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May 1996

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Noncontact scanning force microscopy using a direct‐oscillating piezoelectric microcantilever

T. Itoh; T. Ohashi; T. Suga

J. Vac. Sci. Technol. B 14, 1577–1581 (1996) https://doi.org/10.1116/1.589193

Abstract

View articletitled, Noncontact scanning force microscopy using a direct‐oscillating piezoelectric microcantilever

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Combined surface plasmon resonance and scanning force microscope instrument

X. Chen; M. C. Davies; C. J. Roberts; K. M. Shakesheff; S. J. B. Tendler; P. M. Williams; J. Davies

J. Vac. Sci. Technol. B 14, 1582–1586 (1996) https://doi.org/10.1116/1.589194

Abstract

View articletitled, Combined surface plasmon resonance and scanning force microscope instrument

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Atomic species identification in scanning tunneling microscopy by time‐of‐flight spectroscopy

J. C. H. Spence; U. Weierstall; W. Lo

J. Vac. Sci. Technol. B 14, 1587–1590 (1996) https://doi.org/10.1116/1.589195

Abstract

View articletitled, Atomic species identification in scanning tunneling microscopy by time‐of‐flight spectroscopy

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Shallow ripples with giant wavelengths observed by atomic force microscopy: Real effects and the report of a new artifact

Zhenxi Dai; Minsun Yoo; Alex de Lozanne

J. Vac. Sci. Technol. B 14, 1591–1595 (1996) https://doi.org/10.1116/1.589196

Abstract

View articletitled, Shallow ripples with giant wavelengths observed by atomic force microscopy: Real effects and the report of a new artifact

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C₆₀ manipulation and cluster formation using a scanning tunneling microscope

A. W. Dunn; P. H. Beton; P. Moriarty

J. Vac. Sci. Technol. B 14, 1596–1599 (1996) https://doi.org/10.1116/1.589197

Abstract

View articletitled, C60 manipulation and cluster formation using a scanning tunneling microscope

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Scanning force microscopy study of the surface topography of thin BaTiO₃ films deposited by pulsed laser ablation

J. Zhang; M. Szabadi; P. Hess

J. Vac. Sci. Technol. B 14, 1600–1606 (1996) https://doi.org/10.1116/1.589198

Abstract

View articletitled, Scanning force microscopy study of the surface topography of thin BaTiO3 films deposited by pulsed laser ablation

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Cross‐sectional scanning tunneling spectroscopy of cleaved, silicon‐based metal–oxide–semiconductor junctions

Paul M. Thibado; T. W. Mercer; Shelton Fu; Takeshi Egami; N. J. DiNardo; Dawn A. Bonnell

J. Vac. Sci. Technol. B 14, 1607–1610 (1996) https://doi.org/10.1116/1.589199

Abstract

View articletitled, Cross‐sectional scanning tunneling spectroscopy of cleaved, silicon‐based metal–oxide–semiconductor junctions

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Surface structures of thermoplastic and thermoset films after modification by graft copolymerization: Comparative study by x‐ray photoelectron spectroscopy and atomic force microscopy

F. C. Loh; K. L. Tan; E. T. Kang; S. F. Y. Li

J. Vac. Sci. Technol. B 14, 1611–1620 (1996) https://doi.org/10.1116/1.589200

Abstract

View articletitled, Surface structures of thermoplastic and thermoset films after modification by graft copolymerization: Comparative study by x‐ray photoelectron spectroscopy and atomic force microscopy

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In situ observation of the tip shape of Co–Ge liquid alloy ion sources in a high‐voltage transmission electron microscope

W. Driesel; Ch. Dietzsch; E. Hesse; L. Bischoff; J. Teichert

J. Vac. Sci. Technol. B 14, 1621–1629 (1996) https://doi.org/10.1116/1.589201

Abstract

View articletitled, In situ observation of the tip shape of Co–Ge liquid alloy ion sources in a high‐voltage transmission electron microscope

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Application of time‐resolved scanning electron microscopy to the analysis of the motion of micromechanical structures

I. Ogo; N. C. MacDonald

J. Vac. Sci. Technol. B 14, 1630–1634 (1996) https://doi.org/10.1116/1.589202

Abstract

View articletitled, Application of time‐resolved scanning electron microscopy to the analysis of the motion of micromechanical structures

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Influence of Coulomb interactions on choice of magnification, aperture size, and source brightness in a two lens focused ion beam column

P. Kruit; X. R. Jiang

J. Vac. Sci. Technol. B 14, 1635–1641 (1996) https://doi.org/10.1116/1.589203

Abstract

View articletitled, Influence of Coulomb interactions on choice of magnification, aperture size, and source brightness in a two lens focused ion beam column

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Nanometer‐scale lithography on Si(001) using adsorbed H as an atomic layer resist

D. P. Adams; T. M. Mayer; B. S. Swartzentruber

J. Vac. Sci. Technol. B 14, 1642–1649 (1996) https://doi.org/10.1116/1.589204

Abstract

View articletitled, Nanometer‐scale lithography on Si(001) using adsorbed H as an atomic layer resist

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Examination of Ge/Si and GeSi/Si surface nanostructures using transmission electron microscopy and focused ion beam assisted processing

C. Deng; T. W. Sigmon; J. M. McCarthy

J. Vac. Sci. Technol. B 14, 1650–1654 (1996) https://doi.org/10.1116/1.589205

Abstract

View articletitled, Examination of Ge/Si and GeSi/Si surface nanostructures using transmission electron microscopy and focused ion beam assisted processing

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Morphology of thin Sb layers grown on Si(111)7×7 at room temperature

M. T. Cuberes; H. Ascolani; M. Moreno; J. L. Sacedón

J. Vac. Sci. Technol. B 14, 1655–1659 (1996) https://doi.org/10.1116/1.589206

Abstract

View articletitled, Morphology of thin Sb layers grown on Si(111)7×7 at room temperature

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Epitaxial growth of Si_1−x−yGe_xC_y alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane

Jian Mi; Patricia Warren; Marc Gailhanou; Jean‐Daniel Ganière; Michel Dutoit; Pierre‐Henri Jouneau; Raymond Houriet

J. Vac. Sci. Technol. B 14, 1660–1669 (1996) https://doi.org/10.1116/1.589207

Abstract

View articletitled, Epitaxial growth of Si1−x−yGexCy alloy layers on (100) Si by rapid thermal chemical vapor deposition using methylsilane

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Buried‐gate oxide thinning during epitaxial lateral overgrowth for dual‐gated metal–oxide–semiconductor field‐effect transistors

Josef S. Watts; Gerold W. Neudeck

J. Vac. Sci. Technol. B 14, 1670–1674 (1996) https://doi.org/10.1116/1.589208

Abstract

View articletitled, Buried‐gate oxide thinning during epitaxial lateral overgrowth for dual‐gated metal–oxide–semiconductor field‐effect transistors

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Characterization of Si_1−xGe_x epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor

H. Lafontaine; D. C. Houghton; D. Elliot; N. L. Rowell; J.‐M. Baribeau; S. Laframboise; G. I. Sproule; S. J. Rolfe

J. Vac. Sci. Technol. B 14, 1675–1681 (1996) https://doi.org/10.1116/1.589209

Abstract

View articletitled, Characterization of Si1−xGex epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor

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Microwave plasma nitridation of Si(100), Ge(100), and Si_1−xGe_x surfaces: A comparative study

M. Mukhopadhyay; S. K. Ray; C. K. Maiti

J. Vac. Sci. Technol. B 14, 1682–1686 (1996) https://doi.org/10.1116/1.589210

Abstract

View articletitled, Microwave plasma nitridation of Si(100), Ge(100), and Si1−xGex surfaces: A comparative study

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In situ investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO₂

Y. Wang; Y. Z. Hu; E. A. Irene

J. Vac. Sci. Technol. B 14, 1687–1696 (1996) https://doi.org/10.1116/1.589211

Abstract

View articletitled, In situ investigation of the passivation of Si and Ge by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiO2

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Measurement of N in nitrided oxides using spectroscopic immersion ellipsometry

E. A. Irene; Q. Liu; W. M. Paulson; P. J. Tobin; R. I. Hegde

J. Vac. Sci. Technol. B 14, 1697–1701 (1996) https://doi.org/10.1116/1.589212

Abstract

View articletitled, Measurement of N in nitrided oxides using spectroscopic immersion ellipsometry

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Analysis of Fourier transform infrared spectra and peak shifts in plasma‐enhanced chemical vapor deposited fluorinated silica glasses

Richard Swope; Woo Sik Yoo

J. Vac. Sci. Technol. B 14, 1702–1705 (1996) https://doi.org/10.1116/1.589213

Abstract

View articletitled, Analysis of Fourier transform infrared spectra and peak shifts in plasma‐enhanced chemical vapor deposited fluorinated silica glasses

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Structural and electrical characterization of TiO₂ grown from titanium tetrakis‐isopropoxide (TTIP) and TTIP/H₂O ambients

J. Yan; D. C. Gilmer; S. A. Campbell; W. L. Gladfelter; P. G. Schmid

J. Vac. Sci. Technol. B 14, 1706–1711 (1996) https://doi.org/10.1116/1.589214

Abstract

View articletitled, Structural and electrical characterization of TiO2 grown from titanium tetrakis‐isopropoxide (TTIP) and TTIP/H2O ambients

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Silicon dioxide passivation of InP/InGaAs metal‐semiconductor‐metal photodetectors

St. Kollakowski; U. Schade; E. H. Böttcher; D. Kuhl; D. Bimberg; P. Ambrée; K. Wandel

J. Vac. Sci. Technol. B 14, 1712–1718 (1996) https://doi.org/10.1116/1.589215

Abstract

View articletitled, Silicon dioxide passivation of InP/InGaAs metal‐semiconductor‐metal photodetectors

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Molecular‐beam epitaxy of high quality lattice matched In_1−x−yGa_xAl_yAs epitaxial layers on InP substrates

S. J. Chua; A. Ramam

J. Vac. Sci. Technol. B 14, 1719–1724 (1996) https://doi.org/10.1116/1.589216

Abstract

View articletitled, Molecular‐beam epitaxy of high quality lattice matched In1−x−yGaxAlyAs epitaxial layers on InP substrates

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Basic analysis of atomic‐scale growth mechanisms for molecular beam epitaxy of GaAs using atomic hydrogen as a surfactant

Yoshitaka Okada; James S. Harris, Jr.

J. Vac. Sci. Technol. B 14, 1725–1728 (1996) https://doi.org/10.1116/1.588547

Abstract

View articletitled, Basic analysis of atomic‐scale growth mechanisms for molecular beam epitaxy of GaAs using atomic hydrogen as a surfactant

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Antimony doped GaAs: Role of the isoelectronic dopant in defect evolution

T. Paskova; E. Valcheva; R. Yakimova

J. Vac. Sci. Technol. B 14, 1729–1735 (1996) https://doi.org/10.1116/1.588548

Abstract

View articletitled, Antimony doped GaAs: Role of the isoelectronic dopant in defect evolution

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All solid source molecular beam epitaxy growth and characterization of strain‐compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high‐temperature operation

M. Toivonen; P. Savolainen; H. Asonen; R. Murison

J. Vac. Sci. Technol. B 14, 1736–1738 (1996) https://doi.org/10.1116/1.588549

Abstract

View articletitled, All solid source molecular beam epitaxy growth and characterization of strain‐compensated 1.3 μm InAsP/InGaP/InP multiquantum well lasers for high‐temperature operation

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Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy

G. Leo; M. Longo; N. Lovergine; A. M. Mancini; L. Vasanelli; A. V. Drigo; F. Romanato; T. Peluso; L. Tapfer

J. Vac. Sci. Technol. B 14, 1739–1744 (1996) https://doi.org/10.1116/1.588550

Abstract

View articletitled, Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy

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Effects of low‐temperature‐grown GaAs and AlGaAs on the current of a metal–insulator–semiconductor structure

C. L. Chen; L. J. Mahoney; K. B. Nichols; M. J. Manfra; E. R. Brown; P. M. Nitishin; K. M. Molvar; B. F. Gramstorff; R. A. Murphy

J. Vac. Sci. Technol. B 14, 1745–1751 (1996) https://doi.org/10.1116/1.588551

Abstract

View articletitled, Effects of low‐temperature‐grown GaAs and AlGaAs on the current of a metal–insulator–semiconductor structure

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Comparison of masking materials for high microwave power CH₄/H₂/Ar etching of III–V semiconductors

J. W. Lee; R. V. Crockett; S. J. Pearton

J. Vac. Sci. Technol. B 14, 1752–1757 (1996) https://doi.org/10.1116/1.588552

Abstract

View articletitled, Comparison of masking materials for high microwave power CH4/H2/Ar etching of III–V semiconductors

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BCl₃/N₂ dry etching of InP, InAlP, and InGaP

F. Ren; J. R. Lothian; J. M. Kuo; W. S. Hobson; J. Lopata; J. A. Caballero; S. J. Pearton; M. W. Cole

J. Vac. Sci. Technol. B 14, 1758–1763 (1996) https://doi.org/10.1116/1.588553

Abstract

View articletitled, BCl3/N2 dry etching of InP, InAlP, and InGaP

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Smooth etching of various III/V and II/VI semiconductors by Cl₂ reactive ion beam etching

T. Yoshikawa; Y. Sugimoto; Y. Sakata; T. Takeuchi; M. Yamamoto; H. Hotta; S. Kohmoto; K. Asakawa

J. Vac. Sci. Technol. B 14, 1764–1772 (1996) https://doi.org/10.1116/1.588554

Abstract

View articletitled, Smooth etching of various III/V and II/VI semiconductors by Cl2 reactive ion beam etching

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Influence of CH₄/H₂ reactive ion etching on the deep levels of Si‐doped Al_xGa_1−xAs (x=0.25)

R. G. Pereira; M. Van Hove; M. de Potter; M. Van Rossum

J. Vac. Sci. Technol. B 14, 1773–1779 (1996) https://doi.org/10.1116/1.588555

Abstract

View articletitled, Influence of CH4/H2 reactive ion etching on the deep levels of Si‐doped AlxGa1−xAs (x=0.25)

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Low temperature chemically assisted ion‐beam etching processes using Cl₂, CH₃I, and IBr₃ to etch InP optoelectronic devices

K. M. Eisele; J. Daleiden; J. Ralston

J. Vac. Sci. Technol. B 14, 1780–1783 (1996) https://doi.org/10.1116/1.588556

Abstract

View articletitled, Low temperature chemically assisted ion‐beam etching processes using Cl2, CH3I, and IBr3 to etch InP optoelectronic devices

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Fringe stabilization and depth monitoring during the holographic photoelectrochemical etching of n‐InP (100) substrates

David Soltz; Marco‐A. De Paoli; Lucila Cescato

J. Vac. Sci. Technol. B 14, 1784–1790 (1996) https://doi.org/10.1116/1.588557

Abstract

View articletitled, Fringe stabilization and depth monitoring during the holographic photoelectrochemical etching of n‐InP (100) substrates

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High rate and highly selective anisotropic etching for WSi_x/poly‐Si using electron cyclotron resonance plasma

Kazuo Nojiri; Kazuyuki Tsunokuni; Kazuo Yamazaki

J. Vac. Sci. Technol. B 14, 1791–1795 (1996) https://doi.org/10.1116/1.588558

Abstract

View articletitled, High rate and highly selective anisotropic etching for WSix/poly‐Si using electron cyclotron resonance plasma

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Polysilicon gate etching in high density plasmas. II. X‐ray photoelectron spectroscopy investigation of silicon trenches etched using a chlorine‐based chemistry

F. H. Bell; O. Joubert; L. Vallier

J. Vac. Sci. Technol. B 14, 1796–1806 (1996) https://doi.org/10.1116/1.588559

Abstract

View articletitled, Polysilicon gate etching in high density plasmas. II. X‐ray photoelectron spectroscopy investigation of silicon trenches etched using a chlorine‐based chemistry

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In situ fiber optic thermometry of wafer surface etched with an electron cyclotron resonance source

S. Thomas, III; E. W. Berg; S. W. Pang

J. Vac. Sci. Technol. B 14, 1807–1811 (1996) https://doi.org/10.1116/1.588560

Abstract

View articletitled, In situ fiber optic thermometry of wafer surface etched with an electron cyclotron resonance source

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Effects of surface cleaning on electrical properties for Ni contacts to p‐type ZnSe

H. Ishikawa; K. Tsukui; Y. Koide; N. Teraguchi; Y. Tomomura; A. Suzuki; Masanori Murakami

J. Vac. Sci. Technol. B 14, 1812–1818 (1996) https://doi.org/10.1116/1.588561

Abstract

View articletitled, Effects of surface cleaning on electrical properties for Ni contacts to p‐type ZnSe

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Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications

S. M. Rossnagel; C. Nichols; S. Hamaguchi; D. Ruzic; R. Turkot

J. Vac. Sci. Technol. B 14, 1819–1827 (1996) https://doi.org/10.1116/1.588562

Abstract

View articletitled, Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applications

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Chemical vapor deposition of copper from Cu^I hexafluoroacetylacetonate trimethylvinylsilane for ultralarge scale integration applications

Gregory Braeckelmann; Dirk Manger; Aaron Burke; Gregory G. Peterson; Alain E. Kaloyeros; Cindy Reidsema; Thomas R. Omstead; James F. Loan; John J. Sullivan

J. Vac. Sci. Technol. B 14, 1828–1836 (1996) https://doi.org/10.1116/1.588563

Abstract

View articletitled, Chemical vapor deposition of copper from CuI hexafluoroacetylacetonate trimethylvinylsilane for ultralarge scale integration applications

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Film property comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniques

Shi‐Qing Wang; J. Schlueter

J. Vac. Sci. Technol. B 14, 1837–1845 (1996) https://doi.org/10.1116/1.588564

Abstract

View articletitled, Film property comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniques

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Step coverage comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniques

Shi‐Qing Wang; James Schlueter; Carolyn Gondran; Ted Boden

J. Vac. Sci. Technol. B 14, 1846–1852 (1996) https://doi.org/10.1116/1.588565

Abstract

View articletitled, Step coverage comparison of Ti/TiN deposited by collimated and uncollimated physical vapor deposition techniques

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Cu metallization using a permanent magnet electron cyclotron resonance microwave plasma/sputtering hybrid system

S. M. Gorbatkin; D. B. Poker; R. L. Rhoades; C. Doughty; L. A. Berry; S. M. Rossnagel

J. Vac. Sci. Technol. B 14, 1853–1859 (1996) https://doi.org/10.1116/1.588566

Abstract

View articletitled, Cu metallization using a permanent magnet electron cyclotron resonance microwave plasma/sputtering hybrid system

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Comment on ‘‘Optimization of electrostatic deflectors’’ [J. Vac. Sci. Technol. B 13, 142 (1995)]

Bohumila Lencová

J. Vac. Sci. Technol. B 14, 1860–1863 (1996) https://doi.org/10.1116/1.588567

Abstract

View articletitled, Comment on ‘‘Optimization of electrostatic deflectors’’ [J. Vac. Sci. Technol. B 13, 142 (1995)]

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Calculation of etching profile in the photolithographic process on As₂S₃ thin films

S. Mamedov; A. Kisliuk

J. Vac. Sci. Technol. B 14, 1864–1866 (1996) https://doi.org/10.1116/1.588568

Abstract

View articletitled, Calculation of etching profile in the photolithographic process on As2S3 thin films

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Imaging fibers by atomic force microscopy

Margaret M. Curtin Carter; N. Stewart McIntyre; Ross Davidson; Hubert W. King

J. Vac. Sci. Technol. B 14, 1867–1869 (1996) https://doi.org/10.1116/1.588569

Abstract

View articletitled, Imaging fibers by atomic force microscopy

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Versatile sample handling system for scanning tunneling microscopy studies of molecular beam epitaxy

L. J. Whitman; P. M. Thibado; F. Linker; J. Patrin

J. Vac. Sci. Technol. B 14, 1870–1872 (1996) https://doi.org/10.1116/1.588570

View articletitled, Versatile sample handling system for scanning tunneling microscopy studies of molecular beam epitaxy

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Analytical expressions for emission characteristics as a function of experimental parameters in sharp field emitter devices [J. Vac. Sci. Technol. B 13, 511 (1995)]

K. L. Jensen; E. G. Zaidman

J. Vac. Sci. Technol. B 14, 1873–1874 (1996) https://doi.org/10.1116/1.588571

View articletitled, Analytical expressions for emission characteristics as a function of experimental parameters in sharp field emitter devices [J. Vac. Sci. Technol. B 13, 511 (1995)]

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Control of emission characteristics of silicon field emitter arrays by an ion implantation technique

Seigo Kanemaru; Takayuki Hirano; Hisao Tanoue; Junji Itoh

J. Vac. Sci. Technol. B 14, 1885–1888 (1996) https://doi.org/10.1116/1.588572

Abstract

View articletitled, Control of emission characteristics of silicon field emitter arrays by an ion implantation technique

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Instability and reliability of silicon field emission array

Q. Li; J. F. Xu; H. B. Song; X. F. Liu; W. P. Kang

J. Vac. Sci. Technol. B 14, 1889–1894 (1996) https://doi.org/10.1116/1.588573

Abstract

View articletitled, Instability and reliability of silicon field emission array

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Characterization of porous silicon field emitter properties

E. C. Boswell; M. Huang; G. D. W. Smith; P. R. Wilshaw

J. Vac. Sci. Technol. B 14, 1895–1898 (1996) https://doi.org/10.1116/1.588574

Abstract

View articletitled, Characterization of porous silicon field emitter properties

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Porous silicon field emission cathode development

J. R. Jessing; D. L. Parker; M. H. Weichold

J. Vac. Sci. Technol. B 14, 1899–1901 (1996) https://doi.org/10.1116/1.588950

Abstract

View articletitled, Porous silicon field emission cathode development

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Electron‐beam characteristics of double‐gated Si field emitter arrays

Yasushi Toma; Seigo Kanemaru; Junji Itoh

J. Vac. Sci. Technol. B 14, 1902–1905 (1996) https://doi.org/10.1116/1.588951

Abstract

View articletitled, Electron‐beam characteristics of double‐gated Si field emitter arrays

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Fabrication of silicon field emitters by forming porous silicon

Donghwan Kim; Sang Jik Kwon; Jong Duk Lee

J. Vac. Sci. Technol. B 14, 1906–1909 (1996) https://doi.org/10.1116/1.588952

Abstract

View articletitled, Fabrication of silicon field emitters by forming porous silicon

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Polycrystalline silicon field emitters

E. C. Boswell; S. E. Huq; M. Huang; P. D. Prewett; P. R. Wilshaw

J. Vac. Sci. Technol. B 14, 1910–1913 (1996) https://doi.org/10.1116/1.588953

Abstract

View articletitled, Polycrystalline silicon field emitters

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Influence of fill gases on the failure rate of gated silicon field emitter arrays

S. Meassick; H. Champaign

J. Vac. Sci. Technol. B 14, 1914–1917 (1996) https://doi.org/10.1116/1.588954

Abstract

View articletitled, Influence of fill gases on the failure rate of gated silicon field emitter arrays

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Modeling of thermal effects in silicon field emitters

M. G. Ancona

J. Vac. Sci. Technol. B 14, 1918–1923 (1996) https://doi.org/10.1116/1.588955

Abstract

View articletitled, Modeling of thermal effects in silicon field emitters

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Modeling and comparisons of field emitter devices with various geometries

Jie Hun Kang; Jin Woo Cho; Jae Wan Kim; Jong Min Kim

J. Vac. Sci. Technol. B 14, 1924–1929 (1996) https://doi.org/10.1116/1.588956

Abstract

View articletitled, Modeling and comparisons of field emitter devices with various geometries

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Spatial distribution of the electric field for field emission microtriodes

Dan Nicolaescu

J. Vac. Sci. Technol. B 14, 1930–1933 (1996) https://doi.org/10.1116/1.588957

Abstract

View articletitled, Spatial distribution of the electric field for field emission microtriodes

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Computer simulation of the field emission from multilayer cathodes

Yu. V. Kryuchenko; V. G. Litovchenko

J. Vac. Sci. Technol. B 14, 1934–1937 (1996) https://doi.org/10.1116/1.588958

Abstract

View articletitled, Computer simulation of the field emission from multilayer cathodes

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Electrostatic analysis of field emission triode with volcano‐type gate

Baoping Wang; Linsu Tong; Johnny K. O. Sin; Vincent M. C. Poon

J. Vac. Sci. Technol. B 14, 1938–1941 (1996) https://doi.org/10.1116/1.588959

Abstract

View articletitled, Electrostatic analysis of field emission triode with volcano‐type gate

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Analytical and seminumerical models for gated field emitter arrays. I. Theory

K. L. Jensen; E. G. Zaidman; M. A. Kodis; B. Goplen; D. N. Smithe

J. Vac. Sci. Technol. B 14, 1942–1946 (1996) https://doi.org/10.1116/1.588960

Abstract

View articletitled, Analytical and seminumerical models for gated field emitter arrays. I. Theory

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Analytical and seminumerical models for gated field emitter arrays. II. Comparison of theory to experiment

K. L. Jensen; E. G. Zaidman; M. A. Kodis; B. Goplen; D. N. Smithe

J. Vac. Sci. Technol. B 14, 1947–1951 (1996) https://doi.org/10.1116/1.588961

Abstract

View articletitled, Analytical and seminumerical models for gated field emitter arrays. II. Comparison of theory to experiment

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Three dimensional axisymmetric space charge simulation via boundary elements and emitted particles

Robert L. Hartman; William A. Mackie; Paul R. Davis

J. Vac. Sci. Technol. B 14, 1952–1957 (1996) https://doi.org/10.1116/1.588962

Abstract

View articletitled, Three dimensional axisymmetric space charge simulation via boundary elements and emitted particles

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Fabrication and testing of vertical metal edge emitters with well defined gate to emitter separation

J. G. Fleming; D. A. A. Ohlberg; T. Felter; M. Malinowski

J. Vac. Sci. Technol. B 14, 1958–1962 (1996) https://doi.org/10.1116/1.588963

Abstract

View articletitled, Fabrication and testing of vertical metal edge emitters with well defined gate to emitter separation

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Manufacturing a patternable metallized substrate for tungsten ultralong field emitter array by use of the double ion beam deposition method

G. Y. Liu; M. H. Zhu; S. W. Tang; C. C. Zhu; J. S. Liu

J. Vac. Sci. Technol. B 14, 1963–1965 (1996) https://doi.org/10.1116/1.588964

Abstract

View articletitled, Manufacturing a patternable metallized substrate for tungsten ultralong field emitter array by use of the double ion beam deposition method

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New approach to manufacturing field emitter arrays with sub‐half‐micron gate apertures

Chun Gyoo Lee; Ho Young Ahn; Byung Gook Park; Jong Duk Lee

J. Vac. Sci. Technol. B 14, 1966–1969 (1996) https://doi.org/10.1116/1.588965

Abstract

View articletitled, New approach to manufacturing field emitter arrays with sub‐half‐micron gate apertures

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Cone‐shaped metal–insulator–semiconductor cathode for vacuum microelectronics

Junzo Ishikawa; Kazunori Inoue; Shinji Sadakane; Yasuhito Gotoh; Hiroshi Tsuji

J. Vac. Sci. Technol. B 14, 1970–1972 (1996) https://doi.org/10.1116/1.588966

Abstract

View articletitled, Cone‐shaped metal–insulator–semiconductor cathode for vacuum microelectronics

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Modification of field emitter array tip shape by focused ion‐beam irradiation

M. Takai; T. Kishimoto; M. Yamashita; H. Morimoto; S. Yura; A. Hosono; S. Okuda; S. Lipp; L. Frey; H. Ryssel

J. Vac. Sci. Technol. B 14, 1973–1976 (1996) https://doi.org/10.1116/1.588967

Abstract

View articletitled, Modification of field emitter array tip shape by focused ion‐beam irradiation

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A new structure of field emitter arrays

Shigeo Itoh; Takahiro Niiyama; Masateru Taniguchi; Teruo Watanabe

J. Vac. Sci. Technol. B 14, 1977–1981 (1996) https://doi.org/10.1116/1.588968

Abstract

View articletitled, A new structure of field emitter arrays

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Two‐stage distributed amplifier on field emitter arrays

Y. F. Zakharchenko; G. V. Torgashov; Y. V. Gulyaev; N. I. Sinitsyn; I. S. Nefedov; A. I. Zhbanov; E. M. Il’in

J. Vac. Sci. Technol. B 14, 1982–1985 (1996) https://doi.org/10.1116/1.588969

Abstract

View articletitled, Two‐stage distributed amplifier on field emitter arrays

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Field‐emitter‐array development for microwave applications

C. A. Spindt; C. E. Holland; P. R. Schwoebel; I. Brodie

J. Vac. Sci. Technol. B 14, 1986–1989 (1996) https://doi.org/10.1116/1.588970

Abstract

View articletitled, Field‐emitter‐array development for microwave applications

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Optimization of field emission arrays for inductive output amplifiers

M. A. Kodis; K. L. Jensen; and E. G. Zaidman; B. Goplen; D. N. Smithe

J. Vac. Sci. Technol. B 14, 1990–1993 (1996) https://doi.org/10.1116/1.588971

Abstract

View articletitled, Optimization of field emission arrays for inductive output amplifiers

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A, B, and C characterization of gated field emission arrays for radio frequency device performance

E. G. Zaidman; K. L. Jensen; M. A. Kodis

J. Vac. Sci. Technol. B 14, 1994–1999 (1996) https://doi.org/10.1116/1.588972

Abstract

View articletitled, A, B, and C characterization of gated field emission arrays for radio frequency device performance

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Novel high‐density plasma tool for large area flat panel display etching

F. Heinrich; U. Bänziger; A. Jentzsch; G. Neumann; C. Huth

J. Vac. Sci. Technol. B 14, 2000–2004 (1996) https://doi.org/10.1116/1.588973

Abstract

View articletitled, Novel high‐density plasma tool for large area flat panel display etching

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Fabrication of sub‐0.5 μm diameter cobalt dots on silicon substrates and photoresist pedestals on 50 cm×50 cm glass substrates using laser interference lithograph

J. P. Spallas; R. D. Boyd; J. A. Britten; A. Fernandez; A. M. Hawryluk; M. D. Perry; D. R. Kania

J. Vac. Sci. Technol. B 14, 2005–2007 (1996) https://doi.org/10.1116/1.588974

Abstract

View articletitled, Fabrication of sub‐0.5 μm diameter cobalt dots on silicon substrates and photoresist pedestals on 50 cm×50 cm glass substrates using laser interference lithograph

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Benefits of the lateral resistor in a field effect display

Jules D. Levine

J. Vac. Sci. Technol. B 14, 2008–2010 (1996) https://doi.org/10.1116/1.588975

Abstract

View articletitled, Benefits of the lateral resistor in a field effect display

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Electron field emission from chemical vapor deposited diamond

W. Zhu; G. P. Kochanski; S. Jin; L. Seibles

J. Vac. Sci. Technol. B 14, 2011–2019 (1996) https://doi.org/10.1116/1.588976

Abstract

View articletitled, Electron field emission from chemical vapor deposited diamond

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Monte Carlo study of hot electron and ballistic transport in diamond: Low electric field region

P. H. Cutler; Z.‐H. Huang; N. M. Miskovsky; P. D’Ambrosio; M. Chung

J. Vac. Sci. Technol. B 14, 2020–2023 (1996) https://doi.org/10.1116/1.588977

Abstract

View articletitled, Monte Carlo study of hot electron and ballistic transport in diamond: Low electric field region

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Characterization of amorphous carbon coated silicon field emitters

A. F. Myers; S. M. Camphausen; J. J. Cuomo; J. J. Hren; J. Liu; J. Bruley

J. Vac. Sci. Technol. B 14, 2024–2029 (1996) https://doi.org/10.1116/1.588978

Abstract

View articletitled, Characterization of amorphous carbon coated silicon field emitters

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Cold emission from the single‐crystalline microparticle of diamond on a Si tip

E. I. Givargizov; V. V. Zhirnov; A. V. Kuznetsov; P. S. Plekhanov

J. Vac. Sci. Technol. B 14, 2030–2033 (1996) https://doi.org/10.1116/1.588979

Abstract

View articletitled, Cold emission from the single‐crystalline microparticle of diamond on a Si tip

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Emission stability and high current performance of diamond‐coated Si emitters

V. V. Zhirnov; A. B. Voronin; E. I. Givargizov; A. L. Meshcheryakova

J. Vac. Sci. Technol. B 14, 2034–2036 (1996) https://doi.org/10.1116/1.588980

Abstract

View articletitled, Emission stability and high current performance of diamond‐coated Si emitters

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Calculation of electronic properties of defects in diamond: Application to electron emission

N. M. Miskovsky; P. H. Cutler; Z.‐H. Huang

J. Vac. Sci. Technol. B 14, 2037–2040 (1996) https://doi.org/10.1116/1.588981

Abstract

View articletitled, Calculation of electronic properties of defects in diamond: Application to electron emission

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Work function measurements of diamond film surfaces

W. A. Mackie; Jason E. Plumlee; A. E. Bell

J. Vac. Sci. Technol. B 14, 2041–2045 (1996) https://doi.org/10.1116/1.588982

Abstract

View articletitled, Work function measurements of diamond film surfaces

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Electron emission observations from as‐grown and vacuum‐coated chemical vapor deposited diamond

A. Lamouri; Yaxin Wang; G. T. Mearini; I. L. Krainsky; J. A. Dayton, Jr.; W. Mueller

J. Vac. Sci. Technol. B 14, 2046–2049 (1996) https://doi.org/10.1116/1.588983

Abstract

View articletitled, Electron emission observations from as‐grown and vacuum‐coated chemical vapor deposited diamond

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Field emission from diamond coated molybdenum field emitters

W. B. Choi; J. Liu; M. T. McClure; A. F. Myers; V. V. Zhirnov; J. J. Cuomo; J. J. Hren

J. Vac. Sci. Technol. B 14, 2050–2055 (1996) https://doi.org/10.1116/1.588984

Abstract

View articletitled, Field emission from diamond coated molybdenum field emitters

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Field emission measurements with μm resolution on chemical‐vapor‐deposited polycrystalline diamond films

N. Pupeter; A. Göhl; T. Habermann; E. Mahner; G. Müller; H. Piel; Ph. Niedermann; W. Hänni

J. Vac. Sci. Technol. B 14, 2056–2059 (1996) https://doi.org/10.1116/1.588985

Abstract

View articletitled, Field emission measurements with μm resolution on chemical‐vapor‐deposited polycrystalline diamond films

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Diamond emitters fabrication and theory

M. W. Geis; J. C. Twichell; T. M. Lyszczarz

J. Vac. Sci. Technol. B 14, 2060–2067 (1996) https://doi.org/10.1116/1.588986

Abstract

View articletitled, Diamond emitters fabrication and theory

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Micropatterned polycrystalline diamond field emitter vacuum diode arrays

W. P. Kang; J. L. Davidson; M. Howell; B. Bhuva; D. L. Kinser; D. V. Kerns; Q. Li; J. F. Xu

J. Vac. Sci. Technol. B 14, 2068–2071 (1996) https://doi.org/10.1116/1.588987

Abstract

View articletitled, Micropatterned polycrystalline diamond field emitter vacuum diode arrays

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Graded electron affinity electron source

J. L. Shaw; H. F. Gray; K. L. Jensen; T. M. Jung

J. Vac. Sci. Technol. B 14, 2072–2079 (1996) https://doi.org/10.1116/1.588988

Abstract

View articletitled, Graded electron affinity electron source

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Influence of external factors on electron field emission from thin‐film nanofilament carbon structures

L. A. Chernozatonskii; Z. Ya. Kosakovskaya; Yu. V. Gulyaev; N. I. Sinitsyn; G. V. Torgashov; Yu. F. Zakharchenko

J. Vac. Sci. Technol. B 14, 2080–2082 (1996) https://doi.org/10.1116/1.588989

Abstract

View articletitled, Influence of external factors on electron field emission from thin‐film nanofilament carbon structures

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Field emission from microstructured cesiated surfaces

J. Mitterauer

J. Vac. Sci. Technol. B 14, 2083–2086 (1996) https://doi.org/10.1116/1.588990

Abstract

View articletitled, Field emission from microstructured cesiated surfaces

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Vacuum emission of hot and ballistic electrons from GaAs

H.‐J Fitting; Th. Hingst; E. Schreiber; E. Geib

J. Vac. Sci. Technol. B 14, 2087–2089 (1996) https://doi.org/10.1116/1.588875

Abstract

View articletitled, Vacuum emission of hot and ballistic electrons from GaAs

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Field emission from ZrC films on Si and Mo single emitters and emitter arrays

Tianbao Xie; W. A. Mackie; P. R. Davis

J. Vac. Sci. Technol. B 14, 2090–2092 (1996) https://doi.org/10.1116/1.588876

Abstract

View articletitled, Field emission from ZrC films on Si and Mo single emitters and emitter arrays

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Emission characteristics of metal–insulator–metal tunnel cathodes

Hiroshi Adachi

J. Vac. Sci. Technol. B 14, 2093–2095 (1996) https://doi.org/10.1116/1.588877

Abstract

View articletitled, Emission characteristics of metal–insulator–metal tunnel cathodes

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Experiments of highly emissive metal–oxide–semiconductor electron tunneling cathode

Kuniyoshi Yokoo; Gen Koshita; Satoru Hanzawa; Yoshiaki Abe; Yoichiro Neo

J. Vac. Sci. Technol. B 14, 2096–2099 (1996) https://doi.org/10.1116/1.588878

Abstract

View articletitled, Experiments of highly emissive metal–oxide–semiconductor electron tunneling cathode

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Analysis of vacuum microelectronic components by the use of special finite elements

Peter Kopka; Helmut Ermert

J. Vac. Sci. Technol. B 14, 2100–2104 (1996) https://doi.org/10.1116/1.588879

Abstract

View articletitled, Analysis of vacuum microelectronic components by the use of special finite elements

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Microscopic characterization of field emitter array structure and work function by scanning Maxwell‐stress microscopy

Junji Itoh; Yutaro Nazuka; Seigo Kanemaru; Takahito Inoue; Hiroshi Yokoyama; Keizo Shimizu

J. Vac. Sci. Technol. B 14, 2105–2109 (1996) https://doi.org/10.1116/1.588880

Abstract

View articletitled, Microscopic characterization of field emitter array structure and work function by scanning Maxwell‐stress microscopy

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Performance of the trial scanning atom probe: New approach to evaluate the microtip apex

Osamu Nishikawa; Masashi Iwatsuki; Susumu Aoki; Yuuichi Ishikawa

J. Vac. Sci. Technol. B 14, 2110–2113 (1996) https://doi.org/10.1116/1.588881

Abstract

View articletitled, Performance of the trial scanning atom probe: New approach to evaluate the microtip apex

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Field emission characteristics of transition‐metal nitrides

Michiaki Endo; Hideaki Nakane; Hiroshi Adachi

J. Vac. Sci. Technol. B 14, 2114–2118 (1996) https://doi.org/10.1116/1.588882

Abstract

View articletitled, Field emission characteristics of transition‐metal nitrides

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Bayard–Alpert vacuum gauge with microtips

R. Baptist; C. Bieth; C. Py

J. Vac. Sci. Technol. B 14, 2119–2125 (1996) https://doi.org/10.1116/1.588883

Abstract

View articletitled, Bayard–Alpert vacuum gauge with microtips

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An evaluation of the intrinsic emittance of a field emitter

Youfan Liu; Y. Y. Lau

J. Vac. Sci. Technol. B 14, 2126–2129 (1996) https://doi.org/10.1116/1.588884

Abstract

View articletitled, An evaluation of the intrinsic emittance of a field emitter

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Parameters of the tip arrays covered by low work function layers

A. A. Evtukh; V. G. Litovchenko; R. I. Marchenko; N. I. Klyui; V. Semenovich; C. Nelep

J. Vac. Sci. Technol. B 14, 2130–2134 (1996) https://doi.org/10.1116/1.588885

Abstract

View articletitled, Parameters of the tip arrays covered by low work function layers

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Autocorrelation function of 1/f current fluctuations in vacuum microelectronics devices

R. N. Amirkhanov; S. S. Ghots; R. Z. Bakhtizin

J. Vac. Sci. Technol. B 14, 2135–2146 (1996) https://doi.org/10.1116/1.588886

Abstract

View articletitled, Autocorrelation function of 1/f current fluctuations in vacuum microelectronics devices

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Real‐time simultaneous optical‐based flux monitoring of Al, Ga, and In using atomic absorption for molecular beam epitaxy

Paul Pinsukanjana; Andrew Jackson; Jan Tofte; Kevin Maranowski; Scott Campbell; John English; Scott Chalmers; Larry Coldren; Arthur Gossard

J. Vac. Sci. Technol. B 14, 2147–2150 (1996) https://doi.org/10.1116/1.588887

Abstract

View articletitled, Real‐time simultaneous optical‐based flux monitoring of Al, Ga, and In using atomic absorption for molecular beam epitaxy

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Methodologies for in situ pyrometric interferometry monitoring and control of molecular beam epitaxy growth of AlAs/GaAs distributed Bragg reflectors

H. P. Lee; Y. Li; D. L. Sato; J. J. Zhou

J. Vac. Sci. Technol. B 14, 2151–2156 (1996) https://doi.org/10.1116/1.588888

Abstract

View articletitled, Methodologies for in situ pyrometric interferometry monitoring and control of molecular beam epitaxy growth of AlAs/GaAs distributed Bragg reflectors

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Investigation of the accuracy of pyrometric interferometry in determining Al_xGa_1−xAs growth rates and compositions

R. N. Sacks; R. M. Sieg; S. A. Ringel

J. Vac. Sci. Technol. B 14, 2157–2162 (1996) https://doi.org/10.1116/1.588889

Abstract

View articletitled, Investigation of the accuracy of pyrometric interferometry in determining AlxGa1−xAs growth rates and compositions

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Photoemission oscillations as an in situ monitor of layer thickness with monolayer resolution

J. J. Zinck; D. H. Chow; J. Schulman

J. Vac. Sci. Technol. B 14, 2163–2165 (1996) https://doi.org/10.1116/1.588890

Abstract

View articletitled, Photoemission oscillations as an in situ monitor of layer thickness with monolayer resolution

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Performance evaluation of the commercial point of inflection thermometry substrate temperature monitor

Stefan P. Svensson; David M. Gill

J. Vac. Sci. Technol. B 14, 2166–2169 (1996) https://doi.org/10.1116/1.588891

Abstract

View articletitled, Performance evaluation of the commercial point of inflection thermometry substrate temperature monitor

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Strain‐modulated epitaxy: Modification of growth kinetics via patterned, compliant substrates

Carrie Carter‐Coman; April S. Brown; Robert Bicknell‐Tassius; Nan Marie Jokerst; Françoise Fournier; Douglas E. Dawson

J. Vac. Sci. Technol. B 14, 2170–2174 (1996) https://doi.org/10.1116/1.588892

Abstract

View articletitled, Strain‐modulated epitaxy: Modification of growth kinetics via patterned, compliant substrates

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Properties and applications of the ‘‘epitaxial shadow mask molecular beam epitaxy technique’’

S. Malzer; M. Kneissl; P. Kiesel; K. H. Gulden; X. X. Wu; J. S. Smith; G. H. Döhler

J. Vac. Sci. Technol. B 14, 2175–2179 (1996) https://doi.org/10.1116/1.588893

Abstract

View articletitled, Properties and applications of the ‘‘epitaxial shadow mask molecular beam epitaxy technique’’

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Siamese cell for group V flux measurements, uniform arsenide phosphide alloys, and quaternary lasers

C. E. C. Wood; F. G. Johnson

J. Vac. Sci. Technol. B 14, 2180–2183 (1996) https://doi.org/10.1116/1.588894

Abstract

View articletitled, Siamese cell for group V flux measurements, uniform arsenide phosphide alloys, and quaternary lasers

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Analysis of cracking efficiency of an atomic hydrogen source, and its effect on desorption of Al_xGa_1−xAs native oxides

G. W. Wicks; E. R. Rueckwald; M. W. Koch

J. Vac. Sci. Technol. B 14, 2184–2186 (1996) https://doi.org/10.1116/1.588895

Abstract

View articletitled, Analysis of cracking efficiency of an atomic hydrogen source, and its effect on desorption of AlxGa1−xAs native oxides

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Reduction of visible defect densities in molecular beam epitaxy grown GaAs using a high‐capacity, low flux transient Ga source with novel crucible inserts

R. N. Sacks; George A. Patterson; Kathleen A. Stair

J. Vac. Sci. Technol. B 14, 2187–2191 (1996) https://doi.org/10.1116/1.588896

Abstract

View articletitled, Reduction of visible defect densities in molecular beam epitaxy grown GaAs using a high‐capacity, low flux transient Ga source with novel crucible inserts

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Cell configuration‐induced strain in quaternary films

Stefan P. Svensson; Parvez N. Uppal; David M. Gill

J. Vac. Sci. Technol. B 14, 2192–2194 (1996) https://doi.org/10.1116/1.588897

Abstract

View articletitled, Cell configuration‐induced strain in quaternary films

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Self‐assembled InSb and GaSb quantum dots on GaAs(001)

B. R. Bennett; P. M. Thibado; M. E. Twigg; E. R. Glaser; R. Magno; B. V. Shanabrook; L. J. Whitman

J. Vac. Sci. Technol. B 14, 2195–2198 (1996) https://doi.org/10.1116/1.588898

Abstract

View articletitled, Self‐assembled InSb and GaSb quantum dots on GaAs(001)

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New insights into the kinetics of the stress‐driven two‐dimensional to three‐dimensional transition

K. M. Chen; D. E. Jesson; S. J. Pennycook; T. Thundat; R. J. Warmack

J. Vac. Sci. Technol. B 14, 2199–2202 (1996) https://doi.org/10.1116/1.588899

Abstract

View articletitled, New insights into the kinetics of the stress‐driven two‐dimensional to three‐dimensional transition

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Strained coherent InAs quantum box islands on GaAs(100): Size equalization, vertical self‐organization, and optical properties

Qianghua Xie; N. P. Kobayashi; T. R. Ramachandran; A. Kalburge; P. Chen; A. Madhukar

J. Vac. Sci. Technol. B 14, 2203–2207 (1996) https://doi.org/10.1116/1.588900

Abstract

View articletitled, Strained coherent InAs quantum box islands on GaAs(100): Size equalization, vertical self‐organization, and optical properties

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Structural and photoluminescence properties of growth‐induced InAs island columns in GaAs

G. S. Solomon; J. A. Trezza; A. F. Marshall; J. S. Harris, Jr.

J. Vac. Sci. Technol. B 14, 2208–2211 (1996) https://doi.org/10.1116/1.588901

Abstract

View articletitled, Structural and photoluminescence properties of growth‐induced InAs island columns in GaAs

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High index orientation effects of strained self‐assembled InGaAs quantum dots

D. I. Lubyshev; P. P. González‐Borrero; E. Marega, Jr.; E. Petitprez; P. Basmaji

J. Vac. Sci. Technol. B 14, 2212–2215 (1996) https://doi.org/10.1116/1.588902

Abstract

View articletitled, High index orientation effects of strained self‐assembled InGaAs quantum dots

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Commercial heterojunction bipolar transistor production by molecular beam epitaxy

Dwight C. Streit; Aaron K. Oki; Thomas R. Block; Michael D. Lammert; Matthew M. Hoppe; Donald K. Umemoto; Michael Wojtowicz

J. Vac. Sci. Technol. B 14, 2216–2220 (1996) https://doi.org/10.1116/1.588903

Abstract

View articletitled, Commercial heterojunction bipolar transistor production by molecular beam epitaxy

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Molecular beam epitaxy growth and characterization of InGaAlAs‐collector heterojunction bipolar transistors with 140 GHz f_max and 20 V breakdown

T. R. Block; M. Wojtowicz; J. Cowles; L. Tran; A. K. Oki; D. C. Streit

J. Vac. Sci. Technol. B 14, 2221–2224 (1996) https://doi.org/10.1116/1.588904

Abstract

View articletitled, Molecular beam epitaxy growth and characterization of InGaAlAs‐collector heterojunction bipolar transistors with 140 GHz fmax and 20 V breakdown

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InGaP/GaAs/InGaP double‐heterojunction bipolar transistors grown by solid‐source molecular‐beam epitaxy with a valved phosphorus cracker

T. P. Chin; J. C. P. Chang; J. M. Woodall; W. L. Chen; G. I. Haddad

J. Vac. Sci. Technol. B 14, 2225–2228 (1996) https://doi.org/10.1116/1.588905

Abstract

View articletitled, InGaP/GaAs/InGaP double‐heterojunction bipolar transistors grown by solid‐source molecular‐beam epitaxy with a valved phosphorus cracker

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Surface segregation of arsenic and phosphorus from buried layers during Si molecular beam epitaxy

K. D. Hobart; F. J. Kub; G. G. Jernigan; P. E. Thompson

J. Vac. Sci. Technol. B 14, 2229–2232 (1996) https://doi.org/10.1116/1.588906

Abstract

View articletitled, Surface segregation of arsenic and phosphorus from buried layers during Si molecular beam epitaxy

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In_1−xAl_xP/InAlAs/InGaAs and InAlAs/InAs_0.3P_0.7 high‐electron mobility transistor structures grown by solid source molecular beam epitaxy

W. E. Hoke; P. J. Lemonias; D. G. Weir; H. T. Hendriks; L.‐J. Chou; K. C. Hsieh

J. Vac. Sci. Technol. B 14, 2233–2235 (1996) https://doi.org/10.1116/1.588907

Abstract

View articletitled, In1−xAlxP/InAlAs/InGaAs and InAlAs/InAs0.3P0.7 high‐electron mobility transistor structures grown by solid source molecular beam epitaxy

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Pseudomorphic high‐electron‐mobility transistors with low‐temperature‐grown GaAs buffers

T. J. Rogers; K. B. Nichols; W. F. Kopp; F. W. Smith; R. Actis

J. Vac. Sci. Technol. B 14, 2236–2239 (1996) https://doi.org/10.1116/1.588908

Abstract

View articletitled, Pseudomorphic high‐electron‐mobility transistors with low‐temperature‐grown GaAs buffers

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Nondestructive test methodology for molecular beam epitaxy grown pseudomorphic high electron mobility transistor materials

Y. C. Pao

J. Vac. Sci. Technol. B 14, 2240–2243 (1996) https://doi.org/10.1116/1.588909

Abstract

View articletitled, Nondestructive test methodology for molecular beam epitaxy grown pseudomorphic high electron mobility transistor materials

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All solid source molecular beam epitaxy growth of Ga_xIn_1−xAs_yP_1−y/InP lasers using phosphorus and arsenic valved cracking cells

J. N. Baillargeon; K. Y. Cheng; A. Y. Cho; S. N. G. Chu

J. Vac. Sci. Technol. B 14, 2244–2247 (1996) https://doi.org/10.1116/1.588910

Abstract

View articletitled, All solid source molecular beam epitaxy growth of GaxIn1−xAsyP1−y/InP lasers using phosphorus and arsenic valved cracking cells

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Molecular beam epitaxy growth of InGaP multiple quantum well structures on GaP for optical modulators

T. J. Vogt; P. Thiagarajan; G. Y. Robinson

J. Vac. Sci. Technol. B 14, 2248–2251 (1996) https://doi.org/10.1116/1.588911

Abstract

View articletitled, Molecular beam epitaxy growth of InGaP multiple quantum well structures on GaP for optical modulators

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Improved modulation contrast of asymmetric Fabry–Perot field‐effect transistor self‐electro‐optic effect devices by in situ thickness corrections

J. M. Kuo; L. A. D’Asaro; H. C. Kuo; S. S. Pei; P. C. Chang

J. Vac. Sci. Technol. B 14, 2252–2255 (1996) https://doi.org/10.1116/1.588912

Abstract

View articletitled, Improved modulation contrast of asymmetric Fabry–Perot field‐effect transistor self‐electro‐optic effect devices by in situ thickness corrections

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Molecular beam epitaxy growth of resonant‐cavity separate‐absorption‐and‐multiplication avalanche photodiodes

K. A. Anselm; S. S. Murtaza; C. Hu; J. C. Campbell; B. G. Streetman

J. Vac. Sci. Technol. B 14, 2256–2258 (1996) https://doi.org/10.1116/1.588913

Abstract

View articletitled, Molecular beam epitaxy growth of resonant‐cavity separate‐absorption‐and‐multiplication avalanche photodiodes

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II–VI blue/green laser diodes on ZnSe substrates

C. Boney; Z. Yu; W. H. Rowland, Jr.; W. C. Hughes; J. W. Cook, Jr.; J. F. Schetzina; Gene Cantwell; William C. Harsch

J. Vac. Sci. Technol. B 14, 2259–2262 (1996) https://doi.org/10.1116/1.588914

Abstract

View articletitled, II–VI blue/green laser diodes on ZnSe substrates

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Molecular‐beam epitaxy growth of strontium thiogallate

T. Yang; B. K. Wagner; M. Chaichimansour; W. Park; Z. L. Wang; C. J. Summers

J. Vac. Sci. Technol. B 14, 2263–2266 (1996) https://doi.org/10.1116/1.588915

Abstract

View articletitled, Molecular‐beam epitaxy growth of strontium thiogallate

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Molecular beam epitaxial growth of Eu‐doped CaF₂ and BaF₂ on Si

X. M. Fang; T. Chatterjee; P. J. McCann; W. K. Liu; M. B. Santos; W. Shan; J. J. Song

J. Vac. Sci. Technol. B 14, 2267–2270 (1996) https://doi.org/10.1116/1.588916

Abstract

View articletitled, Molecular beam epitaxial growth of Eu‐doped CaF2 and BaF2 on Si

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Molecular beam epitaxy of high‐quality, nonstoichiometric multiple quantum wells

M. R. Melloch; I. Lahiri; D. D. Nolte; J. C. P. Chang; E. S. Harmon; J. M. Woodall; N. Y. Li; C. W. Tu

J. Vac. Sci. Technol. B 14, 2271–2274 (1996) https://doi.org/10.1116/1.588917

Abstract

View articletitled, Molecular beam epitaxy of high‐quality, nonstoichiometric multiple quantum wells

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Optical characterization of low temperature grown GaAs by transmission measurements above the band gap

D. Streb; M. Ruff; S. U. Dankowski; P. Kiesel; M. Kneissl; S. Malzer; U. D. Keil; G. H. Döhler

J. Vac. Sci. Technol. B 14, 2275–2277 (1996) https://doi.org/10.1116/1.588918

Abstract

View articletitled, Optical characterization of low temperature grown GaAs by transmission measurements above the band gap

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In situ and ex situ spectroscopic investigation of low temperature grown gallium arsenide by molecular beam epitaxy

Kurt G. Eyink; M. A. Capano; S. D. Walck; T. W. Haas; Ben G. Streetman

J. Vac. Sci. Technol. B 14, 2278–2281 (1996) https://doi.org/10.1116/1.588919

Abstract

View articletitled, In situ and ex situ spectroscopic investigation of low temperature grown gallium arsenide by molecular beam epitaxy

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Material optimization for a polarized electron source from strained GaAs:Be grown on an InGaP pseudosubstrate

W. G. Bi; C. W. Tu

J. Vac. Sci. Technol. B 14, 2282–2285 (1996) https://doi.org/10.1116/1.588920

Abstract

View articletitled, Material optimization for a polarized electron source from strained GaAs:Be grown on an InGaP pseudosubstrate

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Study of interface abruptness of molecular beam epitaxial GaAs/AlAs superlattices grown on GaAs (311) and (100) substrates

Y. Hsu; W. I. Wang; T. S. Kuan

J. Vac. Sci. Technol. B 14, 2286–2289 (1996) https://doi.org/10.1116/1.588921

Abstract

View articletitled, Study of interface abruptness of molecular beam epitaxial GaAs/AlAs superlattices grown on GaAs (311) and (100) substrates

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Growth and characterization of high mobility two‐dimensional electron gases

P. T. Coleridge; Z. Wasilewski; P. Zawadzki

J. Vac. Sci. Technol. B 14, 2290–2292 (1996) https://doi.org/10.1116/1.588922

Abstract

View articletitled, Growth and characterization of high mobility two‐dimensional electron gases

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Influence of surface and interface states on the electrical properties of an Al_0.2Ga_0.8As/In_0.18Ga_0.82As δ ‐modulation‐doped heterostructure

A. P. Young; H. H. Wieder

J. Vac. Sci. Technol. B 14, 2293–2296 (1996) https://doi.org/10.1116/1.588923

Abstract

View articletitled, Influence of surface and interface states on the electrical properties of an Al0.2Ga0.8As/In0.18Ga0.82As δ ‐modulation‐doped heterostructure

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Low interface state density oxide‐GaAs structures fabricated by in situ molecular beam epitaxy

M. Hong; M. Passlack; J. P. Mannaerts; J. Kwo; S. N. G. Chu; N. Moriya; S. Y. Hou; V. J. Fratello

J. Vac. Sci. Technol. B 14, 2297–2300 (1996) https://doi.org/10.1116/1.588924

Abstract

View articletitled, Low interface state density oxide‐GaAs structures fabricated by in situ molecular beam epitaxy

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Carbon tetrabromide doping memory effect, incorporation efficiency, and InAlAs/InGaAs heterojunction bipolar transistor application

W.‐Y. Hwang; M. Micovic; D. L. Miller; M. Geva

J. Vac. Sci. Technol. B 14, 2301–2304 (1996) https://doi.org/10.1116/1.588925

Abstract

View articletitled, Carbon tetrabromide doping memory effect, incorporation efficiency, and InAlAs/InGaAs heterojunction bipolar transistor application

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Comparison of (Al,Ga)As(110) grown by molecular beam epitaxy with As₂ and As₄

M. C. Holland; C. R. Stanley

J. Vac. Sci. Technol. B 14, 2305–2308 (1996) https://doi.org/10.1116/1.588926

Abstract

View articletitled, Comparison of (Al,Ga)As(110) grown by molecular beam epitaxy with As2 and As4

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X‐valley related luminescence from AlAs/(Al,Ga) As quantum well structures grown on (112)B GaAs substrates

R. H. Henderson; E. Towe

J. Vac. Sci. Technol. B 14, 2309–2311 (1996) https://doi.org/10.1116/1.588927

Abstract

View articletitled, X‐valley related luminescence from AlAs/(Al,Ga) As quantum well structures grown on (112)B GaAs substrates

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Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewalls

K. Kamath; J. Phillips; J. Singh; P. Bhattacharya

J. Vac. Sci. Technol. B 14, 2312–2314 (1996) https://doi.org/10.1116/1.588928

Abstract

View articletitled, Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewalls

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Room temperature red light photoluminescence from AlGaAs multiple quantum well structures at very low excitation intensities

F. J. Towner

J. Vac. Sci. Technol. B 14, 2315–2317 (1996) https://doi.org/10.1116/1.588848

Abstract

View articletitled, Room temperature red light photoluminescence from AlGaAs multiple quantum well structures at very low excitation intensities

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Analysis of molecular beam epitaxy grown Ga_1−xAl_xAs/Ga_1−yAl_yAs dielectric stack mirrors using complex indices of refraction

W. J. Strachan; J. Reiner; W. D. Goodhue; A. S. Karakashian; V. Casasanta; J. D. Geller

J. Vac. Sci. Technol. B 14, 2318–2321 (1996) https://doi.org/10.1116/1.588849

Abstract

View articletitled, Analysis of molecular beam epitaxy grown Ga1−xAlxAs/Ga1−yAlyAs dielectric stack mirrors using complex indices of refraction

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Solid source molecular beam epitaxy of GaInAsP/InP: Growth mechanisms and machine operation

C. C. Wamsley; M. W. Koch; G. W. Wicks

J. Vac. Sci. Technol. B 14, 2322–2324 (1996) https://doi.org/10.1116/1.588850

Abstract

View articletitled, Solid source molecular beam epitaxy of GaInAsP/InP: Growth mechanisms and machine operation

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Heavy Be doping of GaP and In_xGa_1−xP

M. V. Tagare; T. P. Chin; J. M. Woodall

J. Vac. Sci. Technol. B 14, 2325–2326 (1996) https://doi.org/10.1116/1.588851

Abstract

View articletitled, Heavy Be doping of GaP and InxGa1−xP

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Quantum confined Stark effect near 1.5 μm wavelength in InAs_0.53P_0.47/Ga_yIn_1−yP strain‐balanced quantum wells

X. B. Mei; W. G. Bi; C. W. Tu; L. J. Chou; K. C. Hsieh

J. Vac. Sci. Technol. B 14, 2327–2330 (1996) https://doi.org/10.1116/1.588852

Abstract

View articletitled, Quantum confined Stark effect near 1.5 μm wavelength in InAs0.53P0.47/GayIn1−yP strain‐balanced quantum wells

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Study on improving In_xGa_1−xAs/In_yGa_1−yP heterointerfaces in gas‐source molecular beam expitaxy

C. H. Yan; C. W. Tu

J. Vac. Sci. Technol. B 14, 2331–2334 (1996) https://doi.org/10.1116/1.588853

Abstract

View articletitled, Study on improving InxGa1−xAs/InyGa1−yP heterointerfaces in gas‐source molecular beam expitaxy

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Atomic antimony for molecular beam epitaxy of high quality III–V semiconductor alloys

P. D. Brewer; D. H. Chow; R. H. Miles

J. Vac. Sci. Technol. B 14, 2335–2338 (1996) https://doi.org/10.1116/1.588854

Abstract

View articletitled, Atomic antimony for molecular beam epitaxy of high quality III–V semiconductor alloys

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Molecular‐beam epitaxial growth and characterization of Al_xIn_1−xSb/InSb quantum well structures

W. K. Liu; Xuemei Zhang; Weiluan Ma; J. Winesett; M. B. Santos

J. Vac. Sci. Technol. B 14, 2339–2342 (1996) https://doi.org/10.1116/1.588855

Abstract

View articletitled, Molecular‐beam epitaxial growth and characterization of AlxIn1−xSb/InSb quantum well structures

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Normal incidence infrared modulators using intersubband transitions in InAs/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxy

Q. Du; J. Alperin; W. I. Wang

J. Vac. Sci. Technol. B 14, 2343–2345 (1996) https://doi.org/10.1116/1.588856

Abstract

View articletitled, Normal incidence infrared modulators using intersubband transitions in InAs/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxy

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Molecular beam epitaxy growth kinetics for group III nitrides

C. T. Foxon; T. S. Cheng; S. E. Hooper; L. C. Jenkins; J. W. Orton; D. E. Lacklison; S. V. Novikov; T. B. Popova; V. V. Tret’yakov

J. Vac. Sci. Technol. B 14, 2346–2348 (1996) https://doi.org/10.1116/1.588857

Abstract

View articletitled, Molecular beam epitaxy growth kinetics for group III nitrides

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Molecular beam epitaxy growth and properties of GaN, Al_xGa_1−xN, and AlN on GaN/SiC substrates

M. A. L. Johnson; Shizuo Fujita; W. H. Rowland, Jr.; K. A. Bowers; W. C. Hughes; Y. W. He; N. A. El‐Masry; J. W. Cook, Jr.; J. F. Schetzina; J. Ren; J. A. Edmond

J. Vac. Sci. Technol. B 14, 2349–2353 (1996) https://doi.org/10.1116/1.588858

Abstract

View articletitled, Molecular beam epitaxy growth and properties of GaN, AlxGa1−xN, and AlN on GaN/SiC substrates

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High‐quality GaN and AlN grown by gas‐source molecular beam epitaxy using ammonia as the nitrogen source

Z. Yang; L. K. Li; W. I. Wang

J. Vac. Sci. Technol. B 14, 2354–2356 (1996) https://doi.org/10.1116/1.588859

Abstract

View articletitled, High‐quality GaN and AlN grown by gas‐source molecular beam epitaxy using ammonia as the nitrogen source

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Investigation of GaN deposition on Si, Al₂O₃, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high‐energy electron diffraction

W. T. Taferner; A. Bensaoula; E. Kim; A. Bousetta

J. Vac. Sci. Technol. B 14, 2357–2361 (1996) https://doi.org/10.1116/1.588860

Abstract

View articletitled, Investigation of GaN deposition on Si, Al2O3, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high‐energy electron diffraction

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Molecular beam epitaxial growth and properties of short‐wave infrared Hg_0.3Cd_0.7Te films

R. D. Rajavel; O. K. Wu; D. M. Jamba; T. J. de Lyon

J. Vac. Sci. Technol. B 14, 2362–2365 (1996) https://doi.org/10.1116/1.588861

Abstract

View articletitled, Molecular beam epitaxial growth and properties of short‐wave infrared Hg0.3Cd0.7Te films

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Heteroepitaxy of CdTe on {211} Si using crystallized amorphous ZnTe templates

N. K. Dhar; C. E. C. Wood; A. Gray; H. Y. Wei; L. Salamanca‐Riba; J. H. Dinan

J. Vac. Sci. Technol. B 14, 2366–2370 (1996) https://doi.org/10.1116/1.588862

Abstract

View articletitled, Heteroepitaxy of CdTe on {211} Si using crystallized amorphous ZnTe templates

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Phase instability of n‐CdS grown by molecular‐beam epitaxy

T. Yamada; C. Setiagung; A. W. Jia; M. Kobayashi; A. Yoshikawa

J. Vac. Sci. Technol. B 14, 2371–2373 (1996) https://doi.org/10.1116/1.588863

Abstract

View articletitled, Phase instability of n‐CdS grown by molecular‐beam epitaxy

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High quality CdTe/Cd_1−xMg_xTe quantum wells grown on GaAs (100) and (111) substrates by molecular‐beam epitaxy

S. H. Xin; B. H. Hu; S. W. Short; U. Bindley; A. Yin; M. Dobrowolska; J. K. Furdyna

J. Vac. Sci. Technol. B 14, 2374–2377 (1996) https://doi.org/10.1116/1.588864

Abstract

View articletitled, High quality CdTe/Cd1−xMgxTe quantum wells grown on GaAs (100) and (111) substrates by molecular‐beam epitaxy

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Surface phenomena and kinetics of Si_1−xGe_x/Si (0≤x<1) growth by molecular beam epitaxy using Si₂H₆ and Ge/GeH₄

F. C. Zhang; J. Singh; P. K. Bhattacharya

J. Vac. Sci. Technol. B 14, 2378–2380 (1996) https://doi.org/10.1116/1.588865

Abstract

View articletitled, Surface phenomena and kinetics of Si1−xGex/Si (0≤x<1) growth by molecular beam epitaxy using Si2H6 and Ge/GeH4

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Interfacet mass transport and facet evolution in selective epitaxial growth of Si by gas source molecular beam epitaxy

Qi Xiang; Shaozhong Li; Dawen Wang; Kang L. Wang; J. Greg Couillard; Harold G. Craighead

J. Vac. Sci. Technol. B 14, 2381–2386 (1996) https://doi.org/10.1116/1.588866

Abstract

View articletitled, Interfacet mass transport and facet evolution in selective epitaxial growth of Si by gas source molecular beam epitaxy

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Improved luminescence quality with an asymmetric confinement potential in Si‐based type‐II quantum wells grown on a graded SiGe relaxed buffer

S. Fukatsu; N. Usami; Y. Shiraki

J. Vac. Sci. Technol. B 14, 2387–2390 (1996) https://doi.org/10.1116/1.588867

Abstract

View articletitled, Improved luminescence quality with an asymmetric confinement potential in Si‐based type‐II quantum wells grown on a graded SiGe relaxed buffer

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