A negative photoresist consisting of 4,4′‐diazido‐3,3′‐dimethoxybiphenyl and a novolak resin, called micro resist for i‐line (MRI), has been prepared and evaluated for i‐line phase‐shifting lithography. MRI has a high transmittance (80%/μm) and a high resist contrast (γ) at i line (365 nm). Line‐and‐space patterns of 0.30 μm were achieved using MRI in conjunction with an i‐line phase‐shifting lithography. The insolubilization mechanism of MRI is attributed to a secondary amine formed by the reaction of nitrene with novolak resin.
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© 1991 American Vacuum Society.
1991
American Vacuum Society
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