Superconductive electronics from Josephson junctions are governed by quantum mechanical tunneling through sub-10 nm scale insulating tunnel barriers. The electrical properties are exponentially sensitive to this dimension, which necessitates fabrication with nanoscale precision and uniformity. For circuits in high-transition temperature YBa Cu O (YBCO) thin films, direct writing of the material with a focused helium ion beam has shown promise in the creation of uniform nanoscale insulators for YBCO Josephson junctions and other circuit regions. In this paper, we report on the procedures and variables associated with this process and discuss the potential for scaling up the number of junctions for quantum sensing and complex energy efficient digital circuits.
Skip Nav Destination
Article navigation
December 2024
Research Article|
October 31 2024
Nanofabrication of high transition temperature superconductive electronics with focused helium ion irradiation
Jay C. LeFebvre
;
Jay C. LeFebvre
(Conceptualization, Formal analysis, Investigation, Methodology, Supervision, Writing – original draft, Writing – review & editing)
Department of Electrical and Computer Engineering, University of California Riverside
, Riverside, California 92521
Search for other works by this author on:
Adhilsha Parachikunnumal
;
Adhilsha Parachikunnumal
(Investigation, Methodology)
Department of Electrical and Computer Engineering, University of California Riverside
, Riverside, California 92521
Search for other works by this author on:
Shane A. Cybart
Shane A. Cybart
(Conceptualization, Funding acquisition, Supervision, Writing – review & editing)
Department of Electrical and Computer Engineering, University of California Riverside
, Riverside, California 92521
Search for other works by this author on:
J. Vac. Sci. Technol. B 42, 063204 (2024)
Article history
Received:
August 28 2024
Accepted:
October 15 2024
Citation
Jay C. LeFebvre, Adhilsha Parachikunnumal, Shane A. Cybart; Nanofabrication of high transition temperature superconductive electronics with focused helium ion irradiation. J. Vac. Sci. Technol. B 1 December 2024; 42 (6): 063204. https://doi.org/10.1116/6.0004020
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
109
Views
Citing articles via
Future of plasma etching for microelectronics: Challenges and opportunities
Gottlieb S. Oehrlein, Stephan M. Brandstadter, et al.
Novel low-temperature and high-flux hydrogen plasma source for extreme-ultraviolet lithography applications
A. S. Stodolna, T. W. Mechielsen, et al.
Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning
Yasser Pordeli, Céline Steenge, et al.
Related Content
Study of damage generation induced by focused helium ion beam in silicon
J. Vac. Sci. Technol. B (May 2019)
High-temperature superconductor quantum flux parametron for energy efficient logic
Appl. Phys. Lett. (May 2024)
Arrays of nano-high-transition temperature superconductor quantum interference devices
Appl. Phys. Lett. (May 2024)
Single electron electronics: Challenge for nanofabrication
J. Vac. Sci. Technol. B (November 1997)
Sub-10 nm nanofabrication with the helium and neon ions in ORION NanoFab
AIP Conference Proceedings (April 2013)