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Issues
January 1995
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Extremely low specific contact resistivities for p‐type GaSb, grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 13, 1–3 (1995)
https://doi.org/10.1116/1.587979
Sequential tunneling through n‐type GaAs/AlGaAs multi‐quantum‐well structures with Schottky and ohmic contacts
J. Vac. Sci. Technol. B 13, 4–9 (1995)
https://doi.org/10.1116/1.587984
Passivation of GaAs surfaces and AlGaAs/GaAs heterojunction bipolar transistors using sulfide solutions and SiNx overlayer
J. Vac. Sci. Technol. B 13, 10–14 (1995)
https://doi.org/10.1116/1.588001
Comparison of H+ and He+ implant isolation of GaAs‐based heterojunction bipolar transistors
J. Vac. Sci. Technol. B 13, 15–18 (1995)
https://doi.org/10.1116/1.587975
Focused‐ion‐beam implantation of Ga in elemental and compound semiconductors
J. Vac. Sci. Technol. B 13, 19–26 (1995)
https://doi.org/10.1116/1.587978
Resolution enhanced scanning force microscopy measurements for characterizing dry etching methods applied to titanium masked InP
J. Vac. Sci. Technol. B 13, 34–39 (1995)
https://doi.org/10.1116/1.587981
Smooth reactive ion etching of GaAs using a hydrogen plasma pretreatment
J. Vac. Sci. Technol. B 13, 40–42 (1995)
https://doi.org/10.1116/1.587982
Patterned, photon‐driven cryoetching of GaAs and AlGaAs
J. Vac. Sci. Technol. B 13, 43–54 (1995)
https://doi.org/10.1116/1.587983
High growth rate of III–V compounds by free carrier gas chemical beam epitaxy
J. Vac. Sci. Technol. B 13, 55–58 (1995)
https://doi.org/10.1116/1.587985
Novel phosphorus and antimony sources for use in metalorganic molecular beam epitaxy
J. Vac. Sci. Technol. B 13, 59–63 (1995)
https://doi.org/10.1116/1.587986
Characterization of the Si/GaAs(110) interface by soft x‐ray surface x‐ray absorption fine structure
J. Vac. Sci. Technol. B 13, 69–76 (1995)
https://doi.org/10.1116/1.587988
X‐ray photoelectron spectroscopy and atomic force microscopy surface study of GaAs(100) cleaning procedures
J. Vac. Sci. Technol. B 13, 77–82 (1995)
https://doi.org/10.1116/1.587989
Problems relevant to the use of optical pyrometers for substrate temperature measurements and controls in molecular beam epitaxy
J. Vac. Sci. Technol. B 13, 83–87 (1995)
https://doi.org/10.1116/1.587990
Monolayer resolved monitoring of AlAs growth with metalorganic molecular beam epitaxy by reflectance anisotropy spectroscopy
J. Vac. Sci. Technol. B 13, 88–91 (1995)
https://doi.org/10.1116/1.587991
Scaling of Si and GaAs trench etch rates with aspect ratio, feature width, and substrate temperature
J. Vac. Sci. Technol. B 13, 92–104 (1995)
https://doi.org/10.1116/1.587992
Ellipsometry study of the nucleation of Si epitaxy by electron cyclotron resonance plasma chemical vapor deposition
J. Vac. Sci. Technol. B 13, 105–110 (1995)
https://doi.org/10.1116/1.588000
Role of ions in electron cyclotron resonance plasma‐enhanced chemical vapor deposition of silicon dioxide
J. Vac. Sci. Technol. B 13, 118–124 (1995)
https://doi.org/10.1116/1.588003
Filling dual damascene interconnect structures with AlCu and Cu using ionized magnetron deposition
J. Vac. Sci. Technol. B 13, 125–129 (1995)
https://doi.org/10.1116/1.588004
Characterization of thin copper films grown via chemical vapor deposition using liquid coinjection of trimethylvinylsilane and (hexafluoroacetylacetonate) Cu (trimethylvinylsilane)
J. E. Parmeter; G. A. Petersen; P. M. Smith; C. A. Apblett; J. S. Reid; J. A. T. Norman; A. K. Hochberg; D. A. Roberts; Thomas R. Omstead
J. Vac. Sci. Technol. B 13, 130–136 (1995)
https://doi.org/10.1116/1.588005
Effect of the duty ratio of line and space in phase‐shifting lithography
J. Vac. Sci. Technol. B 13, 137–141 (1995)
https://doi.org/10.1116/1.587971
Fabrication of column‐based silicon field emitter arrays for enhanced performance and yield
D. Temple; C. A. Ball; W. D. Palmer; L. N. Yadon; D. Vellenga; J. Mancusi; G. E. McGuire; H. F. Gray
J. Vac. Sci. Technol. B 13, 150–157 (1995)
https://doi.org/10.1116/1.587973
Writhing number of supercoiled DNA from its scanning force microscopy imaging
J. Vac. Sci. Technol. B 13, 158–160 (1995)
https://doi.org/10.1116/1.587974
Fabrication of sub‐100 nm GaAs columns by reactive ion etching using Au islands as etching mask
J. Vac. Sci. Technol. B 13, 161–162 (1995)
https://doi.org/10.1116/1.587976
Thermally stable AuGe–Au ohmic contacts for single doped InP high electron mobility transistor structures
J. Vac. Sci. Technol. B 13, 163–165 (1995)
https://doi.org/10.1116/1.587977
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.