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July 1994
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Review of secondary ion mass spectrometry characterization of contamination associated with ion implantation
J. Vac. Sci. Technol. B 12, 2263–2279 (1994)
https://doi.org/10.1116/1.587753
Temperature dependence of photoluminescence linewidth in GaAs/GaAsP strained‐layer quantum well structures
J. Vac. Sci. Technol. B 12, 2293–2298 (1994)
https://doi.org/10.1116/1.587755
Optical properties of InAs/InP surface layers formed during the arsenic stabilization process
J. Vac. Sci. Technol. B 12, 2299–2304 (1994)
https://doi.org/10.1116/1.587756
Effects of substrate temperature and bias potential on hydrogen plasma etching of silicon
J. Vac. Sci. Technol. B 12, 2342–2346 (1994)
https://doi.org/10.1116/1.587761
Reactive ion etching of Ta–Si–N diffusion barriers in CF4+O2
J. Vac. Sci. Technol. B 12, 2352–2355 (1994)
https://doi.org/10.1116/1.587763
Resist pattern fluctuation limits in extreme‐ultraviolet lithography
J. Vac. Sci. Technol. B 12, 2361–2371 (1994)
https://doi.org/10.1116/1.587765
Radiation stability of SiO2‐antireflective film coated SiN and SiC x‐ray mask membranes
J. Vac. Sci. Technol. B 12, 2372–2375 (1994)
https://doi.org/10.1116/1.587766
Effect of MeV electron irradiation on gold atom implantation into silicon carbide and silicon nitride
J. Vac. Sci. Technol. B 12, 2376–2379 (1994)
https://doi.org/10.1116/1.587767
Microfabrication by ion milling: The lathe technique
J. Vac. Sci. Technol. B 12, 2388–2393 (1994)
https://doi.org/10.1116/1.587769
Characterization of metal–oxide–semiconductor capacitors with improved gate oxides prepared by repeated rapid thermal annealings in N2O
J. Vac. Sci. Technol. B 12, 2400–2404 (1994)
https://doi.org/10.1116/1.587771
Sodium contamination free ashing process using O2+H2O plasma downstream
J. Vac. Sci. Technol. B 12, 2409–2413 (1994)
https://doi.org/10.1116/1.587773
Ballistic‐electron emission microscopy on the Au/n‐Si(111)7×7 interface
J. Vac. Sci. Technol. B 12, 2422–2428 (1994)
https://doi.org/10.1116/1.587775
Deposition and subsequent removal of single Si atoms on the Si(111)‐7×7 surface by a scanning tunneling microscope
J. Vac. Sci. Technol. B 12, 2429–2433 (1994)
https://doi.org/10.1116/1.587776
Scanning tunneling microscopy observation of Al‐induced reconstructions of the Si(111) surface: Growth dynamics
J. Vac. Sci. Technol. B 12, 2434–2436 (1994)
https://doi.org/10.1116/1.587777
Investigation of porous silicon by scanning tunneling microscopy and atomic force microscopy
J. Vac. Sci. Technol. B 12, 2437–2439 (1994)
https://doi.org/10.1116/1.587778
Cross‐sectional scanning tunneling and scanning force microscopy of amorphous hydrogenated silicon pn‐doping superlattices in nitrogen and in air
J. Vac. Sci. Technol. B 12, 2440–2442 (1994)
https://doi.org/10.1116/1.587779
Statics and dynamics of ferroelectric domains studied with scanning force microscopy
J. Vac. Sci. Technol. B 12, 2451–2455 (1994)
https://doi.org/10.1116/1.587781
Topography of brittle fracture surfaces of titanium aluminide alloy as revealed by a scanning tunneling microscope
J. Vac. Sci. Technol. B 12, 2456–2458 (1994)
https://doi.org/10.1116/1.587782
Scanning tunneling microscope observation on the surface of iron meteorite
L. P. Zhang; J. Hu; L. Xu; X. W. Yao; G. G. Zhang; Y. Zhang; Y. L. Xu; M. Q. Li; Z. H. Li; X. D. Xie; Y. F. Xu; D. T. Zhang
J. Vac. Sci. Technol. B 12, 2459–2461 (1994)
https://doi.org/10.1116/1.587783
Design of an atom‐cluster generator for a transmission electron microscope and in situ observation of the deposition process of large atom clusters
J. Vac. Sci. Technol. B 12, 2462–2464 (1994)
https://doi.org/10.1116/1.587784
Flexible‐diaphragm force microscope
J. Vac. Sci. Technol. B 12, 2465–2466 (1994)
https://doi.org/10.1116/1.587785
Theoretical study of the band offsets at GaN/AlN interfaces
J. Vac. Sci. Technol. B 12, 2470–2474 (1994)
https://doi.org/10.1116/1.587786
Angle‐resolved photoemission of diamond (111) and (100) surfaces; negative electron affinity and band structure measurements
J. Vac. Sci. Technol. B 12, 2475–2479 (1994)
https://doi.org/10.1116/1.587787
Electrical properties of blue/green diode lasers
Y. Fan; D. C. Grillo; M. D. Ringle; J. Han; L. He; R. L. Gunshor; A. Salokatve; H. Jeon; M. Hovinen; A. V. Nurmikko; G. C. Hua; N. Otsuka
J. Vac. Sci. Technol. B 12, 2480–2483 (1994)
https://doi.org/10.1116/1.587788
Optical second harmonic generation: A probe of atomic structure and bonding at Si–SiO2 interfaces, and other chemically modified Si surfaces
U. Emmerichs; C. Meyer; H. J. Bakker; F. Wolter; H. Kurz; G. Lucovsky; C. E. Bjorkman; T. Yasuda; Yi Ma; Z. Jing; J. L. Whitten
J. Vac. Sci. Technol. B 12, 2484–2492 (1994)
https://doi.org/10.1116/1.587789
Synchrotron radiation x‐ray photoelectron spectroscopy study of hydrogen‐terminated Si surfaces and their oxidation mechanism
J. Vac. Sci. Technol. B 12, 2493–2499 (1994)
https://doi.org/10.1116/1.587790
X‐ray photoelectron spectroscopy and x‐ray absorption near‐edge spectroscopy study of SiO2/Si(100)
J. Vac. Sci. Technol. B 12, 2500–2503 (1994)
https://doi.org/10.1116/1.587791
Structure of oxygen‐doped silicon grown by chemical‐vapor deposition at low temperature
J. Vac. Sci. Technol. B 12, 2511–2515 (1994)
https://doi.org/10.1116/1.587793
Structural and optical properties of self‐assembled InGaAs quantum dots
J. Vac. Sci. Technol. B 12, 2516–2520 (1994)
https://doi.org/10.1116/1.587794
Scanning tunneling microscope and electron beam induced luminescence in quantum wires
L. Samuelson; A. Gustafsson; J. Lindahl; L. Montelius; M.‐E. Pistol; J.‐O. Malm; G. Vermeire; P. Demeester
J. Vac. Sci. Technol. B 12, 2521–2526 (1994)
https://doi.org/10.1116/1.587795
Strained layer epitaxy: How do capping layers and oppositely strained intermediate layers enhance the critical thickness?
J. Vac. Sci. Technol. B 12, 2527–2531 (1994)
https://doi.org/10.1116/1.587796
Monolayer growth oscillations and surface structure of GaAs(001) during metalorganic vapor phase epitaxy growth
J. Vac. Sci. Technol. B 12, 2541–2546 (1994)
https://doi.org/10.1116/1.587798
ZnSe nucleation on the GaAs(001):Se‐(2×1) surface observed by scanning tunneling microscopy
J. Vac. Sci. Technol. B 12, 2547–2551 (1994)
https://doi.org/10.1116/1.587799
Investigation of spontaneous ordering in GaInP using reflectance difference spectroscopy
J. Vac. Sci. Technol. B 12, 2552–2557 (1994)
https://doi.org/10.1116/1.587800
Identification of ordered and disordered Ga0.51In0.49P domains by spatially resolved luminescence and Raman spectroscopy
J. Vac. Sci. Technol. B 12, 2558–2561 (1994)
https://doi.org/10.1116/1.587801
Molecular beam epitaxy of InAs and its interaction with a GaAs overlayer on vicinal GaAs (001) substrates
J. Vac. Sci. Technol. B 12, 2562–2567 (1994)
https://doi.org/10.1116/1.587802
Mechanisms of strained island formation in molecular‐beam epitaxy of InAs on GaAs(100)
J. Vac. Sci. Technol. B 12, 2568–2573 (1994)
https://doi.org/10.1116/1.587803
Growth mechanism of GaAs on (110) GaAs studied by high‐energy electron diffraction and atomic force microscopy
J. Vac. Sci. Technol. B 12, 2574–2578 (1994)
https://doi.org/10.1116/1.587804
Atomic step organization in homoepitaxial growth on GaAs(111)B substrates
J. Vac. Sci. Technol. B 12, 2579–2583 (1994)
https://doi.org/10.1116/1.587805
CdTe/GaAs(100) heterojunctions: Growth modification by thin silicon interface layers
J. Vac. Sci. Technol. B 12, 2587–2591 (1994)
https://doi.org/10.1116/1.587214
Scanning tunneling microscopy of InAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry
J. Vac. Sci. Technol. B 12, 2592–2597 (1994)
https://doi.org/10.1116/1.587215
Light scattering studies of ZnSe/GaAs heterostructures
J. Vac. Sci. Technol. B 12, 2598–2604 (1994)
https://doi.org/10.1116/1.587216
Study of surface stoichiometry and luminescence efficiency of near‐surface quantum wells treated by hydrogen ions and atomic hydrogen
J. Vac. Sci. Technol. B 12, 2605–2609 (1994)
https://doi.org/10.1116/1.587217
Structural and electronic properties of an organic/inorganic semiconductor interface: PTCDA/GaAs(100)
J. Vac. Sci. Technol. B 12, 2616–2620 (1994)
https://doi.org/10.1116/1.587219
Optimization of contacts and mobilities for (001) oriented two‐dimensional hole gases
T. S. Cheng; D. Johnston; J. Middleton; K. Strickland; O. H. Hughes; J. J. Harris; C. T. Foxon; C. J. Mellor
J. Vac. Sci. Technol. B 12, 2621–2624 (1994)
https://doi.org/10.1116/1.587220
Measurement of heterojunction band offsets using ballistic electron emission microscopy
J. Vac. Sci. Technol. B 12, 2625–2628 (1994)
https://doi.org/10.1116/1.587221
In situ study of epitaxial CoSi2/Si(111) by ballistic‐electron‐emission microscopy
J. Vac. Sci. Technol. B 12, 2629–2633 (1994)
https://doi.org/10.1116/1.587222
Lateral variation in the Schottky barrier height of Au/PtSi/(100)Si diodes
J. Vac. Sci. Technol. B 12, 2634–2638 (1994)
https://doi.org/10.1116/1.587223
ZnSe(100): The surface and the formation of Schottky barriers with Al and Au
J. Vac. Sci. Technol. B 12, 2639–2645 (1994)
https://doi.org/10.1116/1.587224
Probing the CaF2 density of states at Au/CaF2/n‐Si(111) interfaces with photoelectron spectroscopy and ballistic‐electron emission microscopy
J. Vac. Sci. Technol. B 12, 2646–2652 (1994)
https://doi.org/10.1116/1.587225
Modification of Al/GaAs(001) Schottky barriers by means of heterovalent interface layers
M. Cantile; L. Sorba; P. Faraci; S. Yildirim; G. Biasiol; G. Bratina; A. Franciosi; T. J. Miller; M. I. Nathan; L. Tapfer
J. Vac. Sci. Technol. B 12, 2653–2659 (1994)
https://doi.org/10.1116/1.587226
Novel in situ electrochemical technology for formation of oxide‐ and defect‐free Schottky contact to GaAs and related low‐dimensional structures
J. Vac. Sci. Technol. B 12, 2660–2666 (1994)
https://doi.org/10.1116/1.587227
Dynamical transmission effects and impact ionization in hot‐electron transport across NiSi2/Si(111)7×7 interfaces
J. Vac. Sci. Technol. B 12, 2667–2674 (1994)
https://doi.org/10.1116/1.587228
Relation between atomic structure and surface‐stress anisotropy: Calculations for the clean Si(001) surface
J. Vac. Sci. Technol. B 12, 2675–2677 (1994)
https://doi.org/10.1116/1.587229
First‐principles study of Zn‐ and Se‐stabilized ZnSe(100) surface reconstructions
J. Vac. Sci. Technol. B 12, 2678–2683 (1994)
https://doi.org/10.1116/1.587230
Reflectance anisotropy of reconstructed GaAs(001) surfaces
J. Vac. Sci. Technol. B 12, 2684–2688 (1994)
https://doi.org/10.1116/1.587231
Step bunching and step equalization on vicinal GaAs(001) surfaces
K. Pond; A. Lorke; J. Ibbetson; V. Bressler‐Hill; R. Maboudian; W. H. Weinberg; A. C. Gossard; P. M. Petroff
J. Vac. Sci. Technol. B 12, 2689–2693 (1994)
https://doi.org/10.1116/1.587232
Structural properties of the Na/Si(111)2×1 surface studied by photoemission extended x‐ray‐absorption fine structures
J. Vac. Sci. Technol. B 12, 2694–2698 (1994)
https://doi.org/10.1116/1.587233
Cs‐induced highest EF jump above InAs(110) conduction‐band minimum
J. Vac. Sci. Technol. B 12, 2709–2712 (1994)
https://doi.org/10.1116/1.587236
Macroscopic electronic behavior and atomic arrangements of GaAs surfaces immersed in HCl solution
J. Vac. Sci. Technol. B 12, 2713–2719 (1994)
https://doi.org/10.1116/1.587237
Applications of computational fluid dynamics for improved performance in chemical‐vapor‐deposition reactors
David E. Kotecki; Richard A. Conti; Steven G. Barbee; Theodore D. Cacouris; Jonathan D. Chapple‐Sokol; Rudolph J. Eschbach; Donald L. Wilson; Justin Wong; Steven P. Zuhoski
J. Vac. Sci. Technol. B 12, 2752–2757 (1994)
https://doi.org/10.1116/1.587187
Mechanism of particle formation in the sputtering and reactive ion etching of Si and SiO2
J. Vac. Sci. Technol. B 12, 2758–2762 (1994)
https://doi.org/10.1116/1.587188
Materials and failure analysis methods and systems used in the development and manufacture of silicon integrated circuits
J. Vac. Sci. Technol. B 12, 2768–2778 (1994)
https://doi.org/10.1116/1.587190
High‐speed spectral ellipsometry for in situ diagnostics and process control
J. Vac. Sci. Technol. B 12, 2779–2784 (1994)
https://doi.org/10.1116/1.587191
Improving productivity on a single wafer aluminum etcher by the use of total productive maintenance
J. Vac. Sci. Technol. B 12, 2795–2799 (1994)
https://doi.org/10.1116/1.587193
Gate technology for 0.1‐μm Si complementary metal–oxide–semiconductor using g‐line exposure and deep ultraviolet hardening
J. Vac. Sci. Technol. B 12, 2800–2804 (1994)
https://doi.org/10.1116/1.587194
Characterization of plasma etch processes using measurements of discharge impedance
J. Vac. Sci. Technol. B 12, 2805–2809 (1994)
https://doi.org/10.1116/1.587195
First‐wafer effect in remote plasma processing: The stripping of photoresist, silicon nitride, and polysilicon
J. Vac. Sci. Technol. B 12, 2810–2817 (1994)
https://doi.org/10.1116/1.587196
Repeated compressive stress increase with 400 °C thermal cycling in tantalum thin films due to increases in the oxygen content
J. Vac. Sci. Technol. B 12, 2818–2821 (1994)
https://doi.org/10.1116/1.587197
Thermal stability of thin poly‐Si/Ta2O5/TiN capacitors for dynamic random access memory applications
J. Vac. Sci. Technol. B 12, 2822–2825 (1994)
https://doi.org/10.1116/1.587198
Formation of Si–SiO2 stacked‐gate structures by plasma‐assisted and rapid‐thermal processing: Improved device performance through process integration
J. Vac. Sci. Technol. B 12, 2839–2847 (1994)
https://doi.org/10.1116/1.587202
Wafer scale processing of InGaAsP/InP lasers
Steven Dzioba; J. P. D. Cook; T. V. Herak; S. Livermore; M. Young; R. Rousina; S. Jatar; F. R. Shepherd
J. Vac. Sci. Technol. B 12, 2848–2851 (1994)
https://doi.org/10.1116/1.587203
The ADEQUAT project for development and transfer of 0.25 μm logic complementary metal–oxide–semiconductor modules
R. DeKeersmaecker; G. Declerck; P. Félix; M. Haond; C. Hill; G. Janssen; J. Lorenz; H. Maes; A. Montree; F. Neppl; P. Patruno; M. Rudan; H. Ryssel; L. Van den hove; W. Vandervorst; A. van Ommen
J. Vac. Sci. Technol. B 12, 2852–2859 (1994)
https://doi.org/10.1116/1.587204
Sensor integration into plasma etch reactors of a developmental pilot line
G. G. Barna; L. M. Loewenstein; K. J. Brankner; S. W. Butler; P. K. Mozumder; J. A. Stefani; S. A. Henck; P. Chapados; D. Buck; S. Maung; S. Saxena; A. Unruh
J. Vac. Sci. Technol. B 12, 2860–2867 (1994)
https://doi.org/10.1116/1.587205
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.