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Volume 1, Issue 2
April 1983
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena Cover Image for Volume 1, Issue 2
All Issues
ISSN 0734-211X
EISSN 2327-9877
Summary Abstract: Recent developments in MBE and summary of the MBE conference in Japan
A. Y. Cho
J. Vac. Sci. Technol. B 1, 119 (1983) https://doi.org/10.1116/1.582511
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A review of recent advances in semiconductor superlattices
L. L. Chang
J. Vac. Sci. Technol. B 1, 120–125 (1983) https://doi.org/10.1116/1.582512
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Heterostructure bipolar transistors: What should we build?
Herbert Kroemer
J. Vac. Sci. Technol. B 1, 126–130 (1983) https://doi.org/10.1116/1.582513
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Use of molecular beam epitaxy in research and development of selected high speed compound semiconductor devices
Lester F. Eastman
J. Vac. Sci. Technol. B 1, 131–134 (1983) https://doi.org/10.1116/1.582514
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Growth of refractory oxide films using solid oxygen sources in a molecular beam epitaxy apparatus
R. A. Stall
J. Vac. Sci. Technol. B 1, 135–137 (1983) https://doi.org/10.1116/1.582515
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Two‐stage arsenic cracking source with integral getter pump for MBE growth
B. S. Krusor; R. Z. Bachrach
J. Vac. Sci. Technol. B 1, 138–141 (1983) https://doi.org/10.1116/1.582516
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On the possibility of MBE growth interface modification by hydrogen
R. Z. Bachrach; R. D. Bringans
J. Vac. Sci. Technol. B 1, 142–145 (1983) https://doi.org/10.1116/1.582517
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Substrate rotation‐induced compositional oscillation in molecular beam epitaxy (MBE)
K. Alavi; P. M. Petroff; W. R. Wagner; A. Y. Cho
J. Vac. Sci. Technol. B 1, 146–148 (1983) https://doi.org/10.1116/1.582518
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Summary Abstract: Segregation of As observed on clean, cleaved GaAs(110) surfaces
F. Bartels; H. J. Clemens; W. Mönch
J. Vac. Sci. Technol. B 1, 149 (1983) https://doi.org/10.1116/1.582519
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Enhanced optical nonlinearities in superlattices
W. L. Bloss; L. Friedman
J. Vac. Sci. Technol. B 1, 150–151 (1983) https://doi.org/10.1116/1.582520
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Optical properties of GaSb–AlSb superlattices
E. E. Mendez; C.‐A. Chang; H. Takaoka; L. L. Chang; L. Esaki
J. Vac. Sci. Technol. B 1, 152–154 (1983) https://doi.org/10.1116/1.582521
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AlAs–GaAs superlattices for optimum photoluminescence intensity
W. D. Laidig; J. W. Lee; J. J. Wortman; M. A. Littlejohn
J. Vac. Sci. Technol. B 1, 155–157 (1983) https://doi.org/10.1116/1.582522
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Examination of MBE GaAs/Al0.3Ga0.7As superlattices by Auger electron spectroscopy
L. Peter Erickson; Bradway F. Phillips
J. Vac. Sci. Technol. B 1, 158–161 (1983) https://doi.org/10.1116/1.582523
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Autocompensation in molecular beam epitaxial gallium arsenide: The (110) orientation
J. M. Ballingall; C. E. C. Wood
J. Vac. Sci. Technol. B 1, 162–165 (1983) https://doi.org/10.1116/1.582524
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An investigation of GaAs films grown by MBE at low substrate temperatures and growth rates
G. M. Metze; A. R. Calawa; J. G. Mavroides
J. Vac. Sci. Technol. B 1, 166–169 (1983) https://doi.org/10.1116/1.582525
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The growth of high quality Alx Ga1−xAs by molecular beam epitaxy and its application to double‐heterojunction lasers
Douglas M. Collins; Dan E. Mars; Stephen J. Eglash
J. Vac. Sci. Technol. B 1, 170–173 (1983) https://doi.org/10.1116/1.582526
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Lead–rare‐earth chalcogenides grown by molecular beam epitaxy
Dale L. Partin
J. Vac. Sci. Technol. B 1, 174–177 (1983) https://doi.org/10.1116/1.582527
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Manganese and germanium redistribution in In0.53Ga0.47 As grown by molecular beam epitaxy
E. Silberg; T. Y. Chang; E. A. Caridi; C. A. Evans, Jr.; C. J. Hitzman
J. Vac. Sci. Technol. B 1, 178–181 (1983) https://doi.org/10.1116/1.582528
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Molecular beam epitaxial growth of InGaAsP
G. D. Holah; E. L. Meeks; F. L. Eisele
J. Vac. Sci. Technol. B 1, 182–185 (1983) https://doi.org/10.1116/1.582483
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Design and fabrication of high transconductance modulation‐doped (Al,Ga)As/GaAs FETs
K. Lee; M. S. Shur; T. J. Drummond; S. L. Su; W. G. Lyons; R. Fischer; H. Morkoç
J. Vac. Sci. Technol. B 1, 186–189 (1983) https://doi.org/10.1116/1.582484
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Temperature dependence of the I–V characteristics of modulation‐doped FETs
A. J. Valois; G. Y. Robinson; K. Lee; M. S. Shur
J. Vac. Sci. Technol. B 1, 190–195 (1983) https://doi.org/10.1116/1.582485
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The growth of thin, heavily doped layers for hot electron devices
J. J. Harris; J. M. Woodcock
J. Vac. Sci. Technol. B 1, 196–198 (1983) https://doi.org/10.1116/1.582486
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Growth of millimeter‐wave GaAs IMPATT structures by molecular beam epitaxy
H. D. Shih; B. Bayraktaroglu; W. M. Duncan
J. Vac. Sci. Technol. B 1, 199–201 (1983) https://doi.org/10.1116/1.582487
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GaInAs–AlInAs heterostructures for optical devices grown by MBE
D. F. Welch; G. W. Wicks; D. W. Woodard; L. F. Eastman
J. Vac. Sci. Technol. B 1, 202–204 (1983) https://doi.org/10.1116/1.582488
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Summary Abstract: A perspective in development of synthesized semiconductor superlattices
L. Esaki
J. Vac. Sci. Technol. B 1, 217 (1983) https://doi.org/10.1116/1.582489
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A typical example of metastability: Metallic glasses
Pol Duwez
J. Vac. Sci. Technol. B 1, 218–221 (1983) https://doi.org/10.1116/1.582490
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The stabilization of metastable phases by epitaxy
R. F. C. Farrow
J. Vac. Sci. Technol. B 1, 222–228 (1983) https://doi.org/10.1116/1.582491
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A review of recent research on the growth and physical properties of single crystal metastable elemental and alloy semiconductors
J. E. Greene
J. Vac. Sci. Technol. B 1, 229–237 (1983) https://doi.org/10.1116/1.582492
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Liquid phase epitaxy of unstable alloys: Substrate‐induced stabilization and connected effects
M. Quillec; H. Launois; M. C. Joncour
J. Vac. Sci. Technol. B 1, 238–242 (1983) https://doi.org/10.1116/1.582493
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A new type of order–disorder transition in metastable (GaAs)1−x Ge2x alloys
Kathie E. Newman; John D. Dow
J. Vac. Sci. Technol. B 1, 243–245 (1983) https://doi.org/10.1116/1.582494
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Rutherford backscattering/channeling and transmission electron microscopy analysis of epitaxial BaF2 films on Ge and InP
J. M. Phillips; L. C. Feldman; J. M. Gibson; M. L. McDonald
J. Vac. Sci. Technol. B 1, 246–249 (1983) https://doi.org/10.1116/1.582495
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Epitaxial growth of GaN/AlN heterostructures
S. Yoshida; S. Misawa; S. Gonda
J. Vac. Sci. Technol. B 1, 250–253 (1983) https://doi.org/10.1116/1.582496
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Thermal oxidation and anodic film–substrate reactions on Inx Ga1−x Asy P1−y
G. P. Schwartz; B. V. Dutt; M. Malyj; J. E. Griffiths; G. J. Gualtieri
J. Vac. Sci. Technol. B 1, 254–259 (1983) https://doi.org/10.1116/1.582497
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Summary Abstract: HgTe–CdTe superlattices
T. C. McGill; D. L. Smith
J. Vac. Sci. Technol. B 1, 260–261 (1983) https://doi.org/10.1116/1.582498
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Low pressure‐MOCVD growth of Ga0.47In0.53As–InP heterojunction and superlattices
M. Razeghi; J. P. Duchemin
J. Vac. Sci. Technol. B 1, 262–265 (1983) https://doi.org/10.1116/1.582499
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Epitaxial growth of elemental semiconductor films onto silicide/Si and fluoride/Si structures
H. Ishiwara; T. Asano; S. Furukawa
J. Vac. Sci. Technol. B 1, 266–271 (1983) https://doi.org/10.1116/1.582500
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Modulated structures and metastable dopant concentrations in silicon annealed with Q‐switched laser pulses
A. G. Cullis
J. Vac. Sci. Technol. B 1, 272–277 (1983) https://doi.org/10.1116/1.582501
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n‐i‐p‐i doping superlattices—metastable semiconductors with tunable properties
Gottfried H. Döhler
J. Vac. Sci. Technol. B 1, 278–284 (1983) https://doi.org/10.1116/1.582502
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Elementary excitations in semiconductors with n–i–p–i doping superlattices
P. Ruden
J. Vac. Sci. Technol. B 1, 285–288 (1983) https://doi.org/10.1116/1.582503
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Quantum transport in GaAs doping superlattices
J. C. Maan; Th. Englert; Ch. Uihlein; H. Künzel; K. Ploog; A. Fischer
J. Vac. Sci. Technol. B 1, 289–292 (1983) https://doi.org/10.1116/1.582504
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MBE growth of GaAs and III‐V alloys
C. T. Foxon
J. Vac. Sci. Technol. B 1, 293–297 (1983) https://doi.org/10.1116/1.582505
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Simulation models of the crystal–vapor interface
George H. Gilmer; Jeremy Q. Broughton
J. Vac. Sci. Technol. B 1, 298–304 (1983) https://doi.org/10.1116/1.582545
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Surface orientation dependent surface kinetics and interface roughening in molecular beam epitaxial growth of III–V semiconductors: A Monte Carlo study
Jasprit Singh; Anupam Madhukar
J. Vac. Sci. Technol. B 1, 305–312 (1983) https://doi.org/10.1116/1.582546
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Summary Abstract: Structure and luminescence of III–V compound superlattices
P. M. Petroff
J. Vac. Sci. Technol. B 1, 313 (1983) https://doi.org/10.1116/1.582547
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Summary Abstract: The role of metastable surfaces in determining MBE heterojunction structure: GaAs/Ge interfaces
Robert S. Bauer
J. Vac. Sci. Technol. B 1, 314 (1983) https://doi.org/10.1116/1.582548
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Structural studies of Ge–GaAs interfaces
Chin‐An Chang; Tung‐Sheng Kuan
J. Vac. Sci. Technol. B 1, 315–319 (1983) https://doi.org/10.1116/1.582549
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Measurement of potential at semiconductor interfaces by electron spectroscopy
R. W. Grant; E. A. Kraut; S. P. Kowalczyk; J. R. Waldrop
J. Vac. Sci. Technol. B 1, 320–327 (1983) https://doi.org/10.1116/1.582550
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Chemical and structural analysis of the GaAs/AlGaAs heterojunctions by spectroscopic ellipsometry
M. Erman; J. B. Theeten; N. Vodjdani; Y. Demay
J. Vac. Sci. Technol. B 1, 328–333 (1983) https://doi.org/10.1116/1.582551
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Abrupt transitions in composition and doping profile in GaAs–Ga1−xAlxAs heterostructures by atmospheric pressure MOVPE
J. Maluenda; P. M. Frijlink
J. Vac. Sci. Technol. B 1, 334–337 (1983) https://doi.org/10.1116/1.582552
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Characterization of thin layers on perfect crystals with a multipurpose high resolution x‐ray diffractometer
W. J. Bartels
J. Vac. Sci. Technol. B 1, 338–345 (1983) https://doi.org/10.1116/1.582553
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Channeling studies of III–V/III–V and IV/III–V semiconductor modulated structures
Chin‐An Chang
J. Vac. Sci. Technol. B 1, 346–352 (1983) https://doi.org/10.1116/1.582554
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Summary Abstract: Molecular beam growth of metal layers on silicon surfaces
Akira Kawazu
J. Vac. Sci. Technol. B 1, 353 (1983) https://doi.org/10.1116/1.582555
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Electronic and atomic structure of Ag–Si(111) and Ag–Ge(111)
G. Le Lay
J. Vac. Sci. Technol. B 1, 354–360 (1983) https://doi.org/10.1116/1.582556
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Initial growth of Al on GaAs(001) and electrical characterization of the interface
Thorwald G. Andersson; Stefan P. Svensson; Gunnar Landgren
J. Vac. Sci. Technol. B 1, 361–364 (1983) https://doi.org/10.1116/1.582557
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Interfacial studies of deposited thin films of refractory metals on gallium arsenide substrates. Mo–GaAs
K. Suh; H. K. Park; K. L. Moazed
J. Vac. Sci. Technol. B 1, 365–370 (1983) https://doi.org/10.1116/1.582558
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Transverse elastic waves in periodically layered infinite, semi‐infinite, and slab media
R. E. Camley; B. Djafari‐Rouhani; L. Dobrzynski; A. A. Maradudin
J. Vac. Sci. Technol. B 1, 371–375 (1983) https://doi.org/10.1116/1.582559
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A new infrared detector using electron emission from multiple quantum wells
J. S. Smith; L. C. Chiu; S. Margalit; A. Yariv; A. Y. Cho
J. Vac. Sci. Technol. B 1, 376–378 (1983) https://doi.org/10.1116/1.582560
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Electronic properties of strained‐layer superlattices
G. C. Osbourn
J. Vac. Sci. Technol. B 1, 379–382 (1983) https://doi.org/10.1116/1.582561
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Ga(As,P) strained‐layer superlattices: A ternary semiconductor with independently adjustable band gap and lattice constant
P. L. Gourley; R. M. Biefeld
J. Vac. Sci. Technol. B 1, 383–386 (1983) https://doi.org/10.1116/1.582562
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Doping and transport studies in InxGa1−xAs/GaAs strained‐layer superlattices
I. J. Fritz; L. R. Dawson; T. E. Zipperian
J. Vac. Sci. Technol. B 1, 387–390 (1983) https://doi.org/10.1116/1.582563
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Energy levels of hydrogenic impurities and Wannier excitons in quantum well structures
Ronald L. Greene; K. K. Bajaj
J. Vac. Sci. Technol. B 1, 391–397 (1983) https://doi.org/10.1116/1.582564
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Formation of silicon nitride layers on crystalline silicon by ion implantation as revealed by internal friction and infrared transmission measurements
A. S. Ogale; V. N. Bhoraskar; S. V. Ghaisas; V. P. Godbole; S. B. Ogale; B. S. Raye
J. Vac. Sci. Technol. B 1, 398–400 (1983) https://doi.org/10.1116/1.582565
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Fermi‐level pinning at heterojunctions
Roland E. Allen; Richard P. Beres; John D. Dow
J. Vac. Sci. Technol. B 1, 401–403 (1983) https://doi.org/10.1116/1.582566
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Electronic properties of MO–CVD grown InGaAs–InP heterojunctions and superlattices
M. Voos
J. Vac. Sci. Technol. B 1, 404–408 (1983) https://doi.org/10.1116/1.582613
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Optical transmission in GaSb–AlSb superlattices
P. Voisin; G. Bastard; M. Voos; E. E. Mendez; C.‐A. Chang; L. L. Chang; L. Esaki
J. Vac. Sci. Technol. B 1, 409–411 (1983) https://doi.org/10.1116/1.582614
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Plasma oscillations of layered electron gases in semiconductor heterostructures
D. Olego; A. Pinczuk; A. C. Gossard; W. Wiegmann
J. Vac. Sci. Technol. B 1, 412–414 (1983) https://doi.org/10.1116/1.582615
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A simple model for the index of refraction of GaAs–AlAs superlattices and heterostructure layers: Contributions of the states around Γ
J. P. Leburton; K. Hess
J. Vac. Sci. Technol. B 1, 415–419 (1983) https://doi.org/10.1116/1.582616
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Persistent red shift of the photoluminscence from the semi‐insulating GaAs substrate in an AlxGa1−xAs/GaAs modulation‐doped structure
Bernhard Fischer; Douglas M. Collins
J. Vac. Sci. Technol. B 1, 420–422 (1983) https://doi.org/10.1116/1.582617
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Observation of the deHaas–van Alphen effect in a two‐dimensional electron system
H. L. Störmer; T. Haavasoja; V. Narayanamurti; A. C. Gossard; W. Wiegmann
J. Vac. Sci. Technol. B 1, 423–426 (1983) https://doi.org/10.1116/1.582618
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Cyclotron resonance of 2D electrons in GaAs/AlxGa1−xAs heterostructures at low densities
Th. Englert; J. C. Maan; Ch. Uihlein; D. C. Tsui; A. C. Gossard
J. Vac. Sci. Technol. B 1, 427–430 (1983) https://doi.org/10.1116/1.582619
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Collective plasmon modes of a semiconductor superlattice
W. L. Bloss
J. Vac. Sci. Technol. B 1, 431–434 (1983) https://doi.org/10.1116/1.582620
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Interference effect in multivalley quantum well structures
Yia‐Chung Chang; D. Z.‐Y. Ting
J. Vac. Sci. Technol. B 1, 435–438 (1983) https://doi.org/10.1116/1.582621
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Tunneling and propagating transport in GaAs–Ga1−xAlxAs–GaAs(100) double heterojunctions
C. Mailhiot; T. C. McGill; J. N. Schulman
J. Vac. Sci. Technol. B 1, 439–444 (1983) https://doi.org/10.1116/1.582622
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Effects of band bending on real space transfer in GaAs–AlxGa1−xAs layered heterostructures
M. A. Littlejohn; W. M. Kwapien; T. H. Glisson; J. R. Hauser; K. Hess
J. Vac. Sci. Technol. B 1, 445–448 (1983) https://doi.org/10.1116/1.582623
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Electron transport in planar‐doped barrier structures using an ensemble Monte Carlo method
M. A. Littlejohn; R. J. Trew; J. R. Hauser; J. M. Golio
J. Vac. Sci. Technol. B 1, 449–454 (1983) https://doi.org/10.1116/1.582624
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Summary Abstract: Compound semiconductor structures for high speed, high frequency devices
Lester F. Eastman
J. Vac. Sci. Technol. B 1, 455 (1983) https://doi.org/10.1116/1.582625
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Summary Abstract: Electrical properties of MBE‐grown GaAs/N–AlGaAs heterostructures and application to high speed devices
S. Hiyamizu; T. Mimura
J. Vac. Sci. Technol. B 1, 456 (1983) https://doi.org/10.1116/1.582626
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Band‐gap engineering via graded gap, superlattice, and periodic doping structures: Applications to novel photodetectors and other devices
Federico Capasso
J. Vac. Sci. Technol. B 1, 457–461 (1983) https://doi.org/10.1116/1.582627
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Growth, characterization, and properties of metastable and modulated semiconductor structures: Prospects for future studies
F. J. Grunthaner; A. Madhukar
J. Vac. Sci. Technol. B 1, 462–467 (1983) https://doi.org/10.1116/1.582628
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Surface processes in plasma‐assisted etching environments
Harold F. Winters; J. W. Coburn; T. J. Chuang
J. Vac. Sci. Technol. B 1, 469–480 (1983) https://doi.org/10.1116/1.582629
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Ultrahigh molecular weight poly(methyl methacrylate) as an electron‐beam resist
L. M. Gavens; B. J. Wu; D. W. Hess; A. T. Bell; D. S. Soong
J. Vac. Sci. Technol. B 1, 481–486 (1983) https://doi.org/10.1116/1.582630
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Planarizing of phosphosilicate glass films on patterned silicon wafers
L. F. Johnson; K. A. Ingersoll; J. V. Dalton
J. Vac. Sci. Technol. B 1, 487–489 (1983) https://doi.org/10.1116/1.582631
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Lift‐off process for achieving fine‐line metallization
A. A. Milgram
J. Vac. Sci. Technol. B 1, 490–493 (1983) https://doi.org/10.1116/1.582632
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Metal on polymer ion implantation mask
D. M. Tennant
J. Vac. Sci. Technol. B 1, 494–496 (1983) https://doi.org/10.1116/1.582633
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A UHV‐compatible round wafer heater for silicon molecular beam epitaxy
S. N. Finegan; R. G. Swartz; J. H. McFee
J. Vac. Sci. Technol. B 1, 497–500 (1983) https://doi.org/10.1116/1.582634
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End‐point detection and etch‐rate measurement during reactive‐ion etching using fluorescent polymer films
Paul Kolodner; A. Katzir; Neal Hartsough
J. Vac. Sci. Technol. B 1, 501–504 (1983) https://doi.org/10.1116/1.582635
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Erratum: Temperature profiles in solid targets irradiated with finely focused beams [J. Vac. Sci. Technol. B 1, 91 (1983)]
Ali A. Iranmanesh; R. F. W. Pease
J. Vac. Sci. Technol. B 1, 505 (1983) https://doi.org/10.1116/1.582591
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