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Volume 11, Issue 6
November 1993
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Cover Image for Volume 11, Issue 6
All Issues
ISSN 1071-1023
EISSN 1520-8567
Gas phase etching of Si(111)‐(7×7) surfaces by oxygen observed by scanning tunneling microscopy
F. Donig; A. Feltz; M. Kulakov; H. E. Hessel; U. Memmert; R. J. Behm
J. Vac. Sci. Technol. B 11, 1955–1961 (1993) https://doi.org/10.1116/1.586527
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Fabrication of micromachined silicon tip transducer for tactile sensing
J. C. Jiang; V. Faynberg; R. C. White; P. K. Allen
J. Vac. Sci. Technol. B 11, 1962–1967 (1993) https://doi.org/10.1116/1.586528
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Influence of oxygen on the formation of ripples on Si
K. Elst; W. Vandervorst; J. Alay; J. Snauwaert; L. Hellemans
J. Vac. Sci. Technol. B 11, 1968–1981 (1993) https://doi.org/10.1116/1.586529
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Scanning tunneling microscopy study of deoxygenated and de‐ionized water rinsed GaAs(111)‐B surfaces
T. Fukuda; Y. Hirota
J. Vac. Sci. Technol. B 11, 1982–1986 (1993) https://doi.org/10.1116/1.586530
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Development of an ultrahigh vacuum atomic force microscope for investigations of semiconductor surfaces
M. Kageshima; H. Yamada; K. Nakayama; H. Sakama; A. Kawazu; T. Fujii; M. Suzuki
J. Vac. Sci. Technol. B 11, 1987–1991 (1993) https://doi.org/10.1116/1.586531
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Nanofabrication of metal structures in gold films deposited on mica
L. A. Silva; P. Laitenberger; R. E. Palmer
J. Vac. Sci. Technol. B 11, 1992–1999 (1993) https://doi.org/10.1116/1.586532
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Rearrangement of Au(111) surface as a result of scanning with scanning tunneling/atomic force microscopes
Hong Wang; Jing Jing; H. T. Chu; P. N. Henriksen
J. Vac. Sci. Technol. B 11, 2000–2005 (1993) https://doi.org/10.1116/1.586533
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Analysis of highly ordered pyrolytic graphite step defects via scanning tunneling microscope
J. D. Noll; J. B. Cooper; M. L. Myrick
J. Vac. Sci. Technol. B 11, 2006–2011 (1993) https://doi.org/10.1116/1.586534
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Digital scan model for focused ion beam induced gas etching
L. R. Harriott
J. Vac. Sci. Technol. B 11, 2012–2015 (1993) https://doi.org/10.1116/1.586535
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Transmission electron microscopy specimen preparation technique using focused ion beam fabrication: Application to GaAs metal–semiconductor field effect transistors
Akira Yamaguchi; Masahiro Shibata; Tatsuya Hashinaga
J. Vac. Sci. Technol. B 11, 2016–2020 (1993) https://doi.org/10.1116/1.586536
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Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam
M. H. F. Overwijk; F. C. van den Heuvel; C. W. T. Bulle‐Lieuwma
J. Vac. Sci. Technol. B 11, 2021–2024 (1993) https://doi.org/10.1116/1.586537
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Hydrogen plasma processing of GaAs and AlGaAs
Kent D. Choquette; R. S. Freund; M. Hong; H. S. Luftman; S. N. G. Chu; J. P. Mannaerts; R. C. Wetzel
J. Vac. Sci. Technol. B 11, 2025–2032 (1993) https://doi.org/10.1116/1.586538
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Ultraviolet‐ozone oxidation of GaAs(100) and InP(100)
Z. H. Lu; B. Bryskiewicz; J. McCaffrey; Z. Wasilewski; M. J. Graham
J. Vac. Sci. Technol. B 11, 2033–2037 (1993) https://doi.org/10.1116/1.586539
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Identification of volatile products in low pressure hydrocarbon electron cyclotron resonance reactive ion etching of InP and GaAs
D. L. Melville; J. G. Simmons; D. A. Thompson
J. Vac. Sci. Technol. B 11, 2038–2045 (1993) https://doi.org/10.1116/1.586540
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Ion velocity distributions in helicon wave plasmas: Magnetic field and pressure effects
T. Nakano; K. P. Giapis; R. A. Gottscho; T. C. Lee; N. Sadeghi
J. Vac. Sci. Technol. B 11, 2046–2056 (1993) https://doi.org/10.1116/1.586541
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p‐type ZnSe grown by molecular beam epitaxy with remote microwave plasma of N2
Y. Kawakami; T. Ohnakado; M. Tsuka; S. Tokudera; Y. Ito; Sz. Fujita; Sg. Fujita
J. Vac. Sci. Technol. B 11, 2057–2061 (1993) https://doi.org/10.1116/1.586542
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Galvanomagnetic study of p‐Hg1−xCdxTe passivated surfaces
P. Höschl; P. Moravec; J. Franc; R. Grill; P. Milev; E. Belas
J. Vac. Sci. Technol. B 11, 2062–2066 (1993) https://doi.org/10.1116/1.586543
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Electron cyclotron resonance sputter removal of SiO2 on silicon wafers
V. Gopinath; G. T. Salbert; T. A. Grotjohn; D. K. Reinhard
J. Vac. Sci. Technol. B 11, 2067–2070 (1993) https://doi.org/10.1116/1.586544
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Influence of reactant transport on fluorine reactive ion etching of deep trenches in silicon
John C. Arnold; David C. Gray; Herbert H. Sawin
J. Vac. Sci. Technol. B 11, 2071–2080 (1993) https://doi.org/10.1116/1.586545
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Characterization of silicon dioxide and phosphosilicate glass deposited films
S. Rojas; L. Zanotti; A. Borghesi; A. Sassella; G. U. Pignatel
J. Vac. Sci. Technol. B 11, 2081–2089 (1993) https://doi.org/10.1116/1.586546
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Comparison of passivation films: The effect of thermal cycles and comparison of phosphorous doped oxide films
T. H. Tom Wu; Kari O’Brien; Diederik G. Hemmes
J. Vac. Sci. Technol. B 11, 2090–2095 (1993) https://doi.org/10.1116/1.586547
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Ellipsometric monitoring and control of the rapid thermal oxidation of silicon
K. A. Conrad; R. K. Sampson; H. Z. Massoud; E. A. Irene
J. Vac. Sci. Technol. B 11, 2096–2101 (1993) https://doi.org/10.1116/1.586548
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Ellipsometric determination of the thickness and refractive index of silicon films
M. Li; V. A. Yakovlev; J. Wall; E. A. Irene
J. Vac. Sci. Technol. B 11, 2102–2106 (1993) https://doi.org/10.1116/1.586549
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Selective and blanket copper chemical vapor deposition for ultra‐large‐scale integration
A. Jain; T. T. Kodas; R. Jairath; M. J. Hampden‐Smith
J. Vac. Sci. Technol. B 11, 2107–2113 (1993) https://doi.org/10.1116/1.586550
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Tolerance on alignment error in GHOST proximity effect correction
K. Moriizumi; A. N. Broers
J. Vac. Sci. Technol. B 11, 2114–2120 (1993) https://doi.org/10.1116/1.586551
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Lift‐off process for noble metals
Karel Domanský; Danuta Petelenz; Jiří Janata
J. Vac. Sci. Technol. B 11, 2121–2122 (1993) https://doi.org/10.1116/1.586552
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Nanofabrication techniques for a 100 nm‐scale tungsten polycide gate structure
T. Azuma; T. Nakasugi; S. Oogi; Y. Takigami; H. Oyamatsu
J. Vac. Sci. Technol. B 11, 2123–2126 (1993) https://doi.org/10.1116/1.586553
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Layer structure evaluation of multilayer x‐ray mirror by combination of focused ion beam etching and transmission electron microscopy
Kunio Nakajima; Shuzo Sudo; Makoto Yakushiji; Takayuki Ishii; Sadao Aoki
J. Vac. Sci. Technol. B 11, 2127–2129 (1993) https://doi.org/10.1116/1.586554
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Hafnium dioxide etch‐stop layer for phase‐shifting masks
K. K. Shih; T. C. Chieu; D. B. Dove
J. Vac. Sci. Technol. B 11, 2130–2131 (1993) https://doi.org/10.1116/1.586555
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Photo‐ and electron‐beam lithography sharing common stencil
V. A. Krupenin; S. V. Lotkhov; S. V. Vyshenskii
J. Vac. Sci. Technol. B 11, 2132–2136 (1993) https://doi.org/10.1116/1.586447
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Temperature measurement for scanning tunnel microscope samples using a detachable thermocouple
Kevin D. John; K. J. Wan; John T. Yates, Jr.
J. Vac. Sci. Technol. B 11, 2137–2138 (1993) https://doi.org/10.1116/1.586448
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Lithographic patterning of self‐assembled films
Jeffrey M. Calvert
J. Vac. Sci. Technol. B 11, 2155–2163 (1993) https://doi.org/10.1116/1.586449
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Alignment signal failure detection and recovery in real time
C. J. Progler; A. C. Chen; E. Hughlett
J. Vac. Sci. Technol. B 11, 2164–2174 (1993) https://doi.org/10.1116/1.586450
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Marks for alignment and registration in projection electron lithography
R. C. Farrow; J. A. Liddle; S. D. Berger; H. A. Huggins; J. S. Kraus; R. M. Camarda; R. G. Tarascon; C. W. Jurgensen; R. R. Kola; L. Fetter
J. Vac. Sci. Technol. B 11, 2175–2178 (1993) https://doi.org/10.1116/1.586451
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Improvement of heterodyne alignment technique for x‐ray steppers
K. Koga; T. Itoh; S. Kusumoto; K. Araki; J. Yasui; H. Takeuchi; S. Aoki
J. Vac. Sci. Technol. B 11, 2179–2182 (1993) https://doi.org/10.1116/1.586452
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Confocal filtering of the instantaneous image in scanned darkfield alignment
A. E. Rosenbluth; C. Progler; M. Fullenbaum
J. Vac. Sci. Technol. B 11, 2183–2190 (1993) https://doi.org/10.1116/1.586453
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Novel on‐axis interferometric alignment method with sub‐10 nm precision
A. Moel; E. E. Moon; R. D. Frankel; Henry I. Smith
J. Vac. Sci. Technol. B 11, 2191–2194 (1993) https://doi.org/10.1116/1.586454
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Focused‐ion beam induced deposition of copper
Anthony D. Della Ratta; John Melngailis; Carl V. Thompson
J. Vac. Sci. Technol. B 11, 2195–2199 (1993) https://doi.org/10.1116/1.586455
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Focused ion beam XeF2 etching of materials for phase‐shift masks
L. R. Harriott
J. Vac. Sci. Technol. B 11, 2200–2203 (1993) https://doi.org/10.1116/1.586456
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Selective electroless plating on electron beam seeded nanostructures
K. L. Lee; R. R. Thomas; A. Viehbeck; E. J. M. O’Sullivan
J. Vac. Sci. Technol. B 11, 2204–2209 (1993) https://doi.org/10.1116/1.586457
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Modification of polymer surfaces and the fabrication of submicron‐scale functionalized structures by deep‐ultraviolet and electron‐beam lithography
M. N. Wybourne; J. C. Wu; Mingdi Yan; Sui Xiong Cai; John F. W. Keana
J. Vac. Sci. Technol. B 11, 2210–2213 (1993) https://doi.org/10.1116/1.586458
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Characteristics of ion beam assisted etching of GaAs: Surface stoichiometry
Toshihiko Kosugi; Hiroaki Iwase; Kenji Gamo
J. Vac. Sci. Technol. B 11, 2214–2218 (1993) https://doi.org/10.1116/1.586459
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Resolution limits in electron‐beam induced tungsten deposition
K. T. Kohlmann‐von Platen; J. Chlebek; M. Weiss; K. Reimer; H. Oertel; W. H. Brünger
J. Vac. Sci. Technol. B 11, 2219–2223 (1993) https://doi.org/10.1116/1.586460
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High‐resolution reactive ion etching and damage effects in the Si/GexSi1−x system
R. Cheung; T. Zijlstra; E. van der Drift; L. J. Geerligs; A. H. Verbruggen; K. Werner; S. Radelaar
J. Vac. Sci. Technol. B 11, 2224–2228 (1993) https://doi.org/10.1116/1.586461
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Fabrication of silicon nanostructures with electron‐beam lithography using AlN as a dry‐etch durable resist
Tetsuya Tada; Toshihiko Kanayama
J. Vac. Sci. Technol. B 11, 2229–2232 (1993) https://doi.org/10.1116/1.586462
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Controlling the profile of nanostructures
K. Tsutsui; E. L. Hu; C. D. W. Wilkinson
J. Vac. Sci. Technol. B 11, 2233–2236 (1993) https://doi.org/10.1116/1.586463
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Very low damage etching of GaAs
S. K. Murad; C. D. W. Wilkinson; P. D. Wang; W. Parkes; C. M. Sotomayor‐Torres; N. Cameron
J. Vac. Sci. Technol. B 11, 2237–2243 (1993) https://doi.org/10.1116/1.586464
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Selectively dry gate recessed GaAs metal–semiconductor field‐effect transistors, high electron mobility transistors, and monolithic microwave integrated circuits
N. I. Cameron; S. Ferguson; M. R. S. Taylor; S. P. Beaumont; M. Holland; C. Tronche; M. Soulard; P. H. Ladbrooke
J. Vac. Sci. Technol. B 11, 2244–2248 (1993) https://doi.org/10.1116/1.586465
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Characterization of low energy ion‐induced damage using the multiple quantum well probe technique with an intervening superlattice
D. L. Green; E. L. Hu; P. M. Petroff; V. Liberman; M. Nooney; R. Martin
J. Vac. Sci. Technol. B 11, 2249–2253 (1993) https://doi.org/10.1116/1.586466
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Fabrication of parallel quantum wires in GaAs/AlGaAs heterostructures using AlAs etch stop layers
R. Grundbacher; H. Chang; M. Hannan; I. Adesida
J. Vac. Sci. Technol. B 11, 2254–2257 (1993) https://doi.org/10.1116/1.586467
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Characteristics of selective reactive ion etching of InGaAs/InAlAs heterostructures using HBr plasma
Sambhu Agarwala; Ilesanmi Adesida; Catherine Caneau; Rajaram Bhat
J. Vac. Sci. Technol. B 11, 2258–2261 (1993) https://doi.org/10.1116/1.586468
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300 kHz pulse plasma etching of GaAs using a mixture of ClCH3 and H2
V. J. Law; M. Tewordt; D. C. Clary; G. A. C. Jones
J. Vac. Sci. Technol. B 11, 2262–2265 (1993) https://doi.org/10.1116/1.586886
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Characteristics of in situ Cl2 etched/regrown GaAs/GaAs interfaces
D. S. L. Mui; T. A. Strand; B. J. Thibeault; L. A. Coldren; P. M. Petroff; E. L. Hu
J. Vac. Sci. Technol. B 11, 2266–2269 (1993) https://doi.org/10.1116/1.586887
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Etching on silicon membranes for sub‐0.25‐μm x‐ray mask manufacturing
K. Paul Muller; Nicholas K. Eib; Thomas B. Faure
J. Vac. Sci. Technol. B 11, 2270–2274 (1993) https://doi.org/10.1116/1.586888
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Controllable layer‐by‐layer etching of III–V compound semiconductors with an electron cyclotron resonance source
K. K. Ko; S. W. Pang
J. Vac. Sci. Technol. B 11, 2275–2279 (1993) https://doi.org/10.1116/1.586889
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Highly selective reactive ion etch process for InP‐based device fabrication using methane/hydrogen/argon
Jeff E. Schramm; Evelyn L. Hu; James L. Merz; Julia J. Brown; Melissa A. Melendes; Mark A. Thompson; April S. Brown
J. Vac. Sci. Technol. B 11, 2280–2283 (1993) https://doi.org/10.1116/1.586890
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Multilayer resist dry etching technology for deep submicron lithography
Ken Tokashiki; Kiyoyuki Sato; Nahomi Aoto; Eiji Ikawa
J. Vac. Sci. Technol. B 11, 2284–2287 (1993) https://doi.org/10.1116/1.586891
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Low‐damage electron‐beam‐assisted dry etching of GaAs and AlGaAs using electron cyclotron resonance plasma electron source
Heiji Watanabe; Shinji Matsui
J. Vac. Sci. Technol. B 11, 2288–2293 (1993) https://doi.org/10.1116/1.586892
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Particle–particle interaction effects in image projection lithography systems
S. D. Berger; D. J. Eaglesham; R. C. Farrow; R. R. Freeman; J. S. Kraus; J. A. Liddle
J. Vac. Sci. Technol. B 11, 2294–2298 (1993) https://doi.org/10.1116/1.586893
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Limits of low‐energy electron optics
Laurence S. Hordon; Zhirong Huang; Nadim Maluf; Ray Browning; R. Fabian W. Pease
J. Vac. Sci. Technol. B 11, 2299–2303 (1993) https://doi.org/10.1116/1.586894
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Large‐area electron‐beam source
W. R. Livesay
J. Vac. Sci. Technol. B 11, 2304–2308 (1993) https://doi.org/10.1116/1.586895
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EL‐4 column and control
Paul F. Petric; Michael S. Gordon; Joseph J. Senesi; Donald F. Haire
J. Vac. Sci. Technol. B 11, 2309–2314 (1993) https://doi.org/10.1116/1.586896
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Magnetic microlens with an atomically sharp field emitter
B. D. Terris; O. Züǵer; D. Rugar
J. Vac. Sci. Technol. B 11, 2315–2318 (1993) https://doi.org/10.1116/1.586897
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Effect of beam condition in variable‐shaped electron‐beam direct writing for 0.25 μm and below
Satomi Hirasawa; Ken Nakajima; Takao Tamura; Naoaki Aizaki
J. Vac. Sci. Technol. B 11, 2319–2322 (1993) https://doi.org/10.1116/1.586898
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Continuous writing method for high speed electron‐beam direct writing system HL‐800D
Masamichi Kawano; Kazui Mizuno; Haruo Yoda; Yoshio Sakitani; Kimiaki Andou; Norio Saitou
J. Vac. Sci. Technol. B 11, 2323–2326 (1993) https://doi.org/10.1116/1.586980
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Oxygen processed field emission tips for microcolumn applications
H. S. Kim; M. L. Yu; U. Staufer; L. P. Muray; D. P. Kern; T. H. P. Chang
J. Vac. Sci. Technol. B 11, 2327–2331 (1993) https://doi.org/10.1116/1.586981
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EL‐4, a new generation electron‐beam lithography system
H. C. Pfeiffer; D. E. Davis; W. A. Enichen; M. S. Gordon; T. R. Groves; J. G. Hartley; R. J. Quickle; J. D. Rockrohr; W. Stickel; E. V. Weber
J. Vac. Sci. Technol. B 11, 2332–2341 (1993) https://doi.org/10.1116/1.586982
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Spatial‐phase‐locked electron‐beam lithography: Initial test results
Juan Ferrera; Vincent V. Wong; S. Rishton; V. Boegli; E. H. Anderson; D. P. Kern; Henry I. Smith
J. Vac. Sci. Technol. B 11, 2342–2345 (1993) https://doi.org/10.1116/1.586983
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Electron‐beam direct writing system EX‐8D employing character projection exposure method
K. Hattori; R. Yoshikawa; H. Wada; H. Kusakabe; T. Yamaguchi; S. Magoshi; A. Miyagaki; S. Yamasaki; T. Takigawa; M. Kanoh; S. Nishimura; H. Housai; S. Hashimoto
J. Vac. Sci. Technol. B 11, 2346–2351 (1993) https://doi.org/10.1116/1.586984
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Laboratory setup for projection electron lithography and a Monte Carlo simulation of scattering mask transmission
Peter D. Miller; J. Murray Gibson; Arno J. Bleeker; J. Alex Liddle
J. Vac. Sci. Technol. B 11, 2352–2356 (1993) https://doi.org/10.1116/1.586985
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Electron‐beam block exposure system for a 256 M dynamic random access memory
K. Sakamoto; S. Fueki; S. Yamazaki; T. Abe; K. Kobayashi; H. Nishino; T. Satoh; A. Takemoto; A. Ookura; M. Oono; S. Sago; Y. Oae; A. Yamada; H. Yasuda
J. Vac. Sci. Technol. B 11, 2357–2361 (1993) https://doi.org/10.1116/1.586986
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Integration of microstructures onto negative electron affinity cathodes: Fabrication and operation of an addressable negative electron affinity cathode
Edval J. P. Santos; Noel C. MacDonald
J. Vac. Sci. Technol. B 11, 2362–2366 (1993) https://doi.org/10.1116/1.586987
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Proximity effects in low‐energy electron‐beam lithography
T. J. Stark; K. M. Edenfeld; D. P. Griffis; Z. J. Radzimski; P. E. Russell
J. Vac. Sci. Technol. B 11, 2367–2372 (1993) https://doi.org/10.1116/1.586988
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Multiple beam‐shaping diaphragm for efficient exposure of gratings
H. Elsner; P. Hahmann; G. Dahm; H. W. P. Koops
J. Vac. Sci. Technol. B 11, 2373–2377 (1993) https://doi.org/10.1116/1.586989
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Electrodynamics of fast beam blankers
M. Gesley; D. Colby; F. Raymond; D. McClure; F. Abboud
J. Vac. Sci. Technol. B 11, 2378–2385 (1993) https://doi.org/10.1116/1.586990
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Constructive three‐dimensional lithography with electron‐beam induced deposition for quantum effect devices
Hans W. P. Koops; Johannes Kretz; Michael Rudolph; Markus Weber
J. Vac. Sci. Technol. B 11, 2386–2389 (1993) https://doi.org/10.1116/1.586991
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Feasibility study of new graybeam writing strategies for raster scan mask generation
Andrew Murray; Frank Abboud; Frederick Raymond; C. N. Berglund
J. Vac. Sci. Technol. B 11, 2390–2396 (1993) https://doi.org/10.1116/1.586992
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Use of a variable shaped beam electron lithography system for diffractive optics components manufacturing
Jacques Trotel
J. Vac. Sci. Technol. B 11, 2397–2399 (1993) https://doi.org/10.1116/1.586993
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Intelligent design splitting in the stencil mask technology used for electron‐ and ion‐beam lithography
U. Behringer; H. Engelke
J. Vac. Sci. Technol. B 11, 2400–2403 (1993) https://doi.org/10.1116/1.586994
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Edge roughness of a 200‐nm pitch resist pattern fabricated by ion projection lithography
W. H. Brünger; J. Blaschke; M. Torkler; L.‐M. Buchmann
J. Vac. Sci. Technol. B 11, 2404–2408 (1993) https://doi.org/10.1116/1.586995
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Projection ion beam lithography
H. Löschner; G. Stengl; A. Chalupka; J. Fegerl; R. Fischer; E. Hammel; G. Lammer; L. Malek; R. Nowak; C. Traher; H. Vonach; P. Wolf; R. W. Hill
J. Vac. Sci. Technol. B 11, 2409–2415 (1993) https://doi.org/10.1116/1.586996
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Focused‐ion‐beam damage‐etch patterning for isolation of quantum structures in AlGaAs/GaAs
I. M. Templeton; M. Fallahi; S. Charbonneau; H. G. Champion; L. B. Allard
J. Vac. Sci. Technol. B 11, 2416–2419 (1993) https://doi.org/10.1116/1.586997
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New characterization method of ion current‐density profile based on damage distribution of Ga+ focused‐ion beam implantation in GaAs
G. Ben Assayag; C. Vieu; J. Gierak; P. Sudraud; A. Corbin
J. Vac. Sci. Technol. B 11, 2420–2426 (1993) https://doi.org/10.1116/1.586998
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Effects of focused ion beam reticle repair on optical lithography at i‐line and deep ultraviolet wavelengths
P. D. Prewett; B. Martin; A. W. Eastwood; J. G. Watson
J. Vac. Sci. Technol. B 11, 2427–2431 (1993) https://doi.org/10.1116/1.586999
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Ion exposure characterization of a chemically amplified epoxy resist
D. P. Stumbo; J. C. Wolfe
J. Vac. Sci. Technol. B 11, 2432–2435 (1993) https://doi.org/10.1116/1.587000
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Quasiperiodic nanostructures in focused ion beam deposited tungsten at high angles of incidence
Xin Xu; John Melngailis
J. Vac. Sci. Technol. B 11, 2436–2440 (1993) https://doi.org/10.1116/1.587001
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Investigations of artificial nanostructures and lithography techniques with a scanning probe microscope
U. A. Griesinger; C. Kaden; N. Lichtenstein; J. Hommel; G. Lehr; R. Bergmann; A. Menschig; H. Schweizer; H. Hillmer; H. W. P. Koops; J. Kretz; M. Rudolph
J. Vac. Sci. Technol. B 11, 2441–2445 (1993) https://doi.org/10.1116/1.586643
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Optimization of aerial image quality
S. Turner; F. Cerrina
J. Vac. Sci. Technol. B 11, 2446–2451 (1993) https://doi.org/10.1116/1.586644
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Time‐of‐flight electron spectrometer for voltage measurements on integrated circuits
A. R. Dinnis; A. Khursheed
J. Vac. Sci. Technol. B 11, 2452–2455 (1993) https://doi.org/10.1116/1.586645
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Metrology of high‐resolution resist structures on insulating substrates
E. Di Fabrizio; L. Grella; L. Luciani; M. Gentili; M. Baciocchi; M. Figliomeni; L. Mastrogiacomo; R. Maggiora; Q. Leonard; F. Cerrina; M. Molino; D. Powderly
J. Vac. Sci. Technol. B 11, 2456–2462 (1993) https://doi.org/10.1116/1.586646
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Metrology for replicated x‐ray masks using an electron‐beam machine
L. Luciani; E. Di Fabrizio; L. Grella; M. Baciocchi; M. Figliomeni; M. Gentili; L. Mastrogiacomo; R. Maggiora; A. Kraspenova; M. Reilly
J. Vac. Sci. Technol. B 11, 2463–2467 (1993) https://doi.org/10.1116/1.586647
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Real‐time latent image monitoring during holographic fabrication of submicron diffraction gratings
Jeffrey A. Gregus; Christian A. Green; Euijoon Yoon; Fred W. Ostermayer; Todd R. Hayes; Richard Pawelek; Richard A. Gottscho; S. Sohail H. Naqvi
J. Vac. Sci. Technol. B 11, 2468–2472 (1993) https://doi.org/10.1116/1.586648
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Line profile measurement with a scanning probe microscope
J. E. Griffith; H. M. Marchman; G. L. Miller; L. C. Hopkins; M. J. Vasile; S. A. Schwalm
J. Vac. Sci. Technol. B 11, 2473–2476 (1993) https://doi.org/10.1116/1.586649
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Simulation of x‐ray generation based on electron trajectory calculation
H. Koshishiba; M. Yoshimura; Y. Nakagawa
J. Vac. Sci. Technol. B 11, 2477–2481 (1993) https://doi.org/10.1116/1.586650
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Metrology for phase‐shifting masks
H. M. Marchman; S. Vaidya; C. Pierrat; J. Griffith
J. Vac. Sci. Technol. B 11, 2482–2486 (1993) https://doi.org/10.1116/1.586651
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Schottky field emission based scanning Auger microprobe
David H. Narum
J. Vac. Sci. Technol. B 11, 2487–2492 (1993) https://doi.org/10.1116/1.586652
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Fabrication of a novel split‐backgate transistor by in situ focused ion‐beam lithography and molecular‐beam epitaxial regrowth
K. M. Brown; E. H. Linfield; G. A. C. Jones; D. A. Ritchie; J. H. Thompson
J. Vac. Sci. Technol. B 11, 2493–2496 (1993) https://doi.org/10.1116/1.586653
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Micromachining in III–V semiconductors using wet photoelectrochemical etching
Reena Khare; Evelyn L. Hu; Julia J. Brown; Melissa A. Melendes
J. Vac. Sci. Technol. B 11, 2497–2501 (1993) https://doi.org/10.1116/1.586654
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Fabrication limits of nanometer T and Γ gates: Theory and experiment
B. E. Maile
J. Vac. Sci. Technol. B 11, 2502–2508 (1993) https://doi.org/10.1116/1.586655
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Multiwavelength distributed Bragg reflector laser array fabricated using near field holographic printing with an electron‐beam generated phase grating mask
D. M. Tennant; T. L. Koch; J‐M. Verdiell; K. Feder; R. P. Gnall; U. Koren; M. G. Young; B. I. Miller; M. A. Newkirk; B. Tell
J. Vac. Sci. Technol. B 11, 2509–2513 (1993) https://doi.org/10.1116/1.586656
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Fabrication of curved mirrors for visible semiconductor lasers using electron‐beam lithography and chemically assisted ion‐beam etching
P. Unger; V. Boegli; P. Buchmann; R. Germann
J. Vac. Sci. Technol. B 11, 2514–2518 (1993) https://doi.org/10.1116/1.586657
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Fabrication of sub‐10 nm structures by lift‐off and by etching after electron‐beam exposure of poly(methylmethacrylate) resist on solid substrates
Wei Chen; Haroon Ahmed
J. Vac. Sci. Technol. B 11, 2519–2523 (1993) https://doi.org/10.1116/1.586658
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10 nm Si pillars fabricated using electron‐beam lithography, reactive ion etching, and HF etching
Paul B. Fischer; Kevin Dai; Erli Chen; Stephen Y. Chou
J. Vac. Sci. Technol. B 11, 2524–2527 (1993) https://doi.org/10.1116/1.586659
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Design and analysis of InAs/AlSb ballistic constrictions for high temperature operation and low gate leakage
S. J. Koester; C. R. Bolognesi; E. L. Hu; H. Kroemer; M. J. Rooks; G. L. Snider
J. Vac. Sci. Technol. B 11, 2528–2531 (1993) https://doi.org/10.1116/1.586660
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Self‐limiting oxidation of Si nanowires
H. I. Liu; D. K. Biegelsen; N. M. Johnson; F. A. Ponce; R. F. W. Pease
J. Vac. Sci. Technol. B 11, 2532–2537 (1993) https://doi.org/10.1116/1.586661
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Integrated silicon process for microdynamic vacuum field emission cathodes
Z. Lisa Zhang; Noel C. MacDonald
J. Vac. Sci. Technol. B 11, 2538–2543 (1993) https://doi.org/10.1116/1.586662
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Investigation of the longitudinal and lateral distribution of implantation induced damage in GaAs/InGaAs heterostructures
A. Kieslich; H. Doleschel; F. Faller; A. Forchel; N. G. Stoffel
J. Vac. Sci. Technol. B 11, 2544–2547 (1993) https://doi.org/10.1116/1.586663
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Fabrication of freestanding structures and proposed applications in tunneling sensors
D. F. Moore; M. I. Lutwyche; A. C. F. Hoole
J. Vac. Sci. Technol. B 11, 2548–2551 (1993) https://doi.org/10.1116/1.586621
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Self‐aligned fabrication of arrays of back‐to‐back external 45° reflectors integrated with ridge‐waveguide lasers for surface‐emitting high‐power semiconductor laser sources in AlGaAs/GaAs
G. A. Porkolab; E. D. Wolf
J. Vac. Sci. Technol. B 11, 2552–2555 (1993) https://doi.org/10.1116/1.586622
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Optical analysis of quantum confined Stark effect in overgrown InGaAs/InP quantum wires
O. Schilling; A. Forchel; A. Kohl; S. Brittner
J. Vac. Sci. Technol. B 11, 2556–2559 (1993) https://doi.org/10.1116/1.586623
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Multilayer resist process for asymmetric gate recess in field‐effect transistors
D. G. Ballegeer; K. Nummila; I. Adesida
J. Vac. Sci. Technol. B 11, 2560–2564 (1993) https://doi.org/10.1116/1.586624
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New technique for computation and challenges for electron‐beam lithography
Xiaokang Huang; Greg Bazán; Gary H. Bernstein
J. Vac. Sci. Technol. B 11, 2565–2569 (1993) https://doi.org/10.1116/1.586625
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Ultrahigh resolution magnetic force microscope tip fabricated using electron beam lithography
Paul B. Fischer; Mark S. Wei; Stephen Y. Chou
J. Vac. Sci. Technol. B 11, 2570–2573 (1993) https://doi.org/10.1116/1.586626
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Directly patterned low voltage planar tungsten lateral field emission structures
A. C. F. Hoole; D. F. Moore; A. N. Broers
J. Vac. Sci. Technol. B 11, 2574–2578 (1993) https://doi.org/10.1116/1.586627
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Fabrication of mesoscopic structures by channeled ion implantation for the study of boundary scattering of electrons
R. I. Hornsey; J. R. A. Cleaver; H. Ahmed
J. Vac. Sci. Technol. B 11, 2579–2583 (1993) https://doi.org/10.1116/1.586628
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Fabrication and optical properties of InGaAs/InP quantum wires and dots with strong lateral quantization effects
P. Ils; M. Michel; A. Forchel; I. Gyuro; M. Klenk; E. Zielinski
J. Vac. Sci. Technol. B 11, 2584–2587 (1993) https://doi.org/10.1116/1.586629
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Fabrication of hard x‐ray phase zone plate by x‐ray lithography
A. A. Krasnoperova; J. Xiao; F. Cerrina; E. Di Fabrizio; L. Luciani; M. Figliomeni; M. Gentili; W. Yun; B. Lai; E. Gluskin
J. Vac. Sci. Technol. B 11, 2588–2591 (1993) https://doi.org/10.1116/1.586630
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Effects of low energy ion exposure on modulation‐doped GaAs heterostructures
F. Li; G. F. Spencer; T. Wang; C. C. Andrews; W. P. Kirk
J. Vac. Sci. Technol. B 11, 2592–2596 (1993) https://doi.org/10.1116/1.586631
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Determination of acid diffusion rate in a chemically amplified resist with scanning tunneling microscope lithography
F. Keith Perkins; Elizabeth A. Dobisz; Christie R. K. Marrian
J. Vac. Sci. Technol. B 11, 2597–2602 (1993) https://doi.org/10.1116/1.586632
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Fabrication of Y‐gate, submicron gate length GaAs metal–semiconductor field effect transistors
F. Ren; S. J. Pearton; J. R. Lothian; C. R. Abernathy
J. Vac. Sci. Technol. B 11, 2603–2606 (1993) https://doi.org/10.1116/1.586633
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Integrated approach to quantum dot fabrication
S. A. Rishton; Y. H. Lee; K. R. Milkove; J. M. Hong; V. Boegli; M. DeFranza; U. Sivan; D. P. Kern
J. Vac. Sci. Technol. B 11, 2607–2611 (1993) https://doi.org/10.1116/1.586634
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High performance sub‐0.1 μm silicon n‐metal–oxide–semiconductor transistors with composite metal/polysilicon gates
S. A. Rishton; Y. J. Mii; D. P. Kern; Y. Taur; K. Y. Lee; T. Lii; K. Jenkins; D. Quinlan; T. Brown, Jr.; D. Danner; F. Sewell; M. Polcari
J. Vac. Sci. Technol. B 11, 2612–2614 (1993) https://doi.org/10.1116/1.586635
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Electron‐beam lithography for advanced device prototyping: Process tool metrology
M. G. Rosenfield; M. G. R. Thomson; P. J. Coane; K. T. Kwietniak; J. Keller; D. P. Klaus; R. P. Volant; C. R. Blair; K. S. Tremaine; T. H. Newman; F. J. Hohn
J. Vac. Sci. Technol. B 11, 2615–2620 (1993) https://doi.org/10.1116/1.586636
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Ridge‐waveguide sidewall‐grating distributed feedback structures fabricated by x‐ray lithography
Vincent V. Wong; Woo‐Young Choi; J. M. Carter; C. G. Fonstad; Henry I. Smith; Y. Chung; N. Dagli
J. Vac. Sci. Technol. B 11, 2621–2624 (1993) https://doi.org/10.1116/1.586637
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Fabrication of 100 nm T‐gates for monolithic microwave integrated circuits using x‐ray lithography
Nitin Gupta; Scott D. Hector; Kee W. Rhee; Henry I. Smith
J. Vac. Sci. Technol. B 11, 2625–2628 (1993) https://doi.org/10.1116/1.586638
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Focused ion beam interaction with a shallow two‐dimensional electron gas
Yeong‐Ah Soh; Gregory L. Snider; Michael J. Skvarla; Harold G. Craighead
J. Vac. Sci. Technol. B 11, 2629–2632 (1993) https://doi.org/10.1116/1.586639
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Diffraction gratings for measuring slow mode surface plasmon polaritons
R. C. Tiberio; G. M. Pugh; T. Sjodin; B. W. Reed; P. D. Sparks
J. Vac. Sci. Technol. B 11, 2633–2636 (1993) https://doi.org/10.1116/1.586640
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Nanofabrication of photonic lattice structures in GaAs/AlGaAs
J. R. Wendt; G. A. Vawter; P. L. Gourley; T. M. Brennan; B. E. Hammons
J. Vac. Sci. Technol. B 11, 2637–2640 (1993) https://doi.org/10.1116/1.586641
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Low‐loss beamwidth transformers on InP with reduced requirements on lithographic resolution
R. Zengerle; H. J. Brückner; B. Hübner; W. Weiershausen
J. Vac. Sci. Technol. B 11, 2641–2644 (1993) https://doi.org/10.1116/1.586642
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Etched‐quartz fabrication issues for a 0.25 μm phase‐shifted dynamic random access memory application
R. Ferguson; R. Martino; R. Budd; G. Hughes; J. Skinner; J. Staples; C. Ausschnitt; J. Weed
J. Vac. Sci. Technol. B 11, 2645–2650 (1993) https://doi.org/10.1116/1.586578
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Mask assisted off‐axis illumination technique for random logic
J. Garofalo; C. J. Biddick; R. L. Kostelak; S. Vaidya
J. Vac. Sci. Technol. B 11, 2651–2658 (1993) https://doi.org/10.1116/1.586579
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Edge location errors in Cr‐less and rim‐type phase‐shifting lithography
M. Weiss; W. Henke; K. Ronse
J. Vac. Sci. Technol. B 11, 2659–2664 (1993) https://doi.org/10.1116/1.586580
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Evaluation of repair phase and size tolerance for a phase‐shift mask
Hiroshi Ohtsuka; Kazuyuki Kuwahara; Toshio Onodera
J. Vac. Sci. Technol. B 11, 2665–2668 (1993) https://doi.org/10.1116/1.586581
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Phase‐shifting lithography: Maskmaking and its application
Hisashi Watanabe; Yoshihiro Todokoro
J. Vac. Sci. Technol. B 11, 2669–2674 (1993) https://doi.org/10.1116/1.586582
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Optical projection system for gigabit dynamic random access memories
H. Jeong; D. A. Markle; G. Owen; R. F. W. Pease; A. Grenville
J. Vac. Sci. Technol. B 11, 2675–2679 (1993) https://doi.org/10.1116/1.586583
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Key technologies in lower submicron lithography: Ultimate super resolution imaging system and chemically amplified resist using the self‐solubility acceleration effect
Makoto Nakase; Soichi Inoue; Tadahito Fujisawa; Naoko Kihara; Tohru Ushirogouchi
J. Vac. Sci. Technol. B 11, 2680–2685 (1993) https://doi.org/10.1116/1.586584
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Direct aerial image measurement as a method of testing high numerical aperture microlithographic lenses
William N. Partlo; Charles H. Fields; William G. Oldham
J. Vac. Sci. Technol. B 11, 2686–2691 (1993) https://doi.org/10.1116/1.586585
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Performance of 0.2 μm optical lithography using KrF and ArF excimer laser sources
Kazuhiro Yamashita; Masayuki Endo; Masaru Sasago; Noboru Nomura; Hiroyuki Nagano; Shinichi Mizuguchi; Takuhiro Ono; Takeo Sato
J. Vac. Sci. Technol. B 11, 2692–2696 (1993) https://doi.org/10.1116/1.586586
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Optical properties of hydrogenated amorphous‐carbon film for attenuated phase‐shift mask applications
Alessandro Callegari; Andrew T. Pomerene; Harold J. Hovel; Edward D. Babich; Sampath Purushothaman; Jane M. Shaw
J. Vac. Sci. Technol. B 11, 2697–2699 (1993) https://doi.org/10.1116/1.586587
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Image monitor for Markle–Dyson optics
A. Grenville; G. Owen; R. F. W. Pease
J. Vac. Sci. Technol. B 11, 2700–2704 (1993) https://doi.org/10.1116/1.586588
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Printing of phase‐shifting mask defects
R. L. Kostelak; C. Pierrat; J. G. Garofalo; S. Vaidya
J. Vac. Sci. Technol. B 11, 2705–2713 (1993) https://doi.org/10.1116/1.586589
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Advanced dynamic process simulation for an excimer laser lithography
Takeshi Ohfuji; Omkaram Nalamasu; Douglas R. Stone
J. Vac. Sci. Technol. B 11, 2714–2719 (1993) https://doi.org/10.1116/1.586590
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Evaluation of depth‐of‐focus in photolithography at 193 and 248 nm for feature sizes of 0.25 μm and below
M. Rothschild; S. P. Doran; E. Barouch; U. Hollerbach; S. A. Orszag
J. Vac. Sci. Technol. B 11, 2720–2724 (1993) https://doi.org/10.1116/1.586591
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Process issue improvement of surface image transfer technique: Depth‐of‐focus characteristics and their comparison with simulation results
Y. Tomo; T. Ogawa; T. Nagayama; M. Kimura
J. Vac. Sci. Technol. B 11, 2725–2732 (1993) https://doi.org/10.1116/1.586592
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Reduction and elimination of proximity effects
E. A. Dobisz; C. R. K. Marrian; R. E. Salvino; M. A. Ancona; F. K. Perkins; N. H. Turner
J. Vac. Sci. Technol. B 11, 2733–2740 (1993) https://doi.org/10.1116/1.586593
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PROXECCO—Proximity effect correction by convolution
Hans Eisenmann; Thomas Waas; Hans Hartmann
J. Vac. Sci. Technol. B 11, 2741–2745 (1993) https://doi.org/10.1116/1.586594
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Efficiency of electron‐beam proximity effect correction
T. R. Groves
J. Vac. Sci. Technol. B 11, 2746–2753 (1993) https://doi.org/10.1116/1.586595
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Analytical evaluation of the energy deposition function in electron‐beam lithography in the case of a composite substrate
I. Raptis; N. Glezos; M. Hatzakis
J. Vac. Sci. Technol. B 11, 2754–2757 (1993) https://doi.org/10.1116/1.586596
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Two methods of experimental evaluation of long‐range proximity function components in electron‐beam lithography
Alexei L. Bogdanov; Andrei Polyakov
J. Vac. Sci. Technol. B 11, 2758–2761 (1993) https://doi.org/10.1116/1.586597
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Fast proximity effect correction: An extension of PYRAMID for thicker resists
Brian D. Cook; Soo‐Young Lee
J. Vac. Sci. Technol. B 11, 2762–2767 (1993) https://doi.org/10.1116/1.586598
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Incident dose modification for proximity effect correction
M. G. R. Thomson
J. Vac. Sci. Technol. B 11, 2768–2772 (1993) https://doi.org/10.1116/1.586599
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Chemical amplification electron beam positive resist process free from surface insoluble layer
Takeshi Fujino; Hiroshi Maeda; Teruhiko Kumada; Koichi Moriizumi; Shigeru Kubota; Hiroshi Koezuka; Hiroaki Morimoto; Yaichiro Watakabe; Natfuro Tsubouchi
J. Vac. Sci. Technol. B 11, 2773–2778 (1993) https://doi.org/10.1116/1.586600
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Single component deep‐ultraviolet and x‐ray resists: The lithographic behavior of poly[(2‐methyl‐4‐t‐butoxycarbonyloxystyrene)sulfone] and poly[(3‐chloro‐4‐t‐butoxycarbonyloxystyrene)sulfone]
Thomas X. Neenan; Uday Kumar; Janet M. Kometani; Anthony E. Novembre
J. Vac. Sci. Technol. B 11, 2779–2782 (1993) https://doi.org/10.1116/1.586601
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Single‐layer chemically amplified photoresists for 193‐nm lithography
G. M. Wallraff; R. D. Allen; W. D. Hinsberg; C. F. Larson; R. D. Johnson; R. DiPietro; G. Breyta; N. Hacker; R. R. Kunz
J. Vac. Sci. Technol. B 11, 2783–2788 (1993) https://doi.org/10.1116/1.586602
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New silicon‐rich silylating reagents for dry‐developed positive‐tone deep‐ultraviolet lithography
David R. Wheeler; Skip Hutton; Susan Stein; Frank Baiocchi; May Cheng; Gary Taylor
J. Vac. Sci. Technol. B 11, 2789–2793 (1993) https://doi.org/10.1116/1.586603
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Water soluble conducting polyanilines: Applications in lithography
Marie Angelopoulos; Niranjan Patel; Jane M. Shaw; Nancy C. Labianca; Stephen A. Rishton
J. Vac. Sci. Technol. B 11, 2794–2797 (1993) https://doi.org/10.1116/1.586604
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Relationship between resist performance and reaction order in a chemically amplified resist system
Theodore H. Fedynyshyn; Charles R. Szmanda; Robert F. Blacksmith; William E. Houck; Jonathan C. Root
J. Vac. Sci. Technol. B 11, 2798–2806 (1993) https://doi.org/10.1116/1.586605
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Evaluation and application of a very high performance chemically amplified resist for electron‐beam lithography
K. Y. Lee; W. S. Huang
J. Vac. Sci. Technol. B 11, 2807–2811 (1993) https://doi.org/10.1116/1.586606
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Development of positive electron‐beam resist for 50 kV electron‐beam direct‐writing lithography
Toshio Sakamizu; Hidenori Yamaguchi; Hiroshi Shiraishi; Fumio Murai; Takumi Ueno
J. Vac. Sci. Technol. B 11, 2812–2817 (1993) https://doi.org/10.1116/1.586607
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Imaging dissolution rate monitor: Mapping the photoresist response
Monroe Sullivan; James W. Taylor
J. Vac. Sci. Technol. B 11, 2818–2822 (1993) https://doi.org/10.1116/1.586608
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Self‐assembled monolayer electron‐beam resists on GaAs and SiO2
M. J. Lercel; R. C. Tiberio; P. F. Chapman; H. G. Craighead; C. W. Sheen; A. N. Parikh; D. L. Allara
J. Vac. Sci. Technol. B 11, 2823–2828 (1993) https://doi.org/10.1116/1.586609
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Effect of low‐solubility surface layer on development of AZ‐PF514
Azalia A. Krasnoperova; Stephen W. Turner; Leo Ocola; Franco Cerrina
J. Vac. Sci. Technol. B 11, 2829–2833 (1993) https://doi.org/10.1116/1.586610
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Patterning of x‐ray masks using the negative‐acting resist P(SI‐CMS)
D. A. Mixon; A. E. Novembre; W. W. Tai; C. W. Jurgensen; J. Frackoviak; L. E. Trimble; R. R. Kola; G. K. Celler
J. Vac. Sci. Technol. B 11, 2834–2838 (1993) https://doi.org/10.1116/1.586611
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Parametric modeling of photoelectron effects in x‐ray lithography
L. E. Ocola; F. Cerrina
J. Vac. Sci. Technol. B 11, 2839–2844 (1993) https://doi.org/10.1116/1.586612
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Optimization design program for chemically amplified resist process
S.‐W. Pan; M. T. Reilly; J. W. Taylor; F. Cerrina
J. Vac. Sci. Technol. B 11, 2845–2849 (1993) https://doi.org/10.1116/1.586613
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Soft x‐ray photochemistry of chemisorbed self‐assembled monolayers
D. Suh; J. K. Simons; J. W. Taylor; T. S. Koloski; J. M. Calvert
J. Vac. Sci. Technol. B 11, 2850–2854 (1993) https://doi.org/10.1116/1.586614
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Dissolution rate properties of three‐component deep‐ultraviolet positive photoresists
James W. Thackeray; Mark Denison; Theodore H. Fedynyshyn; Jacque Georger; J. Michael Mori; George W. Orsula
J. Vac. Sci. Technol. B 11, 2855–2861 (1993) https://doi.org/10.1116/1.586615
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Simulation of locally enhanced three‐dimensional diffusion in chemically amplified resists
M. Zuniga; G. Wallraff; E. Tomacruz; B. Smith; C. Larson; W. D. Hinsburg; A. R. Neureuther
J. Vac. Sci. Technol. B 11, 2862–2866 (1993) https://doi.org/10.1116/1.586616
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Insolubilization mechanism of chemically amplified negative photoresists
Atsumi Yamaguchi; Shinji Kishimura; Kouichiro Tsujita; Hiroaki Morimoto; Katsuhiro Tsukamoto; Hitoshi Nagata
J. Vac. Sci. Technol. B 11, 2867–2871 (1993) https://doi.org/10.1116/1.586617
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Study of electron beam patterning of resist on tungsten x‐ray masks
K. D. Cummings; D. J. Resnick; J. Frackoviak; R. R. Kola; L. E. Trimble; B. Grant; S. Silverman; L. Haas; B. Jennings
J. Vac. Sci. Technol. B 11, 2872–2875 (1993) https://doi.org/10.1116/1.586618
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Patterning issues of 256MB dynamic random access memory x‐ray masks
B. Koek; B. Jennings; R. Grant
J. Vac. Sci. Technol. B 11, 2876–2880 (1993) https://doi.org/10.1116/1.586619
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Effect of mask absorber thickness on x‐ray exposure latitude and resolution
M. A. McCord; A. Wagner; D. Seeger
J. Vac. Sci. Technol. B 11, 2881–2887 (1993) https://doi.org/10.1116/1.586620
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Overlay performance of x‐ray steppers in IBM Advance Lithography Facility
C. J. Progler; A. C. Chen; T. A. Gunther; P. Kaiser; K. A. Cooper; R. E. Hughlett
J. Vac. Sci. Technol. B 11, 2888–2896 (1993) https://doi.org/10.1116/1.586556
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Sub‐half‐micron metal–oxide–semiconductor device fabrication using a compact synchrotron radiation lithography system
K. Fujii; S. Tsuboi; T. Yoshihara; Y. Tanaka; K. Suzuki; S. Setoguchi; T. Miyatake
J. Vac. Sci. Technol. B 11, 2897–2901 (1993) https://doi.org/10.1116/1.586557
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Experimental study of aerial images in x‐ray lithography
Jerry Z. Y. Guo; Q. Leonard; F. Cerrina; E. Di Fabrizio; L. Luciani; M. Gentili; J. Frank
J. Vac. Sci. Technol. B 11, 2902–2905 (1993) https://doi.org/10.1116/1.586558
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Fabrication of flip‐bonded mesa masks for x‐ray lithography
M. L. Schattenburg; N. A. Polce; Henry I. Smith; R. Stein
J. Vac. Sci. Technol. B 11, 2906–2909 (1993) https://doi.org/10.1116/1.586559
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Fabrication of high performance 512K static‐random access memories in 0.25 μm complementary metal–oxide semiconductor technology using x‐ray lithography
R. Viswanathan; D. Seeger; A. Bright; T. Bucelot; A. Pomerene; K. Petrillo; P. Blauner; P. Agnello; J. Warlaumont; J. Conway; D. Patel
J. Vac. Sci. Technol. B 11, 2910–2919 (1993) https://doi.org/10.1116/1.586560
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X‐ray mask membrane motion in narrow gap lithography: Hydrodynamic model and experiment
A. W. Yanof; G. L. Zipfel; E. E. Moon
J. Vac. Sci. Technol. B 11, 2920–2925 (1993) https://doi.org/10.1116/1.586561
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Repair of soft‐x‐ray optical elements by stripping and redeposition of Mo/Si reflective coatings
K. Early; D. L. Windt; W. K. Waskiewicz; O. R. Wood, II; D. M. Tennant
J. Vac. Sci. Technol. B 11, 2926–2929 (1993) https://doi.org/10.1116/1.586562
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Physical properties of the x‐ray membrane materials
M. A. El Khakani; M. Chaker
J. Vac. Sci. Technol. B 11, 2930–2937 (1993) https://doi.org/10.1116/1.586563
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Development of an electron‐beam process for the fabrication of x‐ray nanomasks
M. Gentili; L. Grella; E. Di Fabrizio; L. Luciani; M. Baciocchi; M. Figliomeni; R. Maggiora; L. Mastrogiacomo; F. Cerrina
J. Vac. Sci. Technol. B 11, 2938–2942 (1993) https://doi.org/10.1116/1.586564
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Pattern formation in amorphous WNx by low temperature electron cyclotron resonance etching for fabrication of x‐ray mask
Takayoshi Inoue; Toshihiko Kanayama; Masanori Komuro
J. Vac. Sci. Technol. B 11, 2943–2946 (1993) https://doi.org/10.1116/1.586565
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Stress and microstructure of sputter‐deposited thin films: Molecular dynamics simulations and experiment
C. C. Fang; F. Jones; R. R. Kola; G. K. Celler; V. Prasad
J. Vac. Sci. Technol. B 11, 2947–2952 (1993) https://doi.org/10.1116/1.586566
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Practical considerations in x‐ray mask mounting methodology
D. L. Laird; M. F. Laudon; R. L. Engelstad
J. Vac. Sci. Technol. B 11, 2953–2957 (1993) https://doi.org/10.1116/1.586567
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Resolution limits and process latitude of x‐ray mask fabrication
M. A. McCord; A. Wagner; T. Donohue
J. Vac. Sci. Technol. B 11, 2958–2963 (1993) https://doi.org/10.1116/1.586568
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Defect coverage profile and propagation of roughness of sputter‐deposited Mo/Si multilayer coating for extreme ultraviolet projection lithography
K. B. Nguyen; T. D. Nguyen
J. Vac. Sci. Technol. B 11, 2964–2970 (1993) https://doi.org/10.1116/1.586569
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X‐ray mask replication using square synchrotron radiation illumination
M. Reilly; G. M. Wells; J. Guo; J. P. Wallace; N. Edwards; F. Cerrina; J. Melngailis
J. Vac. Sci. Technol. B 11, 2971–2975 (1993) https://doi.org/10.1116/1.586570
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Performance of a wide‐field flux delivery system for synchrotron x‐ray lithography
J. P. Silverman; C. N. Archie; J. M. Oberschmidt; R. P. Rippstein
J. Vac. Sci. Technol. B 11, 2976–2980 (1993) https://doi.org/10.1116/1.586571
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Simultaneous optimization of spectrum, spatial coherence, gap, feature bias, and absorber thickness in synchrotron‐based x‐ray lithography
Scott D. Hector; Henry I. Smith; M. L. Schattenburg
J. Vac. Sci. Technol. B 11, 2981–2985 (1993) https://doi.org/10.1116/1.586572
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Soft x‐ray production from laser produced plasmas for lithography applications
R. C. Spitzer; R. L. Kauffman; T. Orzechowski; D. W. Phillion; C. Cerjan
J. Vac. Sci. Technol. B 11, 2986–2989 (1993) https://doi.org/10.1116/1.586573
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Low stress and optically transparent chromium oxide layer for x‐ray mask making
Jutta Trube; Hideki Yabe; Sunao Aya; Kenji Marumoto; Yasuji Matsui
J. Vac. Sci. Technol. B 11, 2990–2993 (1993) https://doi.org/10.1116/1.586574
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X‐ray mask fabrication using advanced optical lithography
S. Tsuboi; K. Suzuki
J. Vac. Sci. Technol. B 11, 2994–2996 (1993) https://doi.org/10.1116/1.586575
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X‐ray stepper aiming at 0.2 μm synchrotron orbital radiation lithography
Norio Uchida; Osamu Kuwabara; Yoriyuki Ishibashi; Nobutaka Kikuiri; Ryoichi Hirano; Jun Nishida; Takeshi Nishizaka; Yukiko Kikuchi; Hisakazu Yoshino
J. Vac. Sci. Technol. B 11, 2997–3002 (1993) https://doi.org/10.1116/1.586576
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Polycapillary collimator for point source proximity x‐ray lithography
M. Vartanian; R. Youngman; D. Gibson; J. Drumheller; R. Frankel
J. Vac. Sci. Technol. B 11, 3003–3007 (1993) https://doi.org/10.1116/1.586577
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Evaluation of beryllium foils for x‐ray lithography beamlines
G. M. Wells; E. L. Brodsky; F. Cerrina; W. G. Waldo
J. Vac. Sci. Technol. B 11, 3008–3011 (1993) https://doi.org/10.1116/1.586885
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