Enhanced plasma etch resistance of acrylic acid–calcium acetate modified poly(methylmethacrylate) Available to Purchase

Enhanced dry etch resistance of acrylic acid–calcium acetate modified poly(methylmeth‐ acrylate) was demonstrated. Selective pattern formation in the irradiated (DUV and e‐beam) areas was accomplished using PMMA as a base film and acrylic acid as a modifying monomer. After the acrylic acid modified PMMA has imbibed calcium ion, a latent image was developed by exposure to an oxygen plasma. An involatile calcium oxide layer which had resistance against CHF₃ reactive ion etching was generated. The images of modified PMMA were transferred into the silicon dioxide layer.