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Volume 10, Issue 4
July 1992
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena Cover Image for Volume 10, Issue 4
All Issues
ISSN 1071-1023
EISSN 1520-8567
GaN, AlN, and InN: A review
S. Strite; H. Morkoç
J. Vac. Sci. Technol. B 10, 1237–1266 (1992) https://doi.org/10.1116/1.585897
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In situ characterization of InP surfaces after low‐energy hydrogen ion cleaning
D. Gallet; G. Hollinger; C. Santinelli; L. Goldstein
J. Vac. Sci. Technol. B 10, 1267–1272 (1992) https://doi.org/10.1116/1.585898
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FeGe liquid metal ion source for maskless isolation implants in InP
C. H. Chu; D. L. Barr; L. R. Harriott; H. H. Wade
J. Vac. Sci. Technol. B 10, 1273–1276 (1992) https://doi.org/10.1116/1.585899
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Closed‐ampoule diffusion of sulfur into Cd‐doped InP substrates: Dependence of S profiles on diffusion temperature and time
Mircea Faur; Maria Faur; Frank Honecy; Chandra Goradia; Manju Goradia; Douglas Jayne; Ralph Clark
J. Vac. Sci. Technol. B 10, 1277–1284 (1992) https://doi.org/10.1116/1.585900
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Mesa surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors with an emitter–base–emitter structure
William Liu; James S. Harris, Jr.
J. Vac. Sci. Technol. B 10, 1285–1290 (1992) https://doi.org/10.1116/1.585857
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Analysis of passivating oxide and surface contaminants on GaAs (100) by temperature‐dependent and angle resolved x‐ray photoelectron spectroscopy, and time‐of‐flight secondary ion mass spectrometry
F. Schröder; W. Storm; M. Altebockwinkel; L. Wiedmann; A. Benninghoven
J. Vac. Sci. Technol. B 10, 1291–1296 (1992) https://doi.org/10.1116/1.585858
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Effect of cleanings on the composition of HgCdTe surfaces
M. Seelmann‐Eggebert; G. Carey; V. Krishnamurthy; C. R. Helms
J. Vac. Sci. Technol. B 10, 1297–1311 (1992) https://doi.org/10.1116/1.585859
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Etching of polysilicon in a high‐density electron cyclotron resonance plasma with collimated magnetic field
D. Dane; P. Gadgil; T. D. Mantei; M. A. Carlson; M. E. Weber
J. Vac. Sci. Technol. B 10, 1312–1319 (1992) https://doi.org/10.1116/1.585860
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Study of gate oxide damage in an electron cyclotron resonance argon plasma
S. B. Felch; S. Salimian; D. T. Hodul
J. Vac. Sci. Technol. B 10, 1320–1322 (1992) https://doi.org/10.1116/1.585861
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Photoemission study of oxygen adsorption on ternary silicides
E. Horache; J. E. Fischer; M. W. Ruckman
J. Vac. Sci. Technol. B 10, 1323–1328 (1992) https://doi.org/10.1116/1.585862
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Use of scanning tunneling microscopy and transmission electron microscopy to quantify and characterize CoSi2 roughness
R. C. Chapman; P. Smith; R. P. Adu; G. E. McGuire; C. Canovai; C. Osburn
J. Vac. Sci. Technol. B 10, 1329–1334 (1992) https://doi.org/10.1116/1.585863
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Differences in final state effects for adsorbates on metal and semiconductor surfaces
K. Karlsson; J. Kanski; O. Nyqvist
J. Vac. Sci. Technol. B 10, 1335–1336 (1992) https://doi.org/10.1116/1.585864
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Remote plasma chemical vapor deposition of copper for applications in microelectronics
Hongwen Li; Eric T. Eisenbraun; Alain E. Kaloyeros
J. Vac. Sci. Technol. B 10, 1337–1340 (1992) https://doi.org/10.1116/1.585865
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Comment on ‘‘Effect of many‐body corrections on intersubband transitions in GaAs/AlxGa1−xAs multiple quantum wells’’ [J. Vac. Sci. Technol. B 9, 2473 (1991)]
Frank Szmulowicz; M. O. Manasreh
J. Vac. Sci. Technol. B 10, 1341–1342 (1992) https://doi.org/10.1116/1.585866
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Erratum: ‘‘Performance tradeoffs in AlInAs/GaInAs single‐ and double‐heterojunction NpN heterojunction bipolar transistors’’ [J. Vac. Sci. Technol. B 10, 1023 (1992)]
C. W. Farley; J. A. Higgins; W.‐J. Ho; B. T. McDermott; M. F. Chang
J. Vac. Sci. Technol. B 10, 1343 (1992) https://doi.org/10.1116/1.585867
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Mercury cadmium telluride material requirements for infrared systems
Raymond Balcerak; Lynette Brown
J. Vac. Sci. Technol. B 10, 1353–1358 (1992) https://doi.org/10.1116/1.585868
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Key issues in HgCdTe‐based focal plane arrays: An industry perspective
William E. Tennant; C. A. Cockrum; J. B. Gilpin; M. A. Kinch; M. B. Reine; R. P. Ruth
J. Vac. Sci. Technol. B 10, 1359–1369 (1992) https://doi.org/10.1116/1.585869
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Growth of (111) CdTe on GaAs/Si and Si substrates for HgCdTe epitaxy
R. Korenstein; P. Madison; P. Hallock
J. Vac. Sci. Technol. B 10, 1370–1375 (1992) https://doi.org/10.1116/1.585870
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Low temperature epitaxy of HgTe, CdTe, and HgCdTe using flow modulation techniques
I. B. Bhat; H. Ehsani; W. S. Wang; S. K. Ghandhi; N. H. Karam
J. Vac. Sci. Technol. B 10, 1376–1379 (1992) https://doi.org/10.1116/1.585871
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Growth of uniform HgCdTe by metalorganic chemical vapor deposition system
S. Murakami; Y. Sakachi; H. Nishino; T. Saito; K. Shinohara; H. Takigawa
J. Vac. Sci. Technol. B 10, 1380–1383 (1992) https://doi.org/10.1116/1.585872
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Photoassisted organometallic vapor‐phase epitaxy of CdTe
B. Liu; R. F. Hicks; J. J. Zinck; J. E. Jensen; G. L. Olson
J. Vac. Sci. Technol. B 10, 1384–1391 (1992) https://doi.org/10.1116/1.585873
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Study of microinhomogeneities in midwave infrared mercury cadmium telluride grown by metalorganic chemical vapor deposition‐interdiffused multilayer process onto GaAs and GaAs/Si substrates
S. J. C. Irvine; D. D. Edwall; L. O. Bubulac; R. V. Gil; E. R. Gertner
J. Vac. Sci. Technol. B 10, 1392–1398 (1992) https://doi.org/10.1116/1.585874
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Study of CdTe epitaxial growth on (211)B GaAs by molecular‐beam epitaxy
T. Sasaki; M. Tomono; N. Oda
J. Vac. Sci. Technol. B 10, 1399–1404 (1992) https://doi.org/10.1116/1.585875
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Current status of direct growth of CdTe and HgCdTe on silicon by molecular‐beam epitaxy
R. Sporken; Y. P. Chen; S. Sivananthan; M. D. Lange; J. P. Faurie
J. Vac. Sci. Technol. B 10, 1405–1409 (1992) https://doi.org/10.1116/1.585876
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Real time control of the molecular‐beam epitaxial growth of CdHgTe and CdTe/HgTe superlattices using ellipsometry
R. H. Hartley; M. A. Folkard; D. Carr; P. J. Orders; D. Rees; I. K. Varga; V. Kumar; G. Shen; T. A. Steele; H. Buskes; J. B. Lee
J. Vac. Sci. Technol. B 10, 1410–1414 (1992) https://doi.org/10.1116/1.585877
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Selected‐area epitaxy of CdTe
J. David Benson; N. K. Dhar; M. Martinka; P. R. Boyd; J. H. Dinan; R. B. Benz; B. K. Wagner; C. J. Summers
J. Vac. Sci. Technol. B 10, 1415–1417 (1992) https://doi.org/10.1116/1.585878
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Properties of CdZnTe crystals grown by a high pressure Bridgman method
F. P. Doty; J. F. Butler; J. F. Schetzina; K. A. Bowers
J. Vac. Sci. Technol. B 10, 1418–1422 (1992) https://doi.org/10.1116/1.586264
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p‐type doping of metalorganic chemical vapor deposition‐grown HgCdTe by arsenic and antimony
D. D. Edwall; L. O. Bubulac; E. R. Gertner
J. Vac. Sci. Technol. B 10, 1423–1427 (1992) https://doi.org/10.1116/1.586265
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Orientation dependance of arsenic incorporation in metalorganic chemical‐vapor deposition‐grown HgCdTe
J. Elliott; V. G. Kreismanis
J. Vac. Sci. Technol. B 10, 1428–1431 (1992) https://doi.org/10.1116/1.586266
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Gas source iodine doping and characterization of molecular‐beam epitaxially grown CdTe
D. Rajavel; B. K. Wagner; R. G. Benz, II; A. Conte; K. Maruyama; C. J. Summers; J. D. Benson
J. Vac. Sci. Technol. B 10, 1432–1437 (1992) https://doi.org/10.1116/1.586267
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Dopant diffusion in HgCdTe grown by photon assisted molecular‐beam epitaxy
T. H. Myers; K. A. Harris; R. W. Yanka; L. M. Mohnkern; R. J. Williams; G. K. Dudoff
J. Vac. Sci. Technol. B 10, 1438–1443 (1992) https://doi.org/10.1116/1.586268
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Point defects and defect–impurity interaction in CdxHg1−xTe and other II–VI semiconductors: Facts and conjectures
Y. Marfaing
J. Vac. Sci. Technol. B 10, 1444–1450 (1992) https://doi.org/10.1116/1.586269
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Critical stress of Hg1−xCdxTe solid solutions
Sylvester N. Ekpenuma; Charles W. Myles
J. Vac. Sci. Technol. B 10, 1451–1453 (1992) https://doi.org/10.1116/1.586270
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Microhardness of Hg‐containing II–VI alloys
Charles W. Myles; Sylvester N. Ekpenuma
J. Vac. Sci. Technol. B 10, 1454–1459 (1992) https://doi.org/10.1116/1.586271
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Ion mill damage in n‐HgCdTe
J. L. Elkind
J. Vac. Sci. Technol. B 10, 1460–1465 (1992) https://doi.org/10.1116/1.586272
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Investigation of mercury interstitials in Hg1−xCdxTe alloys using resonant impact‐ionization spectroscopy
C. L. Littler; E. Maldonado; X. N. Song; Z. Yu; J. L. Elkind; D. G. Seiler; J. R. Lowney
J. Vac. Sci. Technol. B 10, 1466–1470 (1992) https://doi.org/10.1116/1.586273
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Defect equilibrium in HgTe
M. A. Berding; M. van Schilfgaarde; A. Sher
J. Vac. Sci. Technol. B 10, 1471–1475 (1992) https://doi.org/10.1116/1.586274
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Recipe to minimize Te precipitation in CdTe and (Cd,Zn)Te crystals
H. R. Vydyanath; J. Ellsworth; J. J. Kennedy; B. Dean; C. J. Johnson; G. T. Neugebauer; J. Sepich; Pok‐Kai Liao
J. Vac. Sci. Technol. B 10, 1476–1484 (1992) https://doi.org/10.1116/1.586275
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Effects of mixed‐valence mercury and indium on the electrical properties of Hg1−xCdxTe
G. N. Pain
J. Vac. Sci. Technol. B 10, 1485–1491 (1992) https://doi.org/10.1116/1.586276
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Dislocation reduction in HgCdTe on GaAs and Si
S. H. Shin; J. M. Arias; D. D. Edwall; M. Zandian; J. G. Pasko; R. E. DeWames
J. Vac. Sci. Technol. B 10, 1492–1498 (1992) https://doi.org/10.1116/1.586277
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Effect of dislocations on the electrical and optical properties of long‐wavelength infrared HgCdTe photovoltaic detectors
S. M. Johnson; D. R. Rhiger; J. P. Rosbeck; J. M. Peterson; S. M. Taylor; M. E. Boyd
J. Vac. Sci. Technol. B 10, 1499–1506 (1992) https://doi.org/10.1116/1.586278
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Investigation of the generation–recombination currents in HgCdTe midwavelength infrared photodiodes
Richard Schoolar; Stephen Price; Joseph Rosbeck
J. Vac. Sci. Technol. B 10, 1507–1514 (1992) https://doi.org/10.1116/1.586279
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Photoemission spectroscopic techniques to assess physical and chemical properties of mercury cadmium telluride
M. Seelmann‐Eggebert
J. Vac. Sci. Technol. B 10, 1515–1524 (1992) https://doi.org/10.1116/1.586280
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Thermodynamic description of metal Hg(Cd)Te systems
C. R. Helms; Vikram Krishnamurthy
J. Vac. Sci. Technol. B 10, 1525–1529 (1992) https://doi.org/10.1116/1.586281
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Metal–semiconductor work function differences with HgCdTe and their effect on radiation‐induced flatband voltage shifts
Roger L. Strong
J. Vac. Sci. Technol. B 10, 1530–1533 (1992) https://doi.org/10.1116/1.586243
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HgTe contacts to p‐HgCdTe
Arthur M. Turner
J. Vac. Sci. Technol. B 10, 1534–1537 (1992) https://doi.org/10.1116/1.586244
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In situ studies of the effect of various gaseous species and ultraviolet illumination on the dark currents of HgMnCdTe and HgCdTe short‐wavelength infrared diodes
J. T. Cheung; S. H. Shin; J. G. Pasko; R. E. DeWames
J. Vac. Sci. Technol. B 10, 1538–1542 (1992) https://doi.org/10.1116/1.586245
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Electron microscope investigation of surface features of {100} Cd1−yZnyTe grown by metalorganic chemical vapor deposition
W. J. Hamilton; S. M. Johnson; W. L. Ahlgren
J. Vac. Sci. Technol. B 10, 1543–1548 (1992) https://doi.org/10.1116/1.586246
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Ordered phase in (Hg,Cd)Te grown by liquid‐phase epitaxy on CdTe (111)B substrate
K. T. Chang; E. Goo
J. Vac. Sci. Technol. B 10, 1549–1552 (1992) https://doi.org/10.1116/1.586247
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High‐spatial‐resolution resistivity mapping applied to mercury cadmium telluride
Joseph J. Kopanski; Jeremiah R. Lowney; Donald B. Novotny; David G. Seiler; Art Simmons; John Ramsey
J. Vac. Sci. Technol. B 10, 1553–1559 (1992) https://doi.org/10.1116/1.586248
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Analysis of excess carrier lifetime in p‐type HgCdTe using a three‐level Shockley–Read model
Y. L. Tyan; T. R. Schimert; Lewis T. Claiborne
J. Vac. Sci. Technol. B 10, 1560–1568 (1992) https://doi.org/10.1116/1.586249
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Influence of resonant defect states on subband structures in Hg1−xCdxTe
J. H. Chu; Z. Y. Mi; R. Sizmann; F. Koch; R. Wollrab; J. Ziegler; H. Maier
J. Vac. Sci. Technol. B 10, 1569–1573 (1992) https://doi.org/10.1116/1.586250
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Properties of (211)B HgTe–CdTe superlattices grown by photon assisted molecular‐beam epitaxy
K. A. Harris; R. W. Yanka; L. M. Mohnkern; A. R. Reisinger; T. H. Myers; Z. Yang; Z. Yu; S. Hwang; J. F. Schetzina
J. Vac. Sci. Technol. B 10, 1574–1581 (1992) https://doi.org/10.1116/1.586251
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Magnetic generation of electrons and holes in semimetallic HgTe–CdTe superlattices
J. R. Meyer; C. A. Hoffman; F. J. Bartoli; T. Wojtowicz; M. Dobrowolska; J. K. Furdyna; X. Chu; J. P. Faurie; L. R. Ram‐Mohan
J. Vac. Sci. Technol. B 10, 1582–1586 (1992) https://doi.org/10.1116/1.586252
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HgCdTe double heterostructure diode lasers grown by molecular‐beam epitaxy
R. Zucca; M. Zandian; J. M. Arias; R. V. Gil
J. Vac. Sci. Technol. B 10, 1587–1593 (1992) https://doi.org/10.1116/1.586253
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Nonlinear optical effects in rotationally twinned CdTe and CdMnTe crystals
P. Becla; A. F. Witt; C. F. Dewey, Jr.
J. Vac. Sci. Technol. B 10, 1594–1598 (1992) https://doi.org/10.1116/1.586254
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Long wavelength HgMnTe avalanche photodiodes
P. Becla; S. Motakef; T. Koehler
J. Vac. Sci. Technol. B 10, 1599–1601 (1992) https://doi.org/10.1116/1.586255
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Tunneling and 1/f noise currents in HgCdTe photodiodes
Y. Nemirovsky; A. Unikovsky
J. Vac. Sci. Technol. B 10, 1602–1610 (1992) https://doi.org/10.1116/1.586256
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Covered electrode HgCdTe photoconductor under high illumination levels
A. Fenigstein; S. E. Schacham; E. Finkman
J. Vac. Sci. Technol. B 10, 1611–1616 (1992) https://doi.org/10.1116/1.586257
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Noise (1/f) and dark currents in midwavelength infrared PACE‐I HgCdTe photodiodes
J. Bajaj; E. R. Blazejewski; G. M. Williams; R. E. DeWames; M. Brown
J. Vac. Sci. Technol. B 10, 1617–1625 (1992) https://doi.org/10.1116/1.586258
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Bias‐switchable dual‐band HgCdTe infrared photodetector
E. R. Blazejewski; J. M. Arias; G. M. Williams; W. McLevige; M. Zandian; J. Pasko
J. Vac. Sci. Technol. B 10, 1626–1632 (1992) https://doi.org/10.1116/1.586259
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Compositional analysis of HgCdTe epitaxial layers using secondary ion mass spectrometry
L. O. Bubulac; D. D. Edwall; J. T. Cheung; C. R. Viswanathan
J. Vac. Sci. Technol. B 10, 1633–1637 (1992) https://doi.org/10.1116/1.586260
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Quantum Hall effect and setback modulation doping in HgTe–CdTe heterostructures
C. A. Hoffman; J. R. Meyer; F. J. Bartoli; Y. Lansari; J. W. Cook, Jr.; J. F. Schetzina
J. Vac. Sci. Technol. B 10, 1638–1642 (1992) https://doi.org/10.1116/1.586261
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Reduced metal–insulator semiconductor tunneling in metalorganic chemical vapor deposition HgCdTe(111)Te films
R. Koestner; V. Lopes; R. Korenstein; S. Oguz; V. Kreismanis; H. Ehsani; I. Bhat
J. Vac. Sci. Technol. B 10, 1643–1650 (1992) https://doi.org/10.1116/1.586262
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Formation and electrical effects of process induced dislocations in HgCdTe
R. S. List
J. Vac. Sci. Technol. B 10, 1651–1657 (1992) https://doi.org/10.1116/1.586263
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TiNxOy transparent electrode material for HgCdTe infrared devices
C. F. Wan; F. C. Sulzbach; J. D. Luttmer
J. Vac. Sci. Technol. B 10, 1658–1662 (1992) https://doi.org/10.1116/1.586283
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Coherent epitaxy, surface effects, and semiconductor alloy phase diagrams
David M. Wood
J. Vac. Sci. Technol. B 10, 1675–1682 (1992) https://doi.org/10.1116/1.586222
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Thermodynamics of surface‐induced ordering in the Ga1−xInxP alloy
Roberto Osório; James E. Bernard; Sverre Froyen; Alex Zunger
J. Vac. Sci. Technol. B 10, 1683–1688 (1992) https://doi.org/10.1116/1.586223
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Surface reconstruction, steps, and ordering in semiconductor alloys grown from vapor phase
S. B. Ogale; A. Madhukar; S. Y. Joshi; R. Viswanathan
J. Vac. Sci. Technol. B 10, 1689–1694 (1992) https://doi.org/10.1116/1.586224
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Molecular‐beam epitaxial growth as a self‐organized critical phenomenon
S. Das Sarma
J. Vac. Sci. Technol. B 10, 1695–1703 (1992) https://doi.org/10.1116/1.586225
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Si(111)/FeSi2 heterostructures: Formation and properties of the low temperature metallic (γ) and semiconducting (β) disilicide phases
H. Moritz; B. Rösen; S. Popović; A. Rizzi; H. Lüth
J. Vac. Sci. Technol. B 10, 1704–1709 (1992) https://doi.org/10.1116/1.586226
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Analysis of molecular‐beam epitaxial growth of InAs on GaAs(100) by reflection anisotropy spectroscopy
S. M. Scholz; A. B. Müller; W. Richter; D. R. T. Zahn; D. I. Westwood; D. A. Woolf; R. H. Williams
J. Vac. Sci. Technol. B 10, 1710–1715 (1992) https://doi.org/10.1116/1.586227
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Dimer formation on (001) GaAs under organometallic chemical vapor deposition growth conditions
Itaru Kamiya; D. E. Aspnes; H. Tanaka; L. T. Florez; J. P. Harbison; R. Bhat
J. Vac. Sci. Technol. B 10, 1716–1719 (1992) https://doi.org/10.1116/1.586228
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Stoichiometry‐ and bond‐structure‐dependent decomposition of trimethylgallium on As‐rich GaAs(100) surfaces
Masahiro Sasaki; Seikoh Yoshida
J. Vac. Sci. Technol. B 10, 1720–1724 (1992) https://doi.org/10.1116/1.586229
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Atomic layer epitaxy on (001) GaAs: Real‐time spectroscopy
D. E. Aspnes; I. Kamiya; H. Tanaka; R. Bhat
J. Vac. Sci. Technol. B 10, 1725–1729 (1992) https://doi.org/10.1116/1.586230
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Study of strained epitaxial layers by Raman techniques
O. Brafman
J. Vac. Sci. Technol. B 10, 1730–1734 (1992) https://doi.org/10.1116/1.586231
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Growth of AlN on GaAs(110) by reactive molecular beam deposition
H.‐U. Baier; W. Mönch
J. Vac. Sci. Technol. B 10, 1735–1739 (1992) https://doi.org/10.1116/1.586232
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Can nuclear magnetic resonance resolve epitaxial layers?
Steven K. Buratto; David N. Shykind; Daniel P. Weitekamp
J. Vac. Sci. Technol. B 10, 1740–1743 (1992) https://doi.org/10.1116/1.586233
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Interfacial atomic structure and band offsets at semiconductor heterojunctions
R. G. Dandrea; C. B. Duke; Alex Zunger
J. Vac. Sci. Technol. B 10, 1744–1753 (1992) https://doi.org/10.1116/1.586234
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How does the chemical nature of the interface modify the band offset?
Y. Foulon; C. Priester; G. Allan; J. C. Garcia; J. P. Landesman
J. Vac. Sci. Technol. B 10, 1754–1756 (1992) https://doi.org/10.1116/1.586235
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Internal barriers in GaAs epitaxial layers produced by delta‐doped dipoles
T.‐H. Shen; A. C. Ford; M. Elliott; R. H. Williams; D. I. Westwood; D. A. Woolf; J. P. Marlow; J. E. Aubrey; G. Hill
J. Vac. Sci. Technol. B 10, 1757–1760 (1992) https://doi.org/10.1116/1.586236
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GaInAs/InP and GaInP/GaAs (100) interfaces: An ultraviolet photoelectron spectroscopy study
J. P. Landesman; J. C. Garcia; J. Massies; G. Jezequel; P. Maurel; J. P. Hirtz; P. Alnot
J. Vac. Sci. Technol. B 10, 1761–1768 (1992) https://doi.org/10.1116/1.586237
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Are there Tamm‐state donors at the InAs–AlSb quantum well interface?
Herbert Kroemer; Chanh Nguyen; Berinder Brar
J. Vac. Sci. Technol. B 10, 1769–1772 (1992) https://doi.org/10.1116/1.586238
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Effect of interface composition on the band offsets at InAs/AlSb (001) heterojunctions
J. R. Waldrop; G. J. Sullivan; R. W. Grant; E. A. Kraut; W. A. Harrison
J. Vac. Sci. Technol. B 10, 1773–1778 (1992) https://doi.org/10.1116/1.586239
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Reflection high‐energy electron diffraction studies of the growth of InAs/Ga1−xInxSb strained‐layer superlattices
D. A. Collins; T. C. Fu; T. C. McGill; D. H. Chow
J. Vac. Sci. Technol. B 10, 1779–1783 (1992) https://doi.org/10.1116/1.586240
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Measurement of reflection high‐energy electron diffraction oscillations during molecular‐beam epitaxial growth of GaAs on a rotating substrate
G. W. Turner; A. J. Isles
J. Vac. Sci. Technol. B 10, 1784–1786 (1992) https://doi.org/10.1116/1.586241
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Interfaces in GaAs/AlAs: Perfection and applications
Michael H. Bode; Abbas Ourmazd
J. Vac. Sci. Technol. B 10, 1787–1792 (1992) https://doi.org/10.1116/1.586242
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Binary AlAs/GaAs versus ternary GaAlAs/GaAs interfaces: A dramatic difference of perfection
D. Bimberg; F. Heinrichsdorff; R. K. Bauer; D. Gerthsen; D. Stenkamp; D. E. Mars; J. N. Miller
J. Vac. Sci. Technol. B 10, 1793–1798 (1992) https://doi.org/10.1116/1.586201
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Atomic scale survey of III–V epitaxial interfaces
H. W. M. Salemink; O. Albrektsen
J. Vac. Sci. Technol. B 10, 1799–1802 (1992) https://doi.org/10.1116/1.586202
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Scanning tunneling optical spectroscopy of semiconductor thin films and quantum wells
B. W. Wessels; L. Q. Qian
J. Vac. Sci. Technol. B 10, 1803–1806 (1992) https://doi.org/10.1116/1.586203
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Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si
E. A. Fitzgerald; Y.‐H. Xie; D. Monroe; P. J. Silverman; J. M. Kuo; A. R. Kortan; F. A. Thiel; B. E. Weir
J. Vac. Sci. Technol. B 10, 1807–1819 (1992) https://doi.org/10.1116/1.586204
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Lattice tilt and dislocations in compositionally step‐graded buffer layers for mismatched InGaAs/GaAs heterointerfaces
K. L. Kavanagh; J. C. P. Chang; J. Chen; J. M. Fernandez; H. H. Wieder
J. Vac. Sci. Technol. B 10, 1820–1823 (1992) https://doi.org/10.1116/1.586205
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Magnetotransport properties of two‐dimensional channels in pseudomorphic and strain relaxed In0.17Ga0.83As heterojunctions
J. M. Fernández; Jianhui Chen; H. H. Wieder
J. Vac. Sci. Technol. B 10, 1824–1828 (1992) https://doi.org/10.1116/1.586206
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Growth modes and relaxation mechanisms of strained InGaAs layers grown on InP(001)
M. Gendry; V. Drouot; C. Santinelli; G. Hollinger; C. Miossi; M. Pitaval
J. Vac. Sci. Technol. B 10, 1829–1834 (1992) https://doi.org/10.1116/1.586207
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Sublattice orientation dilemma: A reflection high‐energy electron diffraction and x‐ray photoelectron diffraction study of GaAs growth on vicinal Si(001) surfaces
J. Olivier; B. Bartenlian; R. Bisaro; F. Wyczisk
J. Vac. Sci. Technol. B 10, 1835–1839 (1992) https://doi.org/10.1116/1.586208
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InGaAs/InP quantum wells on vicinal Si(001): Structural and optical properties
M. Grundmann; A. Krost; D. Bimberg; H. Cerva
J. Vac. Sci. Technol. B 10, 1840–1843 (1992) https://doi.org/10.1116/1.586209
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Low‐temperature formation of device‐quality SiO2/Si interfaces by a two‐step remote plasma‐assisted oxidation/deposition process
T. Yasuda; Y. Ma; S. Habermehl; G. Lucovsky
J. Vac. Sci. Technol. B 10, 1844–1851 (1992) https://doi.org/10.1116/1.586210
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Characterization of point defect generation at silicon surfaces using gold diffusion
R. K. Graupner; J. A. Van Vechten; P. Harwood
J. Vac. Sci. Technol. B 10, 1852–1855 (1992) https://doi.org/10.1116/1.586211
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GaSb‐oxide removal and surface passivation using an electron cyclotron resonance hydrogen source
Z. Lu; Y. Jiang; W. I. Wang; M. C. Teich; R. M. Osgood, Jr.
J. Vac. Sci. Technol. B 10, 1856–1861 (1992) https://doi.org/10.1116/1.586212
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Vacuum ultraviolet photoelectron spectroscopy study of the interaction of molecular sulfur with the GaAs(100) surface
L. Roberts; G. Hughes; B. Fennema; M. Carbery
J. Vac. Sci. Technol. B 10, 1862–1866 (1992) https://doi.org/10.1116/1.586213
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Role of defects in the passivation of III–V semiconductor surfaces modified by alkali metals: O2/Rb/p‐ and n‐type GaSb(110)
K. M. Schirm; P. Soukiassian; P. S. Mangat; Z. Hurych; L. Soonckindt; J. J. Bonnet
J. Vac. Sci. Technol. B 10, 1867–1873 (1992) https://doi.org/10.1116/1.586214
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Tunneling spectroscopy on compensating surface defects induced by Si doping of molecular‐beam epitaxially grown GaAs(001)
M. D. Pashley; K. W. Haberern; R. M. Feenstra
J. Vac. Sci. Technol. B 10, 1874–1880 (1992) https://doi.org/10.1116/1.586215
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Atom‐resolved imaging and spectroscopy on the GaAs(001) surface using tunneling microscopy
V. Bressler‐Hill; M. Wassermeier; K. Pond; R. Maboudian; G. A. D. Briggs; P. M. Petroff; W. H. Weinberg
J. Vac. Sci. Technol. B 10, 1881–1885 (1992) https://doi.org/10.1116/1.586216
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Work function, electron affinity, and band bending at decapped GaAs(100) surfaces
W. Chen; M. Dumas; D. Mao; A. Kahn
J. Vac. Sci. Technol. B 10, 1886–1890 (1992) https://doi.org/10.1116/1.586217
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Dramatic work function variations of molecular‐beam epitaxially grown GaAs(100) surfaces
R. Duszak; C. J. Palmstro/m; L. T. Florez; Y.‐N. Yang; J. H. Weaver
J. Vac. Sci. Technol. B 10, 1891–1897 (1992) https://doi.org/10.1116/1.586218
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Temperature‐dependent chemical and electronic structure of reconstructed GaAs (100) surfaces
I. M. Vitomirov; A. D. Raisanen; A. C. Finnefrock; R. E. Viturro; L. J. Brillson; P. D. Kirchner; G. D. Pettit; J. M. Woodall
J. Vac. Sci. Technol. B 10, 1898–1903 (1992) https://doi.org/10.1116/1.586219
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Electromodulation study of GaAs with excess arsenic
A. C. Warren; J. M. Woodall; P. D. Kirchner; X. Yin; X. Guo; Fred H. Pollak; M. R. Melloch
J. Vac. Sci. Technol. B 10, 1904–1907 (1992) https://doi.org/10.1116/1.586220
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Comparison of the geometric structure and electron reflectivity of A/B‐NiSi2/Si(111) and U/F‐Si(111)‐7×7 interfaces
J. A. Kubby; W. J. Greene
J. Vac. Sci. Technol. B 10, 1908–1913 (1992) https://doi.org/10.1116/1.586221
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Monolayer coverage dependence for the surface photovoltage of Si(100)/Na
A. Hamawi; L. Walldén
J. Vac. Sci. Technol. B 10, 1914–1917 (1992) https://doi.org/10.1116/1.586157
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In overlayers on Sb passivated GaAs
A. M. Green; M. Yamada; T. Kendelewicz; A. Herrera‐Gomez; W. E. Spicer
J. Vac. Sci. Technol. B 10, 1918–1922 (1992) https://doi.org/10.1116/1.586158
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Interface stoichiometry dependence of the Schottky barrier height of CoGa and GaAs
T. C. Kuo; K. L. Wang; R. Arghavani; T. George; T. L. Lin
J. Vac. Sci. Technol. B 10, 1923–1927 (1992) https://doi.org/10.1116/1.586159
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Electronic structure of samarium atoms adsorbed on the GaAs(110) surface
G. Allan; C. Delerue
J. Vac. Sci. Technol. B 10, 1928–1931 (1992) https://doi.org/10.1116/1.586160
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Inhomogeneous and wide range of barrier heights at metal/molecular‐beam epitaxy GaAs(100) interfaces observed with electrical measurements
S. Chang; A. Raisanen; L. J. Brillson; J. L. Shaw; P. D. Kirchner; G. D. Pettit; J. M. Woodall
J. Vac. Sci. Technol. B 10, 1932–1939 (1992) https://doi.org/10.1116/1.586161
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Schottky barrier height and negative electron affinity of titanium on (111) diamond
J. van der Weide; R. J. Nemanich
J. Vac. Sci. Technol. B 10, 1940–1943 (1992) https://doi.org/10.1116/1.586162
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Fermi‐level inhomogeneities on the GaAs (110) surface imaged with a photoelectron microscope
Changyoung Kim; Paul L. King; Piero Pianetta
J. Vac. Sci. Technol. B 10, 1944–1948 (1992) https://doi.org/10.1116/1.586163
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Strain and the two‐dimensional electronic structure of monolayers of Bi/InAs(110) and Bi/GaAs(110)
D. Heskett; D. McIlroy; D. M. Swanston; A. B. McLean; N. J. DiNardo; H. Munekata; R. Ludeke
J. Vac. Sci. Technol. B 10, 1949–1952 (1992) https://doi.org/10.1116/1.586164
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Surface atomic structure and bonding of GaAs(110)‐p(1×1)–Bi (1 ML)
Ann M. Bowler; John C. Hermanson; John P. LaFemina; C. B. Duke
J. Vac. Sci. Technol. B 10, 1953–1958 (1992) https://doi.org/10.1116/1.586165
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Interface states and the transport of two‐dimensional interface excitons in AlGaAs/GaAs structures
G. D. Gilliland; D. J. Wolford; G. A. Northrop; M. S. Petrovic; T. F. Kuech; J. A. Bradley
J. Vac. Sci. Technol. B 10, 1959–1964 (1992) https://doi.org/10.1116/1.586166
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Defects in strained In0.2Ga0.8As/GaAs multiple quantum wells on patterned and unpatterned substrates: A near‐infrared cathodoluminescence study
D. H. Rich; K. C. Rajkumar; Li Chen; A. Madhukar; T. George; J. Maserjian; F. J. Grunthaner; A. Larsson
J. Vac. Sci. Technol. B 10, 1965–1970 (1992) https://doi.org/10.1116/1.586167
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Study of partial strain release and surface states formed on the sidewall of InGaAs quantum‐well wires
I‐Hsing Tan; Richard Mirin; Takashi Yasuda; Evelyn L. Hu; John Bowers; Craig B. Prater; Paul K. Hansma; Ming Yuan He; Anthony G. Evans
J. Vac. Sci. Technol. B 10, 1971–1974 (1992) https://doi.org/10.1116/1.586168
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Photoluminescence and photoluminescence excitation spectroscopy of H‐related defects in strained InxGa1−xAs/GaAs(100) quantum wells
Z. Sobiesierski; D. A. Woolf; A. Frova; R. T. Phillips
J. Vac. Sci. Technol. B 10, 1975–1979 (1992) https://doi.org/10.1116/1.586169
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Effect of Γ–X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures
D. Z.‐Y. Ting; T. C. McGill
J. Vac. Sci. Technol. B 10, 1980–1983 (1992) https://doi.org/10.1116/1.586170
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Dynamic effects of coherent epitaxial strain and surface stability: Ge on Si(100)
Martin Zinke‐Allmang
J. Vac. Sci. Technol. B 10, 1984–1989 (1992) https://doi.org/10.1116/1.586171
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Surface morphology of molecular‐beam epitaxially grown Si1−xGex layers on (100) and (110) Si
W. T. Pike; R. W. Fathauer; M. S. Anderson
J. Vac. Sci. Technol. B 10, 1990–1993 (1992) https://doi.org/10.1116/1.586172
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Study of phonons and long‐range order in Si–Ge superlattices using empirical interatomic potentials
K. E. Khor; S. Das Sarma
J. Vac. Sci. Technol. B 10, 1994–1997 (1992) https://doi.org/10.1116/1.586173
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Band‐edge exciton luminescence from Si/strained Si1−xGex/Si structures
J. C. Sturm; X. Xiao; P. V. Schwartz; C. W. Liu; L. C. Lenchyshyn; M. L. W. Thewalt
J. Vac. Sci. Technol. B 10, 1998–2001 (1992) https://doi.org/10.1116/1.586174
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Characterization of Si1−xGex/Si (100) heterostructures by photoluminescence and admittance spectroscopy
A. Souifi; G. Brémond; T. Benyattou; G. Guillot; D. Dutartre; I. Berbezier
J. Vac. Sci. Technol. B 10, 2002–2007 (1992) https://doi.org/10.1116/1.586175
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In situ transmission electron microscopy measurements of the electrical and structural properties of strained layer GeSi/Si p–n junctions
F. M. Ross; R. Hull; D. Bahnck; J. C. Bean; J. Peticolas; R. A. Hamm; H. A. Huggins
J. Vac. Sci. Technol. B 10, 2008–2012 (1992) https://doi.org/10.1116/1.586176
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Si(100) and Ge(100) core‐level shifts: A reevaluation
X. Yang; R. Cao; J. Terry; P. Pianetta
J. Vac. Sci. Technol. B 10, 2013–2017 (1992) https://doi.org/10.1116/1.586177
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Photoluminescence from pseudomorphic Si1−xGex quantum wells grown by molecular beam epitaxy: Variation of the band gap with high pressure
G. A. Northrop; J. F. Morar; D. J. Wolford; J. A. Bradley
J. Vac. Sci. Technol. B 10, 2018–2021 (1992) https://doi.org/10.1116/1.586178
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Measurements of critical point energies in the conduction band structure of Si1−xGex
J. F. Morar; P. E. Batson
J. Vac. Sci. Technol. B 10, 2022–2025 (1992) https://doi.org/10.1116/1.586311
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Interfacial point defects in heavily implanted silicon germanium alloys
M. E. Zvanut; W. E. Carlos; M. E. Twigg; R. E. Stahlbush; D. J. Godbey
J. Vac. Sci. Technol. B 10, 2026–2029 (1992) https://doi.org/10.1116/1.586310
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Observation of quantum dot levels produced by strain modulation of GaAs–AlGaAs quantum wells
K. Kash; Derek D. Mahoney; B. P. Van der Gaag; A. S. Gozdz; J. P. Harbison; L. T. Florez
J. Vac. Sci. Technol. B 10, 2030–2033 (1992) https://doi.org/10.1116/1.586312
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Surface and interface ordering on non‐(100)‐oriented GaAs substrates
R. Nötzel; K. Ploog
J. Vac. Sci. Technol. B 10, 2034–2039 (1992) https://doi.org/10.1116/1.586313
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Growth of p‐ and n‐type GaAs/(AlGa)As double barrier resonant tunneling devices on (311)A and (111)B substrate orientations
P. A. Harrison; R. K. Hayden; M. Henini; E. C. Valadares; O. H. Hughes; L. Eaves
J. Vac. Sci. Technol. B 10, 2040–2045 (1992) https://doi.org/10.1116/1.586314
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Direct determination of impact ionization rates near threshold in Al0.9Ga0.1As and GaAs using molecular‐beam epitaxially grown GaAs/Al0.9Ga0.1As structures and soft x‐ray photoemission
E. A. Eklund; P. D. Kirchner; D. K. Shuh; F. R. McFeely; E. Cartier
J. Vac. Sci. Technol. B 10, 2046–2050 (1992) https://doi.org/10.1116/1.586315
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Lateral p–n junctions between quasi‐two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces
Henry K. Harbury; Wolfgang Porod; Stephen M. Goodnick
J. Vac. Sci. Technol. B 10, 2051–2055 (1992) https://doi.org/10.1116/1.586316
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Quantum wells, excitons, and lasers at blue‐green wavelengths in ZnSe‐based heterostructures
Arto V. Nurmikko; Robert L. Gunshor; Masakazu Kobayashi
J. Vac. Sci. Technol. B 10, 2056–2061 (1992) https://doi.org/10.1116/1.586317
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Optical analysis of metalorganic vapor phase epitaxy grown ZnS/ZnSe/GaAs(100) heterostructures: Carrier diffusion and interface sharpness
J. Hermans; V. Wagner; J. Geurts; J. Woitok; J. Söllner; M. Heuken; K. Heime
J. Vac. Sci. Technol. B 10, 2062–2065 (1992) https://doi.org/10.1116/1.586318
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In situ Raman studies during the epitaxial growth of ZnSe layers on GaAs(110)
C. Nowak; D. R. T. Zahn; U. Rossow; W. Richter
J. Vac. Sci. Technol. B 10, 2066–2071 (1992) https://doi.org/10.1116/1.586319
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Schottky barrier induced injecting contact on wide band gap semiconductors
Y. X. Liu; M. W. Wang; J. O. McCaldin; T. C. McGill
J. Vac. Sci. Technol. B 10, 2072–2076 (1992) https://doi.org/10.1116/1.586320
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Epitaxial Ga2Se3 layers grown on GaAs(100) using a heterovalent exchange reaction
D. R. T. Zahn; A. Krost; M. Kolodziejczyk; W. Richter
J. Vac. Sci. Technol. B 10, 2077–2081 (1992) https://doi.org/10.1116/1.586321
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Photoelectron holography of Si(100)‐[2×1] and other surface and thin‐film structures
B. P. Tonner; J. Zhang; X. Chen; Z.‐L. Han; G. R. Harp; D. K. Saldin
J. Vac. Sci. Technol. B 10, 2082–2087 (1992) https://doi.org/10.1116/1.586322
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Near‐surface atom imaging using multiple‐energy photoelectron holography
L. J. Terminello; J. J. Barton; D. A. Lapiano‐Smith
J. Vac. Sci. Technol. B 10, 2088–2091 (1992) https://doi.org/10.1116/1.586323
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Momentum‐space images of surface dimers on GaAs(001)‐(2×4) by high‐energy Auger and x‐ray photoelectron diffraction
S. A. Chambers; V. A. Loebs; Hua Li; S. Y. Tong
J. Vac. Sci. Technol. B 10, 2092–2098 (1992) https://doi.org/10.1116/1.586324
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