Focused ion beam induced deposition of low‐resistivity gold films Available to Purchase

Focused ion beam induced deposition of metals has up to now produced films with resistivities 30–5000 times higher than bulk values for metals because of high concentrations of impurities from the precursor gas incorporated into the films. We have demonstrated for the first time deposition of submicron Au films with resistivities approaching that of the bulk metal and carbon contents of <10 at. %. These results are particularly relevant to applications in integrated circuit restructuring and x‐ray lithography mask repair, where high film conductivity and purity improves interconnect quality and x‐ray opacity.