Molecular‐beam epitaxy of InSb/CdTe heterostructures Available to Purchase

We report the growth by molecular‐beam epitaxy of CdTe/InSb double heterostructures and multiple quantum wells on InSb and CdTe substrates. For the double heterostructures, InSb and CdTe layers were grown in separate chambers connected via an ultrahigh vacuum transfer module. Here, antimony originated from a compound InSb source oven. For multiple quantum wells, InSb and CdTe layers were grown in a single InSb/CdTe epitaxy chamber, where antimony was derived from an antimony cracking furnace. Infrared photoluminescence from InSb double heterostructures has shown the existence of recombination features which are similar to that of the bulk. Multiple quantum well structures have been examined by transmission electron microscopy. Raman spectroscopy has also been used to examine the interfacial and in‐layer nature of InSb/CdTe heterostructures.