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Photoemission study of GeAs(2̄01): A model for the As‐stabilized Ge surface on GaAs/Ge heterojunctions

F. Stucki; G. J. Lapeyre; Robert S. Bauer; P. Zurcher; J. C. Mikkelsen, Jr.

J. Vac. Sci. Technol. B 1, 865–870 (1983) https://doi.org/10.1116/1.582707

View articletitled, Photoemission study of GeAs(2̄01): A model for the As‐stabilized Ge surface on GaAs/Ge heterojunctions

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Solid‐phase‐epitaxial growth and formation of metastable alloys in ion implanted silicon

J. Narayan; O. W. Holland; B. R. Appleton

J. Vac. Sci. Technol. B 1, 871–887 (1983) https://doi.org/10.1116/1.582708

Abstract

View articletitled, Solid‐phase‐epitaxial growth and formation of metastable alloys in ion implanted silicon

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The use of pulsed laser irradiation in silicon molecular beam epitaxy: A comparative low energy electron diffraction study

T. de Jong; W. A. S. Douma; L. Smit; V. V. Korablev; F. W. Saris

J. Vac. Sci. Technol. B 1, 888–898 (1983) https://doi.org/10.1116/1.582709

Abstract

View articletitled, The use of pulsed laser irradiation in silicon molecular beam epitaxy: A comparative low energy electron diffraction study

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Study of the stepwise oxidation and nitridation of Si(111): Electron stimulated desorption, Auger spectroscopy, and electron loss spectroscopy

M. L. Knotek; J. E. Houston

J. Vac. Sci. Technol. B 1, 899–914 (1983) https://doi.org/10.1116/1.582710

Abstract

View articletitled, Study of the stepwise oxidation and nitridation of Si(111): Electron stimulated desorption, Auger spectroscopy, and electron loss spectroscopy

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Early stages of silicide formation on W, Ni, and Pt surfaces, an atom probe, and field ion microscope study

T. T. Tsong; S. C. Wang; F. H. Liu; H. Cheng; M. Ahmad

J. Vac. Sci. Technol. B 1, 915–922 (1983) https://doi.org/10.1116/1.582711

Abstract

View articletitled, Early stages of silicide formation on W, Ni, and Pt surfaces, an atom probe, and field ion microscope study

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Kinetics of the ablative photodecomposition of organic polymers in the far ultraviolet (193 nm)

R. Srinivasan

J. Vac. Sci. Technol. B 1, 923–926 (1983) https://doi.org/10.1116/1.582712

Abstract

View articletitled, Kinetics of the ablative photodecomposition of organic polymers in the far ultraviolet (193 nm)

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Etch products from the reaction of XeF₂ with SiO₂, Si₃N₄, SiC, and Si in the presence of ion bombardment

Harold F. Winters

J. Vac. Sci. Technol. B 1, 927–931 (1983) https://doi.org/10.1116/1.582713

Abstract

View articletitled, Etch products from the reaction of XeF2 with SiO2, Si3N4, SiC, and Si in the presence of ion bombardment

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Ammonium fluoride deposition during plasma etching of silicon nitride

J. A. Brewer; G. W. Miller

J. Vac. Sci. Technol. B 1, 932–934 (1983) https://doi.org/10.1116/1.582714

Abstract

View articletitled, Ammonium fluoride deposition during plasma etching of silicon nitride

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Plasma enhanced beam deposition of thin films at low temperatures

R. P. H. Chang; S. Darack; E. Lane; C. C. Chang; D. Allara; E. Ong

J. Vac. Sci. Technol. B 1, 935–942 (1983) https://doi.org/10.1116/1.582715

Abstract

View articletitled, Plasma enhanced beam deposition of thin films at low temperatures

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Optical monitoring for rate and uniformity control of low power plasma‐enhanced CVD

W. C. Dautremont‐Smith; J. Lopata

J. Vac. Sci. Technol. B 1, 943–946 (1983) https://doi.org/10.1116/1.582716

Abstract

View articletitled, Optical monitoring for rate and uniformity control of low power plasma‐enhanced CVD

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Molecular level fabrication techniques and molecular electronic devices

Forrest L. Carter

J. Vac. Sci. Technol. B 1, 959–968 (1983) https://doi.org/10.1116/1.582717

Abstract

View articletitled, Molecular level fabrication techniques and molecular electronic devices

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A review of laser–microchemical processing

D. J. Ehrlich; J. Y. Tsao

J. Vac. Sci. Technol. B 1, 969–984 (1983) https://doi.org/10.1116/1.582718

Abstract

View articletitled, A review of laser–microchemical processing

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Maskless etching of a nanometer structure by focused ion beams

Masanori Komuro; Hiroshi Hiroshima; Hisao Tanoue; Toshihiko Kanayama

J. Vac. Sci. Technol. B 1, 985–989 (1983) https://doi.org/10.1116/1.582719

Abstract

View articletitled, Maskless etching of a nanometer structure by focused ion beams

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A large angle electrostatic deflection, variable shaped, electron beam exposure system

Shigeru Moriya; Kazuhiko Komatsu; Katsuhiro Harada; Toyoki Kitayama

J. Vac. Sci. Technol. B 1, 990–994 (1983) https://doi.org/10.1116/1.582720

Abstract

View articletitled, A large angle electrostatic deflection, variable shaped, electron beam exposure system

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Design aspects of the optics of the VLS‐1000 electron‐beam direct‐write lithography system

P. F. Petric; N. J. Taylor; M. Utlaut

J. Vac. Sci. Technol. B 1, 995–998 (1983) https://doi.org/10.1116/1.582721

Abstract

View articletitled, Design aspects of the optics of the VLS‐1000 electron‐beam direct‐write lithography system

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Dot matrix electron beam lithography

T. H. Newman; R. F. W. Pease; W. DeVore

J. Vac. Sci. Technol. B 1, 999–1002 (1983) https://doi.org/10.1116/1.582722

Abstract

View articletitled, Dot matrix electron beam lithography

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EL‐3 application to 0.5 μm semiconductor lithography

D. E. Davis; S. J. Gillespie; S. L. Silverman; W. Stickel; A. D. Wilson

J. Vac. Sci. Technol. B 1, 1003–1006 (1983) https://doi.org/10.1116/1.582662

Abstract

View articletitled, EL‐3 application to 0.5 μm semiconductor lithography

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Edge contrast: A new definition for comparative lithography tool characterization

W. Stickel; G. O. Langner

J. Vac. Sci. Technol. B 1, 1007–1010 (1983) https://doi.org/10.1116/1.582663

Abstract

View articletitled, Edge contrast: A new definition for comparative lithography tool characterization

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A field emission e‐beam system for nanometer lithography

D. Stephani; E. Kratschmer; H. Beneking

J. Vac. Sci. Technol. B 1, 1011–1013 (1983) https://doi.org/10.1116/1.582664

Abstract

View articletitled, A field emission e‐beam system for nanometer lithography

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Performance results of an electron beam lithography machine and process by means of dc electrical test structures

Paul Rissman; En‐Den Liu; Geraint Owen

J. Vac. Sci. Technol. B 1, 1014–1019 (1983) https://doi.org/10.1116/1.582665

Abstract

View articletitled, Performance results of an electron beam lithography machine and process by means of dc electrical test structures

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The magnitude and significance of proximity effects in electron image projector defined layers

K. H. Nicholas; R. A. Ford; H. E. Brockman; I. J. Stemp

J. Vac. Sci. Technol. B 1, 1020–1022 (1983) https://doi.org/10.1116/1.582666

Abstract

View articletitled, The magnitude and significance of proximity effects in electron image projector defined layers

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Registration mark detection in electron beam proximity printing

P. Nehmiz; U. Behringer; H. Bohlen; M. Kallmeyer

J. Vac. Sci. Technol. B 1, 1023–1027 (1983) https://doi.org/10.1116/1.582667

Abstract

View articletitled, Registration mark detection in electron beam proximity printing

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Chemically assisted ion beam etching for submicron structures

J. D. Chinn; I. Adesida; E. D. Wolf

J. Vac. Sci. Technol. B 1, 1028–1032 (1983) https://doi.org/10.1116/1.582668

Abstract

View articletitled, Chemically assisted ion beam etching for submicron structures

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Local plasma oxidation and reactive ion etching of metal films for ultrafine line pattern inversion and transfer

J. Nulman; J. P. Krusius

J. Vac. Sci. Technol. B 1, 1033–1036 (1983) https://doi.org/10.1116/1.582669

Abstract

View articletitled, Local plasma oxidation and reactive ion etching of metal films for ultrafine line pattern inversion and transfer

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Reactive ion etching for submicron structures of refractory metal silicides and polycides

M. Zhang; J. Z. Li; I. Adesida; E. D. Wolf

J. Vac. Sci. Technol. B 1, 1037–1042 (1983) https://doi.org/10.1116/1.582670

Abstract

View articletitled, Reactive ion etching for submicron structures of refractory metal silicides and polycides

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Large area ion beam assisted etching of GaAs with high etch rates and controlled anisotropy

G. A. Lincoln; M. W. Geis; S. Pang; N. N. Efremow

J. Vac. Sci. Technol. B 1, 1043–1046 (1983) https://doi.org/10.1116/1.582671

Abstract

View articletitled, Large area ion beam assisted etching of GaAs with high etch rates and controlled anisotropy

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Maskless etching of GaAs and InP using a scanning microplasma

Yukinori Ochiai; Kenji Gamo; Susumu Namba

J. Vac. Sci. Technol. B 1, 1047–1049 (1983) https://doi.org/10.1116/1.582672

Abstract

View articletitled, Maskless etching of GaAs and InP using a scanning microplasma

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Reactive ion etching of GaAs using CCl₂F₂ and the effect of Ar addition

J. Chaplart; B. Fay; Nuyen T. Linh

J. Vac. Sci. Technol. B 1, 1050–1052 (1983) https://doi.org/10.1116/1.582673

Abstract

View articletitled, Reactive ion etching of GaAs using CCl2F2 and the effect of Ar addition

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Reactive ion etching of GaAs and InP using SiCl₄

M. B. Stern; P. F. Liao

J. Vac. Sci. Technol. B 1, 1053–1055 (1983) https://doi.org/10.1116/1.582674

Abstract

View articletitled, Reactive ion etching of GaAs and InP using SiCl4

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Focused ion beam microlithography using an etch‐stop process in gallium‐doped silicon

P. H. La Marche; R. Levi‐Setti; Y. L. Wang

J. Vac. Sci. Technol. B 1, 1056–1058 (1983) https://doi.org/10.1116/1.582675

Abstract

View articletitled, Focused ion beam microlithography using an etch‐stop process in gallium‐doped silicon

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High resolution patterning of silicon by selective gallium doping

I. L. Berry; A. L. Caviglia

J. Vac. Sci. Technol. B 1, 1059–1061 (1983) https://doi.org/10.1116/1.582676

Abstract

View articletitled, High resolution patterning of silicon by selective gallium doping

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Deep‐UV photolithographic applications of copolymer (methacrylonitrile–methacrylic acid)

H. Hiraoka; W. L. Welsh, Jr.; J. Bargon

J. Vac. Sci. Technol. B 1, 1062–1065 (1983) https://doi.org/10.1116/1.582677

Abstract

View articletitled, Deep‐UV photolithographic applications of copolymer (methacrylonitrile–methacrylic acid)

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Poly(chloromethylstyrene): A high performance x‐ray resist

Hsia S. Choong; Frederic J. Kahn

J. Vac. Sci. Technol. B 1, 1066–1071 (1983) https://doi.org/10.1116/1.582678

Abstract

View articletitled, Poly(chloromethylstyrene): A high performance x‐ray resist

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Conventional novolak resists for storage ring x‐ray lithography

J. G. Lane; J. R. Maldonado; A. N. Cleland; R. P. Haelbich; J. P. Silverman; J. M. Warlaumont

J. Vac. Sci. Technol. B 1, 1072–1075 (1983) https://doi.org/10.1116/1.582679

Abstract

View articletitled, Conventional novolak resists for storage ring x‐ray lithography

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Direct engraving on positive resists by synchrotron radiation

S. Ichimura; M. Hirata; H. Tanino; N. Atoda; M. Ono; K. Hoh

J. Vac. Sci. Technol. B 1, 1076–1079 (1983) https://doi.org/10.1116/1.582636

Abstract

View articletitled, Direct engraving on positive resists by synchrotron radiation

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Submicrometer‐gate GaAs FET fabrication using masked ion beam/optical hybrid lithography

I. Adesida; M. Zhang; R. Sadler; R. Tiberio; E. D. Wolf

J. Vac. Sci. Technol. B 1, 1080–1083 (1983) https://doi.org/10.1116/1.582637

Abstract

View articletitled, Submicrometer‐gate GaAs FET fabrication using masked ion beam/optical hybrid lithography

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Read‐only memory with electron‐beam programmable floating‐gate transistors

D. C. Shaver

J. Vac. Sci. Technol. B 1, 1084–1087 (1983) https://doi.org/10.1116/1.582638

Abstract

View articletitled, Read‐only memory with electron‐beam programmable floating‐gate transistors

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Fabrication of a high density storage medium for electron beam memory

James A. Oro; J. C. Wolfe

J. Vac. Sci. Technol. B 1, 1088–1090 (1983) https://doi.org/10.1116/1.582639

Abstract

View articletitled, Fabrication of a high density storage medium for electron beam memory

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Fabrication of apertures, slots, and grooves at the 8–80 nm scale in silicon and metal films

A. Muray; M. Isaacson; I. Adesida; B. Whitehead

J. Vac. Sci. Technol. B 1, 1091–1095 (1983) https://doi.org/10.1116/1.582640

Abstract

View articletitled, Fabrication of apertures, slots, and grooves at the 8–80 nm scale in silicon and metal films

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Practical aspects of microfabrication in the 100 nm regime

D. P. Kern; P. J. Houzego; P. J. Coane; T. H. P. Chang

J. Vac. Sci. Technol. B 1, 1096–1100 (1983) https://doi.org/10.1116/1.582641

Abstract

View articletitled, Practical aspects of microfabrication in the 100 nm regime

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Electron beam lithography from 20 to 120 keV with a high quality beam

R. E. Howard; H. G. Craighead; L. D. Jackel; P. M. Mankiewich; M. Feldman

J. Vac. Sci. Technol. B 1, 1101–1104 (1983) https://doi.org/10.1116/1.582642

Abstract

View articletitled, Electron beam lithography from 20 to 120 keV with a high quality beam

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Generation of <50 nm period gratings using edge defined techniques

D. C. Flanders; N. N. Efremow

J. Vac. Sci. Technol. B 1, 1105–1108 (1983) https://doi.org/10.1116/1.582643

Abstract

View articletitled, Generation of <50 nm period gratings using edge defined techniques

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Applications of surface textures produced with natural lithography

H. W. Deckman; J. H. Dunsmuir

J. Vac. Sci. Technol. B 1, 1109–1112 (1983) https://doi.org/10.1116/1.582644

Abstract

View articletitled, Applications of surface textures produced with natural lithography

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Selective Si and Be implantation in GaAs using a 100 kV mass‐separating focused ion beam system with an Au–Si–Be liquid metal ion source

Eizo Miyauchi; Hiroshi Arimoto; Hisao Hashimoto; Takao Utsumi

J. Vac. Sci. Technol. B 1, 1113–1116 (1983) https://doi.org/10.1116/1.582645

Abstract

View articletitled, Selective Si and Be implantation in GaAs using a 100 kV mass‐separating focused ion beam system with an Au–Si–Be liquid metal ion source

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100 keV focused ion beam system with a E×B mass filter for maskless ion implantation

Takao Shiokawa; Pil Hyon Kim; Koichi Toyoda; Susumu Namba; Takao Matsui; Kenji Gamo

J. Vac. Sci. Technol. B 1, 1117–1120 (1983) https://doi.org/10.1116/1.582646

Abstract

View articletitled, 100 keV focused ion beam system with a E×B mass filter for maskless ion implantation

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A new submicron ion probe system

T. Tsumagari; H. Ohiwa; T. Okutani; T. Noda

J. Vac. Sci. Technol. B 1, 1121–1124 (1983) https://doi.org/10.1116/1.582647

Abstract

View articletitled, A new submicron ion probe system

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Computer simulations of submicron FIB system optics

W. Thompson; I. Honjo; Mark Utlaut; H. Enge

J. Vac. Sci. Technol. B 1, 1125–1128 (1983) https://doi.org/10.1116/1.582648

Abstract

View articletitled, Computer simulations of submicron FIB system optics

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Use of a modified paraxial formalism for particle beam dynamics: Application to liquid metal ion sources

N. M. Miskovsky; P. H. Cutler; T. E. Feuchtwang

J. Vac. Sci. Technol. B 1, 1129–1131 (1983) https://doi.org/10.1116/1.582649

Abstract

View articletitled, Use of a modified paraxial formalism for particle beam dynamics: Application to liquid metal ion sources

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High resolution mass spectrometry of liquid metal ion sources

B. Wilkens; T. Venkatesan

J. Vac. Sci. Technol. B 1, 1132–1136 (1983) https://doi.org/10.1116/1.582650

Abstract

View articletitled, High resolution mass spectrometry of liquid metal ion sources

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Improvement of electrostatic lenses for ion beam lithography

M. Szilagyi

J. Vac. Sci. Technol. B 1, 1137–1140 (1983) https://doi.org/10.1116/1.582651

Abstract

View articletitled, Improvement of electrostatic lenses for ion beam lithography

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Space charge effects in focused ion beams

Y. W. Yau; T. R. Groves; R. F. W. Pease

J. Vac. Sci. Technol. B 1, 1141–1144 (1983) https://doi.org/10.1116/1.582652

Abstract

View articletitled, Space charge effects in focused ion beams

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Characteristics of an advanced electrohydrodynamic ion source with additional mode of surface ionization

T. Okutani; M. Fukuda; T. Noda; H. Tamura; H. Watanabe; C. Shepherd

J. Vac. Sci. Technol. B 1, 1145–1147 (1983) https://doi.org/10.1116/1.582653

Abstract

View articletitled, Characteristics of an advanced electrohydrodynamic ion source with additional mode of surface ionization

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SiO₂ films deposited on Si by an ionized cluster beam

Y. Minowa; K. Yamanishi; K. Tsukamoto

J. Vac. Sci. Technol. B 1, 1148–1151 (1983) https://doi.org/10.1116/1.582654

Abstract

View articletitled, SiO2 films deposited on Si by an ionized cluster beam

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Silicon nitride stencil masks for high resolution ion lithography proximity printing

J. N. Randall; D. C. Flanders; N. P. Economou; J. P. Donnelly; E. I. Bromley

J. Vac. Sci. Technol. B 1, 1152–1155 (1983) https://doi.org/10.1116/1.582655

Abstract

View articletitled, Silicon nitride stencil masks for high resolution ion lithography proximity printing

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Application of chlorinated polymethylstyrene, CPMS, to electron beam lithography

Yoichi Kamoshida; Mitsunobu Koshiba; Hiroshi Yoshimoto; Yoshiyuki Harita; Kunihiro Harada

J. Vac. Sci. Technol. B 1, 1156–1159 (1983) https://doi.org/10.1116/1.582656

Abstract

View articletitled, Application of chlorinated polymethylstyrene, CPMS, to electron beam lithography

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Copolymers of itaconic acid and methyl methacrylate as positive electron beam resists

Y. M. N. Namasté; S. K. Obendorf; C. C. Anderson; P. D. Krasicky; F. Rodriguez; R. Tiberio

J. Vac. Sci. Technol. B 1, 1160–1165 (1983) https://doi.org/10.1116/1.582657

Abstract

View articletitled, Copolymers of itaconic acid and methyl methacrylate as positive electron beam resists

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PMMA electron resists with narrow molecular weight distribution

H. W. Deckman; J. H. Dunsmuir

J. Vac. Sci. Technol. B 1, 1166–1170 (1983) https://doi.org/10.1116/1.582753

Abstract

View articletitled, PMMA electron resists with narrow molecular weight distribution

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Direct pattern fabrication on silicone resin by vapor phase electron beam polymerization

Masao Morita; Saburo Imamura; Toshiaki Tamamura; Osamu Kogure; Kei Murase

J. Vac. Sci. Technol. B 1, 1171–1173 (1983) https://doi.org/10.1116/1.582754

Abstract

View articletitled, Direct pattern fabrication on silicone resin by vapor phase electron beam polymerization

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High resolution patterning with Ag₂S/As₂S₃ inorganic electron‐beam resist and reactive ion etching

B. Singh; S. P. Beaumont; A. Webb; P. G. Bower; C. D. W. Wilkinson

J. Vac. Sci. Technol. B 1, 1174–1177 (1983) https://doi.org/10.1116/1.582755

Abstract

View articletitled, High resolution patterning with Ag2S/As2S3 inorganic electron‐beam resist and reactive ion etching

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Nitrocellulose as a self‐developing resist with submicrometer resolution and processing stability

M. W. Geis; J. N. Randall; T. F. Deutsch; N. N. Efremow; J. P. Donnelly; J. D. Woodhouse

J. Vac. Sci. Technol. B 1, 1178–1181 (1983) https://doi.org/10.1116/1.582756

Abstract

View articletitled, Nitrocellulose as a self‐developing resist with submicrometer resolution and processing stability

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Resist exposure with light ions

I. Adesida; C. Anderson; E. D. Wolf

J. Vac. Sci. Technol. B 1, 1182–1185 (1983) https://doi.org/10.1116/1.582757

Abstract

View articletitled, Resist exposure with light ions

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Contact lithography at 157 nm with an F₂ excimer laser

H. G. Craighead; J. C. White; R. E. Howard; L. D. Jackel; R. E. Behringer; J. E. Sweeney; R. W. Epworth

J. Vac. Sci. Technol. B 1, 1186–1189 (1983) https://doi.org/10.1116/1.582758

Abstract

View articletitled, Contact lithography at 157 nm with an F2 excimer laser

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A critical examination of submicron optical lithography using simulated projection images

Alan E. Rosenbluth; Douglas Goodman; B. J. Lin

J. Vac. Sci. Technol. B 1, 1190–1195 (1983) https://doi.org/10.1116/1.582759

Abstract

View articletitled, A critical examination of submicron optical lithography using simulated projection images

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A precision wide‐range optical gap measurement technique

D. C. Flanders; T. M. Lyszczarz

J. Vac. Sci. Technol. B 1, 1196–1199 (1983) https://doi.org/10.1116/1.582760

Abstract

View articletitled, A precision wide‐range optical gap measurement technique

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Deep‐UV spatial‐frequency doubling by combining multilayer mirrors with diffraction gratings

A. M. Hawryluk; Henry I. Smith; D. J. Ehrlich

J. Vac. Sci. Technol. B 1, 1200–1203 (1983) https://doi.org/10.1116/1.582745

Abstract

View articletitled, Deep‐UV spatial‐frequency doubling by combining multilayer mirrors with diffraction gratings

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An improved technique for resist‐profile control in holographic lithography

Henri J. Lezec; Erik H. Anderson; Henry I. Smith

J. Vac. Sci. Technol. B 1, 1204–1206 (1983) https://doi.org/10.1116/1.582746

Abstract

View articletitled, An improved technique for resist‐profile control in holographic lithography

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Fabrication of submicron crossed square wave gratings by dry etching and thermoplastic replication techniques

H. W. Lehmann; R. Widmer; M. Ebnoether; A. Wokaun; M. Meier; S. K. Miller

J. Vac. Sci. Technol. B 1, 1207–1210 (1983) https://doi.org/10.1116/1.582747

Abstract

View articletitled, Fabrication of submicron crossed square wave gratings by dry etching and thermoplastic replication techniques

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Electron beam fabrication of high resolution masks

J. L. Kenty; L. C. Puzio; F. J. Schauerte

J. Vac. Sci. Technol. B 1, 1211–1214 (1983) https://doi.org/10.1116/1.582748

Abstract

View articletitled, Electron beam fabrication of high resolution masks

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Use of antireflective coating in bilayer resist process

Yi‐Ching Lin; Sue Jones; Gene Fuller

J. Vac. Sci. Technol. B 1, 1215–1218 (1983) https://doi.org/10.1116/1.582749

Abstract

View articletitled, Use of antireflective coating in bilayer resist process

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Submicrometer contact hole delineation with a two‐layer deep‐UV portable conformable masking system

K. E. Petrillo; V. W. Chao; B. J. Lin

J. Vac. Sci. Technol. B 1, 1219–1224 (1983) https://doi.org/10.1116/1.582750

Abstract

View articletitled, Submicrometer contact hole delineation with a two‐layer deep‐UV portable conformable masking system

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Multilayer resist technique for submicron optical lithography

C. H. Ting; K. L. Liauw

J. Vac. Sci. Technol. B 1, 1225–1234 (1983) https://doi.org/10.1116/1.582751

Abstract

View articletitled, Multilayer resist technique for submicron optical lithography

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Planarization phenomena in multilayer resist processing

L. K. White

J. Vac. Sci. Technol. B 1, 1235–1240 (1983) https://doi.org/10.1116/1.582761

Abstract

View articletitled, Planarization phenomena in multilayer resist processing

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A novel bilevel resist system

A. W. McCullough; E. Pavelchek; H. Windischmann

J. Vac. Sci. Technol. B 1, 1241–1246 (1983) https://doi.org/10.1116/1.582752

Abstract

View articletitled, A novel bilevel resist system

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A two‐layer photoresist process for patterning high‐reflectivity substrates

E. Ong; R. M. Baker; L. P. Hale

J. Vac. Sci. Technol. B 1, 1247–1250 (1983) https://doi.org/10.1116/1.582762

Abstract

View articletitled, A two‐layer photoresist process for patterning high‐reflectivity substrates

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Enhanced brightness x‐ray source

B. Leslie; A. Neukermans; T. Simon; J. Foster

J. Vac. Sci. Technol. B 1, 1251–1256 (1983) https://doi.org/10.1116/1.582763

Abstract

View articletitled, Enhanced brightness x‐ray source

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Design parameters for a small storage ring optimized as an x‐ray lithography source

Warren D. Grobman

J. Vac. Sci. Technol. B 1, 1257–1261 (1983) https://doi.org/10.1116/1.582764

Abstract

View articletitled, Design parameters for a small storage ring optimized as an x‐ray lithography source

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Design and performance of an x‐ray lithography beam line at a storage ring

R. P. Haelbich; J. P. Silverman; W. D. Grobman; J. R. Maldonado; J. M. Warlaumont

J. Vac. Sci. Technol. B 1, 1262–1266 (1983) https://doi.org/10.1116/1.582765

Abstract

View articletitled, Design and performance of an x‐ray lithography beam line at a storage ring

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Diffraction effects on pattern replication with synchrotron radiation

N. Atoda; H. Kawakatsu; H. Tanino; S. Ichimura; M. Hirata; K. Hoh

J. Vac. Sci. Technol. B 1, 1267–1270 (1983) https://doi.org/10.1116/1.582766

Abstract

View articletitled, Diffraction effects on pattern replication with synchrotron radiation

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Investigations of x‐ray exposure using plane scanning mirrors

M. Bieber; H.‐U Scheunemann; H. Betz; A. Heuberger

J. Vac. Sci. Technol. B 1, 1271–1275 (1983) https://doi.org/10.1116/1.582727

Abstract

View articletitled, Investigations of x‐ray exposure using plane scanning mirrors

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A dual grating alignment technique for x‐ray lithography

Hiroo Kinoshita; Atsunobu Une; Makoto Iki

J. Vac. Sci. Technol. B 1, 1276–1279 (1983) https://doi.org/10.1116/1.582728

Abstract

View articletitled, A dual grating alignment technique for x‐ray lithography

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A zone plate shadow camera for 100 keV x rays and 6 MeV protons

G. F. Stone; N. M. Ceglio

J. Vac. Sci. Technol. B 1, 1280–1284 (1983) https://doi.org/10.1116/1.582729

Abstract

View articletitled, A zone plate shadow camera for 100 keV x rays and 6 MeV protons

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X‐ray phase lens design and fabrication

N. M. Ceglio; A. M. Hawryluk; M. Schattenburg

J. Vac. Sci. Technol. B 1, 1285–1288 (1983) https://doi.org/10.1116/1.582730

Abstract

View articletitled, X‐ray phase lens design and fabrication

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In‐lens deflection system with nonequisectored‐type multipole electrostatic deflectors

E. Goto; T. Soma; M. Idesawa; T. Sasaki; T. Goto; S. Konno; T. Someya; K. Tanaka; S. Miyauchi

J. Vac. Sci. Technol. B 1, 1289–1292 (1983) https://doi.org/10.1116/1.582731

Abstract

View articletitled, In‐lens deflection system with nonequisectored‐type multipole electrostatic deflectors

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Electron beam optical system with large field coverage for submicron lithography

Teruo Hosokawa; Hirofumi Morita

J. Vac. Sci. Technol. B 1, 1293–1297 (1983) https://doi.org/10.1116/1.582732

Abstract

View articletitled, Electron beam optical system with large field coverage for submicron lithography

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Optimization of the optical parameters in variable shape electron beam lithography

G. A. C. Jones; V. R. M. Rao; H. T. Sun; H. Ahmed

J. Vac. Sci. Technol. B 1, 1298–1302 (1983) https://doi.org/10.1116/1.582733

Abstract

View articletitled, Optimization of the optical parameters in variable shape electron beam lithography

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A simplified focusing and deflection system with vertical beam landing

Katsuhiro Kuroda; Susumu Ozasa; Tsutomu Komoda

J. Vac. Sci. Technol. B 1, 1303–1306 (1983) https://doi.org/10.1116/1.582734

Abstract

View articletitled, A simplified focusing and deflection system with vertical beam landing

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Trajectory displacement due to local space‐charge force

Tateaki Sasaki

J. Vac. Sci. Technol. B 1, 1307–1311 (1983) https://doi.org/10.1116/1.582735

Abstract

View articletitled, Trajectory displacement due to local space‐charge force

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Correction of spherical aberration in charged particle lenses using aspherical foils

Aart A. van Gorkum

J. Vac. Sci. Technol. B 1, 1312–1315 (1983) https://doi.org/10.1116/1.582736

Abstract

View articletitled, Correction of spherical aberration in charged particle lenses using aspherical foils

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A large area deflection system with very low aberration

H. P. Kuo; T. R. Groves

J. Vac. Sci. Technol. B 1, 1316–1321 (1983) https://doi.org/10.1116/1.582737

Abstract

View articletitled, A large area deflection system with very low aberration

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Numerical considerations on multipole‐type electrostatic deflectors

M. Idesawa; T. Soma; E. Goto; T. Sasaki

J. Vac. Sci. Technol. B 1, 1322–1326 (1983) https://doi.org/10.1116/1.582738

Abstract

View articletitled, Numerical considerations on multipole‐type electrostatic deflectors

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Electron beam tool/resist interdependence

Nicholas K. Eib; Fletcher Jones

J. Vac. Sci. Technol. B 1, 1327–1330 (1983) https://doi.org/10.1116/1.582739

Abstract

View articletitled, Electron beam tool/resist interdependence

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Computer simulation of high dose reactive‐ion implants into silicon

R. M. Dobson; R. P. Arrowsmith; P. L. F. Hemment

J. Vac. Sci. Technol. B 1, 1331–1333 (1983) https://doi.org/10.1116/1.582740

Abstract

View articletitled, Computer simulation of high dose reactive‐ion implants into silicon

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Effects of dry etching on GaAs

S. W. Pang; G. A. Lincoln; R. W. McClelland; P. D. DeGraff; M. W. Geis; W. J. Piacentini

J. Vac. Sci. Technol. B 1, 1334–1337 (1983) https://doi.org/10.1116/1.582741

Abstract

View articletitled, Effects of dry etching on GaAs

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A high performance electron energy loss spectrometer for use with a dedicated STEM

M. Isaacson; M. Scheinfein

J. Vac. Sci. Technol. B 1, 1338–1343 (1983) https://doi.org/10.1116/1.582742

Abstract

View articletitled, A high performance electron energy loss spectrometer for use with a dedicated STEM

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Surface potential measurements on floating targets with a parallel beam technique

M. Brunner; E. Menzel

J. Vac. Sci. Technol. B 1, 1344–1347 (1983) https://doi.org/10.1116/1.582743

Abstract

View articletitled, Surface potential measurements on floating targets with a parallel beam technique

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Characterization and performance improvement of secondary electron analyzers

E. Menzel; M. Brunner

J. Vac. Sci. Technol. B 1, 1348–1351 (1983) https://doi.org/10.1116/1.582723

Abstract

View articletitled, Characterization and performance improvement of secondary electron analyzers

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Heating and temperature‐induced distortions of silicon x‐ray masks

K. Heinrich; H. Betz; A. Heuberger

J. Vac. Sci. Technol. B 1, 1352–1357 (1983) https://doi.org/10.1116/1.582724

Abstract

View articletitled, Heating and temperature‐induced distortions of silicon x‐ray masks

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Simulation of backscattered electron signals for x‐ray mask inspection

M. G. Rosenfield; A. R. Neureuther; R. Viswanathan

J. Vac. Sci. Technol. B 1, 1358–1363 (1983) https://doi.org/10.1116/1.582725

Abstract

View articletitled, Simulation of backscattered electron signals for x‐ray mask inspection

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A technique for the determination of stress in thin films

E. I. Bromley; J. N. Randall; D. C. Flanders; R. W. Mountain

J. Vac. Sci. Technol. B 1, 1364–1366 (1983) https://doi.org/10.1116/1.582744

Abstract

View articletitled, A technique for the determination of stress in thin films

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Exposure and development simulations for nanometer electron beam lithography

N. Samoto; R. Shimizu; H. Hashimoto; I. Adesida; E. Wolf; S. Namba

J. Vac. Sci. Technol. B 1, 1367–1371 (1983) https://doi.org/10.1116/1.582726

Abstract

View articletitled, Exposure and development simulations for nanometer electron beam lithography

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Polysiloxane resist as a probe for energy deposited in electron beam exposed resists

J. Paraszczak; D. Kern; M. Hatzakis; J. Bucchignano; E. Arthur; M. Rosenfield

J. Vac. Sci. Technol. B 1, 1372–1377 (1983) https://doi.org/10.1116/1.582703

Abstract

View articletitled, Polysiloxane resist as a probe for energy deposited in electron beam exposed resists

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Proximity effect correction on substrates of variable material composition

Peter Vettiger; Theo Forster; Dieter P. Kern

J. Vac. Sci. Technol. B 1, 1378–1382 (1983) https://doi.org/10.1116/1.582704

Abstract

View articletitled, Proximity effect correction on substrates of variable material composition

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An image processing approach to fast, efficient proximity correction for electron beam lithography

D. G. L. Chow; J. F. McDonald; D. C. King; W. Smith; K. Molnar; A. J. Steckl

J. Vac. Sci. Technol. B 1, 1383–1390 (1983) https://doi.org/10.1116/1.582705

Abstract

View articletitled, An image processing approach to fast, efficient proximity correction for electron beam lithography

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Spatial resolution limits in electron beam nanolithography

David F. Kyser

J. Vac. Sci. Technol. B 1, 1391–1397 (1983) https://doi.org/10.1116/1.582706

Abstract

View articletitled, Spatial resolution limits in electron beam nanolithography

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