We report the successful use of photoassisted molecular‐beam epitaxy for the preparation of p‐type CdTe epilayers and p‐type modulation‐doped HgCdTe multilayers in which arsenic is used as the substitutional dopant. The CdTe:As epilayers were grown at substrate temperatures which ranged from 230 to 180 °C. The resulting CdTe:As layers exhibited room‐temperature hole concentrations ranging from 7×1015 to 6.2×1018 cm−3, as determined by van der Pauw Hall effect measurements. This highest doping level is nearly two orders of magnitude greater than that obtained for bulk p‐type CdTe. The mobility of the CdTe:As epilayers ranged from 27 to 74 cm2/V s, at room temperature. The arsenic acceptor ionization energy in CdTe:As was found to be ∼58–60 meV using low‐temperature photoluminescence measurements. The modulation‐doped HgCdTe samples exhibited hole concentrations ranging from 5×1016 to 1×1018 cm−3 and hole mobilities of ∼200–325 cm2/V s at temperatures <200 K.
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March 1989
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Research Article|
March 01 1989
Properties of II–VI semiconductor films grown by photoassisted molecular‐beam epitaxy Available to Purchase
R. L. Harper, Jr.
Jeong W. Han
S. Hwang
Y. Lansari
N. C. Giles
J. W. Cook, Jr.
J. F. Schetzina
J. Vac. Sci. Technol. B 7, 244–248 (1989)
Article history
Received:
September 22 1988
Accepted:
September 22 1988
Citation
R. L. Harper, Jeong W. Han, S. Hwang, Y. Lansari, N. C. Giles, J. W. Cook, J. F. Schetzina; Properties of II–VI semiconductor films grown by photoassisted molecular‐beam epitaxy. J. Vac. Sci. Technol. B 1 March 1989; 7 (2): 244–248. https://doi.org/10.1116/1.584726
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