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November 1996
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Fabrication of gold nanostructures on a vicinal Si(111) 7×7 surface using ultrahigh vacuum scanning tunneling microscope and a gold‐coated tungsten tip
J. Vac. Sci. Technol. B 14, 3413–3419 (1996)
https://doi.org/10.1116/1.588772
Characterization of large‐area arrays of nanoscale Si tips fabricated using thermal oxidation and wet etching of Si pillars
J. Vac. Sci. Technol. B 14, 3420–3424 (1996)
https://doi.org/10.1116/1.588773
Silicon structures for in situ characterization of atomic force microscope probe geometry
J. Vac. Sci. Technol. B 14, 3425–3430 (1996)
https://doi.org/10.1116/1.588774
Correlation of Raman and optical studies with atomic force microscopy in porous silicon
J. Vac. Sci. Technol. B 14, 3431–3435 (1996)
https://doi.org/10.1116/1.588775
Use of multiple analytical techniques to confirm improved optical modeling of SnO2:F films by atomic force microscopy and spectroscopic ellipsometry
J. Vac. Sci. Technol. B 14, 3436–3444 (1996)
https://doi.org/10.1116/1.588776
Optimal filtering of scanning probe microscope images for wear analysis of smooth surfaces
J. Vac. Sci. Technol. B 14, 3445–3451 (1996)
https://doi.org/10.1116/1.588777
Atomic structures of Ag2Te studied by scanning tunneling microscopy
J. Vac. Sci. Technol. B 14, 3452–3454 (1996)
https://doi.org/10.1116/1.588778
Emission measurements and simulation of silicon field‐emitter arrays with linear planar lenses
Cha‐Mei Tang; T. A. Swyden; K. A. Thomason; L. N. Yadon; D. Temple; C. A. Ball; W. D. Palmer; J. E. Mancusi; D. Vellenga; G. E. McGuire
J. Vac. Sci. Technol. B 14, 3455–3459 (1996)
https://doi.org/10.1116/1.588779
Comparative study of the elastic properties of silicate glass films grown by plasma enhanced chemical vapor deposition
J. Vac. Sci. Technol. B 14, 3460–3464 (1996)
https://doi.org/10.1116/1.588780
Ammonia nitridation of thermal polyoxide to eliminate epitaxial ambient induced dielectric pinhole formation
J. Vac. Sci. Technol. B 14, 3465–3469 (1996)
https://doi.org/10.1116/1.588781
Selective dry etching of oxide films for spacer applications in a high density plasma
J. Vac. Sci. Technol. B 14, 3470–3472 (1996)
https://doi.org/10.1116/1.588782
Electron‐beam/ultraviolet hybrid exposure combined with novel bilayer resist system for a 0.15 μm T‐shaped gate fabrication process
J. Vac. Sci. Technol. B 14, 3483–3488 (1996)
https://doi.org/10.1116/1.588784
Ag2Te/As2S3: A high‐contrast, top‐surface imaging resist for 193 nm lithography
J. Vac. Sci. Technol. B 14, 3489–3491 (1996)
https://doi.org/10.1116/1.588785
Process technology for monolithic high‐speed Schottky/resonant tunneling diode logic integrated circuits
J. Vac. Sci. Technol. B 14, 3497–3501 (1996)
https://doi.org/10.1116/1.588787
Effect of the Ti/TiN bilayer barrier and its surface treatment on the reliability of a Ti/TiN/AlSiCu/TiN contact metallization
J. Vac. Sci. Technol. B 14, 3502–3508 (1996)
https://doi.org/10.1116/1.588788
High stability heterojunction bipolar transistors with carbon‐doped base grown by atomic layer chemical beam epitaxy
J. Vac. Sci. Technol. B 14, 3509–3513 (1996)
https://doi.org/10.1116/1.588789
Electrical and microstructure analysis of ohmic contacts to p‐ and n‐type GaSb, grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 14, 3514–3519 (1996)
https://doi.org/10.1116/1.588790
Thermal stability of W, WSix, and Ti/Al ohmic contacts to InGaN, InN, and InAlN
C. B. Vartuli; S. J. Pearton; C. R. Abernathy; J. D. MacKenzie; R. J. Shul; J. C. Zolper; M. L. Lovejoy; A. G. Baca; M. Hagerott‐Crawford
J. Vac. Sci. Technol. B 14, 3520–3522 (1996)
https://doi.org/10.1116/1.588791
High temperature surface degradation of III–V nitrides
J. Vac. Sci. Technol. B 14, 3523–3531 (1996)
https://doi.org/10.1116/1.588792
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
O. Ambacher; M. S. Brandt; R. Dimitrov; T. Metzger; M. Stutzmann; R. A. Fischer; A. Miehr; A. Bergmaier; G. Dollinger
J. Vac. Sci. Technol. B 14, 3532–3542 (1996)
https://doi.org/10.1116/1.588793
Thermally stable InGaP/GaAs Schottky contacts using low N content double layer WSiN
Kenji Shiojima; Kazumi Nishimura; Masami Tokumitsu; Takumi Nittono; Hirohiko Sugawara; Fumiaki Hyuga
J. Vac. Sci. Technol. B 14, 3543–3549 (1996)
https://doi.org/10.1116/1.588794
Improved cathodoluminescence properties of GaAs/Al0.3Ga0.7As tilted T‐shaped quantum wires fabricated on (111)B facet by glancing‐angle molecular beam epitaxy
N. Tomita; M. Tanaka; T. Saeki; S. Shimomura; S. Hiyamizu; K. Fujita; T. Watanabe; T. Higuchi; N. Sano; A. Adachi
J. Vac. Sci. Technol. B 14, 3550–3554 (1996)
https://doi.org/10.1116/1.588795
Quasiperiodic microfacets on the surface of AlGaAs/GaAs quantum well structures grown by molecular beam epitaxy on (311)A high‐index substrates
S. L. S. Freire; L. A. Cury; F. M. Matinaga; E. C. Valadares; M. V. B. Moreira; A. G. de Oliveira; A. R. Alves; J. M. C. Vilela; M. S. Andrade; T. M. Lima; J. A. Sluss
J. Vac. Sci. Technol. B 14, 3555–3558 (1996)
https://doi.org/10.1116/1.588796
Layer‐by‐layer removal of GaAs(110) by bromine
J. Vac. Sci. Technol. B 14, 3559–3562 (1996)
https://doi.org/10.1116/1.588797
Treatment of InP surfaces in radio frequency H2 and H2/CH4/Ar plasmas: In situ compositional analysis, etch rates, and surface roughness
J. Vac. Sci. Technol. B 14, 3563–3574 (1996)
https://doi.org/10.1116/1.588798
Annihilation of monolayer holes on molecular beam epitaxy grown GaAs surface during annealing as shown by in situ scanning electron microscopy
J. Vac. Sci. Technol. B 14, 3575–3581 (1996)
https://doi.org/10.1116/1.588545
Antimony doped GaAs: A model of dominant current transport mechanism
J. Vac. Sci. Technol. B 14, 3582–3587 (1996)
https://doi.org/10.1116/1.588546
Misfit dislocations in strained InxGa1−xAs heterostructure on patterned GaAs (001) substrate
J. Vac. Sci. Technol. B 14, 3588–3592 (1996)
https://doi.org/10.1116/1.588730
Surface roughness‐induced artifacts in secondary ion mass spectrometry depth profiling and a simple technique to smooth the surface
J. Vac. Sci. Technol. B 14, 3593–3595 (1996)
https://doi.org/10.1116/1.588731
Hydrogen‐induced reconstruction of the GaP(001) surface studied by scanning tunneling microscopy
J. Vac. Sci. Technol. B 14, 3599–3602 (1996)
https://doi.org/10.1116/1.588733
Erratum: Surface reaction of trimethylgallium on GaAs [J. Vac. Sci. Technol. B 14, 136 (1996)]
J. Vac. Sci. Technol. B 14, 3604 (1996)
https://doi.org/10.1116/1.588735
Persistence pays off: Sir Charles Oatley and the scanning electron microscope
J. Vac. Sci. Technol. B 14, 3620–3624 (1996)
https://doi.org/10.1116/1.588737
Application of scanning probe methods for electronic and magnetic device fabrication, characterization, and testing
J. Vac. Sci. Technol. B 14, 3625–3631 (1996)
https://doi.org/10.1116/1.588738
Low‐energy ion damage in semiconductors: A progress report
J. Vac. Sci. Technol. B 14, 3632–3636 (1996)
https://doi.org/10.1116/1.588739
Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures
J. W. Lee; C. B. Vartuli; C. R. Abernathy; J. D. MacKenzie; J. R. Mileham; S. J. Pearton; R. J. Shul; J. C. Zolper; M. Hagerott‐Crawford; J. M. Zavada; R. G. Wilson; R. N. Schwartz
J. Vac. Sci. Technol. B 14, 3637–3640 (1996)
https://doi.org/10.1116/1.588740
Quantum dots fabricated in InP/InGaAs by free Cl2 gas etching and metalorganic chemical vapor deposition regrowth
R. Panepucci; E. Reuter; P. Fay; C. Youtsey; J. Kluender; C. Caneau; J. J. Coleman; S. G. Bishop; I. Adesida
J. Vac. Sci. Technol. B 14, 3641–3645 (1996)
https://doi.org/10.1116/1.588741
Reduced nonradiative recombination in etched/regrown AlGaAs/GaAs structures fabricated by in situ processing
J. Vac. Sci. Technol. B 14, 3646–3649 (1996)
https://doi.org/10.1116/1.588742
Etch‐mask of pyrolytic‐photoresist thin‐film for self‐aligned fabrication of smooth and deep faceted three‐dimensional microstructures
G. A. Porkolab; Shih‐Hsiang Hsu; John V. Hryniewicz; Wenhua Lin; Y. J. Chen; Sambhu Agarwala; F. G. Johnson; Oliver King; M. Dagenais; D. R. Stone
J. Vac. Sci. Technol. B 14, 3650–3653 (1996)
https://doi.org/10.1116/1.588743
Photoluminescence blueshift induced by reactive ion etching of strained CdZnSe/ZnSe quantum well structures
L. M. Sparing; P. D. Wang; S. H. Xin; S. W. Short; S. S. Shi; J. K. Furdyna; J. L. Merz; G. L. Snider
J. Vac. Sci. Technol. B 14, 3654–3657 (1996)
https://doi.org/10.1116/1.588744
Dry etching damage in III–V semiconductors
J. Vac. Sci. Technol. B 14, 3658–3662 (1996)
https://doi.org/10.1116/1.588745
Effects of etch‐induced damage on the electrical characteristics of in‐plane gated quantum wire transistors
J. Vac. Sci. Technol. B 14, 3663–3667 (1996)
https://doi.org/10.1116/1.588746
Investigation of improved regrown material on InP surfaces etched with methane/hydrogen/argon
J. Vac. Sci. Technol. B 14, 3674–3678 (1996)
https://doi.org/10.1116/1.588748
Reactive ion etch‐induced effects on 0.2 μm T‐gate In0.52Al0.48As/In0.53Ga0.47As/InP high electron mobility transistors
J. Vac. Sci. Technol. B 14, 3679–3683 (1996)
https://doi.org/10.1116/1.588749
Photoluminescence studies on radiation enhanced diffusion of dry‐etch damage in GaAs and InP materials
J. Vac. Sci. Technol. B 14, 3684–3687 (1996)
https://doi.org/10.1116/1.588750
Suppression of electron shading effect by a counter radio frequency bias in plasma etching
J. Vac. Sci. Technol. B 14, 3688–3691 (1996)
https://doi.org/10.1116/1.588648
Fabrication of micromechanical switches for routing radio frequency signals
J. Vac. Sci. Technol. B 14, 3692–3696 (1996)
https://doi.org/10.1116/1.588649
Sharpening Si field emitter tips by dry etching and low temperature plasma oxidation
J. Vac. Sci. Technol. B 14, 3697–3701 (1996)
https://doi.org/10.1116/1.588650
Precision optical aspheres for extreme ultraviolet lithography
D. R. Kania; D. P. Gaines; D. S. Sweeney; G. E. Sommargren; B. La Fontaine; S. P. Vernon; D. A. Tichenor; J. E. Bjorkholm; F. Zernike; R. N. Kestner
J. Vac. Sci. Technol. B 14, 3706–3708 (1996)
https://doi.org/10.1116/1.588652
Effects of compaction on 193 nm lithographic system performance
J. Vac. Sci. Technol. B 14, 3709–3713 (1996)
https://doi.org/10.1116/1.588653
Attenuated phase shift mask materials for 248 and 193 nm lithography
J. Vac. Sci. Technol. B 14, 3719–3723 (1996)
https://doi.org/10.1116/1.588655
General aspheric refractive micro‐optics fabricated by optical lithography using a high energy beam sensitive glass gray‐level mask
J. Vac. Sci. Technol. B 14, 3730–3733 (1996)
https://doi.org/10.1116/1.588657
Simulation of light propagation in optical linear and nonlinear resist layers by finite difference beam propagation and other methods
J. Vac. Sci. Technol. B 14, 3734–3737 (1996)
https://doi.org/10.1116/1.588658
Micro‐objective lens with compact secondary electron detector for miniature low voltage electron beam systems
J. Vac. Sci. Technol. B 14, 3738–3741 (1996)
https://doi.org/10.1116/1.588659
Triangular‐variable‐shaped beams using the cell projection method
J. Vac. Sci. Technol. B 14, 3742–3746 (1996)
https://doi.org/10.1116/1.588660
Combined calculation of lens aberrations, space charge aberrations, and statistical Coulomb effects in charged particle optical columns
J. Vac. Sci. Technol. B 14, 3747–3752 (1996)
https://doi.org/10.1116/1.588661
Optical design of a combined ion and electron beam system for nanotechnology
J. Vac. Sci. Technol. B 14, 3753–3758 (1996)
https://doi.org/10.1116/1.588662
Fundamental limits to imaging resolution for focused ion beams
J. Vac. Sci. Technol. B 14, 3759–3763 (1996)
https://doi.org/10.1116/1.588663
Ultralow voltage imaging
J. Vac. Sci. Technol. B 14, 3770–3773 (1996)
https://doi.org/10.1116/1.588665
Electron‐beam microcolumns for lithography and related applications
T. H. P. Chang; M. G. R. Thomson; E. Kratschmer; H. S. Kim; M. L. Yu; K. Y. Lee; S. A. Rishton; B. W. Hussey; S. Zolgharnain
J. Vac. Sci. Technol. B 14, 3774–3781 (1996)
https://doi.org/10.1116/1.588666
Semiconductor on glass photocathodes as high‐performance sources for parallel electron beam lithography
J. E. Schneider; A. W. Baum; G. I. Winograd; R. F. W. Pease; M. McCord; W. E. Spicer; K. A. Costello; V. W. Aebi
J. Vac. Sci. Technol. B 14, 3782–3786 (1996)
https://doi.org/10.1116/1.588667
Titanium nitride coated tungsten cold field emission sources
J. Vac. Sci. Technol. B 14, 3787–3791 (1996)
https://doi.org/10.1116/1.588668
Experimental evaluation of a 20×20 mm footprint microcolumn
E. Kratschmer; H. S. Kim; M. G. R. Thomson; K. Y. Lee; S. A. Rishton; M. L. Yu; S. Zolgharnain; B. W. Hussey; T. H. P. Chang
J. Vac. Sci. Technol. B 14, 3792–3796 (1996)
https://doi.org/10.1116/1.588669
Energy distributions of field emitted electrons from carbide tips and tungsten tips with diamondlike carbon coatings
J. Vac. Sci. Technol. B 14, 3797–3801 (1996)
https://doi.org/10.1116/1.588670
The electrostatic moving objective lens and optimized deflection systems for microcolumns
J. Vac. Sci. Technol. B 14, 3802–3807 (1996)
https://doi.org/10.1116/1.588671
Initial images with a partially micromachined scanning electron microscope
J. Vac. Sci. Technol. B 14, 3808–3812 (1996)
https://doi.org/10.1116/1.588672
Multielectron beam blanking aperture array system SYNAPSE‐2000
Hiroshi Yasuda; Soichiro Arai; Jun‐ichi Kai; Yoshihisa Ooae; Tomohiko Abe; Shigeru Maruyama; Takashi Kiuchi
J. Vac. Sci. Technol. B 14, 3813–3820 (1996)
https://doi.org/10.1116/1.588673
Characterization and application of a low‐profile metal–semiconductor–metal detector for low energy backscattered electrons
J. Vac. Sci. Technol. B 14, 3821–3824 (1996)
https://doi.org/10.1116/1.588674
Preliminary results from a prototype projection electron‐beam stepper‐scattering with angular limitation projection electron beam lithography proof‐of‐concept system
L. R. Harriott; S. D. Berger; C. Biddick; M. I. Blakey; S. W. Bowler; K. Brady; R. M. Camarda; W. F. Connelly; A. Crorken; J. Custy; R. Dimarco; R. C. Farrow; J. A. Felker; L. Fetter; R. Freeman; L. Hopkins; H. A. Huggins; C. S. Knurek; J. S. Kraus; J. A. Liddle; M. Mkrtychan; A. E. Novembre; M. L. Peabody; R. G. Tarascon; H. H. Wade; W. K. Waskiewicz; G. P. Watson; K. S. Werder; D. Windt
J. Vac. Sci. Technol. B 14, 3825–3828 (1996)
https://doi.org/10.1116/1.588675
High resolution electron beam lithography using ZEP‐520 and KRS resists at low voltage
D. M. Tanenbaum; C. W. Lo; M. Isaacson; H. G. Craighead; M. J. Rooks; K. Y. Lee; W. S. Huang; T. H. P. Chang
J. Vac. Sci. Technol. B 14, 3829–3833 (1996)
https://doi.org/10.1116/1.588676
Electron beam induced damage of silicon germanium
Douglas J. Paul; Joseph M. Ryan; Michael Pepper; Alec N. Broers; Terry E. Whall; Juan M. Fernández; Bruce A. Joyce
J. Vac. Sci. Technol. B 14, 3834–3838 (1996)
https://doi.org/10.1116/1.588677
Theory of beam‐induced substrate heating
J. Vac. Sci. Technol. B 14, 3839–3844 (1996)
https://doi.org/10.1116/1.588678
Electron scattering by electron‐beam mask with tapered aperture in cell projection lithography
J. Vac. Sci. Technol. B 14, 3845–3849 (1996)
https://doi.org/10.1116/1.588679
Modified mask methods for pattern accuracy enhancement in electron beam lithography
J. Vac. Sci. Technol. B 14, 3850–3854 (1996)
https://doi.org/10.1116/1.588680
One step electron‐beam lithography for multipurpose diffractive optical elements with 200 nm resolution
J. Vac. Sci. Technol. B 14, 3855–3859 (1996)
https://doi.org/10.1116/1.588681
Three‐dimensional electron‐beam lithography using an all‐dry resist process
J. Vac. Sci. Technol. B 14, 3860–3863 (1996)
https://doi.org/10.1116/1.588682
Modeling of electron elastic and inelastic scattering
J. Vac. Sci. Technol. B 14, 3864–3869 (1996)
https://doi.org/10.1116/1.588683
Studies on correction accuracy of proximity effect for the pattern area density method in electron beam direct writing
J. Vac. Sci. Technol. B 14, 3870–3873 (1996)
https://doi.org/10.1116/1.588684
Region‐wise proximity effect correction for heterogeneous substrates in electron‐beam lithography: Shape modification
J. Vac. Sci. Technol. B 14, 3874–3879 (1996)
https://doi.org/10.1116/1.588685
Feature contrast in dose‐equalization schemes used for electron‐beam proximity control
J. Vac. Sci. Technol. B 14, 3880–3886 (1996)
https://doi.org/10.1116/1.588686
Electron‐beam‐induced deposition of copper compound with low resistivity
J. Vac. Sci. Technol. B 14, 3887–3891 (1996)
https://doi.org/10.1116/1.588687
Divot defect repair on a deep ultraviolet SiNx halftone mask
J. Vac. Sci. Technol. B 14, 3892–3895 (1996)
https://doi.org/10.1116/1.588688
A proximity ion beam lithography process for high density nanostructures
John C. Wolfe; Sandeep V. Pendharkar; Paul Ruchhoeft; Sudipto Sen; Mark D. Morgan; W. E. Horne; R. C. Tiberio; John N. Randall
J. Vac. Sci. Technol. B 14, 3896–3899 (1996)
https://doi.org/10.1116/1.588689
Stencil mask temperature measurement and control during ion irradiation
J. Vac. Sci. Technol. B 14, 3900–3902 (1996)
https://doi.org/10.1116/1.588690
Application of optical filters fabricated by masked ion beam lithography
J. Vac. Sci. Technol. B 14, 3903–3906 (1996)
https://doi.org/10.1116/1.588691
High‐brightness ion source for ion projection lithography
J. Vac. Sci. Technol. B 14, 3907–3910 (1996)
https://doi.org/10.1116/1.588692
Energy spread in liquid metal ion sources at low currents
J. Vac. Sci. Technol. B 14, 3911–3915 (1996)
https://doi.org/10.1116/1.588693
Sub‐100 nm focused ion beam lithography using ladder silicone spin‐on glass
J. Vac. Sci. Technol. B 14, 3916–3919 (1996)
https://doi.org/10.1116/1.588694
Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) deposition
J. Vac. Sci. Technol. B 14, 3920–3923 (1996)
https://doi.org/10.1116/1.588695
HPR 506 photoresist used as a positive tone ion resist
J. Vac. Sci. Technol. B 14, 3924–3927 (1996)
https://doi.org/10.1116/1.588696
Development of focused ion‐beam machining techniques for Permalloy structures
J. Vac. Sci. Technol. B 14, 3928–3932 (1996)
https://doi.org/10.1116/1.588697
Use of very low energy in situ focused ion beams for three‐dimensional dopant patterning during molecular beam epitaxial growth
P. J. A. Sazio; J. H. Thompson; G. A. C. Jones; E. H. Linfield; D. A. Ritchie; M. Houlton; G. W. Smith
J. Vac. Sci. Technol. B 14, 3933–3937 (1996)
https://doi.org/10.1116/1.588698
Fabrication of laterally selected Si doped layer in GaAs using a low‐energy focused ion beam/molecular beam epitaxy combined system
J. Vac. Sci. Technol. B 14, 3938–3941 (1996)
https://doi.org/10.1116/1.588699
Focused ion beam biased repair of conventional and phase shift masks
J. Vac. Sci. Technol. B 14, 3942–3946 (1996)
https://doi.org/10.1116/1.588700
Development of ion sources for ion projection lithography
Y. Lee; R. A. Gough; W. B. Kunkel; K. N. Leung; L. T. Perkins; D. S. Pickard; L. Sun; J. Vujic; M. D. Williams
J. Vac. Sci. Technol. B 14, 3947–3950 (1996)
https://doi.org/10.1116/1.588701
Atmospheric metrology using the air turbulence compensated interferometer
J. Vac. Sci. Technol. B 14, 3955–3959 (1996)
https://doi.org/10.1116/1.588622
Absolute distance measurement interferometry for alignment systems for advanced lithography tools
J. Vac. Sci. Technol. B 14, 3960–3963 (1996)
https://doi.org/10.1116/1.588623
Initial results from an extreme ultraviolet interferometer operating with a compact laser plasma source
A. K. Ray‐Chaudhuri; K. D. Krenz; R. P. Nissen; S. J. Haney; C. H. Fields; W. C. Sweatt; A. A. MacDowell
J. Vac. Sci. Technol. B 14, 3964–3968 (1996)
https://doi.org/10.1116/1.588624
Simultaneous measurement of gap and superposition in a precision aligner for x‐ray nanolithography
J. Vac. Sci. Technol. B 14, 3969–3973 (1996)
https://doi.org/10.1116/1.588625
Latent image formation: Nanoscale topography and calorimetric measurements in chemically amplified resists
J. Vac. Sci. Technol. B 14, 3974–3979 (1996)
https://doi.org/10.1116/1.588626
Patterning accuracy estimation during stage acceleration in the electron beam direct writing system EX‐8D
K. Hattori; S. Magoshi; A. Ando; S. Satoh; H. Sunaoshi; M. Suenaga; H. Housai; S. Hashimoto; H. Wada; K. Sugihara
J. Vac. Sci. Technol. B 14, 3985–3989 (1996)
https://doi.org/10.1116/1.588628
Characterization of resist profiles using water enhanced focused ion beam micromachining
J. Vac. Sci. Technol. B 14, 3990–3995 (1996)
https://doi.org/10.1116/1.588629
Investigations on the topology of structures milled and etched by focused ion beams
J. Vac. Sci. Technol. B 14, 3996–3999 (1996)
https://doi.org/10.1116/1.588630
Direct aerial image measurements to evaluate the performance of an extreme ultraviolet projection lithography system
J. Vac. Sci. Technol. B 14, 4000–4003 (1996)
https://doi.org/10.1116/1.588631
Atomic force microscopy for cross section inspection and metrology
J. Vac. Sci. Technol. B 14, 4004–4008 (1996)
https://doi.org/10.1116/1.588632
Effects of electron‐beam parameters on critical‐dimension measurements
J. Vac. Sci. Technol. B 14, 4014–4019 (1996)
https://doi.org/10.1116/1.588634
Fabrication of back‐gated complementary metal‐oxide semiconductor devices using mixed and matched optical and x‐ray lithographies
J. Vac. Sci. Technol. B 14, 4024–4028 (1996)
https://doi.org/10.1116/1.588636
A new high‐performance surface‐micromachined tunneling accelerometer fabricated using nanolithography
J. Vac. Sci. Technol. B 14, 4029–4033 (1996)
https://doi.org/10.1116/1.588637
Metal based single electron transistors operating at several Kelvin
J. Vac. Sci. Technol. B 14, 4034–4037 (1996)
https://doi.org/10.1116/1.588638
Fabrication of lateral resonant tunneling devices with heterostructure barriers
J. Vac. Sci. Technol. B 14, 4038–4041 (1996)
https://doi.org/10.1116/1.588639
A triangle‐shaped nanoscale metal–oxide–semiconductor device
J. Vac. Sci. Technol. B 14, 4042–4045 (1996)
https://doi.org/10.1116/1.588640
Charge detector realization for AlGaAs/GaAs quantum‐dot cellular automata
J. Vac. Sci. Technol. B 14, 4046–4050 (1996)
https://doi.org/10.1116/1.588641
Fabrication and performance of thin amorphous Si subwavelength transmission grating for controlling vertical cavity surface emitting laser polarization
J. Vac. Sci. Technol. B 14, 4055–4057 (1996)
https://doi.org/10.1116/1.588643
Fabrication and investigation of nanostructures and their application in new laser devices
J. Vac. Sci. Technol. B 14, 4058–4061 (1996)
https://doi.org/10.1116/1.588644
Fabrication of quantum nanostructures for the measurement of thermoelectric phenomena
J. Vac. Sci. Technol. B 14, 4062–4067 (1996)
https://doi.org/10.1116/1.588645
Fabrication of Si double barrier structure
J. Vac. Sci. Technol. B 14, 4068–4071 (1996)
https://doi.org/10.1116/1.588646
Limit of resolution of a standing wave atom optical lens
J. Vac. Sci. Technol. B 14, 4072–4075 (1996)
https://doi.org/10.1116/1.588647
Fabrication of a refractive microlens integrated onto the monomode fiber
J. Vac. Sci. Technol. B 14, 4076–4079 (1996)
https://doi.org/10.1116/1.588594
Controlling sidewall smoothness for micromachined Si mirrors and lenses
J. Vac. Sci. Technol. B 14, 4080–4084 (1996)
https://doi.org/10.1116/1.588595
High‐resolution silicon patterning with self‐assembled monolayer resists
J. Vac. Sci. Technol. B 14, 4085–4090 (1996)
https://doi.org/10.1116/1.588596
Fabrication of InP‐based wavelength division multiplexing arrayed waveguide filters using chemically assisted ion beam etching
C. Youtsey; I. Adesida; J. B. D. Soole; M. R. Amersfoort; H. P. LeBlanc; N. C. Andreadakis; A. Rajhel; C. Caneau; M. A. Koza; R. Bhat
J. Vac. Sci. Technol. B 14, 4091–4095 (1996)
https://doi.org/10.1116/1.588597
Fabrication of subwavelength, binary, antireflection surface‐relief structures in the near infrared
J. Vac. Sci. Technol. B 14, 4096–4099 (1996)
https://doi.org/10.1116/1.588598
Combined method of electron‐beam lithography and ion implantation techniques for the fabrication of high‐temperature superconductor Josephson junctions
J. Vac. Sci. Technol. B 14, 4100–4104 (1996)
https://doi.org/10.1116/1.588599
Conductive dots, wires, and supertips for field electron emitters produced by electron‐beam induced deposition on samples having increased temperature
J. Vac. Sci. Technol. B 14, 4105–4109 (1996)
https://doi.org/10.1116/1.588600
Lithographic band gap tuning in photonic band gap crystals
J. Vac. Sci. Technol. B 14, 4110–4114 (1996)
https://doi.org/10.1116/1.588601
Reliable fabrication of sub‐40 nm period gratings using a nanolithography system with interferometric dynamic focus control
J. Vac. Sci. Technol. B 14, 4115–4118 (1996)
https://doi.org/10.1116/1.588602
Dry etching of horizontal distributed Bragg reflector mirrors for waveguide lasers
J. Vac. Sci. Technol. B 14, 4119–4123 (1996)
https://doi.org/10.1116/1.588603
Mold‐assisted nanolithography: A process for reliable pattern replication
J. Vac. Sci. Technol. B 14, 4124–4128 (1996)
https://doi.org/10.1116/1.588604
Nanoimprint lithography
J. Vac. Sci. Technol. B 14, 4129–4133 (1996)
https://doi.org/10.1116/1.588605
Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self‐organization processes
J. Vac. Sci. Technol. B 14, 4134–4139 (1996)
https://doi.org/10.1116/1.588606
Nanoscale patterning of an organosilane monolayer on the basis of tip‐induced electrochemistry in atomic force microscopy
J. Vac. Sci. Technol. B 14, 4140–4143 (1996)
https://doi.org/10.1116/1.588607
The nanoscilloscope: Combined topography and AC field probing with a micromachined tip
J. Vac. Sci. Technol. B 14, 4144–4147 (1996)
https://doi.org/10.1116/1.588608
Three dimensional electron optical modeling of scanning tunneling microscope lithography in resists
J. Vac. Sci. Technol. B 14, 4148–4152 (1996)
https://doi.org/10.1116/1.588609
Silicon metal‐oxide‐semiconductor field‐effect transistor with gate structures defined by scanned probe lithography
J. Vac. Sci. Technol. B 14, 4153–4156 (1996)
https://doi.org/10.1116/1.588610
How practical is 193 nm lithography?
M. Rothschild; J. A. Burns; S. G. Cann; A. R. Forte; C. L. Keast; R. R. Kunz; S. C. Palmateer; J. H. C. Sedlacek; R. Uttaro; A. Grenville; D. Corliss
J. Vac. Sci. Technol. B 14, 4157–4161 (1996)
https://doi.org/10.1116/1.588611
Can synthetic aperture techniques be applied to optical lithography?
J. Vac. Sci. Technol. B 14, 4162–4166 (1996)
https://doi.org/10.1116/1.588612
Large‐area achromatic interferometric lithography for 100 nm period gratings and grids
J. Vac. Sci. Technol. B 14, 4167–4170 (1996)
https://doi.org/10.1116/1.588613
Experimental and simulated estimation of new super resolution technique
J. Vac. Sci. Technol. B 14, 4171–4174 (1996)
https://doi.org/10.1116/1.588614
Characterization and correction of optical proximity effects in deep‐ultraviolet lithography using behavior modeling
Anthony Yen; Alexander Tritchkov; John P. Stirniman; Geert Vandenberghe; Rik Jonckheere; Kurt Ronse; Luc Van den hove
J. Vac. Sci. Technol. B 14, 4175–4178 (1996)
https://doi.org/10.1116/1.588615
Application of optical lithography for high aspect ratio microstructures
J. Vac. Sci. Technol. B 14, 4179–4183 (1996)
https://doi.org/10.1116/1.588616
Calorimetric measurements of optical materials for 193 nm lithography
J. Vac. Sci. Technol. B 14, 4184–4187 (1996)
https://doi.org/10.1116/1.588617
Fabrication of metal–oxide–semiconductor devices with extreme ultraviolet lithography
K. B. Nguyen; G. F. Cardinale; D. A. Tichenor; G. D. Kubiak; K. Berger; A. K. Ray‐Chaudhuri; Y. Perras; S. J. Haney; R. Nissen; K. Krenz; R. H. Stulen; H. Fujioka; C. Hu; J. Bokor; D. M. Tennant; L. A. Fetter
J. Vac. Sci. Technol. B 14, 4188–4192 (1996)
https://doi.org/10.1116/1.588618
Study on elliptical polarization illumination effects for microlithography
J. Vac. Sci. Technol. B 14, 4193–4198 (1996)
https://doi.org/10.1116/1.588619
Passivate SiNx halftone phase shifting mask for deep ultraviolet exposure
J. Vac. Sci. Technol. B 14, 4199–4202 (1996)
https://doi.org/10.1116/1.588620
Prospect and challenges of ArF excimer laser lithography processes and materials
J. Vac. Sci. Technol. B 14, 4203–4206 (1996)
https://doi.org/10.1116/1.588575
Plasma‐deposited silylation resist for 193 nm lithography
J. Vac. Sci. Technol. B 14, 4207–4211 (1996)
https://doi.org/10.1116/1.588576
ArF surface modification resist process with enhanced water sorption ability
J. Vac. Sci. Technol. B 14, 4212–4215 (1996)
https://doi.org/10.1116/1.588577
Acid‐diffusion suppression in chemical amplification resists by controlling acid‐diffusion channels in base matrix polymers
J. Vac. Sci. Technol. B 14, 4216–4220 (1996)
https://doi.org/10.1116/1.588578
Diagnostics of patterning mechanisms in chemically amplified resists from bake dependencies of images
J. Vac. Sci. Technol. B 14, 4221–4225 (1996)
https://doi.org/10.1116/1.588579
A study of acid diffusion in chemically amplified deep ultraviolet resist
Toshiro Itani; Hiroshi Yoshino; Shuichi Hashimoto; Mitsuharu Yamana; Norihiko Samoto; Kunihiko Kasama
J. Vac. Sci. Technol. B 14, 4226–4228 (1996)
https://doi.org/10.1116/1.588580
A multilayer inorganic antireflective system for use in 248 nm deep ultraviolet lithography
J. Vac. Sci. Technol. B 14, 4229–4233 (1996)
https://doi.org/10.1116/1.588581
Effect of gaseous permeability of overcoat layer on KrF chemically amplified positive resists
J. Vac. Sci. Technol. B 14, 4234–4238 (1996)
https://doi.org/10.1116/1.588582
Resist application effects on chemically amplified resist response
Paul M. Dentinger; Carla M. Nelson; Steven J. Rhyner; James W. Taylor; Theodore H. Fedynyshyn; Michael F. Cronin
J. Vac. Sci. Technol. B 14, 4239–4245 (1996)
https://doi.org/10.1116/1.588583
Impact of reduced resist thickness on deep ultraviolet lithography
J. Vac. Sci. Technol. B 14, 4246–4251 (1996)
https://doi.org/10.1116/1.588584
Application of a reaction‐diffusion model for negative chemically amplified resists to determine electron‐beam proximity correction parameters
J. Vac. Sci. Technol. B 14, 4252–4256 (1996)
https://doi.org/10.1116/1.588585
Negative resist corner rounding. Envelope volume modeling
J. Vac. Sci. Technol. B 14, 4257–4261 (1996)
https://doi.org/10.1116/1.588586