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January 1994

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Scanning tunneling microscopy morphological study of the first stages of growth of microwave chemical vapor deposited thin diamond films

L. Vázquez; O. Sánchez; J . M. Albella

J. Vac. Sci. Technol. B 12, 1–7 (1994) https://doi.org/10.1116/1.587182

Abstract

View articletitled, Scanning tunneling microscopy morphological study of the first stages of growth of microwave chemical vapor deposited thin diamond films

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Fabrication of a nanoscale, in‐plane gated quantum wire by low energy ion exposure

C. C. Andrews; G. F. Spencer; F. Li; M. H. Weichold; W. P. Kirk

J. Vac. Sci. Technol. B 12, 8–13 (1994) https://doi.org/10.1116/1.587114

Abstract

View articletitled, Fabrication of a nanoscale, in‐plane gated quantum wire by low energy ion exposure

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Discretization of curved lines and arbitrary areas for ion and electron beam writing on a nonrectangular grid

D. K. de Vries; A. D. Wieck; K. Ploog

J. Vac. Sci. Technol. B 12, 14–19 (1994) https://doi.org/10.1116/1.587173

Abstract

View articletitled, Discretization of curved lines and arbitrary areas for ion and electron beam writing on a nonrectangular grid

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Fabrication of aspheric high numerical aperture reflective diffractive optic elements using electron beam lithography

D. Mikolas; R. Bojko; H. G. Craighead; F. Haas; D. A. Honey; H. F. Bare

J. Vac. Sci. Technol. B 12, 20–25 (1994) https://doi.org/10.1116/1.587185

Abstract

View articletitled, Fabrication of aspheric high numerical aperture reflective diffractive optic elements using electron beam lithography

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Realization of limited‐area cathodes and their performance in an electron optical column

C. E. Maloney; H. Nakamura; A. N. Broers; S. Xia; L. Peters

J. Vac. Sci. Technol. B 12, 26–31 (1994) https://doi.org/10.1116/1.587153

Abstract

View articletitled, Realization of limited‐area cathodes and their performance in an electron optical column

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Thin film materials for the preparation of attenuating phase shift masks

K. K. Shih; D. B. Dove

J. Vac. Sci. Technol. B 12, 32–36 (1994) https://doi.org/10.1116/1.587163

Abstract

View articletitled, Thin film materials for the preparation of attenuating phase shift masks

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New chemically amplified positive resist for electron beam lithography

Kazuhiko Hashimoto; Akiko Katsuyama; Masayuki Endo; Masaru Sasago

J. Vac. Sci. Technol. B 12, 37–43 (1994) https://doi.org/10.1116/1.587130

Abstract

View articletitled, New chemically amplified positive resist for electron beam lithography

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Ag₂Te/As₂S₃, a top‐surface, high‐contrast negative‐tone resist for deep ultraviolet submicron lithography

S. A. Dumford; J. M. Lavine

J. Vac. Sci. Technol. B 12, 44–47 (1994) https://doi.org/10.1116/1.587099

Abstract

View articletitled, Ag2Te/As2S3, a top‐surface, high‐contrast negative‐tone resist for deep ultraviolet submicron lithography

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Polycrystalline silicon ‘‘slit nanowire’’ for possible quantum devices

Yasuo Wada; Tokuo Kure; Toshiyuki Yoshimura; Yoshimi Sudou; Takashi Kobayashi; Yasushi Gotou; Seiichi Kondo

J. Vac. Sci. Technol. B 12, 48–53 (1994) https://doi.org/10.1116/1.587104

Abstract

View articletitled, Polycrystalline silicon ‘‘slit nanowire’’ for possible quantum devices

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Shallow trench isolation for ultra‐large‐scale integrated devices

K. Blumenstock; J. Theisen; P. Pan; J. Dulak; A. Ticknor; T. Sandwick

J. Vac. Sci. Technol. B 12, 54–58 (1994) https://doi.org/10.1116/1.587107

Abstract

View articletitled, Shallow trench isolation for ultra‐large‐scale integrated devices

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Three‐dimensional thermal analysis of high density triple‐level interconnection structures in very large scale integrated circuits

Xiang Gui; Steven K. Dew; Michael J. Brett

J. Vac. Sci. Technol. B 12, 59–62 (1994) https://doi.org/10.1116/1.587108

Abstract

View articletitled, Three‐dimensional thermal analysis of high density triple‐level interconnection structures in very large scale integrated circuits

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Relationship between void formation and electromigration performance in Al/TiW multilayered interconnections

Shin‐ichi Fukada; Kazue Kudo; Masayasu Suzuki

J. Vac. Sci. Technol. B 12, 63–68 (1994) https://doi.org/10.1116/1.587109

Abstract

View articletitled, Relationship between void formation and electromigration performance in Al/TiW multilayered interconnections

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Performance of the plasma deposited tungsten nitride barrier to prevent the interdiffusion of Al and Si

Chang Woo Lee; Yong Tae Kim; Choochon Lee; Jeong Yong Lee; Suk‐Ki Min; Young Wook Park

J. Vac. Sci. Technol. B 12, 69–72 (1994) https://doi.org/10.1116/1.587110

Abstract

View articletitled, Performance of the plasma deposited tungsten nitride barrier to prevent the interdiffusion of Al and Si

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Mechanism of ion beam induced deposition of gold

J. S. Ro; C. V. Thompson; J. Melngailis

J. Vac. Sci. Technol. B 12, 73–77 (1994) https://doi.org/10.1116/1.587111

Abstract

View articletitled, Mechanism of ion beam induced deposition of gold

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Chemistry of silicon surfaces after wet chemical preparation: A thermodesorption spectroscopy study

G. J. Pietsch; U. Köhler; M. Henzler

J. Vac. Sci. Technol. B 12, 78–87 (1994) https://doi.org/10.1116/1.587112

Abstract

View articletitled, Chemistry of silicon surfaces after wet chemical preparation: A thermodesorption spectroscopy study

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Characterization of the Si/SiO₂ interface morphology from quantum oscillations in Fowler–Nordheim tunneling currents

J. C. Poler; K. K. McKay; E. A. Irene

J. Vac. Sci. Technol. B 12, 88–95 (1994) https://doi.org/10.1116/1.587113

Abstract

View articletitled, Characterization of the Si/SiO2 interface morphology from quantum oscillations in Fowler–Nordheim tunneling currents

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Sidewall passivation during the etching of poly‐Si in an electron cyclotron resonance plasma of HBr

M. Haverlag; G. S. Oehrlein; D. Vender

J. Vac. Sci. Technol. B 12, 96–101 (1994) https://doi.org/10.1116/1.587115

Abstract

View articletitled, Sidewall passivation during the etching of poly‐Si in an electron cyclotron resonance plasma of HBr

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Evaluation and control of device damage in high density plasma etching

P. K. Gadgil; T. D. Mantei; X. C. Mu

J. Vac. Sci. Technol. B 12, 102–111 (1994) https://doi.org/10.1116/1.587165

Abstract

View articletitled, Evaluation and control of device damage in high density plasma etching

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Advanced electron cyclotron resonance plasma etching technology for precise ultra‐large‐scale integration patterning

Seiji Samukawa

J. Vac. Sci. Technol. B 12, 112–115 (1994) https://doi.org/10.1116/1.587166

Abstract

View articletitled, Advanced electron cyclotron resonance plasma etching technology for precise ultra‐large‐scale integration patterning

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On the spatial resolution of two‐dimensional doping profiles as measured using secondary ion mass spectrometry tomography

X. Liu; S. Goodwin‐Johansson; J. D. Jacobson; M. A. Ray; G. E. McGuire

J. Vac. Sci. Technol. B 12, 116–124 (1994) https://doi.org/10.1116/1.587167

Abstract

View articletitled, On the spatial resolution of two‐dimensional doping profiles as measured using secondary ion mass spectrometry tomography

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Roles of a Si insertion layer at GaAs/AlAs heterointerface determined by x‐ray photoemission spectroscopy

Y. Hashimoto; G. Tanaka; T. Ikoma

J. Vac. Sci. Technol. B 12, 125–129 (1994) https://doi.org/10.1116/1.587168

Abstract

View articletitled, Roles of a Si insertion layer at GaAs/AlAs heterointerface determined by x‐ray photoemission spectroscopy

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Plasma deposited SiO₂ for planar self‐aligned gate metal–insulator–semiconductor field effect transistors on semi‐insulating InP

Charles N. Tabory; Paul G. Young; Edwyn D. Smith; Samuel A. Alterovitz

J. Vac. Sci. Technol. B 12, 130–133 (1994) https://doi.org/10.1116/1.587169

Abstract

View articletitled, Plasma deposited SiO2 for planar self‐aligned gate metal–insulator–semiconductor field effect transistors on semi‐insulating InP

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Room temperature photoluminescence from modulation doped AlGaAs/InGaAs/GaAs quantum wells

Stefan P. Svensson; D. M. Gill; F. J. Towner; P. N. Uppal

J. Vac. Sci. Technol. B 12, 134–141 (1994) https://doi.org/10.1116/1.587170

Abstract

View articletitled, Room temperature photoluminescence from modulation doped AlGaAs/InGaAs/GaAs quantum wells

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Comparison of surface recombination velocities in InGaP and AlGaAs mesa diodes

S. J. Pearton; F. Ren; W. S. Hobson; C. R. Abernathy; U. K. Chakrabarti

J. Vac. Sci. Technol. B 12, 142–146 (1994) https://doi.org/10.1116/1.587171

Abstract

View articletitled, Comparison of surface recombination velocities in InGaP and AlGaAs mesa diodes

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Analysis of stoichiometry and oxide growth of HF treated GaAs (100) by x‐ray photoelectron spectroscopy and time‐of‐flight secondary ion mass spectrometry

W. Storm; D. Wolany; F. Schröder; G. Becker; B. Burkhardt; L. Wiedmann; A. Benninghoven

J. Vac. Sci. Technol. B 12, 147–153 (1994) https://doi.org/10.1116/1.587172

Abstract

View articletitled, Analysis of stoichiometry and oxide growth of HF treated GaAs (100) by x‐ray photoelectron spectroscopy and time‐of‐flight secondary ion mass spectrometry

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Influences of δ ‐doping time and spacer thickness on the mobility and two‐dimensional electron gas concentration in δ ‐doped GaAs/InGaAs/GaAs pseudomorphic heterostructures

H. M. Shieh; W. C. Hsu; M. J. Kao; C. L. Wu

J. Vac. Sci. Technol. B 12, 154–157 (1994) https://doi.org/10.1116/1.587174

Abstract

View articletitled, Influences of δ ‐doping time and spacer thickness on the mobility and two‐dimensional electron gas concentration in δ ‐doped GaAs/InGaAs/GaAs pseudomorphic heterostructures

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Fabrication and performance of GaAs metal–semiconductor field effect transistors with step‐graded striped focused ion beam doping in the channel regions

T. Hussain; J. R. A. Cleaver; H. Ahmed

J. Vac. Sci. Technol. B 12, 158–160 (1994) https://doi.org/10.1116/1.587175

Abstract

View articletitled, Fabrication and performance of GaAs metal–semiconductor field effect transistors with step‐graded striped focused ion beam doping in the channel regions

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Photolithographic patterning of porous silicon

J. G. Couillard; H. G. Craighead

J. Vac. Sci. Technol. B 12, 161–162 (1994) https://doi.org/10.1116/1.587176

Abstract

View articletitled, Photolithographic patterning of porous silicon

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Experimental observations and modeling of ultra‐shallow BF₂ and As implants in single‐crystal silicon

A. F. Tasch; S.‐H. Yang; S. Morris; D. Lim

J. Vac. Sci. Technol. B 12, 166–171 (1994) https://doi.org/10.1116/1.587177

Abstract

View articletitled, Experimental observations and modeling of ultra‐shallow BF2 and As implants in single‐crystal silicon

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Ultra‐shallow‐doped film requirements for future technologies

B. El‐Kareh

J. Vac. Sci. Technol. B 12, 172–178 (1994) https://doi.org/10.1116/1.587178

Abstract

View articletitled, Ultra‐shallow‐doped film requirements for future technologies

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Atomic layer epitaxy deposition processes

S. M. Bedair

J. Vac. Sci. Technol. B 12, 179–185 (1994) https://doi.org/10.1116/1.587179

Abstract

View articletitled, Atomic layer epitaxy deposition processes

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Secondary ion mass spectrometry analysis of ultrathin impurity layers in semiconductors and their use in quantification, instrumental assessment, and fundamental measurements

M. G. Dowsett; R. D. Barlow; P. N. Allen

J. Vac. Sci. Technol. B 12, 186–198 (1994) https://doi.org/10.1116/1.587180

Abstract

View articletitled, Secondary ion mass spectrometry analysis of ultrathin impurity layers in semiconductors and their use in quantification, instrumental assessment, and fundamental measurements

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Angle of incidence effects of an oxygen ion beam on the surface chemistry of GaAs

J. S. Solomon; J. T. Grant

J. Vac. Sci. Technol. B 12, 199–204 (1994) https://doi.org/10.1116/1.587181

Abstract

View articletitled, Angle of incidence effects of an oxygen ion beam on the surface chemistry of GaAs

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Nitrogen redistribution in SiO₂ under ion bombardment

Indrajit Banerjee; Dimitry Kuzminov

J. Vac. Sci. Technol. B 12, 205–208 (1994) https://doi.org/10.1116/1.587183

Abstract

View articletitled, Nitrogen redistribution in SiO2 under ion bombardment

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Secondary ion mass spectrometry measurements of shallow boron profiles in cobalt, silicon, and cobalt disilicide

B. Mohadjeri; B. G. Svensson

J. Vac. Sci. Technol. B 12, 209–213 (1994) https://doi.org/10.1116/1.587184

Abstract

View articletitled, Secondary ion mass spectrometry measurements of shallow boron profiles in cobalt, silicon, and cobalt disilicide

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Ultra‐shallow depth profiling with time‐of‐flight secondary ion mass spectrometry

J. Bennett; J. A. Dagata

J. Vac. Sci. Technol. B 12, 214–218 (1994) https://doi.org/10.1116/1.587143

Abstract

View articletitled, Ultra‐shallow depth profiling with time‐of‐flight secondary ion mass spectrometry

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Solid source diffusion from agglomerating silicide sources. I. Measurement and modeling

J. Y. Tsai; C. Canovai; C. M. Osburn; Q. F. Wang; J. Rose; A. Cowen; M. S. Denker

J. Vac. Sci. Technol. B 12, 219–229 (1994) https://doi.org/10.1116/1.587144

Abstract

View articletitled, Solid source diffusion from agglomerating silicide sources. I. Measurement and modeling

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Improvement of depth resolution in secondary ion mass spectrometry depth profiling of silicided poly contacts

Sean F. Corcoran; Dave Soza; Nancy Kincaid; Don Danielson

J. Vac. Sci. Technol. B 12, 230–233 (1994) https://doi.org/10.1116/1.587145

Abstract

View articletitled, Improvement of depth resolution in secondary ion mass spectrometry depth profiling of silicided poly contacts

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Method for the measurement of the lateral dose distribution of dopants at implantation or diffusion mask edges (‘‘lateral SIMS’’)

R. von Criegern; F. Jahnel; M. Bianco; R. Lange‐Gieseler

J. Vac. Sci. Technol. B 12, 234–242 (1994) https://doi.org/10.1116/1.587146

Abstract

View articletitled, Method for the measurement of the lateral dose distribution of dopants at implantation or diffusion mask edges (‘‘lateral SIMS’’)

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Comparison between computer simulation and direct secondary ion mass spectrometry measurement of lateral dopant distributions

G. A. Cooke; M. G. Dowsett; C. Hill; P. J. Pearson; A. J. Walton

J. Vac. Sci. Technol. B 12, 243–246 (1994) https://doi.org/10.1116/1.587147

Abstract

View articletitled, Comparison between computer simulation and direct secondary ion mass spectrometry measurement of lateral dopant distributions

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Two‐dimensional doping profiles from experimentally measured one‐dimensional secondary ion mass spectroscopy data

Scott Goodwin‐Johansson; Xuefeng Liu; Mark Ray

J. Vac. Sci. Technol. B 12, 247–253 (1994) https://doi.org/10.1116/1.587148

Abstract

View articletitled, Two‐dimensional doping profiles from experimentally measured one‐dimensional secondary ion mass spectroscopy data

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Effect of matrix stopping power on sputter depth profile broadening

P. A. Ronsheim; M. Tejwani

J. Vac. Sci. Technol. B 12, 254–257 (1994) https://doi.org/10.1116/1.587149

Abstract

View articletitled, Effect of matrix stopping power on sputter depth profile broadening

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Secondary ion mass spectrometry depth profiling of boron and antimony deltas in silicon: Comparison of the resolution functions using oxygen bombardment at different energies and impact angles

K. Wittmaack

J. Vac. Sci. Technol. B 12, 258–262 (1994) https://doi.org/10.1116/1.587150

Abstract

View articletitled, Secondary ion mass spectrometry depth profiling of boron and antimony deltas in silicon: Comparison of the resolution functions using oxygen bombardment at different energies and impact angles

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Sputter‐initiated resonance ionization spectroscopy: An analytical technique for quantitative and sensitive measurements of impurities and ultra‐shallow doping profiles in semiconductors

H. F. Arlinghaus; M. T. Spaar; T. Tanigaki; A. W. McMahon; P. H. Holloway

J. Vac. Sci. Technol. B 12, 263–268 (1994) https://doi.org/10.1116/1.587151

Abstract

View articletitled, Sputter‐initiated resonance ionization spectroscopy: An analytical technique for quantitative and sensitive measurements of impurities and ultra‐shallow doping profiles in semiconductors

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Limiting factors for secondary ion mass spectrometry profiling

Eun‐Hee Cirlin; John J. Vajo; T. C. Hasenberg

J. Vac. Sci. Technol. B 12, 269–275 (1994) https://doi.org/10.1116/1.587152

Abstract

View articletitled, Limiting factors for secondary ion mass spectrometry profiling

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Two‐dimensional spreading resistance profiling: Recent understandings and applications

W. Vandervorst; V. Privitera; V. Raineri; T. Clarysse; M. Pawlik

J. Vac. Sci. Technol. B 12, 276–282 (1994) https://doi.org/10.1116/1.587154

Abstract

View articletitled, Two‐dimensional spreading resistance profiling: Recent understandings and applications

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Improved analysis of spreading resistance measurements

Scott T. Dunham; Nat Collins; Nanseng Jeng

J. Vac. Sci. Technol. B 12, 283–289 (1994) https://doi.org/10.1116/1.587155

Abstract

View articletitled, Improved analysis of spreading resistance measurements

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Automatic generation of shallow electrically active dopant profiles from spreading resistance measurements

T. Clarysse; W. Vandervorst

J. Vac. Sci. Technol. B 12, 290–297 (1994) https://doi.org/10.1116/1.587156

Abstract

View articletitled, Automatic generation of shallow electrically active dopant profiles from spreading resistance measurements

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On the reduction of carrier spilling effects during resistance measurements with the spreading impedance probe

I. Czech; T. Clarysse; W. Vandervorst

J. Vac. Sci. Technol. B 12, 298–303 (1994) https://doi.org/10.1116/1.587157

Abstract

View articletitled, On the reduction of carrier spilling effects during resistance measurements with the spreading impedance probe

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Towards a physical understanding of spreading resistance probe technique profiling

J. Snauwaert; L. Hellemans; I. Czech; T. Clarysse; W. Vandervorst; M. Pawlik

J. Vac. Sci. Technol. B 12, 304–311 (1994) https://doi.org/10.1116/1.587158

Abstract

View articletitled, Towards a physical understanding of spreading resistance probe technique profiling

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From InP/GaInAsP interface study to nanometer range heterostructure detection with probe method

J. Walachová; Z. Šroubek; J. Zelinka; M. Kot; W. Pittroff

J. Vac. Sci. Technol. B 12, 312–316 (1994) https://doi.org/10.1116/1.587159

Abstract

View articletitled, From InP/GaInAsP interface study to nanometer range heterostructure detection with probe method

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Profiling of silicide–silicon structures using a combination of the spreading resistance and point contact current–voltage methods

J. M. Heddleson; S. R. Weinzierl; R. J. Hillard; P. Rai‐Choudhury; R. G. Mazur

J. Vac. Sci. Technol. B 12, 317–321 (1994) https://doi.org/10.1116/1.587160

Abstract

View articletitled, Profiling of silicide–silicon structures using a combination of the spreading resistance and point contact current–voltage methods

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Detection of anomalous defect‐enhanced diffusion using advanced spreading resistance measurements and analysis

S. R. Weinzierl; R. J. Hillard; J. M. Heddleson; P. Rai‐Choudhury; R. G. Mazur; C. M. Osburn

J. Vac. Sci. Technol. B 12, 322–326 (1994) https://doi.org/10.1116/1.587161

Abstract

View articletitled, Detection of anomalous defect‐enhanced diffusion using advanced spreading resistance measurements and analysis

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Doping profiles characterization in GaAs semi‐insulating substrates using capacitance–voltage, conductance–voltage, and current–voltage measurements

K. Iniewski; M. Liu; C. A. T. Salama

J. Vac. Sci. Technol. B 12, 327–331 (1994) https://doi.org/10.1116/1.587162

Abstract

View articletitled, Doping profiles characterization in GaAs semi‐insulating substrates using capacitance–voltage, conductance–voltage, and current–voltage measurements

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Device structure characterization using the comparative capacitance–voltage technique

Robert C. Taft; Matthew S. Noell

J. Vac. Sci. Technol. B 12, 332–335 (1994) https://doi.org/10.1116/1.587164

Abstract

View articletitled, Device structure characterization using the comparative capacitance–voltage technique

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Accurate profiling of ultra‐shallow implants with mercury gate metal–oxide–semiconductor capacitance–voltage

Roger Le Dudal; R. J. Hillard; J. M. Heddleson; S. R. Weinzierl; P. Rai‐Choudhury; R. G. Mazur

J. Vac. Sci. Technol. B 12, 336–341 (1994) https://doi.org/10.1116/1.587121

Abstract

View articletitled, Accurate profiling of ultra‐shallow implants with mercury gate metal–oxide–semiconductor capacitance–voltage

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Accurate determination of shallow doping profiles and interface states for metal–oxide–semiconductor structures from measured capacitance–voltage data

A. L. M. Osse; J. P. Krusius; S. Weinzierl

J. Vac. Sci. Technol. B 12, 342–346 (1994) https://doi.org/10.1116/1.587122

Abstract

View articletitled, Accurate determination of shallow doping profiles and interface states for metal–oxide–semiconductor structures from measured capacitance–voltage data

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Characterization of structure/dopant behavior by electron microscopy

Dennis M. Maher; Bojun Zhang

J. Vac. Sci. Technol. B 12, 347–352 (1994) https://doi.org/10.1116/1.587123

Abstract

View articletitled, Characterization of structure/dopant behavior by electron microscopy

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Transmission electron microscopy study of two‐dimensional semiconductor device junction delineation by chemical etching

Jingbao Liu; M. Lawrence A. Dass; Ronald Gronsky

J. Vac. Sci. Technol. B 12, 353–356 (1994) https://doi.org/10.1116/1.587124

Abstract

View articletitled, Transmission electron microscopy study of two‐dimensional semiconductor device junction delineation by chemical etching

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Electron‐beam induced current determination of shallow junction depth

E. A. Fitzgerald; H.‐J. Gossmann; F. C. Unterwald; H. S. Luftman; D. Monroe

J. Vac. Sci. Technol. B 12, 357–361 (1994) https://doi.org/10.1116/1.587125

Abstract

View articletitled, Electron‐beam induced current determination of shallow junction depth

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Cross‐sectional scanning tunneling microscopy on heterostructures: Atomic resolution, composition fluctuations and doping

H. W. M. Salemink; M. B. Johnson; O. Albrektsen

J. Vac. Sci. Technol. B 12, 362–368 (1994) https://doi.org/10.1116/1.587126

Abstract

View articletitled, Cross‐sectional scanning tunneling microscopy on heterostructures: Atomic resolution, composition fluctuations and doping

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Capacitance–voltage measurement and modeling on a nanometer scale by scanning C–V microscopy

Y. Huang; C. C. Williams

J. Vac. Sci. Technol. B 12, 369–372 (1994) https://doi.org/10.1116/1.587127

Abstract

View articletitled, Capacitance–voltage measurement and modeling on a nanometer scale by scanning C–V microscopy

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Junction locations by scanning tunneling microscopy: In‐air‐ambient investigation of passivated GaAs pn junctions

Wen F. Tseng; John A. Dagata; Rick M. Silver; Joseph Fu; Jeremiah R. Lowney

J. Vac. Sci. Technol. B 12, 373–377 (1994) https://doi.org/10.1116/1.587128

Abstract

View articletitled, Junction locations by scanning tunneling microscopy: In‐air‐ambient investigation of passivated GaAs pn junctions

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Two‐dimensional delineation of semiconductor doping by scanning resistance microscopy

C. Shafai; D. J. Thomson; M. Simard‐Normandin

J. Vac. Sci. Technol. B 12, 378–382 (1994) https://doi.org/10.1116/1.587129

Abstract

View articletitled, Two‐dimensional delineation of semiconductor doping by scanning resistance microscopy

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Electrical and structural characterization of boron‐doped Si_1−xGe_x strained layers

N. Moriya; L. C. Feldman; H. S. Luftman; C. A. King

J. Vac. Sci. Technol. B 12, 383–386 (1994) https://doi.org/10.1116/1.587131

Abstract

View articletitled, Electrical and structural characterization of boron‐doped Si1−xGex strained layers

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Anomalous low‐temperature dopant diffusion from in situ doped polycrystalline and epitaxial Si layers into the monocrystalline Si substrate

M. Caymax; K. Baert; J. Poortmans; W. Vandervorst

J. Vac. Sci. Technol. B 12, 387–390 (1994) https://doi.org/10.1116/1.587132

Abstract

View articletitled, Anomalous low‐temperature dopant diffusion from in situ doped polycrystalline and epitaxial Si layers into the monocrystalline Si substrate

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Boltzmann–Matano analysis based model for boron diffusion from polysilicon into single crystal silicon

Akif Sultan; Surya Bhattacharya; Shubneesh Batra; Sanjay Banerjee

J. Vac. Sci. Technol. B 12, 391–394 (1994) https://doi.org/10.1116/1.587133

Abstract

View articletitled, Boltzmann–Matano analysis based model for boron diffusion from polysilicon into single crystal silicon

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Measurement of the sheet resistance of doped layers in semiconductors by microwave reflection

H. Bhimnathwala; J. M. Borrego

J. Vac. Sci. Technol. B 12, 395–398 (1994) https://doi.org/10.1116/1.587134

Abstract

View articletitled, Measurement of the sheet resistance of doped layers in semiconductors by microwave reflection

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Ultra‐shallow boxlike profiles fabricated by pulsed ultraviolet‐laser doping process

Emi Ishida; Thomas W. Sigmon; Kurt H. Weiner; Michael R. Frost

J. Vac. Sci. Technol. B 12, 399–404 (1994) https://doi.org/10.1116/1.587135

Abstract

View articletitled, Ultra‐shallow boxlike profiles fabricated by pulsed ultraviolet‐laser doping process

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Size‐scalable, 2.45‐GHz electron cyclotron resonance plasma source using permanent magnets and waveguide coupling

Ward D. Getty; Joseph B. Geddes

J. Vac. Sci. Technol. B 12, 408–415 (1994) https://doi.org/10.1116/1.587136

Abstract

View articletitled, Size‐scalable, 2.45‐GHz electron cyclotron resonance plasma source using permanent magnets and waveguide coupling

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Optimization of an electron cyclotron resonance plasma etch process for n⁺ polysilicon: HBr process chemistry

G. D. Tipton; M. G. Blain; P. L. Westerfield; L. S. Trutna; K. L. Maxwell

J. Vac. Sci. Technol. B 12, 416–421 (1994) https://doi.org/10.1116/1.587137

Abstract

View articletitled, Optimization of an electron cyclotron resonance plasma etch process for n+ polysilicon: HBr process chemistry

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High aspect ratio polyimide etching using an oxygen plasma generated by electron cyclotron resonance source

W. H. Juan; S. W. Pang

J. Vac. Sci. Technol. B 12, 422–426 (1994) https://doi.org/10.1116/1.587138

Abstract

View articletitled, High aspect ratio polyimide etching using an oxygen plasma generated by electron cyclotron resonance source

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Selective dry etching in a high density plasma for 0.5 μm complementary metal–oxide–semiconductor technology

J. Givens; S. Geissler; J. Lee; O. Cain; J. Marks; P. Keswick; C. Cunningham

J. Vac. Sci. Technol. B 12, 427–432 (1994) https://doi.org/10.1116/1.587139

Abstract

View articletitled, Selective dry etching in a high density plasma for 0.5 μm complementary metal–oxide–semiconductor technology

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Dielectric thin film deposition by electron cyclotron resonance plasma chemical vapor deposition for optoelectronics

Steven Dzioba; R. Rousina

J. Vac. Sci. Technol. B 12, 433–440 (1994) https://doi.org/10.1116/1.587140

Abstract

View articletitled, Dielectric thin film deposition by electron cyclotron resonance plasma chemical vapor deposition for optoelectronics

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Relationships between the material properties of silicon oxide films deposited by electron cyclotron resonance chemical vapor deposition and their use as an indicator of the dielectric constant

B. Fowler; E. O’Brien

J. Vac. Sci. Technol. B 12, 441–448 (1994) https://doi.org/10.1116/1.587141

Abstract

View articletitled, Relationships between the material properties of silicon oxide films deposited by electron cyclotron resonance chemical vapor deposition and their use as an indicator of the dielectric constant

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Metal ion deposition from ionized mangetron sputtering discharge

S. M. Rossnagel; J. Hopwood

J. Vac. Sci. Technol. B 12, 449–453 (1994) https://doi.org/10.1116/1.587142

Abstract

View articletitled, Metal ion deposition from ionized mangetron sputtering discharge

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Gate oxide damage in a high density inductively coupled plasma

Calvin T. Gabriel; Yosias Melaku

J. Vac. Sci. Technol. B 12, 454–460 (1994) https://doi.org/10.1116/1.587100

Abstract

View articletitled, Gate oxide damage in a high density inductively coupled plasma

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Two‐dimensional modeling of high plasma density inductively coupled sources for materials processing

Peter L. G. Ventzek; Robert J. Hoekstra; Mark J. Kushner

J. Vac. Sci. Technol. B 12, 461–477 (1994) https://doi.org/10.1116/1.587101

Abstract

View articletitled, Two‐dimensional modeling of high plasma density inductively coupled sources for materials processing

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Two‐dimensional fluid model of high density inductively coupled plasma sources

R. A. Stewart; P. Vitello; D. B. Graves

J. Vac. Sci. Technol. B 12, 478–485 (1994) https://doi.org/10.1116/1.587102

Abstract

View articletitled, Two‐dimensional fluid model of high density inductively coupled plasma sources

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Transport and heating of small particles in high density plasma sources

M. D. Kilgore; J. E. Daugherty; R. K. Porteous; D. B. Graves

J. Vac. Sci. Technol. B 12, 486–493 (1994) https://doi.org/10.1116/1.587103

Abstract

View articletitled, Transport and heating of small particles in high density plasma sources

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Neutral transport in high plasma‐density reactors

M. D. Kilgore; H. M. Wu; D. B. Graves

J. Vac. Sci. Technol. B 12, 494–506 (1994) https://doi.org/10.1116/1.587105

Abstract

View articletitled, Neutral transport in high plasma‐density reactors

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Ponderomotive transport of charge in the induction plasma

John C. Helmer; Joseph Feinstein

J. Vac. Sci. Technol. B 12, 507–511 (1994) https://doi.org/10.1116/1.587106

Abstract

View articletitled, Ponderomotive transport of charge in the induction plasma

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