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September 1997

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Nanoscale etching of GaAs surfaces in electrolytic solutions by hole injection from a scanning tunneling microscope tip

C. Kaneshiro; T. Okumura

J. Vac. Sci. Technol. B 15, 1595–1598 (1997) https://doi.org/10.1116/1.589553

Abstract

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Effect of etch holes on the mechanical properties of polysilicon

William N. Sharpe, Jr.; Ranji Vaidyanathan; Bin Yuan; Gang Bao; Richard L. Edwards

J. Vac. Sci. Technol. B 15, 1599–1603 (1997) https://doi.org/10.1116/1.589554

Abstract

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Modification of surface morphology and optoelectronic response in porous Si films by electrochemical methods

Zhong-Hua Yang; Peng Zhang; De-Jun Wang; Tie-Jin Li

J. Vac. Sci. Technol. B 15, 1604–1606 (1997) https://doi.org/10.1116/1.589555

Abstract

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Visible photoluminescence of Ge nanocrystallites embedded in ${SiO}_{2}$ thin films

Lanping Yue; Yizhen He

J. Vac. Sci. Technol. B 15, 1607–1609 (1997) https://doi.org/10.1116/1.589556

Abstract

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Structure and phonon density of states in nanoclusters: Molecular dynamics study for Al

W. Schommers; M. Rieth

J. Vac. Sci. Technol. B 15, 1610–1612 (1997) https://doi.org/10.1116/1.589557

Abstract

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Thermal desorption of Si clusters from Si and Si-deposited Ta surfaces

Hideyuki Tanaka; Toshihiko Kanayama

J. Vac. Sci. Technol. B 15, 1613–1617 (1997) https://doi.org/10.1116/1.589558

Abstract

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Nanoscale organized assembly of nanoparticulate ${TiO}_{2}$ -stearate monolayers through the Langmuir–Blodgett method

Lin Song Li; Jie Zhang; Li Jun Wang; Yongmei Chen; Zheng Hui; Tie Jin Li; L. F. Chi; H. Fuchs

J. Vac. Sci. Technol. B 15, 1618–1622 (1997) https://doi.org/10.1116/1.589559

Abstract

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Tensor low energy electron diffraction study for the structure of a $Cr (001)-p-(1×1)- N$ surface

Chang-Seop Ri; Yong-Phil Cho; Jong-Bo Park; Jeong-Soo Kang; Se-Hoon Kim; Kyung-Hee Lee

J. Vac. Sci. Technol. B 15, 1623–1627 (1997) https://doi.org/10.1116/1.589560

Abstract

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Extraordinary growth of $C_{60}$ on a GaAs(001) As-rich $2×4$ surface

T. Sakurai; Qikun Xue; T. Hashizume; Y. Hasegawa

J. Vac. Sci. Technol. B 15, 1628–1632 (1997) https://doi.org/10.1116/1.589561

Abstract

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Precise force curves in air and liquid by magnetic force feedback

Shin-ichi Yamamoto; Hirofumi Yamada; Hiroshi Tokumoto

J. Vac. Sci. Technol. B 15, 1633–1636 (1997) https://doi.org/10.1116/1.589562

Abstract

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Possible multistranded DNA induced by acid denaturation–renaturation

Jian Wei Li; Fang Tian; Chen Wang; Chun Li Bai; En Hua Cao

J. Vac. Sci. Technol. B 15, 1637–1640 (1997) https://doi.org/10.1116/1.589563

Abstract

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Scanning tunneling microscopy and low energy electron diffraction study of the formation of a $∛×∛R30°$ reconstruction on the hydrogen etched Si(111) $1×1$ surface

D. Rogers; T. Tiedje

J. Vac. Sci. Technol. B 15, 1641–1646 (1997) https://doi.org/10.1116/1.589564

Abstract

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Frequency modulation detection high vacuum scanning force microscope with a self-oscillating piezoelectric cantilever

Jiaru Chu; Toshihiro Itoh; Chengkuo Lee; Tadatomo Suga; Kazutoshi Watanabe

J. Vac. Sci. Technol. B 15, 1647–1651 (1997) https://doi.org/10.1116/1.589565

Abstract

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Atomic force microscopy studies of ${Hg}_{1−x} {Cd}_{x} Te$ thin films grown by isothermal vapor phase epitaxy

S. Di Nardo; L. Lozzi; S. Santucci; S. Bernardi

J. Vac. Sci. Technol. B 15, 1652–1656 (1997) https://doi.org/10.1116/1.589566

Abstract

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Ga focused-ion-beam shallow-implanted quantum wires

M. Itoh; T. Saku; Y. Hirayama; S. Tarucha

J. Vac. Sci. Technol. B 15, 1657–1660 (1997) https://doi.org/10.1116/1.589350

Abstract

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Improved cold electron emission characteristics of electroluminescent porous silicon diodes

Xia Sheng; Hideki Koyama; Nobuyoshi Koshida; Shingo Iwasaki; Nobuyasu Negishi; Takashi Chuman; Takamasa Yoshikawa; Kiyohide Ogasawara

J. Vac. Sci. Technol. B 15, 1661–1665 (1997) https://doi.org/10.1116/1.589351

Abstract

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Nanoprotrusion model for field emission from integrated microtips

S. T. Purcell; Vu Thien Binh; R. Baptist

J. Vac. Sci. Technol. B 15, 1666–1677 (1997) https://doi.org/10.1116/1.589352

Abstract

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Electron emission from the pyramidal-shaped diamond after hydrogen and oxygen surface treatments

T. Yamada; H. Ishihara; K. Okano; S. Koizumi; J. Itoh

J. Vac. Sci. Technol. B 15, 1678–1681 (1997) https://doi.org/10.1116/1.589353

Abstract

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Technique for fabricating self-aligned gates onto silicon field emitter arrays

Chang-Chun Zhu; Hui Guan; Weidong Liu; Tian-Ying Li; Johnny K. O. Sin

J. Vac. Sci. Technol. B 15, 1682–1684 (1997) https://doi.org/10.1116/1.589354

Abstract

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Growth mechanism of planar-type GaAs nanowhiskers

K. Haraguchi; K. Hiruma; K. Hosomi; M. Shirai; T. Katsuyama

J. Vac. Sci. Technol. B 15, 1685–1687 (1997) https://doi.org/10.1116/1.589355

Abstract

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Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics

Hideo Namatsu; Seiji Horiguchi; Masao Nagase; Kenji Kurihara

J. Vac. Sci. Technol. B 15, 1688–1696 (1997) https://doi.org/10.1116/1.589356

Abstract

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Cyclotron resonance in asymmetric modulation-doped field-effect transistor heterostructures using ${In}_{x} {Ga}_{1−x} As$ quantum well and InAs–GaAs superlattice channels

L. A. Cury; F. M. Matinaga; S. L. S. Freire; M. V. B. Moreira; J. Beerens; M. A. Py

J. Vac. Sci. Technol. B 15, 1697–1702 (1997) https://doi.org/10.1116/1.589357

Abstract

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High quality interfaces in GaAs–AlAs quantum wells determined from high resolution photoluminescence

D. C. Reynolds; D. C. Look; B. Jogai; R. Kaspi; K. R. Evans; M. Estes

J. Vac. Sci. Technol. B 15, 1703–1706 (1997) https://doi.org/10.1116/1.589358

Abstract

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Role of atomic hydrogen in argon plasma-assisted epitaxy of InGaAsP/InP

R. R. LaPierre; B. J. Robinson; D. A. Thompson

J. Vac. Sci. Technol. B 15, 1707–1714 (1997) https://doi.org/10.1116/1.589359

Abstract

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Well surface roughness and fault density effects on the Hall mobility of ${In}_{x} {Ga}_{1−x} {As/In}_{y} {Al}_{1−y} As/InP$ high electron mobility transistors

F. Peiró; J. C. Ferrer; A. Cornet; J. R. Morante; M. Beck; M. A. Py

J. Vac. Sci. Technol. B 15, 1715–1723 (1997) https://doi.org/10.1116/1.589360

Abstract

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Submicron air-bridge interconnection process for complex gate geometries

Magnus Persson; Joakim Pettersson

J. Vac. Sci. Technol. B 15, 1724–1727 (1997) https://doi.org/10.1116/1.589361

Abstract

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High rate ${CH}_{4} {:H}_{2}$ plasma etch processes for InP

Colin S. Whelan; Thomas E. Kazior; Katerina Y. Hur

J. Vac. Sci. Technol. B 15, 1728–1732 (1997) https://doi.org/10.1116/1.589362

Abstract

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Influence of the gas mixture on the reactive ion etching of InP in ${CH}_{4}$ -H₂ plasmas

Y. Feurprier; Ch. Cardinaud; G. Turban

J. Vac. Sci. Technol. B 15, 1733–1740 (1997) https://doi.org/10.1116/1.589363

Abstract

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Electron irradiance of conductive sidewalls: A determining factor for pattern-dependent charging

Gyeong S. Hwang; Konstantinos P. Giapis

J. Vac. Sci. Technol. B 15, 1741–1746 (1997) https://doi.org/10.1116/1.589364

Abstract

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Sidewall deposition film in platinum etching with Ar/halogen mixed gas plasmas

Teruo Shibano; Tatsuo Oomori

J. Vac. Sci. Technol. B 15, 1747–1751 (1997) https://doi.org/10.1116/1.589519

Abstract

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Formation and mechanism of dimple/pit on Si substrate during ${WSi}_{x} / poly-Si$ gate stack etch

Paihung Pan; Louie Liu

J. Vac. Sci. Technol. B 15, 1752–1757 (1997) https://doi.org/10.1116/1.589520

Abstract

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Integrated plasma-promoted chemical vapor deposition route to aluminum interconnect and plug technologies for emerging computer chip metallization

Jonathan Faltermeier; Andreas Knorr; Robert Talevi; Heidi Gundlach; Kaushik Arun Kumar; Gregory G. Peterson; Alain E. Kaloyeros; John J. Sullivan; James Loan

J. Vac. Sci. Technol. B 15, 1758–1766 (1997) https://doi.org/10.1116/1.589521

Abstract

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Accuracy of thin film stress measurements with $c$ -Si microbeams fabricated by dry etching

M. Boutry; A. Bosseboeuf; T. Bourouina; J. P. Grandchamp; E. Dufour-Gergam; J. P. Gilles

J. Vac. Sci. Technol. B 15, 1767–1772 (1997) https://doi.org/10.1116/1.589522

Abstract

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Study of Ohmic contact resistance to ${Ga}_{(1−X)} {In}_{(X)} As/InP$ composite channel InP high electron mobility transistors for $X=35%$ to $X=81%$

J. B. Shealy; M. Matloubian; T. Liu; C. Ngo

J. Vac. Sci. Technol. B 15, 1773–1774 (1997) https://doi.org/10.1116/1.589523

Abstract

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Reliable 0.28 μm metal contact technology

J. S. Kim; C. J. Kang; J. W. Park; S. H. Chung; B. C. Kim; J. Y. Lee; J. W. Park

J. Vac. Sci. Technol. B 15, 1775–1779 (1997) https://doi.org/10.1116/1.589524

Abstract

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Study of the copper reflow process using the GROFILMS simulator

L. J. Friedrich; D. S. Gardner; S. K. Dew; M. J. Brett; T. Smy

J. Vac. Sci. Technol. B 15, 1780–1787 (1997) https://doi.org/10.1116/1.589525

Abstract

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Across-wafer nonuniformity of long throw sputter deposition

A. A. Mayo; S. Hamaguchi; J. H. Joo; S. M. Rossnagel

J. Vac. Sci. Technol. B 15, 1788–1793 (1997) https://doi.org/10.1116/1.589526

Abstract

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Experimental evidence of two-dimensional–three-dimensional transition in the Stranski–Krastanow coherent growth

M. Berti; A. V. Drigo; G. Rossetto; G. Torzo

J. Vac. Sci. Technol. B 15, 1794–1799 (1997) https://doi.org/10.1116/1.589527

Abstract

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Anomalous behavior of resistance in Al alloy interconnections stacked with Ti layers during electromigration tests

T. Kouno; M. Hosaka; H. Niwa; M. Yamada

J. Vac. Sci. Technol. B 15, 1800–1804 (1997) https://doi.org/10.1116/1.589528

Abstract

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Self-assembled monolayers exposed by metastable argon and metastable helium for neutral atom lithography and atomic beam imaging

A. Bard; K. K. Berggren; J. L. Wilbur; J. D. Gillaspy; S. L. Rolston; J. J. McClelland; W. D. Phillips; M. Prentiss; G. M. Whitesides

J. Vac. Sci. Technol. B 15, 1805–1810 (1997) https://doi.org/10.1116/1.589529

Abstract

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Hybrid atomic force/scanning tunneling lithography

Kathryn Wilder; Hyongsok T. Soh; Abdullah Atalar; Calvin F. Quate

J. Vac. Sci. Technol. B 15, 1811–1817 (1997) https://doi.org/10.1116/1.589530

Abstract

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Nanolithography by displacement of catalytic metal clusters using an atomic force microscope tip

S. L. Brandow; W. J. Dressick; C. S. Dulcey; T. S. Koloski; L. M. Shirey; J. Schmidt; J. M. Calvert

J. Vac. Sci. Technol. B 15, 1818–1824 (1997) https://doi.org/10.1116/1.589531

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Extension of krypton fluoride excimer laser lithography to the fabrication of 0.18 μm devices

Tohru Ogawa; Masaya Uematsu; Koichi Takeuchi; Tatsuji Oda

J. Vac. Sci. Technol. B 15, 1825–1832 (1997) https://doi.org/10.1116/1.589532

Abstract

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Distortion aberration in a symmetric magnetic doublet for an electron beam projection system

Mamoru Nakasuji

J. Vac. Sci. Technol. B 15, 1833–1838 (1997) https://doi.org/10.1116/1.589533

Abstract

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On the link between electron shadowing and charging damage

Gyeong S. Hwang; Konstantinos P. Giapis

J. Vac. Sci. Technol. B 15, 1839–1842 (1997) https://doi.org/10.1116/1.589336

Abstract

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Low temperature plasma enhanced chemical vapor deposition of fluorinated silicon oxide films as an interlayer dielectric

Juho Song; P. K. Ajmera; G. S. Lee

J. Vac. Sci. Technol. B 15, 1843–1846 (1997) https://doi.org/10.1116/1.589337

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Erratum: “Neutral shadowing in circular cylindrical trench holes” [J. Vac. Sci. Technol. B 14, 3492 (1996)]

Barbara Abraham-Shrauner; Wenjing Chen

J. Vac. Sci. Technol. B 15, 1847 (1997) https://doi.org/10.1116/1.589338

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