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September 1995
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Scanning probe anodization: Patterning of hydrogen‐terminated silicon surfaces for the nanofabrication of gold structures by electroless plating
J. Vac. Sci. Technol. B 13, 1933–1937 (1995)
https://doi.org/10.1116/1.588111
Volume increase phenomena in reciprocal scratching of polycarbonate studied by atomic force microscopy
J. Vac. Sci. Technol. B 13, 1938–1944 (1995)
https://doi.org/10.1116/1.588112
Conducting atomic force microscopy study of silicon dioxide breakdown
J. Vac. Sci. Technol. B 13, 1945–1952 (1995)
https://doi.org/10.1116/1.588113
Real‐time extraction of growth rates from rotating substrates during molecular‐beam epitaxy
J. Vac. Sci. Technol. B 13, 1953–1959 (1995)
https://doi.org/10.1116/1.588114
Heating and failure of niobium tip cathodes due to a high‐density pulsed field electron emission currenta)
J. Vac. Sci. Technol. B 13, 1960–1967 (1995)
https://doi.org/10.1116/1.588115
Fabrication of double‐gated Si field emitter arrays for focused electron beam generation
J. Vac. Sci. Technol. B 13, 1968–1972 (1995)
https://doi.org/10.1116/1.588116
Field emitter array mask patterning using laser interference lithography
J. Vac. Sci. Technol. B 13, 1973–1978 (1995)
https://doi.org/10.1116/1.588117
Lithography using electron beam induced etching of a carbon film
J. Vac. Sci. Technol. B 13, 1984–1987 (1995)
https://doi.org/10.1116/1.588119
Charging effects in plasma immersion ion implantation for microelectronics
J. Vac. Sci. Technol. B 13, 1994–1998 (1995)
https://doi.org/10.1116/1.588121
Charge build‐up reduction during biased electron cyclotron resonance plasma deposition
J. Vac. Sci. Technol. B 13, 2004–2007 (1995)
https://doi.org/10.1116/1.588123
Selective reactive ion etching of silicon nitride over silicon using CHF3 with N2 addition
J. Vac. Sci. Technol. B 13, 2008–2012 (1995)
https://doi.org/10.1116/1.588124
Metal–insulator–metal capacitors by using electron cyclotron resonance plasma‐SiO2
J. Vac. Sci. Technol. B 13, 2013–2015 (1995)
https://doi.org/10.1116/1.588125
High rate electron cyclotron resonance etching of GaN, InN, and AlN
J. Vac. Sci. Technol. B 13, 2016–2021 (1995)
https://doi.org/10.1116/1.588126
Etching of GaAs/AlGaAs rib waveguide structures using BCl3/Cl2/N2/Ar electron cyclotron resonance
C. Constantine; R. J. Shul; C. T. Sullivan; M. B. Snipes; G. B. McClellan; M. Hafich; C. T. Fuller; J. R. Mileham; S. J. Pearton
J. Vac. Sci. Technol. B 13, 2025–2030 (1995)
https://doi.org/10.1116/1.588128
Ion sputtering of GaAs(110): From individual bombardment events to multilayer removal
J. Vac. Sci. Technol. B 13, 2031–2040 (1995)
https://doi.org/10.1116/1.588129
Arsenic cap layer desorption and the formation of GaAs(001)c(4×4) surfaces
J. Vac. Sci. Technol. B 13, 2041–2048 (1995)
https://doi.org/10.1116/1.588130
Growth of very low deep impurity density (Nt<5×1011 cm−3) InxGa1−xP on GaAs by metalorganic chemical vapor deposition
J. Vac. Sci. Technol. B 13, 2049–2052 (1995)
https://doi.org/10.1116/1.588131
Surface topography and composition of InP(100) after various sulfur passivation treatments
J. Vac. Sci. Technol. B 13, 2053–2056 (1995)
https://doi.org/10.1116/1.588132
Intrinsic asymmetry between the [011] and [011̄] crystallographic directions in the In0.52Al0.48As/InP matched system
J. Vac. Sci. Technol. B 13, 2057–2063 (1995)
https://doi.org/10.1116/1.588133
Higher mobility of charge carriers in InAs/GaAs superlattices through the elimination of InGaAs alloy disorders on GaAs
J. Vac. Sci. Technol. B 13, 2064–2068 (1995)
https://doi.org/10.1116/1.588134
Investigation of n‐ and p‐type doping of GaN during epitaxial growth in a mass production scale multiwafer‐rotating‐disk reactor
C. Yuan; T. Salagaj; A. Gurary; A. G. Thompson; W. Kroll; R. A. Stall; C.‐Y. Hwang; M. Schurman; Y. Li; W. E. Mayo; Y. Lu; S. Krishnankutty; I. K. Shmagin; R. M. Kolbas; S. J. Pearton
J. Vac. Sci. Technol. B 13, 2075–2080 (1995)
https://doi.org/10.1116/1.588080
Metallurgy of Al–Ni–Ge ohmic contact formation on n‐GaAs
J. Vac. Sci. Technol. B 13, 2081–2091 (1995)
https://doi.org/10.1116/1.588081
Thermal stability of MoAu and TiPtAu nonalloyed InGaAs contacts
J. Vac. Sci. Technol. B 13, 2092–2099 (1995)
https://doi.org/10.1116/1.588082
Simulation of electromigration in thin‐film diffusion barriers by the transmission line matrix method
J. Vac. Sci. Technol. B 13, 2100–2104 (1995)
https://doi.org/10.1116/1.588083
Chemical vapor deposition TiN process for contact/via barrier applications
J. Vac. Sci. Technol. B 13, 2105–2114 (1995)
https://doi.org/10.1116/1.588084
Preparation and characterization of epitaxial gold films deposited on mica by direct current magnetron sputtering
J. Vac. Sci. Technol. B 13, 2119–2123 (1995)
https://doi.org/10.1116/1.588086
Ultrasound effects on the tribological properties of synthesized diamond films
J. Vac. Sci. Technol. B 13, 2124–2129 (1995)
https://doi.org/10.1116/1.588087
Extremely low resistance Au/Mn/Ni/Au ohmic contact to p‐GaAs*
J. Vac. Sci. Technol. B 13, 2130–2133 (1995)
https://doi.org/10.1116/1.588088
Electrical characteristics of metal/n‐InSb contacts with InSb annealed rapidly prior to metal evaporation
J. Vac. Sci. Technol. B 13, 2134–2136 (1995)
https://doi.org/10.1116/1.588089
Fabrication of silicon quantum wires by anisotropic wet chemical etching and thermal oxidation
J. Vac. Sci. Technol. B 13, 2137–2138 (1995)
https://doi.org/10.1116/1.588090
Study of the electrical active defects induced by reactive ion etching in n‐type silicon
J. Vac. Sci. Technol. B 13, 2139–2141 (1995)
https://doi.org/10.1116/1.588091
A novel design for a small retractable cylindrical mirror analyzer
J. Vac. Sci. Technol. B 13, 2142–2144 (1995)
https://doi.org/10.1116/1.588092
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.