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May 1993

This content was originally published in

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

ISSN 1071-1023

EISSN 1520-8567

Localized thinning of GaAs/GaAlAs nanostructures by a combined scanning electron micrograph/focus ion beam system for high‐quality cross‐sectional transmission electron microscopy samples

G. Ben Assayag; C. Vieu; J. Gierak; H. Chaabane; A. Pepin; P. Henoc

J. Vac. Sci. Technol. B 11, 531–535 (1993) https://doi.org/10.1116/1.586840

Abstract

View articletitled, Localized thinning of GaAs/GaAlAs nanostructures by a combined scanning electron micrograph/focus ion beam system for high‐quality cross‐sectional transmission electron microscopy samples

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Selective regrowth of InP and GaAs by organometallic vapor phase epitaxy and metalorganic molecular beam epitaxy around dry etched features

W. S. Hobson; S. J. Pearton; C. R. Abernathy; F. Ren; J. R. Lothian

J. Vac. Sci. Technol. B 11, 536–541 (1993) https://doi.org/10.1116/1.586796

Abstract

View articletitled, Selective regrowth of InP and GaAs by organometallic vapor phase epitaxy and metalorganic molecular beam epitaxy around dry etched features

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Influence of substrate temperature on the growth of InGaAs layers on (111)B GaAs

H. M. Yoo; F. S. Ohuchi; T. G. Stoebe

J. Vac. Sci. Technol. B 11, 542–545 (1993) https://doi.org/10.1116/1.586797

Abstract

View articletitled, Influence of substrate temperature on the growth of InGaAs layers on (111)B GaAs

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Dry surface cleaning of plasma‐etched high electron mobility transistors

S. J. Pearton; F. Ren; A. Katz; U. K. Chakrabarti; E. Lane; W. S. Hobson; R. F. Kopf; C. R. Abernathy; C. S. Wu; D. A. Bohling; J. C. Ivankovits

J. Vac. Sci. Technol. B 11, 546–550 (1993) https://doi.org/10.1116/1.586798

Abstract

View articletitled, Dry surface cleaning of plasma‐etched high electron mobility transistors

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Dry etching of CdTe/GaAs epilayers using CH₄/H₂ gas mixtures

M. Neswal; K. H. Gresslehner; K. Lischka; K. Lübke

J. Vac. Sci. Technol. B 11, 551–555 (1993) https://doi.org/10.1116/1.586799

Abstract

View articletitled, Dry etching of CdTe/GaAs epilayers using CH4/H2 gas mixtures

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Digital etching of III–V multilayered structures combined with laser ionization mass spectroscopy: Photon‐assisted depth profiling

Orson L. Bourne; D’Arcy Hart; David. M. Rayner; Peter Andrew Hackett

J. Vac. Sci. Technol. B 11, 556–561 (1993) https://doi.org/10.1116/1.586800

Abstract

View articletitled, Digital etching of III–V multilayered structures combined with laser ionization mass spectroscopy: Photon‐assisted depth profiling

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Surface morphology and quality of strained InGaAs grown by molecular‐beam epitaxy on GaAs

Soon Fatt Yoon

J. Vac. Sci. Technol. B 11, 562–566 (1993) https://doi.org/10.1116/1.586801

Abstract

View articletitled, Surface morphology and quality of strained InGaAs grown by molecular‐beam epitaxy on GaAs

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Effect of substrate temperature on ultrahigh vacuum interfaces of indium oxide/GaAs(110)

A. Golan; Yoram Shapira; M. Eizenberg

J. Vac. Sci. Technol. B 11, 567–571 (1993) https://doi.org/10.1116/1.586802

Abstract

View articletitled, Effect of substrate temperature on ultrahigh vacuum interfaces of indium oxide/GaAs(110)

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Annealing behavior of Au(Te)/n‐GaAs contacts

A. Piotrowska; E. Kamińska; X. W. Lin; Z. Liliental‐Weber; J. Washburn; E. Weber; S. Gierlotka; J. Adamczewska; S. Kwiatkowski; A. Turos

J. Vac. Sci. Technol. B 11, 572–580 (1993) https://doi.org/10.1116/1.586803

Abstract

View articletitled, Annealing behavior of Au(Te)/n‐GaAs contacts

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Lateral straggle of Si and Be focused‐ion beam implanted in GaAs

D. Vignaud; C. R. Musil; S. Etchin; D. A. Antoniadis; J. Melngailis

J. Vac. Sci. Technol. B 11, 581–586 (1993) https://doi.org/10.1116/1.586804

Abstract

View articletitled, Lateral straggle of Si and Be focused‐ion beam implanted in GaAs

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Effect of crystalline defects on electrical properties of heavily Si‐doped strain‐relaxed In_0.5Ga_0.5As layers grown by molecular beam epitaxy on GaAs

James S. C. Chang; George A. Patterson

J. Vac. Sci. Technol. B 11, 587–592 (1993) https://doi.org/10.1116/1.586805

Abstract

View articletitled, Effect of crystalline defects on electrical properties of heavily Si‐doped strain‐relaxed In0.5Ga0.5As layers grown by molecular beam epitaxy on GaAs

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Photoluminescence and Hall characterization of pseudomorphic GaAs/InGaAs/AlGaAs heterostructures grown by molecular‐beam epitaxy

M. V. Baeta Moreira; M. A. Py; M. Ilegems

J. Vac. Sci. Technol. B 11, 593–600 (1993) https://doi.org/10.1116/1.586806

Abstract

View articletitled, Photoluminescence and Hall characterization of pseudomorphic GaAs/InGaAs/AlGaAs heterostructures grown by molecular‐beam epitaxy

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Molecular‐beam epitaxial growth and characterization of modulation‐doped field‐effect transistor heterostructures using InAs/GaAs superlattice channels

M. V. Baeta Moreira; M. A. Py; M. Ilegems

J. Vac. Sci. Technol. B 11, 601–609 (1993) https://doi.org/10.1116/1.586807

Abstract

View articletitled, Molecular‐beam epitaxial growth and characterization of modulation‐doped field‐effect transistor heterostructures using InAs/GaAs superlattice channels

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Electron‐induced nitridation of GaAs(100) with ammonia

Y.‐M. Sun; J. G. Ekerdt

J. Vac. Sci. Technol. B 11, 610–613 (1993) https://doi.org/10.1116/1.586808

Abstract

View articletitled, Electron‐induced nitridation of GaAs(100) with ammonia

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Determination of the mechanical stress in plasma enhanced chemical vapor deposited SiO₂ and SiN layers

P. Ambrée; F. Kreller; R. Wolf; K. Wandel

J. Vac. Sci. Technol. B 11, 614–617 (1993) https://doi.org/10.1116/1.586809

Abstract

View articletitled, Determination of the mechanical stress in plasma enhanced chemical vapor deposited SiO2 and SiN layers

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Selective reactive ion etching in SiCl₄/SiF₄ plasmas for gate recess in GaAs/AlGaAs modulation‐doped field effect transistors

D. G. Ballegeer; S. Agarwala; M. Tong; K. Nummila; A. A. Ketterson; I. Adesida; J. Griffin; M. Spencer

J. Vac. Sci. Technol. B 11, 618–627 (1993) https://doi.org/10.1116/1.586810

Abstract

View articletitled, Selective reactive ion etching in SiCl4/SiF4 plasmas for gate recess in GaAs/AlGaAs modulation‐doped field effect transistors

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Fabrication of nanostructures with multilevel architecture

R. P. Taylor; J. A. Adams; M. Davies; P. A. Marshall; R. Barber

J. Vac. Sci. Technol. B 11, 628–633 (1993) https://doi.org/10.1116/1.586811

Abstract

View articletitled, Fabrication of nanostructures with multilevel architecture

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Integrated electrostatically resonant scan tip for an atomic force microscope

L. C. Kong; B. G. Orr; K. D. Wise

J. Vac. Sci. Technol. B 11, 634–641 (1993) https://doi.org/10.1116/1.586812

Abstract

View articletitled, Integrated electrostatically resonant scan tip for an atomic force microscope

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Fabrication and characterization of electron beam evaporated silicon field emitter arrays

G. P. Myers; M. Aslam; P. Klimecky; L. W. Cathey; R. E. Elder; B. E. Artz

J. Vac. Sci. Technol. B 11, 642–646 (1993) https://doi.org/10.1116/1.586813

Abstract

View articletitled, Fabrication and characterization of electron beam evaporated silicon field emitter arrays

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Influences of gases on the field emission

S. Itoh; T. Niiyama; M. Yokoyama

J. Vac. Sci. Technol. B 11, 647–650 (1993) https://doi.org/10.1116/1.586814

Abstract

View articletitled, Influences of gases on the field emission

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Local modification of HF‐treated silicon (100) surface and its characterization by scanning tunneling microscopy and spectroscopy

F. Pérez‐Murano; N. Barniol; X. Aymerich

J. Vac. Sci. Technol. B 11, 651–657 (1993) https://doi.org/10.1116/1.586815

Abstract

View articletitled, Local modification of HF‐treated silicon (100) surface and its characterization by scanning tunneling microscopy and spectroscopy

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Multiple‐exposure interferometric lithography

Saleem H. Zaidi; S. R. J. Brueck

J. Vac. Sci. Technol. B 11, 658–666 (1993) https://doi.org/10.1116/1.586816

Abstract

View articletitled, Multiple‐exposure interferometric lithography

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Properties of electromagnetic fields in x‐ray lithographic masks: Guided modes and beam propagation calculus

R. K. Kupka; Y. Chen; F. Rousseaux; A. M. Haghiri‐Gosnet; H. Launois

J. Vac. Sci. Technol. B 11, 667–680 (1993) https://doi.org/10.1116/1.586817

Abstract

View articletitled, Properties of electromagnetic fields in x‐ray lithographic masks: Guided modes and beam propagation calculus

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Modeling of positive‐tone silylation processes for 193‐nm lithography

Mark A. Hartney

J. Vac. Sci. Technol. B 11, 681–687 (1993) https://doi.org/10.1116/1.586818

Abstract

View articletitled, Modeling of positive‐tone silylation processes for 193‐nm lithography

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Fluorescence behavior of diazonaphthoquinone‐type photoresist materials

J. J. M. Vleggaar; A. H. Huizer; C. A. G. O. Varma; P. A. Kraakman; W. P. N. Nijssen; R. J. Visser

J. Vac. Sci. Technol. B 11, 688–698 (1993) https://doi.org/10.1116/1.586774

Abstract

View articletitled, Fluorescence behavior of diazonaphthoquinone‐type photoresist materials

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Cleaning of silicon surfaces by argon microwave multipolar plasmas excited by distributed electron cyclotron resonance

P. Raynaud; C. Pomot

J. Vac. Sci. Technol. B 11, 699–708 (1993) https://doi.org/10.1116/1.586775

Abstract

View articletitled, Cleaning of silicon surfaces by argon microwave multipolar plasmas excited by distributed electron cyclotron resonance

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Electronic defects induced in p‐ and n‐type silicon by SF₆ plasma etching

A. Belkacem; Y. Arnal; A. Chantre; C. Pomot

J. Vac. Sci. Technol. B 11, 709–716 (1993) https://doi.org/10.1116/1.586776

Abstract

View articletitled, Electronic defects induced in p‐ and n‐type silicon by SF6 plasma etching

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High‐resolution reactive ion etching of SiGe alloys

J. G. Couillard; H. G. Craighead

J. Vac. Sci. Technol. B 11, 717–719 (1993) https://doi.org/10.1116/1.586777

Abstract

View articletitled, High‐resolution reactive ion etching of SiGe alloys

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Two precursor model for low‐pressure chemical vapor deposition of silicon dioxide from tetraethylorthosilicate

M. M. IslamRaja; C. Chang; J. P. McVittie; M. A. Cappelli; K. C. Saraswat

J. Vac. Sci. Technol. B 11, 720–726 (1993) https://doi.org/10.1116/1.586778

Abstract

View articletitled, Two precursor model for low‐pressure chemical vapor deposition of silicon dioxide from tetraethylorthosilicate

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Kinetics and mechanism for desorption of H₂O from spin‐on‐glass

Harland G. Tompkins; Paul W. Deal

J. Vac. Sci. Technol. B 11, 727–733 (1993) https://doi.org/10.1116/1.586779

Abstract

View articletitled, Kinetics and mechanism for desorption of H2O from spin‐on‐glass

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Silane reduced chemical vapor deposition tungsten as a nucleating step in blanket W

E. J. McInerney; T. W. Mountsier; B. L. Chin; E. K. Broadbent

J. Vac. Sci. Technol. B 11, 734–743 (1993) https://doi.org/10.1116/1.586780

Abstract

View articletitled, Silane reduced chemical vapor deposition tungsten as a nucleating step in blanket W

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Evaluation of in situ formed W–Ti and MoSi₂ as a diffusion barrier to Al for CoSi₂ silicided contact

Fann‐Mei Yang; Mao‐Chieh Chen

J. Vac. Sci. Technol. B 11, 744–751 (1993) https://doi.org/10.1116/1.586781

Abstract

View articletitled, Evaluation of in situ formed W–Ti and MoSi2 as a diffusion barrier to Al for CoSi2 silicided contact

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Epitaxial surface of NiSi₂ (001) studied with low‐energy electron diffraction and scanning tunneling microscopy

R. S. Becker; A. J. Becker; J. Sullivan; R. T. Tung

J. Vac. Sci. Technol. B 11, 752–755 (1993) https://doi.org/10.1116/1.586782

Abstract

View articletitled, Epitaxial surface of NiSi2 (001) studied with low‐energy electron diffraction and scanning tunneling microscopy

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Thermal stability of Mo–Al Schottky metallizations on n‐GaAs

T. S. Huang; J. G. Peng; C. C. Lin

J. Vac. Sci. Technol. B 11, 756–762 (1993) https://doi.org/10.1116/1.586783

Abstract

View articletitled, Thermal stability of Mo–Al Schottky metallizations on n‐GaAs

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Patterning of C₆₀ films

A. V. Hamza; M. Balooch; R. J. Tench; M. A. Schildbach; R. A. Hawley‐Fedder; H. W. H. Lee; C. McConaghy

J. Vac. Sci. Technol. B 11, 763–765 (1993) https://doi.org/10.1116/1.586784

Abstract

View articletitled, Patterning of C60 films

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Erratum: ‘‘Ballistic electron emission microscopy investigation of SiGe nanostructures fabricated using reactive‐ion etching’’ [J. Vac. Sci. Technol. B 10, 3112 (1992)]

J. G. Couillard; A. Davies; H. G. Craighead

J. Vac. Sci. Technol. B 11, 766 (1993) https://doi.org/10.1116/1.586785

View articletitled, Erratum: ‘‘Ballistic electron emission microscopy investigation of SiGe nanostructures fabricated using reactive‐ion etching’’ [J. Vac. Sci. Technol. B 10, 3112 (1992)]

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Scanning tunneling microscopy study of molecular‐beam epitaxial growth of GaAs on GaAs(001)

J. Sudijono; M. D. Johnson; C. W. Snyder; B. G. Orr

J. Vac. Sci. Technol. B 11, 775–778 (1993) https://doi.org/10.1116/1.586786

Abstract

View articletitled, Scanning tunneling microscopy study of molecular‐beam epitaxial growth of GaAs on GaAs(001)

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Molecular‐beam epitaxy on exact and vicinal GaAs(1̄1̄1̄) substrates

K. Yang; L. J. Schowalter; B. K. Laurich; I. H. Campell; D. L. Smith

J. Vac. Sci. Technol. B 11, 779–782 (1993) https://doi.org/10.1116/1.586787

Abstract

View articletitled, Molecular‐beam epitaxy on exact and vicinal GaAs(1̄1̄1̄) substrates

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Arsenic reflection from GaAs and AlGaAs surfaces during molecular‐beam epitaxy

A. J. SpringThorpe; D. J. Arent

J. Vac. Sci. Technol. B 11, 783–786 (1993) https://doi.org/10.1116/1.586788

Abstract

View articletitled, Arsenic reflection from GaAs and AlGaAs surfaces during molecular‐beam epitaxy

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New selective molecular‐beam epitaxial growth method for direct formation of GaAs quantum dots

Nobuyuki Koguchi; Keiko Ishige; Satoshi Takahashi

J. Vac. Sci. Technol. B 11, 787–790 (1993) https://doi.org/10.1116/1.586789

Abstract

View articletitled, New selective molecular‐beam epitaxial growth method for direct formation of GaAs quantum dots

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Molecular‐beam epitaxial growth condition dependence of reflection high‐energy electron diffraction dampening and quantum well photoluminescence

T. R. Block; D. P. Neikirk; B. G. Streetman

J. Vac. Sci. Technol. B 11, 791–794 (1993) https://doi.org/10.1116/1.586790

Abstract

View articletitled, Molecular‐beam epitaxial growth condition dependence of reflection high‐energy electron diffraction dampening and quantum well photoluminescence

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Arsenic cluster engineering for excitonic electro‐optics

M. R. Melloch; D. D. Nolte; N. Otsuka; C. L. Chang; J. M. Woodall

J. Vac. Sci. Technol. B 11, 795–797 (1993) https://doi.org/10.1116/1.586791

Abstract

View articletitled, Arsenic cluster engineering for excitonic electro‐optics

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Structural and electrical properties of low temperature GaInAs

R. A. Metzger; A. S. Brown; L. G. McCray; J. A. Henige

J. Vac. Sci. Technol. B 11, 798–801 (1993) https://doi.org/10.1116/1.586792

Abstract

View articletitled, Structural and electrical properties of low temperature GaInAs

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Improved optical properties of low temperature molecular‐beam epitaxially grown AlGaAs by In incorporation

Takeshi Tomioka; Shigehiko Sasa; Toshio Fujii

J. Vac. Sci. Technol. B 11, 802–804 (1993) https://doi.org/10.1116/1.586793

Abstract

View articletitled, Improved optical properties of low temperature molecular‐beam epitaxially grown AlGaAs by In incorporation

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Effect of structural and chemical parameters on the optical properties of highly strained AlGaAs/InGaAs/AlGaAs quantum wells

Kian Kaviani; Li Chen; Kezhong Hu; Qianghua Xie; Anupam Madhukar

J. Vac. Sci. Technol. B 11, 805–808 (1993) https://doi.org/10.1116/1.586794

Abstract

View articletitled, Effect of structural and chemical parameters on the optical properties of highly strained AlGaAs/InGaAs/AlGaAs quantum wells

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Multiple quantum wells consisting of InAs/GaAs short‐period strained‐layer superlattice wells for 1.3–1.55 μm photonic applications

T. C. Hasenberg

J. Vac. Sci. Technol. B 11, 809–812 (1993) https://doi.org/10.1116/1.586795

Abstract

View articletitled, Multiple quantum wells consisting of InAs/GaAs short‐period strained‐layer superlattice wells for 1.3–1.55 μm photonic applications

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Band offset determination in parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs

R. F. Kopf; M. H. Herman; M. L. Schnoes; C. Colvard

J. Vac. Sci. Technol. B 11, 813–816 (1993) https://doi.org/10.1116/1.586752

Abstract

View articletitled, Band offset determination in parabolic and triangular quantum wells of GaAs/AlGaAs and GaInAs/AlInAs

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Growth and properties of AlInAs–GaInAs alloys and quantum wells on (110) InP

A. S. Brown; R. A. Metzger; J. A. Henige

J. Vac. Sci. Technol. B 11, 817–819 (1993) https://doi.org/10.1116/1.586753

Abstract

View articletitled, Growth and properties of AlInAs–GaInAs alloys and quantum wells on (110) InP

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Migration‐enhanced epitaxial growth of GaAs on Si using (GaAs)_1−x(Si₂)_x/GaAs strained‐layer superlattice buffer layers

T. Sudersena Rao; K. Nozawa; Y. Horikoshi

J. Vac. Sci. Technol. B 11, 820–822 (1993) https://doi.org/10.1116/1.586754

Abstract

View articletitled, Migration‐enhanced epitaxial growth of GaAs on Si using (GaAs)1−x(Si2)x/GaAs strained‐layer superlattice buffer layers

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Molecular‐beam epitaxial growth of arsenide/phosphide heterostructures using valved, solid group V sources

F. G. Johnson; G. W. Wicks; R. E. Viturro; R. LaForce

J. Vac. Sci. Technol. B 11, 823–825 (1993) https://doi.org/10.1116/1.586755

Abstract

View articletitled, Molecular‐beam epitaxial growth of arsenide/phosphide heterostructures using valved, solid group V sources

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Optimization of interfaces in arsenide–phosphide compounds grown by gas source molecular‐beam epitaxy

A. M. Moy; A. C. Chen; S. L. Jackson; X. Liu; K. Y. Cheng; G. E. Stillman; S. G. Bishop

J. Vac. Sci. Technol. B 11, 826–829 (1993) https://doi.org/10.1116/1.586756

Abstract

View articletitled, Optimization of interfaces in arsenide–phosphide compounds grown by gas source molecular‐beam epitaxy

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Growth of Ga_xIn_1−xP/Ga_0.5In_0.5P multiple‐quantum wires by strain induced lateral layer ordering process

A. C. Chen; A. M. Moy; P. J. Pearah; K. C. Hsieh; K. Y. Cheng

J. Vac. Sci. Technol. B 11, 830–832 (1993) https://doi.org/10.1116/1.586757

Abstract

View articletitled, Growth of GaxIn1−xP/Ga0.5In0.5P multiple‐quantum wires by strain induced lateral layer ordering process

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Measurement of indium desorption activation energy from InP layers by laser induced fluorescence

Chau‐Hong Kuo; Calvin Choi; George N. Maracas; Timothy C. Steimle

J. Vac. Sci. Technol. B 11, 833–835 (1993) https://doi.org/10.1116/1.586758

Abstract

View articletitled, Measurement of indium desorption activation energy from InP layers by laser induced fluorescence

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Nature and origin of residual impurities in high‐purity GaAs and InP grown by chemical beam epitaxy

A. P. Roth; T. Sudersena Rao; R. Benzaquen; C. Lacelle; S. Rolfe

J. Vac. Sci. Technol. B 11, 836–839 (1993) https://doi.org/10.1116/1.586759

Abstract

View articletitled, Nature and origin of residual impurities in high‐purity GaAs and InP grown by chemical beam epitaxy

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Growth of high‐purity InP by chemical beam epitaxy

T. Sudersena Rao; C. Lacelle; A. P. Roth

J. Vac. Sci. Technol. B 11, 840–842 (1993) https://doi.org/10.1116/1.586760

Abstract

View articletitled, Growth of high‐purity InP by chemical beam epitaxy

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Interface and relaxation properties of chemical beam epitaxy grown GaP/GaAs structures

A. Freundlich; A. Bensaoula; A. H. Bensaoula; V. Rossignol

J. Vac. Sci. Technol. B 11, 843–846 (1993) https://doi.org/10.1116/1.586761

Abstract

View articletitled, Interface and relaxation properties of chemical beam epitaxy grown GaP/GaAs structures

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Chemical beam epitaxial growth of InP, InGaP, and InAs heterojunctions using triethylindium and bisphosphinoethane

Albert Chin; Paul Martin; Utpal Das; John Mazurowski; Jim Ballingall

J. Vac. Sci. Technol. B 11, 847–850 (1993) https://doi.org/10.1116/1.586762

Abstract

View articletitled, Chemical beam epitaxial growth of InP, InGaP, and InAs heterojunctions using triethylindium and bisphosphinoethane

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Chemical beam epitaxy of In_xAs_1−xP/InP strained single and multiquantum well structures

A. Bensaoula; V. Rossignol; A. H. Bensaoula; A. Freundlich

J. Vac. Sci. Technol. B 11, 851–853 (1993) https://doi.org/10.1116/1.586763

Abstract

View articletitled, Chemical beam epitaxy of InxAs1−xP/InP strained single and multiquantum well structures

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Characterization of GaAs/GaAsP strained multiple quantum wells grown by gas‐source molecular beam epitaxy

H. Q. Hou; C. W. Tu; W. Shan; S. J. Hwang; J. J. Song; S. N. G. Chu

J. Vac. Sci. Technol. B 11, 854–856 (1993) https://doi.org/10.1116/1.586764

Abstract

View articletitled, Characterization of GaAs/GaAsP strained multiple quantum wells grown by gas‐source molecular beam epitaxy

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Gas‐source molecular‐beam epitaxy of InGaP and GaAs on strained‐relaxed Ge_xSi₁₋_x/Si

J. M. Kuo; E. A. Fitzgerald; Y. H. Xie; P. J. Silverman

J. Vac. Sci. Technol. B 11, 857–860 (1993) https://doi.org/10.1116/1.586765

Abstract

View articletitled, Gas‐source molecular‐beam epitaxy of InGaP and GaAs on strained‐relaxed GexSi1−x/Si

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Optimum growth temperature determination for GaInSb/InAs strained layer superlattices

J. L. Davis; R. J. Wagner; J. R. Waterman; B. V. Shanabrook; J. P. Omaggio

J. Vac. Sci. Technol. B 11, 861–863 (1993) https://doi.org/10.1116/1.586766

Abstract

View articletitled, Optimum growth temperature determination for GaInSb/InAs strained layer superlattices

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Molecular‐beam epitaxial growth of high‐mobility n‐GaSb

G. W. Turner; S. J. Eglash; A. J. Strauss

J. Vac. Sci. Technol. B 11, 864–867 (1993) https://doi.org/10.1116/1.586767

Abstract

View articletitled, Molecular‐beam epitaxial growth of high‐mobility n‐GaSb

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On the interface structure in InAs/AlSb quantum wells grown by molecular‐beam epitaxy

C. R. Bolognesi; I. Sela; J. Ibbetson; B. Brar; H. Kroemer; J. H. English

J. Vac. Sci. Technol. B 11, 868–871 (1993) https://doi.org/10.1116/1.586768

Abstract

View articletitled, On the interface structure in InAs/AlSb quantum wells grown by molecular‐beam epitaxy

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Molecular‐beam epitaxial growth of InSb on GaAs and Si for infrared detector applications

L. K. Li; Y. Hsu; W. I. Wang

J. Vac. Sci. Technol. B 11, 872–874 (1993) https://doi.org/10.1116/1.586769

Abstract

View articletitled, Molecular‐beam epitaxial growth of InSb on GaAs and Si for infrared detector applications

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Ultraviolet quantum well structures based on ZnS/ZnS_1−xSe_x and ZnS/Zn_1−xCd_xS multilayers grown by molecular‐beam epitaxy

R. P. Vaudo; D. B. Eason; K. A. Bowers; K. J. Gossett; J. W. Cook, Jr.; J. F. Schetzina

J. Vac. Sci. Technol. B 11, 875–877 (1993) https://doi.org/10.1116/1.586770

Abstract

View articletitled, Ultraviolet quantum well structures based on ZnS/ZnS1−xSex and ZnS/Zn1−xCdxS multilayers grown by molecular‐beam epitaxy

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Low‐temperature epitaxial growth of Zn chalcogenides on GaAs(001) by postheated molecular beams

Minoru Yoneta; Tetsuya Hamasaki; Masakazu Ohishi; Hiroshi Saito

J. Vac. Sci. Technol. B 11, 878–880 (1993) https://doi.org/10.1116/1.586771

Abstract

View articletitled, Low‐temperature epitaxial growth of Zn chalcogenides on GaAs(001) by postheated molecular beams

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Molecular‐beam epitaxy investigation of interface disorder effects in magnetic II–VI quantum wells

W. E. Hagston; P. Harrison; J. H. C. Hogg; S. Jackson; J. E. Nicholls; T. Stirner; B. Lunn; D. E. Ashenford

J. Vac. Sci. Technol. B 11, 881–884 (1993) https://doi.org/10.1116/1.586772

Abstract

View articletitled, Molecular‐beam epitaxy investigation of interface disorder effects in magnetic II–VI quantum wells

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Enhancement of Hall mobility in coupled δ‐doped layers grown by molecular‐beam epitaxy

T. K. Carns; X. Zheng; B. J. Wu; K. L. Wang

J. Vac. Sci. Technol. B 11, 885–888 (1993) https://doi.org/10.1116/1.586773

Abstract

View articletitled, Enhancement of Hall mobility in coupled δ‐doped layers grown by molecular‐beam epitaxy

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On the breakdown of layer‐by‐layer growth and the spontaneous nucleation of misfit dislocations in molecular‐beam epitaxially grown GeSi/Si

D. D. Perovic; D. C. Houghton; J.‐P. Noël; N. L. Rowell

J. Vac. Sci. Technol. B 11, 889–891 (1993) https://doi.org/10.1116/1.586730

Abstract

View articletitled, On the breakdown of layer‐by‐layer growth and the spontaneous nucleation of misfit dislocations in molecular‐beam epitaxially grown GeSi/Si

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Deep level transient spectroscopy and admittance spectroscopy of Si_1−xGe_x/Si grown by gas‐source molecular‐beam epitaxy

S. H. Li; S. R. Smith; P. K. Bhattacharya; S. W. Chung; W. C. Mitchel

J. Vac. Sci. Technol. B 11, 892–894 (1993) https://doi.org/10.1116/1.586731

Abstract

View articletitled, Deep level transient spectroscopy and admittance spectroscopy of Si1−xGex/Si grown by gas‐source molecular‐beam epitaxy

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Luminescence from Si_1−xGe_x/Si quantum wells grown by Si molecular‐beam epitaxy

S. Fukatsu; N. Usami; Y. Shiraki

J. Vac. Sci. Technol. B 11, 895–898 (1993) https://doi.org/10.1116/1.586732

Abstract

View articletitled, Luminescence from Si1−xGex/Si quantum wells grown by Si molecular‐beam epitaxy

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Photoluminescence properties of strained molecular‐beam epitaxy Si₁₋_xGe_x/Si multiquantum wells

J.‐P. Noël; N. L. Rowell; D. C. Houghton; A. Wang; D. D. Perovic

J. Vac. Sci. Technol. B 11, 899–901 (1993) https://doi.org/10.1116/1.586733

Abstract

View articletitled, Photoluminescence properties of strained molecular‐beam epitaxy Si1−xGex/Si multiquantum wells

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Molecular‐beam epitaxial growth of boron‐doped GaAs films

W. E. Hoke; P. J. Lemonias; D. G. Weir; H. T. Hendriks

J. Vac. Sci. Technol. B 11, 902–904 (1993) https://doi.org/10.1116/1.586734

Abstract

View articletitled, Molecular‐beam epitaxial growth of boron‐doped GaAs films

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Effects of As flux on Si δ‐doped GaAs

Y. C. Albert Shih; D. P. Neikirk; B. G. Streetman; C. W. Magee

J. Vac. Sci. Technol. B 11, 905–907 (1993) https://doi.org/10.1116/1.586735

Abstract

View articletitled, Effects of As flux on Si δ‐doped GaAs

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Cross‐sectional imaging of doped layers in epitaxial gallium arsenide films by scanning tunneling microscopy

T. Pinnington; S. N. Patitsas; C. Lavoie; A. Sanderson; T. Tiedje

J. Vac. Sci. Technol. B 11, 908–911 (1993) https://doi.org/10.1116/1.586736

Abstract

View articletitled, Cross‐sectional imaging of doped layers in epitaxial gallium arsenide films by scanning tunneling microscopy

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Amphoteric doping of Si in InAlAs/InGaAs/InP(311)A heterostructures grown by molecular‐beam epitaxy

X. Li; W. I. Wang; A. Y. Cho; D. L. Sivco

J. Vac. Sci. Technol. B 11, 912–914 (1993) https://doi.org/10.1116/1.586737

Abstract

View articletitled, Amphoteric doping of Si in InAlAs/InGaAs/InP(311)A heterostructures grown by molecular‐beam epitaxy

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Growth of high‐quality p‐type GaAs epitaxial layers using carbon tetrabromide by gas source molecular‐beam epitaxy and molecular‐beam epitaxy

Yu‐Min Houng; S. D. Lester; D. E. Mars; J. N. Miller

J. Vac. Sci. Technol. B 11, 915–918 (1993) https://doi.org/10.1116/1.586738

Abstract

View articletitled, Growth of high‐quality p‐type GaAs epitaxial layers using carbon tetrabromide by gas source molecular‐beam epitaxy and molecular‐beam epitaxy

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Growth and characterization of novel multilayer heterostructures for the monolithic integration of resonant‐cavity photodiodes and heterojunction bipolar transistors

A. Dodabalapur; T. Y. Chang; S. Chandrasekhar

J. Vac. Sci. Technol. B 11, 919–921 (1993) https://doi.org/10.1116/1.586739

Abstract

View articletitled, Growth and characterization of novel multilayer heterostructures for the monolithic integration of resonant‐cavity photodiodes and heterojunction bipolar transistors

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Electron intersubband normal incidence absorption in InGaAs/GaAs quantum wells*

H. S. Li; R. P. G. Karunasiri; Y. W. Chen; K. L. Wang

J. Vac. Sci. Technol. B 11, 922–925 (1993) https://doi.org/10.1116/1.586740

Abstract

View articletitled, Electron intersubband normal incidence absorption in InGaAs/GaAs quantum wells*

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Low growth temperature AlGaAs current blocking layers for use in surface normal optoelectronic devices

T. J. Rogers; C. Lei; B. G. Streetman; D. G. Deppe

J. Vac. Sci. Technol. B 11, 926–928 (1993) https://doi.org/10.1116/1.586741

Abstract

View articletitled, Low growth temperature AlGaAs current blocking layers for use in surface normal optoelectronic devices

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Optimization of molecular beam epitaxy grown pin multiple quantum well electroabsorption modulators for the 1.5‐μm wavelength region

T. Y. Chang; N. J. Sauer; Y. He

J. Vac. Sci. Technol. B 11, 929–931 (1993) https://doi.org/10.1116/1.586742

Abstract

View articletitled, Optimization of molecular beam epitaxy grown pin multiple quantum well electroabsorption modulators for the 1.5‐μm wavelength region

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Strain‐relaxed InGaAs buffer layers grown by molecular‐beam epitaxy for 1.3 μm Fabry–Pérot optical modulators

B. E. Hammons; I. J. Fritz; T. M. Brennan; A. J. Howard; J. A. Olsen

J. Vac. Sci. Technol. B 11, 932–934 (1993) https://doi.org/10.1116/1.586743

Abstract

View articletitled, Strain‐relaxed InGaAs buffer layers grown by molecular‐beam epitaxy for 1.3 μm Fabry–Pérot optical modulators

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Growth of AlGaAs and AlGaAs/GaAs heterostructures on misoriented (110)GaAs and a normal incidence type‐II AlAs/AlGaAs quantum well infrared photodetector

Pin Ho; Paul A. Martin; Larry S. Yu; Y. H. Wang; Sheng S. Li

J. Vac. Sci. Technol. B 11, 935–937 (1993) https://doi.org/10.1116/1.586744

Abstract

View articletitled, Growth of AlGaAs and AlGaAs/GaAs heterostructures on misoriented (110)GaAs and a normal incidence type‐II AlAs/AlGaAs quantum well infrared photodetector

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High‐speed λ=1.3 μm metal–semiconductor–metal photodetectors on GaAs

R. N. Sacks; R. W. Ade; D. E. Bossi; R. P. Basilica; D. W. Eichler

J. Vac. Sci. Technol. B 11, 938–940 (1993) https://doi.org/10.1116/1.586745

Abstract

View articletitled, High‐speed λ=1.3 μm metal–semiconductor–metal photodetectors on GaAs

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Quantum well GaAs/AlGaAs shallow‐donor far‐infrared photoconductors grown by molecular‐beam epitaxy

W. D. Goodhue; E. R. Mueller; D. M. Larsen; J. Waldman; Y. H. Chai; S. C. Lai; G. D. Johnson

J. Vac. Sci. Technol. B 11, 941–944 (1993) https://doi.org/10.1116/1.586746

Abstract

View articletitled, Quantum well GaAs/AlGaAs shallow‐donor far‐infrared photoconductors grown by molecular‐beam epitaxy

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Strained layer single quantum well double‐heterostructure optoelectronic switching laser

D. P. Docter; P. R. Claisse; G. W. Taylor

J. Vac. Sci. Technol. B 11, 945–947 (1993) https://doi.org/10.1116/1.586747

Abstract

View articletitled, Strained layer single quantum well double‐heterostructure optoelectronic switching laser

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Molecular‐beam epitaxy growth of semiconductor heterostructure optical converter lasers using the InGaAs/AlGaAs materials system

W. D. Goodhue; H. Q. Le; S. Di Cecca

J. Vac. Sci. Technol. B 11, 948–951 (1993) https://doi.org/10.1116/1.586748

Abstract

View articletitled, Molecular‐beam epitaxy growth of semiconductor heterostructure optical converter lasers using the InGaAs/AlGaAs materials system

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Characteristics of modulation‐doped quantum well lasers grown by molecular‐beam epitaxy

S. M. Shank; J. A. Varriano; M. W. Koch; G. W. Wicks

J. Vac. Sci. Technol. B 11, 952–954 (1993) https://doi.org/10.1116/1.586749

Abstract

View articletitled, Characteristics of modulation‐doped quantum well lasers grown by molecular‐beam epitaxy

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Blue/green light emitting diodes and laser diodes based on II–VI heterostructures grown on predeposited GaAs buffer layers

J. Ren; D. B. Eason; Y. Lansari; Z. Yu; K. A. Bowers; C. Boney; B. Sneed; J. W. Cook, Jr.; J. F. Schetzina; M. W. Koch; G. W. Wicks

J. Vac. Sci. Technol. B 11, 955–957 (1993) https://doi.org/10.1116/1.586750

Abstract

View articletitled, Blue/green light emitting diodes and laser diodes based on II–VI heterostructures grown on predeposited GaAs buffer layers

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Effect of Si δ doping and growth temperature on the I(V) characteristics of molecular‐beam epitaxially grown GaAs/(AlGa)As resonant tunneling devices

M. Henini; J. W. Sakai; P. H. Beton; L. Eaves; P. C. Main; G. Hill

J. Vac. Sci. Technol. B 11, 958–961 (1993) https://doi.org/10.1116/1.586751

Abstract

View articletitled, Effect of Si δ doping and growth temperature on the I(V) characteristics of molecular‐beam epitaxially grown GaAs/(AlGa)As resonant tunneling devices

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Molecular‐beam epitaxial growth and characterization of inverted, pulse‐doped AlGaAs/InGaAs/GaAs transistor structures

W. E. Hoke; P. S. Lyman; S. K. Brierley; H. T. Hendriks; N. Pan; J. R. Carter

J. Vac. Sci. Technol. B 11, 962–964 (1993) https://doi.org/10.1116/1.586899

Abstract

View articletitled, Molecular‐beam epitaxial growth and characterization of inverted, pulse‐doped AlGaAs/InGaAs/GaAs transistor structures

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Reproducible growth and application of AlAs/GaAs double barrier resonant tunneling diodes

D. E. Mars; L. Yang; M. R. T. Tan; S. J. Rosner

J. Vac. Sci. Technol. B 11, 965–968 (1993) https://doi.org/10.1116/1.586900

Abstract

View articletitled, Reproducible growth and application of AlAs/GaAs double barrier resonant tunneling diodes

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Comparison of pnp and npn InGaAlAs/InGaAs heterojunction bipolar transistors

A. Dodabalapur; T. Y. Chang

J. Vac. Sci. Technol. B 11, 969–971 (1993) https://doi.org/10.1116/1.586901

Abstract

View articletitled, Comparison of pnp and npn InGaAlAs/InGaAs heterojunction bipolar transistors

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High performance heterojunction bipolar transistors grown by molecular‐beam epitaxy using novel growth method

Albert Chin; Li‐Wu Yang; Paul A. Martin; Karen J. Nordheden; Jim M. Ballingall; T. H. Yu; P. C. Chao

J. Vac. Sci. Technol. B 11, 972–975 (1993) https://doi.org/10.1116/1.586902

Abstract

View articletitled, High performance heterojunction bipolar transistors grown by molecular‐beam epitaxy using novel growth method

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Cryogenic and high temperature operation of Al_0.52In_0.48P/In_0.2Ga_0.8As high electron mobility transistors

J. M. Kuo; Y. J. Chan

J. Vac. Sci. Technol. B 11, 976–978 (1993) https://doi.org/10.1116/1.586903

Abstract

View articletitled, Cryogenic and high temperature operation of Al0.52In0.48P/In0.2Ga0.8As high electron mobility transistors

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Molecular‐beam epitaxially grown InP/InGaAsP heterostructure for inversion‐channel devices

S. J. Kovacic; B. J. Robinson; J. H. Swoger; J. G. Simmons; D. A. Thompson

J. Vac. Sci. Technol. B 11, 979–981 (1993) https://doi.org/10.1116/1.586904

Abstract

View articletitled, Molecular‐beam epitaxially grown InP/InGaAsP heterostructure for inversion‐channel devices

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Transport properties of a two‐dimensional electron gas closely separated from an underlying n⁺ GaAs layer: The fabrication of independent ohmic contacts using molecular beam epitaxial regrowth and in situ focused ion beams

E. H. Linfield; A. R. Hamilton; N. Iredale; D. A. Ritchie; G. A. C. Jones

J. Vac. Sci. Technol. B 11, 982–984 (1993) https://doi.org/10.1116/1.586905

Abstract

View articletitled, Transport properties of a two‐dimensional electron gas closely separated from an underlying n+ GaAs layer: The fabrication of independent ohmic contacts using molecular beam epitaxial regrowth and in situ focused ion beams

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Application of an in situ hydrogen plasma to the epitaxial regrowth of InP grown by molecular beam epitaxy

P. G. Hofstra; D. A. Thompson; B. J. Robinson; R. W. Streater

J. Vac. Sci. Technol. B 11, 985–988 (1993) https://doi.org/10.1116/1.586906

Abstract

View articletitled, Application of an in situ hydrogen plasma to the epitaxial regrowth of InP grown by molecular beam epitaxy

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Dry etching of GaAs and AlGaAs by Cl₂ in molecular beam epitaxy system

H. G. Lee; R. J. Fischer; G. J. Zydzik; A. Y. Cho

J. Vac. Sci. Technol. B 11, 989–991 (1993) https://doi.org/10.1116/1.586907

Abstract

View articletitled, Dry etching of GaAs and AlGaAs by Cl2 in molecular beam epitaxy system

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Low temperature nitridation of silicon by direct ammonia nitridation in a molecular‐beam epitaxy reactor

T. K. Higman; R. T. Fayfield; M. S. Hagedorn; K. H. Lee; S. A. Campbell; J. N. Baillargeon; K. Y. Cheng

J. Vac. Sci. Technol. B 11, 992–993 (1993) https://doi.org/10.1116/1.586908

Abstract

View articletitled, Low temperature nitridation of silicon by direct ammonia nitridation in a molecular‐beam epitaxy reactor

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Variations in substrate temperature induced by molecular‐beam epitaxial growth on radiatively heated substrates

B. V. Shanabrook; J. R. Waterman; J. L. Davis; R. J. Wagner; D. S. Katzer

J. Vac. Sci. Technol. B 11, 994–997 (1993) https://doi.org/10.1116/1.586909

Abstract

View articletitled, Variations in substrate temperature induced by molecular‐beam epitaxial growth on radiatively heated substrates

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Wafer‐scale temperature mapping for molecular beam epitaxy and chemical beam epitaxy

C. J. Miner; B. Watt; W. T. Moore; A. Majeed; A. J. SpringThorpe

J. Vac. Sci. Technol. B 11, 998–1002 (1993) https://doi.org/10.1116/1.586910

Abstract

View articletitled, Wafer‐scale temperature mapping for molecular beam epitaxy and chemical beam epitaxy

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Comparison of optical pyrometry and infrared transmission measurements on indium‐free mounted substrates during molecular‐beam epitaxial growth

D. S. Katzer; B. V. Shanabrook

J. Vac. Sci. Technol. B 11, 1003–1006 (1993) https://doi.org/10.1116/1.586856

Abstract

View articletitled, Comparison of optical pyrometry and infrared transmission measurements on indium‐free mounted substrates during molecular‐beam epitaxial growth

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Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy

S. R. Johnson; C. Lavoie; T. Tiedje; J. A. Mackenzie

J. Vac. Sci. Technol. B 11, 1007–1010 (1993) https://doi.org/10.1116/1.586857

Abstract

View articletitled, Semiconductor substrate temperature measurement by diffuse reflectance spectroscopy in molecular beam epitaxy

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In situ laser light scattering for monitoring III–V semiconductor film growth by molecular‐beam epitaxy

K. Yang; E. Mirabelli; Z.‐C. Wu; L. J. Schowalter

J. Vac. Sci. Technol. B 11, 1011–1013 (1993) https://doi.org/10.1116/1.586858

Abstract

View articletitled, In situ laser light scattering for monitoring III–V semiconductor film growth by molecular‐beam epitaxy

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Laser light scattering detection of InGaAs strained layer relaxation during molecular‐beam epitaxial growth

F. G. Celii; Y. C. Kao; H.‐Y. Liu; L. A. Files‐Sesler; E. A. Beam, III

J. Vac. Sci. Technol. B 11, 1014–1017 (1993) https://doi.org/10.1116/1.586859

Abstract

View articletitled, Laser light scattering detection of InGaAs strained layer relaxation during molecular‐beam epitaxial growth

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Molecular‐beam epitaxy flux transient monitoring and correction using in situ reflection mass spectrometry

F. G. Celii; Y. C. Kao; E. A. Beam, III; W. M. Duncan; T. S. Moise

J. Vac. Sci. Technol. B 11, 1018–1022 (1993) https://doi.org/10.1116/1.586860

Abstract

View articletitled, Molecular‐beam epitaxy flux transient monitoring and correction using in situ reflection mass spectrometry

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Detection and reduction of indium segregation during molecular‐beam epitaxial growth of InGaAs/GaAs using in situ reflection mass spectrometry

Y. C. Kao; F. G. Celii; H. Y. Liu

J. Vac. Sci. Technol. B 11, 1023–1026 (1993) https://doi.org/10.1116/1.586861

Abstract

View articletitled, Detection and reduction of indium segregation during molecular‐beam epitaxial growth of InGaAs/GaAs using in situ reflection mass spectrometry

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Process control system for improved run‐to‐run control of molecular‐beam epitaxial growth of GaAs/Al_xGa_1−xAs heterostructures

A. Robertson, Jr.; J. Levkoff; A. Leiberich; V. Anyanwu; J. Moore; H. A. Lord

J. Vac. Sci. Technol. B 11, 1027–1031 (1993) https://doi.org/10.1116/1.586862

Abstract

View articletitled, Process control system for improved run‐to‐run control of molecular‐beam epitaxial growth of GaAs/AlxGa1−xAs heterostructures

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Reactions between molten aluminum and pyrolytic boron nitride crucibles

A. J. SpringThorpe; A. Majeed; S. J. Ingrey; G. M. Smith; I. C. Bassignana; D. Macquistan; J. T. Szymanski

J. Vac. Sci. Technol. B 11, 1032–1035 (1993) https://doi.org/10.1116/1.587002

Abstract

View articletitled, Reactions between molten aluminum and pyrolytic boron nitride crucibles

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Interface contamination by suboxide transport

Colin E. C. Wood; Richard A. Wilson

J. Vac. Sci. Technol. B 11, 1036–1040 (1993) https://doi.org/10.1116/1.587003

Abstract

View articletitled, Interface contamination by suboxide transport

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Equilibrium gas‐phase composition of cracked AsH₃ and PH₃

A. Robertson, Jr.; A. S. Jordan

J. Vac. Sci. Technol. B 11, 1041–1044 (1993) https://doi.org/10.1116/1.587004

Abstract

View articletitled, Equilibrium gas‐phase composition of cracked AsH3 and PH3

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Generation of fast‐switching As₂ and P₂ beams from AsH₃ and PH₃ for gas‐source molecular‐beam epitaxial growth of InGaAs/InP multiple quantum well and superlattice structures

S. L. Jackson; J. N. Baillargeon; A. P. Curtis; X. Liu; J. E. Baker; J. I. Malin; K. C. Hsieh; S. G. Bishop; K. Y. Cheng; G. E. Stillman

J. Vac. Sci. Technol. B 11, 1045–1049 (1993) https://doi.org/10.1116/1.587005

Abstract

View articletitled, Generation of fast‐switching As2 and P2 beams from AsH3 and PH3 for gas‐source molecular‐beam epitaxial growth of InGaAs/InP multiple quantum well and superlattice structures

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Real‐time flux monitoring and feedback control of a valved arsenic source

T. J. Mattord; K. Sadra; A. Srinivasan; A. Tang; T. R. Block; Y. C. Albert Shih; D. P. Neikirk; B. G. Streetman

J. Vac. Sci. Technol. B 11, 1050–1052 (1993) https://doi.org/10.1116/1.587006

Abstract

View articletitled, Real‐time flux monitoring and feedback control of a valved arsenic source

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Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layers

Werner Wegscheider; Hans Cerva

J. Vac. Sci. Technol. B 11, 1056–1063 (1993) https://doi.org/10.1116/1.587007

Abstract

View articletitled, Effect of compressive and tensile strain on misfit dislocation injection in SiGe epitaxial layers

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Stability of strained Si_1−yC_y random alloy layers

A. R. Powell; K. Eberl; F. E. LeGoues; B. A. Ek; S. S. Iyer

J. Vac. Sci. Technol. B 11, 1064–1068 (1993) https://doi.org/10.1116/1.587008

Abstract

View articletitled, Stability of strained Si1−yCy random alloy layers

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Raman scattering of α‐Sn/Ge superlattices on Ge (001)

R. Schorer; W. Wegscheider; G. Abstreiter

J. Vac. Sci. Technol. B 11, 1069–1072 (1993) https://doi.org/10.1116/1.587009

Abstract

View articletitled, Raman scattering of α‐Sn/Ge superlattices on Ge (001)

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Surface studies during growth of Si_1−xGe_x/Si from gaseous Si and Ge hydrides

S. M. Mokler; N. Ohtani; M. H. Xie; J. Zhang; B. A. Joyce

J. Vac. Sci. Technol. B 11, 1073–1076 (1993) https://doi.org/10.1116/1.587010

Abstract

View articletitled, Surface studies during growth of Si1−xGex/Si from gaseous Si and Ge hydrides

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Low‐temperature cleaning processes for Si molecular beam epitaxy

P. E. Thompson; M. E. Twigg; D. J. Godbey; K. D. Hobart; D. S. Simons

J. Vac. Sci. Technol. B 11, 1077–1082 (1993) https://doi.org/10.1116/1.587011

Abstract

View articletitled, Low‐temperature cleaning processes for Si molecular beam epitaxy

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Very narrow SiGe/Si quantum wells deposited by low‐temperature atmospheric pressure chemical vapor deposition

D. A. Grützmacher; T. O. Sedgwick; G. A. Northrop; A. Zaslavsky; A. R. Powell; V. P. Kesan

J. Vac. Sci. Technol. B 11, 1083–1088 (1993) https://doi.org/10.1116/1.587012

Abstract

View articletitled, Very narrow SiGe/Si quantum wells deposited by low‐temperature atmospheric pressure chemical vapor deposition

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Photoluminescence study of Si_1−xGe_x/Si heterostructures grown by molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition

Koichi Terashima; Michio Tajima; Toru Tatsumi

J. Vac. Sci. Technol. B 11, 1089–1096 (1993) https://doi.org/10.1116/1.587013

Abstract

View articletitled, Photoluminescence study of Si1−xGex/Si heterostructures grown by molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition

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Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy

J. Brunner; J. Nützel; M. Gail; U. Menczigar; G. Abstreiter

J. Vac. Sci. Technol. B 11, 1097–1100 (1993) https://doi.org/10.1116/1.586819

Abstract

View articletitled, Luminescence studies of confined excitons in pseudomorphic Si/SiGe quantum wells grown by solid source molecular beam epitaxy

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On free‐exciton behavior in molecular‐beam epitaxially grown Si_1−xGe_x quantum wells

N. L. Rowell; J.‐P. Noël; D. C. Houghton; A. Wang; D. D. Perovic

J. Vac. Sci. Technol. B 11, 1101–1105 (1993) https://doi.org/10.1116/1.586820

Abstract

View articletitled, On free‐exciton behavior in molecular‐beam epitaxially grown Si1−xGex quantum wells

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Characterization of undoped multiple quantum well structures

R. Misra; R. Strong; D. W. Greve; T. E. Schlesinger

J. Vac. Sci. Technol. B 11, 1106–1109 (1993) https://doi.org/10.1116/1.586821

Abstract

View articletitled, Characterization of undoped multiple quantum well structures

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Electro‐ and photoluminescence studies from ultrathin Si_mGe_n superlattices

H. Presting; U. Menczigar; H. Kibbel

J. Vac. Sci. Technol. B 11, 1110–1114 (1993) https://doi.org/10.1116/1.586822

Abstract

View articletitled, Electro‐ and photoluminescence studies from ultrathin SimGen superlattices

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Sb surface segregation during heavy doping of Si(100) grown at low temperature by molecular beam epitaxy

K. D. Hobart; D. J. Godbey; P. E. Thompson; D. S. Simons

J. Vac. Sci. Technol. B 11, 1115–1119 (1993) https://doi.org/10.1116/1.586823

Abstract

View articletitled, Sb surface segregation during heavy doping of Si(100) grown at low temperature by molecular beam epitaxy

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Ge segregation during the growth of a SiGe buried layer by molecular beam epitaxy

D. J. Godbey; M. G. Ancona

J. Vac. Sci. Technol. B 11, 1120–1123 (1993) https://doi.org/10.1116/1.586824

Abstract

View articletitled, Ge segregation during the growth of a SiGe buried layer by molecular beam epitaxy

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Selective SiGe and heavily As doped Si deposited at low temperature by atmospheric pressure chemical vapor deposition

T. O. Sedgwick; D. A. Grützmacher; A. Zaslavsky; V. P. Kesan

J. Vac. Sci. Technol. B 11, 1124–1128 (1993) https://doi.org/10.1116/1.586825

Abstract

View articletitled, Selective SiGe and heavily As doped Si deposited at low temperature by atmospheric pressure chemical vapor deposition

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Effects of doping on growth in the dichlorosilane/germane system

S. A. Campbell; W. H. Liu; J. D. Leighton

J. Vac. Sci. Technol. B 11, 1129–1133 (1993) https://doi.org/10.1116/1.586826

Abstract

View articletitled, Effects of doping on growth in the dichlorosilane/germane system

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Epitaxy and doping of Si and Si₁₋_xGe_x at low temperature by rapid thermal chemical vapor deposition

D. Dutartre; P. Warren; I. Sagnes; P. A. Badoz; A. Perio; J. C. Dupuis; G. Prudon

J. Vac. Sci. Technol. B 11, 1134–1139 (1993) https://doi.org/10.1116/1.586827

Abstract

View articletitled, Epitaxy and doping of Si and Si1−xGex at low temperature by rapid thermal chemical vapor deposition

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Angle‐resolved magneto‐tunneling spectroscopy to probe valence band anisotropy in Si/Si_1−xGe_x quantum wells

V. P. Kesan; U. Gennser; D. A. Syphers; T. P. Smith, III; S. S. Iyer

J. Vac. Sci. Technol. B 11, 1140–1144 (1993) https://doi.org/10.1116/1.586828

Abstract

View articletitled, Angle‐resolved magneto‐tunneling spectroscopy to probe valence band anisotropy in Si/Si1−xGex quantum wells

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Evidence of phonon‐absorption‐assisted electron resonant tunneling in Si/Si_1−xGe_x diodes

Ž. Matutinović‐Krstelj; C. W. Liu; X. Xiao; J. C. Sturm

J. Vac. Sci. Technol. B 11, 1145–1148 (1993) https://doi.org/10.1116/1.586829

Abstract

View articletitled, Evidence of phonon‐absorption‐assisted electron resonant tunneling in Si/Si1−xGex diodes

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Scanning tunneling microscopy and spectroscopy of Si‐based heterostructures

E. T. Yu; M. B. Johnson; A. R. Powell; J.‐M. Halbout; S. S. Iyer

J. Vac. Sci. Technol. B 11, 1149–1153 (1993) https://doi.org/10.1116/1.586830

Abstract

View articletitled, Scanning tunneling microscopy and spectroscopy of Si‐based heterostructures

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Optically detected magnetic resonance of sharp luminescence from Si/Si_1−xGe_x superlattices

T. A. Kennedy; E. R. Glaser; D. J. Godbey; P. E. Thompson; C. H. Chern; K. L. Wang; X. Xiao; J. C. Sturm

J. Vac. Sci. Technol. B 11, 1154–1158 (1993) https://doi.org/10.1116/1.586831

Abstract

View articletitled, Optically detected magnetic resonance of sharp luminescence from Si/Si1−xGex superlattices

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SiGe/Si electronics and optoelectronics

Kang L. Wang; R. P. G. Karunasiri

J. Vac. Sci. Technol. B 11, 1159–1167 (1993) https://doi.org/10.1116/1.586832

Abstract

View articletitled, SiGe/Si electronics and optoelectronics

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Modeling of parasitic barrier effects in silicide/Si_1−xGe_x Schottky‐barrier infrared detectors fabricated with a silicon sacrificial layer

X. Xiao; J. C. Sturm; S. R. Parihar; S. A. Lyon; D. Meyerhofer; S. Palfrey; F. V. Shallcross

J. Vac. Sci. Technol. B 11, 1168–1171 (1993) https://doi.org/10.1116/1.586833

Abstract

View articletitled, Modeling of parasitic barrier effects in silicide/Si1−xGex Schottky‐barrier infrared detectors fabricated with a silicon sacrificial layer

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Fabrication of a lateral p‐i‐n photodiode in a Si/(Si_0.8Ge_0.2/Si) superlattice/Si/sapphire structure

H. Hanafusa; E. Taguchi; T. Dan; K. Yoneda

J. Vac. Sci. Technol. B 11, 1172–1175 (1993) https://doi.org/10.1116/1.586834

Abstract

View articletitled, Fabrication of a lateral p‐i‐n photodiode in a Si/(Si0.8Ge0.2/Si) superlattice/Si/sapphire structure

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High mobility electron gases and modulation‐doped field effect transistors fabricated in Si/Si_1−xGe_x by rapid thermal chemical vapor deposition

V. Venkataraman; C. W. Liu; J. C. Sturm

J. Vac. Sci. Technol. B 11, 1176–1178 (1993) https://doi.org/10.1116/1.586835

Abstract

View articletitled, High mobility electron gases and modulation‐doped field effect transistors fabricated in Si/Si1−xGex by rapid thermal chemical vapor deposition

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Modeling and characteristics of bistable optoelectronic switches and heterojunction field effect transistors in molecular‐beam epitaxially grown SiGe/Si

S. J. Kovacic; J. G. Simmons; J. J. Ojha; J.‐P. Noel; D. C. Houghton

J. Vac. Sci. Technol. B 11, 1179–1185 (1993) https://doi.org/10.1116/1.586836

Abstract

View articletitled, Modeling and characteristics of bistable optoelectronic switches and heterojunction field effect transistors in molecular‐beam epitaxially grown SiGe/Si

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High‐performance Si/SiGe heterojunction bipolar transistors grown by molecular‐beam epitaxy

A. Gruhle

J. Vac. Sci. Technol. B 11, 1186–1189 (1993) https://doi.org/10.1116/1.586837

Abstract

View articletitled, High‐performance Si/SiGe heterojunction bipolar transistors grown by molecular‐beam epitaxy

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Effect of heavy doping on band gap in SiGe base regions

B. M. Manning; C. J. Peters; N. G. Tarr; J.‐P. Noel; D. C. Houghton

J. Vac. Sci. Technol. B 11, 1190–1192 (1993) https://doi.org/10.1116/1.586838

Abstract

View articletitled, Effect of heavy doping on band gap in SiGe base regions

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Electrical characteristics of double‐base Si/Si_1−xGe_x/Si heterojunction bipolar transistors

Erwin J. Prinz; Xiaodong Xiao; Peter V. Schwartz; James C. Sturm

J. Vac. Sci. Technol. B 11, 1193–1198 (1993) https://doi.org/10.1116/1.586839

Abstract

View articletitled, Electrical characteristics of double‐base Si/Si1−xGex/Si heterojunction bipolar transistors

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