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Issues
March 1997
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Identification and visualization of questionable regions in atomic force microscope images
J. Vac. Sci. Technol. B 15, 181–185 (1997)
https://doi.org/10.1116/1.589261
Surface process and interaction of Mo clusters on highly oriented pyrolytic graphite observed by scanning tunneling microscopy
J. Vac. Sci. Technol. B 15, 186–191 (1997)
https://doi.org/10.1116/1.589262
Atomic force microscopic observation at initial growth stage of vacuum-deposited thin film of polyvinylidenefluoride
J. Vac. Sci. Technol. B 15, 192–197 (1997)
https://doi.org/10.1116/1.589263
Optical emission spectroscopy of high density metal plasma formed during magnetron sputtering
J. Vac. Sci. Technol. B 15, 202–208 (1997)
https://doi.org/10.1116/1.589265
Effect of annealing temperature on electrical stability of radio frequency magnetron sputtered silicon oxides
J. Vac. Sci. Technol. B 15, 209–213 (1997)
https://doi.org/10.1116/1.589266
Pattern profile control of polysilicon in magnetron reactive ion etching
J. Vac. Sci. Technol. B 15, 221–225 (1997)
https://doi.org/10.1116/1.589268
Thermal anneal activation of near-surface deep level defects in electron cyclotron resonance hydrogen plasma-exposed silicon
J. Vac. Sci. Technol. B 15, 226–231 (1997)
https://doi.org/10.1116/1.589269
Influence of plasma gas and postcleaning on the electrical characteristics of plasma-exposed Schottky diodes
J. Vac. Sci. Technol. B 15, 232–236 (1997)
https://doi.org/10.1116/1.589270
Copper dry etching with precise wafer-temperature control using Cl2 gas as a single reactant
J. Vac. Sci. Technol. B 15, 237–240 (1997)
https://doi.org/10.1116/1.589271
Electrical and structural characterization of low Schottky barrier junctions prepared by co-sputtering
J. Vac. Sci. Technol. B 15, 241–246 (1997)
https://doi.org/10.1116/1.589272
Structural characterization of thin Ni films deposited on (001) ZnSe
Sergei Ruvimov; Zuzanna Liliental-Weber; Edith D. Bourret; Wendy Swider; Jack Washburn; Kristin J. Duxstad; E. E. Haller
J. Vac. Sci. Technol. B 15, 247–251 (1997)
https://doi.org/10.1116/1.589273
Metal–insulator–semiconductor structure on GaAs using a pseudomorphic Si/GaP interlayer
J. Vac. Sci. Technol. B 15, 252–258 (1997)
https://doi.org/10.1116/1.589274
Physical properties and microelectronic applications of low permittivity fluoromethylene cyanate ester resins
J. Vac. Sci. Technol. B 15, 259–266 (1997)
https://doi.org/10.1116/1.589275
Etching and boron diffusion of high aspect ratio Si trenches for released resonators
J. Vac. Sci. Technol. B 15, 267–272 (1997)
https://doi.org/10.1116/1.589276
Lateral range spread of MeV phosphorus ions implanted in silicon measured by time-of-flight secondary ion mass spectrometry
J. Vac. Sci. Technol. B 15, 273–276 (1997)
https://doi.org/10.1116/1.589277
Thermal desorption spectroscopy and molecular beam time-of-flight studies of silicon wafer ultraviolet/ozone cleaning
J. Vac. Sci. Technol. B 15, 277–281 (1997)
https://doi.org/10.1116/1.589278
Spark-gap atomic emission microscopy. II. Improvements in resolution
J. Vac. Sci. Technol. B 15, 282–286 (1997)
https://doi.org/10.1116/1.589279
Generation of diffraction-free beams for applications in optical microlithography
J. Vac. Sci. Technol. B 15, 287–292 (1997)
https://doi.org/10.1116/1.589280
Fabrication and analysis of extreme ultraviolet reflection masks with patterned W/C absorber bilayers
H.-J. Voorma; E. Louis; N. B. Koster; F. Bijkerk; T. Zijlstra; L. E. M. de Groot; B. A. C. Rousseeuw; J. Romijn; E. W. J. M. van der Drift; J. Friedrich
J. Vac. Sci. Technol. B 15, 293–298 (1997)
https://doi.org/10.1116/1.589309
New deep-ultraviolet positive photoresists. II. Copolymers of -trimethylsilylstyrenes and acrylics
J. Vac. Sci. Technol. B 15, 299–305 (1997)
https://doi.org/10.1116/1.589310
Quantitative measurement of the resist heating in a variable shaped electron lithography
J. Vac. Sci. Technol. B 15, 311–315 (1997)
https://doi.org/10.1116/1.589312
Molecular beam epitaxy of highly mismatched on InP for near-infrared photodetectors
J. Vac. Sci. Technol. B 15, 316–320 (1997)
https://doi.org/10.1116/1.589313
InAs room temperature infrared photoconductive detectors grown by molecular-beam epitaxy
J. Vac. Sci. Technol. B 15, 321–324 (1997)
https://doi.org/10.1116/1.589314
Surface decontamination of patterned GaAs substrates for molecular beam epitaxy regrowth using a hydrogen radical source
J. Vac. Sci. Technol. B 15, 325–328 (1997)
https://doi.org/10.1116/1.589315
Substrate temperature measurement by absorption-edge spectroscopy during molecular beam epitaxy of narrow-band gap semiconductor films
J. Vac. Sci. Technol. B 15, 329–336 (1997)
https://doi.org/10.1116/1.589316
Theoretical analysis of field emission from a metal diamond cold cathode emitter
J. Vac. Sci. Technol. B 15, 337–342 (1997)
https://doi.org/10.1116/1.589317
Fabrication of arrayed glassy carbon field emitters
J. Vac. Sci. Technol. B 15, 343–348 (1997)
https://doi.org/10.1116/1.589318
Sensor nanofabrication, performance, and conduction mechanisms in scanning thermal microscopy
J. Vac. Sci. Technol. B 15, 349–360 (1997)
https://doi.org/10.1116/1.589319
Multiparameter grating metrology using optical scatterometry
Christopher J. Raymond; Michael R. Murnane; Steven L. Prins; S. Sohail; H. Naqvi; John R. McNeil; Jimmy W. Hosch
J. Vac. Sci. Technol. B 15, 361–368 (1997)
https://doi.org/10.1116/1.589320
Microtips and resistive sheet: A theoretical description of the emissive properties of this system
J. Vac. Sci. Technol. B 15, 385–390 (1997)
https://doi.org/10.1116/1.589322
Simulation of field emission and electrodynamic characteristics for triode near-cathode modulators with edge field emitter arrays
J. Vac. Sci. Technol. B 15, 391–393 (1997)
https://doi.org/10.1116/1.589323
Numerical modeling of the disk-edge field emitter triode
J. Vac. Sci. Technol. B 15, 394–397 (1997)
https://doi.org/10.1116/1.589324
Hot electron and quasiballistic transport of nonequilibrium electrons in diamond thin films
J. Vac. Sci. Technol. B 15, 398–400 (1997)
https://doi.org/10.1116/1.589325
Effects of vacuum conditions on low frequency noise in silicon field emission devices
J. Vac. Sci. Technol. B 15, 401–404 (1997)
https://doi.org/10.1116/1.589326
Modulation of the current in a field emitter caused by a continuous wave or pulsed laser: Simulations and experimental results
J. Vac. Sci. Technol. B 15, 405–409 (1997)
https://doi.org/10.1116/1.589327
Work function estimate for electrons emitted from nanotube carbon cluster films
Yu. V. Gulyaev; N. I. Sinitsyn; G. V. Torgashov; Sh. T. Mevlyut; A. I. Zhbanov; Yu. F. Zakharchenko; Z. Ya. Kosakovskaya; L. A. Chernozatonskii; O. E. Glukhova; I. G. Torgashov
J. Vac. Sci. Technol. B 15, 422–424 (1997)
https://doi.org/10.1116/1.589329
Fabrication and field emission study of gated diamondlike-carbon-coated silicon tips
J. Vac. Sci. Technol. B 15, 425–427 (1997)
https://doi.org/10.1116/1.589330
Field emission properties of ta-C films with nitrogen doping
Kyu Chang Park; Jong Hyun Moon; Suk Jae Chung; Jae Hoon Jung; Byeong Kwon Ju; Myung Hwan Oh; W. I. Milne; Min Koo Han; Jin Jang
J. Vac. Sci. Technol. B 15, 431–433 (1997)
https://doi.org/10.1116/1.589332
Layered structures with delta-doped layers for enhancement of field emission
J. Vac. Sci. Technol. B 15, 439–441 (1997)
https://doi.org/10.1116/1.589334
Emission characterization of diamond-coated Si field emission arrays
J. Vac. Sci. Technol. B 15, 446–449 (1997)
https://doi.org/10.1116/1.589595
Fabrication of field emission display prototype based on Si field emission arrays with diamond coating
J. Vac. Sci. Technol. B 15, 450–453 (1997)
https://doi.org/10.1116/1.589596
Field emission of nitrogen doped diamondlike carbon films deposited by plasma enhanced chemical vapor deposition
J. Vac. Sci. Technol. B 15, 454–456 (1997)
https://doi.org/10.1116/1.589597
Self-aligned silicon tips coated with diamondlike carbon
J. Vac. Sci. Technol. B 15, 457–459 (1997)
https://doi.org/10.1116/1.589598
Physical characterization of diamond pyramidal microtip emitters
J. Vac. Sci. Technol. B 15, 460–463 (1997)
https://doi.org/10.1116/1.589599
Fabrication and characterization of volcano-shaped field emitters surrounded by planar gates
J. Vac. Sci. Technol. B 15, 464–467 (1997)
https://doi.org/10.1116/1.589600
Fabrication of metal field emitter arrays on polycrystalline silicon
J. Vac. Sci. Technol. B 15, 468–471 (1997)
https://doi.org/10.1116/1.589601
Process design and emission properties of gated polycrystalline silicon field emitter arrays for flat-panel display applications
J. Vac. Sci. Technol. B 15, 472–476 (1997)
https://doi.org/10.1116/1.589602
Anodic bonding technique under low temperature and low voltage using evaporated glass
J. Vac. Sci. Technol. B 15, 477–481 (1997)
https://doi.org/10.1116/1.589603
Surface modification by the voltage pulse in a scanning tunneling microscope
J. Vac. Sci. Technol. B 15, 482–487 (1997)
https://doi.org/10.1116/1.589604
Fully large-scale integration-process-compatible Si field emitter technology with high controllability of emitter height and sharpness
Hisashi Takemura; Naoya Furutake; Miyo Nisimura; Shunji Tsuida; Masayuki Yoshiki; Akihiko Okamoto; Soichiro Miyano
J. Vac. Sci. Technol. B 15, 488–490 (1997)
https://doi.org/10.1116/1.589605
Dual scanning tunneling microscope mode of the surface diffusion metal ion source: Li transfer and scanning
J. Vac. Sci. Technol. B 15, 491–494 (1997)
https://doi.org/10.1116/1.589606
Atom probe determination of the multicomponent material thermo-field microprotrusion parameters
J. Vac. Sci. Technol. B 15, 495–498 (1997)
https://doi.org/10.1116/1.589607
Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique
Seongjin Kim; Byeong Kwon Ju; Yun Hi Lee; Beom Soo Park; Young-Joon Baik; Sungkyoo Lim; Myung Hwan Oh
J. Vac. Sci. Technol. B 15, 499–502 (1997)
https://doi.org/10.1116/1.589608
Experimental study of matrix carbon field-emission cathodes and computer aided design of electron guns for microwave power devices, exploring these cathodes
Y. A. Grigoriev; A. I. Petrosyan; V. V. Penzyakov; V. G. Pimenov; V. I. Rogovin; V. I. Shesterkin; V. P. Kudryashov; V. C. Semyonov
J. Vac. Sci. Technol. B 15, 503–506 (1997)
https://doi.org/10.1116/1.589609
Characterization of novel powder and thin film RGB phosphors for field emission display application
J. Vac. Sci. Technol. B 15, 507–511 (1997)
https://doi.org/10.1116/1.589281
Thin film phosphor prepared by physical vapor deposition for field emission display application
J. Vac. Sci. Technol. B 15, 512–515 (1997)
https://doi.org/10.1116/1.589282
Optical characteristics of the phosphor screen in field-emission environments
J. Vac. Sci. Technol. B 15, 520–523 (1997)
https://doi.org/10.1116/1.589284
Reliability analysis of 4 in. field-emission display
J. M. Kim; J. P. Hong; J. W. Kim; J. H. Choi; N. S. Park; J. H. Kang; J. E. Jang; Y. S. Ryu; H. C. Yang; B. I. Gorfinkel; E. V. Roussina
J. Vac. Sci. Technol. B 15, 528–532 (1997)
https://doi.org/10.1116/1.589286
Distributed generator with extended interaction on field emitter arrays
J. Vac. Sci. Technol. B 15, 533–534 (1997)
https://doi.org/10.1116/1.589287
Characterization of lateral thin-film-edge field emitter arrays
J. Vac. Sci. Technol. B 15, 535–538 (1997)
https://doi.org/10.1116/1.589288
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Science challenges and research opportunities for plasma applications in microelectronics
David B. Graves, Catherine B. Labelle, et al.
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
A. S. Stodolna, T. W. Mechielsen, et al.