The need for reliable quantum light sources drives our research to study color centers (CCs) in silicon as telecommunication O-band emitters. Building from photoluminescence measurements, we compare new electroluminescence measurements. To this end, we synthesized CC-embedded p-i-n junctions in silicon, creating CC light-emitting diode devices. The two types of CCs synthesized were G-centers and W-centers, which show zero-phonon lines at approximately 1279 nm and 1218 nm, respectively. Here, we present our device design, fabrication process flow, and report on the device performance results from measurements to date.
REFERENCES
1.
A.
Durand
et al, Phys. Rev. Lett.
126
, 083602
(2021
). 2.
S. M.
Buckley
et al, Opt. Express
28
, 16057
(2020
). 3.
W.
Redjem
et al, Nat. Commun.
14
, 3321
(2023
). 4.
G.
Davies
, Phys. Rep.
176
, 83
(1989
). 5.
J. M.
Shainline
and J.
Xu
, Laser Photonics Rev.
1
, 334
(2007
). 6.
C.
Chartrand
, L.
Bergeron
, K. J.
Morse
, H.
Riemann
, N. V.
Abrosimov
, P.
Becker
, H.-J.
Pohl
, S.
Simmons
, and M. L. W.
Thewalt
, Phys. Rev. B
98
, 195201
(2018
). 7.
L. W.
Song
, X. D.
Zhan
, B. W.
Benson
, and G. D.
Watkins
, Phys. Rev. B
42
, 5765
(1990
). 8.
A.
Durand
et al, arXiv:2404.15069 (2024).9.
D. D.
Berhanuddin
, M. A.
Lourenço
, R. M.
Gwilliam
, and K. P.
Homewood
, Adv. Funct. Mater.
22
, 2709
(2012
). 10.
S.
Buckley
, J.
Chiles
, A. N.
McCaughan
, G.
Moody
, K. L.
Silverman
, M. J.
Stevens
, R. P.
Mirin
, S. W.
Nam
, and J. M.
Shainline
, Appl. Phys. Lett.
111
, 141101
(2017
). 11.
Y.
Zhiyenbayev
et al, Opt. Express
31
, 8352
(2023
). 2024 Published under an exclusive license by the AVS.
2024
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