Growth and properties of doped CdTe films grown by photoassisted molecular‐beam epitaxy Available to Purchase

Photoassisted molecular‐beam epitaxy (PAMBE), in which the substrate is illuminated during film growth has been successfully employed to prepare n‐type CdTe:In and p‐type CdTe:Sb films. The n‐type layers exhibit large electron mobilities at low temperatures. Field effect transistors have been fabricated from selected CdTe:In layers grown by PAMBE which show good device characteristics. The p‐type CdTe:Sb films exhibit bright photoluminescence of excitonic origin at low temperatures. At 300 K, hole mobilities of 81 cm²/V s and carrier concentrations in excess of 10¹⁸ cm⁻³ have been achieved by the PAMBE technique.