Ion implantation is widely used in the complementary metal–oxide–semiconductor process, which stimulates to study its role for doping control in rapidly emerging group IV Ge1−xSnx materials. We tested the impact of As and B implantation and of subsequent rapid thermal annealing (RTA) on the damage formation and healing of the Ge1−xSnx lattice. Ion implantation was done at 30, 40, and 150 keV and with various doses. The implantation profiles were confirmed using secondary ion mass spectrometry. X-ray diffraction in combination with Raman and photoluminescence spectroscopies indicated notable crystal damage with the increase of the implantation dose and energy. Significant damage recovery was confirmed after RTA treatment at 300 °C and to a larger extent at 400 °C for a Ge1−xSnx sample with Sn content less than 11%. A GeSn NP diode was fabricated after ion implantation. The device showed rectifying current-voltage characteristics with maximum responsivity and detectivity of 1.29 × 10−3 A/W and 3.0 × 106 cm (Hz)1/2/W at 77 K, respectively.

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See the supplementary material online for elemental composition analysis.

Supplementary Material

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