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Issues
May 2025
ISSN 2166-2746
EISSN 2166-2754
Editorials
Letters
Controlled preparation of tungsten diselenide thin films via chemical vapor deposition
J. Vac. Sci. Technol. B 43, 030601 (2025)
https://doi.org/10.1116/6.0004352
Review Articles
Atomic layer deposition of YSZ electrolytes for solid-state battery development: Beyond lithium
In Special Collection:
CHIPS: Future of Semiconductor Processing and Devices
J. Vac. Sci. Technol. B 43, 030801 (2025)
https://doi.org/10.1116/6.0004291
ARTICLES
Electronic and Optoelectronic Materials, Devices and Processing
Gradient-composition upper-waveguide and electron-blocking layers for enhanced performance in near-ultraviolet laser diodes
J. Vac. Sci. Technol. B 43, 032201 (2025)
https://doi.org/10.1116/6.0004374
Quantum efficiency characteristics of low-threading-dislocation-density InGaN photocathode grown on GaN substrate
J. Vac. Sci. Technol. B 43, 032202 (2025)
https://doi.org/10.1116/6.0004199
Realizing GaN-based blue laser diode with 7.5 W output power via electron blocking layer thickness adjustment
J. Vac. Sci. Technol. B 43, 032203 (2025)
https://doi.org/10.1116/6.0004426
Effect of quality improvement in active region on temperature characteristics of GaN-based ultraviolet laser diode
J. Vac. Sci. Technol. B 43, 032204 (2025)
https://doi.org/10.1116/6.0004363
Nanoscale Science and Technology
Investigation of tilted etching of Si3N4 using CF4/O2 plasma: Process development and mechanism study
J. Vac. Sci. Technol. B 43, 032801 (2025)
https://doi.org/10.1116/6.0004412
MEMS and NEMS
Through-chip porous layer fabrication by plasma etching with protective film deposition
J. Vac. Sci. Technol. B 43, 033001 (2025)
https://doi.org/10.1116/6.0004305
Microelectronic and Nanoelectronic Devices
Synergistic regulation of device performance by structural parameters of vertical side-gate type vacuum channel field emission transistor
J. Vac. Sci. Technol. B 43, 033201 (2025)
https://doi.org/10.1116/6.0004371
Ultrathin tantalum films for Schottky contacts on 4H silicon carbide
Renato M. Beraldo; Rodrigo R. César; Melissa Mederos; Jacilene M. Medeiros; Andrei Alaferdov; Érick A. Santos; Ednan Joanni; Thebano E. A. Santos; Ricardo C. Teixeira; Marcos V. Puydinger dos Santos; Renato A. Minamisawa; José Alexandre Diniz
J. Vac. Sci. Technol. B 43, 033202 (2025)
https://doi.org/10.1116/6.0004313
Influence of etching profile on pattern collapse in complementary metal oxide semiconductor image sensor pixel with deep trench isolation
Clément Sart; Jérôme Dubois; Emilie Prevost; Philippe Garnier; Benjamin Vianne; Frédéric Giovannoni; Caroline Bringolf-Penner; Sébastien Gallois-Garreignot
J. Vac. Sci. Technol. B 43, 033203 (2025)
https://doi.org/10.1116/6.0004309
Measurement and Characterization
Novel inspection technology for detecting via open using parallel e-beam scanning and graphic design system
In Special Collection:
Papers from the AVS 70th International Symposium
Jaewon Hwang; Chihoon Lee; Kyu Lee; Younghun Kwon; Wonjo Woo; Seho Kim; Keunhyuk Yang; Youngwoon Yoon
J. Vac. Sci. Technol. B 43, 034001 (2025)
https://doi.org/10.1116/6.0004425
Vacuum Measurement and Technology
Operational experiences and upgrade of China Spallation Neutron Source Linac vacuum system
Shunming Liu; Yigang Wang; Pengcheng Wang; Hong Song; Yuhui Guan; Jiaming Liu; Biao Tan; Xiaoyang Sun; Bangle Zhu; Ahong Li; Weidong Chen; Huafu Ouyang; Bo Li; Xiaolei Wu; Yongjia Lv
J. Vac. Sci. Technol. B 43, 034201 (2025)
https://doi.org/10.1116/6.0004393
Compact vacuum setup for laser induced plasma etching with optical emission spectrum monitoring
In Special Collection:
Vacuum Nanoelectronics
J. Vac. Sci. Technol. B 43, 034202 (2025)
https://doi.org/10.1116/6.0004296
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Transferable GeSn ribbon photodetectors for high-speed short-wave infrared photonic applications
Haochen Zhao, Suho Park, et al.
Exploring SiC CVD growth parameters compatible with remote epitaxy
Daniel J. Pennachio, Jenifer R. Hajzus, et al.