The epitaxial development and characterization of metamorphic “GaSb-on-silicon” buffers as substrates for antimonide devices is presented. The approach involves the growth of a spontaneously and fully relaxed GaSb metamorphic buffer in a primary epitaxial reactor, and use of the resulting “GaSb-on-silicon” wafer to grow subsequent layers in a secondary epitaxial reactor. The buffer growth involves four steps—silicon substrate preparation for oxide removal, nucleation of AlSb on silicon, growth of the GaSb buffer, and finally capping of the buffer to prevent oxidation. This approach on miscut silicon substrates leads to a buffer with negligible antiphase domain density. The growth of this buffer is based on inducing interfacial misfit dislocations between an AlSb nucleation layer and the underlying silicon substrate, which results in a fully relaxed GaSb buffer. A 1 μm thick GaSb layer buffer grown on silicon has ∼9.2 × 107dislocations/cm2. The complete lack of strain in the epitaxial structure allows subsequent growths to be accurately lattice matched, thus making the approach ideal for use as a substrate. We characterize the GaSb-on-silicon wafer using high-resolution x-ray diffraction and transmission electron microscopy. The concept’s feasibility is demonstrated by growing interband cascade light emitting devices on the GaSb-on-silicon wafer. The performance of the resulting LEDs on silicon approaches that of counterparts grown lattice matched on GaSb.
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January 2024
Research Article|
January 24 2024
Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth
Special Collection:
Mid-Infrared Optoelectronic Materials and Devices
Fatih F. Ince
;
Fatih F. Ince
(Formal analysis, Resources, Validation, Writing – review & editing)
1
Center for High Technology Materials, The University of New Mexico
, Albuquerque, New Mexico 87106
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Mega Frost
;
Mega Frost
(Data curation, Validation, Visualization, Writing – review & editing)
1
Center for High Technology Materials, The University of New Mexico
, Albuquerque, New Mexico 87106
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Darryl Shima
;
Darryl Shima
(Formal analysis, Investigation, Methodology, Software, Visualization, Writing – review & editing)
1
Center for High Technology Materials, The University of New Mexico
, Albuquerque, New Mexico 87106
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Thomas J. Rotter
;
Thomas J. Rotter
(Conceptualization, Data curation, Formal analysis, Methodology, Resources, Supervision, Writing – review & editing)
1
Center for High Technology Materials, The University of New Mexico
, Albuquerque, New Mexico 87106
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Sadhvikas Addamane
;
Sadhvikas Addamane
(Data curation, Formal analysis, Investigation, Resources, Writing – review & editing)
2
Center for Integrated Nanotechnologies, Sandia National Laboratories
, Albuquerque, New Mexico 87185
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Chadwick L. Canedy;
Chadwick L. Canedy
(Conceptualization, Data curation, Methodology, Visualization, Writing – review & editing)
3
U.S. Naval Research Laboratory
, Washington, DC 20375
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Stephanie Tomasulo
;
Stephanie Tomasulo
(Conceptualization, Formal analysis, Investigation, Methodology, Supervision, Writing – review & editing)
3
U.S. Naval Research Laboratory
, Washington, DC 20375
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Chul Soo Kim;
Chul Soo Kim
(Data curation, Formal analysis, Resources, Validation, Writing – review & editing)
3
U.S. Naval Research Laboratory
, Washington, DC 20375
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William W. Bewley;
William W. Bewley
(Conceptualization, Formal analysis, Methodology, Validation, Visualization, Writing – review & editing)
3
U.S. Naval Research Laboratory
, Washington, DC 20375
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Igor Vurgaftman
;
Igor Vurgaftman
(Conceptualization, Formal analysis, Resources, Supervision, Validation, Writing – review & editing)
3
U.S. Naval Research Laboratory
, Washington, DC 20375
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Jerry R. Meyer
;
Jerry R. Meyer
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Resources, Software, Supervision, Validation, Visualization, Writing – original draft, Writing – review & editing)
3
U.S. Naval Research Laboratory
, Washington, DC 20375
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Ganesh Balakrishnan
Ganesh Balakrishnan
a)
(Conceptualization, Data curation, Formal analysis, Funding acquisition, Investigation, Methodology, Project administration, Resources, Software, Supervision, Validation, Visualization, Writing – original draft, Writing – review & editing)
1
Center for High Technology Materials, The University of New Mexico
, Albuquerque, New Mexico 871064
Department of Electrical and Computer Engineering, The University of New Mexico
, Albuquerque, New Mexico 87106
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Fatih F. Ince
1
Mega Frost
1
Darryl Shima
1
Thomas J. Rotter
1
Sadhvikas Addamane
2
Chadwick L. Canedy
3
Stephanie Tomasulo
3
Chul Soo Kim
3
William W. Bewley
3
Igor Vurgaftman
3
Jerry R. Meyer
3
Ganesh Balakrishnan
1,4,a)
1
Center for High Technology Materials, The University of New Mexico
, Albuquerque, New Mexico 87106
2
Center for Integrated Nanotechnologies, Sandia National Laboratories
, Albuquerque, New Mexico 87185
3
U.S. Naval Research Laboratory
, Washington, DC 20375
4
Department of Electrical and Computer Engineering, The University of New Mexico
, Albuquerque, New Mexico 87106a)
Electronic mail: [email protected]
J. Vac. Sci. Technol. B 42, 012205 (2024)
Article history
Received:
October 10 2023
Accepted:
December 22 2023
Citation
Fatih F. Ince, Mega Frost, Darryl Shima, Thomas J. Rotter, Sadhvikas Addamane, Chadwick L. Canedy, Stephanie Tomasulo, Chul Soo Kim, William W. Bewley, Igor Vurgaftman, Jerry R. Meyer, Ganesh Balakrishnan; Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth. J. Vac. Sci. Technol. B 1 January 2024; 42 (1): 012205. https://doi.org/10.1116/6.0003211
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