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May 1995
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Nanometer lithography on silicon and hydrogenated amorphous silicon with low energy electrons
J. Vac. Sci. Technol. B 13, 805–811 (1995)
https://doi.org/10.1116/1.587858
Resists and processes for 1 kV electron beam microcolumn lithography
J. Vac. Sci. Technol. B 13, 812–820 (1995)
https://doi.org/10.1116/1.587859
Effects of heavy atoms added into a resist on energy absorption in x‐ray lithography
J. Vac. Sci. Technol. B 13, 821–825 (1995)
https://doi.org/10.1116/1.587860
Effect of remaining solvent on sensitivity, diffusion of acid, and resolution in chemical amplification resists
J. Vac. Sci. Technol. B 13, 833–839 (1995)
https://doi.org/10.1116/1.588193
Pattern recognition of trench width using a confocal microscope
J. Vac. Sci. Technol. B 13, 840–847 (1995)
https://doi.org/10.1116/1.588194
Algorithm method of correlation position for automatic alignment in microcircuit fabrication
J. Vac. Sci. Technol. B 13, 858–861 (1995)
https://doi.org/10.1116/1.588196
Low‐pressure plasma deposition of photosensitive organosilicon polymers
J. Vac. Sci. Technol. B 13, 862–864 (1995)
https://doi.org/10.1116/1.588197
Adsorption and decomposition of diethyldiethoxysilane on silicon surfaces: New possibilities for SiO2 deposition
J. Vac. Sci. Technol. B 13, 865–875 (1995)
https://doi.org/10.1116/1.588198
Characterization of thin SiN film formed with electron cyclotron resonance nitrogen plasma
J. Vac. Sci. Technol. B 13, 876–880 (1995)
https://doi.org/10.1116/1.588199
Improvements in the wavelength stability of evaporated TiO2/SiO2 anti‐reflection coatings by ion assistance*
J. Vac. Sci. Technol. B 13, 881–888 (1995)
https://doi.org/10.1116/1.588200
Estimation of charge buildup during plasma processing by measuring metal–oxide thickness
J. Vac. Sci. Technol. B 13, 889–894 (1995)
https://doi.org/10.1116/1.588201
Optimization of reactive ion etching of Al0.48In0.52As in CH4/H2 by the experimental design method
J. Vac. Sci. Technol. B 13, 895–901 (1995)
https://doi.org/10.1116/1.588202
Silicon surface cleaning by oxidation with electron cyclotron resonance oxygen plasma after contact hole dry etching
J. Vac. Sci. Technol. B 13, 902–907 (1995)
https://doi.org/10.1116/1.588203
Low‐temperature in situ cleaning of silicon (100) surface by electron cyclotron resonance hydrogen plasma
Heung‐Sik Tae; Sang‐June Park; Seok‐Hee Hwang; Ki‐Hyun Hwang; Euijoon Yoon; Ki‐Woong Whang; Se Ahn Song
J. Vac. Sci. Technol. B 13, 908–913 (1995)
https://doi.org/10.1116/1.588204
Effect of CO and CO2 addition to the CF4/O2 gas system on the etching of a low‐pressure chemical vapor deposition tungsten film
J. Vac. Sci. Technol. B 13, 914–917 (1995)
https://doi.org/10.1116/1.588205
Tungsten plug etchback and substrate damage measured by atomic force microscopy
J. Vac. Sci. Technol. B 13, 918–922 (1995)
https://doi.org/10.1116/1.588206
Characterization of sidewall defects in selective epitaxial growth of silicon
J. Vac. Sci. Technol. B 13, 923–927 (1995)
https://doi.org/10.1116/1.588207
Characterization and modeling of sidewall defects in selective epitaxial growth of silicon
J. Vac. Sci. Technol. B 13, 928–935 (1995)
https://doi.org/10.1116/1.588208
Effects of synchrotron radiation irradiation on selective Si epitaxial growth by disilane molecular beam epitaxy
J. Vac. Sci. Technol. B 13, 936–940 (1995)
https://doi.org/10.1116/1.588209
Nanometer‐size surface features produced by single, low energy, highly charged ions
J. Vac. Sci. Technol. B 13, 941–948 (1995)
https://doi.org/10.1116/1.588210
Nanostructure of thin metal films on silicon(111) investigated by x‐ray photoelectron spectroscopy: Inelastic peak shape analysis
J. Vac. Sci. Technol. B 13, 949–953 (1995)
https://doi.org/10.1116/1.588211
In situ diode laser absorption measurements of plasma species in a gaseous electronics conference reference cell reactor
J. Vac. Sci. Technol. B 13, 954–961 (1995)
https://doi.org/10.1116/1.588212
Low‐damage specimen preparation technique for transmission electron microscopy using iodine gas‐assisted focused ion beam milling
J. Vac. Sci. Technol. B 13, 962–966 (1995)
https://doi.org/10.1116/1.588213
Fabrication of InGaAs/InP avalanche photodiodes by reactive ion etching using CH4/H2 gases
Chan‐Yong Park; Ji‐Beom Yoo; Chongdae Park; Kyung‐Sook Hyun; Dae‐Kon Oh; Yong Hee Lee; Choochon Lee; Hyung‐Moo Park
J. Vac. Sci. Technol. B 13, 974–977 (1995)
https://doi.org/10.1116/1.588215
Growth of InGaAsSb layers in the miscibility gap: Use of very‐low‐energy ion irradiation to reduce alloy decomposition
J. Vac. Sci. Technol. B 13, 978–987 (1995)
https://doi.org/10.1116/1.588216
Size‐dependent photoluminescence energy and intensity of selective electron cyclotron resonance‐etched strained InGaAs/GaAs quantum boxes
J. Vac. Sci. Technol. B 13, 995–999 (1995)
https://doi.org/10.1116/1.588218
GaAs heteroepitaxial growth on Si substrates with thin Si interlayers in situ annealed at high temperatures
J. Vac. Sci. Technol. B 13, 1000–1005 (1995)
https://doi.org/10.1116/1.587892
Composition inhomogeneities in the buffer layers of In0.52Al0.48As/InxGa1−xAs/InP multiquantum well structures driven by In segregation
J. Vac. Sci. Technol. B 13, 1006–1009 (1995)
https://doi.org/10.1116/1.587893
Investigation of modulation‐doped GaAs/AlGaAs single quantum well by photoreflectance
J. Vac. Sci. Technol. B 13, 1010–1013 (1995)
https://doi.org/10.1116/1.587894
Novel WSi/Au T‐shaped gate GaAs metal–semiconductor field‐effect‐transistor fabrication process for super low‐noise microwave monolithic integrated circuit amplifiers
H. Takano; K. Hosogi; T. Kato; T. Oku; Y. Kohno; H. Nakano; K. Sato; M. Funada; O. Ishihara; N. Tsubouchi
J. Vac. Sci. Technol. B 13, 1014–1017 (1995)
https://doi.org/10.1116/1.587895
Effect of ultrahigh nucleation density on diamond growth at different growth rates and temperatures
J. Vac. Sci. Technol. B 13, 1030–1036 (1995)
https://doi.org/10.1116/1.587898
Energy broadening by Coulomb interactions of an electron beam emitted from a point source
J. Vac. Sci. Technol. B 13, 1037–1043 (1995)
https://doi.org/10.1116/1.587899
Characterization of latent image by surface energy determined by contact angle measurements
J. Vac. Sci. Technol. B 13, 1055–1057 (1995)
https://doi.org/10.1116/1.587902
Effect of an Al2O3 interlayer on linewidth control in electron beam writing on tungsten substrates
J. Vac. Sci. Technol. B 13, 1058–1060 (1995)
https://doi.org/10.1116/1.587903
Thermal contraction of ultrahigh vacuum materials for scanning probe microscopy from 300 to 4 K
J. Vac. Sci. Technol. B 13, 1063–1065 (1995)
https://doi.org/10.1116/1.587905
Low temperature scanning tunneling microscopy studies of granular metal films
J. Vac. Sci. Technol. B 13, 1084–1088 (1995)
https://doi.org/10.1116/1.587907
Physical and magnetic properties of submicron lithographically patterned magnetic islands
J. Vac. Sci. Technol. B 13, 1089–1094 (1995)
https://doi.org/10.1116/1.587908
Domain structure and polarization reversal in ferroelectrics studied by atomic force microscopy
J. Vac. Sci. Technol. B 13, 1095–1099 (1995)
https://doi.org/10.1116/1.587909
Dimensional metrology with scanning probe microscopes
J. Vac. Sci. Technol. B 13, 1100–1105 (1995)
https://doi.org/10.1116/1.587910
Optical probe microscope for nondestructive metrology of large sample surfaces
J. Vac. Sci. Technol. B 13, 1106–1111 (1995)
https://doi.org/10.1116/1.587911
Step height measurement using a scanning tunneling microscope equipped with a crystalline lattice reference and interferometer
J. Vac. Sci. Technol. B 13, 1112–1114 (1995)
https://doi.org/10.1116/1.587912
Simulation of atomic force microscope tip–sample/sample–tip reconstruction
J. Vac. Sci. Technol. B 13, 1115–1118 (1995)
https://doi.org/10.1116/1.587913
Application of lead zirconate titanate thin film displacement sensors for the atomic force microscope
J. Vac. Sci. Technol. B 13, 1119–1122 (1995)
https://doi.org/10.1116/1.587914
Development of highly conductive cantilevers for atomic force microscopy point contact measurements
J. Vac. Sci. Technol. B 13, 1123–1125 (1995)
https://doi.org/10.1116/1.588221
High‐temperature structural stability of MoSi2‐based nanolayer composites
J. Vac. Sci. Technol. B 13, 1126–1129 (1995)
https://doi.org/10.1116/1.588222
Novel method for producing nanostructures in silicon inversion layers
J. Vac. Sci. Technol. B 13, 1135–1138 (1995)
https://doi.org/10.1116/1.588224
Pattern transfer of electron beam modified self‐assembled monolayers for high‐resolution lithography
J. Vac. Sci. Technol. B 13, 1139–1143 (1995)
https://doi.org/10.1116/1.588225
Carrier capture as a mechanism for defect migration at semiconductor surfaces
J. Vac. Sci. Technol. B 13, 1144–1149 (1995)
https://doi.org/10.1116/1.588226
Structure and electronic states on reduced SrTiO3(110) surface observed by scanning tunneling microscopy and spectroscopy
J. Vac. Sci. Technol. B 13, 1150–1154 (1995)
https://doi.org/10.1116/1.588227
Atomistic modeling of imaging of ionic surfaces with a scanning force microscope
J. Vac. Sci. Technol. B 13, 1155–1162 (1995)
https://doi.org/10.1116/1.588228
Local modification of elastic properties of polystyrene–polyethyleneoxide blend surfaces
J. Vac. Sci. Technol. B 13, 1163–1166 (1995)
https://doi.org/10.1116/1.588229
Characterization of zinc sulfide nanoclusters via atomic force and scanning tunneling microscopy
J. Vac. Sci. Technol. B 13, 1167–1171 (1995)
https://doi.org/10.1116/1.588230
Characterization of exfoliated TaS2 thin films and the existence of charge density waves
J. Vac. Sci. Technol. B 13, 1172–1177 (1995)
https://doi.org/10.1116/1.588231
Spectral and structural features of porous silicon prepared by chemical and electrochemical etching processes
J. Vac. Sci. Technol. B 13, 1184–1189 (1995)
https://doi.org/10.1116/1.588233
Theoretical study of nanoclusters at ionic surfaces: Properties of (NaCl)n clusters (n=1–48) at the (100) MgO surface
J. Vac. Sci. Technol. B 13, 1190–1197 (1995)
https://doi.org/10.1116/1.588234
Atomic force microscopy of Au implanted in sapphire
D. O. Henderson; R. Mu; Y. S. Tung; M. A. George; A. Burger; S. H. Morgan; C. W. White; R. A. Zuhr; R. H. Magruder
J. Vac. Sci. Technol. B 13, 1198–1202 (1995)
https://doi.org/10.1116/1.588235
Scanning tunneling microscopy study of intermediates in the dissociative adsorption of closo‐1,2‐dicarbadodecaborane on Si(111)
J. Vac. Sci. Technol. B 13, 1203–1206 (1995)
https://doi.org/10.1116/1.588236
Nanometer‐scale observations of the corroded surfaces of metallic glass Fe40Ni38Mo4B18
J. Vac. Sci. Technol. B 13, 1207–1211 (1995)
https://doi.org/10.1116/1.588237
Atomic‐scale modification on Si(111)7×7 surfaces
J. Vac. Sci. Technol. B 13, 1212–1215 (1995)
https://doi.org/10.1116/1.588238
Scanning tunneling microscopy induced local deposition of Si or SiHx on Si(111)‐(7×7)
J. Vac. Sci. Technol. B 13, 1216–1220 (1995)
https://doi.org/10.1116/1.588239
Properties of ultrathin films of porous silicon
J. Vac. Sci. Technol. B 13, 1225–1229 (1995)
https://doi.org/10.1116/1.588241
Enhancement and suppression of the formation of porous silicon
J. Vac. Sci. Technol. B 13, 1230–1235 (1995)
https://doi.org/10.1116/1.588242
Structure and electrical properties of Ag‐ultrafine‐particle–polymer thin films
J. Vac. Sci. Technol. B 13, 1242–1246 (1995)
https://doi.org/10.1116/1.588244
Nanometer‐scale modifications of gold surfaces by scanning tunneling microscope
J. Vac. Sci. Technol. B 13, 1252–1256 (1995)
https://doi.org/10.1116/1.588246
Nanoscale layer removal of metal surfaces by scanning probe microscope scratching
J. Vac. Sci. Technol. B 13, 1257–1260 (1995)
https://doi.org/10.1116/1.588247
Structural analysis of domain boundaries on Si(111)7×7 surfaces by scanning tunneling microscope
J. Vac. Sci. Technol. B 13, 1261–1264 (1995)
https://doi.org/10.1116/1.587834
Atomically resolved image of cleaved surfaces of compound semiconductors observed with an ultrahigh vacuum atomic force microscope
J. Vac. Sci. Technol. B 13, 1265–1267 (1995)
https://doi.org/10.1116/1.587835
Electrochemical formation of Se atomic layers on Au(100)
J. Vac. Sci. Technol. B 13, 1268–1273 (1995)
https://doi.org/10.1116/1.587836
Effects of stimulated adsorption in scanning tunneling microscopy investigation of Si surface in ambient air
J. Vac. Sci. Technol. B 13, 1274–1279 (1995)
https://doi.org/10.1116/1.587837
Electrical and mechanical properties of metallic nanowires: Conductance quantization and localization
J. I. Pascual; J. Méndez; J. Gómez‐Herrero; A. M. Baró; N. Garcia; Uzi Landman; W. D. Luedtke; E. N. Bogachek; H.‐P. Cheng
J. Vac. Sci. Technol. B 13, 1280–1284 (1995)
https://doi.org/10.1116/1.587838
Fabrication and transport measurements of atomic force microscope modified silicon metal–oxide–semiconductor field‐effect transistors
J. Vac. Sci. Technol. B 13, 1285–1289 (1995)
https://doi.org/10.1116/1.587839
Nanolithographic patterning of Au films with a scanning tunneling microscope
J. Vac. Sci. Technol. B 13, 1290–1293 (1995)
https://doi.org/10.1116/1.587840
Scanning probe lithography of novel Langmuir–Schaefer films: Electrochemical applications
J. Vac. Sci. Technol. B 13, 1294–1299 (1995)
https://doi.org/10.1116/1.587841
Fabrication of nanometer‐scale structures on insulators and in magnetic materials using a scanning probe microscope
J. Vac. Sci. Technol. B 13, 1307–1311 (1995)
https://doi.org/10.1116/1.587843
Influence of water vapor on nanotribology studied by friction force microscopy
J. Vac. Sci. Technol. B 13, 1312–1315 (1995)
https://doi.org/10.1116/1.587844
Measurement of the piezoelectricity of films with scanning tunneling microscopy
J. Vac. Sci. Technol. B 13, 1316–1319 (1995)
https://doi.org/10.1116/1.587845
Discontinuous gold island films on mica
J. Vac. Sci. Technol. B 13, 1320–1324 (1995)
https://doi.org/10.1116/1.587846
Very sharp gold and platinum tips to modify gold surfaces in scanning tunneling microscopy
J. Vac. Sci. Technol. B 13, 1325–1331 (1995)
https://doi.org/10.1116/1.587847
Nanofabrication with a scanning tunneling microscope using chemical vapor deposition
J. Vac. Sci. Technol. B 13, 1332–1336 (1995)
https://doi.org/10.1116/1.587848
Nanoscale scanning tunneling microscope patterning of silicon dioxide thin films by catalyzed HF vapor etching
J. Vac. Sci. Technol. B 13, 1337–1341 (1995)
https://doi.org/10.1116/1.587849
Micromorphology of Ge and Si1−xGex layers grown on Si(001) by solution epitaxy and the negative‐differential conductivity on the Ge layer
J. Vac. Sci. Technol. B 13, 1342–1347 (1995)
https://doi.org/10.1116/1.587850
Simulations of the interaction of tunneling electrons with optical fields in laser‐illuminated field emission
J. Vac. Sci. Technol. B 13, 1348–1352 (1995)
https://doi.org/10.1116/1.587851
Cross‐sectional characterization of thin‐film transistors with transmission electron microscopy
J. Vac. Sci. Technol. B 13, 1353–1357 (1995)
https://doi.org/10.1116/1.587852
Single‐crystal epitaxial Ge‐based ohmic contact structure for III–V nanoelectronic and mesoscopic devices
J. Vac. Sci. Technol. B 13, 1358–1363 (1995)
https://doi.org/10.1116/1.587853
New compound quantum dot materials produced by electron‐beam induced deposition
J. Vac. Sci. Technol. B 13, 1364–1368 (1995)
https://doi.org/10.1116/1.587854
Applications of an atomic force microscope voltage probe with ultrafast time resolution
J. Vac. Sci. Technol. B 13, 1369–1374 (1995)
https://doi.org/10.1116/1.587855
High‐frequency pattern extraction in digital integrated circuits using scanning electrostatic force microscopy
J. Vac. Sci. Technol. B 13, 1375–1379 (1995)
https://doi.org/10.1116/1.587856
Atomic force microscope lithography using amorphous silicon as a resist and advances in parallel operation
J. Vac. Sci. Technol. B 13, 1380–1385 (1995)
https://doi.org/10.1116/1.587857
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.