MBE grown resonant tunneling diodes based on the lattice matched AlAs/GaAs and the pseudomorphic AlGaAs/InGaAs systems are investigated. In the presence of quantizing magnetic field, a large number of tunneling peaks in the valley region of the current–voltage curves are observed. The dependence of the peak positions on magnetic field is used to distinguish direct tunneling between Landau levels from that due to phonon assisted tunneling. Shubnikov de‐Haas measurements show the evidence of a two‐dimensional quasibound state in the accumulation layer of the emitter and LO phonon assisted tunneling through the Landau levels in the well.

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