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Issues
January 1983
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
ISSN 0734-211X
EISSN 2327-9877
Phosphorus out diffusion from double‐layered tantalum silicide/polycrystalline silicon structure
J. Vac. Sci. Technol. B 1, 1–5 (1983)
https://doi.org/10.1116/1.582535
Atom‐probe study of the early stage of silicide formation. II. Ni–Si system
Osamu Nishikawa; Eiichi Nomura; Minoru Wada; Yoshitaka Tsunashima; Shiro Horie; Mezame Shibata; Toshihiko Yoshimura; Ryuji Uemori
J. Vac. Sci. Technol. B 1, 10–14 (1983)
https://doi.org/10.1116/1.582533
Reactive ion etching of Ta–silicide/polysilicon double layers for the fabrication of integrated circuits
J. Vac. Sci. Technol. B 1, 15–22 (1983)
https://doi.org/10.1116/1.582534
Plasma potentials in supported discharges and their influence on the purity of sputter‐deposited films
J. Vac. Sci. Technol. B 1, 31–34 (1983)
https://doi.org/10.1116/1.582537
Surface studies of and a mass balance model for Ar+ ion‐assisted Cl2 etching of Si
J. Vac. Sci. Technol. B 1, 37–42 (1983)
https://doi.org/10.1116/1.582539
An XPS study of the influence of ion sputtering on bonding in thermally grown silicon dioxide
J. Vac. Sci. Technol. B 1, 43–47 (1983)
https://doi.org/10.1116/1.582540
Electrodissolution and passivation phenomena in III–V semiconducting compounds
J. Vac. Sci. Technol. B 1, 48–53 (1983)
https://doi.org/10.1116/1.582541
Deposition and composition of silicon oxynitride films
J. Vac. Sci. Technol. B 1, 62–66 (1983)
https://doi.org/10.1116/1.582543
Al2O3 as an antireflection coating for InP/InGaAsP LEDs
J. Vac. Sci. Technol. B 1, 72–73 (1983)
https://doi.org/10.1116/1.582507
Identification and elimination of chlorofluorocarbon pump fluid contamination in a plasma etch system
J. Vac. Sci. Technol. B 1, 74–76 (1983)
https://doi.org/10.1116/1.582508
Thin film fabrication for the Josephson technology cross‐sectional model
J. Vac. Sci. Technol. B 1, 77–90 (1983)
https://doi.org/10.1116/1.582509
Temperature profiles in solid targets irradiated with finely focused beams
J. Vac. Sci. Technol. B 1, 91–99 (1983)
https://doi.org/10.1116/1.582510
Comments on: ‘‘Chemical conversion of composite films on silicon by electron beam irradiation’’
J. Vac. Sci. Technol. B 1, 108–110 (1983)
https://doi.org/10.1116/1.582532
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Heating of photocathode via field emission and radiofrequency pulsed heating: Implication toward breakdown
Ryo Shinohara, Soumendu Bagchi, et al.