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Issues
January 1997
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Novel conductive transparent tip for low-temperature tunneling-electron luminescence microscopy using tip collection
J. Vac. Sci. Technol. B 15, 32–37 (1997)
https://doi.org/10.1116/1.589250
Growth of silicon nitride by scanned probe lithography
J. Vac. Sci. Technol. B 15, 38–39 (1997)
https://doi.org/10.1116/1.589251
Nanoscale selective adsorption of disilane on the Si(111) surface partially terminated by Ga atoms
J. Vac. Sci. Technol. B 15, 40–44 (1997)
https://doi.org/10.1116/1.589252
Single step lithography for double-recessed gate pseudomorphic high electron mobility transistors
J. Vac. Sci. Technol. B 15, 49–52 (1997)
https://doi.org/10.1116/1.589254
Effect of a metallic interfacial layer on peel strength deterioration between a Cu thin film and a polyimide substrate
J. Vac. Sci. Technol. B 15, 53–59 (1997)
https://doi.org/10.1116/1.589255
Copper film formation using electron cyclotron resonance plasma sputtering and reflow method
J. Vac. Sci. Technol. B 15, 60–65 (1997)
https://doi.org/10.1116/1.589256
Effect of plasma polymerization film on reducing damage of reactive ion etched silicon substrates with CHF3+O2 plasmas
J. Vac. Sci. Technol. B 15, 66–69 (1997)
https://doi.org/10.1116/1.589257
On the origin of the notching effect during etching in uniform high density plasmas
J. Vac. Sci. Technol. B 15, 70–87 (1997)
https://doi.org/10.1116/1.589258
Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas
J. Vac. Sci. Technol. B 15, 98–102 (1997)
https://doi.org/10.1116/1.589260
Electrical evaluation of InP surface damage caused by reactive ion etching with a mixture of methane (CH4) or ethane (C2H6) and hydrogen (H2)
J. Vac. Sci. Technol. B 15, 103–108 (1997)
https://doi.org/10.1116/1.589233
Multiwavelength ellipsometry for real-time process control of the plasma etching of patterned samples
J. Vac. Sci. Technol. B 15, 109–115 (1997)
https://doi.org/10.1116/1.589234
Real-time, noninvasive temperature control of wafer processing based on diffusive reflectance spectroscopy
J. Vac. Sci. Technol. B 15, 116–121 (1997)
https://doi.org/10.1116/1.589235
Development of a wafer level technique for monitoring and control of deposition temperature in high-vacuum physical vapor deposition technology
J. Vac. Sci. Technol. B 15, 122–126 (1997)
https://doi.org/10.1116/1.589236
Chemical vapor deposition of TiSi2 using an industrial integrated cluster tool
J. Vac. Sci. Technol. B 15, 133–137 (1997)
https://doi.org/10.1116/1.589238
Selective epitaxial growth of /Si strained-layers in a tubular hot-wall low pressure chemical vapor deposition system
Wei-Chung Wang; John P. Denton; Gerold W. Neudeck; I-Ming Lee; Christos G. Takoudis; Michael T. K. Koh; Eric P. Kvam
J. Vac. Sci. Technol. B 15, 138–141 (1997)
https://doi.org/10.1116/1.589239
Evidence of stress dependence in SiO2/Si3N4 encapsulation-based layer disordering of GaAs/AlGaAs quantum well heterostructures
J. Vac. Sci. Technol. B 15, 142–153 (1997)
https://doi.org/10.1116/1.589240
Fabrication and performance of novel monolithic GaAs/AlGaAs microvacuum transmission-mode photoemitters
J. Vac. Sci. Technol. B 15, 154–158 (1997)
https://doi.org/10.1116/1.589241
Growth, doping, and etching of GaAs and InGaAs using tris-dimethylaminoarsenic
J. Vac. Sci. Technol. B 15, 159–166 (1997)
https://doi.org/10.1116/1.589242
Selective wet etching for highly uniform heterostructure field effect transistors
J. Vac. Sci. Technol. B 15, 167–170 (1997)
https://doi.org/10.1116/1.589243
Highly sensitive analytical method for metallic impurities in the thin silicon layer of silicon-on-insulator wafer
J. Vac. Sci. Technol. B 15, 171–173 (1997)
https://doi.org/10.1116/1.589244
Dual tunneling-unit scanning tunneling microscope for length measurement based on crystalline lattice
J. Vac. Sci. Technol. B 15, 174–177 (1997)
https://doi.org/10.1116/1.589245
Application of poly(methyl methacrylate) ultrathin resist supported by a flowing subphase method in electron-beam fabrication of a 4 in. high-resolution mask
Ning Gu; Feng Qian; Qinyue Hong; Zuhong Lu; Yu Wei; Xiangdong Yu; Li Peng; Zhongyi Zhang; Lixing Zhao; Haiping Zhang; Yong Kuan Liu
J. Vac. Sci. Technol. B 15, 178–179 (1997)
https://doi.org/10.1116/1.589246
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.