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September 1994
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Fabrication and characterization of an array of gated avalanche p+–n++ junction as a micro‐vacuum triode
J. Vac. Sci. Technol. B 12, 2875–2879 (1994)
https://doi.org/10.1116/1.587206
Investigation of optical and electrical properties of ZnO ultrafine particle films prepared by direct current gas discharge activated reactive method
J. Vac. Sci. Technol. B 12, 2880–2883 (1994)
https://doi.org/10.1116/1.587207
Electrostatic removal of lithium fluoride from field‐emitter tips at elevated temperatures
J. Vac. Sci. Technol. B 12, 2889–2893 (1994)
https://doi.org/10.1116/1.587209
Scanning tunneling microscopy of Cl2‐gas etched GaAs (001) surfaces using an ultrahigh vacuum sample transfer system
J. Vac. Sci. Technol. B 12, 2894–2900 (1994)
https://doi.org/10.1116/1.587210
Integration of vertical‐cavity surface‐emitting devices by molecular beam epitaxy regrowth
J. Vac. Sci. Technol. B 12, 2905–2909 (1994)
https://doi.org/10.1116/1.587212
Fabrication of self‐aligned GaAs/AlGaAs and GaAs/InGaP microwave power heterojunction bipolar transistors
F. Ren; J. R. Lothian; S. J. Pearton; C. R. Abernathy; P. W. Wisk; T. R. Fullowan; B. Tseng; S. N. G. Chu; Y. K. Chen; L. W. Yang; S. T. Fu; R. S. Brozovich; H. H. Lin; C. L. Henning; T. Henry
J. Vac. Sci. Technol. B 12, 2916–2928 (1994)
https://doi.org/10.1116/1.587537
Self‐aligned dry‐etching process for waveguide diode ring lasers
J. Vac. Sci. Technol. B 12, 2929–2932 (1994)
https://doi.org/10.1116/1.587538
Reactive ion etching of GaAs through wafer via holes using Cl2 and SiCl4 gases: A comprehensive statistical approach
J. Vac. Sci. Technol. B 12, 2933–2940 (1994)
https://doi.org/10.1116/1.587539
Dependence of contact resistivity and Schottky diode characteristics on dry etching induced damage of GaInAs
J. Vac. Sci. Technol. B 12, 2941–2946 (1994)
https://doi.org/10.1116/1.587540
CH4/H2/Ar/Cl2 electron cyclotron resonance plasma etching of via holes for InP‐based microwave devices
J. Vac. Sci. Technol. B 12, 2947–2951 (1994)
https://doi.org/10.1116/1.587541
Study of silicon etching in CF4/O2 plasmas to establish surface re‐emission as the dominant transport mechanism
J. Vac. Sci. Technol. B 12, 2952–2962 (1994)
https://doi.org/10.1116/1.587542
Electron beam‐induced deposition of tungsten
J. Vac. Sci. Technol. B 12, 2976–2979 (1994)
https://doi.org/10.1116/1.587545
Compositional variation in sputtered Ti–W films due to re‐emission
J. Vac. Sci. Technol. B 12, 2980–2984 (1994)
https://doi.org/10.1116/1.587546
Long‐term reliability of Pt and Mo diffusion barriers in Ti–Pt–Au and Ti–Mo–Au metallization systems for GaAs digital integrated circuits
J. Vac. Sci. Technol. B 12, 2985–2991 (1994)
https://doi.org/10.1116/1.587547
Electromigration in AlSiCu/TiN/Ti interconnects with Ti and TiN additional layers
J. Vac. Sci. Technol. B 12, 2992–2996 (1994)
https://doi.org/10.1116/1.587548
Reaction between diamond and titanium for ohmic contact and metallization adhesion layers
J. Vac. Sci. Technol. B 12, 2997–3005 (1994)
https://doi.org/10.1116/1.587549
Silicon surface electrical properties after low‐temperature in situ cleaning using an electron cyclotron resonance plasma
J. Vac. Sci. Technol. B 12, 3010–3015 (1994)
https://doi.org/10.1116/1.587551
Thermal stability of highly Sb‐doped molecular beam epitaxy silicon grown at low temperatures: Structural and electrical characterization
E. V. Thomsen; O. Hansen; K. Harrekilde‐Petersen; J. L. Hansen; S. Y. Shiryaev; A. Nylandsted Larsen
J. Vac. Sci. Technol. B 12, 3016–3022 (1994)
https://doi.org/10.1116/1.587552
Bright visible photoluminescence of spark‐processed Ge, GaAs, and Si
J. Vac. Sci. Technol. B 12, 3023–3026 (1994)
https://doi.org/10.1116/1.587553
Damage behavior of silicon by MeV Ge+ irradiation under tilted angle
Ke‐Ming Wang; Bo‐Rong Shi; Shi‐Jie Ma; Xiang‐Dong Liu; Hong‐Ying Zhai; Tian‐Bin Xu; Pei‐Ran Zhu; Qing‐Tai Zhao
J. Vac. Sci. Technol. B 12, 3027–3030 (1994)
https://doi.org/10.1116/1.587554
Electron beam sublimation deposited and lifted‐off carbon mask for InP reactive ion etching
J. Vac. Sci. Technol. B 12, 3046–3047 (1994)
https://doi.org/10.1116/1.587557
Tenth micrometer trench fabrication by aperture narrowing of 0.6 μm starting mask structures using chemical‐beam deposition and ion‐beam redeposition
J. Vac. Sci. Technol. B 12, 3048–3053 (1994)
https://doi.org/10.1116/1.587558
Novel fiber growth on Ar+‐sputtered InP
J. Vac. Sci. Technol. B 12, 3054–3056 (1994)
https://doi.org/10.1116/1.587559
Repair of phase‐shifting mask defects using a novel planarization technique with conventional blanks
J. Vac. Sci. Technol. B 12, 3057–3059 (1994)
https://doi.org/10.1116/1.587560
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.