–Au surface studied by scanning tunneling microscopy

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In situ scanning force microscopy study of TiN layers in sulphuric acid

M. Herranen; M. Nordin; J.-O. Carlsson

J. Vac. Sci. Technol. B 15, 1865–1870 (1997) https://doi.org/10.1116/1.589569

Abstract

View articletitled, In situ scanning force microscopy study of TiN layers in sulphuric acid

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Scanning thermal microscope tip-induced chemical reaction on solid organometallic compound thin films

L. Zhou; G. Q. Xu; H. T. Ng; S. F. Y. Li

J. Vac. Sci. Technol. B 15, 1871–1875 (1997) https://doi.org/10.1116/1.589570

Abstract

View articletitled, Scanning thermal microscope tip-induced chemical reaction on solid organometallic compound thin films

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Tunneling spectroscopy on semiconductors with a low surface state density

Ch. Sommerhalter; Th. W. Matthes; J. Boneberg; P. Leiderer; M. Ch. Lux-Steiner

J. Vac. Sci. Technol. B 15, 1876–1883 (1997) https://doi.org/10.1116/1.589571

Abstract

View articletitled, Tunneling spectroscopy on semiconductors with a low surface state density

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Dielectric breakdown of silicon oxide studied by scanning probe microscopy

Takao Yasue; Yoshiko Yoshida; Hiroshi Koyama; Tadao Kato; Tadashi Nishioka

J. Vac. Sci. Technol. B 15, 1884–1888 (1997) https://doi.org/10.1116/1.589572

Abstract

View articletitled, Dielectric breakdown of silicon oxide studied by scanning probe microscopy

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Synthesis, structure, and optical properties of nanometer-sized ${In}_{2} O_{3}$ capped by anionic surfactant

Wu Xiaochun; Wang Rongyao; Zou Bingsuo; Wu Pengfei; Xu jiren; Huang Wei

J. Vac. Sci. Technol. B 15, 1889–1892 (1997) https://doi.org/10.1116/1.589573

Abstract

View articletitled, Synthesis, structure, and optical properties of nanometer-sized <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> capped by anionic surfactant

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Evolution of surface morphology in the initial stage of nitridation of the Si(111)- $7×7$ surface by nitrogen ions

Jeong Sook Ha; Kang-Ho Park; Wan Soo Yun; El-Hang Lee; Seong-Ju Park

J. Vac. Sci. Technol. B 15, 1893–1898 (1997) https://doi.org/10.1116/1.589574

Abstract

View articletitled, Evolution of surface morphology in the initial stage of nitridation of the Si(111)-<math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">7×7</mtext></math> surface by nitrogen ions

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Fourier transform infrared study of porous silicon dipped into ${Cr}^{3+}$ solution

Y. M. Huang; B. G. Zhai

J. Vac. Sci. Technol. B 15, 1899–1901 (1997) https://doi.org/10.1116/1.589575

Abstract

View articletitled, Fourier transform infrared study of porous silicon dipped into <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Cr</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math> solution

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Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor

Poonacha Kongetira; Gerold W. Neudeck; Christos G. Takoudis

J. Vac. Sci. Technol. B 15, 1902–1907 (1997) https://doi.org/10.1116/1.589576

Abstract

View articletitled, Expression for the growth rate of selective epitaxial growth of silicon using dichlorosilane, hydrogen chloride, and hydrogen in a low pressure chemical vapor deposition pancake reactor

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Determination of trace metallic impurities on 200-mm silicon wafers by time-of-flight secondary-ion-mass spectroscopy

Paul K. Chu; Bruno W. Schueler; Fraser Reich; Patricia M. Lindley

J. Vac. Sci. Technol. B 15, 1908–1912 (1997) https://doi.org/10.1116/1.589577

Abstract

View articletitled, Determination of trace metallic impurities on 200-mm silicon wafers by time-of-flight secondary-ion-mass spectroscopy

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Degradation measurements using fully processed test transistors in high density plasma reactors for failure analysis

Ravisangar Muniandy; Ron Boylan; Roland Chin; Nick Bell; Robert Sankman

J. Vac. Sci. Technol. B 15, 1913–1918 (1997) https://doi.org/10.1116/1.589578

Abstract

View articletitled, Degradation measurements using fully processed test transistors in high density plasma reactors for failure analysis

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Low temperature deposition of ${SiN}_{x} : H$ using ${SiH}_{4} {–N}_{2}$ or ${SiH}_{4} {–NH}_{3}$ distributed electron cyclotron resonance microwave plasma

F. Delmotte; M. C. Hugon; B. Agius; J. L. Courant

J. Vac. Sci. Technol. B 15, 1919–1926 (1997) https://doi.org/10.1116/1.589579

Abstract

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Effects of cleaning and postoxidation annealing on thin oxides

G. Franco; C. M. Camalleri; V. Raineri; G. Ghidini; C. Clementi; F. Pellizzer

J. Vac. Sci. Technol. B 15, 1927–1935 (1997) https://doi.org/10.1116/1.589580

Abstract

View articletitled, Effects of cleaning and postoxidation annealing on thin oxides

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Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal–oxide semiconductor technology

A. Chatterjee; I. Ali; K. Joyner; D. Mercer; J. Kuehne; M. Mason; A. Esquivel; D. Rogers; S. O’Brien; P. Mei; S. Murtaza; S. P. Kwok; K. Taylor; S. Nag; G. Hames; M. Hanratty; H. Marchman; S. Ashburn; I.-C. Chen

J. Vac. Sci. Technol. B 15, 1936–1942 (1997) https://doi.org/10.1116/1.589581

Abstract

View articletitled, Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal–oxide semiconductor technology

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Correlated electrical and optical measurements of firing semiconductor bridges

Jongdae Kim; Sang Gi Kim; K. C. Jungling

J. Vac. Sci. Technol. B 15, 1943–1948 (1997) https://doi.org/10.1116/1.589582

Abstract

View articletitled, Correlated electrical and optical measurements of firing semiconductor bridges

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Generation of subquarter-micron resist structures using optical interference lithography and image reversal

J. Y. Decker; A. Fernandez; D. W. Sweeney

J. Vac. Sci. Technol. B 15, 1949–1953 (1997) https://doi.org/10.1116/1.589583

Abstract

View articletitled, Generation of subquarter-micron resist structures using optical interference lithography and image reversal

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Investigation of the proximity effect in amorphous ${AlF}_{3}$ electron-beam resists

G. S. Chen; C. J. Humphreys

J. Vac. Sci. Technol. B 15, 1954–1960 (1997) https://doi.org/10.1116/1.589584

Abstract

View articletitled, Investigation of the proximity effect in amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">AlF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> electron-beam resists

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Air-bridges, air-ramps, planarization, and encapsulation using pyrolytic photoresist in the fabrication of three-dimensional microstructures

G. A. Porkolab; Y. J. Chen; Seyed Ahmad Tabatabaei; Sambhu Agarwala; F. G. Johnson; Oliver King; M. Dagenais; Russell E. Frizzell; W. T. Beard, Jr.; D. R. Stone

J. Vac. Sci. Technol. B 15, 1961–1965 (1997) https://doi.org/10.1116/1.589585

Abstract

View articletitled, Air-bridges, air-ramps, planarization, and encapsulation using pyrolytic photoresist in the fabrication of three-dimensional microstructures

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Polarization-dependent contrast in near-field optical microscopy

Kiyoshi Kobayashi; Osaaki Watanuki

J. Vac. Sci. Technol. B 15, 1966–1970 (1997) https://doi.org/10.1116/1.589586

Abstract

View articletitled, Polarization-dependent contrast in near-field optical microscopy

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Synthesis of electrostatic focusing and deflection systems

M. Szilagyi; H. Cho

J. Vac. Sci. Technol. B 15, 1971–1982 (1997) https://doi.org/10.1116/1.589587

Abstract

View articletitled, Synthesis of electrostatic focusing and deflection systems

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Effect of rapid thermal annealing on the microstructure and electrical characteristics of Au/Ni/Au/Ge/Ni multilayers deposited on $n$ -type InGaAs

J. Morais; T. A. Fazan; R. Landers; R. G. Pereira; E. A. S. Sato; W. Carvalho, Jr.

J. Vac. Sci. Technol. B 15, 1983–1986 (1997) https://doi.org/10.1116/1.589588

Abstract

View articletitled, Effect of rapid thermal annealing on the microstructure and electrical characteristics of Au/Ni/Au/Ge/Ni multilayers deposited on <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type InGaAs

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Bias-temperature stability of the ${Cu(Mg)/SiO}_{2} /p- Si$ metal-oxide-semiconductor capacitors

T. Suwwan de Felipe; S. P. Murarka; S. Bedell; W. A. Lanford

J. Vac. Sci. Technol. B 15, 1987–1989 (1997) https://doi.org/10.1116/1.589589

Abstract

View articletitled, Bias-temperature stability of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu(Mg)/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi xmlns="">/p-</mi><mi mathvariant="normal" xmlns="">Si</mi></math> metal-oxide-semiconductor capacitors

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Characterization of AL–Y alloy thin films deposited by direct current magnetron sputtering

Y. Liu; R. Singh; K. Poole; R. J. Diefendorf; J. Harriss; K. Cannon

J. Vac. Sci. Technol. B 15, 1990–1994 (1997) https://doi.org/10.1116/1.589590

Abstract

View articletitled, Characterization of AL–Y alloy thin films deposited by direct current magnetron sputtering

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Growth and fractal scaling nature of copper thin films on TiN surface by metal organic chemical vapor deposition from hexafluoroacethylacetonate ${Cu}^{(I)}$ vinyltrimethylsilane

Young-Bae Park; Shi-Woo Rhee; Jae-Hwa Hong

J. Vac. Sci. Technol. B 15, 1995–2000 (1997) https://doi.org/10.1116/1.589591

Abstract

View articletitled, Growth and fractal scaling nature of copper thin films on TiN surface by metal organic chemical vapor deposition from hexafluoroacethylacetonate <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">(I)</mi></mrow></msup></math> vinyltrimethylsilane

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Effect of the in situ thermal treatments on Ir/n-type Si (111) Schottky contacts

F. J. Jiménez-Leube; M. Clement; J. Sanz-Maudes; J. M. Blanco; J. J. Serrano

J. Vac. Sci. Technol. B 15, 2001–2010 (1997) https://doi.org/10.1116/1.589592

Abstract

View articletitled, Effect of the in situ thermal treatments on Ir/n-type Si (111) Schottky contacts

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Influence of AlSiTi grain boundaries on the plasma etch rate

Edgar Schönbächler; Baudouin Lecohier; Wolfgang Fichtner

J. Vac. Sci. Technol. B 15, 2011–2015 (1997) https://doi.org/10.1116/1.589593

Abstract

View articletitled, Influence of AlSiTi grain boundaries on the plasma etch rate

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Schottky contacts on reactive-ion etched InGaP

Ján Kuzmı́k; Juraj Darmo; Robert Kúdela; Štefan Haščı́k; Želmı́ra Mozolová

J. Vac. Sci. Technol. B 15, 2016–2020 (1997) https://doi.org/10.1116/1.589594

Abstract

View articletitled, Schottky contacts on reactive-ion etched InGaP

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Molecular beam epitaxy growth of ${In}_{y2} {Al}_{1−y2} {As/In}_{0.73} {Ga}_{0.27} {As/In}_{y1} {Al}_{1−y1} As/$ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

C. Jiang; B. Xu; H. X. Li; F. Q. Liu; Q. Gong; W. Zhou; D. H. Zhu; J. B. Liang; Z. G. Wang

J. Vac. Sci. Technol. B 15, 2021–2025 (1997) https://doi.org/10.1116/1.589218

Abstract

View articletitled, Molecular beam epitaxy growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>y2</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>1−y2</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As/In</mi><mrow><mtext>0.73</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.27</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As/In</mi><mrow><mtext>y1</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>1−y1</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As/</mi></math> InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

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Structure and interfacial stability of (111)-oriented InAsSb/InAs strained-layer multiquantum well structures

Scott C. Theiring; Manoj R. Pillai; Scott A. Barnett; Bruce W. Wessels

J. Vac. Sci. Technol. B 15, 2026–2030 (1997) https://doi.org/10.1116/1.589217

Abstract

View articletitled, Structure and interfacial stability of (111)-oriented InAsSb/InAs strained-layer multiquantum well structures

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Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using ${CH}_{4} / H_{2} / O_{2} / Ar$ reactive ion etching

Jeff E. Schramm; Dubravko I. Babić; Evelyn L. Hu; John E. Bowers; James L. Merz

J. Vac. Sci. Technol. B 15, 2031–2036 (1997) https://doi.org/10.1116/1.589219

Abstract

View articletitled, Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mn>4</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Ar</mi></math> reactive ion etching

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High-resolution depth profiling of In_x ${Ga}_{1−x}$ As/GaAs multiple quantum well structures by combination of secondary ion mass spectrometry and x-ray diffraction techniques

C. Gerardi; C. Giannini; A. Passaseo; L. Tapfer

J. Vac. Sci. Technol. B 15, 2037–2045 (1997) https://doi.org/10.1116/1.589220

Abstract

View articletitled, High-resolution depth profiling of Inx<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub></math>As/GaAs multiple quantum well structures by combination of secondary ion mass spectrometry and x-ray diffraction techniques

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Surface modification of InP by diffraction-patterning utilizing laser dry etching

Manoj Prasad; Harry E. Ruda; Jan J. Dubowski

J. Vac. Sci. Technol. B 15, 2046–2051 (1997) https://doi.org/10.1116/1.589221

Abstract

View articletitled, Surface modification of InP by diffraction-patterning utilizing laser dry etching

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Compression in transconductance at low gate voltages in submicron GaAs metal semiconductor field-effect transistors

M. M. Ahmed

J. Vac. Sci. Technol. B 15, 2052–2056 (1997) https://doi.org/10.1116/1.589222

Abstract

View articletitled, Compression in transconductance at low gate voltages in submicron GaAs metal semiconductor field-effect transistors

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Role of rate window, transient time, and reverse bias field on the deep levels of LT-GaAs by field effect transient spectroscopy

N. C. Halder; T. Goodman

J. Vac. Sci. Technol. B 15, 2057–2066 (1997) https://doi.org/10.1116/1.589223

Abstract

View articletitled, Role of rate window, transient time, and reverse bias field on the deep levels of LT-GaAs by field effect transient spectroscopy

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Electrical characterization of diamond and graphite coated Mo field emitters

M. T. McClure; R. Schlesser; B. L. McCarson; Z. Sitar

J. Vac. Sci. Technol. B 15, 2067–2071 (1997) https://doi.org/10.1116/1.589224

Abstract

View articletitled, Electrical characterization of diamond and graphite coated Mo field emitters

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Field emission characteristics of diamondlike carbon films synthesized by pulsed laser deposition process using a Au-intermediate layer

F. Y. Chuang; W. C. Wang; H. F. Cheng; C. Y. Sun; I. N. Lin

J. Vac. Sci. Technol. B 15, 2072–2076 (1997) https://doi.org/10.1116/1.589225

Abstract

View articletitled, Field emission characteristics of diamondlike carbon films synthesized by pulsed laser deposition process using a Au-intermediate layer

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Silicon nanocolloids prepared by a newly designed dc sputtering apparatus

Y. Zhu; K. Kimura; L. D. Zhang

J. Vac. Sci. Technol. B 15, 2077–2078 (1997) https://doi.org/10.1116/1.589226

View articletitled, Silicon nanocolloids prepared by a newly designed dc sputtering apparatus

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Nanofabrication using neutral atomic beams

J. H. Thywissen; K. S. Johnson; R. Younkin; N. H. Dekker; K. K. Berggren; A. P. Chu; M. Prentiss; S. A. Lee

J. Vac. Sci. Technol. B 15, 2093–2100 (1997) https://doi.org/10.1116/1.589227

Abstract

View articletitled, Nanofabrication using neutral atomic beams

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Single electron electronics: Challenge for nanofabrication

Haroon Ahmed

J. Vac. Sci. Technol. B 15, 2101–2108 (1997) https://doi.org/10.1116/1.589228

Abstract

View articletitled, Single electron electronics: Challenge for nanofabrication

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Potentials and challenges for lithography beyond 193 nm optics

John Canning

J. Vac. Sci. Technol. B 15, 2109–2111 (1997) https://doi.org/10.1116/1.589229

Abstract

View articletitled, Potentials and challenges for lithography beyond 193 nm optics

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Lithography with 157 nm lasers

T. M. Bloomstein; M. W. Horn; M. Rothschild; R. R. Kunz; S. T. Palmacci; R. B. Goodman

J. Vac. Sci. Technol. B 15, 2112–2116 (1997) https://doi.org/10.1116/1.589230

Abstract

View articletitled, Lithography with 157 nm lasers

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X-ray lithography: Status, challenges, and outlook for 0.13 μm

Jerome P. Silverman

J. Vac. Sci. Technol. B 15, 2117–2124 (1997) https://doi.org/10.1116/1.589231

Abstract

View articletitled, X-ray lithography: Status, challenges, and outlook for 0.13 μm

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Electron beam lithography for 0.13 μm manufacturing

Mark A. McCord

J. Vac. Sci. Technol. B 15, 2125–2129 (1997) https://doi.org/10.1116/1.589232

Abstract

View articletitled, Electron beam lithography for 0.13 μm manufacturing

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Scattering with angular limitation projection electron beam lithography for suboptical lithography

Lloyd R. Harriott

J. Vac. Sci. Technol. B 15, 2130–2135 (1997) https://doi.org/10.1116/1.589339

Abstract

View articletitled, Scattering with angular limitation projection electron beam lithography for suboptical lithography

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Ion projection lithography: Next generation technology?

G. Gross

J. Vac. Sci. Technol. B 15, 2136–2138 (1997) https://doi.org/10.1116/1.589340

Abstract

View articletitled, Ion projection lithography: Next generation technology?

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Two-dimensional stage self-calibration: Role of symmetry and invariant sets of points

Michael R. Raugh

J. Vac. Sci. Technol. B 15, 2139–2145 (1997) https://doi.org/10.1116/1.589341

Abstract

View articletitled, Two-dimensional stage self-calibration: Role of symmetry and invariant sets of points

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Neural network model for global alignment incorporating wafer and stage distortion

Amir A. Ghazanfarian; R. F. W. Pease; Xun Chen; Mark A. McCord

J. Vac. Sci. Technol. B 15, 2146–2150 (1997) https://doi.org/10.1116/1.589342

Abstract

View articletitled, Neural network model for global alignment incorporating wafer and stage distortion

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Monitoring of subquartermicron line and space pattern by ellipsometry

Hiroshi Arimoto

J. Vac. Sci. Technol. B 15, 2151–2154 (1997) https://doi.org/10.1116/1.589343

Abstract

View articletitled, Monitoring of subquartermicron line and space pattern by ellipsometry

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Scanning electron microscope matching and calibration for critical dimensional metrology

Herschel Marchman

J. Vac. Sci. Technol. B 15, 2155–2161 (1997) https://doi.org/10.1116/1.589344

Abstract

View articletitled, Scanning electron microscope matching and calibration for critical dimensional metrology

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Photon tunneling microscopy of latent resist images

J. A. Liddle; A. T. Fernandez; R. Cirelli; M. M. Mkrtchyan; A. E. Novembre; M. L. Peabody; G. P. Watson

J. Vac. Sci. Technol. B 15, 2162–2166 (1997) https://doi.org/10.1116/1.589345

Abstract

View articletitled, Photon tunneling microscopy of latent resist images

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Application of transmission electron detection to SCALPEL mask metrology

R. C. Farrow; M. T. Postek; W. J. Keery; S. N. Jones; J. R. Lowney; M. Blakey; L. A. Fetter; J. E. Griffith; J. A. Liddle; L. C. Hopkins; H. A. Huggins; M. Peabody; A. Novembre

J. Vac. Sci. Technol. B 15, 2167–2172 (1997) https://doi.org/10.1116/1.589346

Abstract

View articletitled, Application of transmission electron detection to SCALPEL mask metrology

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Obtaining a physical two-dimensional Cartesian reference

Michael T. Takac; Jun Ye; Michael R. Raugh; R. Fabian Pease; C. Neil Berglund; Geraint Owen

J. Vac. Sci. Technol. B 15, 2173–2176 (1997) https://doi.org/10.1116/1.589347

Abstract

View articletitled, Obtaining a physical two-dimensional Cartesian reference

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Evaluation of the long-term stability of critical-dimension measurement scanning electron microscopes using a calibration standard

Fumio Mizuno; Minoru Shimizu; Katsuhiro Sasada; Takeshi Mizuno

J. Vac. Sci. Technol. B 15, 2177–2180 (1997) https://doi.org/10.1116/1.589348

Abstract

View articletitled, Evaluation of the long-term stability of critical-dimension measurement scanning electron microscopes using a calibration standard

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Contamination reduction in low voltage electron-beam microscopy for dimensional metrology

W. H. Bruenger; H. Kleinschmidt; W. Hässler-Grohne; H. Bosse

J. Vac. Sci. Technol. B 15, 2181–2184 (1997) https://doi.org/10.1116/1.589349

Abstract

View articletitled, Contamination reduction in low voltage electron-beam microscopy for dimensional metrology

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Accurate alignment on asymmetrical signals

Xun Chen; Amir A. Ghazanfarian; Mark McCord; R. Fabian W. Pease

J. Vac. Sci. Technol. B 15, 2185–2188 (1997) https://doi.org/10.1116/1.589610

Abstract

View articletitled, Accurate alignment on asymmetrical signals

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Wall angle measurement with a scanning probe microscope employing a one-dimensional force sensor

J. E. Griffith; L. C. Hopkins; C. E. Bryson; A. Berghaus; E. J. Snyder; J. J. Plombon; L. A. Vasilyev; M. Hecht; J. B. Bindell

J. Vac. Sci. Technol. B 15, 2189–2192 (1997) https://doi.org/10.1116/1.589611

Abstract

View articletitled, Wall angle measurement with a scanning probe microscope employing a one-dimensional force sensor

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Design and characterization of a high numerical aperture lens system for scanned laser lithography

P. C. Allen; M. J. Bohan; P. D. Buck

J. Vac. Sci. Technol. B 15, 2193–2196 (1997) https://doi.org/10.1116/1.589612

Abstract

View articletitled, Design and characterization of a high numerical aperture lens system for scanned laser lithography

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Metrology of scattering with angular limitation projection electron lithography masks

J. A. Liddle; M. I. Blakey; T. Saunders; R. C. Farrow; L. A. Fetter; C. S. Knurek; R. Kasica; A. E. Novembre; M. L. Peabody; D. M. Tennant; D. L. Windt; M. Postek

J. Vac. Sci. Technol. B 15, 2197–2203 (1997) https://doi.org/10.1116/1.589613

Abstract

View articletitled, Metrology of scattering with angular limitation projection electron lithography masks

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Design and implementation of a real-time hierarchical parallel postprocessor for 100 keV electron beam lithography

Lawrence P. Muray; Erik H. Anderson; Volker Boegli

J. Vac. Sci. Technol. B 15, 2204–2208 (1997) https://doi.org/10.1116/1.589614

Abstract

View articletitled, Design and implementation of a real-time hierarchical parallel postprocessor for 100 keV electron beam lithography

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Measurement of resist heating in photomask fabrication

Sergey Babin

J. Vac. Sci. Technol. B 15, 2209–2213 (1997) https://doi.org/10.1116/1.589615

Abstract

View articletitled, Measurement of resist heating in photomask fabrication

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Ion absorbing stencil mask coatings for ion beam lithography

J. R. Wasson; J. L. Torres; H. R. Rampersad; J. C. Wolfe; P. Ruchhoeft; Martin Herbordt; H. Löschner

J. Vac. Sci. Technol. B 15, 2214–2217 (1997) https://doi.org/10.1116/1.589616

Abstract

View articletitled, Ion absorbing stencil mask coatings for ion beam lithography

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Novel technique for improving pattern placement in membrane mask making

F. Keith Perkins; Christie R. K. Marrian; Martin C. Peckerar

J. Vac. Sci. Technol. B 15, 2218–2223 (1997) https://doi.org/10.1116/1.589617

Abstract

View articletitled, Novel technique for improving pattern placement in membrane mask making

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Conductive polyaniline: Applications in x-ray mask making

M. S. Lawliss; J. M. Rocque; M. Angelopoulos; D. M. Puisto; R. W. Henry

J. Vac. Sci. Technol. B 15, 2224–2227 (1997) https://doi.org/10.1116/1.589618

Abstract

View articletitled, Conductive polyaniline: Applications in x-ray mask making

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Low-stress sputtered chromium–nitride hardmasks for x-ray mask fabrication

Shinji Tsuboi; Setsu Kotsuji; Takuya Yoshihara; Katsumi Suzuki

J. Vac. Sci. Technol. B 15, 2228–2231 (1997) https://doi.org/10.1116/1.589619

Abstract

View articletitled, Low-stress sputtered chromium–nitride hardmasks for x-ray mask fabrication

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Uniform low stress oxynitride films for application as hardmasks on x-ray masks

W. J. Dauksher; D. J. Resnick; S. M. Smith; S. V. Pendharkar; H. G. Tompkins; K. D. Cummings; P. A. Seese; P. J. S. Mangat; J. A. Chan

J. Vac. Sci. Technol. B 15, 2232–2237 (1997) https://doi.org/10.1116/1.589620

Abstract

View articletitled, Uniform low stress oxynitride films for application as hardmasks on x-ray masks

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Automatic mask generation in x-ray lithography

B. S. Bollepalli; M. Khan; F. Cerrina

J. Vac. Sci. Technol. B 15, 2238–2242 (1997) https://doi.org/10.1116/1.589621

Abstract

View articletitled, Automatic mask generation in x-ray lithography

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Practical approach to separating the pattern generator-induced mask CD errors from the blank/process-induced mask CD errors using conventional market measurements

Liqun Han; Weidong Wang; Mark A. McCord; C. N. Berglund; R. F. W. Pease; L. Suzanne Weaver

J. Vac. Sci. Technol. B 15, 2243–2248 (1997) https://doi.org/10.1116/1.589622

Abstract

View articletitled, Practical approach to separating the pattern generator-induced mask CD errors from the blank/process-induced mask CD errors using conventional market measurements

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Pattern placement errors in mask membranes

A. H. Fisher; M. F. Laudon; R. L. Engelstad; E. G. Lovell; F. Cerrina

J. Vac. Sci. Technol. B 15, 2249–2254 (1997) https://doi.org/10.1116/1.589623

Abstract

View articletitled, Pattern placement errors in mask membranes

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Revisiting phase shifting masks in x-ray lithography

Mumit Khan; Srinivas Bollepalli; Franco Cerrina

J. Vac. Sci. Technol. B 15, 2255–2258 (1997) https://doi.org/10.1116/1.589624

Abstract

View articletitled, Revisiting phase shifting masks in x-ray lithography

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Plasma reactive ion etching of 193 nm attenuated phase shift mask materials

B. W. Smith; C. Fonseca; L. Zavyalova; Z. Alam; A. Bourov

J. Vac. Sci. Technol. B 15, 2259–2262 (1997) https://doi.org/10.1116/1.589625

Abstract

View articletitled, Plasma reactive ion etching of 193 nm attenuated phase shift mask materials

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Effects of accelerating voltage and pattern size on electron scattering by electron-beam mask

Hiroshi Yamashita; Eiichi Nomura; Hiroshi Nozue

J. Vac. Sci. Technol. B 15, 2263–2268 (1997) https://doi.org/10.1116/1.589626

Abstract

View articletitled, Effects of accelerating voltage and pattern size on electron scattering by electron-beam mask

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Resistless electron beam lithography process for the fabrication of sub-50 nm silicide structures

D. Drouin; J. Beauvais; E. Lavallée; S. Michel; J. Mouine; R. Gauvin

J. Vac. Sci. Technol. B 15, 2269–2273 (1997) https://doi.org/10.1116/1.589627

Abstract

View articletitled, Resistless electron beam lithography process for the fabrication of sub-50 nm silicide structures

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Process development of sub-0.5 μm nonvolatile magnetoresistive random access memory arrays

K. Nordquist; S. Pendharkar; M. Durlam; D. Resnick; S. Tehrani; D. Mancini; T. Zhu; J. Shi

J. Vac. Sci. Technol. B 15, 2274–2278 (1997) https://doi.org/10.1116/1.589628

Abstract

View articletitled, Process development of sub-0.5 μm nonvolatile magnetoresistive random access memory arrays

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Electron optical system for the x-ray mask writer EB-X2

Kenichi Saito; Hirofumi Morita; Junichi Kato; Nobuo Shimazu

J. Vac. Sci. Technol. B 15, 2279–2283 (1997) https://doi.org/10.1116/1.589629

Abstract

View articletitled, Electron optical system for the x-ray mask writer EB-X2

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Performance of Zr/O/W Schottky emitters at reduced temperatures

H. S. Kim; M. L. Yu; M. G. R. Thomson; E. Kratschmer; T. H. P. Chang

J. Vac. Sci. Technol. B 15, 2284–2288 (1997) https://doi.org/10.1116/1.589630

Abstract

View articletitled, Performance of Zr/O/W Schottky emitters at reduced temperatures

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Blanked aperture array for parallel electron beam lithography

G. I. Winograd; R. F. W. Pease; M. A. McCord

J. Vac. Sci. Technol. B 15, 2289–2292 (1997) https://doi.org/10.1116/1.589631

Abstract

View articletitled, Blanked aperture array for parallel electron beam lithography

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Spatial-phase-locked electron-beam lithography with a delay-locked loop

J. Goodberlet; J. Ferrera; Henry I. Smith

J. Vac. Sci. Technol. B 15, 2293–2297 (1997) https://doi.org/10.1116/1.589632

Abstract

View articletitled, Spatial-phase-locked electron-beam lithography with a delay-locked loop

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Energy dependence of proximity parameters investigated by fitting before measurement tests

L. I. Aparshina; S. V. Dubonos; S. V. Maksimov; A. A. Svintsov; S. I. Zaitsev

J. Vac. Sci. Technol. B 15, 2298–2302 (1997) https://doi.org/10.1116/1.589633

Abstract

View articletitled, Energy dependence of proximity parameters investigated by fitting before measurement tests

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Dose, shape, and hybrid modifications for PYRAMID in electron beam proximity effect correction

Brian D. Cook; Soo-Young Lee

J. Vac. Sci. Technol. B 15, 2303–2308 (1997) https://doi.org/10.1116/1.589634

Abstract

View articletitled, Dose, shape, and hybrid modifications for PYRAMID in electron beam proximity effect correction

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Dose modification proximity effect correction scheme with inherent forward scattering corrections

G. Patrick Watson; Linus A. Fetter; J. Alexander Liddle

J. Vac. Sci. Technol. B 15, 2309–2312 (1997) https://doi.org/10.1116/1.589635

Abstract

View articletitled, Dose modification proximity effect correction scheme with inherent forward scattering corrections

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Deep submicron resist profile simulation and characterization of electron beam lithography system for cell projection and direct writing

Young-Mog Ham; Changbuhm Lee; Soo-Hwan Kim; Kukjin Chun

J. Vac. Sci. Technol. B 15, 2313–2317 (1997) https://doi.org/10.1116/1.589636

Abstract

View articletitled, Deep submicron resist profile simulation and characterization of electron beam lithography system for cell projection and direct writing

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Atomic force microscope studies of nanolithographic exposure and development of polymethylmethacrylate

Elizabeth A. Dobisz; Susan L. Brandow; Eric Snow; Robert Bass

J. Vac. Sci. Technol. B 15, 2318–2322 (1997) https://doi.org/10.1116/1.589637

Abstract

View articletitled, Atomic force microscope studies of nanolithographic exposure and development of polymethylmethacrylate

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Resist processes for low-energy electron-beam lithography

K.-D. Schock; F. E. Prins; S. Strähle; D. P. Kern

J. Vac. Sci. Technol. B 15, 2323–2326 (1997) https://doi.org/10.1116/1.589638

Abstract

View articletitled, Resist processes for low-energy electron-beam lithography

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Control in sub-100 nm lithography in SAL-601

Elizabeth A. Dobisz; Christie R. K. Marrian

J. Vac. Sci. Technol. B 15, 2327–2331 (1997) https://doi.org/10.1116/1.589639

Abstract

View articletitled, Control in sub-100 nm lithography in SAL-601

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Minimum emission current of liquid metal ion sources

J. C. Beckman; T. H. P. Chang; A. Wagner; R. F. W. Pease

J. Vac. Sci. Technol. B 15, 2332–2336 (1997) https://doi.org/10.1116/1.589640

Abstract

View articletitled, Minimum emission current of liquid metal ion sources

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Fabrication of in situ Ohmic contacts patterned in three dimensions using a focused ion beam during molecular beam epitaxial growth

P. J. A. Sazio; G. A. C. Jones; E. H. Linfield; D. A. Ritchie

J. Vac. Sci. Technol. B 15, 2337–2341 (1997) https://doi.org/10.1116/1.589641

Abstract

View articletitled, Fabrication of in situ Ohmic contacts patterned in three dimensions using a focused ion beam during molecular beam epitaxial growth

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N channel metal–oxide–semiconductor field-effect transistor with 0.15 $μ$ m gate delineated by focused ion beam lithography

Kohei Suzuki; Motoji Yamashita; Nobuyuki Kawakami; Akimitsu Nakaue

J. Vac. Sci. Technol. B 15, 2342–2345 (1997) https://doi.org/10.1116/1.589642

Abstract

View articletitled, N channel metal–oxide–semiconductor field-effect transistor with 0.15 <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">μ</mi></math>m gate delineated by focused ion beam lithography

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Focused ion beam sputter yield change as a function of scan speed

D. Santamore; K. Edinger; J. Orloff; J. Melngailis

J. Vac. Sci. Technol. B 15, 2346–2349 (1997) https://doi.org/10.1116/1.589643

Abstract

View articletitled, Focused ion beam sputter yield change as a function of scan speed

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Focused ion beam milling: Depth control for three-dimensional microfabrication

M. J. Vasile; Z. Niu; R. Nassar; W. Zhang; S. Liu

J. Vac. Sci. Technol. B 15, 2350–2354 (1997) https://doi.org/10.1116/1.589644

Abstract

View articletitled, Focused ion beam milling: Depth control for three-dimensional microfabrication

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Chemically amplified deep ultraviolet resist for positive tone ion exposure

W. H. Bruenger; M. Torkler; L.-M. Buchmann; W. Finkelstein

J. Vac. Sci. Technol. B 15, 2355–2357 (1997) https://doi.org/10.1116/1.589645

Abstract

View articletitled, Chemically amplified deep ultraviolet resist for positive tone ion exposure

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Printing halftone photographic images on diamond by focused silicon ion implantation

L. E. Erickson; H. G. Champion; J. W. Fraser; R. Hussey; P. Schmuki; C. Porco

J. Vac. Sci. Technol. B 15, 2358–2361 (1997) https://doi.org/10.1116/1.589646

Abstract

View articletitled, Printing halftone photographic images on diamond by focused silicon ion implantation

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Nanoparticle impact micromachining

A. Gruber; J. Gspann

J. Vac. Sci. Technol. B 15, 2362–2364 (1997) https://doi.org/10.1116/1.589647

Abstract

View articletitled, Nanoparticle impact micromachining

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Development of a high brightness gas field ion source

Klaus Edinger; Victor Yun; John Melngailis; Jon Orloff; Gerald Magera

J. Vac. Sci. Technol. B 15, 2365–2368 (1997) https://doi.org/10.1116/1.589648

Abstract

View articletitled, Development of a high brightness gas field ion source

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Stochastic Coulomb interactions in ion projection lithography systems with aberration-broadened crossover

P. Kruit; J. E. Barth; G. Lammer; A. Chalupka; H. Vonach; H. Löschner; G. Stengl

J. Vac. Sci. Technol. B 15, 2369–2372 (1997) https://doi.org/10.1116/1.589649

Abstract

View articletitled, Stochastic Coulomb interactions in ion projection lithography systems with aberration-broadened crossover

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Optimization of experimental operating parameters for very high resolution focused ion beam applications

J. Gierak; C. Vieu; M. Schneider; H. Launois; G. Ben Assayag; A. Septier

J. Vac. Sci. Technol. B 15, 2373–2378 (1997) https://doi.org/10.1116/1.589650

Abstract

View articletitled, Optimization of experimental operating parameters for very high resolution focused ion beam applications

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Fabrication of high-temperature superconductor Josephson junctions by focused ion beam milling

C.-H. Chen; Z. Trajanovic; Z. W. Dong; C. J. Lobb; T. Venkatesan; K. Edinger; J. Orloff; J. Melngailis

J. Vac. Sci. Technol. B 15, 2379–2381 (1997) https://doi.org/10.1116/1.589651

Abstract

View articletitled, Fabrication of high-temperature superconductor Josephson junctions by focused ion beam milling

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Programmable aperture plate for maskless high-throughput nanolithography

I. L. Berry; A. A. Mondelli; J. Nichols; J. Melngailis

J. Vac. Sci. Technol. B 15, 2382–2386 (1997) https://doi.org/10.1116/1.589652

Abstract

View articletitled, Programmable aperture plate for maskless high-throughput nanolithography

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Data analysis methods for evaluating lithographic performance

Richard A. Ferguson; Ronald M. Martino; Timothy A. Brunner

J. Vac. Sci. Technol. B 15, 2387–2393 (1997) https://doi.org/10.1116/1.589653

Abstract

View articletitled, Data analysis methods for evaluating lithographic performance

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Algorithm for shifter placement with flexible order prioritizing

Tamae Haruki; Junji Tomita; Satoru Asai; Isamu Hanyu

J. Vac. Sci. Technol. B 15, 2394–2398 (1997) https://doi.org/10.1116/1.589654

Abstract

View articletitled, Algorithm for shifter placement with flexible order prioritizing

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Characterizing partial coherence uniformity in a deep ultraviolet step and repeat tool

G. Patrick Watson; Raymond A. Cirelli; Masis Mkrtchyan; Richard J. Travers

J. Vac. Sci. Technol. B 15, 2399–2403 (1997) https://doi.org/10.1116/1.589655

Abstract

View articletitled, Characterizing partial coherence uniformity in a deep ultraviolet step and repeat tool

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Photolithography at 0.10 and 0.13 μm using ArF excimer laser lithography in combination with resolution enhancement techniques

M. Chan; R. R. Kunz; S. P. Doran; M. Rothschild

J. Vac. Sci. Technol. B 15, 2404–2411 (1997) https://doi.org/10.1116/1.589656

Abstract

View articletitled, Photolithography at 0.10 and 0.13 μm using ArF excimer laser lithography in combination with resolution enhancement techniques

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Optimal coherent decompositions for radially symmetric optical systems

R. M. von Bünau; Y. C. Pati; Y.-T. Wang; R. F. W. Pease

J. Vac. Sci. Technol. B 15, 2412–2416 (1997) https://doi.org/10.1116/1.589657

Abstract

View articletitled, Optimal coherent decompositions for radially symmetric optical systems

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Fresnel diffraction mask for optical projection lithography

Hisashi Watanabe; Yoshimitsu Okuda

J. Vac. Sci. Technol. B 15, 2417–2421 (1997) https://doi.org/10.1116/1.589658

Abstract

View articletitled, Fresnel diffraction mask for optical projection lithography

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Towards 280 nm $i$ -line random logic lithography with off-axis illumination and optical proximity correction

I. Grodnensky; G. P. Watson; J. Garofalo; D. Castro; L. Zych; W. Lee

J. Vac. Sci. Technol. B 15, 2422–2425 (1997) https://doi.org/10.1116/1.589659

Abstract

View articletitled, Towards 280 nm <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">i</mi></math>-line random logic lithography with off-axis illumination and optical proximity correction

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Optical proximity correction for intermediate-pitch features using sub-resolution scattering bars

J. Fung Chen; Tom Laidig; Kurt E. Wampler; Roger Caldwell

J. Vac. Sci. Technol. B 15, 2426–2433 (1997) https://doi.org/10.1116/1.589660

Abstract

View articletitled, Optical proximity correction for intermediate-pitch features using sub-resolution scattering bars

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Viability of conventional KrF imaging for 150 nm lithography

T. Azuma; K. Matsunaga; D. Kawamura; S. Mimotogi; Y. Onishi

J. Vac. Sci. Technol. B 15, 2434–2438 (1997) https://doi.org/10.1116/1.589661

Abstract

View articletitled, Viability of conventional KrF imaging for 150 nm lithography

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Methods for fabricating arrays of holes using interference lithography

A. Fernandez; J. Y. Decker; S. M. Herman; D. W. Phillion; D. W. Sweeney; M. D. Perry

J. Vac. Sci. Technol. B 15, 2439–2443 (1997) https://doi.org/10.1116/1.589662

Abstract

View articletitled, Methods for fabricating arrays of holes using interference lithography

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Investigation into excimer laser radiation damage of deep ultraviolet optical phase masking films

B. W. Smith; L. Zavyalova; A. Bourov; S. Butt; C. Fonseca

J. Vac. Sci. Technol. B 15, 2444–2447 (1997) https://doi.org/10.1116/1.589663

Abstract

View articletitled, Investigation into excimer laser radiation damage of deep ultraviolet optical phase masking films

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Use of attenuated phase masks in extreme ultraviolet lithography

O. R. Wood, II; D. L. White; J. E. Bjorkholm; L. E. Fetter; D. M. Tennant; A. A. MacDowell; B. LaFontaine; G. D. Kubiak

J. Vac. Sci. Technol. B 15, 2448–2451 (1997) https://doi.org/10.1116/1.589664

Abstract

View articletitled, Use of attenuated phase masks in extreme ultraviolet lithography

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Mask blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers

P. A. Kearney; C. E. Moore; S. I. Tan; S. P. Vernon; R. A. Levesque

J. Vac. Sci. Technol. B 15, 2452–2454 (1997) https://doi.org/10.1116/1.589665

Abstract

View articletitled, Mask blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers

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At-wavelength interferometry for extreme ultraviolet lithography

Edita Tejnil; Kenneth A. Goldberg; SangHun Lee; Hector Medecki; Phillip J. Batson; Paul E. Denham; Alastair A. MacDowell; Jeffrey Bokor; David Attwood

J. Vac. Sci. Technol. B 15, 2455–2461 (1997) https://doi.org/10.1116/1.589666

Abstract

View articletitled, At-wavelength interferometry for extreme ultraviolet lithography

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At-wavelength characterization of an extreme ultraviolet camera from low to mid-spatial frequencies with a compact laser plasma source

A. K. Ray-Chaudhuri; K. D. Krenz; C. H. Fields

J. Vac. Sci. Technol. B 15, 2462–2466 (1997) https://doi.org/10.1116/1.589667

Abstract

View articletitled, At-wavelength characterization of an extreme ultraviolet camera from low to mid-spatial frequencies with a compact laser plasma source

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Minimum critical defects in extreme-ultraviolet lithography masks

Yun Lin; Jeffrey Bokor

J. Vac. Sci. Technol. B 15, 2467–2470 (1997) https://doi.org/10.1116/1.589668

Abstract

View articletitled, Minimum critical defects in extreme-ultraviolet lithography masks

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Evaluation of alignment accuracy in processed wafers and SiC masks on a scattered-light alignment system for x-ray aligners

Tsutomu Miyatake; Masaoki Hirose; Tsutomu Shoki; Ryo Ohkubo; Kuniaki Yamazaki

J. Vac. Sci. Technol. B 15, 2471–2475 (1997) https://doi.org/10.1116/1.589669

Abstract

View articletitled, Evaluation of alignment accuracy in processed wafers and SiC masks on a scattered-light alignment system for x-ray aligners

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Overlay performance of 180 nm ground rule generation x-ray lithography aligner

A. C. Chen; A. L. Flamholz; R. Rippstein; R. H. Fair; D. A. Heald; R. J. Amodeo

J. Vac. Sci. Technol. B 15, 2476–2482 (1997) https://doi.org/10.1116/1.589670

Abstract

View articletitled, Overlay performance of 180 nm ground rule generation x-ray lithography aligner

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Origin of stress distribution in sputtered x-ray absorber film

Yoshihisa Iba; Fumiaki Kumasaka; Hajime Aoyama; Takao Taguchi; Masaki Yamabe

J. Vac. Sci. Technol. B 15, 2483–2488 (1997) https://doi.org/10.1116/1.589671

Abstract

View articletitled, Origin of stress distribution in sputtered x-ray absorber film

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Sub-20 nm x-ray nanolithography using conventional mask technologies on monochromatized synchrotron radiation

G. Simon; A. M. Haghiri-Gosnet; J. Bourneix; D. Decanini; Y. Chen; F. Rousseaux; H. Launois; B. Vidal

J. Vac. Sci. Technol. B 15, 2489–2494 (1997) https://doi.org/10.1116/1.589672

Abstract

View articletitled, Sub-20 nm x-ray nanolithography using conventional mask technologies on monochromatized synchrotron radiation

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X-ray micro- and nanofabrication using a laser–plasma source at 1 nm wavelength

I. C. E. Turcu; R. M. Allot; C. M. Mann; C. Reeves; I. N. Ross; N. Lisi; B. J. Maddison; S. W. Moon; P. Prewett; J. T. M. Stevenson; A. W. S. Ross; A. M. Gundlach; B. Koek; P. Mitchell; P. Anastasi; C. McCoard; N. S. Kim

J. Vac. Sci. Technol. B 15, 2495–2502 (1997) https://doi.org/10.1116/1.589673

Abstract

View articletitled, X-ray micro- and nanofabrication using a laser–plasma source at 1 nm wavelength

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Novel illumination system of synchrotron radiation stepper with full field exposure method

Yutaka Watanabe; Shinichi Hara; Nobutoshi Mizusawa; Yasuaki Fukuda; Shunichi Uzawa

J. Vac. Sci. Technol. B 15, 2503–2508 (1997) https://doi.org/10.1116/1.589674

Abstract

View articletitled, Novel illumination system of synchrotron radiation stepper with full field exposure method

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Direct measurement of the effect of substrate photoelectrons in x-ray nanolithography

D. J. D. Carter; A. Pepin; M. R. Schweizer; H. I. Smith; L. E. Ocola

J. Vac. Sci. Technol. B 15, 2509–2513 (1997) https://doi.org/10.1116/1.589675

Abstract

View articletitled, Direct measurement of the effect of substrate photoelectrons in x-ray nanolithography

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X-ray fabrication of nonorthogonal structures using “surface” masks

V. White; C. Herdey; D. D. Denton; J. Song

J. Vac. Sci. Technol. B 15, 2514–2516 (1997) https://doi.org/10.1116/1.589676

Abstract

View articletitled, X-ray fabrication of nonorthogonal structures using “surface” masks

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X-ray lithography for $⩽ 100 nm$ ground rules in complex patterns

Scott Hector; Victor Pol; Azalia Krasnoperova; Juan Maldonado; Alex Flamholz; Dave Heald; Carl Stahlhammer; Dan Galburt; Ralph Amodeo; Tom Donohue; Shalom Wind; James Buchigniano; Raman Viswanathan; Mumit Khan; Srinivas Bollepalli; Franco Cerrina

J. Vac. Sci. Technol. B 15, 2517–2521 (1997) https://doi.org/10.1116/1.589677

Abstract

View articletitled, X-ray lithography for <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="bold" xmlns="">⩽</mi><mtext xmlns="">100 </mtext><mi mathvariant="normal" xmlns="">nm</mi></math> ground rules in complex patterns

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Design and fabrication of Fresnel zone plates with large numbers of zones

Z. Chen; Y. Vladimirsky; M. Brown; Q. Leonard; O. Vladimirsky; F. Moore; F. Cerrina; B. Lai; W. Yun; E. Gluskin

J. Vac. Sci. Technol. B 15, 2522–2527 (1997) https://doi.org/10.1116/1.589678

Abstract

View articletitled, Design and fabrication of Fresnel zone plates with large numbers of zones

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Resist design concepts for 193 nm lithography: Opportunities for innovation and invention

E. Reichmanis; O. Nalamasu; F. M. Houlihan; T. I. Wallow; A. G. Timko; R. Cirelli; G. Dabbagh; R. S. Hutton; A. E. Novembre; B. W. Smith

J. Vac. Sci. Technol. B 15, 2528–2533 (1997) https://doi.org/10.1116/1.589679

Abstract

View articletitled, Resist design concepts for 193 nm lithography: Opportunities for innovation and invention

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Specific behavior of chemically amplified systems with low activation energy under electron-beam exposure: Implementation of 248 and 193 nm resists

B. Mortini; S. Tedesco; B. Dal’Zotto; P. Paniez

J. Vac. Sci. Technol. B 15, 2534–2540 (1997) https://doi.org/10.1116/1.589680

Abstract

View articletitled, Specific behavior of chemically amplified systems with low activation energy under electron-beam exposure: Implementation of 248 and 193 nm resists

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Polymer structure effect on dissolution characteristics and acid diffusion in chemically amplified deep ultraviolet resists

Toshiro Itani; Hiroshi Yoshino; Shuichi Hashimoto; Mitsuharu Yamana; Norihiko Samoto; Kunihiko Kasama

J. Vac. Sci. Technol. B 15, 2541–2544 (1997) https://doi.org/10.1116/1.589681

Abstract

View articletitled, Polymer structure effect on dissolution characteristics and acid diffusion in chemically amplified deep ultraviolet resists

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Latent image characterization of postexposure bake process in chemically amplified resists

L. E. Ocola; F. Cerrina; Tim May

J. Vac. Sci. Technol. B 15, 2545–2549 (1997) https://doi.org/10.1116/1.589682

Abstract

View articletitled, Latent image characterization of postexposure bake process in chemically amplified resists

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Deep ultraviolet resists AZ DX-561 and AZ DX-1300P applied for electron beam and masked ion beam lithography

P. Hudek; I. Kostic; M. Belov; I. W. Rangelow; F. Shi; G. Pawlowski; W. Spiess; H. Buschbeck; E. Cekan; S. Eder; H. Löschner

J. Vac. Sci. Technol. B 15, 2550–2554 (1997) https://doi.org/10.1116/1.589683

Abstract

View articletitled, Deep ultraviolet resists AZ DX-561 and AZ DX-1300P applied for electron beam and masked ion beam lithography

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Low energy electron beam top surface image processing using chemically amplified AXT resist

C. S. Whelan; D. M. Tanenbaum; D. C. La Tulipe; M. Isaacson; H. G. Craighead

J. Vac. Sci. Technol. B 15, 2555–2560 (1997) https://doi.org/10.1116/1.589684

Abstract

View articletitled, Low energy electron beam top surface image processing using chemically amplified AXT resist

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Theoretical discussion of diffusion effects in negative chemically amplified resists based on contrast curve simulation

G. P. Patsis; G. Meneghini; N. Glezos; P. Argitis

J. Vac. Sci. Technol. B 15, 2561–2564 (1997) https://doi.org/10.1116/1.589685

Abstract

View articletitled, Theoretical discussion of diffusion effects in negative chemically amplified resists based on contrast curve simulation

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Stress dependent silylation model and two-dimensional profile simulation

Marco A. Zuniga; Andrew R. Neureuther

J. Vac. Sci. Technol. B 15, 2565–2569 (1997) https://doi.org/10.1116/1.589686

Abstract

View articletitled, Stress dependent silylation model and two-dimensional profile simulation

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$C_{60}$ -incorporated nanocomposite resist system for practical nanometer pattern fabrication

T. Ishii; H. Nozawa; T. Tamamura; A. Ozawa

J. Vac. Sci. Technol. B 15, 2570–2574 (1997) https://doi.org/10.1116/1.589687

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">60</mi></mrow></msub></math>-incorporated nanocomposite resist system for practical nanometer pattern fabrication

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Increasing plasma etch resistance of resists using fullerene additives

Paul M. Dentinger; James W. Taylor

J. Vac. Sci. Technol. B 15, 2575–2581 (1997) https://doi.org/10.1116/1.589688

Abstract

View articletitled, Increasing plasma etch resistance of resists using fullerene additives

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Radiation-induced reactions of chemically amplified x-ray and electron-beam resists based on deprotection of $t$ -butoxycarbonyl groups

T. Kozawa; S. Nagahara; Y. Yoshida; S. Tagawa; T. Watanabe; Y. Yamashita

J. Vac. Sci. Technol. B 15, 2582–2586 (1997) https://doi.org/10.1116/1.589689

Abstract

View articletitled, Radiation-induced reactions of chemically amplified x-ray and electron-beam resists based on deprotection of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">t</mi></math>-butoxycarbonyl groups

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Optimizing the resist to the aerial image in a chemically amplified system

T. H. Fedynyshyn; C. R. Szmanda; G. J. Cernigliaro

J. Vac. Sci. Technol. B 15, 2587–2595 (1997) https://doi.org/10.1116/1.589690

Abstract

View articletitled, Optimizing the resist to the aerial image in a chemically amplified system

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Nanolithography performances of ultraviolet III chemically amplified positive resist

L. Grella; M. Gentili; E. Di Fabrizio; M. Baciocchi; L. Mastrogiacomo; R. Maggiora; L. Scopa

J. Vac. Sci. Technol. B 15, 2596–2600 (1997) https://doi.org/10.1116/1.589691

Abstract

View articletitled, Nanolithography performances of ultraviolet III chemically amplified positive resist

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Investigation of the notching effect for single layer deep ultraviolet resist processing

Hiroshi Yoshino; Toshiro Itani; Shuichi Hashimoto; Mitsuharu Yamana; Tsuyoshi Yoshii; Norihiko Samoto; Kunihiko Kasama

J. Vac. Sci. Technol. B 15, 2601–2604 (1997) https://doi.org/10.1116/1.589692

Abstract

View articletitled, Investigation of the notching effect for single layer deep ultraviolet resist processing

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Top surface imaging process at and below quarter-micron resolution and pattern transfer into metal

Mathias Irmscher; Bernd Höfflinger; Christian Reuter; Reinhard Springer; Craig Stauffer; Mark Puttock

J. Vac. Sci. Technol. B 15, 2605–2609 (1997) https://doi.org/10.1116/1.589693

Abstract

View articletitled, Top surface imaging process at and below quarter-micron resolution and pattern transfer into metal

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T-top forming simulation using percolation theory

K. Kamon; K. Nakazawa; A. Yamaguchi; N. Matsuzawa; T. Ohfuji; K. Kanzaki; S. Tagawa

J. Vac. Sci. Technol. B 15, 2610–2615 (1997) https://doi.org/10.1116/1.589694

Abstract

View articletitled, T-top forming simulation using percolation theory

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Developer temperature effect on negative deep ultraviolet resists: Characterization, modeling, and simulation

Paul Isaac Hagouel; Ioannis Karafyllidis; Andrew R. Neureuther

J. Vac. Sci. Technol. B 15, 2616–2620 (1997) https://doi.org/10.1116/1.589695

Abstract

View articletitled, Developer temperature effect on negative deep ultraviolet resists: Characterization, modeling, and simulation

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Ultrasonic and dip resist development processes for 50 nm device fabrication

K. L. Lee; J. Bucchignano; J. Gelorme; R. Viswanathan

J. Vac. Sci. Technol. B 15, 2621–2626 (1997) https://doi.org/10.1116/1.589696

Abstract

View articletitled, Ultrasonic and dip resist development processes for 50 nm device fabrication

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Quarter-micron chemically amplified reaction image determination using arrested development

Steven J. Rhyner; James W. Taylor

J. Vac. Sci. Technol. B 15, 2627–2631 (1997) https://doi.org/10.1116/1.589697

Abstract

View articletitled, Quarter-micron chemically amplified reaction image determination using arrested development

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Quantification of the extent of reaction in a negative, novolac-based, chemically amplified resist

Paul M. Dentinger; James W. Taylor

J. Vac. Sci. Technol. B 15, 2632–2638 (1997) https://doi.org/10.1116/1.589698

Abstract

View articletitled, Quantification of the extent of reaction in a negative, novolac-based, chemically amplified resist

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0.1 μm WSiN-gate fabrication of GaAs metal-semiconductor field effect transistors using electron cyclotron resonance ion stream etching with ${SF}_{6} {–CF}_{4} {–SiF}_{4} {–O}_{2}$

Yoshito Jin; Chiharu Takahashi; Kazumi Nishimura; Toshiro Ono; Seitaro Matsuo

J. Vac. Sci. Technol. B 15, 2639–2642 (1997) https://doi.org/10.1116/1.589699

Abstract

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Time dependence of etch-induced damage generated by an electron cyclotron resonance source

E. W. Berg; S. W. Pang

J. Vac. Sci. Technol. B 15, 2643–2647 (1997) https://doi.org/10.1116/1.589700

Abstract

View articletitled, Time dependence of etch-induced damage generated by an electron cyclotron resonance source

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Characterization of the radiation-enhanced diffusion of dry-etch damage in $n$ -GaAs

Ching-Hui Chen; Yi-Jen Chiu; Evelyn L. Hu

J. Vac. Sci. Technol. B 15, 2648–2651 (1997) https://doi.org/10.1116/1.589701

Abstract

View articletitled, Characterization of the radiation-enhanced diffusion of dry-etch damage in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-GaAs

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Ion induced damage in strained CdZnSe/ZnSe quantum well structures

L. M. Sparing; P. D. Wang; A. M. Mintairov; S. Lee; U. Bindley; C. H. Chen; S. S. Shi; J. K. Furdyna; J. L. Merz; G. L. Snider

J. Vac. Sci. Technol. B 15, 2652–2655 (1997) https://doi.org/10.1116/1.589702

Abstract

View articletitled, Ion induced damage in strained CdZnSe/ZnSe quantum well structures

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Low damage thermally assisted electron cyclotron resonance etch technology for wide bandgap II-VI materials

T. Kümmell; G. Bacher; A. Forchel; J. Nürnberger; W. Faschinger; G. Landwehr; B. Jobst; D. Hommel

J. Vac. Sci. Technol. B 15, 2656–2660 (1997) https://doi.org/10.1116/1.589703

Abstract

View articletitled, Low damage thermally assisted electron cyclotron resonance etch technology for wide bandgap II-VI materials

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High reflectivity micromirrors fabricated by coating high aspect ratio Si sidewalls

W. H. Juan; Y. H. Kao; S. W. Pang

J. Vac. Sci. Technol. B 15, 2661–2665 (1997) https://doi.org/10.1116/1.589704

Abstract

View articletitled, High reflectivity micromirrors fabricated by coating high aspect ratio Si sidewalls

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Layer-by-layer sputtering of Si(111) and (001) surfaces mediated by surface vacancy diffusion: Surface physics and application for nanofabrication

Heiji Watanabe; Masakazu Ichikawa

J. Vac. Sci. Technol. B 15, 2666–2671 (1997) https://doi.org/10.1116/1.589705

Abstract

View articletitled, Layer-by-layer sputtering of Si(111) and (001) surfaces mediated by surface vacancy diffusion: Surface physics and application for nanofabrication

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Role of defect diffusion in the InP damage profile

D. G. Yu; C.-H. Chen; A. L. Holmes, Jr.; S. P. DenBaars; E. L. Hu

J. Vac. Sci. Technol. B 15, 2672–2675 (1997) https://doi.org/10.1116/1.589706

Abstract

View articletitled, Role of defect diffusion in the InP damage profile

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Interactive effects in reactive ion etching of $W_{1−x} {Ge}_{x}$

E. van der Drift; B. Q. Dinh; P. A. Verhoeven; E. J. M. Fakkeldij; M. R. Zuiddam; T. Zijlstra

J. Vac. Sci. Technol. B 15, 2676–2681 (1997) https://doi.org/10.1116/1.589707

Abstract

View articletitled, Interactive effects in reactive ion etching of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">W</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math>

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Deposition of silicon nitride by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition in $N_{2} {/Ar/SiH}_{4}$

S. A. Moshkalyov; J. A. Diniz; J. W. Swart; P. J. Tatsch; M. Machida

J. Vac. Sci. Technol. B 15, 2682–2687 (1997) https://doi.org/10.1116/1.589708

Abstract

View articletitled, Deposition of silicon nitride by low-pressure electron cyclotron resonance plasma enhanced chemical vapor deposition in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">N</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/Ar/SiH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math>

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Protective film by magnetic plasma polymerization on a Y–Ba–Cu–O superconductor

Jin Xinyu; Zhang Yu; Wang Rui; Chen Kangsheng; Liang Suzhen

J. Vac. Sci. Technol. B 15, 2688–2691 (1997) https://doi.org/10.1116/1.589709

Abstract

View articletitled, Protective film by magnetic plasma polymerization on a Y–Ba–Cu–O superconductor

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Electron and ion optical design software for integrated circuit manufacturing equipment

Eric Munro

J. Vac. Sci. Technol. B 15, 2692–2701 (1997) https://doi.org/10.1116/1.589710

Abstract

View articletitled, Electron and ion optical design software for integrated circuit manufacturing equipment

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Compact electrostatic lithography column for nanoscale exposure

Tom Chisholm; Haoning Liu; Eric Munro; John Rouse; Xieqing Zhu

J. Vac. Sci. Technol. B 15, 2702–2706 (1997) https://doi.org/10.1116/1.589711

Abstract

View articletitled, Compact electrostatic lithography column for nanoscale exposure

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Semiconductor on glass photocathodes for high throughput maskless electron beam lithography

A. W. Baum; J. E. Schneider; R. F. W. Pease; M. A. McCord; W. E. Spicer; K. A. Costello; V. W. Aebi

J. Vac. Sci. Technol. B 15, 2707–2712 (1997) https://doi.org/10.1116/1.589712

Abstract

View articletitled, Semiconductor on glass photocathodes for high throughput maskless electron beam lithography

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Micromachined single-crystal silicon electron lenses

Wolfgang Hofmann; Noel C. MacDonald

J. Vac. Sci. Technol. B 15, 2713–2717 (1997) https://doi.org/10.1116/1.589713

Abstract

View articletitled, Micromachined single-crystal silicon electron lenses

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Filter design methodology for defect detection in wafer inspection

Robert J. Socha; Andrew R. Neureuther

J. Vac. Sci. Technol. B 15, 2718–2724 (1997) https://doi.org/10.1116/1.589714

Abstract

View articletitled, Filter design methodology for defect detection in wafer inspection

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Electrostatic deflection aberrations revisited: Solution proposed to an old problem

Michael Retsky

J. Vac. Sci. Technol. B 15, 2725–2728 (1997) https://doi.org/10.1116/1.589715

Abstract

View articletitled, Electrostatic deflection aberrations revisited: Solution proposed to an old problem

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Micro-extraction spectrometer structures for voltage contrast in the scanning electron microscope

A. R. Dinnis

J. Vac. Sci. Technol. B 15, 2729–2731 (1997) https://doi.org/10.1116/1.589716

Abstract

View articletitled, Micro-extraction spectrometer structures for voltage contrast in the scanning electron microscope

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Spherical aberration corrector using space charge

L. C. Chao; J. Orloff; Li Wang

J. Vac. Sci. Technol. B 15, 2732–2736 (1997) https://doi.org/10.1116/1.589717

Abstract

View articletitled, Spherical aberration corrector using space charge

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Novel objective lens for low voltage electron beam imaging

W. Liu; M. McCord; R. F. Pease

J. Vac. Sci. Technol. B 15, 2737–2741 (1997) https://doi.org/10.1116/1.589718

Abstract

View articletitled, Novel objective lens for low voltage electron beam imaging

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Miniature electron beam column with a silicon micro field emitter

Ichiro Honjo; Yasuhiro Endo; Shunji Goto

J. Vac. Sci. Technol. B 15, 2742–2748 (1997) https://doi.org/10.1116/1.589719

Abstract

View articletitled, Miniature electron beam column with a silicon micro field emitter

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Fabrication of multiple microcolumn array combined with field emission array

Jeong-Young Park; Jared D. Lera; M. A. Yakshin; S. S. Choi; Y. Lee; K. J. Chun; J. D. Lee; D. Jeon; Young Kuk

J. Vac. Sci. Technol. B 15, 2749–2753 (1997) https://doi.org/10.1116/1.589720

Abstract

View articletitled, Fabrication of multiple microcolumn array combined with field emission array

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Optimization of field-emission columns for next-generation MEBES^® systems

H. Pearce-Percy; F. Abboud; R. Garcia; M. Mankos

J. Vac. Sci. Technol. B 15, 2754–2759 (1997) https://doi.org/10.1116/1.589721

Abstract

View articletitled, Optimization of field-emission columns for next-generation MEBES® systems

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Fabrication of nanoelectromechanical systems in single crystal silicon using silicon on insulator substrates and electron beam lithography

D. W. Carr; H. G. Craighead

J. Vac. Sci. Technol. B 15, 2760–2763 (1997) https://doi.org/10.1116/1.589722