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November 1995
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Surface investigations by scanning thermal microscopy
J. Vac. Sci. Technol. B 13, 2153–2156 (1995)
https://doi.org/10.1116/1.588094
Synthesis and atomic force microscopy characterization of GeFe nanophase materials
J. Vac. Sci. Technol. B 13, 2157–2159 (1995)
https://doi.org/10.1116/1.588095
Scanning tunneling microscopy investigation of Co cluster growth and induced surface morphology changes on highly oriented pyrolitic graphite
J. Vac. Sci. Technol. B 13, 2160–2165 (1995)
https://doi.org/10.1116/1.588096
Fabrication of thickness‐controlled silicon nanowires and their characteristics
J. Vac. Sci. Technol. B 13, 2166–2169 (1995)
https://doi.org/10.1116/1.588097
Si nanostructures fabricated by electron beam lithography combined with image reversal process using electron cyclotron resonance plasma oxidation
J. Vac. Sci. Technol. B 13, 2170–2174 (1995)
https://doi.org/10.1116/1.588098
New microfabrication technique on a submicrometer scale by synchrotron radiation‐excited etching
Shingo Terakado; Takashi Goto; Masayoshi Ogura; Kazuhiro Kaneda; Osamu Kitamura; Shigeo Suzuki; Masao Nakao; Kenichiro Tanaka
J. Vac. Sci. Technol. B 13, 2175–2178 (1995)
https://doi.org/10.1116/1.588099
Dry development of photosensitive polyimides for high resolution and aspect ratio applications
J. Vac. Sci. Technol. B 13, 2179–2183 (1995)
https://doi.org/10.1116/1.588100
Feasibility study of photocathode electron projection lithography
J. Vac. Sci. Technol. B 13, 2184–2188 (1995)
https://doi.org/10.1116/1.588101
Ion beam modification and patterning of organosilane self‐assembled monolayers
Earl T. Ada; Luke Hanley; Sergei Etchin; John Melngailis; Walter J. Dressick; Mu‐San Chen; Jeffrey M. Calvert
J. Vac. Sci. Technol. B 13, 2189–2196 (1995)
https://doi.org/10.1116/1.588102
Observation of sidewall contamination in submicron contact holes by thermal desorption spectroscopy
J. Vac. Sci. Technol. B 13, 2197–2200 (1995)
https://doi.org/10.1116/1.588103
Reducing electron energy dispersion of nonformed metal–insulator–metal electron emitters using the near‐threshold drive method
J. Vac. Sci. Technol. B 13, 2201–2205 (1995)
https://doi.org/10.1116/1.588104
Mechanisms of copper removal during chemical mechanical polishing
J. Vac. Sci. Technol. B 13, 2215–2218 (1995)
https://doi.org/10.1116/1.588106
Charges and defects in SiO2/Si systems after exposure to microwave plasmas
J. Vac. Sci. Technol. B 13, 2219–2225 (1995)
https://doi.org/10.1116/1.588107
Gate oxide loss at the periphery of a metal–oxide–semiconductor field‐effect transistor resulting from a polysilicon gate etch with a helicon etch tool
J. Vac. Sci. Technol. B 13, 2226–2229 (1995)
https://doi.org/10.1116/1.588053
Analysis and Monte Carlo simulations of spontaneous etching: Cl–Si(100)‐2×1
J. Vac. Sci. Technol. B 13, 2230–2233 (1995)
https://doi.org/10.1116/1.588054
Surface preparation of ZnSe by chemical methods
J. Vac. Sci. Technol. B 13, 2238–2244 (1995)
https://doi.org/10.1116/1.588056
Influence of in situ argon cleaning of GaAs on Schottky diodes and metal–semiconductor field‐effect transistors
J. Vac. Sci. Technol. B 13, 2245–2249 (1995)
https://doi.org/10.1116/1.588057
Etching temperature dependence of the surface composition and reconstruction for Cl2‐etched GaAs layers
J. Vac. Sci. Technol. B 13, 2250–2254 (1995)
https://doi.org/10.1116/1.588058
Spectroscopic ellipsometric monitoring of electron cyclotron resonance plasma etching of GaAs and AlGaAs
J. Vac. Sci. Technol. B 13, 2255–2259 (1995)
https://doi.org/10.1116/1.588059
Flux masking and thickness uniformity in molecular beam epitaxy
J. Vac. Sci. Technol. B 13, 2269–2275 (1995)
https://doi.org/10.1116/1.588061
Thermal stability of AlGaAs/GaAs single quantum well structures using photoreflectance
J. Vac. Sci. Technol. B 13, 2276–2283 (1995)
https://doi.org/10.1116/1.588062
Photoluminescence of quantum dots fabricated using tungsten stressors
J. A. Yater; A. S. Plaut; K. Kash; P. S. D. Lin; Leigh T. Florez; James P. Harbison; S. R. Das; L. Lebrun
J. Vac. Sci. Technol. B 13, 2284–2288 (1995)
https://doi.org/10.1116/1.588063
Metal–In80Al20Sb interface formation: An x‐ray photoelectron spectroscopy study
J. Vac. Sci. Technol. B 13, 2289–2292 (1995)
https://doi.org/10.1116/1.588064
Implant isolation of InxAl1−xN and InxGa1−xN
J. Vac. Sci. Technol. B 13, 2293–2296 (1995)
https://doi.org/10.1116/1.588065
Ohmic contacts on p‐In0.53Ga0.47As prepared by Zn implantation into Pd‐based metallizations
P. Ressel; H. Strusny; K. Vogel; J. Würfl; D. Fritzsche; H. Kräutle; E. Kuphal; K. Mause; M. Trapp; U. Richter
J. Vac. Sci. Technol. B 13, 2297–2305 (1995)
https://doi.org/10.1116/1.588066
Process and device technologies for 1 Gbit dynamic random‐access memory cells
J. Vac. Sci. Technol. B 13, 2329–2334 (1995)
https://doi.org/10.1116/1.588068
Excimer laser assisted etching of AlGaAs and GaAs
J. Vac. Sci. Technol. B 13, 2340–2343 (1995)
https://doi.org/10.1116/1.588070
Selective reactive ion etching of InGaAs and InP over InAlAs in SiCl4/SiF4/HBr plasmas
J. Vac. Sci. Technol. B 13, 2344–2349 (1995)
https://doi.org/10.1116/1.588071
Atomic force microscopy study of III–V materials etched using an electron cyclotron resonance source
J. Vac. Sci. Technol. B 13, 2350–2354 (1995)
https://doi.org/10.1116/1.588072
Diffusion and channeling of low‐energy ions: The mechanism of ion damage
J. Vac. Sci. Technol. B 13, 2355–2359 (1995)
https://doi.org/10.1116/1.588073
A comparative study of Cl2 and HCl gases for the chemically assisted ion beam etching of InP
J. Vac. Sci. Technol. B 13, 2360–2365 (1995)
https://doi.org/10.1116/1.588074
Plasma development of a silylated bilayer resist: Effects of etch chemistry on critical dimension control and feature profiles
J. Vac. Sci. Technol. B 13, 2366–2371 (1995)
https://doi.org/10.1116/1.588075
Fabrication of ultrasmall magnets by electroplating
J. Vac. Sci. Technol. B 13, 2372–2375 (1995)
https://doi.org/10.1116/1.588076
Analysis of InP etched surfaces using metalorganic chemical vapor deposition regrown quantum well structures
J. Vac. Sci. Technol. B 13, 2381–2385 (1995)
https://doi.org/10.1116/1.588078
Reactive ion etching lag on high rate oxide etching using high density plasma
J. Vac. Sci. Technol. B 13, 2390–2393 (1995)
https://doi.org/10.1116/1.588006
Reactive ion etching for microelectrical mechanical system fabrication
J. Vac. Sci. Technol. B 13, 2394–2399 (1995)
https://doi.org/10.1116/1.588007
Fabrication and characterization of platinum nanocrystalline material grown by electron‐beam induced deposition
J. Vac. Sci. Technol. B 13, 2400–2403 (1995)
https://doi.org/10.1116/1.588008
Space charge effects in projection charged particle lithography systems
J. Vac. Sci. Technol. B 13, 2404–2408 (1995)
https://doi.org/10.1116/1.588009
Global and stochastic space‐charge effects in ion beam lithography
J. Vac. Sci. Technol. B 13, 2409–2413 (1995)
https://doi.org/10.1116/1.588010
Coulomb effect in cell projection lithography
J. Vac. Sci. Technol. B 13, 2419–2423 (1995)
https://doi.org/10.1116/1.588012
In‐line holography using low‐energy electrons and photons: Applications for manipulation on a nanometer scale
J. Vac. Sci. Technol. B 13, 2428–2431 (1995)
https://doi.org/10.1116/1.588014
Improved emission stability of carburized HfC〈100〉 and ultrasharp tungsten field emitters
J. Vac. Sci. Technol. B 13, 2436–2440 (1995)
https://doi.org/10.1116/1.588016
Field emission properties of self‐shielded tungsten sources
J. Vac. Sci. Technol. B 13, 2441–2444 (1995)
https://doi.org/10.1116/1.588017
Beam position stabilization by suppression of electrons reentering the electron‐beam column
J. Vac. Sci. Technol. B 13, 2450–2454 (1995)
https://doi.org/10.1116/1.588019
Miniature Schottky electron source
J. Vac. Sci. Technol. B 13, 2468–2472 (1995)
https://doi.org/10.1116/1.588023
Resolution analysis in electron‐beam cell projection lithography system
J. Vac. Sci. Technol. B 13, 2473–2477 (1995)
https://doi.org/10.1116/1.588024
Performance enhancements on IBM’s EL‐4 electron‐beam lithography system
R. Butsch; W. A. Enichen; M. S. Gordon; T. R. Groves; J. G. Hartley; J. W. Pavick; H. C. Pfeiffer; R. J. Quickle; J. D. Rockrohr; W. Stickel
J. Vac. Sci. Technol. B 13, 2478–2482 (1995)
https://doi.org/10.1116/1.588025
Error budget analysis of the SCALPEL(R) mask for sub‐0.2 μm lithography
J. Vac. Sci. Technol. B 13, 2483–2487 (1995)
https://doi.org/10.1116/1.588378
Experimental evaluation of an electron‐beam pulse modulated blanker (160 MHz) for next‐generation electron‐beam raster scan systems
J. Vac. Sci. Technol. B 13, 2488–2492 (1995)
https://doi.org/10.1116/1.588379
Patterning accuracy improvement of the electron beam direct writing system EX‐8D
R. Yoshikawa; K. Hattori; H. Wada; S. Magoshi; H. Sunaoshi; A. Ando; T. Yamaguchi; S. Mikami; S. Nishimura; H. Housai; S. Hashimoto; T. Takigawa
J. Vac. Sci. Technol. B 13, 2493–2497 (1995)
https://doi.org/10.1116/1.588380
An electron‐beam microcolumn with improved resolution, beam current, and stability
J. Vac. Sci. Technol. B 13, 2498–2503 (1995)
https://doi.org/10.1116/1.588381
A background dose proximity effect correction technique for scattering with angular limitation projection electron lithography implemented in hardware
J. Vac. Sci. Technol. B 13, 2504–2507 (1995)
https://doi.org/10.1116/1.588382
Enhancing a hierarchical, parallel electron beam data conversion processor toward 1 Gbit memory lithography
K. Koyama; S. Watanabe; T. Saito; S. Hara; E. Murakami; S. Magoshi; K. Yano; H. Suzuki; A. Kabeya; S. Ohki; T. Fujii; S. Sakamoto
J. Vac. Sci. Technol. B 13, 2508–2513 (1995)
https://doi.org/10.1116/1.588383
Nanobeam process system: An ultrahigh vacuum electron beam lithography system with 3 nm probe size
J. Vac. Sci. Technol. B 13, 2514–2517 (1995)
https://doi.org/10.1116/1.588384
Proximity correction algorithms and a co‐processor based on regularized optimization. I. Description of the algorithm
J. Vac. Sci. Technol. B 13, 2518–2525 (1995)
https://doi.org/10.1116/1.588385
Three‐dimensional design in electron‐beam lithography
V. V. Aristov; S. V. Dubonos; R. Ya. Dyachenko; B. N. Gaifullin; V. N. Matveev; H. Raith; A. A. Svintsov; S. I. Zaitsev
J. Vac. Sci. Technol. B 13, 2526–2528 (1995)
https://doi.org/10.1116/1.588386
Electron beam lithography digital pattern generator and electronics for generalized curvilinear structures
J. Vac. Sci. Technol. B 13, 2529–2534 (1995)
https://doi.org/10.1116/1.588387
Precise measurement of the effective backscatter coefficient for 100‐keV electron‐beam lithography on Si
G. Patrick Watson; Steven D. Berger; J. Alex Liddle; Linus A. Fetter; Reginald C. Farrow; Regine G. Tarascon; Masis Mkrtchyan; Anthony E. Novembre; Myrtle I. Blakey; Kevin J. Bolan; Louis Poli
J. Vac. Sci. Technol. B 13, 2535–2538 (1995)
https://doi.org/10.1116/1.588388
In search of high‐performance resists for 50 kV shaped‐beam exposure
J. Vac. Sci. Technol. B 13, 2539–2544 (1995)
https://doi.org/10.1116/1.588389
The effects of electron‐ and ion‐beam irradiation on the mechanical response of silicon microresonators
J. Vac. Sci. Technol. B 13, 2545–2549 (1995)
https://doi.org/10.1116/1.588390
Characterization of a GaAs metal–semiconductor–metal low‐energy electron detector
J. Vac. Sci. Technol. B 13, 2556–2560 (1995)
https://doi.org/10.1116/1.588393
Damage characterization of ion beam exposed metal–oxide–semiconductor varactor cells by charge to breakdown measurements
J. Vac. Sci. Technol. B 13, 2561–2564 (1995)
https://doi.org/10.1116/1.588394
H2O enhanced focused ion beam micromachining
J. Vac. Sci. Technol. B 13, 2565–2569 (1995)
https://doi.org/10.1116/1.588395
Review of focused ion beam implantation mixing for the fabrication of GaAs‐based optoelectronic devices
J. Vac. Sci. Technol. B 13, 2570–2575 (1995)
https://doi.org/10.1116/1.588396
Control of temperature gradients and distortion of ion projection lithography masks
J. Vac. Sci. Technol. B 13, 2584–2587 (1995)
https://doi.org/10.1116/1.588028
Reactive ion etching of silicon stencil masks in the presence of an axial magnetic field
S. V. Pendharkar; J. C. Wolfe; H. R. Rampersad; Y.‐L. Chau; D. L. Licon; Mark D. Morgan; William E. Horne; R. C. Tiberio; J. N. Randall
J. Vac. Sci. Technol. B 13, 2588–2592 (1995)
https://doi.org/10.1116/1.588029
Focused ion beam/optical‐merged lithographic technique using ladder silicone spin‐on glass
J. Vac. Sci. Technol. B 13, 2593–2596 (1995)
https://doi.org/10.1116/1.588030
Study of H− beams for ion‐projection lithography
J. Vac. Sci. Technol. B 13, 2597–2599 (1995)
https://doi.org/10.1116/1.588031
Multicusp sources for ion beam lithography applications
K. N. Leung; P. Herz; W. B. Kunkel; Y. Lee; L. Perkins; D. Pickard; M. Sarstedt; M. Weber; M. D. Williams
J. Vac. Sci. Technol. B 13, 2600–2602 (1995)
https://doi.org/10.1116/1.588032
Focused ion‐beam line profiles: A study of some factors affecting beam broadening
J. Vac. Sci. Technol. B 13, 2603–2606 (1995)
https://doi.org/10.1116/1.588033
Distortion analysis of stencil masks with stress‐relief structures
J. Vac. Sci. Technol. B 13, 2613–2617 (1995)
https://doi.org/10.1116/1.588035
Low‐energy focused ion beam system and direct deposition of Au and Si
J. Vac. Sci. Technol. B 13, 2621–2624 (1995)
https://doi.org/10.1116/1.588037
Pattern positioning error of reticle writing induced by reticle clamping
Ryoichi Hirano; Kazuto Matsuki; Shusuke Yoshitake; Yoshihiko Takahashi; Shuichi Tamamushi; Yoji Ogawa; Toru Tojo
J. Vac. Sci. Technol. B 13, 2625–2628 (1995)
https://doi.org/10.1116/1.588038
Focused ion beam metrology
J. Vac. Sci. Technol. B 13, 2629–2636 (1995)
https://doi.org/10.1116/1.588039
Pattern width evaluation method for electron‐beam pattern data
J. Vac. Sci. Technol. B 13, 2637–2641 (1995)
https://doi.org/10.1116/1.588040
Adaptive metrology: An economical strategy for judging the acceptability of a mask pattern
J. Vac. Sci. Technol. B 13, 2642–2647 (1995)
https://doi.org/10.1116/1.588041
Immunity to signal degradation by overlayers using a novel spatial‐phase‐matching alignment system
J. Vac. Sci. Technol. B 13, 2648–2652 (1995)
https://doi.org/10.1116/1.588042
Miniature three‐axis micropositioner for scanning proximal probe and other applications
J. Vac. Sci. Technol. B 13, 2653–2656 (1995)
https://doi.org/10.1116/1.588043
Effect of multiple reflection of laser beam and pattern displacement on overlay accuracy in synchrotron radiation stepper
J. Vac. Sci. Technol. B 13, 2657–2659 (1995)
https://doi.org/10.1116/1.588044
Performance characteristics of a dual focus x‐ray alignment microscope
J. Vac. Sci. Technol. B 13, 2660–2664 (1995)
https://doi.org/10.1116/1.588045
Alignment scheme for through‐the‐lens alignment
J. Vac. Sci. Technol. B 13, 2665–2670 (1995)
https://doi.org/10.1116/1.588046
High accuracy thickness measurements by means of backscattering electron metrology
J. Vac. Sci. Technol. B 13, 2676–2681 (1995)
https://doi.org/10.1116/1.588048
Lithography and fabrication processes for sub‐100 nm scale complementary metal–oxide semiconductor
S. J. Wind; Y. Taur; Y. H. Lee; Y. Mii; R. G. Viswanathan; J. J. Bucchignano; A. T. Pomerene; R. M. Sicina; K. R. Milkove; J. W. Stiebritz; R. A. Roy; C. K. Hu; M. P. Manny; S. Cohen; W. Chen
J. Vac. Sci. Technol. B 13, 2688–2695 (1995)
https://doi.org/10.1116/1.588050
Fabrication of integrated micromachined electron guns
J. Vac. Sci. Technol. B 13, 2701–2704 (1995)
https://doi.org/10.1116/1.588052
Nanofabrication of subwavelength, binary, high‐efficiency diffractive optical elements in GaAs
J. Vac. Sci. Technol. B 13, 2705–2708 (1995)
https://doi.org/10.1116/1.588248
Fabrication of dry etched mirrors for In0.20Ga0.80As/GaAs waveguides using an electron cyclotron resonance source
J. Vac. Sci. Technol. B 13, 2709–2713 (1995)
https://doi.org/10.1116/1.588249
First‐order gain‐coupled (Ga,In)As/(Al,Ga)As distributed feedback lasers by focused ion beam implantation and in situ overgrowth
J. Vac. Sci. Technol. B 13, 2714–2717 (1995)
https://doi.org/10.1116/1.588250
Focused ion beam lithography of multiperiod gratings for a wavelength‐division‐multiplexed transmitter laser array
I. M. Templeton; M. Fallahi; L. E. Erickson; F. Chatenoud; E. S. Koteles; H. G. Champion; J. J. He; R. Barber
J. Vac. Sci. Technol. B 13, 2722–2724 (1995)
https://doi.org/10.1116/1.588252
Novel high‐yield trilayer resist process for 0.1 μm T‐gate fabrication
J. Vac. Sci. Technol. B 13, 2725–2728 (1995)
https://doi.org/10.1116/1.588253
Fabrication of diffractive optical elements using a single optical exposure with a gray level mask
J. Vac. Sci. Technol. B 13, 2729–2731 (1995)
https://doi.org/10.1116/1.588254
Achromatic interferometric lithography for 100‐nm‐period gratings and grids
J. Vac. Sci. Technol. B 13, 2732–2735 (1995)
https://doi.org/10.1116/1.588255
Fabrication of high aspect ratio structures for microchannel plates
J. Vac. Sci. Technol. B 13, 2736–2740 (1995)
https://doi.org/10.1116/1.588256
Combining and matching optical, electron‐beam, and x‐ray lithographies in the fabrication of Si complementary metal–oxide–semiconductor circuits with 0.1 and sub‐0.1 μm features
Isabel Y. Yang; Scott Silverman; Juan Ferrera; Keith Jackson; James M. Carter; Dimitri A. Antoniadis; Henry I. Smith
J. Vac. Sci. Technol. B 13, 2741–2744 (1995)
https://doi.org/10.1116/1.588257
Coherence of large gratings and electron‐beam fabrication techniques for atom‐wave interferometry
Michael J. Rooks; Richard C. Tiberio; Michael Chapman; Troy Hammond; Edward Smith; Alan Lenef; Richard Rubenstein; David Pritchard; Scott Adams
J. Vac. Sci. Technol. B 13, 2745–2751 (1995)
https://doi.org/10.1116/1.588258
Fabrication of InP/InGaAs quantum wires by free Cl2
J. Vac. Sci. Technol. B 13, 2752–2756 (1995)
https://doi.org/10.1116/1.588259
Sub‐10 nm lithography and development properties of inorganic resist by scanning electron beams
J. Vac. Sci. Technol. B 13, 2757–2761 (1995)
https://doi.org/10.1116/1.588260
Low‐distortion electron‐beam lithography for fabrication of high‐resolution germanium and tantalum zone plates
J. Vac. Sci. Technol. B 13, 2762–2766 (1995)
https://doi.org/10.1116/1.588261
Variable shaped electron‐beam lithography application to subwavelength and computer generated diffractive optics fabrication
J. Vac. Sci. Technol. B 13, 2767–2771 (1995)
https://doi.org/10.1116/1.588262
In situ processing of high‐Tc YBaCuO superconducting devices by focused ion beam micromachining at low temperature
G. Ben Assayag; J. Gierak; J. F. Hamet; C. Prouteau; S. Flament; C. Dolabdjian; F. Gire; E. Lesquey; G. Günther; C. Dubuc; D. Bloyet; D. Robbes
J. Vac. Sci. Technol. B 13, 2772–2776 (1995)
https://doi.org/10.1116/1.588263
Nanometer‐scale pattern formation of GaAs by in situ electron‐beam lithography using surface oxide layer as a resist film
J. Vac. Sci. Technol. B 13, 2777–2780 (1995)
https://doi.org/10.1116/1.588264
Nanostructuring of gold electrodes for immunosensing applications
J. Vac. Sci. Technol. B 13, 2781–2786 (1995)
https://doi.org/10.1116/1.588265
Study of large area high density magnetic dot arrays fabricated using synchrotron radiation based x‐ray lithography
F. Rousseaux; D. Decanini; F. Carcenac; E. Cambril; M. F. Ravet; C. Chappert; N. Bardou; B. Bartenlian; P. Veillet
J. Vac. Sci. Technol. B 13, 2787–2791 (1995)
https://doi.org/10.1116/1.588266
Fabrication of CdZnSe/ZnSe quantum dots and quantum wires by electron beam lithography and wet chemical etching
J. Vac. Sci. Technol. B 13, 2792–2796 (1995)
https://doi.org/10.1116/1.588267
Resist planarization over topography using ion implantation
J. Vac. Sci. Technol. B 13, 2797–2800 (1995)
https://doi.org/10.1116/1.588268
Fabrication of silicon nanostructures with a poly(methylmethacrylate) single‐layer process
J. Vac. Sci. Technol. B 13, 2801–2804 (1995)
https://doi.org/10.1116/1.588269
Mechanisms of surface anodization produced by scanning probe microscopes
J. Vac. Sci. Technol. B 13, 2805–2808 (1995)
https://doi.org/10.1116/1.588270
Cross‐linked polymers for nanofabrication of high‐resolution zone plates in nickel and germanium
J. Vac. Sci. Technol. B 13, 2809–2812 (1995)
https://doi.org/10.1116/1.588271
Fabrication of nanostructures using scanning probe microscopes
J. Vac. Sci. Technol. B 13, 2813–2818 (1995)
https://doi.org/10.1116/1.588272
Direct observation of a vacuum tunnel gap in a tunneling microscope using a transmission electron microscope
J. Vac. Sci. Technol. B 13, 2819–2822 (1995)
https://doi.org/10.1116/1.588273
Nanolithography using a laser focused neutral atom beam
J. Vac. Sci. Technol. B 13, 2823–2827 (1995)
https://doi.org/10.1116/1.588274
Nanometer‐scale recording, erasing, and reproducing using scanning tunneling microscopy
J. Vac. Sci. Technol. B 13, 2832–2836 (1995)
https://doi.org/10.1116/1.588299
Ambient scanning tunneling lithography of Langmuir–Blodgett and self‐assembled monolayers
J. Vac. Sci. Technol. B 13, 2837–2840 (1995)
https://doi.org/10.1116/1.588300
Spectroscopic characterization of self‐assembled organosilane monolayer films
J. Vac. Sci. Technol. B 13, 2841–2845 (1995)
https://doi.org/10.1116/1.588301
Nanostructuring of alkanethiols with ultrasharp field emitters
J. Vac. Sci. Technol. B 13, 2846–2849 (1995)
https://doi.org/10.1116/1.588302
Fabrication of planar quantum magnetic disk structure using electron beam lithography, reactive ion etching, and chemical mechanical polishing
J. Vac. Sci. Technol. B 13, 2850–2852 (1995)
https://doi.org/10.1116/1.588303
Distributed Bragg grating integrated‐optical filters: Synthesis and fabrication
J. Vac. Sci. Technol. B 13, 2859–2864 (1995)
https://doi.org/10.1116/1.588305
Single electron and hole quantum dot transistors operating above 110 K
J. Vac. Sci. Technol. B 13, 2865–2868 (1995)
https://doi.org/10.1116/1.588306
Fabrication of microstructures for studies of electromigration in sub‐0.25 μm metal interconnections
J. Vac. Sci. Technol. B 13, 2869–2874 (1995)
https://doi.org/10.1116/1.588307
Fabrication of nanostructures with submicron Schottky and ohmic contacts
J. Vac. Sci. Technol. B 13, 2875–2878 (1995)
https://doi.org/10.1116/1.588308
Fabrication and properties of visible‐light subwavelength amorphous silicon transmission gratings
J. Vac. Sci. Technol. B 13, 2879–2882 (1995)
https://doi.org/10.1116/1.588309
InGaAs/GaAs quantum wires and dots defined by low‐voltage electron‐beam lithography
J. Vac. Sci. Technol. B 13, 2888–2891 (1995)
https://doi.org/10.1116/1.588311
Technology for high‐performance n‐channel SiGe modulation‐doped field‐effect transistors
J. Vac. Sci. Technol. B 13, 2892–2896 (1995)
https://doi.org/10.1116/1.588312
Effects of resist thickness and thin‐film interference in I‐line and deep ultraviolet optical lithography
J. Vac. Sci. Technol. B 13, 2897–2903 (1995)
https://doi.org/10.1116/1.588275
Field distortion characterization using linewidth or pitch measurement
J. Vac. Sci. Technol. B 13, 2904–2908 (1995)
https://doi.org/10.1116/1.588276
Phase‐measuring interferometry using extreme ultraviolet radiation
J. Vac. Sci. Technol. B 13, 2919–2922 (1995)
https://doi.org/10.1116/1.588279
Progress towards λ/20 extreme ultraviolet interferometry
K. A. Goldberg; R. Beguiristain; J. Bokor; H. Medecki; D. T. Attwood; K. Jackson; E. Tejnil; G. E. Sommargren
J. Vac. Sci. Technol. B 13, 2923–2927 (1995)
https://doi.org/10.1116/1.588280
Effect of thin film interference on process latitude in deep ultraviolet lithography
J. Vac. Sci. Technol. B 13, 2928–2933 (1995)
https://doi.org/10.1116/1.588281
Application of ultraviolet depth lithography for surface micromachining
J. Vac. Sci. Technol. B 13, 2934–2939 (1995)
https://doi.org/10.1116/1.588282
Fabrication of a variable diffraction efficiency phase mask by multiple dose ion implantation
L. E. Erickson; H. G. Champion; J. Albert; K. O. Hill; B. Malo; S. Thériault; F. Bilodeau; D. C. Johnson
J. Vac. Sci. Technol. B 13, 2940–2943 (1995)
https://doi.org/10.1116/1.588283
Role of etch pattern fidelity in the printing of optical proximity corrected photomasks
J. Vac. Sci. Technol. B 13, 2944–2948 (1995)
https://doi.org/10.1116/1.588284
Lithographic evaluation of the hydrogenated amorphous carbon film
J. Vac. Sci. Technol. B 13, 2949–2953 (1995)
https://doi.org/10.1116/1.588285
Asymmetric overhung resist profile fabricated by optical lithography
J. Vac. Sci. Technol. B 13, 2954–2956 (1995)
https://doi.org/10.1116/1.588286
Reaction‐diffusion modeling and simulations in positive deep ultraviolet resists
J. Vac. Sci. Technol. B 13, 2957–2962 (1995)
https://doi.org/10.1116/1.588287
Novel postexposure bake simulator: First results
J. Vac. Sci. Technol. B 13, 2963–2967 (1995)
https://doi.org/10.1116/1.588288
Highly sensitive positive resist based on vinyl ether chemistry
J. Vac. Sci. Technol. B 13, 2972–2974 (1995)
https://doi.org/10.1116/1.588290
Lithographic evaluation of a positive‐acting chemically amplified resist system under conventional and projection electron‐beam exposures
R. G. Tarascon; A. E. Novembre; K. Bolan; M. Blakey; C. Knurek; L. Fetter; H. A. Huggins; J. A. Liddle; O. Nalamasu
J. Vac. Sci. Technol. B 13, 2975–2979 (1995)
https://doi.org/10.1116/1.588291
Studies of 1 and 2 keV electron beam lithography using silicon containing P(SI–CMS) resist
J. Vac. Sci. Technol. B 13, 2980–2985 (1995)
https://doi.org/10.1116/1.588292
Use of positive and negative chemically amplified resists in electron‐beam direct‐write lithography
J. Vac. Sci. Technol. B 13, 2986–2993 (1995)
https://doi.org/10.1116/1.588293
Application of plasma polymerized methylsilane resist for all‐dry 193 nm deep ultraviolet processing
J. Vac. Sci. Technol. B 13, 2994–2999 (1995)
https://doi.org/10.1116/1.588294
Thick film positive photoresist: Development and resolution enhancement technique
Dennis R. McKean; Thomas P. Russell; William D. Hinsberg; Don Hofer; Alfred F. Renaldo; C. Grant Willson
J. Vac. Sci. Technol. B 13, 3000–3006 (1995)
https://doi.org/10.1116/1.588295
Optically matched trilevel resist process for nanostructure fabrication
J. Vac. Sci. Technol. B 13, 3007–3011 (1995)
https://doi.org/10.1116/1.588296
Micromachining applications of a high resolution ultrathick photoresist
J. Vac. Sci. Technol. B 13, 3012–3016 (1995)
https://doi.org/10.1116/1.588297
Profile control in dry development of high‐aspect‐ratio resist structures
J. Vac. Sci. Technol. B 13, 3017–3021 (1995)
https://doi.org/10.1116/1.588313
Reaction modeling of chemically amplified resists for ArF excimer laser lithography
J. Vac. Sci. Technol. B 13, 3022–3025 (1995)
https://doi.org/10.1116/1.588314
Photoacid bulkiness effect on dissolution kinetics in chemically amplified deep ultraviolet resists
J. Vac. Sci. Technol. B 13, 3026–3029 (1995)
https://doi.org/10.1116/1.588315
An advanced epoxy novolac resist for fast high‐resolution electron‐beam lithography
J. Vac. Sci. Technol. B 13, 3030–3034 (1995)
https://doi.org/10.1116/1.588316
A study of the effect of ultrasonic agitation during development of poly(methylmethacrylate) for ultrahigh resolution electron‐beam lithography
J. Vac. Sci. Technol. B 13, 3035–3039 (1995)
https://doi.org/10.1116/1.588317
Fabrication of 0.2 μm large scale integrated circuits using synchrotron radiation x‐ray lithography
J. Vac. Sci. Technol. B 13, 3040–3045 (1995)
https://doi.org/10.1116/1.588318
The effect of aperturing on radiation damage‐induced pattern distortion of x‐ray masks
D. J. Resnick; K. D. Cummings; W. J. Dauksher; W. A. Johnson; P. A. Seese; H. T. H. Chen; G. M. Wells; R. Engelstad; F. Cerrina
J. Vac. Sci. Technol. B 13, 3046–3049 (1995)
https://doi.org/10.1116/1.588319
Thermal analysis of an x‐ray mask membrane in a plasma environment
J. Vac. Sci. Technol. B 13, 3050–3054 (1995)
https://doi.org/10.1116/1.588320
Evaluation of a diamond‐based x‐ray mask for high resolution x‐ray proximity lithography
M. F. Ravet; F. Rousseaux; Y. Chen; A. M. Haghiri‐Gosnet; F. Carcenac; D. Decanini; J. Bourneix; H. Launois; P. K. Bachmann; H. Lade; D. U. Wiechert; H. Wilson
J. Vac. Sci. Technol. B 13, 3055–3060 (1995)
https://doi.org/10.1116/1.588321
A novel technique for high aspect ratio high resolution patterning of membranes
J. Vac. Sci. Technol. B 13, 3061–3065 (1995)
https://doi.org/10.1116/1.588322
Fabrication of sub‐30 nm masks for x‐ray nanolithography
J. Vac. Sci. Technol. B 13, 3066–3069 (1995)
https://doi.org/10.1116/1.588323
Radiation damage‐induced changes in silicon nitride membrane mechanical properties
J. Vac. Sci. Technol. B 13, 3075–3077 (1995)
https://doi.org/10.1116/1.588325
Processing control for 0.25 μm x‐ray exposures of commercially available resists: The potential for adaptive control
James W. Taylor; Chris Gamsky; Steve Rhyner; Glenn Howes; Paul Dentinger; Carla Nelson; Cheng Yang; Michael Reilly
J. Vac. Sci. Technol. B 13, 3078–3081 (1995)
https://doi.org/10.1116/1.588326
Printability of substrate and absorber defects on extreme ultraviolet lithographic masks
J. Vac. Sci. Technol. B 13, 3082–3088 (1995)
https://doi.org/10.1116/1.588327
Alignment of a multilayer‐coated imaging system using extreme ultraviolet Foucault and Ronchi interferometric testing
J. Vac. Sci. Technol. B 13, 3089–3093 (1995)
https://doi.org/10.1116/1.588328
Effect of absorber thickness on image shortening in x‐ray lithography
J. Vac. Sci. Technol. B 13, 3094–3098 (1995)
https://doi.org/10.1116/1.588329
High synchrotron radiation durability microwave plasma chemical vapor deposition diamond x‐ray mask membrane
J. Vac. Sci. Technol. B 13, 3099–3102 (1995)
https://doi.org/10.1116/1.588330
Method for fabricating a low stress x‐ray mask using annealable amorphous refractory compounds
W. J. Dauksher; D. J. Resnick; K. D. Cummings; J. Baker; R. B. Gregory; N. D. Theodore; J. A. Chan; W. A. Johnson; C. J. Mogab; M.‐A. Nicolet; J. S. Reid
J. Vac. Sci. Technol. B 13, 3103–3108 (1995)
https://doi.org/10.1116/1.588331
X‐ray exposure system for induced chemistry and dry processes in microlithography
J. Vac. Sci. Technol. B 13, 3109–3113 (1995)
https://doi.org/10.1116/1.588332
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.