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Issues
May 1997
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Fabrication of nanometer-size Si wires using a bevel wall as an electron cyclotron resonance plasma etching mask
J. Vac. Sci. Technol. B 15, 543–547 (1997)
https://doi.org/10.1116/1.589289
Time evolution of nanocontact structure between macroscopic metallic wires leading to nanowire formation
J. Vac. Sci. Technol. B 15, 548–553 (1997)
https://doi.org/10.1116/1.589290
Growth of silicon nanowires via gold/silane vapor–liquid–solid reaction
J. Vac. Sci. Technol. B 15, 554–557 (1997)
https://doi.org/10.1116/1.589291
Cluster size measurement using microtrench in a thermal plasma flash evaporation process
J. Vac. Sci. Technol. B 15, 558–565 (1997)
https://doi.org/10.1116/1.589292
1 μm range comparative length measurement using a regular crystalline lattice and a dual tunneling unit scanning tunneling microscope
J. Vac. Sci. Technol. B 15, 574–578 (1997)
https://doi.org/10.1116/1.589294
Integrated Fabry–Pérot distance control for atomic force microscopy
J. Vac. Sci. Technol. B 15, 579–585 (1997)
https://doi.org/10.1116/1.589295
Deposition and atomic force microscopy of individual phthalocyanine polymers between nanofabricated electrodes
J. Vac. Sci. Technol. B 15, 586–589 (1997)
https://doi.org/10.1116/1.589296
Micromechanical thermal sensors: Comparison of experimental results and simulations
J. Vac. Sci. Technol. B 15, 590–596 (1997)
https://doi.org/10.1116/1.589297
Scanning tunneling microscopy imaging and manipulation of DNA oligomer adsorbed on Cu(111) surfaces by a pulse injection method
J. Vac. Sci. Technol. B 15, 602–604 (1997)
https://doi.org/10.1116/1.589299
Surface morphologies associated with thermal desorption: Scanning tunneling microscopy studies of Br–GaAs(110)
J. Vac. Sci. Technol. B 15, 605–609 (1997)
https://doi.org/10.1116/1.589300
Precision transmission electron microscopy sample preparation using a focused ion beam by extraction method
J. Vac. Sci. Technol. B 15, 610–613 (1997)
https://doi.org/10.1116/1.589301
characteristics of modified silicon surface using scanning probe microscopy
J. Vac. Sci. Technol. B 15, 614–617 (1997)
https://doi.org/10.1116/1.589302
Deep level transient spectroscopy study of the damage induced in -type silicon by a gate oxide etching in a plasma
J. Vac. Sci. Technol. B 15, 623–628 (1997)
https://doi.org/10.1116/1.589304
Analyses of the chemical topography of silicon dioxide contact holes etched in a high density plasma source
J. Vac. Sci. Technol. B 15, 629–639 (1997)
https://doi.org/10.1116/1.589305
Highly anisotropic silicon reactive ion etching for nanofabrication using mixtures of gases
J. Vac. Sci. Technol. B 15, 640–645 (1997)
https://doi.org/10.1116/1.589306
Polycide gate etching using a helical resonator on an applied materials precision 5000 platform
J. Vac. Sci. Technol. B 15, 646–651 (1997)
https://doi.org/10.1116/1.589307
High rate reactive ion etch and electron cyclotron resonance etching of GaAs via holes using thick polyimide and photoresist masks
J. Vac. Sci. Technol. B 15, 657–664 (1997)
https://doi.org/10.1116/1.589365
Coverage-dependent etching pathways for Br–GaAs(110)
J. Vac. Sci. Technol. B 15, 670–674 (1997)
https://doi.org/10.1116/1.589367
Effects of graded superlattice on endpoint detection for low damage heterojunction bipolar transistor etching
J. Vac. Sci. Technol. B 15, 681–686 (1997)
https://doi.org/10.1116/1.589369
Defects, surface roughening, and anisotropy on the tensile system
J. Vac. Sci. Technol. B 15, 687–695 (1997)
https://doi.org/10.1116/1.589370
Dependence of current-voltage characteristics on Al mole fraction in GaAs/As asymmetric double barrier structures
J. Vac. Sci. Technol. B 15, 696–701 (1997)
https://doi.org/10.1116/1.589371
Gas source molecular beam epitaxy growth of high quality InGaAsP for 0.98 μm Al-free InGaAs/InGaAsP/InGaP laser diodes
J. Vac. Sci. Technol. B 15, 707–711 (1997)
https://doi.org/10.1116/1.589373
Selective Si and SiGe epitaxial heterostructures grown using an industrial low-pressure chemical vapor deposition module
J. Vac. Sci. Technol. B 15, 712–718 (1997)
https://doi.org/10.1116/1.589374
Material uniformity improvements in a Gen II molecular beam epitaxy system
J. Vac. Sci. Technol. B 15, 719–723 (1997)
https://doi.org/10.1116/1.589375
Development-free vapor laser photolithography with 0.4 μm resolution
J. Vac. Sci. Technol. B 15, 724–728 (1997)
https://doi.org/10.1116/1.589376
Use of interference lithography to pattern arrays of submicron resist structures for field emission flat panel displays
J. Vac. Sci. Technol. B 15, 729–735 (1997)
https://doi.org/10.1116/1.589377
SiC x-ray lithography mask fabricated by electron cyclotron resonance plasma source coupled with divided microwaves
J. Vac. Sci. Technol. B 15, 736–740 (1997)
https://doi.org/10.1116/1.589378
Development of a low permittivity fluorinated copolymer for interlevel dielectric applications
J. Vac. Sci. Technol. B 15, 741–745 (1997)
https://doi.org/10.1116/1.589379
Low dielectric constant film formation by oxygen-radical polymerization of laser-evaporated siloxane
Toshiaki Fujii; Tsuneki Yokoi; Mineo Hiramatsu; Masahito Nawata; Masaru Hori; Toshio Goto; Shuzo Hattori
J. Vac. Sci. Technol. B 15, 746–749 (1997)
https://doi.org/10.1116/1.589380
Electromigration behavior of hot-sputtered Al(Cu) versus chemical vapor deposition W vias
J. Vac. Sci. Technol. B 15, 750–756 (1997)
https://doi.org/10.1116/1.589381
On the electrical deactivation of arsenic in silicon
J. Vac. Sci. Technol. B 15, 757–759 (1997)
https://doi.org/10.1116/1.589382
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
A. S. Stodolna, T. W. Mechielsen, et al.