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Issues
July 1983
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
ISSN 0734-211X
EISSN 2327-9877
Initial reactions at the interface of Pt and amorphous silicon
J. Vac. Sci. Technol. B 1, 519–523 (1983)
https://doi.org/10.1116/1.582592
Modulation of atomic interdiffusion at the Si(111)–Au interface
J. Vac. Sci. Technol. B 1, 524–529 (1983)
https://doi.org/10.1116/1.582590
The Schottky barrier height of platinum nickel silicide
J. Vac. Sci. Technol. B 1, 533–539 (1983)
https://doi.org/10.1116/1.582594
Study of the GaAs–Au and Si–SiO2 interface formation by the Kelvin method
J. Vac. Sci. Technol. B 1, 540–545 (1983)
https://doi.org/10.1116/1.582595
Formation and properties of the copper silicon(111) interface
J. Vac. Sci. Technol. B 1, 546–552 (1983)
https://doi.org/10.1116/1.582596
Similarities in chemical intermixing at the Cu/InP and Cu/Si interfaces
J. Vac. Sci. Technol. B 1, 564–569 (1983)
https://doi.org/10.1116/1.582599
Interface formation at PbTe(100) surfaces: Ge, Al, and In overlayers
J. Vac. Sci. Technol. B 1, 570–573 (1983)
https://doi.org/10.1116/1.582600
The dependence of Al Schottky barrier height on surface conditions of GaAs and AlAs grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 1, 574–580 (1983)
https://doi.org/10.1116/1.582601
Palladium on GaAs: A reactive interface
J. Vac. Sci. Technol. B 1, 588–592 (1983)
https://doi.org/10.1116/1.582603
Schottky barrier formation and intermixing of noble metals on GaAs(110)
J. Vac. Sci. Technol. B 1, 593–597 (1983)
https://doi.org/10.1116/1.582604
The effect of surface oxygen on the intermixing and Schottky barrier at GaAs(110)–Au interfaces
J. Vac. Sci. Technol. B 1, 598–601 (1983)
https://doi.org/10.1116/1.582605
Barrier height and leakage reduction in n‐GaAs–platinum group metal Schottky barriers upon exposure to hydrogen
J. Vac. Sci. Technol. B 1, 602–607 (1983)
https://doi.org/10.1116/1.582606
Summary Abstract: The effect of doping on Fermi level position at a semiconductor–metal interface
J. Vac. Sci. Technol. B 1, 608–609 (1983)
https://doi.org/10.1116/1.582607
Schottky barrier formation and the initial metal–atom bonding state: InP(110)–Al vs GaAs(110)–Al
J. Vac. Sci. Technol. B 1, 610–612 (1983)
https://doi.org/10.1116/1.582608
Auger depth profiling studies of interdiffusion and chemical trapping at metal–InP interfaces
J. Vac. Sci. Technol. B 1, 618–622 (1983)
https://doi.org/10.1116/1.582610
Room temperature exchange reaction at the Al–InP(110) interface: Soft x‐ray photoemission studies
J. Vac. Sci. Technol. B 1, 623–627 (1983)
https://doi.org/10.1116/1.582611
Summary Abstract: Fermi‐level pinning energy and chemistry at InP(100) interfaces
J. Vac. Sci. Technol. B 1, 628–629 (1983)
https://doi.org/10.1116/1.582612
Transport characteristics of L‐point and Γ‐point electrons through GaAs–Ga1−xAlxAs–GaAs(111) double heterojunctions
J. Vac. Sci. Technol. B 1, 637–642 (1983)
https://doi.org/10.1116/1.582568
Effects of compositional grading on GaAs–Ga1−xAlxAs interface and quantum well electronic structure
J. Vac. Sci. Technol. B 1, 644–647 (1983)
https://doi.org/10.1116/1.582570
Thermal Soret diffusion in the liquid phase epitaxial growth of binary III–V compounds
J. Vac. Sci. Technol. B 1, 648–655 (1983)
https://doi.org/10.1116/1.582571
Interface properties of n‐ZnSe–p‐Ge heterojunctions grown by organometallic chemical vapor deposition
J. Vac. Sci. Technol. B 1, 656–660 (1983)
https://doi.org/10.1116/1.582572
Characterization of GaAs:O–Ge and ZnSe:O–Ge heterointerfaces grown on oxygen‐exposed GaAs and ZnSe substrates
J. Vac. Sci. Technol. B 1, 661–667 (1983)
https://doi.org/10.1116/1.582573
Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films
J. Vac. Sci. Technol. B 1, 668–674 (1983)
https://doi.org/10.1116/1.582574
Electrical measurements of the conduction band discontinuity of the abrupt Ge–GaAs 〈100〉 heterojunction
J. Vac. Sci. Technol. B 1, 675–681 (1983)
https://doi.org/10.1116/1.582575
Summary Abstract: Modification of bulk band photoemission features by Ge overlayers
J. Vac. Sci. Technol. B 1, 682–683 (1983)
https://doi.org/10.1116/1.582576
Band discontinuities and interface Fermi‐level positions in Ge–GaAs(110) heterojunctions
J. Vac. Sci. Technol. B 1, 684–686 (1983)
https://doi.org/10.1116/1.582577
Summary Abstract: Structural studies of InGaAs/GaAs and GaAsP/GaP strained‐layer superlattices by ion channeling
J. Vac. Sci. Technol. B 1, 687 (1983)
https://doi.org/10.1116/1.582578
Nucleation and strain relaxation at the InAs/GaAs(100) heterojunction
J. Vac. Sci. Technol. B 1, 688–695 (1983)
https://doi.org/10.1116/1.582579
Study of high order reconstructions of the Si(100) surface
J. Vac. Sci. Technol. B 1, 705–708 (1983)
https://doi.org/10.1116/1.582584
Si(111) 2×1 surface reconstructions calculated by the density‐functional method
J. Vac. Sci. Technol. B 1, 714–717 (1983)
https://doi.org/10.1116/1.582586
Application of orthogonal experimental design to LEED crystallography
J. Vac. Sci. Technol. B 1, 718–722 (1983)
https://doi.org/10.1116/1.582587
A first principles LCAO study of ideal and reconstructed diamond(111) 1×1 and 2×1 surfaces
J. Vac. Sci. Technol. B 1, 723–725 (1983)
https://doi.org/10.1116/1.582588
Angle‐resolved photoemission study of GaAs(100) surfaces grown by molecular beam epitaxy
J. Vac. Sci. Technol. B 1, 736–740 (1983)
https://doi.org/10.1116/1.582683
Damped oscillations in reflection high energy electron diffraction during GaAs MBE
J. Vac. Sci. Technol. B 1, 741–746 (1983)
https://doi.org/10.1116/1.582684
UV photoemission study of low temperature oxygen adsorption on GaAs(110)
J. Vac. Sci. Technol. B 1, 763–766 (1983)
https://doi.org/10.1116/1.582688
A Monte Carlo study of Si(111) surface oxidation
J. Vac. Sci. Technol. B 1, 767–772 (1983)
https://doi.org/10.1116/1.582689
MBE growth and characterization of single crystal silicon oxides on (111) and (100)silicon
J. Vac. Sci. Technol. B 1, 773–777 (1983)
https://doi.org/10.1116/1.582690
Native oxide formation and electrical instabilities at the insulator/InP interface
J. Vac. Sci. Technol. B 1, 778–781 (1983)
https://doi.org/10.1116/1.582691
Surface and interfacial properties of Ga0.47In0.53As–Al2O3 MIS structures
J. Vac. Sci. Technol. B 1, 782–786 (1983)
https://doi.org/10.1116/1.582692
Elevated temperature low energy ion cleaning of GaAs
J. Vac. Sci. Technol. B 1, 787–790 (1983)
https://doi.org/10.1116/1.582693
Cleaning chemistry of GaAs(100) and InSb(100) substrates for molecular beam epitaxy
J. Vac. Sci. Technol. B 1, 791–794 (1983)
https://doi.org/10.1116/1.582694
Photoelectrochemical passivation of GaAs surfaces
J. Vac. Sci. Technol. B 1, 795–798 (1983)
https://doi.org/10.1116/1.582680
The effect of low pressure plasma on Si–SiO2 structures and GaAs substrates
J. Vac. Sci. Technol. B 1, 799–802 (1983)
https://doi.org/10.1116/1.582695
Surface roughness scattering at the Si–SiO2 interface
J. Vac. Sci. Technol. B 1, 803–808 (1983)
https://doi.org/10.1116/1.582696
An optical characterization of defect levels induced by MBE growth of GaAs
J. Vac. Sci. Technol. B 1, 811–815 (1983)
https://doi.org/10.1116/1.582697
On the dependence of Schottky barrier height and interface states upon initial semiconductor surface parameters in GaAs {001}/Al junctions
J. Vac. Sci. Technol. B 1, 819–824 (1983)
https://doi.org/10.1116/1.582699
Time and temperature dependences of phosphorus evolution from InP
J. Vac. Sci. Technol. B 1, 825–826 (1983)
https://doi.org/10.1116/1.582700
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.