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Volume 43, Issue 3

May 2025

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ISSN 2166-2746

EISSN 2166-2754

In this Issue

Editorials
Letters
Review Articles
ARTICLES

Editorials

Thank you to our 2024 reviewers!

Eray S. Aydil

J. Vac. Sci. Technol. B 43, 030401 (2025) https://doi.org/10.1116/6.0004532

Extract

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Letters

Controlled preparation of tungsten diselenide thin films via chemical vapor deposition

Pingfan Ning; Xuerong Li; Feifei Lan; Xiangyu Li; Yingmin Wang; Hongjuan Cheng; Yujian Wang

J. Vac. Sci. Technol. B 43, 030601 (2025) https://doi.org/10.1116/6.0004352

Abstract

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Review Articles

Atomic layer deposition of YSZ electrolytes for solid-state battery development: Beyond lithium

In Special Collection: CHIPS: Future of Semiconductor Processing and Devices

Joel Molina-Reyes; Adriana M. Cuellar-Juarez; Jorge L. Vazquez-Arce; Hugo Tiznado-Vazquez

J. Vac. Sci. Technol. B 43, 030801 (2025) https://doi.org/10.1116/6.0004291

Abstract

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ARTICLES

Electronic and Optoelectronic Materials, Devices and Processing

Gradient-composition upper-waveguide and electron-blocking layers for enhanced performance in near-ultraviolet laser diodes

MaoLin Gao; Jing Yang; Wei Jia; DeGang Zhao; HaiLiang Dong; XiuYang Jia; GuangMei Zhai; BingShe Xu

J. Vac. Sci. Technol. B 43, 032201 (2025) https://doi.org/10.1116/6.0004374

Abstract

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Quantum efficiency characteristics of low-threading-dislocation-density InGaN photocathode grown on GaN substrate

Mikiya Idei; Daiki Sato; Atsushi Koizumi; Tomohiro Nishitani; Yoshio Honda; Hiroshi Amano

J. Vac. Sci. Technol. B 43, 032202 (2025) https://doi.org/10.1116/6.0004199

Abstract

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Realizing GaN-based blue laser diode with 7.5 W output power via electron blocking layer thickness adjustment

Zhenyu Chen; Feng Liang; Degang Zhao; Zongshun Liu; Jing Yang; Ping Chen

J. Vac. Sci. Technol. B 43, 032203 (2025) https://doi.org/10.1116/6.0004426

Abstract

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Effect of quality improvement in active region on temperature characteristics of GaN-based ultraviolet laser diode

Yujie Huang; Jing Yang; Degang Zhao; Zongshun Liu; Feng Liang; Ping Chen

J. Vac. Sci. Technol. B 43, 032204 (2025) https://doi.org/10.1116/6.0004363

Abstract

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Bias stability enhancement of metal/Al₂O₃/AlN/GaN capacitors by high-temperature plasma-enhanced atomic layer deposition of thin AlN interlayer

Atsushi Hiraiwa; Kiyotaka Horikawa; Hiroshi Kawarada

J. Vac. Sci. Technol. B 43, 032205 (2025) https://doi.org/10.1116/6.0004310

Abstract

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Nanoscale Science and Technology

Investigation of tilted etching of Si₃N₄ using CF₄/O₂ plasma: Process development and mechanism study

Zhihong Gao; Leyi Zhang; Yongzhi Fang; Dongyu Cen; Maoxiang Liu; Wenli Wu; Yan Ding

J. Vac. Sci. Technol. B 43, 032801 (2025) https://doi.org/10.1116/6.0004412

Abstract

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MEMS and NEMS

Through-chip porous layer fabrication by plasma etching with protective film deposition

Shimpei Ida; Mizuki Takagishi; Moemi Nakashima; Masanori Hayase

J. Vac. Sci. Technol. B 43, 033001 (2025) https://doi.org/10.1116/6.0004305

Abstract

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Microelectronic and Nanoelectronic Devices

Synergistic regulation of device performance by structural parameters of vertical side-gate type vacuum channel field emission transistor

Wenhua Tang; Kerun Chen; Jie Li; Zhihua Shen; Xiao Wang; Shengli Wu

J. Vac. Sci. Technol. B 43, 033201 (2025) https://doi.org/10.1116/6.0004371

Abstract

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Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

Renato M. Beraldo; Rodrigo R. César; Melissa Mederos; Jacilene M. Medeiros; Andrei Alaferdov; Érick A. Santos; Ednan Joanni; Thebano E. A. Santos; Ricardo C. Teixeira; Marcos V. Puydinger dos Santos; Renato A. Minamisawa; José Alexandre Diniz

J. Vac. Sci. Technol. B 43, 033202 (2025) https://doi.org/10.1116/6.0004313

Abstract

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Influence of etching profile on pattern collapse in complementary metal oxide semiconductor image sensor pixel with deep trench isolation

Clément Sart; Jérôme Dubois; Emilie Prevost; Philippe Garnier; Benjamin Vianne; Frédéric Giovannoni; Caroline Bringolf-Penner; Sébastien Gallois-Garreignot

J. Vac. Sci. Technol. B 43, 033203 (2025) https://doi.org/10.1116/6.0004309

Abstract

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Measurement and Characterization

Novel inspection technology for detecting via open using parallel e-beam scanning and graphic design system

In Special Collection: Papers from the AVS 70th International Symposium

Jaewon Hwang; Chihoon Lee; Kyu Lee; Younghun Kwon; Wonjo Woo; Seho Kim; Keunhyuk Yang; Youngwoon Yoon

J. Vac. Sci. Technol. B 43, 034001 (2025) https://doi.org/10.1116/6.0004425

Abstract

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Vacuum Measurement and Technology

Operational experiences and upgrade of China Spallation Neutron Source Linac vacuum system

Shunming Liu; Yigang Wang; Pengcheng Wang; Hong Song; Yuhui Guan; Jiaming Liu; Biao Tan; Xiaoyang Sun; Bangle Zhu; Ahong Li; Weidong Chen; Huafu Ouyang; Bo Li; Xiaolei Wu; Yongjia Lv

J. Vac. Sci. Technol. B 43, 034201 (2025) https://doi.org/10.1116/6.0004393

Abstract

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Compact vacuum setup for laser induced plasma etching with optical emission spectrum monitoring

In Special Collection: Vacuum Nanoelectronics

Lukáš Šilhan; Jon Ander Arregi; Tomáš Plichta; Ondřej Vaculík; Jan Novotný; Mojmír Šerý

J. Vac. Sci. Technol. B 43, 034202 (2025) https://doi.org/10.1116/6.0004296

Abstract

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Editorials

Thank you to our 2024 reviewers!

Letters

Controlled preparation of tungsten diselenide thin films via chemical vapor deposition

Review Articles

Atomic layer deposition of YSZ electrolytes for solid-state battery development: Beyond lithium

ARTICLES

Electronic and Optoelectronic Materials, Devices and Processing

Gradient-composition upper-waveguide and electron-blocking layers for enhanced performance in near-ultraviolet laser diodes

Quantum efficiency characteristics of low-threading-dislocation-density InGaN photocathode grown on GaN substrate

Realizing GaN-based blue laser diode with 7.5 W output power via electron blocking layer thickness adjustment

Effect of quality improvement in active region on temperature characteristics of GaN-based ultraviolet laser diode

Bias stability enhancement of metal/Al₂O₃/AlN/GaN capacitors by high-temperature plasma-enhanced atomic layer deposition of thin AlN interlayer

Nanoscale Science and Technology

Investigation of tilted etching of Si₃N₄ using CF₄/O₂ plasma: Process development and mechanism study

MEMS and NEMS

Through-chip porous layer fabrication by plasma etching with protective film deposition

Microelectronic and Nanoelectronic Devices

Synergistic regulation of device performance by structural parameters of vertical side-gate type vacuum channel field emission transistor

Ultrathin tantalum films for Schottky contacts on 4H silicon carbide

Influence of etching profile on pattern collapse in complementary metal oxide semiconductor image sensor pixel with deep trench isolation

Measurement and Characterization

Novel inspection technology for detecting via open using parallel e-beam scanning and graphic design system

Vacuum Measurement and Technology

Operational experiences and upgrade of China Spallation Neutron Source Linac vacuum system

Compact vacuum setup for laser induced plasma etching with optical emission spectrum monitoring

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Issues

Editorials

Letters

Review Articles

ARTICLES

Electronic and Optoelectronic Materials, Devices and Processing

Nanoscale Science and Technology

MEMS and NEMS

Microelectronic and Nanoelectronic Devices

Measurement and Characterization

Vacuum Measurement and Technology

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

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