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March 1989
This content was originally published in
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
Erratum|
March 01 1989
Erratum: Dry etching induced damage on vertical sidewalls of GaAs channels [J. Vac. Sci. Technol. B 6, 1916 (1988)] Available to Purchase
J. Vac. Sci. Technol. B 7, 236 (1989)
Article history
Received:
January 10 1989
Accepted:
January 10 1989
Citation
S. W. PangW. D. GoodhueT. M. LyszczarzD. J. EhrlichR. B. GoodmanG. D. Johnson; Erratum: Dry etching induced damage on vertical sidewalls of GaAs channels [J. Vac. Sci. Technol. B 6, 1916 (1988)]. J. Vac. Sci. Technol. B 1 March 1989; 7 (2): 236. https://doi.org/10.1116/1.584724
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