Photoassisted molecular‐beam epitaxy (MBE) has been employed to successfully prepare p‐type and n‐type modulation HgCdTe. In this paper, we report details of the MBE growth experiments and describe the structural, optical, and electrical properties that these new quantum well structures and superlattices of HgCdTe possess.

Topics
Doping, Superlattices, Electrical properties and parameters, Quantum wells, Epitaxy
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© 1990 American Vacuum Society.
1990
American Vacuum Society
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