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July 1997

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Microstructure control in semiconductor metallization

J. M. E. Harper; K. P. Rodbell

J. Vac. Sci. Technol. B 15, 763–779 (1997) https://doi.org/10.1116/1.589407

Abstract

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Dual unit scanning tunneling microscope-atomic force microscope for length measurement based on reference scales

Haijun Zhang; Feng Huang; Toshiro Higuchi

J. Vac. Sci. Technol. B 15, 780–784 (1997) https://doi.org/10.1116/1.589408

Abstract

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Magnetic nanostructures fabricated by scanning tunneling microscope-assisted chemical vapor deposition

Woei Wu Pai; Jiandi Zhang; John F. Wendelken; R. J. Warmack

J. Vac. Sci. Technol. B 15, 785–787 (1997) https://doi.org/10.1116/1.589409

Abstract

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Force modulation atomic force microscopy recording for ultrahigh density recording

S. Hosaka; H. Koyanagi; A. Kikukawa; M. Miyamoto; K. Nakamura; K. Etoh

J. Vac. Sci. Technol. B 15, 788–792 (1997) https://doi.org/10.1116/1.589410

Abstract

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Nanofabrication of electrodes with sub-5 nm spacing for transport experiments on single molecules and metal clusters

A. Bezryadin; C. Dekker

J. Vac. Sci. Technol. B 15, 793–799 (1997) https://doi.org/10.1116/1.589411

Abstract

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Deconvolution of tip affected atomic force microscope images and comparison to Rutherford backscattering spectrometry

M. F. Tabet; F. K. Urban, III

J. Vac. Sci. Technol. B 15, 800–804 (1997) https://doi.org/10.1116/1.589412

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Effect of substrate temperature and annealing on the structural properties of ZnO ultrafine particle films

Zhao Dachun; Qu Zhongkai; Pan Xiaoren; Dai Muji; Sun Minggen

J. Vac. Sci. Technol. B 15, 805–808 (1997) https://doi.org/10.1116/1.589413

Abstract

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Ion implanted nanostructures on Ge(111) surfaces observed by atomic force microscopy

Y. J. Chen; I. H. Wilson; W. Y. Cheung; J. B. Xu; S. P. Wong

J. Vac. Sci. Technol. B 15, 809–813 (1997) https://doi.org/10.1116/1.589414

Abstract

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Nanometer table-top proximity x-ray lithography with liquid-target laser-plasma source

L. Malmqvist; A. L. Bogdanov; L. Montelius; H. M. Hertz

J. Vac. Sci. Technol. B 15, 814–817 (1997) https://doi.org/10.1116/1.589490

Abstract

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Low-energy focused-ion-beam exposure characteristics of an amorphous ${Se}_{75} {Ge}_{25}$ resist

Hyun-Yong Lee; Hong-Bay Chung

J. Vac. Sci. Technol. B 15, 818–822 (1997) https://doi.org/10.1116/1.589491

Abstract

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Novel effects in inorganic ${As}_{50} {Se}_{50}$ photoresists and their application in micro-optics

V. Lyubin; M. Klebanov; I. Bar; S. Rosenwaks; N. P. Eisenberg; M. Manevich

J. Vac. Sci. Technol. B 15, 823–827 (1997) https://doi.org/10.1116/1.589492

Abstract

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Imaging characteristics of poly(methyl methacrylate) at vacuum ultraviolet wavelengths

I. E. Ferincz; Cs. Tóth; J. F. Young

J. Vac. Sci. Technol. B 15, 828–832 (1997) https://doi.org/10.1116/1.589493

Abstract

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Design optimization for two lens focused ion beam columns

Li Wang

J. Vac. Sci. Technol. B 15, 833–839 (1997) https://doi.org/10.1116/1.589494

Abstract

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Field emission from amorphous diamond coated Mo tip emitters by pulsed laser deposition

M. Q. Ding; A. F. Myers; W. B. Choi; R. D. Vispute; S. M. Camphausen; J. Narayan; J. J. Cuomo; J. J. Hren; J. Bruley

J. Vac. Sci. Technol. B 15, 840–844 (1997) https://doi.org/10.1116/1.589495

Abstract

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Oxygen implantation induced interdiffusion in AlGaAs/GaAs quantum well structures

Padraig J. Hughes; Bernard L. Weiss; Spirit Tlali; Howard E. Jackson

J. Vac. Sci. Technol. B 15, 845–848 (1997) https://doi.org/10.1116/1.589496

Abstract

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Observation of hot electron relaxation in GaAs/AlGaAs multiple quantum wells by excitation spectroscopy

H. Z. Wu; J. H. Liu; G. O. Dong; J. Z. Wu; Z. Z. Ye; X. B. Jiang

J. Vac. Sci. Technol. B 15, 849–853 (1997) https://doi.org/10.1116/1.589497

Abstract

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Base metallization stability in InP/InGaAs heterojunction bipolar transistors and its influence on leakage currents

D. Caffin; C. Besombes; J. F. Bresse; P. Legay; G. Le Roux; G. Patriarche; P. Launay

J. Vac. Sci. Technol. B 15, 854–861 (1997) https://doi.org/10.1116/1.589498

Abstract

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Structural and optical characterizations of single three-dimensionally confined GaAs/AlAs structures grown on patterned GaAs (001) substrates

Jun-ichi Kasai; Sigehisa Tanaka; Katsuhiko Higuchi; Yoshifumi Katayama

J. Vac. Sci. Technol. B 15, 862–869 (1997) https://doi.org/10.1116/1.589499

Abstract

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Electrical transport properties of silicon delta-doped ${Al}_{0.30} {Ga}_{0.70} As$ samples showing suppression of the DX center features

J. A. Corrêa F.; A. G. de Oliveira; M. I. N. da Silva; G. M. Ribeiro; J. F. Sampaio

J. Vac. Sci. Technol. B 15, 870–875 (1997) https://doi.org/10.1116/1.589500

Abstract

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X-ray photoelectron spectroscopy study of GaAs(110) cleaved in alcoholic sulfide solutions

Vasily N. Bessolov; Elena V. Konenkova; Mikhail V. Lebedev

J. Vac. Sci. Technol. B 15, 876–879 (1997) https://doi.org/10.1116/1.589501

Abstract

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Effects of water vapor and chlorine on the epitaxial growth of ${Si}_{1−x} {Ge}_{x}$ films by chemical vapor deposition: Thermodynamic analysis

I.-M. Lee; A. Jansons; C. G. Takoudis

J. Vac. Sci. Technol. B 15, 880–885 (1997) https://doi.org/10.1116/1.589502

Abstract

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Integration issues for 850 nm optical modulators on Si electronics by direct epitaxy

J. E. Cunningham; W. Y. Jan

J. Vac. Sci. Technol. B 15, 886–890 (1997) https://doi.org/10.1116/1.589503

Abstract

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Interfacial reaction behavior of Pt, Pd, and Ni on ZnSe

K. J. Duxstad; E. E. Haller; K. M. Yu; E. D. Bourret; X. W. Lin; S. Ruvimov; Z. Liliental-Weber; J. Washburn

J. Vac. Sci. Technol. B 15, 891–898 (1997) https://doi.org/10.1116/1.589504

Abstract

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Ultrathin cobalt silicide layers formed by rapid thermal processing of metal on amorphous silicon

A. H. M. Kamal; M. J. Rack; M. N. Kozicki; D. K. Ferry; J. Lützen; J. A. Hallmark

J. Vac. Sci. Technol. B 15, 899–902 (1997) https://doi.org/10.1116/1.589505

Abstract

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Electrical characterization of iridium Schottky contacts to silicon: Early stages of silicidation

F. J. Jiménez-Leube; M. Clement; J. Sanz Maudes; T. Rodrı́guez

J. Vac. Sci. Technol. B 15, 903–907 (1997) https://doi.org/10.1116/1.589506

Abstract

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Linewidth dependence of stress relaxation and microstructural change in passivated Al(Cu) lines

I.-S. Yeo; P. S. Ho; S. G. H. Anderson; H. Kawasaki

J. Vac. Sci. Technol. B 15, 908–915 (1997) https://doi.org/10.1116/1.589507

Abstract

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Probeless voltage contrast using a focused ion beam for opens and shorts defect isolation of ultralarge scale integration technologies

Kenneth J. Giewont; Douglas B. Hunt; Klaus M. Hummler

J. Vac. Sci. Technol. B 15, 916–920 (1997) https://doi.org/10.1116/1.589508

Abstract

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Surface roughness of nitrided (0001) ${Al}_{2} O_{3}$ and AlN epilayers grown on (0001) ${Al}_{2} O_{3}$ by reactive molecular beam epitaxy

Wook Kim; M. Yeadon; A. E. Botchkarev; S. N. Mohammad; J. M. Gibson; H. Morkoç

J. Vac. Sci. Technol. B 15, 921–927 (1997) https://doi.org/10.1116/1.589509

Abstract

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Influences of the $[{(Ba,Sr)TiO}_{3}]$ -modified ${RuO}_{2}$ interface on the dielectric constant and current–voltage characteristics

Min-Seok Jeon; Duck-Kyun Choi

J. Vac. Sci. Technol. B 15, 928–934 (1997) https://doi.org/10.1116/1.589510

Abstract

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Equipment simulation of SiGe heteroepitaxy: Model validation by ab initio calculations of surface diffusion processes

M. Hierlemann; C. Werner; A. Spitzer

J. Vac. Sci. Technol. B 15, 935–941 (1997) https://doi.org/10.1116/1.589511

Abstract

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Physical and electrical properties in metal-oxide-Si capacitors with various gate electrodes and gate oxides

K.-S. Chang-Liao; L.-C. Chen

J. Vac. Sci. Technol. B 15, 942–947 (1997) https://doi.org/10.1116/1.589512

Abstract

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Gas phase and surface reactions in subatmospheric chemical vapor deposition of tetraethylorthosilicate-ozone

William N. Gill; Seshadri Ganguli

J. Vac. Sci. Technol. B 15, 948–954 (1997) https://doi.org/10.1116/1.589513

Abstract

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Testing of a rapid fault detection model for quality control: Borophosphosilicate glass thin films monitored by infrared absorption spectroscopy

S. Zhang; J. E. Franke; T. M. Niemczyk; D. M. Haaland; J. N. Cox; I. Banerjee

J. Vac. Sci. Technol. B 15, 955–960 (1997) https://doi.org/10.1116/1.589514

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Highly preferred (111) texture aluminum-copper films formed with argon plasma treatment of the titanium underlayer and their electromigration endurance as interconnects

Kazuyoshi Kamoshida; Yasuyuki Ito

J. Vac. Sci. Technol. B 15, 961–966 (1997) https://doi.org/10.1116/1.589515

Abstract

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Surface nitridation of silicon dioxide with a high density nitrogen plasma

R. Kraft; T. P. Schneider; W. W. Dostalik; S. Hattangady

J. Vac. Sci. Technol. B 15, 967–970 (1997) https://doi.org/10.1116/1.589516

Abstract

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Ar, $N_{2},$ and ${Cl}_{2}$ electron cyclotron resonance plasmas measured by time-of-flight analysis: Neutral kinetic energies and source gas cracking

Rory S. Goodman; N. Materer; Stephen R. Leone

J. Vac. Sci. Technol. B 15, 971–982 (1997) https://doi.org/10.1116/1.589517

Abstract

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Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas

F. Ren; J. W. Lee; C. R. Abernathy; S. J. Pearton; C. Constantine; C. Barratt; R. J. Shul

J. Vac. Sci. Technol. B 15, 983–989 (1997) https://doi.org/10.1116/1.589518

Abstract

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Dry etching of germanium in magnetron enhanced ${SF}_{6}$ plasmas

G. F. McLane; M. Dubey; M. C. Wood; K. E. Lynch

J. Vac. Sci. Technol. B 15, 990–992 (1997) https://doi.org/10.1116/1.589551

Abstract

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Spatial variation of the etch rate for deep etching of silicon by reactive ion etching

Bo Asp Mo/ller Andersen; Ole Hansen; Martin Kristensen

J. Vac. Sci. Technol. B 15, 993–999 (1997) https://doi.org/10.1116/1.589552

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Efficiency evaluation of postetch metal stack anticorrosion treatments using chemical analyses by x-ray photoelectron spectroscopy and wide dispersive x-ray fluorescence

P. Czuprynski; O. Joubert; M. Heitzmann; D. Louis; C. Vizioz; E. Lajoinie

J. Vac. Sci. Technol. B 15, 1000–1007 (1997) https://doi.org/10.1116/1.589383

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Isolation of a lattice-mismatched AlInAs/GaInAs layer on InP using ion implantation for high energy mobility transistor realization

Hervé Fourré; Jean Claude Pesant; Olivier Schuler; Alain Cappy

J. Vac. Sci. Technol. B 15, 1008–1010 (1997) https://doi.org/10.1116/1.589384

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Quantitative measurement of two-dimensional dopant profile by cross-sectional scanning capacitance microscopy

J. S. McMurray; J. Kim; C. C. Williams

J. Vac. Sci. Technol. B 15, 1011–1014 (1997) https://doi.org/10.1116/1.589385

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Atomic wires and their electronic properties

Toshishige Yamada

J. Vac. Sci. Technol. B 15, 1019–1026 (1997) https://doi.org/10.1116/1.589386

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Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

R. S. Goldman; R. M. Feenstra; C. Silfvenius; B. Stålnacke; G. Landgren

J. Vac. Sci. Technol. B 15, 1027–1033 (1997) https://doi.org/10.1116/1.589387

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Spatial variations in luminescence and carrier relaxation in molecular beam epitaxial grown ${(InP)}_{2} {/(GaP)}_{2}$ quantum wires

Y. Tang; D. H. Rich; A. M. Moy; K. Y. Cheng

J. Vac. Sci. Technol. B 15, 1034–1039 (1997) https://doi.org/10.1116/1.589388

Abstract

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Optical properties of semiconductor nanostructures

T. L. Reinecke; P. A. Knipp; S. N. Walck

J. Vac. Sci. Technol. B 15, 1040–1044 (1997) https://doi.org/10.1116/1.589389

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Electronic structure and optical behavior of self-assembled InAs quantum dots

K. W. Berryman; S. A. Lyon; Mordechai Segev

J. Vac. Sci. Technol. B 15, 1045–1050 (1997) https://doi.org/10.1116/1.589390

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Surface morphology and quantum dot self-assembly in growth of strained-layer semiconducting films

K. E. Khor; S. Das Sarma

J. Vac. Sci. Technol. B 15, 1051–1055 (1997) https://doi.org/10.1116/1.589391

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Morphological stability of strained-layer semiconductors

B. W. Wessels

J. Vac. Sci. Technol. B 15, 1056–1058 (1997) https://doi.org/10.1116/1.589392

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Second harmonic spectroscopy of Si(001) surfaces: Sensitivity to surface hydrogen and doping, and applications to kinetic measurements

Z. Xu; X. F. Hu; D. Lim; J. G. Ekerdt; M. C. Downer

J. Vac. Sci. Technol. B 15, 1059–1064 (1997) https://doi.org/10.1116/1.589415

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On the mechanism of the hydrogen-induced exfoliation of silicon

M. K. Weldon; V. E. Marsico; Y. J. Chabal; A. Agarwal; D. J. Eaglesham; J. Sapjeta; W. L. Brown; D. C. Jacobson; Y. Caudano; S. B. Christman; E. E. Chaban

J. Vac. Sci. Technol. B 15, 1065–1073 (1997) https://doi.org/10.1116/1.589416

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Minimization of suboxide transition regions at Si– ${SiO}_{2}$ interfaces by 900 °C rapid thermal annealing

G. Lucovsky; A. Banerjee; B. Hinds; B. Claflin; K. Koh; H. Yang

J. Vac. Sci. Technol. B 15, 1074–1079 (1997) https://doi.org/10.1116/1.589417

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Investigation of existing defects and defect generation in device-grade ${SiO}_{2}$ by ballistic electron emission spectroscopy

H. J. Wen; R. Ludeke

J. Vac. Sci. Technol. B 15, 1080–1088 (1997) https://doi.org/10.1116/1.589418

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Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress

E. S. Daniel; J. T. Jones; O. J. Marsh; T. C. McGill

J. Vac. Sci. Technol. B 15, 1089–1096 (1997) https://doi.org/10.1116/1.589419

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Plasma-assisted formation of low defect density ${SiC–SiO}_{2}$ interfaces

A. Gölz; G. Lucovsky; K. Koh; D. Wolfe; H. Niimi; H. Kurz

J. Vac. Sci. Technol. B 15, 1097–1104 (1997) https://doi.org/10.1116/1.589420

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Raman spectra as a measure of interface alloying for IV/IV superlattices

Jian Zi; Kaiming Zhang; Xide Xie

J. Vac. Sci. Technol. B 15, 1105–1107 (1997) https://doi.org/10.1116/1.589421

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Measurement of band offsets in ${Si/Si}_{1−x} {Ge}_{x}$ and ${Si/Si}_{1−x−y} {Ge}_{x} C_{y}$ heterojunctions

B. L. Stein; E. T. Yu; E. T. Croke; A. T. Hunter; T. Laursen; A. E. Bair; J. W. Mayer; C. C. Ahn

J. Vac. Sci. Technol. B 15, 1108–1111 (1997) https://doi.org/10.1116/1.589422

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Interfaces of strained layer $({Ge}_{n} {Si}_{m})_{p}$ superlattices studied by second-harmonic generation

Xudong Xiao; Chun Zhang; A. B. Fedotov; Zhenghao Chen; M. M. T. Loy

J. Vac. Sci. Technol. B 15, 1112–1116 (1997) https://doi.org/10.1116/1.589423

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Two-dimensional electron gas in AlGaN/GaN heterostructures

J. Z. Li; J. Y. Lin; H. X. Jiang; M. A. Khan; Q. Chen

J. Vac. Sci. Technol. B 15, 1117–1120 (1997) https://doi.org/10.1116/1.589424

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Microstructure, vibrational and electronic properties of GaN grown by molecular beam epitaxy on ${Al}_{2} O_{3} (0001)$ and 6H-SiC(0001)

D. Freundt; D. Holz; H. Lüth; M. Romani; A. Rizzi; D. Gerthsen

J. Vac. Sci. Technol. B 15, 1121–1127 (1997) https://doi.org/10.1116/1.589425

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Raman monitoring of molecular beam epitaxial growth of GaN on GaAs (100) and Si (111)

D. Drews; A. Schneider; D. R. T. Zahn

J. Vac. Sci. Technol. B 15, 1128–1132 (1997) https://doi.org/10.1116/1.589426

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Nitridation of the GaAs (001) surface using atomic nitrogen

P. Hill; D. I. Westwood; L. Haworth; J. Lu; J. E. Macdonald

J. Vac. Sci. Technol. B 15, 1133–1138 (1997) https://doi.org/10.1116/1.589427

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Optical transitions in InGaN/AlGaN single quantum wells

K. C. Zeng; M. Smith; J. Y. Lin; H. X. Jiang; J. C. Robert; E. L. Piner; F. G. McIntosh; S. M. Bedair; J. Zavada

J. Vac. Sci. Technol. B 15, 1139–1143 (1997) https://doi.org/10.1116/1.589428

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Theory of interfaces and surfaces in wide-gap nitrides

Marco Buongiorno Nardelli; Krzysztof Rapcewicz; J. Bernholc

J. Vac. Sci. Technol. B 15, 1144–1147 (1997) https://doi.org/10.1116/1.589429

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Growth and characterization of light emitting ZnS/GaN heterostructures

E. C. Piquette; Z. Z. Bandić; J. O. McCaldin; T. C. McGill

J. Vac. Sci. Technol. B 15, 1148–1152 (1997) https://doi.org/10.1116/1.589430

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Controlled formation of organic layers on semiconductor surfaces

Jennifer S. Hovis; Seung Lee; Hongbing Liu; Robert J. Hamers

J. Vac. Sci. Technol. B 15, 1153–1158 (1997) https://doi.org/10.1116/1.589431

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Gallium desorption behavior at AlGaAs/GaAs heterointerfaces during high-temperature molecular beam epitaxy

K. Mahalingam; D. L. Dorsey; K. R. Evans; Rama Venkat

J. Vac. Sci. Technol. B 15, 1159–1162 (1997) https://doi.org/10.1116/1.589432

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Kink defects and Fermi level pinning on (2×4) reconstructed molecular beam epitaxially grown surfaces of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy and x-ray photoelectron spectroscopy

Yasuhiko Ishikawa; Takashi Fukui; Hideki Hasegawa

J. Vac. Sci. Technol. B 15, 1163–1172 (1997) https://doi.org/10.1116/1.589433

Abstract

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Comparison of Si and GaAs/interfaces resulting from thermal and plasma oxidation

P. R. Lefebvre; E. A. Irene

J. Vac. Sci. Technol. B 15, 1173–1181 (1997) https://doi.org/10.1116/1.589434

Abstract

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Wet oxidation of AlAs films under ultrahigh vacuum conditions

W. J. Mitchell; C.-H. Chung; S. I. Yi; E. L. Hu; W. H. Weinberg

J. Vac. Sci. Technol. B 15, 1182–1186 (1997) https://doi.org/10.1116/1.589435

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Characterization of low-temperature grown AlSb and GaSb buffer layers

K. G. Eyink; M. L. Seaford; T. W. Haas; D. H. Tomich; W. V. Lampert; S. D. Walck; J. S. Solomon; W. C. Mitchel; L. F. Eastman

J. Vac. Sci. Technol. B 15, 1187–1190 (1997) https://doi.org/10.1116/1.589436

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Scanning tunneling microscopy and ballistic electron emission spectroscopy studies of molecular beam epitaxially grown ${Pt/CaF}_{2} /Si(111)$ structures

V. P. LaBella; L. J. Schowalter; C. A. Ventrice, Jr.

J. Vac. Sci. Technol. B 15, 1191–1195 (1997) https://doi.org/10.1116/1.589437

Abstract

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Evidence of near-surface localization of excited electronic states in crystalline Si

L. Mantese; K. A. Bell; U. Rossow; D. E. Aspnes

J. Vac. Sci. Technol. B 15, 1196–1200 (1997) https://doi.org/10.1116/1.589438

Abstract

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Microwave modulated photoluminescence as a contactless probe of interface states

C. E. Inglefield; M. C. DeLong; P. C. Taylor; J. F. Geisz; J. M. Olson

J. Vac. Sci. Technol. B 15, 1201–1204 (1997) https://doi.org/10.1116/1.589439

Abstract

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Surface and interface effects on ellipsometric spectra of crystalline Si

K. A. Bell; L. Mantese; U. Rossow; D. E. Aspnes

J. Vac. Sci. Technol. B 15, 1205–1211 (1997) https://doi.org/10.1116/1.589440

Abstract

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Reflectance-difference studies of interface-formation and initial-growth processes in ZnSe/GaAs(001) heteroepitaxy

T. Yasuda; K. Kimura; S. Miwa; L. H. Kuo; A. Ohtake; C. G. Jin; K. Tanaka; T. Yao

J. Vac. Sci. Technol. B 15, 1212–1220 (1997) https://doi.org/10.1116/1.589441

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Explanation of the linear correlation between barrier heights and ideality factors of real metal-semiconductor contacts by laterally nonuniform Schottky barriers

R. F. Schmitsdorf; T. U. Kampen; W. Mönch

J. Vac. Sci. Technol. B 15, 1221–1226 (1997) https://doi.org/10.1116/1.589442

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Evolution mechanism of nearly pinning-free platinum/ $n$ -type indium phosphide interface with a high Schottky barrier height by in situ electrochemical process

Hideki Hasegawa; Taketomo Sato; Tamotsu Hashizume

J. Vac. Sci. Technol. B 15, 1227–1235 (1997) https://doi.org/10.1116/1.589443

Abstract

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Comparison of electron affinity and Schottky barrier height of zirconium and copper–diamond interfaces

P. K. Baumann; R. J. Nemanich

J. Vac. Sci. Technol. B 15, 1236–1240 (1997) https://doi.org/10.1116/1.589444

Abstract

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Nature and origins of stacking faults from a ZnSe/GaAs interface

L. H. Kuo; K. Kimura; A. Ohtake; S. Miwa; T. Yasuda; T. Yao

J. Vac. Sci. Technol. B 15, 1241–1253 (1997) https://doi.org/10.1116/1.589445

Abstract

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Growth mode and defect generation in ZnSe heteroepitaxy on Te-terminated GaAs(001) surfaces

A. Ohtake; L. H. Kuo; T. Yasuda; K. Kimura; S. Miwa; T. Yao; K. Nakajima; K. Kimura

J. Vac. Sci. Technol. B 15, 1254–1259 (1997) https://doi.org/10.1116/1.589446

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In situ photoemission and reflectance anisotropy spectroscopy studies of CdS grown on InP(001)

Ch. Schultz; A. M. Frisch; K. Hinrichs; J. Kinsky; T. Herrmann; U. Rossow; N. Esser; W. Richter

J. Vac. Sci. Technol. B 15, 1260–1264 (1997) https://doi.org/10.1116/1.589447

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Effect of growth conditions on surface roughening of relaxed InGaAs on GaAs

T. Pinnington; C. Lavoie; T. Tiedje

J. Vac. Sci. Technol. B 15, 1265–1269 (1997) https://doi.org/10.1116/1.589448

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In-rich 4×2 reconstruction in novel planar growth of InAs on GaAs(001)

Q. K. Xue; Y. Hasegawa; T. Ogino; H. Kiyama; T. Sakurai

J. Vac. Sci. Technol. B 15, 1270–1273 (1997) https://doi.org/10.1116/1.589449

Abstract

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Subnanometer analysis of molecular beam epitaxy grown ternary arsenides

M. L. Seaford; W. Wu; K. G. Eyink; D. H. Tomich; J. R. Tucker; L. F. Eastman

J. Vac. Sci. Technol. B 15, 1274–1278 (1997) https://doi.org/10.1116/1.589450

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Local interface composition and extended defect density in ZnSe/GaAs(001) and ${ZnSe/In}_{0.04} {Ga}_{0.96} As (001)$ heterojunctions

S. Heun; J. J. Paggel; L. Sorba; S. Rubini; A. Franciosi; J.-M. Bonard; J.-D. Ganière

J. Vac. Sci. Technol. B 15, 1279–1285 (1997) https://doi.org/10.1116/1.589451

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Growth and characterization of Si and Ge clusters on ordered $C_{60}$ overlayers

D. Klyachko; D. M. Chen

J. Vac. Sci. Technol. B 15, 1295–1299 (1997) https://doi.org/10.1116/1.589452

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Interaction of $C_{60}$ with the (3×3) and (√3×√3) surfaces of $6H- SiC (0001):$ Adsorption, decomposition, and SiC growth

L. Li; Y. Hasegawa; H. Shinohara; T. Sakurai

J. Vac. Sci. Technol. B 15, 1300–1303 (1997) https://doi.org/10.1116/1.589453

Abstract

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Novel $C_{60}$ –DDME complex thin film with electrical bistable properties

M. Ouyang; Z. Q. Xue; K. Z. Wang; Q. D. Wu; D. Qiang

J. Vac. Sci. Technol. B 15, 1304–1306 (1997) https://doi.org/10.1116/1.589454

Abstract

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Si- and C-rich structure of the 6H-SiC(0001) surface

L. Li; Y. Hasegawa; T. Sakurai

J. Vac. Sci. Technol. B 15, 1307–1309 (1997) https://doi.org/10.1116/1.589455

Abstract

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Adsorption geometries of 1,9-decadiene on Si(111) 7×7 studied by scanning tunneling microscopy

D. Shachal; Y. Manassen

J. Vac. Sci. Technol. B 15, 1310–1312 (1997) https://doi.org/10.1116/1.589456

Abstract

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Study on surface and interface structures of nanocrystalline silicon by scanning tunneling microscopy

Juning Gao; Haiqiang Yang; Ning Liu; Dongxia Shi; Yueshan Jiang; Zengquan Xue; Shijin Pang; Yuliang He

J. Vac. Sci. Technol. B 15, 1313–1316 (1997) https://doi.org/10.1116/1.589457

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Diffusional attractions between voids on a Si(111)7×7 surface

E. Ter Ovanesyan; Y. Manassen; N. Ramesh Rao; Z. Olami

J. Vac. Sci. Technol. B 15, 1317–1324 (1997) https://doi.org/10.1116/1.589458

Abstract

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Liquid-phase adsorption process of β-picoline on stilbite (010) observed by atomic force microscopy

Masaharu Komiyama; Minming Gu

J. Vac. Sci. Technol. B 15, 1325–1329 (1997) https://doi.org/10.1116/1.589459

Abstract

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Magnetic nanostructures studied by scanning probe microscopy and spectroscopy

R. Wiesendanger; M. Bode; M. Kleiber; M. Löhndorf; R. Pascal; A. Wadas; D. Weiss

J. Vac. Sci. Technol. B 15, 1330–1334 (1997) https://doi.org/10.1116/1.589460

Abstract

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Magnetotransport through mesoscopic antidot arrays

Hongqi Xu

J. Vac. Sci. Technol. B 15, 1335–1337 (1997) https://doi.org/10.1116/1.589461

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Magnetic property of NiO ultrafine particles with a small Ni core

Sanshiro Sako; Kazunari Ohshima; Masahiro Sakai; Shunji Bandow

J. Vac. Sci. Technol. B 15, 1338–1342 (1997) https://doi.org/10.1116/1.589462

Abstract

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Magnetic force microscope images of magnetic domains in magnetic garnet

F. Tian; C. Wang; G. Y. Shang; N. X. Wang; C. L. Bai

J. Vac. Sci. Technol. B 15, 1343–1346 (1997) https://doi.org/10.1116/1.589534

Abstract

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Field induced antiferromagnetic ordering in NiS cluster confined in zeolite Y

Weiping Ding; Wei Zhong; Ning Zhang; Zaibing Guo; Gang Gu; Youwei Du

J. Vac. Sci. Technol. B 15, 1347–1349 (1997) https://doi.org/10.1116/1.589535

Abstract

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Study of the complex of the Schiff-base polymer with sulfate iron by magnetic force microscopy

F. Tian; C. Wang; C. L. Bai; W. G. Li; M. X. Wan

J. Vac. Sci. Technol. B 15, 1350–1352 (1997) https://doi.org/10.1116/1.589536

Abstract

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Imaging, polymerization, and reconstruction of polystyrene films with a scanning tunneling microscope

Z. Y. Hua; W. Xu

J. Vac. Sci. Technol. B 15, 1353–1358 (1997) https://doi.org/10.1116/1.589537

Abstract

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Application of the scanning force microscope in structuring and in temperature-dependent analysis of Au nanostructures

H. Göbel; L. Jacobs; P. von Blanckenhagen

J. Vac. Sci. Technol. B 15, 1359–1363 (1997) https://doi.org/10.1116/1.589538

Abstract

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Scanning tunneling microscopy modification of Ag thin films on Si(100): Local rearrangement of the Si substrate by Ag/Si eutectic phase formation

U. Memmert; U. Hodel; U. Hartmann

J. Vac. Sci. Technol. B 15, 1364–1368 (1997) https://doi.org/10.1116/1.589539

Abstract

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Novel lithography and signal processing with water vapor ions

H. W. P. Koops; E. Dobisz; J. Urban

J. Vac. Sci. Technol. B 15, 1369–1372 (1997) https://doi.org/10.1116/1.589540

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Fabrication of surface nanostructures by scanning tunneling microscope induced decomposition of ${SiH}_{4}$ and ${SiH}_{2} {Cl}_{2}$

H. Rauscher; F. Behrendt; R. J. Behm

J. Vac. Sci. Technol. B 15, 1373–1377 (1997) https://doi.org/10.1116/1.589541

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Studies of field related effects in the fabrication process on graphite using a scanning tunneling microscope

Chen Wang; Xiaodong Li; Guangyi Shang; Xiaohui Qiu; Chunli Bai

J. Vac. Sci. Technol. B 15, 1378–1381 (1997) https://doi.org/10.1116/1.589542

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Nanostructuring by reactive accelerated cluster erosion

A. Gruber; J. Gspann; P. von Blanckenhagen

J. Vac. Sci. Technol. B 15, 1382–1384 (1997) https://doi.org/10.1116/1.589543

Abstract

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Molecular patterns by manipulating DNA molecules

Zhen-qian Ouyang; Jun Hu; Sheng-fu Chen; Jie-lin Sun; Min-qian Li

J. Vac. Sci. Technol. B 15, 1385–1387 (1997) https://doi.org/10.1116/1.589544

Abstract

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Observation of modification and recovery of local properties of polyethylene oxide

H.-Y. Nie; M. Motomatsu; W. Mizutani; H. Tokumoto

J. Vac. Sci. Technol. B 15, 1388–1393 (1997) https://doi.org/10.1116/1.589545

Abstract

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Scanning probe nanofabrication of chemically active areas on substrate covered with organosilane monolayers

Hiroyuki Sugimura; Nobuyuki Nakagiri

J. Vac. Sci. Technol. B 15, 1394–1397 (1997) https://doi.org/10.1116/1.589546

Abstract

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Fabrication of hybrid superconductor–semiconductor nanostructures by integrated ultraviolet-atomic force microscope lithography

Pasqualantonio Pingue; Marco Lazzarino; Fabio Beltram; Ciro Cecconi; Paolo Baschieri; Carlo Frediani; Cesare Ascoli

J. Vac. Sci. Technol. B 15, 1398–1401 (1997) https://doi.org/10.1116/1.589547

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Metal-based single electron transistors

W. Chen; H. Ahmed

J. Vac. Sci. Technol. B 15, 1402–1405 (1997) https://doi.org/10.1116/1.589548

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Electron beam dot lithography for nanometer-scale tunnel junctions using a double-layered inorganic resist

Satoshi Haraichi; Toshimi Wada; Sucheta M. Gorwadkar; Kenichi Ishii; Hiroshi Hiroshima

J. Vac. Sci. Technol. B 15, 1406–1410 (1997) https://doi.org/10.1116/1.589549

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Negative differential resistance on single electron transport in a junction array of ultrasmall islands

Hiroshi Nakashima; Kiyohiko Uozumi

J. Vac. Sci. Technol. B 15, 1411–1413 (1997) https://doi.org/10.1116/1.589550

Abstract

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Patterning of Langmuir–Blodgett film with ultrahigh vacuum-scanning tunneling microscope/atomic force microscope

H. Hamanaka; T. Ono; M. Esashi

J. Vac. Sci. Technol. B 15, 1414–1418 (1997) https://doi.org/10.1116/1.589463

Abstract

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Molecular organization of azobenzene derivatives at the liquid/graphite interface observed with scanning tunneling microscopy

P. C. M. Grim; P. Vanoppen; M. Rücker; S. De Feyter; S. Valiyaveettil; G. Moessner; K. Müllen; F. C. De Schryver

J. Vac. Sci. Technol. B 15, 1419–1424 (1997) https://doi.org/10.1116/1.589464

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Formation of nanocolumn self-assembly by solvent polarity control

Xiangdong Chai; Wensheng Yang; Yunwei Cao; Yueshun Jiang; Ran Lu; Tiejin Li; Huixin He; Yongqiang Wang; Zhongfan Liu

J. Vac. Sci. Technol. B 15, 1425–1428 (1997) https://doi.org/10.1116/1.589465

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Writing and reading bit arrays for information storage using conductance change of a Langmuir–Blodgett film induced by scanning tunneling microscopy

K. Takimoto; R. Kuroda; S. Shido; S. Yasuda; H. Matsuda; K. Eguchi; T. Nakagiri

J. Vac. Sci. Technol. B 15, 1429–1431 (1997) https://doi.org/10.1116/1.589466

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Semiconducting, gas-sensing properties of Europium bisphthalocyanine Langmuir–Blodgett thin films

Bingjie Liang; Chunwei Yuan; Yu Wei

J. Vac. Sci. Technol. B 15, 1432–1436 (1997) https://doi.org/10.1116/1.589467

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Formation of Si nanowire by atomic manipulation with a high temperature scanning tunneling microscope

R. Hasunuma; T. Komeda; H. Mukaida; H. Tokumoto

J. Vac. Sci. Technol. B 15, 1437–1441 (1997) https://doi.org/10.1116/1.589468

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Study on photoelectric properties of a ${TiO}_{2}$ nanoparticle

Yongmei Chen; Yaan Cao; Yubai Bai; Wensheng Yang; Jihua Yang; Haiyan Jin; Tiejin Li

J. Vac. Sci. Technol. B 15, 1442–1444 (1997) https://doi.org/10.1116/1.589469

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Formation of nanocrystals in $a$ -Si thin films induced by pulsed laser ultraviolet irradiation

Z. Chvoj; V. Cháb; O. Borusı́k

J. Vac. Sci. Technol. B 15, 1445–1448 (1997) https://doi.org/10.1116/1.589470

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Atomic force microscopy investigations on the surface topographies of aluminum-based composite containing nanocluster diamond

Q. Ouyang; B. Wang; K. Okada

J. Vac. Sci. Technol. B 15, 1449–1451 (1997) https://doi.org/10.1116/1.589471

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Calculation of electronic energy levels in artificially confined cavities of a sphere and a circular cylinder

Yong Fang Zhao; Xiao Gong Jing; Lin Song Li; Li Jun Wang; Zheng Hui; Tie Jin Li

J. Vac. Sci. Technol. B 15, 1452–1455 (1997) https://doi.org/10.1116/1.589472

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Preparation and structural characterization of nanostructured CoAg granular films

H. Sang; G. Ni; J. Lu; H. Chen; J. R. Zhang; Y. W. Du

J. Vac. Sci. Technol. B 15, 1456–1459 (1997) https://doi.org/10.1116/1.589473

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Fabrication, characterization, and the photoelectric conversion of the nanostructured ${TiO}_{2}$ electrode

Huihua Deng; Zuhong Lu; Haifang Mao; Huijun Xu

J. Vac. Sci. Technol. B 15, 1460–1464 (1997) https://doi.org/10.1116/1.589474

Abstract

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Surface vibrational mode of ZnS nanoparticles

Jianfeng Xu; Haitao Mao; Yue Sun; Youwei Du

J. Vac. Sci. Technol. B 15, 1465–1467 (1997) https://doi.org/10.1116/1.589475

Abstract

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Photovoltaic study of nanocrystalline ${TiO}_{2}$ film modified with dye molecules

Jinghuai Fang; Jingwen Wu; Xiaomei Lu; Jianhua Gu; Zuhong Lu

J. Vac. Sci. Technol. B 15, 1468–1470 (1997) https://doi.org/10.1116/1.589476

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Visible luminescence from ${Si/SiO}_{2}$ superlattices

S. V. Novikov; J. Sinkkonen; O. Kilpelä; S. V. Gastev

J. Vac. Sci. Technol. B 15, 1471–1473 (1997) https://doi.org/10.1116/1.589477

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Numerical study of optical transmission in sandwich slabs: Implication to photon scanning tunneling microscopy

Shu Wang; Mufei Xiao; Jesús M. Siqueiros

J. Vac. Sci. Technol. B 15, 1474–1478 (1997) https://doi.org/10.1116/1.589478

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Analysis of frictional-force image patterns of a graphite surface

Naruo Sasaki; Masaru Tsukada; Satoru Fujisawa; Yasuhiro Sugawara; Seizo Morita; Katsuyoshi Kobayashi

J. Vac. Sci. Technol. B 15, 1479–1482 (1997) https://doi.org/10.1116/1.589479

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Quantification of topographic structure by scanning probe microscopy

James D. Kiely; Dawn A. Bonnell

J. Vac. Sci. Technol. B 15, 1483–1493 (1997) https://doi.org/10.1116/1.589480

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Error budget of step height and pitch measurement using a scanning tunneling microscope with a three-dimensional interferometer

Toru Fujii; Masataka Yamaguchi; Masatoshi Suzuki; Hirofumi Yamada; Kan Nakayama

J. Vac. Sci. Technol. B 15, 1494–1497 (1997) https://doi.org/10.1116/1.589481

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Principle of atomic grating and its application in nanotechnology

H. W. Hao; H. Qiao; H. K. Cheng; W. W. Wei; W. K. Yi

J. Vac. Sci. Technol. B 15, 1498–1501 (1997) https://doi.org/10.1116/1.589482

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Size and arrangement of elementary fibrils in crystalline cellulose studied with scanning tunneling microscopy

Y. Z. Zhang; X. L. Chen; J. Liu; P. J. Gao; D. X. Shi; S. J. Pang

J. Vac. Sci. Technol. B 15, 1502–1505 (1997) https://doi.org/10.1116/1.589483

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Nanomechanical surface characterization by atomic force acoustic microscopy

U. Rabe; V. Scherer; S. Hirsekorn; W. Arnold

J. Vac. Sci. Technol. B 15, 1506–1511 (1997) https://doi.org/10.1116/1.589484

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Detection mechanism of an optical evanescent field using a noncontact mode atomic force microscope with a frequency modulation detection method

Masayuki Abe; Takayuki Uchihashi; Masahiro Ohta; Hitoshi Ueyama; Yasuhiro Sugawara; Seizo Morita

J. Vac. Sci. Technol. B 15, 1512–1515 (1997) https://doi.org/10.1116/1.589485

Abstract

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Fabrication of probe tips for reflection scanning near-field optical microscopes: Chemical etching and heating-pulling methods

Mufei Xiao; Jesús Nieto; Roberto Machorro; Jesús Siqueiros; Hector Escamilla

J. Vac. Sci. Technol. B 15, 1516–1520 (1997) https://doi.org/10.1116/1.589486

Abstract

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Near-field optical microscopy with uncoated tips: Calibration, chemical contrast on organic crystals, and photolithography

G. Kaupp; A. Herrmann; M. Haak

J. Vac. Sci. Technol. B 15, 1521–1526 (1997) https://doi.org/10.1116/1.589487

Abstract

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Preparation of probe tips with well-defined spherical apexes for quantitative scanning force spectroscopy

U. D. Schwarz; O. Zwörner; P. Köster; R. Wiesendanger

J. Vac. Sci. Technol. B 15, 1527–1530 (1997) https://doi.org/10.1116/1.589488

Abstract

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Fabrication of a Si scanning probe microscopy tip with an ultrahigh vacuum-scanning tunneling microscope/atomic force microscope

Takahito Ono; Hiroaki Saitoh; Masayoshi Esashi

J. Vac. Sci. Technol. B 15, 1531–1534 (1997) https://doi.org/10.1116/1.589489

Abstract

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Conductive supertips for scanning probe applications

C. Schössler; J. Urban; H. W. P. Koops

J. Vac. Sci. Technol. B 15, 1535–1538 (1997) https://doi.org/10.1116/1.589394

Abstract

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Simultaneous optical detection techniques, interferometry, and optical beam deflection for dynamic mode control of scanning force microscopy

M. Hoummady; E. Farnault; T. Yahiro; H. Kawakatsu

J. Vac. Sci. Technol. B 15, 1539–1542 (1997) https://doi.org/10.1116/1.589395

Abstract

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Development of ultrahigh vacuum-atomic force microscopy with frequency modulation detection and its application to electrostatic force measurement

Takayuki Uchihashi; Masahiro Ohta; Yasuhiro Sugawara; Yoshio Yanase; Tatsuhiko Sigematsu; Mineharu Suzuki; Seizo Morita

J. Vac. Sci. Technol. B 15, 1543–1546 (1997) https://doi.org/10.1116/1.589396

Abstract

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Development of a metal patterned cantilever for scanning capacitance microscopy and its application to the observation of semiconductor devices

Takuma Yamamoto; Yoshihiko Suzuki; Masayuki Miyashita; Hiroyuki Sugimura; Nobuyuki Nakagiri

J. Vac. Sci. Technol. B 15, 1547–1550 (1997) https://doi.org/10.1116/1.589397

Abstract

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Novel high vacuum scanning force microscope using a piezoelectric cantilever and the phase detection method

Jiaru Chu; Toshihiro Itoh; Chengkuo Lee; Tadatomo Suga; Kazutoshi Watanabe

J. Vac. Sci. Technol. B 15, 1551–1555 (1997) https://doi.org/10.1116/1.589398

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New technique for nanocantilever fabrication based on local electrochemical etching: Applications to scanning force microscopy

M. Hoummady; E. Farnault; H. Fujita; H. Kawakatsu; T. Masuzawa

J. Vac. Sci. Technol. B 15, 1556–1558 (1997) https://doi.org/10.1116/1.589399

Abstract

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Development of a piezoelectric self-excitation and self-detection mechanism in PZT microcantilevers for dynamic scanning force microscopy in liquid

Chengkuo Lee; Toshihiro Itoh; Takahiro Ohashi; Ryutaro Maeda; Tadatomo Suga

J. Vac. Sci. Technol. B 15, 1559–1563 (1997) https://doi.org/10.1116/1.589400

Abstract

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Interface imaging by second-harmonic microscopy

M. Flörsheimer; M. Bösch; Ch. Brillert; M. Wierschem; H. Fuchs

J. Vac. Sci. Technol. B 15, 1564–1568 (1997) https://doi.org/10.1116/1.589401

Abstract

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Scanning acoustic tunneling microscopy and spectroscopy: A probing tool for acoustic surface oscillations

T. Hesjedal; E. Chilla; H.-J. Fröhlich

J. Vac. Sci. Technol. B 15, 1569–1572 (1997) https://doi.org/10.1116/1.589402

Abstract

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Investigation on a novel vacuum microelectronic pressure sensor with stepped field emission array

S. H. Xia; J. Liu; D. F. Cui; J. H. Han; S. F. Chen; L. Wang

J. Vac. Sci. Technol. B 15, 1573–1576 (1997) https://doi.org/10.1116/1.589403

Abstract

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Robotic nanomanipulation with a scanning probe microscope in a networked computing environment

C. Baur; B. C. Gazen; B. Koel; T. R. Ramachandran; A. A. G. Requicha; L. Zini

J. Vac. Sci. Technol. B 15, 1577–1580 (1997) https://doi.org/10.1116/1.589404

Abstract

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Using a new kind of organic complex system of electrical bistability for ultrahigh density data storage

H. J. Gao; L. P. Ma; H. X. Zhang; H. Y. Chen; Z. Q. Xue; S. J. Pang

J. Vac. Sci. Technol. B 15, 1581–1583 (1997) https://doi.org/10.1116/1.589405

Abstract

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Atomic force microscope-based data storage using replicated media

B. D. Terris; S. A. Rishton; H. J. Mamin; M. E. Best; J. A. Logan; D. Rugar

J. Vac. Sci. Technol. B 15, 1584–1587 (1997) https://doi.org/10.1116/1.589406

Abstract

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