Low‐stress (<50 MPa) gold films 0.7‐ and 2‐μm thick were deposited by electroplating from a cyanide solution at 40 °C at a current density of 2.5 mA/cm2. Thin gold films under higher stress were electron‐beam evaporated at room temperature or sputtered at a power of 150 W under 2‐Pa argon gas. The stress dependence of these films on the post‐deposition annealing temperature up to 200 °C was investigated, using an interferometric method at room temperature. The stress evolution is discussed in relationship to the thermally induced changes in the structure and the microstructure of the various films investigated by transmission electron microscopy.

This content is only available via PDF.
You do not currently have access to this content.