Coherent manipulation of electron spins is one of the central challenges of silicon-based quantum computing efforts. Electron spin resonance (ESR) lines, or Oersted lines, allow 10–60 GHz radio frequency (RF) pulses to induce an electromagnetic field that drives Rabi oscillations in a quantum dot interface. The frequency of these Rabi oscillations is directly proportional to the strength of the induced electromagnetic field. We outline a methodology for the design of a printed circuit board and an ESR line that is able to transmit an RF pulse in the 40 GHz regime and induce an oscillating magnetic field onto a qubit device. We propose and implement a novel design by coupling a second symmetrical Oersted line in the opposing direction of the first to act as an antenna for the purpose of monitoring power and magnetic field strength at the embedded device interface.
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December 2024
Research Article|
October 25 2024
Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices
Mark-Yves Gaunin
;
Mark-Yves Gaunin
a)
(Data curation, Formal analysis, Investigation, Software, Writing – original draft, Writing – review & editing)
1
National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, Nanoscale Device Characterization Division
, 100 Bureau Dr, Gaithersburg, Maryland 208992
Joint Quantum Institute (JQI)
, University of Maryland, Atlantic Building, 4254 Stadium Dr, College Park, Maryland 207423
Department of Electrical and Computer Engineering, A. James Clark School of Engineering, University of Maryland,
8223 Paint Branch Dr, College Park, Maryland 20742a)Authors to whom correspondence should be addressed: mark-yves.gaunin@nist.gov and pradeep.namboodiri@nist.gov
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Pradeep Namboodiri
;
Pradeep Namboodiri
a)
(Conceptualization, Data curation, Formal analysis, Investigation, Methodology, Supervision, Writing – review & editing)
1
National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, Nanoscale Device Characterization Division
, 100 Bureau Dr, Gaithersburg, Maryland 20899a)Authors to whom correspondence should be addressed: mark-yves.gaunin@nist.gov and pradeep.namboodiri@nist.gov
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Alessandro Restelli
;
Alessandro Restelli
(Conceptualization, Formal analysis, Methodology)
1
National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, Nanoscale Device Characterization Division
, 100 Bureau Dr, Gaithersburg, Maryland 208992
Joint Quantum Institute (JQI)
, University of Maryland, Atlantic Building, 4254 Stadium Dr, College Park, Maryland 207424
College of Computer, Mathematical, and Natural Sciences, Department of Physics
, University of Maryland,4150 Campus Dr, College Park, Maryland 20742
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Ranjit Kashid
;
Ranjit Kashid
(Conceptualization, Investigation)
5
National Centre on Quantum Materials Technology, Centre for Materials for Electronics Technology (C-MET)
, Pashan Road, Panchawati, Pune, Maharashtra 411008, India
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Xiqiao Wang
;
Xiqiao Wang
(Conceptualization, Investigation)
6
Rigetti Computing
, 47430 Seabridge Dr, Fremont, California 94538
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Fan Fei
;
Fan Fei
(Formal analysis, Investigation)
1
National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, Nanoscale Device Characterization Division
, 100 Bureau Dr, Gaithersburg, Maryland 208992
Joint Quantum Institute (JQI)
, University of Maryland, Atlantic Building, 4254 Stadium Dr, College Park, Maryland 207424
College of Computer, Mathematical, and Natural Sciences, Department of Physics
, University of Maryland,4150 Campus Dr, College Park, Maryland 20742
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Brian Courts
;
Brian Courts
(Formal analysis, Investigation)
1
National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, Nanoscale Device Characterization Division
, 100 Bureau Dr, Gaithersburg, Maryland 208992
Joint Quantum Institute (JQI)
, University of Maryland, Atlantic Building, 4254 Stadium Dr, College Park, Maryland 207424
College of Computer, Mathematical, and Natural Sciences, Department of Physics
, University of Maryland,4150 Campus Dr, College Park, Maryland 20742
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Utsav
;
Utsav
(Data curation, Methodology)
1
National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, Nanoscale Device Characterization Division
, 100 Bureau Dr, Gaithersburg, Maryland 20899
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Vijith Kamalon Pulikodan
;
Vijith Kamalon Pulikodan
(Investigation)
1
National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, Nanoscale Device Characterization Division
, 100 Bureau Dr, Gaithersburg, Maryland 20899
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Jonathan Wyrick
;
Jonathan Wyrick
(Methodology)
1
National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, Nanoscale Device Characterization Division
, 100 Bureau Dr, Gaithersburg, Maryland 20899
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Richard Silver
Richard Silver
(Formal analysis, Funding acquisition, Supervision)
1
National Institute of Standards and Technology (NIST), Physical Measurement Laboratory, Nanoscale Device Characterization Division
, 100 Bureau Dr, Gaithersburg, Maryland 20899
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a)Authors to whom correspondence should be addressed: mark-yves.gaunin@nist.gov and pradeep.namboodiri@nist.gov
J. Vac. Sci. Technol. B 42, 062802 (2024)
Article history
Received:
September 06 2024
Accepted:
October 03 2024
Citation
Mark-Yves Gaunin, Pradeep Namboodiri, Alessandro Restelli, Ranjit Kashid, Xiqiao Wang, Fan Fei, Brian Courts, Utsav, Vijith Kamalon Pulikodan, Jonathan Wyrick, Richard Silver; Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices. J. Vac. Sci. Technol. B 1 December 2024; 42 (6): 062802. https://doi.org/10.1116/6.0004051
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