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Issues
January 1992
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
ISSN 1071-1023
EISSN 1520-8567
Identification of the facet planes of phase I TiO2(001) rutile by scanning tunneling microscopy and low energy electron diffraction
J. Vac. Sci. Technol. B 10, 6–15 (1992)
https://doi.org/10.1116/1.586393
Strain‐induced dimer adatom stacking fault structures of germanium on Si(111)‐(√3×√3)R30°:B observed by scanning tunneling microscopy
J. Vac. Sci. Technol. B 10, 16–18 (1992)
https://doi.org/10.1116/1.586292
Dependence of the quality factor of micromachined silicon beam resonators on pressure and geometry
J. Vac. Sci. Technol. B 10, 19–26 (1992)
https://doi.org/10.1116/1.586300
Particle contamination on a silicon substrate in a SF6/Ar plasma
J. Vac. Sci. Technol. B 10, 30–36 (1992)
https://doi.org/10.1116/1.586351
The role of oxygen excitation and loss in plasma‐enhanced deposition of silicon dioxide from tetraethylorthosilicate
J. Vac. Sci. Technol. B 10, 37–45 (1992)
https://doi.org/10.1116/1.586361
Platinum silicide junction spiking in arsenic doped polysilicon transistors
J. Vac. Sci. Technol. B 10, 53–59 (1992)
https://doi.org/10.1116/1.586388
Applications of sawtooth doping superlattice for negative‐differential‐resistance devices fabrication
J. Vac. Sci. Technol. B 10, 60–66 (1992)
https://doi.org/10.1116/1.586391
GaAs doping by rapid thermal diffusion of a laser‐deposited elemental Zn source film: Shallow and laterally graded diffusions
J. Vac. Sci. Technol. B 10, 77–83 (1992)
https://doi.org/10.1116/1.586395
Deep levels and DX centers in AlxGa1−xAs/GaAs. I. Composition dependence study
J. Vac. Sci. Technol. B 10, 84–93 (1992)
https://doi.org/10.1116/1.586396
Deep levels and DX centers in AlxGa1−xAs/GaAs. II. Field effect deep level transient spectroscopy study
J. Vac. Sci. Technol. B 10, 94–102 (1992)
https://doi.org/10.1116/1.586397
Spin–disorder scattering in europium‐doped indium antimonide thin films
J. Vac. Sci. Technol. B 10, 110–113 (1992)
https://doi.org/10.1116/1.586308
Fabrication of 50 nm line‐and‐space x‐ray masks in thick Au using a 50 keV electron beam system
J. Vac. Sci. Technol. B 10, 118–121 (1992)
https://doi.org/10.1116/1.586284
Deep submicron contact fabrication by electron beam direct writing with intraproximity effect correction
J. Vac. Sci. Technol. B 10, 122–125 (1992)
https://doi.org/10.1116/1.586285
Three‐dimensional analysis for contrast enhancement lithography by a three‐dimensional photolithography simulator
J. Vac. Sci. Technol. B 10, 126–132 (1992)
https://doi.org/10.1116/1.586286
Proximity effect correction data processing system for electron beam lithography
J. Vac. Sci. Technol. B 10, 133–142 (1992)
https://doi.org/10.1116/1.586287
Effects of Si on electromigration of Al–Cu–Si/TiN layered metallization
Yasushi Koubuchi; Shin‐ichi Ishida; Masashi Sahara; Yukio Tanigaki; Tokio Kato; Jin Onuki; Motoo Suwa
J. Vac. Sci. Technol. B 10, 143–148 (1992)
https://doi.org/10.1116/1.586288
Filling of contacts and interconnects with Cu under XeCl excimer laser irradiation
J. Vac. Sci. Technol. B 10, 160–165 (1992)
https://doi.org/10.1116/1.586290
Noncontact, 1 °C resolution temperature measurement by projection moiré interferometry
J. Vac. Sci. Technol. B 10, 166–169 (1992)
https://doi.org/10.1116/1.586291
Internal structure and two‐dimensional order of monolayer C60 molecules on gold substrate
J. Vac. Sci. Technol. B 10, 170–174 (1992)
https://doi.org/10.1116/1.586293
Anisotropic and damageless etching of single‐crystalline silicon using chlorine trifluoride molecular beam
J. Vac. Sci. Technol. B 10, 175–178 (1992)
https://doi.org/10.1116/1.586294
Proximity exposure compensation and resist debris formation in electron beam lithography
J. Vac. Sci. Technol. B 10, 179–182 (1992)
https://doi.org/10.1116/1.586295
Preparation of transmission electron microscopy cross sections using nanofabrication techniques
J. Vac. Sci. Technol. B 10, 183–186 (1992)
https://doi.org/10.1116/1.586296
Erratum: An investigation of the properties of cubic GaN grown on GaAs by plasma‐assisted molecular‐beam epitaxy [J. Vac. Sci. Technol. B 9, 1924 (1991)]
S. Strite; J. Ruan; Z. Li; N. Manning; A. Salvador; H. Chen; David J. Smith; W. J. Choyke; H. Morkoç
J. Vac. Sci. Technol. B 10, 187 (1992)
https://doi.org/10.1116/1.586297
Laser‐induced reactions of semiconductor surfaces
J. Vac. Sci. Technol. B 10, 201–205 (1992)
https://doi.org/10.1116/1.586302
Pulsed ultraviolet laser stimulated chlorination mechanisms for Si(111)
J. Vac. Sci. Technol. B 10, 216–220 (1992)
https://doi.org/10.1116/1.586304
Diethylsilane on silicon surfaces: Adsorption and decomposition kinetics
J. Vac. Sci. Technol. B 10, 221–227 (1992)
https://doi.org/10.1116/1.586305
Investigation of the laser‐Al2O3(112̄0) surface interaction using excitation by pairs of picosecond laser pulses
J. Vac. Sci. Technol. B 10, 228–230 (1992)
https://doi.org/10.1116/1.586306
The interaction of synchrotron light with water adsorbed on a Ag‐field emitter in the presence of a high electric field
J. Vac. Sci. Technol. B 10, 231–234 (1992)
https://doi.org/10.1116/1.586339
Arsenic passivation of silicon by photo‐assisted metalorganic vapor‐phase epitaxy
J. Vac. Sci. Technol. B 10, 235–238 (1992)
https://doi.org/10.1116/1.586340
Chemical vapor deposition of amorphous hydrogenated silicon: Chemistry–structure–performance relationships
J. Vac. Sci. Technol. B 10, 239–247 (1992)
https://doi.org/10.1116/1.586341
Scanning tunneling microscopy studies on the growth and structure of thin metallic films on metal substrates
J. Vac. Sci. Technol. B 10, 256–261 (1992)
https://doi.org/10.1116/1.586343
Selective low pressure chemical vapor deposition of copper and platinum
J. Vac. Sci. Technol. B 10, 262–267 (1992)
https://doi.org/10.1116/1.586344
Rotationally anisotropic second‐harmonic generation studies of the structure and thermal stability of Cu(110)
J. Vac. Sci. Technol. B 10, 268–273 (1992)
https://doi.org/10.1116/1.586345
Etching of film by synchrotron radiation in hydrogen and its application to low‐temperature surface cleaning
J. Vac. Sci. Technol. B 10, 274–277 (1992)
https://doi.org/10.1116/1.585856
Measurements of abrupt transitions in III–V compounds and heterostructures
J. Vac. Sci. Technol. B 10, 296–301 (1992)
https://doi.org/10.1116/1.586349
Secondary ion mass spectrometry analysis strategy for shallow junctions on test and product silicon wafers
J. Vac. Sci. Technol. B 10, 323–328 (1992)
https://doi.org/10.1116/1.586353
Secondary ion mass spectrometry depth profiling of nanometer‐scale p+‐n junctions fabricated by Ga+ focused ion beam implantation
J. Vac. Sci. Technol. B 10, 333–335 (1992)
https://doi.org/10.1116/1.586355
Secondary ion mass spectrometry depth profiling of boron, antimony, and germanium deltas in silicon and implications for profile deconvolution
J. Vac. Sci. Technol. B 10, 336–341 (1992)
https://doi.org/10.1116/1.586282
Qualification and application of profiling data for model development and characterization
J. Vac. Sci. Technol. B 10, 348–352 (1992)
https://doi.org/10.1116/1.586357
Reconstructed two‐dimensional doping profiles from multiple one‐dimensional secondary ion mass spectrometry measurements
J. Vac. Sci. Technol. B 10, 369–379 (1992)
https://doi.org/10.1116/1.586360
Photoionization of sputtered neutrals for reliable and sensitive depth profiles
J. Vac. Sci. Technol. B 10, 380–384 (1992)
https://doi.org/10.1116/1.586362
Quantitative depth profiling resonance ionization mass spectrometry of GaAs/AlGaAs heterojunction bipolar transistors
J. Vac. Sci. Technol. B 10, 385–387 (1992)
https://doi.org/10.1116/1.586363
A contact model for Poisson‐based spreading resistance correction schemes incorporating Schottky barrier and pressure effects
J. Vac. Sci. Technol. B 10, 413–420 (1992)
https://doi.org/10.1116/1.586367
Spreading resistance analysis with carrier spilling correction
J. Vac. Sci. Technol. B 10, 426–431 (1992)
https://doi.org/10.1116/1.586369
A new spreading resistance correction scheme combining variable radius and barrier resistance with epilayer matching
J. Vac. Sci. Technol. B 10, 432–437 (1992)
https://doi.org/10.1116/1.586370
Electrical characterization of shallow arsenic profiles using SRP2
J. Vac. Sci. Technol. B 10, 442–448 (1992)
https://doi.org/10.1116/1.586372
Profiling of composition and carrier concentration in AlxGa1−xAs by point contact techniques
J. Vac. Sci. Technol. B 10, 456–462 (1992)
https://doi.org/10.1116/1.586374
Carrier diffusion effects in III–V semiconductor structures measured by the point contact current voltage technique
G. W. Eldridge; H. L. Berkowitz; R. J. Hillard; J. M. Heddleson; P. Rai‐Choudhury; R. G. Mazur; G. E. Stillman
J. Vac. Sci. Technol. B 10, 463–467 (1992)
https://doi.org/10.1116/1.586375
Measurement of ultra‐abrupt doping transitions using capacitance versus voltage techniques
J. Vac. Sci. Technol. B 10, 468–473 (1992)
https://doi.org/10.1116/1.586376
Practical implementation of metal oxide semiconductor capacitor majority carrier corrected dopant profiling
J. Vac. Sci. Technol. B 10, 474–479 (1992)
https://doi.org/10.1116/1.586378
Optimization of the capacitance–voltage profiling method based on inverse modeling
J. Vac. Sci. Technol. B 10, 480–484 (1992)
https://doi.org/10.1116/1.586379
Numerical extraction of ultra‐shallow one‐dimensional metal–oxide–semiconductor doping profiles from capacitance–voltage measurements
J. Vac. Sci. Technol. B 10, 485–490 (1992)
https://doi.org/10.1116/1.586380
Two‐dimensional delineation of shallow junctions in silicon by selective etching of transmission electron microscopy cross sections
J. Vac. Sci. Technol. B 10, 491–495 (1992)
https://doi.org/10.1116/1.586381
Two‐dimensional pn‐junction delineation on cleaved silicon samples with an ultrahigh vacuum scanning tunneling microscope
J. Vac. Sci. Technol. B 10, 496–501 (1992)
https://doi.org/10.1116/1.586382
Model and simulation of scanning tunneling microscope tip/semiconductor interactions in pn junction delineation
J. Vac. Sci. Technol. B 10, 502–507 (1992)
https://doi.org/10.1116/1.586383
Scanning tunneling microscopy and spectroscopy for studying cross‐sectioned Si(100)
J. Vac. Sci. Technol. B 10, 508–514 (1992)
https://doi.org/10.1116/1.586384
Shallow junctions for 0.1 μm n‐type metal–oxide semiconductor devices
J. Vac. Sci. Technol. B 10, 515–523 (1992)
https://doi.org/10.1116/1.586385
Secondary ion mass spectrometry–spreading resistance profiling study on the outdiffusion from poly‐ and monocrystalline cobaltsilicide
J. Vac. Sci. Technol. B 10, 524–532 (1992)
https://doi.org/10.1116/1.586386
Measurement of defect profiles in reactive ion etched silicon
J. Vac. Sci. Technol. B 10, 540–543 (1992)
https://doi.org/10.1116/1.586389
Lateral and in‐depth junction delineation of buried Sb‐doped layers following silicidation
J. Vac. Sci. Technol. B 10, 544–549 (1992)
https://doi.org/10.1116/1.586390
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Science challenges and research opportunities for plasma applications in microelectronics
David B. Graves, Catherine B. Labelle, et al.
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
A. S. Stodolna, T. W. Mechielsen, et al.